KR102593117B1 - Polishing pad and preparing method of semiconductor device using the same - Google Patents

Abstract

A polishing pad with structural features that can maximize the effect of preventing water leakage. Specifically, it includes a first surface that is the polishing surface and a second surface that is the rear surface, and a first surface that penetrates from the first surface to the second surface. a polishing layer including through holes; a window disposed within the first through hole; and disposed on the second surface side of the polishing layer, comprising a third surface on the polishing layer side and a fourth surface that is the rear surface, and penetrating from the third surface to the fourth surface and forming the first through hole. a support layer including a second through hole connected to the second through hole, wherein the second through hole is smaller than the first through hole, the lowermost end of the window is supported by the third surface, and the lowermost end of the window and the second through hole are smaller than the first through hole. comprising a first adhesive layer between the three sides, between the second side and the third side; and a second adhesive layer between the lowermost end surface of the window and the third surface, wherein the support layer includes a compression portion in a region corresponding to the lowermost end surface of the window, and a method of manufacturing a semiconductor device using the polishing pad.

Description

Polishing pad and manufacturing method of semiconductor device using the same {POLISHING PAD AND PREPARING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME}

It relates to a polishing pad applied to the chemical and mechanical planarization process of a semiconductor substrate as part of the semiconductor device manufacturing process and a method of manufacturing a semiconductor device using the polishing pad.

Chemical mechanical planarization (CMP) or chemical mechanical polishing (CMP) processes are used in various fields and for various purposes. The CMP process is performed on a predetermined polishing surface of the polishing object, and can be performed for the purposes of flattening the polishing surface, removing aggregated materials, resolving crystal lattice damage, and removing scratches and contaminants.

CMP process technology for semiconductor processes can be classified according to the film material to be polished or the surface shape after polishing. For example, depending on the film material to be polished, it can be divided into single silicon or poly silicon, and various oxide films or tungsten (W), copper (Cu), and aluminum (Al) depending on the type of impurities. ), ruthenium (Ru), and tantalum (Ta) can be classified into metal film CMP processes. Depending on the surface shape after polishing, it can be classified into a process to alleviate the roughness of the substrate surface, a process to flatten steps caused by multi-layer circuit wiring, and an element separation process to selectively form circuit wiring after polishing.

The CMP process can be applied as multiple processes in the manufacturing process of semiconductor devices. In the case of a semiconductor device, it includes a plurality of layers, and each layer includes a complex and fine circuit pattern. In addition, recent semiconductor devices are evolving in a direction where individual chip sizes are decreasing and the patterns of each layer are becoming more complex and fine. Accordingly, the purpose of the CMP process has expanded to include not only the purpose of flattening circuit wiring in the process of manufacturing semiconductor devices, but also the application of separating circuit wiring and improving the wiring surface, and as a result, more sophisticated and reliable CMP performance is required. .

The polishing pad used in this CMP process is a process component that processes the polished surface to the required level through friction, and is one of the most important factors in the thickness uniformity of the polished object after polishing, flatness of the polished surface, and polishing quality. can see.

One embodiment is a polishing pad applying a window for end point detection, which minimizes leakage, which is a path for moisture permeation through the interface between the window and the polishing pad, and substantially prevents water leakage even when applied to a long-term polishing process. We aim to provide a polishing pad that delivers excellent long-term durability.

Another embodiment is a method of manufacturing a semiconductor device using the polishing pad, wherein a specific structure using a window of the polishing pad is combined with optimal process conditions related to the polishing process to further improve process efficiency, polishing rate, and polishing flatness. The goal is to provide a method for manufacturing semiconductor devices with excellent quality in terms of reliability and defect prevention.

In one embodiment, a polishing layer including a first surface that is a polishing surface and a second surface that is the rear surface, and a first through hole penetrating from the first surface to the second surface; a window disposed within the first through hole; and disposed on the second surface side of the polishing layer, comprising a third surface on the polishing layer side and a fourth surface that is the rear surface, and penetrating from the third surface to the fourth surface and forming the first through hole. a support layer including a second through hole connected to the second through hole, wherein the second through hole is smaller than the first through hole, the lowermost end of the window is supported by the third surface, and the lowermost end of the window and the second through hole are smaller than the first through hole. comprising a first adhesive layer between the three sides, between the second side and the third side; and a second adhesive layer between the lowermost end surface of the window and the third surface, wherein the support layer includes a compression portion in a region corresponding to the lowermost end surface of the window.

The first adhesive layer may include a moisture-curable resin, and the second adhesive layer may include a thermoplastic resin.

The first adhesive layer may not be disposed between the side of the first through hole and the side of the window.

The first adhesive layer may also be disposed between a side of the first through hole and a side of the window.

The support layer may include a non-compressed portion in a region excluding the compressed portion, and a percentage of the thickness of the compressed portion compared to the thickness of the non-compressed portion may be 0.01% to 30%.

The first surface includes at least one groove, and the groove may have a depth of 100 ㎛ to 1500 ㎛ and a width of 0.1 mm to 20 mm.

The first surface may include a plurality of grooves, the plurality of grooves may include concentric circular grooves, and the spacing between two adjacent grooves of the concentric circular grooves may be 2 mm to 70 mm.

The bottom section of the window may further include a recess.

The depth of the recess may be 0.1 mm to 2.5 mm.

The window may include a non-foaming cured product of a window composition containing a first urethane-based prepolymer, and the polishing layer may include a foamed cured product of a polishing layer composition containing a second urethane-based prepolymer.

The Shore D hardness measured on the first surface in a dry state at room temperature may be smaller than the Shore D hardness measured on the uppermost surface of the window in a dry state at room temperature.

In another embodiment, it includes a first surface that is a polishing surface and a second surface that is the rear surface of the polishing surface, and includes a first through hole penetrating from the first surface to the second surface, and disposed in the first through hole. Providing a polishing pad provided with a polishing layer including a window; and placing the polishing target on the first surface so that the surface to be polished is in contact with the polishing target and then polishing the polishing target while rotating the polishing pad and the polishing target relative to each other under pressure conditions, wherein the polishing target is It includes a semiconductor substrate, wherein the polishing pad further includes a support layer disposed on the second side of the polishing layer, and the support layer includes a third side on the polishing layer side and a fourth side behind the polishing layer, It includes a second through hole passing from the third surface to the fourth surface and connected to the first through hole, wherein the second through hole is smaller than the first through hole, and the lowest end surface of the window is the third through hole. supported by a surface, comprising a first adhesive layer between the lowermost end surface of the window and the third surface, and between the second surface and the third surface; and a second adhesive layer between the lowermost end surface of the window and the third surface, wherein the support layer includes a compressed portion in a region corresponding to the lowermost end surface of the window.

The method of manufacturing the semiconductor device further includes the step of supplying a polishing slurry onto the first surface, wherein the polishing slurry is sprayed onto the first surface through a supply nozzle, and the polishing slurry sprayed through the supply nozzle. The flow rate of the slurry may be 10 ml/min to 1,000 ml/min.

The rotation speed of the polishing object and the polishing pad may each be 10 rpm to 500 rpm.

The polishing pad minimizes leakage of liquid components flowing through the interface between the window and the polishing pad through a combination of a multi-stage adhesive layer structure and a compressed portion structure, and substantially prevents leakage even when applied to a long-term polishing process. Excellent long-term durability can be achieved.

The manufacturing method of the semiconductor device further improves process efficiency by combining a specific structure using the window of the polishing pad with optimal process conditions related to the polishing process, and is excellent in terms of polishing rate, polishing flatness, and defect prevention. Quality can be secured.

1 is a plan view of a polishing pad according to one implementation.
FIG. 2 schematically shows a cross-sectional view taken along line XX' in the polishing pad according to the embodiment of FIG. 1.
Figure 3 schematically shows a cross-sectional view of a polishing pad according to another embodiment.
Figure 4 is an enlarged schematic diagram of part B of Figure 2.
Figure 5 is an enlarged schematic diagram of portion A of Figure 2.
Figure 6 schematically shows a cross section of a polishing pad according to another embodiment.
Figure 7 schematically shows the air leak measurement process of the polishing pad.
Figure 8 is a schematic diagram schematically showing a method of manufacturing the semiconductor device according to an embodiment.
Figures 9 (a) to (d) schematically show cross-sectional views of the polishing pads of Comparative Examples 1 to 4, respectively.

The advantages and features of the present invention and methods for achieving them will become clear with reference to the embodiments described below. However, the present invention is not limited to the embodiments disclosed below and will be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the present invention of the scope of the invention, and that the present invention is defined by the scope of the claims. It just becomes.

In the drawing, the thickness is enlarged to clearly express various layers and areas. And in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggerated. Like reference numerals refer to like elements throughout the specification.

Additionally, in this specification, when a part of a layer, membrane, region, plate, etc. is said to be “on,” “on,” or “on” another part, this refers not only to being “directly on” the other part, but also to or in between. Also includes cases where there are other parts. Conversely, when a part is said to be “right on top” of another part, it means that there is no other part in between. In addition, when a part of a layer, membrane, region, plate, etc. is said to be “under” or “beneath” another part, this refers not only to being “immediately below” another part, but also to cases where there is another part in between. Includes. Conversely, when a part is said to be "right below" another part, it means that there is no other part in between.

In this specification, modifiers such as “first” or “second” are used to distinguish cases where the higher-level configurations are different, and these modifiers alone do not mean that the mutual configurations are specifically different types.

Hereinafter, embodiments according to the present invention will be described in detail.

In one embodiment of the present invention, a polishing layer including a first surface that is a polishing surface and a second surface that is the rear surface, and a first through hole penetrating from the first surface to the second surface; a window disposed within the first through hole; and disposed on the second surface side of the polishing layer, comprising a third surface on the polishing layer side and a fourth surface that is the rear surface, and penetrating from the third surface to the fourth surface and forming the first through hole. a support layer including a second through hole connected to the second through hole, wherein the second through hole is smaller than the first through hole, the lowermost end of the window is supported by the third surface, and the lowermost end of the window and the second through hole are smaller than the first through hole. comprising a first adhesive layer between the three sides, between the second side and the third side; and a second adhesive layer between the lowermost end surface of the window and the third surface, wherein the support layer includes a compression portion in a region corresponding to the lowermost end surface of the window.

The polishing pad is one of the raw materials essential for the polishing process that requires surface flattening, and is one of the important process components in the manufacturing process of semiconductor devices. The purpose of the polishing pad is to improve the convenience of subsequent processing, such as by flattening uneven structures and removing surface defects. The polishing process is a process that is applied to other technological fields in addition to the semiconductor technology field, but compared to other technological fields, the precision of the polishing process required in the semiconductor manufacturing process can be said to be at the highest level. Considering the recent trend toward high integration and ultra-miniaturization of semiconductor devices, the overall quality of semiconductor devices can be greatly reduced even by the slightest error in the polishing process during the manufacturing process. Therefore, for fine control of the polishing process, a polishing end point detection technology has been introduced to stop polishing when the semiconductor substrate has been polished to a desired level.

FIG. 1 schematically shows a top view of a polishing pad 100 according to one implementation. Referring to FIG. 1, the polishing pad 100 may include a window 102. Specifically, the polishing pad 100 is opaque as a whole, but a window 102 that is locally transparent is introduced, so that the end point of polishing can be determined by detecting changes in film quality by optical signals such as a laser. there is. The window 102 for end point detection is a component made of materials and properties that are different from the basic materials and properties constituting the polishing layer of the polishing pad 100, and as it is introduced, a local heterogeneity is felt on the polishing surface of the polishing layer. is created. Because the polishing of a semiconductor substrate utilizes the entire polishing surface of the polishing pad, including the uppermost surface of the window, minimizing the negative influence of local heterogeneity in the area where the window is introduced on the polishing of the semiconductor substrate determines the quality of the semiconductor device. It can be said to be an important element.

From this perspective, the polishing pad 100 according to one embodiment secures a process advantage by the window 102 by applying specific structural features when introducing the window 102, and at the same time, the window ( 102) can function as a process component that can manufacture excellent semiconductor devices by minimizing negative factors due to local heterogeneity of the introduced part.

FIG. 2 schematically shows a cross-sectional view of the polishing pad 100 according to an embodiment, and specifically shows a schematic cross section taken along line XX' of FIG. 1. Referring to FIG. 2, the polishing pad 100 includes a polishing layer 10, and the polishing layer 10 has a first surface 11, which is a polishing surface, and a second surface 12, which is the rear surface. Includes. In addition, the polishing layer 10 includes a first through hole 101 penetrating from the first surface 11 to the second surface 12, and the window 102 includes the first through hole ( 101).

In addition, the polishing pad 100 further includes a support layer 20 disposed on the second surface 12 of the polishing layer 10. The support layer 20 includes a third surface 21 on the side of the polishing layer 10 and a fourth surface 22 on the rear surface, from the third surface 21 to the fourth surface 22. It includes a second through hole 201 that penetrates and is connected to the first through hole 101. The second through-hole 201 is formed to be connected to the first through-hole 101, so that the polishing pad 100 includes a light-pass that penetrates the entire thickness from the top end to the bottom end. Thus, the optical endpoint detection method through the window 102 can be applied efficiently.

In the polishing pad 100, the second through hole 102 is smaller than the first through hole 101, and the lowest end surface of the window 101 is supported by the third surface 21. You can. As the second through hole 102 is formed smaller than the first through hole 101, a support surface capable of supporting the window 101 is created on the third surface 21. At this time, a first adhesive layer 30 is included between the lowest end surface of the window and the third surface 21. Additionally, between the second surface 12 and the third surface 21; And a second adhesive layer 40 is included between the lowermost end surface of the window and the third surface 21. Accordingly, a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 is included between the lowest end surface of the window and the third surface 21, and a water leak prevention effect is achieved through this multi-stage adhesive structure. It can be greatly improved. Specifically, the polishing process using the polishing pad 100 is performed while supplying a fluid such as liquid slurry onto the polishing surface 11. At this time, the side of the window 102 and the first through hole ( Components derived from these fluids may flow into the interface between the sides of 101). If the fluid component thus transmitted passes through the second through hole 201 and flows into the polishing device at the bottom of the polishing pad 100, it may cause malfunction of the polishing device or interfere with accurate detection of the end point of the window 102. There is a risk of doing so. From this perspective, the polishing pad 100 forms the second through hole 201 smaller than the first through hole 101 to form a support surface of the window 102 on the third surface 21. At the same time, the water leak prevention effect can be greatly improved by forming a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 on the support surface.

