KR102533946B1 - conductive substrate - Google Patents

Abstract

A transparent substrate, a metal layer formed on at least one side of the transparent substrate, and a blackening layer formed on at least one side of the transparent substrate, wherein the blackening layer is a simple substance and compound of copper and a simple substance and/or compound of nickel. The copper compound includes copper oxide and copper hydroxide, and when the blackening layer is measured by X-ray photoelectron spectroscopy, the peak area of the copper oxide obtained using the Cu2P _{3 /2} spectrum and the Cu LMM spectrum and when the sum of the peak areas of the copper hydroxide is 100, the peak area of the copper oxide is 40 or more and the peak area of the copper hydroxide is 60 or less.

Description

conductive substrate

The present invention relates to conductive substrates.

A capacitive touch panel converts position information of an object approaching the panel surface into an electrical signal by detecting a change in capacitance generated by an object approaching the panel surface. Since the conductive substrate used in the capacitive touch panel is installed on the surface of the display, the material of the conductive layer of the conductive substrate is required to have a low reflectance and be difficult to be visually recognized.

Therefore, as the material of the conductive layer used in the conductive substrate for a touch panel, a material having a low reflectance and difficult to be visually recognized is used, and it is formed on a transparent substrate or a transparent film.

For example, as disclosed in Patent Literature 1, a transparent conductive film for a touch panel in which an ITO (indium-tin oxide) film is conventionally formed as a transparent conductive film on a polymer film is used.

By the way, in recent years, a display having a touch panel has been made larger, and in response to this, a larger area is also required for a conductive substrate such as a transparent conductive film for a touch panel. However, ITO has a problem in that it has a high electrical resistance value and cannot cope with the large area of the conductive substrate.

Therefore, in order to suppress the electrical resistance of a conductive substrate, a method of using copper mesh wiring as a conductive layer and blackening the surface of the copper mesh wiring has been proposed.

For example, in Patent Document 2, a step of forming a resist layer on a copper thin film supported by a film, a step of processing at least the resist layer into a stripe-shaped wiring pattern and a drawing-out wiring pattern by a photolithography method, and exposure Disclosed is a method for manufacturing a film-shaped touch panel sensor, which includes a step of forming stripe-shaped copper wiring and lead-out copper wiring by removing the formed copper thin film by etching, and a step of blackening the copper wiring.

However, in Patent Literature 2, a method of blackening the copper wiring after forming the stripe-shaped copper wiring by etching is employed, and since the manufacturing process is increased, there is a problem in productivity.

Then, the inventors of the present invention etch the metal layer and the blackening layer on a conductive substrate in which a metal layer and a blackening layer are formed on a transparent substrate to obtain a conductive substrate having a desired wiring pattern, thereby reducing the manufacturing process and achieving high A method for manufacturing a conductive substrate capable of obtaining productivity was studied.

Japanese Unexamined Patent Publication No. 2003-151358 Japanese Unexamined Patent Publication No. 2013-206315

However, there is a case where the reactivity to the etchant is greatly different between the metal layer and the blackening layer. Therefore, when the metal layer and the blackening layer are etched simultaneously, either of the layers cannot be etched into a target shape, or the metal layer and the blackening layer are not etched uniformly within the plane and the dimensions are jagged. There was a problem that the layers could not be etched simultaneously.

In view of the problems of the prior art, an object of the present invention is to provide a conductive substrate having a metal layer and a blackening layer that can be simultaneously etched.

In one aspect of the present invention for solving the above problems, a transparent substrate, a metal layer formed on at least one side of the transparent substrate, and a blackening layer formed on at least one side of the transparent substrate, the blackening layer It contains a simple substance and compound of copper and a simple substance and/or compound of nickel, and the copper compound includes copper oxide and copper hydroxide, and when the blackened layer is measured by X-ray photoelectron spectroscopy, Cu2P When the sum of the peak area of copper oxide and the peak area of copper hydroxide obtained using the _3/2 spectrum and the Cu LMM spectrum is 100, the peak area of the copper oxide is 40 or more and the peak area of the copper hydroxide is 60 The following conductive substrate is provided.

According to one aspect of the present invention, it is possible to provide a conductive substrate having a metal layer and a blackening layer that can be simultaneously etched.

1A is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
1B is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
2A is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
2B is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.
3 is a top view of a conductive substrate with mesh-shaped wiring according to an embodiment of the present invention.
Figure 4a is a cross-sectional view taken along line AA' of Figure 3;
Figure 4b is a cross-sectional view taken along line AA' of Figure 3;
5 is an explanatory diagram of a roll-to-roll sputtering device.

Hereinafter, one embodiment of the conductive substrate and the conductive substrate manufacturing method of the present invention will be described.

(conductive substrate)

The conductive substrate of this embodiment may have a transparent substrate, a metal layer, and a blackening layer. And, the metal layer may be formed on at least one side of the transparent substrate, and may be formed on at least one side of the transparent substrate also for the blackening layer. In addition, the blackening layer contains a simple substance and compound of copper and a simple substance and/or compound of nickel, and may contain copper oxide and copper hydroxide as the copper compound.

And, when the blackening layer is measured by X-ray photoelectron spectroscopy, when the sum of the peak area of copper oxide and the _peak area of copper hydroxide determined using the Cu2P _3/2 spectrum and the Cu LMM spectrum is 100, copper oxide The peak area of 40 or more, and the peak area of copper hydroxide can be 60 or less.

On the other hand, the conductive substrate in this embodiment includes a substrate having a metal layer and a blackening layer on the surface of a transparent substrate before patterning the metal layer or the like, and a substrate on which the metal layer or the like is patterned, that is, a wiring board. The conductive substrate after patterning the metal layer and the blackening layer can transmit light because the transparent substrate includes a region not covered by the metal layer or the like, and thus becomes a transparent conductive substrate.

First, each member included in the conductive substrate of the present embodiment will be described below.

The transparent substrate is not particularly limited, and preferably, an insulator film or glass substrate that transmits visible light can be used.

As the insulator film that transmits visible light, preferably, for example, a polyamide-based film, a polyethylene terephthalate-based film, a polyethylene naphthalate-based film, a cycloolefin-based film, a polyimide-based film, a polycarbonate-based film, etc. A resin film can be used. Particularly, more preferably, PET (polyethylene terephthalate), COP (cycloolefin polymer), PIN (polyethylene naphthalate), polyamide, polyimide, polycarbonate, etc. can be used as the material of the insulator film that transmits visible light. there is.

