KR102549246B1 - Method of manufacturing temperature and stress-sensitive film and temperature and stress-sensitive measuring system - Google Patents

Abstract

The present invention relates to a method for manufacturing a temperature and stress sensitive film and a temperature and stress measuring system, and more particularly, to manufacturing a flexible temperature and stress sensitive film by uniformly mixing two kinds of inorganic phosphorescent materials and a polyimide derivative compound. and a non-contact measurement system capable of measuring a wide range of temperature and stress using the same.

Description

Method of manufacturing temperature and stress-sensitive film and temperature and stress-sensitive measuring system

The present invention relates to a method for manufacturing a temperature and stress sensitive film and a temperature and stress measuring system, and more particularly, to manufacturing a flexible temperature and stress sensitive film by uniformly mixing two kinds of inorganic phosphorescent materials and a polyimide derivative compound. and a non-contact measurement system capable of measuring a wide range of temperature and stress using the same.

Sensors act as a link between the machine and the real world. By sending information from the real world to the machine, the machine can make a series of responses based on this information to meet various life or production needs. Advances in robotics, industry and advanced medical technologies place increasingly high requirements on flexible sensors. In particular, with the maturation of artificial intelligence technology in recent years, “letting machines replace people” will become possible, which will largely depend on perception and interaction between machines and the real world. In other words, high-performance sensors will be the key to future industrial development.

Temperature and stress, two of the most common signals in the real world, play very important roles in human life and production sites. Especially in industrial production there is great demand for temperature and stress sensors. In most industries, temperature and stress influence each other. Therefore, research on the accurate measurement method for these two signals has always been one of the important research directions of many researchers. In recent years, scientific researchers have invested a lot of effort and money in this field and have successfully developed flexible temperature and stress sensors based on electrical signals. However, given the complex structure, high manufacturing cost, limited use environment, and other disadvantages, these sensors are difficult to mass-produce and are difficult to use in production and daily life. Therefore, a new type of multi-measurement sensor that simultaneously measures temperature and stress must be developed to meet the increasing demands of the manufacturing and medical fields. Newly developed sensors should have advantages such as flexibility, simple structure, efficient detection, and adaptability to harsh environments.

Accordingly, the inventors of the present invention have completed the present invention by recognizing that it is urgent to develop a method for manufacturing a temperature and stress sensitive film sensor and a temperature and stress measuring system that are required in various fields and to overcome the above problems.

Republic of Korea Patent Registration No. 10-1843854 Republic of Korea Patent Registration No. 10-1835218

An object of the present invention relates to a method for manufacturing a temperature and stress sensitive film and a temperature and stress measuring system, and more specifically, to a flexible temperature and stress sensitive film obtained by uniformly mixing two kinds of inorganic phosphorescent materials and a polyimide derivative compound. To manufacture, and to provide a non-contact measurement system capable of measuring a wide range of temperature and stress using the same.

The technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by those skilled in the art from the description of the present invention.

In order to achieve the above object, the present invention provides a method for manufacturing a temperature and stress sensitive film and a temperature and stress measuring system.

Hereinafter, this specification will be described in more detail.

The present invention provides a method for manufacturing a temperature and stress sensing film comprising the following steps.

(S1) 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-(Hexafluoroisopropylidene)diphthalic anhydride, 6FDA), 4,4'-methylenedicyclohexanamine (4,4'- Preparing a compound represented by Formula 2 by mixing Methylenedicyclohexanamine, MCA) and methylpyrrolidone (N-methyl-2-pyrrolidone, NMP); and

(S2) preparing a compound represented by the following [Formula 1] by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by [Formula 2] and performing a thermal imidation reaction; Method for producing a temperature and stress sensing film comprising a.

[Formula 1]

[Formula 2]

[Wherein, n is 1 to 1,000,000,000].

In the present invention, the step (S1)

(S1a) mixing the MCA and NMP; and

(S1b) preparing a compound represented by [Formula 1] by adding 6FDA to the mixture;

The 6FDA:MCA is mixed in a molar mass ratio of 1:0.8 to 1.2.

In the present invention, the step (S2) is

(S2a) preparing a mixture by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by Formula 2;

(S2b) coating the mixture on a cover slip; and

(S2c) preparing a temperature and stress sensing film by performing a thermal imidation reaction on the coated mixture at a temperature of 120 to 350 ° C;

The inorganic phosphorescent material is added in an amount of 1 to 20% by weight based on the total mass% of the compound represented by Formula 1.

