KR102566765B1 - 시클로부텐의 제조 방법 - Google Patents
시클로부텐의 제조 방법 Download PDFInfo
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- KR102566765B1 KR102566765B1 KR1020217023297A KR20217023297A KR102566765B1 KR 102566765 B1 KR102566765 B1 KR 102566765B1 KR 1020217023297 A KR1020217023297 A KR 1020217023297A KR 20217023297 A KR20217023297 A KR 20217023297A KR 102566765 B1 KR102566765 B1 KR 102566765B1
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- Prior art keywords
- halogen atom
- reaction
- catalyst
- cyclobutene
- mol
- Prior art date
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- CFBGXYDUODCMNS-UHFFFAOYSA-N cyclobutene Chemical compound C1CC=C1 CFBGXYDUODCMNS-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 125000005843 halogen group Chemical group 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 238000003795 desorption Methods 0.000 claims abstract description 34
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 24
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims abstract description 20
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000007792 gaseous phase Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 8
- 238000006704 dehydrohalogenation reaction Methods 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 description 53
- 239000003054 catalyst Substances 0.000 description 49
- 239000002994 raw material Substances 0.000 description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 24
- 125000001153 fluoro group Chemical group F* 0.000 description 22
- 229910052731 fluorine Inorganic materials 0.000 description 21
- 239000007789 gas Substances 0.000 description 20
- 239000000203 mixture Substances 0.000 description 19
- 229910000423 chromium oxide Inorganic materials 0.000 description 16
- 238000005796 dehydrofluorination reaction Methods 0.000 description 14
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 13
- UOUJSJZBMCDAEU-UHFFFAOYSA-N chromium(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Cr+3].[Cr+3] UOUJSJZBMCDAEU-UHFFFAOYSA-N 0.000 description 8
- 238000003682 fluorination reaction Methods 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 6
- 238000004949 mass spectrometry Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000012916 structural analysis Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003245 coal Substances 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 4
- 229910021563 chromium fluoride Inorganic materials 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- -1 these Chemical class 0.000 description 3
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- UHTBGZCYOATXPS-UHFFFAOYSA-M aluminum;oxygen(2-);fluoride Chemical compound [O-2].[F-].[Al+3] UHTBGZCYOATXPS-UHFFFAOYSA-M 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 239000004484 Briquette Substances 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- DXSOBOFFMLHPRJ-UHFFFAOYSA-L [Ni](F)(F)=O Chemical compound [Ni](F)(F)=O DXSOBOFFMLHPRJ-UHFFFAOYSA-L 0.000 description 1
- WTKBYUSJUDBTIS-UHFFFAOYSA-N [O-2].F.[Mg+2] Chemical compound [O-2].F.[Mg+2] WTKBYUSJUDBTIS-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- XKKQWEPXPQZMNH-UHFFFAOYSA-M chromium(3+);oxygen(2-);fluoride Chemical compound [O-2].[F-].[Cr+3] XKKQWEPXPQZMNH-UHFFFAOYSA-M 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001931 cyclobutenes Chemical class 0.000 description 1
- 125000001047 cyclobutenyl group Chemical group C1(=CCC1)* 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000006115 defluorination reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- MDKPDHUQPDWHHD-UHFFFAOYSA-M iron(3+);oxygen(2-);fluoride Chemical compound [O-2].[F-].[Fe+3] MDKPDHUQPDWHHD-UHFFFAOYSA-M 0.000 description 1
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 125000006340 pentafluoro ethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 239000012450 pharmaceutical intermediate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/25—Preparation of halogenated hydrocarbons by splitting-off hydrogen halides from halogenated hydrocarbons
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/35—Preparation of halogenated hydrocarbons by reactions not affecting the number of carbon or of halogen atoms in the reaction
- C07C17/357—Preparation of halogenated hydrocarbons by reactions not affecting the number of carbon or of halogen atoms in the reaction by dehydrogenation
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C23/00—Compounds containing at least one halogen atom bound to a ring other than a six-membered aromatic ring
- C07C23/02—Monocyclic halogenated hydrocarbons
- C07C23/06—Monocyclic halogenated hydrocarbons with a four-membered ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Abstract
일반식 (1):
(식 중, X1, X2, X3 및 X4는, 동일 또는 상이하고, 수소 원자, 할로겐 원자, 또는 퍼플루오로알킬기를 나타낸다. Y는, 할로겐 원자를 나타낸다.)
로 표시되는 시클로부텐의 제조 방법으로서,
일반식 (2):
(식 중, X1, X2, X3, X4 및 Y는, 상기와 같다. X5 및 X6은, 동일 또는 상이하고, 수소 원자, 할로겐 원자, 또는 퍼플루오로알킬기를 나타낸다.)
로 표시되는 시클로부탄을 탈리 반응시키는 공정을 포함하고, 상기 탈리 반응시키는 공정을 기상에서 행하는, 제조 방법.
Description
Claims (5)
- 일반식 (1):
(식 중, X1, X2, X3 및 X4는, 동일 또는 상이하고, 수소 원자, 할로겐 원자, 또는 퍼플루오로알킬기를 나타낸다. Y는, 할로겐 원자를 나타낸다.)
로 표시되는 시클로부텐의 제조 방법으로서,
일반식 (2):
(식 중, X1, X2, X3, X4 및 Y는, 상기와 같다. X5 및 X6은, 동일 또는 상이하고, 수소 원자, 할로겐 원자, 또는 퍼플루오로알킬기를 나타낸다.)