The thickness of the transparent substrate is not particularly limited, and can be arbitrarily selected depending on the strength, capacitance, light transmittance, etc. required in the case of a conductive substrate. The thickness of the transparent substrate can be, for example, 10 μm or more and 200 μm or less. In particular, when used for a touch panel, the thickness of the transparent substrate is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of use in a touch panel application, for example, in applications requiring a thin thickness of the entire display, the thickness of the transparent substrate is preferably 20 μm or more and 50 μm or less.

The total light transmittance of the transparent substrate is preferably high. For example, the total light transmittance is preferably 30% or more, more preferably 60% or more. When the total light transmittance of the transparent substrate is within the above range, for example, when used for a touch panel, the visibility of the display can be sufficiently secured.

On the other hand, the total light transmittance of the transparent substrate can be evaluated by the method specified in JIS K 7361-1.

Next, the metal layer will be described.

The material constituting the metal layer is not particularly limited, and a material having electrical conductivity suitable for the purpose can be selected, but it is preferable to use copper as the material constituting the metal layer in terms of excellent electrical properties and easy etching treatment. do. That is, it is preferable that the metal layer contains copper.

When the metal layer contains copper, the material constituting the metal layer is, for example, a combination of Cu and at least one or more metals selected from Ni, Mo, Ta, Ti, V, Cr, Fe, Mn, Co, and W. It is preferable that it is a copper alloy or a material containing copper and one or more types of metals selected from the above metals. Further, the metal layer may be a copper layer composed of copper.

The method of forming the metal layer is not particularly limited, but is preferably formed without disposing an adhesive between the metal layer and other members so that the light transmittance is not reduced. That is, it is preferable that the metal layer is directly formed on the upper surface of the other member. Meanwhile, the metal layer may be formed on the upper surface of the blackening layer or the transparent substrate. Therefore, it is preferable that the metal layer is directly formed on the upper surface of the blackening layer or the transparent substrate.

In order to directly form a metal layer on the upper surface of another member, it is preferable that the metal layer has a metal thin film layer formed into a film using a dry plating method. The dry plating method is not particularly limited, but, for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. In particular, it is preferable to use the sputtering method in view of the ease of controlling the film thickness.

Further, in the case of making the metal layer thicker, the metal plating layer may be laminated using a wet coating method after forming the metal thin film layer by dry plating. Specifically, for example, a metal thin film layer is formed on a transparent substrate or a blackening layer by a dry plating method, and the metal thin film layer is used as a power supply layer to form a metal plating layer by electrolytic plating, which is a kind of wet plating method. .

On the other hand, as described above, when the metal layer is formed only by the dry plating method, the metal layer can be constituted by a metal thin film layer. In addition, when the metal layer is formed by combining the dry plating method and the wet plating method, the metal layer may be composed of a metal thin film layer and a metal plating layer.

As described above, by forming the metal layer only by the dry plating method or by combining the dry plating method and the wet plating method, the metal layer can be directly formed on the transparent substrate or the blackening layer without passing through an adhesive.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it may be arbitrarily selected depending on the magnitude of current to be supplied to the wiring, width of the wiring, and the like.

However, if the metal layer is thick, side etching tends to occur because etching takes time to form a wiring pattern, resulting in problems such as difficulty in forming thin lines. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

In particular, from the viewpoint of lowering the resistance value of the conductive substrate so that a sufficient current can be supplied, for example, the metal layer preferably has a thickness of 50 nm or more, more preferably 60 nm or more, and even more preferably 150 nm or more. do.

On the other hand, when the metal layer has the metal thin film layer and the metal plating layer as described above, it is preferable that the sum of the thickness of the metal thin film layer and the thickness of the metal plating layer is within the above range.

In either case where the metal layer is composed of a metal thin film layer or a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited, but is preferably, for example, 50 nm or more and 500 nm or less.

Next, the blackening layer is demonstrated.

Since the metal layer has a metallic luster, simply forming the wiring by etching the metal layer on the transparent substrate causes the wiring to reflect light, and, for example, when used as a wiring board for a touch panel, the visibility of the display is reduced. There was a problem. Then, the method of providing a blackening layer has been examined. However, there are cases in which the metal layer and the blackening layer have very different reactivity to the etchant, and if the metal layer and the blackening layer are to be etched at the same time, the metal layer and the blackening layer cannot be etched into a desired shape or the dimensions are jagged. there was Therefore, in the conventionally studied conductive substrate, it is necessary to etch the metal layer and the blackening layer in separate steps, and it is difficult to etch the metal layer and the blackening layer simultaneously, that is, in one step.

Therefore, the inventors of the present invention, a blackening layer that can be etched simultaneously with the metal layer, that is, has excellent reactivity to the etchant, so that even when etched simultaneously with the metal layer, it can be patterned into a desired shape and can suppress jagged dimensions The blackening layer was examined. Thus, the reactivity of the blackening layer to the etchant can be made almost the same as that of the metal layer, because the blackening layer contains a single element and/or compound of copper and a single element and/or compound of nickel, and the copper compound contains copper oxide and copper hydroxide. It was discovered that it could be done, and the present invention was completed.

As described above, the blackening layer of the conductive substrate of the present embodiment contains a copper element and compound and a nickel element and/or compound, and may contain copper oxide and copper hydroxide as a copper compound.

Here, the compound of nickel contained in the blackening layer is not particularly limited, but examples thereof include oxides and/or hydroxides. Therefore, the blackening layer may contain, for example, simple copper, copper oxide, and copper hydroxide, and further contain one or more types selected from simple nickel, nickel oxide, and nickel hydroxide.

As described above, when the blackening layer contains copper hydroxide, the blackening layer becomes a color that can suppress light reflection on the surface of the metal layer, and can exhibit the function as the blackening layer. In addition, especially by containing a compound of nickel, for example, an oxide of nickel, reflection of light on the surface of the metal layer can be suppressed, and the function as a blackening layer can be improved.

And by further containing copper oxide, the reactivity with respect to an etchant can be improved, and it can have etchant reactivity substantially equivalent to that of a metal layer.

The ratio of each component included in the blackening layer is not particularly limited, and can be arbitrarily selected depending on the degree of light reflection suppression required of the conductive substrate, the degree of reactivity to the etching solution, and the like, and is not particularly limited. However, according to the study of the inventors of the present invention, since the reactivity to the etching solution is sufficiently improved, for example, when the blackening layer is measured by X-ray photoelectron spectroscopy (XPS), copper oxide can be identified as a peak. It is preferable that it is included in the blackening layer to the extent possible.