The present invention provides a temperature and stress sensing system comprising:

a signal generator outputting a control signal;

an excitation light source controlled by a control signal of the signal generator;

a target material to which a temperature and stress sensing film is attached to emit excitation light from the excitation light source as emission light; and

A signal processing unit for extracting the emitted light as a phosphorescence attenuation signal.

In the present invention, the signal generator sends out a control signal to make the excitation light source have a pulse width of 5 ns to 50 ms.

In the present invention, the signal generator sends out a control signal that causes the excitation light source to have a pulse period of 10 to 1000 ms.

In the present invention, the signal processing unit is equipped with a phosphorescent filter, and the phosphorescent filter passes a wavelength band of 620 to 670 nm.

In the present invention, the signal processing unit is equipped with a detector for obtaining a temperature-related phosphorescence decay signal,

The temperature related phosphorescence decay signal is converted to a calibration curve of phosphorescence lifetime versus temperature using Equation 1:

[Equation 1]

I(t) = _I0 × exp(-t/τ) + b

In the above equation, I(t) is the phosphorescence intensity over time, I ₀ is the phosphorescence intensity in a fully excited state, t is the decay time, τ is the phosphorescence decay constant, and b is noise.

In the present invention, the signal processing unit is equipped with a detector for obtaining a stress-related phosphorescence decay signal,

The stress related phosphorescence decay signal is converted to a calibration curve of stress versus phosphorescence intensity using Equation 2:

[Equation 2]

ε = I _M / I _a

In the above equation, I _M is the intensity of mechanoluminescence recorded after the stress is applied, and I _a is the intensity of the afterglow recorded before the stress is applied.

All matters mentioned in the method of manufacturing the temperature and stress sensitive film and the temperature and stress measuring system above apply equally unless contradictory.

The manufacturing method of the temperature- and stress-sensitive film of the present invention may have advantages of flexibility, long service life, wide measurement range, and high accuracy, and has an effect of having strong resistance to harsh environments by using a polyimide derivative.

The temperature and stress measurement system of the present invention has the effect of measuring a wide temperature and stress range.

The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

1 is a schematic configuration diagram of a temperature and stress measurement system according to the present invention.
2 is a cross-sectional view of a temperature and stress sensing film according to the present invention and an enlarged view of an inorganic phosphor in the film.
3 is a spectrum and a graph showing temperature-related phosphorescence decay signal information in Experimental Example 1;
4 is a spectrum and a graph showing stress-related phosphorescence decay signal information in Experimental Example 2;
5 is a graph showing a comparison of the temperature measured with a thermocouple over heating elapsed time and the temperature measured with the sensing film of the present invention against elapsed heating time.
6 is a photograph showing the result of sensing stress using the temperature and stress sensing film according to the present invention.

The terms used in this specification have been selected from general terms that are currently widely used as much as possible while considering the functions in the present invention, but these may vary depending on the intention of a person skilled in the art, precedent, or the emergence of new technologies. In addition, in a specific case, there is also a term arbitrarily selected by the applicant, and in this case, the meaning will be described in detail in the description of the invention. Therefore, the term used in the present invention should be defined based on the meaning of the term and the overall content of the present invention, not simply the name of the term.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which the present invention belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and unless explicitly defined in this application, it should not be interpreted in an ideal or excessively formal meaning. don't

Numerical ranges are inclusive of the values defined therein. Every maximum numerical limitation given throughout this specification includes every lower numerical limitation, as if such lower numerical limitations were expressly written. Every minimum numerical limitation given throughout this specification includes every higher numerical limitation, as if such higher numerical limitations were expressly written. Every numerical limitation given throughout this specification will include every better numerical range within the broader numerical range, as if the narrower numerical limitations were expressly written.

Hereinafter, embodiments of the present invention will be described in detail, but it is obvious that the present invention is not limited by the following examples.

Manufacturing method of temperature and stress sensing film

The present invention provides a temperature and stress sensing film manufactured by the following method.

(S1) 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-(Hexafluoroisopropylidene)diphthalic anhydride, 6FDA), 4,4'-methylenedicyclohexanamine (4,4'- Preparing a compound represented by Formula 2 by mixing Methylenedicyclohexanamine, MCA) and methylpyrrolidone (N-methyl-2-pyrrolidone, NMP); and

(S2) preparing a compound represented by [Formula 1] by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by [Formula 2] and performing a thermal imidation reaction.