In addition, the polishing pad 100 includes a partially compressed region (CR) in the support layer 20 in order to maximize the water leak prevention effect. Specifically, referring to FIG. 2, the compressed portion CR is formed in a region corresponding to the lowermost cross section of the window 102 of the support layer 20. At this time, the area corresponding to the lowest cross section of the window 102 refers to a predetermined area including a portion of the support layer 20 corresponding to the lowest cross section of the window 102, and is an extension of the side of the window 102. and the inner end of the compressed portion (CR) do not necessarily need to coincide. That is, the compression portion (CR) is located on a predetermined area to include all of the portion corresponding to the lowest end surface of the window 102 from the side of the second through hole 201 toward the inside of the support layer 20. It is enough to be formed.

In one embodiment, the compression portion (CR) has a continuous structure to include all portions corresponding to the lowermost cross-section of the window 102 in the direction from the side of the second through hole 201 toward the inside of the support layer. You can have it. Explained from another aspect, the compressed section (CR) is a continuous compressed area that includes all parts corresponding to the bottom surface of the window 102, and consists of two or more compressed areas divided by the non-compressed section (NCR). May not be included. Explained from another aspect, the compression portion CR may be a continuous compression area integrally formed to include all portions corresponding to the bottom end surface of the window 102. That is, the compressed portion CR is a continuous compressed region formed by pressing from the fourth surface 22, which is the lower surface of the support layer 20, and does not include two or more compressed regions with different pressing directions during the formation process. Through this, not only can process efficiency be maximized, but the high-density area formed by the pressurization process can be more advantageous in improving the leak prevention effect.

In this way, by forming the compression region (CR) in the region corresponding to the lowest cross-section of the window 102 of the support layer 20, the compression region (CR) has a high density region compared to the non-compression region (NCR). It can be configured, and through this, it can effectively prevent fluid components that can flow into the interface between the side of the window 102 and the side of the first through hole 101 together with the multi-stage adhesive layer. . As a result, the polishing pad 100 according to one embodiment has a multi-stage adhesive layer structure between the lowermost end surface of the window 102 and the third surface 21 and a compression portion (CR) structure of the support layer 20. By being organically combined, a significantly improved water leak prevention effect can be achieved compared to the past.

In one embodiment, the first adhesive layer 30 may include a moisture-curable resin, and the second adhesive layer 40 may include a thermoplastic resin. In one implementation, the first adhesive layer 30 and the second adhesive layer 40 may be sequentially arranged in a direction from the bottom end of the window 102 toward the third surface 21. The first adhesive layer 30 is an adhesive layer that primarily comes into contact with fluid components leaked between the side of the window 102 and the side of the first through hole 101. The first adhesive layer 30 is made of moisture-curable resin. By including , the leak prevention effect can be greatly improved. The second adhesive layer 40 is also a component of a multi-stage adhesive layer between the lowermost end surface of the window 102 and the third surface 21, and is used to attach the polishing layer 10 and the support layer 20. As a layer disposed between the second surface 12 and the third surface 21, the second adhesive layer 40 includes a thermoplastic resin and is laminated together with the first adhesive layer 30 to provide a water leak prevention effect. At the same time, excellent interfacial durability of the polishing layer 10 and the support layer 20 can be secured.

The first adhesive layer 30 includes aromatic diisocyanate; and a moisture-cured product of a moisture-curable adhesive composition containing a urethane-based prepolymer polymerized from a monomer component containing polyol. Here, 'moisture curing' refers to the property in which moisture acts as a curing initiator, and the moisture curable adhesive composition refers to an adhesive composition in which moisture in the air acts as a curing initiator. In this specification, 'prepolymer' refers to a polymer having a relatively low molecular weight in which the degree of polymerization is stopped at an intermediate stage to facilitate molding in the production of a cured product. The prepolymer itself undergoes an additional curing process such as heating and/or pressing, or is reacted by mixing with other polymerizable compounds, for example, additional compounds such as heterogeneous monomers or heterogeneous prepolymers, and then produces a final cured product. It can be molded into .

The first adhesive layer 30 is derived from a moisture-curable adhesive composition containing a urethane-based prepolymer polymerized from the monomer component, thereby significantly improving the interfacial adhesion between the window 102 and the first adhesive layer 30, Based on the excellent compatibility of the first adhesive layer 30 and the second adhesive layer 40, the water leak prevention effect can be greatly improved.

More specifically, the first adhesive layer 30 is an aromatic diisocyanate of the following formula (1); and a urethane-based prepolymer formed by polymerization from a monomer component containing a diol having 2 to 10 carbon atoms; and a moisture-cured product of a moisture-curable adhesive composition containing unreacted aromatic diisocyanate of the following formula (1).

[Formula 1]

For example, the monomer component may include a diol having 2 to 10 carbon atoms, for example, 3 to 10 carbon atoms, for example, 4 to 10 carbon atoms, for example, 5 to 10 carbon atoms.

More specifically, the first adhesive layer 30 is an aromatic diisocyanate of Formula 1; Diol of formula 2 below; and a urethane-based prepolymer polymerized from a monomer component containing a diol of the following formula (3); and a moisture-cured product of a moisture-curable adhesive composition containing unreacted aromatic diisocyanate of Formula 1 above.

[Formula 2]

[Formula 3]

The adhesive composition may include about 90% by weight to about 99% by weight of the urethane-based prepolymer and about 1% by weight to about 10% by weight of the unreacted aromatic diisocyanate. For example, it may include about 91% by weight to about 99% by weight of the urethane-based prepolymer, for example, about 93% by weight to about 99% by weight, for example, about 95% by weight to about 99% by weight, The unreacted aromatic diisocyanate may be included in an amount of about 1% by weight to about 9% by weight, for example, about 1% by weight to about 7% by weight, for example, about 1% by weight to about 5% by weight. The unreacted aromatic diisocyanate refers to diisocyanate in which the isocyanate group (-NCO) at both ends exists in a state in which the urethane reaction has not occurred.

In one embodiment, the moisture-cured product of the moisture-curable adhesive composition is obtained by pressure and ultrasonic fusion of the moisture-curable adhesive composition; Pressurizing and heat sealing; Alternatively, it may be the result of pressurization, ultrasonic fusion, and heat fusion processing.

The adhesive composition for the first adhesive layer 30 may have a viscosity of about 5,000 mPa.s to about 10,000 mPa.s, for example, about 6,000 mPa.s to about 9,000 mPa.s at room temperature. Here, room temperature means a temperature within the range of about 20°C to about 30°C. As the viscosity of the adhesive composition satisfies this range, excellent process efficiency can be secured in the process of forming the first adhesive layer 30, and at the same time, the density of the first adhesive layer 30 formed by curing the adhesive composition increases. It may be more advantageous in preventing water leakage.

Specifically, the second adhesive layer 40 may include one selected from the group consisting of a thermoplastic urethane-based adhesive, a thermoplastic acrylic adhesive, a thermoplastic silicone-based adhesive, and a combination thereof. Since the second adhesive layer 40 includes a thermoplastic resin, a technical advantage can be obtained in terms of improved process efficiency compared to the case where the second adhesive layer 40 includes a thermosetting resin. Specifically, when a thermosetting adhesive is used as the second adhesive layer 40, it is difficult to apply a roll-to-roll process, which reduces the efficiency of mass production, and roll-to-roll (Roll-to-roll) process is difficult to apply. Since a spray application method must be used instead of a roll, there is a risk that pad contamination due to scattering may increase. That is, the second adhesive layer 40 is a large-area layer formed between the second surface and the third surface. By applying a thermoplastic adhesive, the second adhesive layer 40 increases process efficiency, prevents contamination of the polishing pad, significantly reduces the defect rate, and reduces moisture content. It may be more advantageous to ensure excellent compatibility with the first adhesive layer 40 derived from a curable adhesive in terms of securing a water leak prevention effect.

In one embodiment, the second adhesive layer 40 has a thickness of about 15 μm to about 40 μm, for example, about 15 μm to about 35 μm, for example, about 20 μm to about 35 μm, for example. , may be about 22㎛ to about 32㎛. The thickness of the second adhesive layer 40 satisfies the above range, thereby ensuring sufficient adhesion between the second surface 12 and the third surface 21, and at the same time, multiple layers on the lowermost end surface of the window 102. As a component of the adhesive layer, it may be more advantageous to contribute to the water leak prevention effect.

Referring to FIG. 2, in the polishing pad 100 according to one embodiment, the first adhesive layer 30 is disposed between the side of the window 102 and the side of the first through hole 101. It may not work. Explained from another aspect, the first adhesive layer 30 can be contacted only through the window 102 and the lowest end surface of the window 102. That is, the length of the first adhesive layer 20 disposed between the side of the window 102 and the side of the first through hole 101 may be 0 μm. Through this structure, the gap between the side of the window 102 and the side of the first through hole 101 can be minimized, and as a result, the introduction of the liquid component itself can be prevented or process residues can be minimized. A technical advantage can be obtained in terms of preventing water (debris) etc. from accumulating in the gap.

Figure 3 schematically shows a cross-sectional view of the polishing pad 100' according to another embodiment. Referring to FIG. 3 , the first adhesive layer 30 may also be disposed between the side surface of the window 102 and the side surface of the first through hole 101 . Explained from another aspect, the first adhesive layer 30 includes the window 102 and the lowest cross section of the window 102; and can be accessed through the side of the window 102. The length L1 of the first adhesive layer 30 disposed between the side of the window 102 and the side of the first through hole 101 is, for example, about 0.1 μm to about 20 μm, for example. For example, it may be from about 0.1 μm to about 10 μm, for example from 0.1 μm to about 5 μm. Through this structure, a technical advantage can be obtained in terms of minimizing the path through which liquid components can move from the uppermost surface and polished surface of the window and preventing debris from being deposited.

2 or 3, the width W3 of the first adhesive layer 30 disposed on the lowermost surface of the window 102 is on the third surface 21 of the lowermost surface of the window 102. It may be equal to or longer than the width (W2) of the part supported by. Through this structure, the distal end of the interface between the side of the window 102 and the side of the first through hole 101 can be effectively sealed by the first adhesive layer 30, which is more advantageous in terms of improving the water leak prevention effect. You can.

The width W3 of the first adhesive layer 30 disposed on the lowermost surface of the window 102 is about 2 mm to about 15 mm, for example, about 2 mm to about 12 mm, for example, about 2 mm to about 10 mm, For example, it may be from about 2.5 mm to about 9.5 mm, for example from about 3.5 mm to about 9.5 mm. The width W3 of the first adhesive layer 30 satisfies the above range, and the correlation with the width W2 of the portion supported by the third surface 21 among the lowest cross sections of the window 102 is as described above. By satisfying this requirement, efficiency can be increased in terms of securing the light transmission area of the window as wide as possible and securing structural durability supported by the support layer. In addition, it may be advantageous in terms of securing a path long enough to block liquid components that may leak through the interface between the side of the window 102 and the side of the first through hole 101.

Referring to FIG. 2, as described above, the support layer 20 includes a compression portion (CR) in the region corresponding to the lowermost cross section of the window 102, and at the same time, the support layer 20 includes a compression portion (CR) in the region excluding the compression portion (CR). It may include a non-compressed portion (NCR). The non-compressed portion (NCR) has a predetermined porosity and acts as a buffer to prevent external force applied to the polishing pad 100 from being transmitted to the polishing object through the polishing surface 11, and the polishing layer 10 can play a supporting role.

Referring to FIG. 2, the percentage of the thickness (H2) of the compressed portion (CR) relative to the thickness (H1) of the non-compressed portion (NCR) is about 0.01% to about 80%, for example, about 0.01% to about 80%. About 60%, such as about 0.01% to about 50%, such as about 0.1% to about 50%, such as about 1% to about 50%, such as about 1% to about 45% %, for example from about 2% to about 45%, for example from about 5% to about 45%, for example from about 10% to about 45%, for example from about 15% to about 45%, For example, it may be about 20% to about 45%. That is, the value of H2/H1*100 can satisfy the above range. By compressing the compressed portion (CR) to have a thickness that satisfies the percentage of the above range compared to the thickness of the non-compressed portion (NCR), it is more advantageous to improve the water leak prevention effect together with the multi-stage adhesive layer structure of the lowermost surface of the window 102. You can. In addition, the compressed portion (CR) can form a high-density area that is effective in preventing water leakage without impeding the buffering and supporting functions of the non-compressed portion (NCR).

Referring to FIG. 2, the percentage of the thickness H2 of the compressed portion CR relative to the width of the compressed portion CR is about 0.01% to about 30%, for example, about 0.01% to 20%, e.g. For example, from about 0.1% to about 20%, for example from about 1% to about 20%, for example from about 1% to about 15%, for example from about 2% to about 15%, for example , may be from about 2% to about 10%, for example from about 3% to about 9%. As the thickness of the compressed portion (CR) satisfies this ratio to the width, it can be advantageous for the compressed portion (CR) area to achieve an optimal water leak prevention effect without impairing the overall supporting ability of the support layer (20). .