In particular, when the blackening layer is measured by X-ray photoelectron spectroscopy (XPS), the sum of the peak area of copper oxide and the peak area of copper hydroxide obtained using the Cu2P _{3 /2} spectrum and the Cu LMM spectrum is set to 100 It is preferable that the peak area (area ratio) of copper oxide is 40 or more and the peak area (area ratio) of copper hydroxide is 60 or less.

That is, _the peak area ratio of copper oxide to the peak area of copper oxide and copper hydroxide determined using the Cu2P _3/2 spectrum and the Cu LMM spectrum when the blackening layer is measured by XPS is preferably 40 or more. Moreover, it is preferable that the peak area ratio of copper hydroxide is 60 or less.

This is because the function of suppressing light reflection as a blackening layer and especially the reactivity to an etchant can be made compatible by containing copper oxide and copper hydroxide in a predetermined ratio in the blackening layer.

The formation method of the blackening layer is not particularly limited, and any method can be selected as long as it can be formed so as to contain each of the above-mentioned components. However, it is preferable to use the sputtering method from the viewpoint that the composition of the blackening layer can be relatively easily controlled so as to contain the aforementioned components.

On the other hand, the blackening layer is preferably directly formed on the upper surface of another member such as a transparent substrate and/or a metal layer without using an adhesive. And by forming a blackening layer into a film by a dry plating method, a blackening layer can be directly formed on the upper surface of another member, without passing through an adhesive agent. Therefore, also from this point of view, the method for forming the blackened layer is preferably a sputtering method.

When forming the blackening layer of the conductive substrate of this embodiment by a sputtering method, an alloy target containing nickel and copper can be used. On the other hand, when the blackening layer does not contain anything other than nickel and copper as metal components, an alloy target made of nickel and copper can be used.

Then, the blackening layer can be formed by sputtering using the target while supplying oxygen gas and water vapor into the chamber. Thereby, as a copper compound, it is possible to form a blackening layer containing copper oxide derived from oxygen gas supplied into the chamber and copper in the target, and copper hydroxide derived from water vapor supplied into the chamber and copper in the target.

At this time, the ratio of the components contained in the blackening layer can be selected by selecting the ratio of the oxygen gas and water vapor supplied into the chamber.

In particular, in the chamber, it is preferable to simultaneously supply an inert gas, oxygen gas, and water vapor to adjust respective partial pressures so as to conveniently adjust the amounts of oxygen and water vapor supplied to the blackening layer. On the other hand, the inert gas is not particularly limited, but preferably, argon, helium, or the like can be used. In addition, water vapor can be supplied as a mixed gas with an inert gas.

As described above, the supply ratios of the inert gas, oxygen gas, and water vapor supplied to the chamber when the blackening layer is formed are not particularly limited, and can be arbitrarily selected according to the target composition of the blackening layer.

For example, when a preliminary test or the like is performed and the formed blackening layer is measured by X-ray photoelectron spectroscopy (XPS), the ratio of the peak areas of each component determined using the Cu2P _3/2 spectrum and the Cu LMM _spectrum is described above. As described above, the supply condition of each gas can be selected so as to be in an appropriate range as needed.

The thickness of the blackening layer is not particularly limited and can be arbitrarily selected according to the degree of suppression of light reflection required of the conductive substrate.

It is preferable that it is 5 nm or more, and, as for the thickness of blackening layer, it is more preferable in it being 20 nm or more, for example. The blackening layer has a function of suppressing light reflection by the metal layer, but when the thickness of the blackening layer is thin, light reflection by the metal layer may not be sufficiently suppressed. On the other hand, since the reflection on the surface of a metal layer can be suppressed more reliably by making the thickness of a blackening layer into 5 nm or more, it is preferable.

In addition, the upper limit of the thickness of the blackening layer is not particularly limited, but if it is thicker than necessary, the time required for etching when forming the wiring becomes longer, resulting in an increase in cost. Therefore, the thickness of the blackening layer is preferably 100 nm or less, and more preferably 50 nm or less.

Next, a configuration example of the conductive substrate will be described.

As described above, the conductive substrate of the present embodiment may have a transparent substrate, a metal layer, and a blackening layer. At this time, the order of lamination of the metal layer and the blackening layer on the transparent substrate is not particularly limited. In addition, a metal layer and a blackening layer can also be formed in multiple layers, respectively. However, in order to suppress light reflection on the surface of the metal layer, it is preferable to dispose the blackening layer on the surface of the metal layer on which light reflection is to be particularly suppressed. When it is required to greatly suppress light reflection on the surface of the metal layer, a laminated structure in which blackening layers are formed on the upper and lower surfaces of the metal layer, that is, a structure in which the metal layer is sandwiched between the blackening layers may be used.

A specific configuration example will be described below using FIGS. 1A, 1B, 2A, and 2B. 1A, 1B, 2A, and 2B show examples of cross-sectional views taken along a plane parallel to the lamination direction of the transparent substrate, the metal layer, and the blackening layer of the conductive substrate of the present embodiment.

The conductive substrate of the present embodiment may have, for example, a structure in which a metal layer and a blackening layer are laminated in this order on at least one surface of the transparent substrate from the side of the transparent substrate.

Specifically, for example, as in the conductive substrate 10A shown in FIG. 1A, the metal layer 12 and the blackening layer 13 are laminated one by one in the order of one side 11a of the transparent substrate 11. can do. In addition, as in the conductive substrate 10B shown in FIG. 1B, metal layers 12A and 12B are formed on one side 11a and the other side (the other side) 11b of the transparent substrate 11, respectively. Layers 13A and 13B may be stacked one by one in the order. On the other hand, the order of laminating the metal layers 12:12A and 12B and the blackening layers 13:13A and 13B is not limited to the example of FIGS. 1A and 1B, and the blackening layer 13 from the transparent substrate 11 side. 13A, 13B) and metal layers 12: 12A, 12B may be laminated in this order.

Further, for example, a blackening layer may be provided with a plurality of layers on one surface side of the transparent substrate 11 . In this case, for example, it can be set as a structure formed on at least one side of the transparent substrate in the order of a blackening layer, a metal layer, and a blackening layer from the transparent substrate side.

Specifically, for example, as in the conductive substrate 20A shown in FIG. 2A, a first blackening layer 131, a metal layer 12, and a second blackening layer are provided on one surface 11a side of the transparent substrate 11. Layers 132 may be stacked in sequence.

Also in this case, it can also be set as the structure which laminated|stacked the metal layer, the 1st blackening layer, and the 2nd blackening layer on both surfaces of the transparent base material 11. Specifically, as in the conductive substrate 20B shown in FIG. 2B, the first blackening layer 131A is on one side 11a side and another side (the other side 11b) side of the transparent substrate 11, respectively. , 131B), the metal layers 12A and 12B, and the second blackening layers 132A and 132B may be stacked in this order.