[Formula 1]

[Formula 2]

[Wherein, n is 1 to 1,000,000,000].

The step (S1) is a step of preparing a compound represented by [Chemical Formula 2], and may consist of the following steps.

(S1a) mixing the MCA and NMP; and

(S1b) preparing a compound represented by [Formula 1] by adding 6FDA to the mixture.

More specifically, the 6FDA: MCA may be used in a molar mass ratio of 1: 0.8 to 1.2, preferably 1: may be used in a molar mass ratio of 0.9 to 1.1. In addition, the NMP may be measured and used to have a mass-volume ratio (W/V) that satisfies W(MCA+6FDA)/V(NMP) = 0.1 to 0.2.

For example, when the MCA (0.105 g, 0.5 mmol) and 6FDA (0.222 g, 0.5 mmol) are used in a molar mass ratio of 1: 1, the NMP is W (MCA (0.105 g) + 6FDA (0.222g)) Since /V(NMP(mL)) = 0.1 to 0.2 must be satisfied, 1.635 to 3.27 mL of NMP may be used. In other words, 0.105 g of MCA (0.5 mmol) and 1.635 to 3.27 mL of NMP may be mixed, and 0.222 g of 6FDA (0.5 mmol) may be added to the mixture.

The step (S1a) may be performed while stirring under a non-reactive gas condition, and the non-reactive gas may be helium, argon or nitrogen, preferably argon or nitrogen, and most preferably nitrogen. .

In the step (S1b), the 6FDA may be slowly added dropwise to the mixture prepared in the step (S1a) at room temperature or room temperature and stirred at the same time.

In the step (S1b), the stirring step may be performed for 20 hours to 28 hours, preferably 23 hours to 25 hours.

The step (S1b) may be performed while stirring under a non-reactive gas condition, and the non-reactive gas may be helium, argon or nitrogen, preferably argon or nitrogen, and most preferably nitrogen. .

The compound represented by [Formula 1] prepared in the step (S1b) may be a transparent compound or a viscous compound.

The step (S2) is a step of preparing the polyimide compound represented by the [Formula 1] by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by the [Formula 2], and consists of the following steps: It can be.

(S2a) preparing a mixture by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by Formula 2;

(S2b) coating the mixture on a cover slip; and

(S2c) preparing a temperature and stress sensing film by performing a thermal imidization reaction on the coated mixture at a temperature of 120 to 350°C.

In the step (S2), when the temperature-sensing inorganic phosphor and the stress-sensing inorganic phosphor are added, they may be mixed by stirring, and the stirring may be performed for 0.5 to 4 hours.

The inorganic phosphorescent material may be a phosphorescent material containing a rare earth metal. More specifically, the inorganic phosphor may be a phosphor containing at least one rare earth metal selected from the group consisting of Eu ²⁺ , Eu ³⁺ , Mn ⁴⁺ , Mn ²⁺ and Dy ³⁺ , preferably. , Y ₂ O ₃ :Eu ³⁺ , Y ₂ O ₂ S:Eu ³⁺ , TiO ₂ :Eu ³⁺ , Gd ₂ O ₃ :Eu ³⁺ , GdAlO ₃ :Eu ³⁺ , La ₂ O ₂ S:Eu ³⁺ , BaMg ₂ Al ₁₀ O ₁₇ :Eu ²⁺ , SrAl ₂ O ₄ :Eu ²⁺ , (Sr,Mg) ₂ SiO ₄ :Eu ²⁺ , Mg ₄ FGeO ₆ :Mn ⁴⁺ , TiMg ₂ O ₄ : It may be one or more selected from the group consisting of Mn ⁴⁺ , and SrAl ₂ O ₄ :Dy ³⁺ , most preferably Mg ₄ FGeO ₆ :Mn ⁴⁺ , SrAl ₂ O ₄ :Eu ²⁺ and SrAl ₂ O ₄ : It may be one or more selected from the group consisting of Dy ³⁺ .

The temperature-sensing inorganic phosphor may be a particle of 0.1 to 10 μm. More specifically, when the temperature-sensing inorganic phosphor is less than 0.1 μm, it is impossible to prepare phosphor particles, and when the temperature-sensing inorganic phosphor is greater than 10 μm, the surface of the polyimide compound represented by Formula 1 This roughening problem can occur.

The diameter of the stress-sensing inorganic phosphor may be a particle of 50 to 120 μm.