Figure 4 is an enlarged schematic diagram of part B of Figure 2. Referring to FIG. 4 , the top end surface 102 of the window may be lower in height than the first surface 11 . Specifically, the height difference d3 between the window top end surface 102 and the first surface 11 is about 0㎛ to about 300㎛, for example, about 0㎛ to about 250㎛, for example, about It may be from 50 μm to about 250 μm, for example from about 50 μm to about 150 μm. Since the height difference between the uppermost end surface of the window 102 and the first surface 11 has the correlation as described above, liquid flows to the interface between the side of the window 102 and the side of the first through hole 101. This can be advantageous in terms of minimizing the possibility of ingredients leaking. More specifically, the surface hardness of the top end surface of the window 102 and the first surface 11 satisfy the relationship described later, and the height difference between the top end surface of the window 102 and the first surface 11 is By satisfying the above, the polishing interface can move smoothly during the polishing process across the top end surface of the window 102 and the entire first surface 11, which can be more advantageous in maximizing the water leak prevention effect. there is.

Figure 5 is an enlarged schematic diagram of portion A of Figure 2. Referring to FIG. 5, the first surface 11 may include at least one groove (Groove, 111). The groove 111 is a groove structure machined to a depth d1 smaller than the thickness D1 of the polishing layer 10, and is used to absorb the polishing slurry, cleaning liquid, etc. applied to the first surface 11 during the polishing process. It can perform the function of securing the fluidity of liquid ingredients. The fluidity of the polishing slurry applied to the first surface 11 is closely related to water leakage through the interface between the side of the window 102 and the side of the first through hole 101, and the groove ( 111) can contribute to maximizing the water leak prevention effect of the polishing pad 100 through appropriate structural design.

In one embodiment, the planar structure of the polishing pad 100 may be substantially circular, and the at least one groove 111 extends from the center of the polishing layer 10 on the first surface 11 to an end. It may be a concentric circular structure spaced apart at a predetermined interval. In another implementation, the at least one groove 111 may have a radial structure formed continuously from the center of the polishing layer 10 on the first surface 11 toward the end. In another embodiment, the at least one groove 111 may include both a concentric circular structure and a radial structure.

In one embodiment, the thickness D1 of the polishing layer is about 0.8 mm to about 5.0 mm, such as about 1.0 mm to about 4.0 mm, such as about 1.0 mm to about 3.0 mm, such as about It may be from 1.5 mm to about 3.0 mm, for example from about 1.7 mm to about 2.7 mm, for example from about 2.0 mm to about 3.5 mm.

In one embodiment, the width w1 of the groove 111 is about 0.1 mm to about 20 mm, for example, about 0.1 mm to about 15 mm, for example, about 0.1 mm to about 10 mm, for example, about It may be from 0.1 mm to about 5 mm, for example from about 0.1 mm to about 1.5 mm.

In one embodiment, the depth d1 of the groove 111 is from about 100 μm to about 1500 μm, for example, from about 200 μm to about 1400 μm, for example from about 300 μm to about 1300 μm, for example. For example, it may be from about 400 μm to about 1200 μm, for example from about 400 μm to about 1000 μm, for example from about 400 μm to about 800 μm.

In one embodiment, when the first surface 11 includes a plurality of grooves 111 and the plurality of grooves 111 include concentric circular grooves, two adjacent grooves 111 of the concentric circular grooves The pitch (p1) between may be about 2 mm to about 70 mm, for example, about 2 mm to about 60 mm, for example, about 2 mm to about 50 mm, for example, about 2 mm to about 35 mm, for example For example, it may be from about 2 mm to about 10 mm, for example from about 2 mm to about 8 mm.

The at least one groove 111 satisfies each or all of the depth (d1), width (w1), and pitch (p1) of the above-described ranges, so that the fluidity of the polishing slurry realized through the groove 111 is formed on the side of the window 102. It can be appropriately secured to maximize the effect of preventing water leakage through the interface between the surface and the side of the first through hole 101. In another aspect, the depth (d1), width (w1), and pitch (p1) of the at least one groove 111 are outside the above-mentioned range, and the fluidity of the polishing slurry implemented through the groove 111 is too fast or the unit time If the sugar flow rate is too high, there is a risk that the polishing slurry component cannot perform its original function and is discharged outside the first surface 11. Conversely, if the fluidity of the polishing slurry is too slow or the flow rate per unit time is excessively high, In small cases, the slurry component that must perform physical and chemical polishing functions on the polishing surface fails to perform its original function and escapes through the interface between the side of the window 102 and the side of the first through hole 101. As this rapidly increases, there is a risk of deteriorating the long-term durability of the multi-stage adhesive structure of the first adhesive layer 30 and the second adhesive layer 4 and the water leak prevention effect through the compressed portion of the support layer. That is, the at least one groove 111 satisfies each or all of the depth (d1), width (w1), and pitch (p1) of the above-mentioned range, thereby maximizing the effect of preventing water leakage through the multi-stage adhesive structure and the compression portion. It can be advantageous to become

Referring to FIG. 5, the polishing layer 10 may have a porous structure including a plurality of pores 112. The plurality of pores 112 are dispersed throughout the polishing layer 10, and continuously create a predetermined roughness on the surface even when the polishing surface 11 is ground by a conditioner or the like during the polishing process. can perform its role. A portion of the plurality of pores 112 may be exposed to the outside on the first surface 11 of the polishing layer 10 and may appear as a fine concave portion 113 that is distinct from the groove 111. The fine concave portion 113 may perform the function of determining the fluidity and retention space of the polishing liquid or polishing slurry together with the groove 112 during use of the polishing pad 100, and may be used for polishing the surface to be polished. It can physically perform the function of providing friction.

The average pore size of the plurality of pores 112 is about 10 μm to about 30 μm, for example, about 10 μm to about 25 μm, for example, about 15 μm to about 25 μm, for example, about 18 μm. It may be from ㎛ to about 23㎛. The average pore size is obtained by observing a cross-section of a 1 mm2 polished surface of the polishing pad cut into a 1 mm x 1 mm square (thickness: 2 mm) and magnified 100 times using a scanning electron microscope (SEM). The diameters of all pores were measured from the obtained images using analysis software, and the number of pores was obtained. The average pore size was derived as the number average value obtained by dividing the sum of the diameters of a plurality of pores within 1 mm2 of the polished surface by the number of pores. The polishing layer 10 can have appropriate mechanical properties by having a porous structure composed of a plurality of pores that satisfy the average pore size, and these mechanical properties have excellent compatibility with the mechanical and physical properties of the window 102. It can be more advantageous in terms of preventing water leakage by minimizing the occurrence of leaks where liquid components leak between the polishing layer 10 and the window 102.

The first surface 11 may have a predetermined surface roughness due to the fine concave portion 113. In one embodiment, the surface roughness (Ra) of the first surface 11 is about 1 μm to about 20 μm, for example, about 2 μm to about 18 μm, for example, about 3 μm to about 16 μm. , for example, from about 4 μm to about 14 μm, for example, from about 4 μm to about 10 μm. The surface roughness (Ra) of the first surface 11 satisfies the above range, so that the fluidity of the polishing slurry due to the fine concave portion 113 is appropriate in relation to the multi-stage adhesive structure and the leakage prevention effect of the compressed portion. It may be advantageous to secure it.

Figure 6 schematically shows a cross section of the polishing pad 200 according to another embodiment. Referring to FIG. 6 , the polishing pad 200 may further include a recess portion 103 at the bottom surface of the window 102 . The recess 103 is a recess processed to have a predetermined depth d2 in the direction from the bottom end of the window 102 to the top end, and allows light to pass through the window 102 to detect the end point. By shortening the path, more accurate endpoint detection can be achieved.

The recess 103 may have a depth d2 that is smaller than the thickness D2 of the window 102. The thickness D2 of the window 102 may be about 1.5 mm to about 3.0 mm, for example, about 1.5 mm to about 2.5 mm, for example, about 2.0 mm to 2.2 mm. The depth d2 of the recess 103 is, for example, about 0.1 mm to about 2.5 mm, for example, about 0.1 mm to about 2.0 mm, for example, about 0.1 mm to about 1.5 mm, e.g. For example, it may be about 0.6 mm to about 1.0 mm. The end point detection function can be excellently implemented by satisfying the above ranges individually or simultaneously with the thickness D2 of the window 102 and the depth d2 of the recess 103. In addition, at the same time, as the length of the path where water leakage can occur appears to be the same length as the depth of the window 102, an effective structure can be secured in terms of water leak prevention.

In one embodiment, the Shore D hardness measured in a dry state at room temperature for the first surface 11 may be smaller than the Shore D hardness measured in a dry state at room temperature for the uppermost surface of the window 102. there is. Here, the room temperature dry state means a dry state under temperature conditions within the range of about 20°C to about 30°C without treatment of the wet conditions described later. For example, the difference between the Shore D hardness of the first surface 11 measured in a dry state at room temperature and the Shore D hardness measured in a dry state at room temperature for the uppermost surface of the window 102 is about 5 to about 10. , for example from about 5 to about 7, for example from about 5.5 to about 6.5.

In one embodiment, the Shore D hardness of the uppermost surface of the window 102 measured in a dry state at room temperature is about 60 to about 70, for example, about 60 to about 68, for example, about 60. It can be from about 65. In one embodiment, the Shore D hardness of the first surface 11 measured in a dry state at room temperature may be about 50 to about 65, for example, about 53 to 65.

In one embodiment, the difference between the Shore D wet hardness measured at 30°C for the top surface of the window 102 and the Shore D wet hardness measured in a dry state at room temperature for the top surface of the window 102 is about 0 to about 0. 1.0, for example from about 0 to about 0.8.

In one embodiment, the Shore D wet hardness measured at 50°C for the top surface of the window 102 may be smaller than the Shore D wet hardness measured in a dry state at room temperature for the top surface of the window 102. For example, the difference between the Shore D wet hardness measured at 50°C for the top surface of the window 102 and the Shore D wet hardness measured in a dry state at room temperature for the top surface of the window 102 is about 1 to about 7. , for example from about 1 to about 6, for example from about 1 to 5.5.

In one embodiment, the Shore D wet hardness measured at 70°C for the top surface of the window 102 may be smaller than the Shore D wet hardness measured in a dry state at room temperature for the top surface of the window 102. For example, the difference between the Shore D wet hardness measured at 70°C for the top surface of the window 102 and the Shore D wet hardness measured in a dry state at room temperature for the top surface of the window 102 is about 5 to about 10. , for example from about 6 to about 10, for example from about 7 to 10.

In one embodiment, the Shore D wet hardness measured at 30°C of the first surface 11 of the polishing layer 10 is Shore D (measured at 30°C of the uppermost surface of the window 30) Shore D) may be less than wet hardness. For example, the difference in Shore D wet hardness measured at 30°C between the first surface 11 of the polishing layer and the uppermost surface of the window 30 may be greater than about 0 and less than or equal to about 15, e.g. For example, it may be from about 1 to about 15, for example, from about 2 to about 15.

In one embodiment, the Shore D wet hardness measured at 50°C of the first surface 11 of the polishing layer is the Shore D wet hardness measured at 50°C of the uppermost surface of the window 30. It may be smaller than hardness. For example, the difference in Shore D wet hardness measured at 50°C between the first surface 11 of the polishing layer and the uppermost surface of the window 30 may be greater than about 0 and less than or equal to about 15, e.g. For example, it can be about 1 to about 25, for example, it can be about 5 to about 25, for example, it can be about 5 to about 15.

In one embodiment, the Shore D wet hardness measured at 70°C of the first surface 11 of the polishing layer is the Shore D wet hardness measured at 70°C of the uppermost surface of the window 30. It may be smaller than hardness. For example, the difference in Shore D wet hardness measured at 70°C between the first surface 11 of the polishing layer and the uppermost surface of the window 30 may be greater than about 0 and less than or equal to about 15, e.g. For example, it can be about 1 to about 25, for example, it can be about 5 to about 25, for example, it can be about 8 to about 16.

Here, the Shore D wet hardness is a surface hardness value measured after immersing the window 30 or the polishing layer 10 in water at the corresponding temperature for 30 minutes.

The polishing process to which the polishing pad 100 is applied is mainly a process of polishing while applying a liquid slurry on the first surface 11. Additionally, the temperature of the polishing process can vary primarily in the range of about 30°C to about 70°C. That is, the change in hardness of the uppermost section of the window 102, derived based on the Shore D hardness measured under temperature conditions and a wet environment similar to the actual process, satisfies the above-described tendency, and at the same time, the Since the hardness relationship between the first surface 11 and the uppermost surface of the window 102 satisfies the above-mentioned range, the polishing operation is performed during polishing over the uppermost surface of the window 102 and the entire first surface 11. It may be advantageous to minimize the possibility of water leakage where liquid components escape through the interface between the side of the first through hole 101 and the side of the window 102 as it progresses smoothly.

In one embodiment, the window 102 may include a non-foaming cured product of a window composition containing a first urethane-based prepolymer. Since the window 102 includes a non-foamed cured material, it may be more advantageous to secure the light transmittance and appropriate surface hardness required for end point detection compared to the case where the window 102 includes a foamed cured material. The term 'prepolymer' refers to a polymer having a relatively low molecular weight in which the degree of polymerization is stopped at an intermediate stage to facilitate molding in the production of a cured product. The prepolymer itself undergoes an additional curing process such as heating and/or pressing, or is reacted by mixing with other polymerizable compounds, for example, additional compounds such as heterogeneous monomers or heterogeneous prepolymers, and then produces a final cured product. It can be molded into .

The first urethane-based prepolymer may be produced by reacting a first isocyanate compound and a first polyol compound. The first isocyanate compound may include one selected from the group consisting of aromatic diisocyanate, aliphatic diisocyanate, alicyclic diisocyanate, and combinations thereof. In one embodiment, the first isocyanate compound may include aromatic diisocyanate and alicyclic diisocyanate.

The first isocyanate compound is, for example, 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-toluenediisocyanate, 2,6- TDI) naphthalene-1,5-diisocyanate, p-phenylenediisocyanate, tolidinediisocyanate, 4,4'-diphenylmethane diisocyanate (4) ,4'-diphenylmethanediisocyanate), hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, 4,4'-dicyclohexylmethanediisocyanate (4,4'-dicyclohexylmethanediisocyanate, H ₁₂ MDI), iso It may include one selected from the group consisting of isoporone diisocyanate and combinations thereof.