On the other hand, in FIGS. 1B and 2B, in the case where the metal layer and the blackening layer are laminated on both sides of the transparent substrate, the transparent substrate 11 is used as a symmetry plane, and the layers stacked on top and bottom of the transparent substrate 11 are arranged so that they are symmetrical Examples have been shown, but are not limited to these forms. For example, in FIG. 2B, the configuration on the side of one side 11a of the transparent substrate 11 is set to a form in which a copper layer 12 and a blackening layer 13 are laminated in this order similarly to the configuration in FIG. 1A, Layers laminated on top and bottom of the substrate 11 can also be made into an asymmetric configuration.

Although the conductive substrate of this embodiment has been described so far, in the conductive substrate of this embodiment, since the metal layer and the blackening layer are provided on the transparent substrate, light reflection on the surface of the metal layer can be suppressed.

The degree of light reflection of the conductive substrate of this embodiment is not particularly limited, but, for example, when used as a conductive substrate for a touch panel, in order to suppress wiring visibility in a display, a lower reflectance is preferable. For example, the average reflectance (regular reflectance) of light having a wavelength of 400 nm or more and 700 nm or less is preferably 40% or less, more preferably 30% or less, and particularly preferably 20% or less.

The reflectance can be measured by irradiating light to the blackened layer of the conductive substrate. Specifically, for example, when the metal layer 12 and the blackening layer 13 are laminated in this order on one surface 11a side of the transparent substrate 11 as shown in FIG. 1A, the blackening layer 13 It can be measured by irradiating light to the surface (A) of the blackening layer 13 so as to irradiate. In the measurement, light having a wavelength of 400 nm or more and 700 nm or less is irradiated to the blackening layer 13 of the conductive substrate as described above at intervals of, for example, a wavelength of 1 nm, and the average of the measured values is It can be set as the average of the reflectance of the conductive substrate.

As described above, the conductive substrate of the present embodiment can be preferably used as a conductive substrate for a touch panel, for example. In this case, the conductive substrate can have a structure provided with mesh-shaped wiring.

A conductive substrate with mesh-shaped wiring can be obtained by etching the metal layer and blackening layer of the conductive substrate of the present embodiment described above.

For example, it can be set as a mesh-shaped wiring by a 2-layer wiring. A specific configuration example is shown in FIG. 3 . Fig. 3 shows a view of the conductive substrate 30 provided with mesh-like wiring as viewed from the upper surface side in the lamination direction of the metal layer and the blackening layer.

The conductive substrate 30 shown in FIG. 3 has a transparent substrate 11, a plurality of wirings 31A parallel to the Y-axis direction in the drawing, and wiring 31B parallel to the X-axis direction. On the other hand, the wirings 31A and 31B are formed by etching a metal layer, and blackening layers (not shown) are formed on the upper and/or lower surfaces of the wirings 31A and 31B. The blackening layer is etched into the same shape as the wirings 31A and 31B. In addition, in the figure, the wiring 31B visible through the transparent substrate 11 is also shown.

The arrangement of the transparent substrate 11 and the wirings 31A and 31B is not particularly limited. An example of arrangement of the transparent substrate 11 and wiring is shown in FIGS. 4A and 4B. 4A and 4B correspond to cross-sectional views taken along line A-A` of FIG. 3 .

First, as shown in FIG. 4A , wirings 31A and 31B may be disposed on the upper and lower surfaces of the transparent substrate 11, respectively. On the other hand, in FIG. 4A, blackening layers 32A and 32B etched into the same shape as the wiring are disposed on the upper surface of the wiring 31A and the lower surface of the wiring 31B.

Further, as shown in FIG. 4B, a pair of transparent substrates 11 are used, and wirings 31A and 31B are arranged on the upper and lower surfaces with one transparent substrate 11 interposed therebetween, and further, one wiring 31B The silver may be disposed between the transparent substrates 11 . Also in this case, blackening layers 32A and 32B etched into the same shape as the wirings are disposed on the upper surfaces of the wirings 31A and 31B. On the other hand, as already described, the arrangement of the blackening layer and the metal layer is not limited. Accordingly, in the case of Figs. 4A and 4B, the arrangement of the blackening layers 32A and 32B and the wirings 31A and 31B may be reversed upside down. Moreover, it is also possible to provide a plurality of blackening layers, such as further providing a blackening layer between the wirings 31A and 31B and the transparent substrate 11, for example.

However, it is preferable that the blackening layer is disposed on a surface of the metal layer where light reflection is to be particularly suppressed. Therefore, in the conductive substrate shown in FIG. 4B, for example, when it is necessary to suppress the reflection of light coming from the lower surface side in the figure, the positions of the blackening layers 32A and 32B and the positions of the wirings 31A and 31B are determined. It is preferable to reverse each. In addition to the blackening layers 32A and 32B, blackening layers may be provided between the wirings 31A and 31B and the transparent substrate 11, respectively.

The conductive substrate with mesh-shaped wiring shown in FIGS. 3 and 4A includes, for example, metal layers 12A and 12B and blackening layers 13A and 13B on both sides of a transparent substrate 11, as shown in FIG. 1B. It can be formed with a single conductive substrate.

Taking the case of formation using the conductive substrate of FIG. 1B as an example, first, the metal layer 12A and the blackening layer 13A on one surface 11a side of the transparent substrate 11 are formed on the Y-axis in FIG. 1B. Etching is performed so that a plurality of line-shaped patterns parallel to the direction are arranged at predetermined intervals along the X-axis direction. On the other hand, the X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. In addition, the Y-axis direction in FIG. 1B means a direction perpendicular to the paper in FIG. 1B.

Then, the metal layer 12B and the blackening layer 13B on the side of the other one surface 11b of the transparent substrate 11 are formed by forming a plurality of linear patterns parallel to the X-axis direction in FIG. 1B at predetermined intervals. Etched to be disposed along the Y-axis direction.

Through the above operation, the conductive substrate having the mesh-like wiring shown in Figs. 3 and 4A can be formed. On the other hand, both sides of the transparent substrate 11 may be etched simultaneously. That is, etching of the metal layers 12A and 12B and the blackening layers 13A and 13B may be performed simultaneously. In FIG. 4A, the conductive substrate further having a blackening layer patterned into the same shape as the wirings 31A and 31B between the wirings 31A and 31B and the transparent substrate 11 is obtained by using the conductive substrate shown in FIG. 2B. Similarly, it can be manufactured by etching.