The temperature- and stress-sensing inorganic phosphor may be added to the compound represented by [Formula 2] in an amount of 1 to 20% by weight based on the total mass% of the compound represented by [Formula 2], preferably the [Formula 2]. 2] may be added in an amount of 1 to 16% by weight based on the total mass% of the compound.

Step (S2b) may be a step of coating the mixture prepared in step (S2a) on a cover slip. More specifically, the mixture prepared in step (S2a) may be applied to a clean cover slip and then coated in a vacuum oven at 50 to 70° C. for 1 to 8 hours.

The step (S2c) may be a step of finally preparing a temperature and stress sensing film through a thermal imidation reaction. More specifically, the mixture coated in step (S2b) is subjected to a first thermal imidation reaction at 60 to 100 ° C, a second thermal imidization reaction at 120 to 220 ° C, and a second thermal imidization reaction at 220 to 280 ° C A tertiary thermal imidation reaction may be performed at, and a 4 thermal imidation reaction may be sequentially performed at 280 to 350 °C. In addition, when the thermal imidation reaction is performed at less than 80 ° C., the reaction does not occur, and when performed at more than 350 ° C., the produced film is burned and the film form is not obtained.

The thermal imidation reaction may be performed under non-reactive gas conditions, and the non-reactive gas may be helium, argon or nitrogen, preferably argon or nitrogen, and most preferably nitrogen. In addition, the first thermal imidation reaction may be carried out for 0.5 to 6 hours, and the second to fourth thermal imidation reactions may be carried out for 0.1 to 5 hours.

The temperature and stress sensing film may be in the form of a transparent or translucent film, and may have a size of 1 mm 2 to 1 m 2 and a thickness of 40 to 100 μm.

Temperature and Stress Measurement System

The present invention includes a signal generator 10 for outputting a control signal; an excitation light source 20 controlled by a control signal of the signal generator 10; a target material 30 to which a temperature and stress sensing film 31 is attached to emit excitation light from the excitation light source 20 as emission light; and a signal processing unit 40 for extracting the emitted light as a phosphorescence attenuation signal.

The temperature and stress sensing film 31 may be manufactured and applied in the same manner as described above.

The control signal output by the signal generator 10 may be a pulse signal.

The control signal enables the excitation light source 20 to emit pulsed light with a pulse period of 10 to 1000 ms.

The control signal enables the excitation light source 20 to emit pulsed light with a pulse width of 1 to 5 ms.

The wavelength of the excitation light source 20 controlled by the control signal of the signal generator 10 may range from 250 to 430 nm, preferably from 260 to 410 nm.

The excitation light source 20 has a power of 0 to 20 W, preferably 0 to 15 W.

The excitation light source 20 may be an LED lamp or a laser, but is not limited thereto.

The target material 30 is a material whose temperature and stress are measured by emitting excitation light received from the excitation light source 20 as emission light, and the target material 30 is the temperature and stress sensing film 31 It may be a material of metal component to which it may be attached.

The signal processor 40 may include two phosphorescent filters 41, a detector 42, and a computer 43 connected thereto.

A band pass filter may be used for the phosphorescent filter 41, when measuring temperature, the band pass filter may pass a wavelength band of 620 to 670 nm, and when measuring stress, the band pass filter It can pass a wavelength band of 480 to 700 nm.

The phosphor filter 41 may be mounted on a lens of the detector 42 .

A phosphorescent signal related to temperature and stress received from the target material 30 may pass through the phosphorescent filter 41 , be acquired by a detector 42 , and transmitted to a computer 43 .

The detector 42 may be a CCD camera or a CMOS high-speed camera, but is not limited thereto as long as it is a detector capable of measuring to detect the emitted light emitted from the target material 30 .

According to a preferred embodiment of the present invention, when measuring the temperature, the excitation light received from the excitation light source 20 is converted into emitted light by the temperature and stress sensing film 31 attached to the target material 30. may be released. The emitted light may be filtered into a temperature-related phosphorescence signal by passing through the phosphorescence filter 41 and extracted as a phosphorescence attenuation signal. The extracted phosphorescence decay signal may be converted into a calibration curve of temperature versus phosphorescence lifetime in the signal processing unit 40 through Equation 1 below.

[Equation 1]

I(t) = _I0 × exp(-t/τ) + b

In the above equation, I(t) is the phosphorescence intensity over time, I ₀ is the phosphorescence intensity in a fully excited state, t is the decay time, τ is the phosphorescence decay constant, and b is noise.