로 표시되는 시클로부탄을 탈리 반응시키는 공정을 포함하고,
상기 탈리 반응시키는 공정을 기상에서 행하는, 제조 방법. - 청구항 1에 있어서,
상기 X5는 수소 원자이고, 상기 X6은 할로겐 원자이며, 상기 탈리 반응이 탈할로겐화 수소 반응인, 제조 방법. - 삭제
- 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018245665A JP6835060B2 (ja) | 2018-12-27 | 2018-12-27 | シクロブテンの製造方法 |
JPJP-P-2018-245665 | 2018-12-27 | ||
PCT/JP2019/049900 WO2020137825A1 (ja) | 2018-12-27 | 2019-12-19 | シクロブテンの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20210108993A KR20210108993A (ko) | 2021-09-03 |
KR102566765B1 true KR102566765B1 (ko) | 2023-08-16 |
Family
ID=71127736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020217023297A Active KR102566765B1 (ko) | 2018-12-27 | 2019-12-19 | 시클로부텐의 제조 방법 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP6835060B2 (ko) |
KR (1) | KR102566765B1 (ko) |
CN (1) | CN113227026A (ko) |
SG (1) | SG11202106891PA (ko) |
TW (1) | TWI777113B (ko) |
WO (1) | WO2020137825A1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20240376363A1 (en) * | 2021-09-27 | 2024-11-14 | Honeywell International Inc. | Fluorine substituted cyclobutene compounds, and compositions, methods and uses including same |
WO2023049515A1 (en) * | 2021-09-27 | 2023-03-30 | Honeywell International Inc. | Fluorine substituted cyclobutene compounds, and compositions, methods and uses including same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US2891968A (en) * | 1955-08-12 | 1959-06-23 | Du Pont | Difluorobutenedioic acids, their alkali metal salts, their alkyl esters and anhydride, and process for preparing them |
GB844604A (en) * | 1955-09-14 | 1960-08-17 | Robert Neville Haszeldine | Halogenated organic compounds |
JPH07100673B2 (ja) * | 1986-08-19 | 1995-11-01 | 旭化成工業株式会社 | 1−フルオロシクロヘキセンの製造法 |
KR940002713B1 (ko) * | 1991-12-03 | 1994-03-31 | 주식회사 코오롱 | 디아조타입 감광체 원료의 제조방법 |
TWI298716B (ko) * | 2001-08-06 | 2008-07-11 | Showa Denko Kk | |
US7560602B2 (en) * | 2005-11-03 | 2009-07-14 | Honeywell International Inc. | Process for manufacture of fluorinated olefins |
CN102026946B (zh) * | 2008-07-18 | 2014-03-12 | 日本瑞翁株式会社 | 含氢氟烯烃化合物的制造方法 |
JP5311009B2 (ja) * | 2008-08-14 | 2013-10-09 | 日本ゼオン株式会社 | 含水素フルオロオレフィン化合物の製造方法 |
JP5158366B2 (ja) * | 2008-11-25 | 2013-03-06 | 日本ゼオン株式会社 | 含水素フルオロオレフィン化合物の製造方法 |
JP5056963B2 (ja) * | 2010-03-31 | 2012-10-24 | ダイキン工業株式会社 | 含フッ素アルカンの製造方法 |
US8921622B2 (en) * | 2010-04-02 | 2014-12-30 | Solvay Sa | Process for dehydrofluorinating hydrochlorofluoroalkanes and products obtained thereby |
EP2569269A4 (en) * | 2010-05-03 | 2014-01-29 | Arkema Inc | DEHYDROFLUORINATION OF PENTAFLUORO CANNES FOR FORMING TETRAFLUOROLEFINS |
CN102836722B (zh) * | 2012-09-06 | 2014-10-15 | 西安近代化学研究所 | 一种卤氟烷烃脱卤化氢制备含氟烯烃的催化剂及其制备方法 |
WO2015029839A1 (ja) * | 2013-08-26 | 2015-03-05 | 旭硝子株式会社 | 含フッ素化合物の製造方法 |
CN105107533B (zh) * | 2015-08-18 | 2019-04-09 | 巨化集团技术中心 | 一种气相脱氟化氢催化剂的制备方法 |
CN107739294B (zh) * | 2017-10-17 | 2020-08-21 | 北京宇极科技发展有限公司 | 气相脱氟化氢制备氢氟环戊烯的方法 |
CN107721810B (zh) * | 2017-11-07 | 2020-12-01 | 中国民航大学 | 一种合成灭火剂八氟环丁烷的方法 |
JP7166911B2 (ja) * | 2018-12-25 | 2022-11-08 | ダイキン工業株式会社 | シクロブテンの製造方法 |
-
2018
- 2018-12-27 JP JP2018245665A patent/JP6835060B2/ja active Active
-
2019
- 2019-12-19 WO PCT/JP2019/049900 patent/WO2020137825A1/ja active Application Filing
- 2019-12-19 CN CN201980086441.9A patent/CN113227026A/zh active Pending
- 2019-12-19 KR KR1020217023297A patent/KR102566765B1/ko active Active
- 2019-12-19 SG SG11202106891PA patent/SG11202106891PA/en unknown
- 2019-12-26 TW TW108147731A patent/TWI777113B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW202035349A (zh) | 2020-10-01 |
CN113227026A (zh) | 2021-08-06 |
KR20210108993A (ko) | 2021-09-03 |
SG11202106891PA (en) | 2021-07-29 |
WO2020137825A1 (ja) | 2020-07-02 |
JP2020105114A (ja) | 2020-07-09 |
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