The conductive substrate with mesh-shaped wiring shown in FIG. 3 can also be formed using two conductive substrates shown in FIG. 1A or 2A. Referring to the case where two conductive substrates shown in FIG. 1A are used as an example, a plurality of metal layers 12 and blackening layers 13 are formed on the two conductive substrates shown in FIG. 1A, respectively, in parallel to the X-axis direction. Etching is performed so that linear patterns are disposed along the Y-axis direction at predetermined intervals. Then, by aligning the directions so that the linear patterns formed on the respective conductive substrates by the above etching process intersect each other, the two conductive substrates are bonded together, so that a conductive substrate having mesh-like wiring can be obtained. The surfaces to be bonded when bonding the two conductive substrates together are not particularly limited. For example, the structure shown in FIG. 4B by bonding the surface A in FIG. 1A on which the metal layer 12 and the like are laminated and the surface 11b in FIG. may make it so.

On the other hand, the blackening layer is preferably disposed on the surface of the metal layer where light reflection is to be particularly suppressed. Therefore, in the conductive substrate shown in FIG. 4B, when it is necessary to suppress reflection of light coming from the lower surface side in the figure, the positions of the blackening layers 32A and 32B and the positions of the wirings 31A and 31B are reversed. desirable. In addition to the blackening layers 32A and 32B, a blackening layer may be further provided between the wirings 31A and 31B and the transparent substrate 11 .

Further, for example, surfaces 11b of FIG. 1A on which the metal layer 12 or the like of the transparent substrate 11 is not laminated may be bonded to each other so that the cross section has a structure shown in FIG. 4A.

On the other hand, the wiring width, the distance between wirings, and the like in the conductive substrate having the mesh-shaped wiring shown in FIGS. 3, 4A, and 4B are not particularly limited, and can be selected according to, for example, the amount of current to flow through the wiring. .

3, 4A, and 4B show an example in which a mesh-shaped wiring (wiring pattern) is formed by combining linear wiring, but it is not limited to this form, and the wiring constituting the wiring pattern is It can be made into any shape. For example, in order to prevent moiré (interference fringes) from occurring between the display image and the wire pattern constituting the mesh-like wiring pattern, various shapes such as jaggedly curved lines (zigzag straight lines) may be used.

A conductive substrate having mesh-shaped wiring composed of two layers of wiring in this way can be preferably used as, for example, a conductive substrate for a projected capacitive type touch panel.

(Method of manufacturing conductive substrate)

Next, a configuration example of the conductive substrate manufacturing method of the present embodiment will be described.

The conductive substrate manufacturing method of the present embodiment may include a metal layer forming step of forming a metal layer on at least one side of the transparent substrate and a blackening layer forming step of forming a blackening layer on at least one side of the transparent substrate.

And in the blackening layer formation process, the blackening layer containing copper simple substance and compound, and nickel simple substance and/or compound, and a copper compound containing copper oxide and copper hydroxide can be formed into a film.

In addition, in the blackening layer formation step, when the sum of the peak area of copper oxide and the peak area of _copper hydroxide determined using the Cu2P _3/2 spectrum and the Cu LMM spectrum when measured by X-ray photoelectron spectroscopy (XPS) is 100. Then, the blackening layer can be formed so that the peak area of copper oxide may be 40 or more and the peak area of copper hydroxide may be 60 or less.

The conductive substrate manufacturing method of this embodiment will be described below, but the previously described conductive substrate can be appropriately manufactured according to the conductive substrate manufacturing method of this embodiment. Therefore, except for the points described below, the description is omitted since it can be set as the same configuration as the case of the conductive substrate described above.

On the other hand, as described above, in the conductive substrate of the present embodiment, the lamination order when arranging the metal layer and the blackening layer on the transparent substrate is not particularly limited. In addition, the metal layer and the blackening layer may be formed of a plurality of layers, respectively. Therefore, there is no particular limitation on the order and frequency of performing the metal layer forming step and the blackening layer forming step, and the number of steps and the number of steps can be carried out at any time according to the structure of the conductive substrate to be formed.

Each process is demonstrated below.

First, the metal layer formation process is explained.

In the metal layer forming step, a metal layer can be formed on at least one side of the transparent substrate.

On the other hand, the type of transparent substrate used in the metal layer forming process or the blackening layer forming process is not particularly limited, but preferably, as described above, a resin substrate (resin film) that transmits visible light, a glass substrate, or the like can be used. there is. The transparent substrate may be previously cut into arbitrary sizes as needed.

And, as described above, the metal layer preferably has a metal thin film layer. Also, the metal layer may include a metal thin film layer and a metal plating layer. Thus, the metal layer forming process may include, for example, a process of forming a metal thin film layer by a dry plating method. Further, the metal layer forming step may include a step of forming a metal thin film layer by a dry plating method and a step of forming a metal plating layer by an electroplating method, which is a kind of wet plating method, using the metal thin film layer as a power supply layer.

The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, or an ion plating method can be used. On the other hand, as the vapor deposition method, preferably, a vacuum vapor deposition method can be used. As the dry plating method used in the process of forming the metal thin film layer, it is more preferable to use the sputtering method in that the film thickness can be easily controlled.

The metal thin film layer can be appropriately formed as needed using, for example, a roll-to-roll sputtering device.

Hereinafter, a process of forming a metal thin film layer will be described by taking a case where a roll-to-roll sputtering device is used as an example.

5 shows an example of a configuration of a roll-to-roll sputtering device 50.

The roll-to-roll sputtering device 50 includes a case 51 that houses most of its constituent parts.

Inside the case 51, an unwinding roll 52 for supplying a substrate for forming a metal thin film layer, a can roll 53, sputtering cathodes 54a to 54d, a winding roll 55, and the like are provided. Further, guide rolls, heaters 56, and the like may be arbitrarily provided in addition to the rolls described above on the conveyance path of the substrate on which the metal thin film layer is formed.

The configuration of the can roll 53 is also not particularly limited, but for example, the surface is treated with hard chrome plating, and the refrigerant or warming medium supplied from the outside of the case 51 circulates inside the can roll 53 to approximately It is preferable to be configured so that it can be adjusted to a constant temperature.

The sputtering cathodes 54a to 54d are preferably disposed facing the can roll 53 in a magnetron cathode manner. Although the size of the sputtering cathodes 54a to 54d is not particularly limited, the width direction of the substrate on which the metal thin film layer of the sputtering cathode 54a to 54d is formed is preferably wider than the width of the substrate on which the metal thin film layer is formed.