The first polyol compound is, for example, a group consisting of polyether polyol, polyester polyol, polycarbonate polyol, acryl polyol, and combinations thereof. It may include one selected from. The term ‘polyol’ refers to a compound containing at least two hydroxy groups (-OH) per molecule. In one embodiment, the first polyol compound may include a dihydric alcohol compound having two hydroxy groups, that is, diol or glycol. In one embodiment, the first polyol compound may include a polyether-based polyol.

The first polyol compound is, for example, polytetramethylene ether glycol (PTMG), polypropylene ether glycol, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3 -Butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diol It may include one selected from the group consisting of ethylene glycol (DEG), dipropylene glycol (DPG), tripropylene glycol, polypropylene glycol (PPG), and combinations thereof.

In one embodiment, the weight average molecular weight (Mw) of the first polyol compound may be about 100 g/mol to about 3,000 g/mol, for example, about 100 g/mol to about 2,000 g/mol, for example , may be from about 100 g/mol to about 1,800 g/mol, for example from about 500 g/mol to about 1,500 g/mol, for example from about 800 g/mol to about 1,200 g/mol.

In one embodiment, the first polyol compound is a low molecular weight polyol having a weight average molecular weight (Mw) of about 100 g/mol or more and less than about 300 g/mol and a weight average molecular weight (Mw) of about 300 g/mol or more and about 1800 g/mol. It may contain the following high molecular weight polyol. By using an appropriate mixture of the low molecular weight polyol and the high molecular weight polyol having a weight average molecular weight in the above range as the first polyol compound, a non-foamed cured product having an appropriate crosslinked structure can be formed from the first urethane-based prepolymer, The window 102 may be more advantageous in securing desired physical properties such as hardness and optical properties such as light transmittance.

The weight average molecular weight (Mw) of the first urethane-based prepolymer may be about 500 g/mol to about 2000 g/mol, for example, about 800 g/mol to about 1500 g/mol, for example, about 900 g/mol. mol to about 1200 g/mol, such as about 950 g/mol to about 1100 g/mol. Since the first urethane-based prepolymer has a degree of polymerization corresponding to the weight average molecular weight (Mw) in the above-mentioned range, the window composition is non-foaming cured under predetermined process conditions to achieve an appropriate mutual surface hardness with the polished surface of the polishing layer 10. It may be more advantageous to form the window 102 having a relationship, and through this, polishing may proceed smoothly across the polished surface and the entire top end surface of the window 102, which may be advantageous in terms of preventing water leakage.

In one embodiment, the first isocyanate compound may include aromatic diisocyanate and alicyclic diisocyanate. The aromatic diisocyanate may include, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the cycloaliphatic diisocyanate may include It may include dicyclohexylmethane diisocyanate (H ₁₂ MDI). Additionally, the first polyol compound may include, for example, polytetramethylene ether glycol (PTMG), diethylene glycol (DEG), and polypropylene glycol (PPG).

In the window composition, the total amount of the first polyol compound may be about 100 parts by weight to about 250 parts by weight, compared to 100 parts by weight of the first isocyanate compound in all components for producing the first urethane-based prepolymer, e.g. For example, it may be about 120 parts by weight to about 250 parts by weight, for example, it may be about 120 parts by weight to about 240 parts by weight, for example, it may be about 150 parts by weight to about 240 parts by weight, for example , may be about 150 parts by weight to about 200 parts by weight.

In the window composition, the first isocyanate compound includes the aromatic diisocyanate, the aromatic diisocyanate includes 2,4-TDI and 2,6-TDI, and the content of 2,6-TDI is as described above. It may be about 1 part by weight to about 40 parts by weight, for example, about 1 part by weight to about 30 parts by weight, for example, about 10 parts by weight to about 30 parts by weight, based on 100 parts by weight of 2,4-TDI. parts, for example, about 15 parts by weight to about 30 parts by weight.

In the window composition, the first isocyanate compound includes the aromatic diisocyanate and the cycloaliphatic diisocyanate, and the total content of the cycloaliphatic diisocyanate is about 5 parts by weight relative to 100 parts by weight of the total content of the aromatic diisocyanate. It may be about 30 parts by weight, for example, about 10 parts by weight to about 30 parts by weight, for example, about 15 parts by weight to about 30 parts by weight.

The relative content ratio of each component of the window composition satisfies the above-mentioned range individually or simultaneously, so that the window 102 manufactured therefrom secures the light transmittance required for the end point detection function, and at the same time, its uppermost surface has an appropriate surface hardness. You can. Accordingly, the uppermost surface of the window 102 forms an appropriate mutual surface hardness relationship with the polished surface of the polishing layer 10 manufactured from a polishing layer composition in which the relative content ratios of each component satisfy the conditions described below, respectively or simultaneously. It is possible to effectively prevent water leakage between the side of the window 102 and the side of the first through hole 101 by smoothly polishing the polishing surface and the uppermost surface of the window repeatedly. It may be more advantageous.

The window composition may have an isocyanate group content (NCO%) of about 6% by weight to about 10% by weight, for example, about 7% by weight to about 9% by weight, for example, about 7.5% by weight. It may be from about 8.5% by weight. The isocyanate group content refers to the percentage by weight of the isocyanate group (-NCO) that is not reacted with urethane and exists as a free reactor in the total weight of the window composition. The isocyanate group content includes the type and content of the first isocyanate compound and the first polyol compound for producing the first urethane-based prepolymer, conditions such as temperature, pressure, and time in the process for producing the first urethane-based prepolymer, and It can be designed by comprehensively controlling the types and contents of additives used in the production of the first urethane-based prepolymer. When the isocyanate group content of the window composition satisfies the above range, the window composition can be cured without foaming to secure appropriate surface hardness, and it is advantageous to maximize the water leak prevention effect to secure an appropriate hardness relationship with the polishing layer. can be advantageous.

The window composition may further include a hardener. The curing agent is a compound for chemically reacting with the first urethane-based prepolymer to form a final cured structure within the window, and may include, for example, an amine compound or an alcohol compound. Specifically, the curing agent may include one selected from the group consisting of aromatic amine, aliphatic amine, aromatic alcohol, aliphatic alcohol, and combinations thereof.

The curing agent is, for example, 4,4'-methylenebis(2-chloroaniline) (4,4'-methylenebis(2-chloroaniline); MOCA), diethyltoluenediamine (DETDA), and diaminodiphenyl. Methane (diaminodiphenylmethane), dimethyl thio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate, Methylene bis-methylanthranilate, diaminodiphenylsulfone, m -Xylylenediamine (m-xylylenediamine), isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine It may include one selected from the group consisting of polypropylenetriamine, bis(4-amino-3-chlorophenyl)methane, and combinations thereof.

The content of the hardener may be from about 18 parts by weight to about 28 parts by weight, for example, from about 19 parts by weight to about 27 parts by weight, for example, from about 20 parts by weight, based on 100 parts by weight of the window composition. It may be about 26 parts by weight.

In one embodiment, the curing agent may include an amine compound, and the molar ratio of the isocyanate group (-NCO) in the window composition to the amine group (-NH ₂ ) in the curing agent is about 1:0.60 to about 1:0.99. may be, for example, about 1:0.60 to about 1:0.95.

As described above, the window may include a non-foaming cured product of the window composition. Accordingly, the window composition may not contain a foaming agent. By undergoing a curing process without a foaming agent, the window composition can secure the light transmittance necessary for end point detection.

The window composition may further include additives as needed. The type of additive may include one selected from the group consisting of surfactants, pH adjusters, binders, antioxidants, heat stabilizers, dispersion stabilizers, and combinations thereof. The names such as 'surfactant' and 'antioxidant' are arbitrary names based on the main role of the substance, and each substance does not necessarily perform only the functions limited to the role under the name.

In one embodiment, the window 102 has a light transmittance of about 1% to about 50%, for example, about 30% to about 50%, for light having one wavelength in the wavelength range of about 500 nm to about 700 nm with respect to a thickness of 2 mm. About 85%, such as about 30% to about 70%, such as about 30% to about 60%, such as about 1% to about 20%, such as about 2% to about 20% %, for example from about 4% to about 15%. The light transmittance of the window can be adjusted depending on whether the window surface is treated, the composition of the window, etc. Since the window 102 has this light transmittance and at the same time the uppermost end surface of the window 102 and the polished surface of the polishing layer 10 have the above-described hardness relationship, an excellent water leak prevention effect can be ensured. .

In one embodiment, the polishing layer 10 may include a foamed cured product of a polishing layer composition including a second urethane-based prepolymer. The polishing layer 10 may have a pore structure by including a foamed cured material, and this pore structure forms a surface roughness on the polishing surface that cannot be formed with a non-foaming cured material, thereby forming a surface roughness of the polishing slurry applied to the polishing surface. It can perform the function of appropriately securing fluidity and physical friction with the polished surface of the polishing target. The term 'prepolymer' refers to a polymer having a relatively low molecular weight in which the degree of polymerization is stopped at an intermediate stage to facilitate molding in the production of a cured product. The prepolymer itself undergoes an additional curing process such as heating and/or pressing, or is reacted by mixing with other polymerizable compounds, for example, additional compounds such as heterogeneous monomers or heterogeneous prepolymers, and then produces a final cured product. It can be molded into .

The second urethane-based prepolymer may be produced by reacting a second isocyanate compound and a second polyol compound. The second isocyanate compound may include one selected from the group consisting of aromatic diisocyanate, aliphatic diisocyanate, alicyclic diisocyanate, and combinations thereof. In one embodiment, the second isocyanate compound may include aromatic diisocyanate. For example, the second isocyanate compound may include aromatic diisocyanate and alicyclic diisocyanate.

The second isocyanate compound is, for example, 2,4-toluenediisocyanate (2,4-TDI), 2,6-toluenediisocyanate (2,6-TDI) ) Naphthalene-1,5-diisocyanate, p-phenylenediisocyanate, tolidinediisocyanate, 4,4'-diphenylmethane diisocyanate (4, 4'-diphenylmethanediisocyanate), hexamethylenediisocyanate, dicyclohexylmethanediisocyanate, 4,4'-dicyclohexylmethanediisocyanate (4,4'-dicyclohexylmethanediisocyanate, H ₁₂ MDI), isophorone It may include one selected from the group consisting of diisocyanate (isoporone diisocyanate) and combinations thereof.

The second polyol compound is, for example, a group consisting of polyether polyol, polyester polyol, polycarbonate polyol, acryl polyol, and combinations thereof. It may include one selected from. The term ‘polyol’ refers to a compound containing at least two hydroxy groups (-OH) per molecule. In one embodiment, the second polyol compound may include a dihydric alcohol compound having two hydroxy groups, that is, diol or glycol. In one embodiment, the second polyol compound may include a polyether-based polyol.

The second polyol compound is, for example, polytetramethylene ether glycol (PTMG), polypropylene ether glycol, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,2-butanediol, 1,3 -Butanediol, 2-methyl-1,3-propanediol, 1,4-butanediol, neopentyl glycol, 1,5-pentanediol, 3-methyl-1,5-pentanediol, 1,6-hexanediol, diol It may include one selected from the group consisting of ethylene glycol (DEG), dipropylene glycol (DPG), tripropylene glycol, polypropylene glycol (PPG), and combinations thereof.

In one embodiment, the second polyol compound is a low molecular weight polyol having a weight average molecular weight (Mw) of about 100 g/mol or more and less than about 300 g/mol and a weight average molecular weight (Mw) of about 300 g/mol or more and about 1800 g/mol. It may contain the following high molecular weight polyol. By using an appropriate mixture of the low molecular weight polyol and the high molecular weight polyol having a weight average molecular weight in the above range as the second polyol compound, a foamed cured product having an appropriate crosslinked structure can be formed from the second urethane-based prepolymer, It may be more advantageous for the polishing layer 10 to form a foam structure having desired physical properties such as hardness and pores of an appropriate size.

The weight average molecular weight (Mw) of the second urethane-based prepolymer may be about 500 g/mol to about 3,000 g/mol, for example, about 600 g/mol to about 2,000 g/mol, for example, about It may be from 800 g/mol to about 1,000 g/mol. Since the second urethane-based prepolymer has a degree of polymerization corresponding to the weight average molecular weight (Mw) in the above-described range, the polishing layer composition is foamed and cured under predetermined process conditions to have an appropriate mutual surface hardness relationship with the uppermost surface of the window 102. It may be more advantageous to form a polishing layer 10 having a polishing surface, and through this, polishing progresses smoothly over the polishing surface and the entire uppermost end surface of the window 102, thereby improving the window 102 and the window 102. It may also be advantageous in terms of preventing water leakage through the interface between the polishing layers 10.

In one embodiment, the second isocyanate compound may include aromatic diisocyanate and alicyclic diisocyanate. The aromatic diisocyanate may include, for example, 2,4-toluene diisocyanate (2,4-TDI) and 2,6-toluene diisocyanate (2,6-TDI), and the cycloaliphatic diisocyanate may include It may include dicyclohexylmethane diisocyanate (H ₁₂ MDI). Additionally, the second polyol compound may include, for example, polytetramethylene ether glycol (PTMG) and diethylene glycol (DEG).

In the polishing layer composition, the total amount of the second polyol compound may be about 100 parts by weight to about 250 parts by weight, based on 100 parts by weight of the second isocyanate compound in all components for producing the second urethane-based prepolymer, For example, it may be about 110 parts by weight to about 250 parts by weight, for example, it may be about 110 parts by weight to about 240 parts by weight, for example, it may be about 110 parts by weight to about 200 parts by weight, for example For example, it may be about 110 parts by weight to about 180 parts by weight, for example, about 110 parts by weight or more and less than about 150 parts by weight.

