KR102485866B1 - Apparatus for processing substrate - Google Patents

Abstract

A substrate processing apparatus is disclosed. The substrate processing apparatus of the present invention enables manufacturing of a device corresponding to a large-area large substrate, can be manufactured in various shapes, can expand the application range, and can improve the heat uniformity of the chamber.

Description

Substrate processing device {APPARATUS FOR PROCESSING SUBSTRATE}

The present invention relates to a substrate processing apparatus. More specifically, it relates to a substrate processing apparatus capable of manufacturing a device corresponding to a large-area large-size substrate, capable of being manufactured in various shapes, expanding the range of application, and improving thermal uniformity of a chamber.

Substrate processing devices are used in the manufacture of flat panel displays, semiconductors, solar cells, and the like, and are roughly divided into vapor deposition devices and annealing devices. Among them, an annealing device is a device that deposits a film on a substrate and improves properties of the deposited film, and is a heat treatment device that crystallizes or phase-changes the deposited film.

A conventional heat treatment apparatus has a substantially vertical or hexahedral shape and is made of quartz. However, considering the fact that substrates have recently become larger, it is not efficient in terms of difficulty and cost to enlarge a heat treatment apparatus made of quartz. On the other hand, although it is possible to configure a large heat treatment apparatus with a metal material, it is not good in terms of durability, and since a welding process must be performed to connect each component, there is a problem in that manufacturing cost and time increase.

In addition, as the size of the heat treatment apparatus increases and it is manufactured in various shapes, a sealing problem with the external environment is also a matter to be considered.

The present invention has been made to solve the various problems of the prior art as described above, and an object of the present invention is to provide a substrate processing apparatus capable of processing a large-area large substrate.

In addition, an object of the present invention is to provide a substrate processing apparatus capable of facilitating the manufacture of a large reactor and expanding the range of application by manufacturing in various shapes.

Another object of the present invention is to provide a substrate processing apparatus capable of improving thermal efficiency and thermal uniformity of a substrate processing space.

The above object of the present invention is a substrate processing apparatus in which at least one substrate is processed, comprising: a reactor for providing a chamber space in which a substrate is processed; An atmospheric unit located at the bottom of the reactor and providing a space for loading/unloading substrates; a substrate loading unit in which at least one substrate is loaded; It includes a lifting part for moving the substrate loading part in the vertical direction, and the substrate loading part includes: a base; a substrate support formed on the base in a vertical direction; and a heater unit generating heat at a portion spaced apart from the upper surface of the base.

While the substrate loading unit moves up and down, the upper rim of the base is detachably coupled to the lower surface of the manifold disposed below the reactor, and when the base is coupled to the lower surface of the manifold, the substrate may be loaded into the reactor.

The heater unit includes a plurality of heaters, and the heater includes: a first non-heating unit extending from a first position of the base; and a heating unit having one end electrically connected to the first non-heating unit so as to be spaced apart from the base by a first separation distance.

The heater may further include a second non-heating part extending from the second position of the base and connected to the other end of the heating part.

The first non-heating part and the second non-heating part may be formed in a direction perpendicular to the base, and the heating part may be formed in a direction parallel to the substrate or the base.

The heater unit may include at least one first heater formed to have a first length in the front-rear direction of the base; at least one second heater formed to be long with a second length in the left-right direction of the base; at least one third heater formed to be long in a third length in at least a diagonal direction of the base; a fourth heater formed with a fourth length shorter than the first length and the second length in the front-back direction or the left-right direction of the base; And it can be made by selecting any one or more heaters from combinations thereof.

It is possible to arrange layer insulation in multiple layers on a base, and to place wall insulation wrapped around the multiple layer insulation.

A heater hole through which a heater part passes may be formed in the layer insulation part.

A plurality of gas supply units extending in a vertical direction may be disposed along a predetermined interval on a side surface of a chamber in the reactor.

It further includes a housing having an open lower surface in a form enclosing the reactor, and a lower portion of the housing may be connected to an upper portion of the manifold.

The housing may include a housing heater.

A fluid circulation unit supplying/discharging fluid to/from a space between the inner surface of the housing and the outer surface of the reactor may be further included.

The fluid circulation unit may supply fluid through a fluid supply unit formed in an upper region of the housing and discharge the fluid through at least one fluid discharge unit formed at a height lower than the fluid supply unit.