The substrate for forming the metal thin film layer is conveyed into the roll-to-roll sputtering device 50, which is a roll-to-roll vacuum film forming device, and the metal thin film layer is formed on the sputtering cathodes 54a to 54d facing the can roll 53.

When a metal thin film layer is formed using the roll-to-roll sputtering device 50, a target corresponding to a composition to be formed is mounted on the sputtering cathodes 54a to 54d. Then, after vacuum pumps 57a and 57b evacuate the inside of the apparatus in which the substrate for forming the metal thin film layer is set on the unwinding roll 52, sputtering gas such as argon is supplied to the case 51 by the gas supply means 58. ) can be introduced into The configuration of the gas supply means 58 is not particularly limited, but may have a gas storage tank (not shown). In addition, a mass flow controller (MFC, 581a, 581b) and valves 582a, 582b are provided for each gas type between the gas storage tank and the case 51, so that each gas is supplied into the case 51 It can be configured to control the quantity. 5 shows an example in which a mass flow controller and two pairs of valves are provided, but the number to be installed is not particularly limited, and the number to be installed can be selected according to the number of types of gases to be used. When supplying the sputtering gas into the case 51, by adjusting the flow rate of the sputtering gas and the opening degree of the pressure regulating valve 59 provided between the vacuum pump 57b and the case 51, the inside of the device, for example, , It is preferable to carry out film formation in a state where it is maintained at 0.13 Pa or more and 1.3 Pa or less.

In this state, while transporting the substrate from the unwinding roll 52 at a speed of, for example, 0.5 m to 0 m per minute, sputtering discharge is performed by supplying electric power from a DC power supply for sputtering connected to the sputtering cathodes 54a to 54d. do. In this way, a desired metal thin film layer can be continuously formed on the substrate.

On the other hand, the roll-to-roll sputtering device 50 may be provided with arbitrary members other than the above-mentioned members. For example, as shown in FIG. 5 , vacuum gauges 60a and 60b and vent valves 61a and 61b for measuring the degree of vacuum in the case 51 may be provided.

Next, the process of forming a metal plating layer is demonstrated. Conditions in the process of forming a metal plating layer by a wet plating method, that is, electroplating treatment conditions are not particularly limited, and various conditions according to a conventional method may be employed. For example, a metal plating layer can be formed by supplying a base material on which a metal thin film layer is formed to a plating bath containing a metal plating solution, and controlling current density, base material transport speed, and the like.

Next, the blackening layer formation process is demonstrated.

As explained above, the blackening layer formation process is a process of forming a blackening layer into a film on at least one surface side of a transparent substrate. The film formation means of the blackening layer is not particularly limited, but sputtering can be appropriately used as needed. This is because, according to the sputtering method, a layer containing a simple substance and compound of copper and a simple substance and/or compound of nickel and the copper compound being copper oxide and copper hydroxide can be formed relatively easily.

When the blackening layer is formed into a film by the sputtering method, the roll-to-roll sputtering device 50 described above can be used, for example. Since the configuration of the roll-to-roll sputtering device has been described above, the description is omitted here.

When the blackening layer is formed using the roll-to-roll sputtering device 50, for example, an alloy target containing nickel and copper is attached to the sputtering cathodes 54a to 54d. Then, the inside of the apparatus in which the substrate on which the blackening layer is to be formed is set on the unwinding roll 52 is evacuated by vacuum pumps 57a and 57b.

After that, a sputtering gas containing oxygen gas and water vapor is introduced into the case 51 by the gas supply means 58. At this time, by adjusting the flow rate of the sputtering gas and the opening degree of the pressure regulating valve 59 provided between the vacuum pump 57b and the case 51, the inside of the device is set to, for example, 0.13 Pa or more and 13 Pa or less. It is preferable to carry out the film formation in a maintained state.

On the other hand, in the case 51, it is preferable to simultaneously supply an inert gas, oxygen gas, and water vapor, and adjust the respective partial pressures so as to make it easy to adjust the amount of oxygen and water vapor supplied to the blackening layer. Therefore, the sputtering gas preferably contains inert gas, oxygen gas and water vapor. The inert gas is not particularly limited, and argon, helium, or the like can be used preferably. In addition, water vapor can be supplied as a mixed gas with an inert gas.

The ratio of oxygen gas and water vapor in the sputtering gas is not particularly limited and can be selected according to the composition of the blackening layer to be formed.

For example, when the formed blackening layer is measured by X-ray photoelectron spectroscopy (XPS), the sum of the peak area of copper oxide and the peak area of copper hydroxide obtained using the Cu2P _3/2 spectrum and the Cu LMM spectrum is 100 In this case, it is preferable that the peak area of copper oxide is 40 or more and the peak area of copper hydroxide is 60 or less. Therefore, it is preferable to adjust the supply amount of each gas so that the measurement result of the X-ray photoelectron spectroscopy for the formed blackening layer is the above result.

Further, when forming the blackening layer, it is preferable to adjust the arrangement of the gas supply piping so that the copper oxide and copper hydroxide in the blackening layer are in the desired ranges, for example, in the above-mentioned desired range over the entire width direction of the conductive substrate. .

In this state, while transporting the substrate from the unwinding roll 52 at a speed of, for example, 0.5 m to 10 m per minute, power is supplied from a DC power supply for sputtering connected to the sputtering cathodes 54a to 54d to perform sputtering discharge. do. Thereby, a desired blackening layer can be continuously formed on the substrate.

And, the conductive substrate obtained by the conductive substrate manufacturing method described here can be used as a conductive substrate provided with mesh-shaped wiring. In this case, in addition to the process described above, an etching process of forming a wiring by etching the metal layer and the blackening layer may be further included.

In this etching process, for example, first, a resist having an opening corresponding to a portion to be removed by etching is formed on the outermost surface of the conductive substrate. In the case of the conductive substrate shown in Fig. 1A, a resist can be formed on the surface A where the blackening layer 13 disposed on the conductive substrate is exposed. On the other hand, the method of forming a resist having an opening corresponding to a portion to be removed by etching is not particularly limited, but may be formed by a method similar to that of the prior art, such as a photolithography method, for example.

Next, the metal layer 12 and the blackening layer 13 can be etched by supplying an etchant from the upper surface of the resist.

On the other hand, when the metal layer and the blackening layer are disposed on both sides of the transparent substrate 11 as shown in FIG. 1B, a resist having an opening of a predetermined shape is formed on the surfaces A and B of the conductive substrate, respectively, and the transparent substrate ( The metal layers 12A and 12B and the blackened layers 13A and 13B formed on both surfaces of 11) may be etched simultaneously.