In the polishing layer composition, the second isocyanate compound includes the aromatic diisocyanate, the aromatic diisocyanate includes 2,4-TDI and 2,6-TDI, and the content of 2,6-TDI is It may be about 1 part by weight to about 40 parts by weight, for example, about 1 part by weight to about 30 parts by weight, for example, about 10 parts by weight to about 30 parts by weight, relative to 100 parts by weight of 2,4-TDI. It may be parts by weight, for example, about 15 parts by weight to about 30 parts by weight.

In the polishing layer composition, the second isocyanate compound includes the aromatic diisocyanate and the cycloaliphatic diisocyanate, and the total content of the cycloaliphatic diisocyanate is about 5 parts by weight compared to 100 parts by weight of the total content of the aromatic diisocyanate. It may be from about 30 parts by weight, for example, from about 5 parts by weight to about 25 parts by weight, for example, from about 5 parts by weight to about 20 parts by weight, for example, from about 5 parts by weight or more. , may be less than about 15 parts by weight.

When the relative content ratio of each component of the polishing layer composition satisfies the above-mentioned range individually or simultaneously, the polished surface of the polishing layer 10 manufactured therefrom can have an appropriate pore structure and surface hardness. Accordingly, the polished surface of the polishing layer 10 can form an appropriate mutual surface hardness relationship with the uppermost surface of the window 102 in which the relative content ratios of each component satisfy the above-described conditions, respectively or simultaneously, and as a result, , it can be advantageous in terms of preventing water leakage through the interface between the window 102 and the polishing layer 10 because the polishing process progresses smoothly across the polishing surface and the entire uppermost surface of the window 102.

The polishing layer composition may have an isocyanate group content (NCO%) of about 6% by weight to about 12% by weight, for example, about 6% by weight to about 10% by weight, for example, about 6% by weight. % to about 9% by weight. The isocyanate group content refers to the percentage by weight of the isocyanate group (-NCO) that is not reacted with urethane and exists as a free reactor in the total weight of the preliminary composition. The isocyanate group content includes the type and content of the second isocyanate compound and the second polyol compound for producing the second urethane-based prepolymer, conditions such as temperature, pressure, and time in the process for producing the second urethane-based prepolymer, and It can be designed by comprehensively controlling the types and contents of additives used in the production of the second urethane-based prepolymer. When the isocyanate group content of the polishing layer composition satisfies the above range, the polishing layer composition foams and hardens under predetermined process conditions to produce a polishing layer ( 10), it may be more advantageous to form a surface, and through this, polishing that progresses across the polishing surface and the entire uppermost surface of the window 102 is smooth, thereby forming an interface between the window 102 and the polishing layer 10. It can also be advantageous in terms of preventing water leakage.

The polishing layer composition may further include a hardener. The curing agent is a compound for chemically reacting with the second urethane-based prepolymer to form a final cured structure in the polishing layer, and may include, for example, an amine compound or an alcohol compound. Specifically, the curing agent may include one selected from the group consisting of aromatic amine, aliphatic amine, aromatic alcohol, aliphatic alcohol, and combinations thereof.

The curing agent is, for example, 4,4'-methylenebis(2-chloroaniline) (4,4'-methylenebis(2-chloroaniline); MOCA), diethyltoluenediamine (DETDA), and diaminodiphenyl. Methane (diaminodiphenylmethane), dimethyl thio-toluene diamine (DMTDA), propanediol bis p-aminobenzoate, Methylene bis-methylanthranilate, diaminodiphenylsulfone, m -Xylylenediamine (m-xylylenediamine), isophoronediamine, ethylenediamine, diethylenetriamine, triethylenetetramine, polypropylenediamine, polypropylenetriamine It may include one selected from the group consisting of polypropylenetriamine, bis(4-amino-3-chlorophenyl)methane, and combinations thereof.

The content of the hardener may be about 18 parts by weight to about 28 parts by weight, for example, about 19 parts by weight to about 27 parts by weight, for example, about 20 parts by weight, based on 100 parts by weight of the polishing layer composition. It may be from about 26 parts by weight.

In one embodiment, the curing agent may include an amine compound, and the molar ratio of the isocyanate group (-NCO) in the polishing layer composition to the amine group (-NH ₂ ) in the curing agent is about 1:0.60 to about 1:0.99. It may be, for example, about 1:0.60 to about 1:0.95.

The polishing layer composition may further include a foaming agent. The foaming agent is an ingredient for forming the pore structure in the polishing layer and may include one selected from the group consisting of a solid foaming agent, a gaseous foaming agent, a liquid foaming agent, and a combination thereof. In one embodiment, the foaming agent may include a solid foaming agent, a gas phase foaming agent, or a combination thereof.

The average particle diameter of the solid foaming agent is about 5 μm to about 200 μm, for example, about 20 μm to about 50 μm, for example, about 21 μm to about 50 μm, for example, about 21 μm to about 40 μm. It can be. The average particle diameter of the solid foaming agent refers to the average particle diameter of the thermally expanded particles themselves when the solid foaming agent is thermally expanded particles as described later, and when the solid foaming agent is an unexpanded particle as described later. In this case, it may mean the average particle diameter of particles after expansion by heat or pressure.

The solid foaming agent may include expandable particles. The expandable particles are particles that can expand due to heat or pressure, and their size in the final polishing layer can be determined by the heat or pressure applied in the process of manufacturing the polishing layer. The expandable particles may include thermally expanded particles, unexpanded particles, or a combination thereof. The thermally expanded particles are particles pre-expanded by heat, and refer to particles that have little or no change in size due to heat or pressure applied during the manufacturing process of the polishing layer. The unexpanded particles refer to particles that have not been pre-expanded and whose final size is determined by expansion by heat or pressure applied during the manufacturing process of the polishing layer.

The expandable particles include an outer shell made of resin; And it may include an expansion-inducing ingredient present inside the shell.

For example, the outer shell may include a thermoplastic resin, and the thermoplastic resin is one selected from the group consisting of vinylidene chloride-based copolymer, acrylonitrile-based copolymer, methacrylonitrile-based copolymer, and acrylic copolymer. There may be more than one species.

The swelling-inducing component may include one selected from the group consisting of hydrocarbon compounds, chlorofluoro compounds, tetraalkylsilane compounds, and combinations thereof.

Specifically, the hydrocarbon compounds include ethane, ethylene, propane, propene, n-butane, isobutene, n-butene, Isobutene, n-pentane, isopentane, neopentane, n-hexane, heptane, petroleum ether and their It may include one selected from the group consisting of combinations.

The chlorofluoro compounds include trichlorofluoromethane (CCl ₃ F), dichlorodifluoromethane (CCl ₂ F ₂ ), chlorotrifluoromethane (CClF ₃ ), and tetrafluoroethylene ( It may include one selected from the group consisting of tetrafluoroethylene, CClF ₂ -CClF ₂ ), and combinations thereof.

The tetraalkylsilane compound is selected from the group consisting of tetramethylsilane, trimethylethylsilane, trimethylisopropylsilane, trimethyl-n-propylsilane, and combinations thereof. It can contain one.

The solid foaming agent may optionally include particles treated with inorganic components. For example, the solid foaming agent may include expandable particles treated with inorganic ingredients. In one embodiment, the solid foaming agent may include expandable particles treated with silica (SiO ₂ ) particles. Treatment of the inorganic components of the solid foaming agent can prevent aggregation between a plurality of particles. The solid foaming agent treated with inorganic components may have different surface chemical, electrical, and/or physical properties from the solid foaming agent that has not been treated with inorganic components.

The content of the solid foaming agent is about 0.5 parts by weight to about 10 parts by weight, for example, about 1 part by weight to about 3 parts by weight, for example, about 1.3 parts by weight to about 2.7 parts by weight, based on 100 parts by weight of the urethane-based prepolymer. parts, for example, from about 1.3 parts by weight to about 2.6 parts by weight.

The type and content of the solid foaming agent can be designed according to the desired pore structure and physical properties of the polishing layer.

The vapor phase foaming agent may include an inert gas. The vapor phase foaming agent may be added during the reaction of the second urethane-based prepolymer and the curing agent and used as a pore forming element.

The type of the inert gas is not particularly limited as long as it is a gas that does not participate in the reaction between the second urethane-based prepolymer and the curing agent. For example, the inert gas may include one selected from the group consisting of nitrogen gas (N ₂ ), argon gas (Ar), helium gas (He), and combinations thereof. Specifically, the inert gas may include nitrogen gas (N ₂ ) or argon gas (Ar).

The type and content of the gaseous foaming agent can be designed according to the desired pore structure and physical properties of the polishing layer.

In one embodiment, the foaming agent may include a solid foaming agent. For example, the foaming agent may be composed of only a solid foaming agent.

The solid foaming agent may include expandable particles, and the expandable particles may include thermally expanded particles. For example, the solid foaming agent may consist only of thermally expanded particles. When it consists only of thermally expanded particles and does not include the unexpanded particles, the variability of the pore structure decreases, but the possibility of predictability increases, which may be advantageous in realizing homogeneous pore characteristics throughout the entire area of the polishing layer.

In one embodiment, the thermally expanded particles may have an average particle diameter of about 5㎛ to about 200㎛. The average particle diameter of the thermally expanded particles is from about 5 μm to about 100 μm, for example from about 10 μm to about 80 μm, for example from about 20 μm to about 70 μm, for example from about 20 μm to about 50 μm. μm, for example from about 30 μm to about 70 μm, for example from about 25 μm to about 45 μm, for example from about 40 μm to about 70 μm, for example from about 40 μm to about 60 μm. there is. The average particle diameter is defined as D50 of the thermally expanded particles.

In one embodiment, the density of the thermally expanded particles is from about 30 kg/m to about 80 kg/m, such as from about 35 kg/m to about 80 kg/m, such as from about 35 kg/m to about 75 kg/m, For example, it may be from about 38 kg/m 3 to about 72 kg/m 3, for example from about 40 kg/m 3 to about 75 kg/m 3, for example from about 40 kg/m 3 to about 72 kg/m 3.

In one embodiment, the foaming agent may include a vapor phase foaming agent. For example, the foaming agent may include a solid foaming agent and a gas phase foaming agent. Details regarding the solid foaming agent are as described above.

The vapor phase foaming agent may be injected through a predetermined injection line during the process of mixing the second urethane-based prepolymer, the solid foaming agent, and the curing agent. The injection rate of the gaseous blowing agent is from about 0.8 L/min to about 2.0 L/min, for example from about 0.8 L/min to about 1.8 L/min, for example from about 0.8 L/min to about 1.7 L/min. , for example from about 1.0 L/min to about 2.0 L/min, for example from about 1.0 L/min to about 1.8 L/min, for example from about 1.0 L/min to about 1.7 L/min. there is.

The polishing layer composition may further include additives as needed. The type of additive may include one selected from the group consisting of surfactants, pH adjusters, binders, antioxidants, heat stabilizers, dispersion stabilizers, and combinations thereof. The names such as 'surfactant' and 'antioxidant' are arbitrary names based on the main role of the substance, and each substance does not necessarily perform only the functions limited to the role under the name.

The surfactant is not particularly limited as long as it is a substance that prevents phenomena such as agglomeration or overlap of pores. For example, the surfactant may include a silicone-based surfactant.

The surfactant may be used in an amount of about 0.2 parts by weight to about 2 parts by weight based on 100 parts by weight of the second urethane-based prepolymer. Specifically, the surfactant is present in an amount of about 0.2 parts by weight to about 1.9 parts by weight, for example, about 0.2 parts by weight to about 1.8 parts by weight, for example, about 0.2 parts by weight, based on 100 parts by weight of the second urethane-based prepolymer. It may be included in an amount of about 1.7 parts by weight, for example, about 0.2 parts by weight to about 1.6 parts by weight, for example, about 0.2 parts by weight to about 1.5 parts by weight, for example, about 0.5 parts by weight to 1.5 parts by weight. . When the surfactant is included in an amount within the above range, pores derived from the gaseous foaming agent can be stably formed and maintained within the mold.

The reaction rate regulator serves to promote or delay the reaction, and may be used as a reaction accelerator, a reaction retardant, or both depending on the purpose. The reaction rate control agent may include a reaction accelerator. For example, the reaction accelerator may be one or more reaction accelerators selected from the group consisting of tertiary amine compounds and organometallic compounds.

Specifically, the reaction rate regulator is triethylenediamine, dimethylethanolamine, tetramethylbutanediamine, 2-methyl-triethylenediamine, dimethylcyclohexylamine, triethylamine, triisopropanolamine, 1,4-diazabicyclo( 2,2,2)octane, bis(2-methylaminoethyl) ether, trimethylaminoethylethanolamine, N,N,N,N,N''-pentamethyldiethylenetriamine, dimethylaminoethylamine, dimethylamino Propylamine, benzyldimethylamine, N-ethylmorpholine, N,N-dimethylaminoethylmorpholine, N,N-dimethylcyclohexylamine, 2-methyl-2-azanobornene, dibutyltin dilaurate, Contains at least one member selected from the group consisting of stannous octoate, dibutyltin diacetate, dioctyltin diacetate, dibutyltin maleate, dibutyltin di-2-ethylhexanoate, and dibutyltin dimercaptide. can do. Specifically, the reaction rate regulator may include one or more selected from the group consisting of benzyldimethylamine, N,N-dimethylcyclohexylamine, and triethylamine.

The reaction rate control agent is present in an amount of about 0.05 parts by weight to about 2 parts by weight, for example, about 0.05 parts by weight to about 1.8 parts by weight, for example, about 0.05 parts by weight to about 1.7 parts by weight, based on 100 parts by weight of the second urethane-based prepolymer. parts by weight, such as about 0.05 parts by weight to about 1.6 parts by weight, such as about 0.1 parts by weight to about 1.5 parts by weight, such as about 0.1 parts by weight to about 0.3 parts by weight, such as about 0.2 parts by weight to about 1.8 parts by weight, such as about 0.2 parts by weight to about 1.7 parts by weight, such as about 0.2 parts by weight to about 1.6 parts by weight, such as about 0.2 parts by weight to about 1.5 parts by weight. , for example, can be used in an amount of about 0.5 parts by weight to about 1 part by weight. When the reaction rate control agent is used in the above-described content range, the curing reaction rate of the preliminary composition can be appropriately adjusted to form a polishing layer having pores of a desired size and hardness.