According to a preferred embodiment of the present invention, when the stress is measured, the temperature and stress sensing film 31 may be charged with an inorganic phosphor before the excitation light is emitted as an emission light. Thereafter, when the excitation light source 20 is turned off, the charged inorganic phosphor material may emit an afterglow.

After the afterglow is emitted, stress may be applied to the temperature and stress sensing film 31 .

The temperature and stress sensing film 31 to which the stress is applied may generate mechanical light emission.

The stress-related phosphorescence signal received from the target material 30 passes through the phosphorescence filter 41, is acquired by the detector 42, and transmitted to the computer 43, where it may be extracted as a phosphorescence attenuation signal. The extracted phosphorescence attenuation signal may be converted into a calibration curve of a stress-to-intensity ratio in the signal processing unit 40 through [Equation 2] below.

[Equation 2]

ε = I _M / I _a

In the above equation, I _M is the intensity of mechanoluminescence recorded after the stress is applied, and I _a is the intensity of the afterglow recorded before the stress is applied.

The temperature and stress measuring system 1 can measure the temperature and stress of a target material having a wide temperature range of -200 to 400 ° C and a wide stress range of 0.1 to 20 Mpa, and thus, bionic robots or biomedicine, etc. It can be used for temperature and stress measurements in technology.

Advantages and features of the present invention, and methods of achieving them, will become clear with reference to the embodiments described below in detail. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only the embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the person who has the scope of the invention, and the present invention is only defined by the scope of the claims.

Preparation Example 1. Preparation of a compound represented by [Formula 2]

0.105 g of MCA (0.5 mmol) and 2.2 mL of NMP were mixed in a glass reactor at room temperature under nitrogen conditions. Thereafter, while slowly adding 0.222 g of 6FDA (0.5 mmol) to the mixture, the mixture was stirred at room temperature for 24 hours to prepare the compound represented by Formula 2.

Example 1. Temperature and Stress Sensing Film Preparation

SAOED (SrAl ₂ O ₄ : Eu ²⁺ , Dy ³⁺ ) and MFG (Mg ₄ FGeO ₆ : Mn ⁴⁺ ) were added to the compound represented by [Chemical Formula 2] prepared in 1.1 above and stirred vigorously for 1 hour. did The mixture was coated onto a clean cover slip and stored in a vacuum oven at 60° C. for 4 hours. A thermal imidization reaction was performed at 80° C. for 2 hours, 160° C., 240° C., and 300° C. for 1 hour under a nitrogen atmosphere. The final product was peeled off from the cover slip to prepare a composite film of SAOED + MFG/polyimide. A cross section of the composite film and the inorganic phosphorescent material SAOED and MFG layers are shown in FIG. 2 below.

Experimental Example 1. Confirmation of temperature measurement

Excitation light was controlled by generating a pulse signal having a pulse width of 50 ms and a pulse period of 100 ms through a signal transmitter, and the excitation light was irradiated with a wavelength of 385 nm, and an LED was used as the excitation light source. Next, the temperature and stress sensing film to which the target material is attached receives the excitation light and emits emission light, and the emission light is filtered into a phosphorescence signal related to temperature by passing through the phosphorescence filter, and thus a phosphorescence attenuation signal related to temperature. was extracted with And, the phosphorescence attenuation signal was converted into a calibration curve of temperature versus phosphorescence lifetime through [Equation 1] in the signal processing unit, and finally, temperature information for the calibration curve of temperature versus phosphorescence lifetime is shown in FIG. 3 . 3A is a spectrum showing the decay behavior of phosphorescence at 654 nm under excitation of 385 nm UV light, FIG. 3B is a spectrum showing the decay of phosphorescence at 654 nm at 20° C. and 100° C., and FIG. 3C is a temperature vs. decay lifetime It is a graph showing the calibration curve of

Experimental Example 2. Check stress measurement

Using a 480 nm band pass filter as a phosphorescent filter, generating a pulse signal having a pulse width of 50 ms and a pulse period of 100 ms through a signal transmitter to control excitation light, and irradiating the excitation light with a wavelength of 400 nm and an LED was used as the excitation light source. The inorganic phosphorescent material SAOED of the temperature and stress sensing film to which the target material was attached was charged with the excitation light, and after the excitation light source was turned off, an afterglow was emitted. And a stress-related phosphorescence decay signal was extracted from the mechanoluminescence generated by the afterglow. In addition, the phosphorescence attenuation signal was converted into a calibration curve of stress versus intensity ratio through [Equation 2] in the signal processor, and finally, the stress information for the calibration curve of stress versus phosphorescence lifetime is shown in FIG. 4 . 4A is a spectrum showing the decay behavior of phosphorescence at 520 nm under excitation with 400 nm UV light, FIG. 4B is a spectrum showing the decay of phosphorescence at 520 nm, and FIG. 4C is a graph showing a calibration curve of stress versus decay life. am. 6 is a photograph showing the result of sensing stress using the temperature and stress sensing film of the present invention.