In addition, the metal layers 12A and 12B and the blackening layers 13A and 13B formed on both sides of the transparent substrate 11 may be etched one by one. That is, for example, after etching the metal layer 12A and the blackening layer 13A, the metal layer 12B and the blackening layer 13B may be etched.

Since the blackening layer formed on the conductive substrate of the present embodiment exhibits the same etchant reactivity as the metal layer, the etchant used in the etching step is not particularly limited, and preferably, an etchant generally used for etching the metal layer is used. can be used As the etchant, more preferably, for example, a mixed aqueous solution of ferric chloride and hydrochloric acid can be used. The content of ferric chloride and hydrochloric acid in the etchant is not particularly limited, but, for example, it is preferable to include ferric chloride in a ratio of 5% by weight or more and 50% by weight or less, and a ratio of 10% by weight or more and 30% by weight or less. It is more preferable to include as Further, the etchant preferably contains, for example, hydrochloric acid in an amount of 1 wt% or more and 50 wt% or less, and more preferably 1 wt% or more and 20 wt% or less. On the other hand, water can be used for the remaining parts.

The etchant may be used at room temperature, but may be used at elevated temperature to increase reactivity. For example, it may be used by heating to 40°C or higher and 50°C or lower.

Since the specific form of the mesh-shaped wiring obtained by the etching process described above is the same as described above, description thereof is omitted here.

In addition, as described above, when two conductive substrates having a metal layer and a blackening layer are bonded together on one side of the transparent substrate 11 shown in FIGS. 1A and 2A to form a conductive substrate with mesh wiring, , may further include a step of pasting the conductive substrate together. At this time, the method of pasting the two conductive substrates together is not particularly limited, and can be bonded using an adhesive or the like, for example.

In the above, the conductive substrate and the conductive substrate manufacturing method of the present embodiment have been described. According to such a conductive substrate, the reactivity to the etching solution is excellent also to the blackening layer, and the metal layer and the blackening layer can exhibit substantially the same reactivity to the etching solution. Thus, in the case where the metal layer and the blackening layer are etched simultaneously, the metal layer and the blackening layer can be patterned into desired shapes to suppress jaggedness in dimensions. Therefore, the metal layer and blackening layer can be etched simultaneously.

Further, the blackening layer can suppress light reflection by the metal layer, and can suppress light reflection on the wiring surface to improve the visibility of the display, for example, when used as a conductive substrate for a touch panel.

[Example]

Hereinafter, specific examples and comparative examples will be described, but the present invention is not limited to these examples.

(Assessment Methods)

In Examples and Comparative Examples, samples prepared were evaluated by the following method.

(1) Measurement by X-ray photoelectron spectroscopy (XPS)

The measurement was performed with an X-ray photoelectron spectrometer (manufactured by PHI, type: QuantaSXM). In addition, as an X-ray source, monochromatic AI (1486.6 eV) was used.

As will be described later, in each of the following Examples and Comparative Examples, conductive substrates having the structure of FIG. 2A were fabricated. Therefore, in FIG. 2A , _the surface 132a exposed to the outside of the second blackening layer 132 was etched with Ar ion, and the Cu2P _3/2 spectrum and the Cu LMM spectrum within 10 nm from the outermost surface were measured. From the obtained spectrum, the peak area of copper oxide and the peak area of copper hydroxide were calculated when the sum of the peak area of copper oxide and the peak area of copper hydroxide was 100. That is, the peak area ratio of copper oxide and the peak area ratio of copper hydroxide with respect to copper oxide and copper hydroxide were calculated.

(2) Reflectance measurement

The measurement was performed using a spectrophotometer (model: UV-2600 manufactured by Shimadzu Corporation) by a specular reflection method at an incident angle of 5°, and the average reflectance of light in a range of 400 nm or more and 700 nm or less in wavelength was determined. Specifically, light with a wavelength in the range of 400 nm to 700 nm is irradiated with the wavelength changed at intervals of 1 nm, the reflectance at each wavelength is measured, and the average is calculated. It was set as the reflectance average of the following light. On the other hand, in Table 1, it is simply described as reflectance.

In each of the following Examples and Comparative Examples, conductive substrates having the structure of FIG. 2A were fabricated. Thus, the reflectance of the externally exposed surface 132a of the second blackening layer 132 in FIG. 2A was measured.

(3) Etching test

In the etching test, an etchant consisting of 10% by weight of ferric chloride, 1% by weight of hydrochloric acid, and the remaining part with water was used.

The conductive substrate produced in each Example and Comparative Example was immersed in an etchant at a temperature of 25° C. for 60 seconds without forming a resist or the like, and then taken out from the etchant. Then, it was washed with water to sufficiently wash away the etchant adhering to the conductive substrate.

After being immersed in an etching solution and then washed with water, the conductive substrate was observed with the naked eye, and the presence or absence of a metal layer and blackening layer remaining on the transparent substrate was observed.

When the metal layer and the blackening layer do not remain, that is, when no dross is confirmed, it indicates that the substrate is a conductive substrate provided with a metal layer and a blackening layer that can be etched at the same time. On the other hand, when at least either one of the metal layer and the blackening layer remains, that is, when the dregs are confirmed, it indicates that the deposited metal layer and the blackening layer cannot be etched at the same time.

(Conditions for sample production)

Conductive substrates were produced under the conditions described below as examples and comparative examples, and evaluated by the above-described evaluation method.

[Example 1]

A conductive substrate having a structure shown in FIG. 2A was fabricated.

(Blackening layer formation process)

First, a long transparent substrate made of polyethylene terephthalate resin (PET) having a width of 500 mm and a thickness of 100 µm was set on the unwinding roll 52 of the roll-to-roll sputtering device 50 shown in FIG. 5 . On the other hand, when the total light transmittance of the polyethylene terephthalate resin transparent substrate used as the transparent substrate was evaluated by the method specified in JIS K 7361-1, it was 97%.

Further, nickel-copper alloy targets containing 65 wt% of nickel and 35 wt% of copper were set on the sputtering cathodes 54a to 54d.

Subsequently, the heater 56 of the roll-to-roll sputtering device 50 was heated to 100° C., and the transparent substrate was heated to remove moisture contained in the substrate.

Next, after exhausting the inside of the case 51 to 1×10 ^-4 Pa, argon gas, oxygen gas, and water vapor were introduced into the case 51 . On the other hand, water vapor is introduced as argon gas containing saturated moisture at room temperature. Argon gas, oxygen gas, and argon gas containing water (argon/moisture mixed gas) were supplied into the case 51 in an amount shown in Table 1, and the pressure inside the case 51 was adjusted to 2 Pa.