In one embodiment, the density of the polishing layer 10 is about 0.50 g/cm3 to about 1.20 g/cm3, such as about 0.50 g/cm3 to about 1.10 g/cm3, such as about 0.50 g/cm3. cm3 to about 1.00 g/cm3, such as about 0.60 g/cm3 to about 0.90 g/cm3, such as about 0.70 g/cm3 to about 0.90 g/cm3. The polishing layer 10, whose density satisfies the above range, can provide a polishing surface with mechanical properties appropriate for the polishing object through its polishing surface, and as a result, while realizing excellent polishing flatness of the surface to be polished, This can be advantageous in effectively preventing the occurrence of defects such as scratches. In addition, the physical properties of the polishing layer 10 are excellent in compatibility with the mechanical and physical properties of the window 102, thereby minimizing the occurrence of leaks between the polishing layer 10 and the window 102. It may be more advantageous in terms of prevention.

In one embodiment, the tensile strength of the polishing layer 10 is about 15 N/mm2 to about 30 N/mm2, for example, about 15 N/mm2 to about 28 N/mm2, for example. , may be from about 15 N/mm2 to about 27 N/mm2, for example from about 17 N/mm2 to about 27 N/mm2, for example from about 20 N/mm2 to about 27 N/mm2. The tensile strength was measured by processing the polishing layer to a thickness of 2 mm, cutting the horizontal and vertical dimensions into 4 cm It was derived by measuring the highest intensity value. The polishing layer 10, whose tensile strength satisfies the above range, can provide a polishing surface with mechanical properties appropriate for the polishing target through its polishing surface, and as a result, excellent polishing flatness of the surface to be polished is achieved. , it can be advantageous to effectively prevent the occurrence of defects such as scratches. In addition, the physical properties of the polishing layer 10 are excellent in compatibility with the mechanical and physical properties of the window 102, thereby minimizing the occurrence of leaks between the polishing layer 10 and the window 102. It may be more advantageous in terms of prevention.

In one embodiment, the elongation of the polishing layer 10 may be about 100% or more, for example, about 100% to about 200%, for example, about 110% to about 160%. . The elongation was determined by processing the polishing layer to a thickness of 2 mm, cutting the horizontal and vertical dimensions into 4 cm After measuring the maximum deformed length, it was derived by expressing the ratio of the maximum deformed length to the initial length as a percentage (%). The polishing layer 10, whose elongation satisfies the above range, can provide a polishing surface with mechanical properties appropriate for the polishing target through its polishing surface, and as a result, achieves excellent polishing flatness of the surface to be polished, This can be advantageous in effectively preventing the occurrence of defects such as scratches. In addition, the physical properties of the polishing layer 10 are excellent in compatibility with the mechanical and physical properties of the window 102, thereby minimizing the occurrence of leaks between the polishing layer 10 and the window 102. It may be more advantageous in terms of prevention.

As described above, the support layer 20 provides an improved water leak prevention function to the polishing pad 100 by including the compressed portion (CR), and at the same time, the support layer 20 provides an improved water leak prevention function to the polishing pad 100 through the non-compressed portion (NCR). It can serve as a buffer to relieve external pressure or external shock that may be transmitted to the surface.

The support layer 20 may include non-woven fabric or suede, but is not limited thereto. In one embodiment, the support layer 20 may include non-woven fabric. The ‘non-woven fabric’ refers to a three-dimensional network structure of non-woven fibers. Specifically, the support layer 20 may include a non-woven fabric and a resin impregnated with the non-woven fabric.

The nonwoven fabric may be, for example, a nonwoven fabric of fibers including one selected from the group consisting of polyester fibers, polyamide fibers, polypropylene fibers, polyethylene fibers, and combinations thereof.

The resin impregnated in the nonwoven fabric is, for example, polyurethane resin, polybutadiene resin, styrene-butadiene copolymer resin, styrene-butadiene-styrene copolymer resin, acrylonitrile-butadiene copolymer resin, styrene-ethylene-butadiene-styrene copolymerization. It may include one selected from the group consisting of resin, silicone rubber resin, polyester-based elastomer resin, polyamide-based elastomer resin, and combinations thereof.

In one embodiment, the support layer 20 may include a nonwoven fabric of fibers including polyester fibers impregnated with a resin including a polyurethane resin. In this case, in the area near where the window 30 is disposed, the supporting performance of the support layer 20 for the window 30 can be excellently implemented, and the residue carrying function by the gap 15 can be implemented. Therefore, it may be advantageous to safely support the residue supported on the uppermost surface of the support layer 20 without leaking out.

The thickness of the support layer 20 is, for example, about 0.5 mm to about 2.5 mm, such as about 0.8 mm to about 2.5 mm, such as about 1.0 mm to about 2.5 mm, such as about 1.0 mm. mm to about 2.0 mm, for example, about 1.2 mm to about 1.8 mm. Referring to FIG. 2, the thickness of the support layer 20 may be the thickness H1 of the non-compressed portion (NCR).

The Asker C hardness of the surface of the support layer 20, for example, the third side 21, may be about 60 to about 80, for example, about 65 to about 80. Since the surface hardness on the third surface 21 satisfies the above range with Asker C hardness, sufficient support rigidity for supporting the polishing layer 10 can be secured, and the support rigidity for supporting the polishing layer 10 can be secured through the second adhesive layer 40. It can exhibit excellent interfacial adhesion with the second surface 21.

The density of the support layer 20 is from about 0.10 g/cm3 to about 1.00 g/cm3, for example from about 0.10 g/cm3 to about 0.80 g/cm3, for example from about 0.10 g/cm3 to about 0.70 g/cm3. cm3, for example from about 0.10 g/cm3 to about 0.60 g/cm3, for example from about 0.10 g/cm3 to about 0.50 g/cm3, for example from about 0.20 g/cm3 to about 0.40 g/cm3 day. You can. The support layer 20, whose density satisfies the above range, may have an excellent cushioning effect based on the high elasticity of the non-compressed portion (NCR), and the compressed portion (CR) has a predetermined size compared to the non-compressed portion (NCR). It may be more advantageous to form a high-density region by being compressed at a compression rate.

The compressibility of the support layer 20 is from about 1% to about 20%, for example from about 3% to about 15%, for example from about 5% to about 15%, for example from about 6% to about 14%. It may be %. The compression rate is determined by cutting the support layer into 5cm x 5cm (thickness: 2mm) and measuring the thickness of the cushion layer when a stress load of 85g is maintained for 30 seconds from an unloaded state, and this is referred to as T1 (mm). , Measure the thickness of the support layer when a stress load of 800g is additionally applied from the T1 state and maintained for 3 minutes, and this is referred to as T2 (mm), and the compression ratio is calculated according to the formula of (T1-T2)/T1*100. was calculated. As the support layer 20 satisfies the compression ratio measured under the above conditions within the above-described range, it may be more advantageous for the compression portion CR to form a high-density area effective in preventing water leakage.

The compressive elastic modulus of the support layer 20 may be about 60% to about 95%, for example, about 70% to about 95%, for example, about 70% to about 92%. The compressive modulus of elasticity is determined by cutting the support layer into 5cm x 5cm (thickness: 2mm) and measuring the thickness of the cushion layer when a stress load of 85g is maintained for 30 seconds from an unloaded state, which is referred to as T1 (mm). The thickness of the support layer was measured when a stress load of 800 g was additionally applied from the T1 state and maintained for 3 minutes, and this was referred to as T2 (mm). Then, the stress load of 800 g was removed from the T2 state and a stress load of 85 g was applied. When the thickness of the support layer when restored while maintaining the stress load for 1 minute was set to T3, the compressive modulus was calculated according to the equation (T3-T2)/(T1-T2)*100. As the support layer 20 satisfies the compressive elastic modulus measured under the above conditions within the above-mentioned range, it may be more advantageous for the compression portion CR to form a high-density area effective in preventing water leakage, and at the same time, the support layer 20 The elasticity of may be more advantageous in terms of preventing defects on the surface to be polished and improving polishing flatness.

The polishing pads 100, 100', and 200 according to one embodiment may have an air leak value of less than about 1×10 ^-2 cc/min (0.001=1 mbar), for example, about 1 It may be less than 10 ^-3 cc/min (0.001=1 mbar). Figure 7 schematically shows the air leak measurement process of the polishing pad. Referring to FIG. 7, the air leakage value is determined by placing and sealing a holder (300) in the area corresponding to the outer circumference of the window on the lower surface of the support layer with respect to the polishing pad, and then depressurizing the polishing pad under the condition of -1 bar for 5 seconds. This was derived by maintaining the reduced pressure for 10 seconds to stabilize it and then measuring the amount of pressure change.

In another embodiment of the present invention, it includes a first surface that is a polishing surface and a second surface that is the rear surface of the polishing surface, and a first through hole penetrating from the first surface to the second surface, and the first through hole Providing a polishing pad with a polishing layer including a window disposed therein; and placing the polishing target on the first surface so that the surface to be polished is in contact with the polishing target and then polishing the polishing target while rotating the polishing pad and the polishing target relative to each other under pressure conditions, wherein the polishing target is It includes a semiconductor substrate, wherein the polishing pad further includes a support layer disposed on the second side of the polishing layer, and the support layer includes a third side on the polishing layer side and a fourth side behind the polishing layer, It includes a second through hole passing from the third surface to the fourth surface and connected to the first through hole, wherein the second through hole is smaller than the first through hole, and the lowest end surface of the window is the third through hole. supported by a surface, comprising a first adhesive layer between the lowermost end surface of the window and the third surface, and between the second surface and the third surface; and a second adhesive layer between the lowermost end surface of the window and the third surface, wherein the support layer includes a compression portion in a region corresponding to the lowermost end surface of the window.

In the method of manufacturing the semiconductor device, all matters related to the polishing pad are not only described repeatedly below, but even if not repeatedly described below, all matters described for the description of the above-described embodiments and their technical advantages are equally integrated hereinafter. It can be applied. By applying the polishing pad having the above-described characteristics to the semiconductor device manufacturing method, the semiconductor device manufactured through this method can secure high quality based on excellent polishing results of the semiconductor substrate.

Figure 8 is a schematic diagram schematically showing a method of manufacturing the semiconductor device according to an embodiment. Referring to FIG. 8, the polishing pad 100 may be provided on the surface plate 120. 2 and 8, the polishing pad 100 is provided on the surface plate 120 so that the second surface 12 of the polishing layer 10 faces the surface plate 120. You can. Explained from another perspective, the polishing pad 100 may be placed on the surface plate 120 so that the first surface 11, which is the uppermost end surface and polishing surface of the window 120, is exposed as the outermost surface. .

The polishing object includes a semiconductor substrate 130. The semiconductor substrate 130 may be disposed so that its polished surface contacts the first surface 11 and the top end surface of the window 102. The surface to be polished of the semiconductor substrate 130 may directly contact the first surface 11 and the top end surface of the window 102, or may contact indirectly through a fluid slurry or the like. In this specification, 'contact' is interpreted to include all cases of direct or indirect contact.

The semiconductor substrate 130 is mounted on the polishing head 160 so that the surface to be polished faces the polishing pad 100 and is pressed with a predetermined load to form the first surface 11 and the window 102. It can be rotary polished in contact with the top end surface. The load with which the surface to be polished of the semiconductor substrate 130 is pressed against the first surface 11 may be selected depending on the purpose, for example, in the range of about 0.01 psi to about 20 psi, for example, about 0.1 psi. It may be from psi to about 15 psi, but is not limited thereto. The surface to be polished of the semiconductor substrate 130 is rotated and polished while coming into contact with the uppermost end surface of the first surface 11 and the window 102 with a load in the above-described range, thereby forming the first surface 11 and the uppermost surface of the window 102. In the process of repeatedly moving back and forth between the uppermost surfaces of the window 102, it may be more advantageous in terms of securing the effect of preventing water leakage through the interface between them.

The semiconductor substrate 130 and the polishing pad 100 may rotate relative to each other while their respective polishing surfaces are in contact with each other. At this time, the rotation direction of the semiconductor substrate 130 and the rotation direction of the polishing pad 100 may be in the same direction or in opposite directions. In this specification, 'relative rotation' is interpreted to include both rotation in the same direction or rotation in opposite directions. The polishing pad 100 is mounted on the surface plate 120 and rotates as the surface plate 120 rotates, and the semiconductor substrate 130 is mounted on the polishing head 160. It rotates as the polishing head 160 rotates. The rotation speed of the polishing pad 100 may be selected depending on the purpose in the range of about 10 rpm to about 500 rpm, for example, about 30 rpm to about 200 rpm, but is not limited thereto. The rotation speed of the semiconductor substrate 130 is about 10 rpm to about 500 rpm, for example, about 30 rpm to about 200 rpm, for example, about 50 rpm to about 150 rpm, for example, about 50 rpm to about 100 rpm, for example, It may be about 50 rpm to about 90 rpm, but is not limited thereto. As the rotation speed of the semiconductor substrate 130 and the polishing pad 100 satisfies the above range, the fluidity of the slurry due to its centrifugal force is maintained at the interface between the uppermost surface of the window 102 and the first surface 11. It can be appropriately secured in relation to the water leakage prevention effect. That is, the polishing slurry moves on the first surface 11 and the uppermost surface of the window 102 at an appropriate flow rate, thereby flowing through the interface between the uppermost surface of the window 102 and the first surface 11. The leakage amount of the polishing slurry is limited to the water leak prevention effect of the polishing pad 100 having the multi-stage adhesive layer structure of the first adhesive layer 30 and the second adhesive layer 40 and the compressed portion structure of the support layer 20. It can be more advantageous in terms of maximizing .