From the above description, those skilled in the art pertaining to the present invention will be able to understand that the present invention can be implemented in other specific forms without changing its technical spirit or essential features. In this regard, the embodiments described above are illustrative in all respects and should be understood as non-limiting.

Claims (9)

(S1) 4,4'-(hexafluoroisopropylidene)diphthalic anhydride (4,4'-
[ Preparing a compound represented by Formula 2]; and
(S2) preparing a compound represented by [Formula 1] by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by [Formula 2] and performing a thermal imidation reaction; A method for manufacturing a temperature and stress sensing film comprising:
[Formula 1]

[Formula 2]

[Wherein, n is 1 to 1,000,000,000]. According to claim 1,
The step (S1) is
(S1a) mixing the MCA and NMP; and
(S1b) preparing a compound represented by [Formula 1] by adding 6FDA to the mixture;
The method of manufacturing a temperature and stress sensing film, characterized in that the 6FDA: MCA is mixed in a molar mass ratio of 1: 0.8 to 1.2. According to claim 1,
The step (S2) is
(S2a) preparing a mixture by adding a temperature-sensing inorganic phosphor and a stress-sensing inorganic phosphor to the compound represented by Formula 2;
(S2b) coating the mixture on a cover slip; and
(S2c) preparing a temperature and stress sensing film by performing a thermal imidation reaction on the coated mixture at a temperature of 120 to 350 ° C;
The method of manufacturing a temperature and stress sensing film, characterized in that the inorganic phosphor is added in an amount of 1 to 20% by weight based on the total mass% of the compound represented by Formula 1. a signal generator outputting a control signal;
an excitation light source controlled by a control signal of the signal generator;
a target material to which a temperature and stress sensing film is attached to emit excitation light from the excitation light source as emission light; and
A signal processing unit for extracting the emitted light as a phosphorescence attenuation signal; includes,
The temperature and stress sensing film according to any one of claims 1 to 3, wherein MFG (Mg ₄ FGeO ₆ :Mn ⁴⁺ ) is used as the temperature sensing inorganic phosphor and SAOED (SAOED) is used as the stress sensing inorganic phosphor. A temperature and stress sensing system, characterized in that produced by adding SrAl ₂ O ₄ :Eu ²⁺ and SrAl ₂ O ₄ :Dy ³⁺ ). According to claim 4,
wherein the signal generator outputs a control signal to cause the excitation light source to have a pulse width of 5 ns to 50 ms. According to claim 4,
wherein the signal generator outputs a control signal to cause the excitation light source to have a pulse period of 10 to 1000 ms. According to claim 4,
The signal processing unit is equipped with a phosphorescent filter,
The temperature and stress sensing system, characterized in that the phosphorescent filter passes a wavelength band of 620 to 670 nm. According to claim 4,
The signal processing unit is equipped with a detector for obtaining a temperature-related phosphorescence decay signal,
The temperature and stress sensing system, characterized in that the temperature-related phosphorescence decay signal is converted to a calibration curve of temperature versus phosphorescence lifetime using Equation 1:
[Equation 1]
I(t) = _I0 × exp(-t/τ) + b
In the above equation, I(t) is the phosphorescence intensity over time, I ₀ is the phosphorescence intensity in a fully excited state, t is the decay time, τ is the phosphorescence decay constant, and b is noise. According to claim 4,
The signal processing unit is equipped with a detector for obtaining a stress-related phosphorescence decay signal,
The temperature and stress sensing system, characterized in that the stress-related phosphorescence decay signal is converted to a calibration curve of stress-to-intensity ratio using Equation 2:
[Equation 2]
ε = I _M / I _a
In the above equation, I _M is the intensity of mechanoluminescence recorded after the stress is applied, and I _a is the intensity of the afterglow recorded before the stress is applied.

Images