Then, while conveying the transparent substrate from the unwinding roll 52 at a speed of 2 m per minute, electric power is supplied from a DC power source for sputtering connected to the sputtering cathodes 54a to 54d to perform sputtering discharge, and a blackening layer is formed on the transparent substrate. was continuously formed. By this operation, the first blackening layer 131 was formed on the transparent substrate to a thickness of 20 nm.

On the other hand, when forming the first blackening layer, sputtering was performed by introducing argon gas, oxygen gas, and water vapor into the case 51 using a nickel-copper alloy target as described above. Thus, the first blackening layer contains a single element and compound of copper and a single element and/or compound of nickel.

(Metal layer formation process)

Next, the transparent substrate on which the first blackening layer was formed was set on the unwinding roll 52, and the target set on the sputtering cathodes 54a to 54d was changed to a copper target. Then, after evacuating the inside of the case 51 of the roll-to-roll sputtering device 50 to 1×10 ^-4 Pa, only argon gas was introduced into the case 51 to adjust the pressure to 0.3 Pa, except that the pressure was adjusted to 0.3 Pa. As in the case of the blackening layer, a copper thin film layer was formed on the upper surface of the first blackening layer as a metal thin film layer to a thickness of 80 nm.

After forming the copper thin film layer, a copper plating layer having a thickness of 0.5 μm was further formed into a film by an electrolytic plating method. On the other hand, when forming a copper plating layer, the copper thin film layer was used as a power supply layer.

(Blackening layer formation process)

Next, the transparent substrate formed by forming the first blackening layer and the metal layer is set on the unwinding roll 52, and the second blackening layer 132 is formed on the upper surface of the metal layer 12 under the same conditions as the first blackening layer 131. did

For the sample of the prepared conductive substrate, measurement by the above-described X-ray photoelectron spectroscopy (XPS), reflectance measurement, and evaluation of the etching test were performed. The results are shown in Table 1.

[Examples 2 to 4]

When forming the first blackening layer and the second blackening layer, the flow rates of argon gas, oxygen gas, and argon gas containing water (argon/moisture mixture gas) supplied into the case 51 were set to the values shown in Table 1. Other than that, in the same manner as in Example 1, a conductive substrate was produced and evaluated.

The results are shown in Table 1.

[Comparative Example 1, Comparative Example 2]

When forming the first blackening layer and the second blackening layer, the flow rates of argon gas, oxygen gas, and argon gas containing water (argon/moisture mixture gas) supplied into the case 51 were set to the values shown in Table 1. Other than that, in the same manner as in Example 1, a conductive substrate was produced and evaluated.

The results are shown in Table 1.

According to the results shown in Table 1, when the blackening layer was evaluated by XPS for the samples of Examples 1 to 4, peaks of copper alone, copper oxide, and copper hydroxide were confirmed, confirming that each component was contained. there was.

In addition, in the samples of Examples 1 to 4, it was confirmed that the peak area ratio of copper oxide determined from the result of measuring the blackening layer by XPS was in the range of 40 or more and the peak area ratio of copper hydroxide was in the range of 60 or less. .

And, as a result of the etching test, it was confirmed that there was no dross in either case.

Further, in Examples 1 to 4, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less was 40.0% or less, confirming that the blackening layer could sufficiently suppress light reflection on the surface of the metal layer.

On the other hand, in the samples of Comparative Examples 1 and 2, when the blackening layer was evaluated by XPS, peaks of copper alone, copper oxide, and copper hydroxide were confirmed, confirming that each component was contained.

However, it was confirmed that the peak area ratios of copper oxide obtained from the results of measuring the blackening layer by XPS were 39 and 30, both of which were less than 40, and the peak area ratios of copper hydroxide were 61 and 70, which exceeded 60.

And when the etching test was performed, the dregs of the blackening layer were recognized on the PET film. That is, it was confirmed that the blackened layer formed on the conductive substrates of Comparative Examples 1 and 2 had low reactivity to the etchant, so that the blackened layer and the metal layer could not be etched simultaneously.

As described above, the blackening layer contains copper alone, copper oxide and copper hydroxide, and nickel alone and/or compound, and the peak area ratio of copper oxide and copper hydroxide calculated from the measurement result by XPS is within a predetermined range. In this case, it was confirmed that good reactivity to the etchant was exhibited. That is, it was confirmed that the blackening layer and the metal layer could be etched simultaneously.

Although the conductive substrate has been described in the embodiments and examples above, the present invention is not limited to the above embodiments and examples. Various modifications and changes are possible within the scope of the subject matter of the present invention described in the claims.

This application claims priority based on Japanese Patent Application No. 2015-195199 filed with the Japan Patent Office on September 30, 2015, and the entire contents of Japanese Patent Application No. 2015-195199 are incorporated herein by reference.

10A,10B,20A,20B,30 Conductive substrate
11 transparent substrate
12,12A,12B metal layer
13, 13A, 13B, 131, 132, 131A, 131B, 132A, 132B, 32A, 32B blackening layer
31A, 31B wiring

Claims (7)

a transparent substrate,
A metal layer formed on at least one side of the transparent substrate;
A blackening layer formed on at least one side of the transparent substrate,
The blackening layer contains a copper element and a copper compound, and further contains at least one of a nickel element and a nickel compound,
The compound of copper includes copper oxide and copper hydroxide,
When the blackening layer is measured by X-ray photoelectron spectroscopy, when the sum of the peak area of copper oxide and the peak area of copper hydroxide determined using the Cu2P _3/2 spectrum and the Cu LMM spectrum is 100, the copper oxide A conductive substrate having a peak area of 40 or more and a peak area of the copper hydroxide of 60 or less. According to claim 1,
The conductive substrate, wherein the metal layer contains copper. According to claim 1 or 2,
A conductive substrate wherein the metal layer and the blackening layer are formed on at least one side of the transparent substrate in order from the transparent substrate side. According to claim 1 or 2,
A conductive substrate wherein the blackening layer, the metal layer, and the blackening layer are formed on at least one side of the transparent substrate in this order from the transparent substrate side. According to claim 1 or 2,
The conductive substrate whose thickness of the said blackening layer is 100 nm or less. According to claim 1 or 2,
A conductive substrate having an average reflectance of light having a wavelength of 400 nm or more and 700 nm or less of 40% or less. According to claim 1 or 2,
The conductive substrate, wherein the metal layer and the blackening layer are mesh-shaped wiring.

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