The method of manufacturing the semiconductor device may further include supplying a polishing slurry 150 on the first surface 11. For example, the polishing slurry 150 may be sprayed onto the first surface 11 through the supply nozzle 140. The flow rate of the polishing slurry 150 sprayed through the supply nozzle 140 may be, for example, about 10 ml/min to about 1,000 ml/min, for example, about 10 ml/min to about 800 ml/min. It may be, for example, about 50ml/min to about 500ml/min, but is not limited thereto. When the spray flow rate of the polishing slurry 150 satisfies the above range, the polishing slurry moves on the first surface 11 and the uppermost end surface of the window 102 at an appropriate flow rate, thereby forming the uppermost end surface of the window 102. The amount of polishing slurry leaking through the interface between the first surface 11 is the same as the multi-stage adhesive layer structure of the first adhesive layer 30 and the second adhesive layer 40 and the compressed portion structure of the support layer 20. This may be more advantageous in terms of maximizing the water leak prevention effect of the polishing pad 100 provided.

The polishing slurry 150 may include abrasive particles, and the abrasive particles may include, for example, silica particles or ceria particles, but are not limited thereto.

The method of manufacturing the semiconductor device may further include processing the first surface 11 using a conditioner 170. Processing the first surface 11 using the conditioner 170 may be performed simultaneously with polishing the semiconductor substrate 130.

The conditioner 170 may process the first surface 11 while rotating. The rotation speed of the conditioner 170 may be, for example, about 50 rpm to about 150 rpm, for example, about 50 rpm to about 120 rpm, for example, about 90 rpm to about 120 rpm.

The conditioner 170 may process the first surface 11 while being pressed against the first surface 11 . The pressing load on the first surface 11 of the conditioner 170 may be, for example, about 1 lb to about 10 lb, for example, about 3 lb to about 9 lb.

The conditioner 170 may process the first surface 11 while vibrating in a path that travels from the center of the polishing pad 100 to the end of the polishing pad 100. When the vibration movement of the conditioner 170 is calculated as one round trip from the center of the polishing pad 100 to the end of the polishing pad 100, the vibration movement speed of the conditioner 170 is about 10 times/ minutes (min) to about 30 times/min, for example, about 10 times/min to about 25 times/min, for example, about 15 times/min to about 25 times/min.

Since the first surface 11, which is a polishing surface, is polished under conditions in which the semiconductor substrate 130 is pressed against the polishing surface while polishing is in progress, the pore structure exposed on the surface is pressed and the surface roughness is lowered. It gradually changes to a state that is unsuitable for it. To prevent this, the first surface 11 can be maintained in a surface state suitable for polishing while cutting through the conditioner 170 having a surface capable of being roughened. At this time, if the cut portions of the first surface 11 are not discharged quickly and remain on the polished surface as debris, defects such as scratches may occur on the polished surface of the semiconductor substrate 130. It could be the cause. From this perspective, the operating conditions of the conditioner 170, that is, the rotation speed and pressurization conditions, etc. satisfy the above range, so that the surface structure of the first surface 11 has an excellent water leak prevention effect of the polishing pad 100. It can be maintained continuously, and at the same time, it can be advantageous in terms of securing a defect prevention effect on the surface to be polished of the semiconductor substrate 130.

The method of manufacturing the semiconductor device may further include detecting the polishing end point of the surface to be polished of the semiconductor substrate 130 by allowing light emitted from the light source 180 to pass through the window 102 in and out. Referring to FIGS. 2 and 8 , the second through hole 201 is connected to the first through hole 101 so that the light emitted from the light source 180 extends from the top end of the polishing pad 100. An optical path penetrating the entire thickness up to the lowest cross-section can be secured, and an optical endpoint detection method through the window 102 can be applied.

As described above, the polishing process using the polishing pad 100 is performed while supplying a fluid such as a liquid slurry to the first surface 11. At this time, the window 102 and the first surface ( Components derived from these fluids can flow between the interfaces in 11). When the transmitted fluid component passes through the second through hole 201 and flows into the bottom of the polishing pad 100 and the surface plate 120, it causes the light source 180 to be fixed or the window 102 to be damaged. There is a risk that moisture may accumulate on the bottom surface of the device, interfering with accurate end point detection. From this perspective, the polishing pad 100 forms the second through hole 201 smaller than the first through hole 101 to form a support surface of the window 102 on the third surface 21. At the same time, a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 is formed on the support surface, and a multi-stage adhesive layer including the first adhesive layer 30 and the second adhesive layer 40 is formed on the support layer 20 in a region corresponding to the lowermost cross section of the window 102. By providing a compression portion (CR), it effectively prevents fluid components derived from the polishing slurry 150 from flowing into the bottom of the surface plate 120 or causing moisture to accumulate on the lowest end surface of the window 102. can do.

Below, specific embodiments of the present invention are presented. However, the examples described below are only for illustrating or explaining the present invention in detail, and are not construed to limit the scope of the present invention, and the scope of the present invention is determined by the claims.

<Manufacturing example>

Preparation Example 1: Preparation of polishing layer composition

에서 반응시켜 우레탄계 프리폴리머를 포함하고 이소시아네이트기 함량(NCO%)이 9.3중량%인 연마층 조성물을 제조하였다.For a total of 100 parts by weight of diisocyanate ingredients, 72 parts by weight of 2,4-TDI, 18 parts by weight of 2,6-TDI, and 10 parts by weight of H ₁₂ MDI were mixed. 90 parts by weight of PTMG and 10 parts by weight of DEG were mixed for a total of 100 parts by weight of polyol components. A mixed raw material was prepared by mixing 148 parts by weight of the polyol component with a total of 100 parts by weight of the diisocyanate component. After adding the above mixed raw materials to a four-necked flask, 80

A polishing layer composition containing a urethane-based prepolymer and having an isocyanate group content (NCO%) of 9.3% by weight was prepared by reacting in .

Preparation Example 2: Preparation of window composition

에서 반응시켜 우레탄계 프리폴리머를 포함하고 이소시아네이트기 함량(NCO%)가 8중량%인 윈도우 조성물을 제조하였다.For a total of 100 parts by weight of diisocyanate ingredients, 64 parts by weight of 2,4-TDI, 16 parts by weight of 2,6-TDI, and 20 parts by weight of H ₁₂ MDI were mixed. 47 parts by weight of PTMG, 47 parts by weight of PPG, and 6 parts by weight of DEG were mixed for a total of 100 parts by weight of polyol components. A mixed raw material was prepared by mixing 180 parts by weight of the polyol component with a total of 100 parts by weight of the diisocyanate component. After adding the above mixed raw materials to the four-necked flask, 80

A window composition containing a urethane-based prepolymer and having an isocyanate group content (NCO%) of 8% by weight was prepared by reacting in .

<Examples and Comparative Examples>

Example 1

의 온도 조건 하에서 후경화 반응하여 연마층을 제조하였다. 상기 연마층을 2.03mm 두께로 선삭 가공하고, 연마면 상에 깊이 460㎛, 폭 0.85mm 및 피치 3.0mm의 동심원형 구조의 그루브를 가공하였다. 1.0 parts by weight of a solid foaming agent (Nouryon) was mixed with 100 parts by weight of the polishing layer composition of Preparation Example 1, and 4,4'-methylenebis(2-chloroaniline) (MOCA) was mixed as a curing agent, and the polishing layer The composition was mixed so that the molar ratio of the amine group (-NH ₂ ) of MOCA was 0.95 compared to the isocyanate group (-NCO) of 1.0. The polishing layer composition was injected into a mold with a width of 1,000 mm, a length of 1,000 mm, and a height of 3 mm, preheated to 90°C, at a discharge rate of 10 kg/min, and at the same time, 1.0 L of nitrogen (N ₂ ) gas as a gaseous foaming agent was added. The injection was performed at an injection rate of /min. Then, the preliminary composition was added to 110

A polishing layer was produced by post-curing reaction under temperature conditions. The polishing layer was turned to a thickness of 2.03 mm, and a concentric circular groove with a depth of 460 μm, a width of 0.85 mm, and a pitch of 3.0 mm was machined on the polished surface.

의 온도 조건 하에서 후경화 반응하여 윈도우를 제조하였다. 상기 윈도우는 각 두께가 하기 표 1을 만족하도록 제조되었고, 가로 및 세로가 각각 60mm 및 20mm가 되도록 제조되었다. 100 parts by weight of the window composition of Preparation Example 2 was mixed with 4,4'-methylenebis(2-chloroaniline) (MOCA) as a curing agent, and the ratio of MOCA to the isocyanate group (-NCO) in the polishing layer composition was 1.0. The mixture was mixed so that the molar ratio of the amine group (-NH ₂ ) was 0.95. The window composition was injected into a mold with a width of 1,000 mm, a length of 1,000 mm, and a height of 3 mm, preheated to 90°C, and at a discharge rate of 10 kg/min.

A window was manufactured by post-curing reaction under temperature conditions. The window was manufactured so that each thickness satisfied Table 1 below, and the width and height were 60 mm and 20 mm, respectively.

A support layer consisting of a nonwoven fabric containing polyester resin fibers impregnated with urethane resin and having a thickness of 1.4 mm was prepared.

A first through hole is formed to penetrate from the first surface, which is the polishing surface of the polishing layer, to the second surface, which is the rear surface, so that the horizontal (width) and vertical (length) of the first through hole are 20 mm and 60 mm, respectively. It was formed in a rectangular parallelepiped shape.

Next, an adhesive film containing a thermoplastic urethane-based adhesive is placed on one side (third side) of the support layer, and then laminated together so as to come into contact with the second side of the polishing layer, and then heat-sealed at 140°C using a pressure roller. By doing this, a second adhesive layer with a thickness of about 27 (±5) ㎛ was formed. Next, the support layer is cut from the lowest end surface to form a second through hole penetrating the support layer in the thickness direction, formed in a region corresponding to the first through hole and connected to each other, and the second through hole is formed. It was formed in a rectangular parallelepiped shape so that the width (width) and length (length) were 14 mm and 52 mm, respectively.

Referring to FIG. 2, since the second through hole 201 is formed smaller than the first through hole 101, the upper part of the second adhesive layer 40 exposed to the outside has the width W2 above. The part corresponding to the horizontal (width) of the window was 3 mm, and the part corresponding to the vertical (length) of the window was 4 mm. Herein, it contains about 97.75 (±1.25) weight% of a urethane-based prepolymer polymerized from a monomer component containing the aromatic diisocyanate and polyol of Formula 1 and about 2.25 (±1.25) weight% of unreacted aromatic diisocyanate of Formula 1. After applying the moisture-curable adhesive composition, it was aged for 2 hours. At this time, the moisture-curable adhesive composition was applied using a dispenser equipped with a supply nozzle with a diameter of 100㎛. Next, the window 102 is placed in the first through hole 101 so as to be supported by the surface on which the moisture-curable adhesive composition is applied, and is pressed for 1 second with a load of 100 N, and then pressed for an additional 10 seconds with a load of 900 N. did. As a result, the first adhesive layer 30 was manufactured where the width of the portion corresponding to the horizontal (width) of the window was 3 mm and the width of the portion corresponding to the vertical (length) of the window was 4 mm, and the uppermost end surface of the window and the first adhesive layer were manufactured. The level difference between one side was made to satisfy what is shown in Table 1 below.

At this time, it was manufactured so that the first adhesive layer was not disposed between the side of the window 102 and the side of the first through hole 101.

Next, the lowermost end surface (fourth surface) of the support layer 20 is pressed to form a compression portion (CR) in a predetermined area in the direction from the side of the second through hole 201 toward the inside of the support layer 20. formed. The thickness of the compression section (CR) was pressurized to 0.48 mm, and the width of the compression section (CR) was formed to be 7.5 mm.

As a result, a polishing pad with a total thickness of 3.4 mm was manufactured, including a multi-stage adhesive layer of the first adhesive layer 30 and the second adhesive layer on the lowermost cross-section side of the widow, and including a compression portion (CR) in the support layer. .

Examples 2 to 6

The thickness of the window is manufactured as shown in Table 1 below, the depth (d2) from the lowest cross section of the window satisfies Table 1 below, and the area of the plane of the window, that is, the horizontal (width) and vertical (length) The recess portion was manufactured to satisfy 13 mm and 30 mm, respectively. When placing the window on the first through hole, the pressing load is varied so that the step between the uppermost end surface of the window and the first surface satisfies Table 1 below. Referring to FIG. 3, the window A polishing pad was manufactured in the same manner as in Example 1, except that the first adhesive layer was present between the side and the side of the first through hole, and the length (L1) was manufactured to satisfy Table 1 below.

Comparative Example 1

The thickness of the window is manufactured as shown in Table 1 below, and when the window is placed on the first through hole, the second through hole 201 is formed by forming the first through hole (201) without applying the moisture-curable adhesive composition. The window 102 is placed directly on top of the second adhesive layer 40, which is exposed to the outside because it is formed smaller than 101), and then pressed to create a step between the uppermost end surface of the window 102 and the polished surface 11. The window 102 was placed in the first through hole 101 so as to satisfy Table 1 below.

In addition, as the second adhesive layer 40, instead of an adhesive film containing a thermoplastic polyurethane adhesive, an adhesive film containing a pressure sensitive adhesive (PSA, Pressure Sensitive Adhesive) was applied, and heat-sealed at 140°C using a pressure roller. The process was excluded.

In addition, the compression portion (CR) was not manufactured on the lower surface of the support layer 20.

Except for this, the polishing pad was manufactured in the same manner as in Example 1, excluding the first adhesive layer 30 and the compression portion (CR), as shown in (a) of FIG. 9. did.

Comparative Example 2

The thickness of the window is manufactured as shown in Table 1 below, and when the window is placed on the first through hole, the second through hole 201 is formed by forming the first through hole (201) without applying the moisture-curable adhesive composition. The window 102 is placed directly on top of the second adhesive layer 40, which is exposed to the outside because it is formed smaller than 101), and then pressed to create a step between the uppermost end surface of the window 102 and the polished surface 11. The window 102 was placed in the first through hole 101 so as to satisfy Table 1 below.

A compressed portion (CR) was manufactured on the lower surface of the support layer 20, and the width and thickness (H2) of the compressed portion (CR) in the corresponding area of the lowermost cross section of the window 102 were manufactured as shown in Table 1 below, and To distinguish it, an additional compressed portion (CR') was formed in the area corresponding to the outer circumference of the window 102 on the lower surface of the support layer 20, and its width and thickness were manufactured to be the same as the compressed portion (CR). . The compressed portion (CR) and the additional compressed portion (CR') were manufactured to be separated by a non-compressed portion (NCR).

Except for this, the polishing pad was manufactured in the same manner as in Example 1, except for the first adhesive layer 30, as shown in (b) of FIG. 9, and the compression portion CR and the additional compression portion were Polishing pads formed with different structures including (CR') were manufactured.

Comparative Example 3

The thickness of the window is manufactured as shown in Table 1 below, and in the process of placing the window, the polishing surface and the top end of the window are It was manufactured so that the level difference was substantially 0 (zero), and no compression portion (CR) was manufactured on the lower surface of the support layer 20.

Except for this, a polishing pad was manufactured in the same manner as in Example 1, excluding the compression portion (CR), as shown in (c) of FIG. 9.

Comparative Example 4

The thickness of the window is manufactured as shown in Table 1 below, and when the window is placed on the first through hole, the second through hole 201 is formed by forming the first through hole (201) without applying the moisture-curable adhesive composition. The window 102 is placed directly on top of the second adhesive layer 40, which is exposed to the outside because it is formed smaller than 101), and then pressed to create a step between the uppermost end surface of the window 102 and the polished surface 11. The window 102 was placed in the first through hole 101 so as to satisfy Table 1 below.

Except for this, a polishing pad was manufactured in the same manner as in Example 1, excluding the first adhesive layer 30, as shown in (d) of FIG. 9.

<Evaluation and measurement>

Measurement Example 1: Evaluation of polishing layer and window surface hardness

Samples were prepared by cutting the polishing layer of each of the above examples and comparative examples to a size of 3cmХ3cm in width and length, respectively. Samples were prepared by cutting the windows of each of the examples and comparative examples to a size of 3cmХ3cm in width and height, respectively. After storing the sample at 25°C for 12 hours, Shore D hardness was measured using a hardness meter to determine the surface hardness (S1, S2) in a dry state at room temperature. In addition, the window sample was immersed in water at a temperature of 30°C, water at a temperature of 50°C, and water at a temperature of 70°C for 30 minutes, and then the Shore D hardness was measured using a hardness meter to obtain wet hardness (S3) at 30°C, respectively. ), 50°C wet hardness (S4), and 70°C wet hardness (S5). The results are as shown in Table 1 below.

Measurement example 2: Water leak test

Each of the polishing pads of the examples and comparative examples was mounted on a surface of a polishing equipment (CTS AP300), a silicon wafer (TEOS wafer) was mounted on a polishing head, the rotation speed of the polishing head was 87 rpm, and the polishing head was operated at a rotation speed of 87 rpm. The groove of the polishing pad under a pressure load of 3.5 psi on the polishing pad, a rotation speed of the surface plate of 93 rpm, a distilled water (DI water) injection flow rate of 200 mL/min, a conditioner (CI 45) rotation speed of 101 rpm, and a conditioner vibration movement speed of 19 times/min. Polishing continued until it was worn out, and leaks were checked once every hour. Next, it was checked with the naked eye, and if condensation occurred on the bottom surface of the window or moisture accumulated on the table, it was evaluated as 'leakage', and if these phenomena did not occur at all, it was evaluated as 'good'. The water leak test results are shown in Table 1 below.

Measurement Example 3: Air Leak Test

Figure 7 schematically shows the air leak measurement process of the polishing pad. Referring to FIG. 7, the air leakage value is 5 under the condition of -1 bar after positioning and sealing a holder in the corresponding area around the outer perimeter of the window on the lower surface of the support layer for each polishing pad of the Examples and Comparative Examples. It was derived by decompressing for a second, maintaining the decompression condition for 10 seconds, stabilizing it, and then measuring the amount of pressure change. The results are as shown in Table 1 below.

item unit Example Comparative example One 2 3 4 5 6 One 2 3 4 Polishing pad total thickness mm 3.4 3.4 3.4 3.4 3.4 3.4 3.4 3.4 3.4 3.4 Polishing layer thickness (D1) mm 2.03 2.03 2.03 2.03 2.03 2.03 2.1 2.1 2.03 2.03 Window thickness (D2) mm 2.04 2.18 2.08 2.03 2.23 2.28 2.1 2.5 2.03 2.03 Recess depth (d2) mm 0 0 0.6 0.55 0.65 0.85 0 0.95 0 0 Polished surface-window top section step (d3) ㎛ 100 150 50 0 200 250 0 50 0 0 Second adhesive layer thickness ㎛ 27 27 27 27 27 27 27(PSA) 27 27 27 1st
adhesive layer Side length (L1) ㎛ 4 3 2 One 0 0 - - 0 - Width (W3) window width mm 3 3 3 3 3 3 - - 3 - window length mm 4 4 4 4 4 4 - - 4 - support group NCR Thickness (H1) mm 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 CR Width (CR) mm 7.5 7.5 7.5 7.5 7.5 7.5 - 3 - 7.5 Thickness (H2) mm 0.48 0.48 0.48 0.48 0.48 0.48 - 0.48 - 0.48 groove depth(d1) ㎛ 460 460 460 460 460 460 460 460 460 460 Width(w1) mm 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 0.85 pitch (p1) mm 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 3.0 Shore D
Hardness polished surface Room temperature drying (S1) - 56 56.3 55.7 55.9 56.8 56.2 56.8 57 57.5 57.4 window
top section Wet 30℃(S3) - 62.2 61.9 62 61.8 62.5 61.5 62.5 62.3 62.7 62.2 Wet 50℃(S4) - 57.3 57.1 56.3 56.9 57.5 56.5 57.5 57.7 57.6 57.2 Wet 70℃(S5) - 53.1 52.9 52.4 53 53.5 52.7 53.5 53.6 53.4 53.3 Room temperature drying (S2) - 62.2 61.8 61.5 62.4 62.5 61.7 62.5 62.7 62.5 62.6 |S1-S2| - 6.2 5.5 5.8 6.5 6 5.7 5.7 5.7 5 5.2 |S2-S3| - 0 0.1 0.5 0.6 0.1 0 0 0.4 0.2 0.4 |S2-S4| - 4.9 4.7 5.2 5.5 5 5 5 5 4.9 5.4 |S2-S5| - 9.1 8.9 9.1 9.4 9.2 9 9 9.1 9.1 9.3 water leak test - Good Good Good Good Good Good water leak water leak water leak water leak Air Leak cc/min 1.4 ×
10 ^-4 1.3 ×
10 ^-4 2.2 ×
10 ^-4 3.4 ×
10 ^-4 2.4 ×
10 ^-4 1.2 ×
10 ^-4 measurement
Impossible 2.1 ×
10 ^-2 3.4 ×
10 ^-1 2.8 ×
10 ^-2

Referring to the results in Table 1, in the case of the polishing pads of Examples 1 to 6, the lowermost end surface of the window was supported by the third surface of the support layer, and the lowermost end surface of the window and the third surface of the support layer It has a multi-stage adhesive layer of the first adhesive layer and the third adhesive layer between them, and at the same time, the support layer has a compression portion on the corresponding area of the lowermost cross-section above the window, so that the pressure is less than 10 ^-2 cc/min, more specifically, 10 ^-3 cc. It was confirmed that the air leak value was less than /min and that it showed excellent leak test results. In contrast, the polishing pad of Comparative Example 1 is a polishing pad that does not have a multi-stage adhesive layer structure on the lowest end of the window and does not have a compressed portion of the support layer, resulting in severe water leakage as a result of a water leak test, and under reduced pressure conditions in air leak measurement. It was confirmed that the air flow rate was so high that it could not be set, showing a very poor leak prevention effect. In addition, the polishing pad of Comparative Example 2 does not have a multi-stage adhesive layer structure on the lowest end of the window, and the compressed portion of the support layer exists, but is formed in the area corresponding to the outer periphery of the window rather than the area corresponding to the lowest end of the window, resulting in water leakage as a result of a water leak test. occurred, and in the air leak measurement results, it was confirmed that the pressure change was about 100 times more than that of the polishing pads of Examples 1 to 6, showing relatively poor sealing properties.

As described above, the polishing pad according to one embodiment is a polishing pad capable of detecting the end point by applying a window, and applies a multi-stage adhesive layer structure to the bottom surface of the window, and at the same time compresses it to a specific area of the support layer. By providing a portion, the lifespan of the polishing pad, which requires replacement after use for a predetermined period, is maximized by substantially eliminating the possibility of water leakage, which is a negative factor due to local heterogeneity of the portion where the window is introduced, and the polishing pad is provided. By maximizing the leakage prevention effect during use of the pad, it can function as a process component that can manufacture excellent semiconductor devices.

100, 100', 200: Polishing pad
10: polishing layer
11: first side, polished side
12: Page 2
101: first through hole
102: Windows
20: Support base
21: Page 3
22: Page 4
201: second through hole
30: first adhesive layer
40: second adhesive layer
111: groove
112: Qigong
113: fine concave portion
103: Recess portion
300: Holder
120: surface plate
130: semiconductor substrate
140: Supply nozzle
150: Polishing slurry
160: Polishing head
170: Conditioner
180: light source
CR: Compression section (width of)
NCR: Non-compressed section
D1: Thickness of polishing layer
D2: Thickness of window
d1: Depth of groove
d2: Depth of recess
d3: 1st side - window top level difference
L1: first adhesive layer length
W2: Width of window support surface on third side
W3: first adhesive layer width
H1: Thickness of non-compressed part
H2: Thickness of compression section
w1: groove width
p1: groove pitch

Claims (14)

a polishing layer including a first surface that is a polishing surface and a second surface that is the rear surface thereof, and a first through hole penetrating from the first surface to the second surface;
a window disposed within the first through hole; and
It is disposed on the second surface side of the polishing layer, includes a third surface on the polishing layer side and a fourth surface that is the rear surface, and penetrates from the third surface to the fourth surface and is connected to the first through hole. It includes a support layer including a second through hole,
The second through hole is smaller than the first through hole,
The window's lowest cross-section is supported by the third surface,
Comprising a first adhesive layer between the lowermost surface of the window and the third surface,
between the second side and the third side; and a second adhesive layer between the lowermost surface of the window and the third surface,
The support layer includes a compression portion in a region corresponding to the lowest cross-section of the window,
The compressed portion is a continuous compressed area integrally formed to include all portions corresponding to the lowermost cross section of the window,
Polishing pad. According to paragraph 1,
The first adhesive layer includes a moisture-curable resin,
wherein the second adhesive layer includes a thermoplastic resin,
Polishing pad. According to paragraph 1,
The first adhesive layer is not disposed between the side of the first through hole and the side of the window,
Polishing pad. According to paragraph 1,
The first adhesive layer is also disposed between the side of the first through hole and the side of the window,
Polishing pad. According to paragraph 1,
The support layer includes a non-compressed portion in an area excluding the compressed portion,
The percentage of the thickness of the compressed portion compared to the thickness of the non-compressed portion is 0.01% to 80%,
Polishing pad. According to paragraph 1,
wherein the first side includes at least one groove,
The groove has a depth of 100㎛ to 1500㎛ and a width of 0.1mm to 20mm,
Polishing pad. According to clause 6,
wherein the first side includes a plurality of grooves,
The plurality of grooves include concentric circular grooves,
The concentric circular grooves have a gap between two adjacent grooves of 2 mm to 70 mm,
Polishing pad. According to paragraph 1,
The lowest cross section of the window includes a recess.
Polishing pad. According to clause 8,
The depth of the recess is 0.1 mm to 2.5 mm,
Polishing pad. According to paragraph 1,
The window includes a non-foaming cured product of a window composition containing a first urethane-based prepolymer,
The polishing layer includes a foamed cured product of a polishing layer composition including a second urethane-based prepolymer.
Polishing pad. According to paragraph 1,
The Shore D hardness measured in a dry state at room temperature for the first surface is smaller than the Shore D hardness measured in a dry state at room temperature for the top end of the window,
Polishing pad. Polishing comprising a first surface that is a polishing surface and a second surface that is the rear surface of the polishing surface, a first through hole penetrating from the first surface to the second surface, and a window disposed in the first through hole. providing a polishing pad with a layer; and
A step of placing the polishing target on the first surface so that the surface to be polished is in contact with the polishing target and then polishing the polishing target while rotating the polishing pad and the polishing target relative to each other under pressure conditions,
The polishing object includes a semiconductor substrate,
The polishing pad further includes a support layer disposed on the second surface side of the polishing layer,
The support layer includes a third surface on the side of the polishing layer and a fourth surface on the back thereof, and a second through hole passing from the third surface to the fourth surface and connected to the first through hole,
The second through hole is smaller than the first through hole,
The lowermost surface of the window is supported by the third surface,
Comprising a first adhesive layer between the lowermost surface of the window and the third surface,
between the second side and the third side; and a second adhesive layer between the lowermost surface of the window and the third surface,
The support layer includes a compression portion in a region corresponding to the lowest cross-section of the window,
The compressed portion is a continuous compressed area integrally formed to include all portions corresponding to the lowermost cross section of the window,
Manufacturing method of semiconductor devices. According to clause 12,
further comprising supplying a polishing slurry on the first surface,
The polishing slurry is sprayed on the first surface through a supply nozzle,
The flow rate of the polishing slurry sprayed through the supply nozzle is 10 ml/min to 1,000 ml/min,
Manufacturing method of semiconductor devices. According to clause 12,
The rotation speed of the polishing object and the polishing pad is respectively 10 rpm to 500 rpm,
Manufacturing method of semiconductor devices.