The fluid discharge unit may be formed at a predetermined interval along a vertical direction of the housing.

The reactor may have a shape in which a lower portion is open and a side portion and an upper portion of the reactor are closed including at least one insulating plate.

The reactor may have a polygonal column shape with an open bottom.

The waiting unit may have an open form with an entrance formed on at least one side thereof.

When the upper rim of the base is coupled to the lower portion of the reactor while the substrate loading unit moves up and down, the chamber space of the reactor may be sealed.

According to the present invention configured as described above, there is an effect of processing a large-area large substrate.

In addition, the present invention has the effect of facilitating the manufacture of a large reactor and expanding the scope of application by manufacturing in various shapes.

In addition, the present invention has an effect of improving thermal efficiency and thermal uniformity of a substrate processing space.

1 is a schematic perspective view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a schematic front cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
3 is a schematic front cross-sectional view showing the operation of a substrate processing apparatus according to an embodiment of the present invention.
4 is a schematic diagram showing a reactor of a substrate processing apparatus according to an embodiment of the present invention.
5 is a schematic diagram showing a reactor of a substrate processing apparatus according to another embodiment of the present invention.
6 is a schematic perspective view showing a substrate loading unit according to an embodiment of the present invention.
7 is a schematic plan view illustrating a substrate loading unit according to an embodiment of the present invention.
8 is a schematic side cross-sectional view showing a substrate mounting unit according to an embodiment of the present invention.
9 is a schematic diagram showing a fluid circulation state according to an embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The detailed description of the present invention which follows refers to the accompanying drawings which illustrate, by way of illustration, specific embodiments in which the present invention may be practiced. These embodiments are described in sufficient detail to enable one skilled in the art to practice the present invention. It should be understood that the various embodiments of the present invention are different from each other but are not necessarily mutually exclusive. For example, specific shapes, structures, and characteristics described herein may be implemented in one embodiment in another embodiment without departing from the spirit and scope of the invention. Additionally, it should be understood that the location or arrangement of individual components within each disclosed embodiment may be changed without departing from the spirit and scope of the invention. Accordingly, the detailed description set forth below is not to be taken in a limiting sense, and the scope of the present invention, if properly described, is limited only by the appended claims, along with all equivalents as claimed by those claims. Similar reference numerals in the drawings indicate the same or similar functions in various aspects, and the length, area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily practice the present invention.

In the present specification, a substrate may be understood as including a substrate used for a display device such as an LED or LCD, a semiconductor substrate, or a solar cell substrate. Also, in the present specification, a substrate treatment process may be understood as including a deposition process, a heat treatment process, and the like. However, hereinafter, it is assumed and described as a heat treatment process.

Substrate processing device

1 is a schematic perspective view showing a substrate processing apparatus 10 according to an embodiment of the present invention. 2 is a schematic front cross-sectional view showing a substrate processing apparatus 10 according to an embodiment of the present invention. 3 is a schematic front cross-sectional view showing the operation of the substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIGS. 1 and 2 , the substrate processing apparatus 10 is a heat treatment device and may include a reactor 100, a waiting unit 200, a substrate loading unit 300, and an elevation unit 400. In addition, a housing 500 surrounding the reactor 100 may be further included.

The reactor 100 may provide a chamber space PR in which at least one substrate is substantially heat treated. The bottom of the reactor 100 is open (130), and the substrates (50) loaded on the substrate loading unit (300) rise through the open bottom (130) to be positioned within the chamber space (PR). Examples of the reactor 100 are shown in FIGS. 4 and 5 to be described later. However, it should be noted that the reactor 100 is not limited to this type.

The standby unit 200 may be located at the bottom of the reactor 100. The waiting unit 200 may provide a waiting space SR before the substrate 50 is processed or after the substrate 50 is processed. That is, the waiting unit 200 may provide a space SR in which the substrate 50 is loaded/unloaded to/from the substrate loading unit 300 . An entrance 210 may be formed on one surface of the waiting unit 200 as a passage through which the substrate 50 is loaded/unloaded into the waiting unit 200 .

The remaining sides of the waiting unit 200 except for the entrance 210 may be composed of a plate and a frame. However, it is not limited thereto, and some of the sides may have a more open form. The waiting unit 200 may support the reactor 100 , the substrate loading unit 300 and the elevating unit 400 . The reactor 100 is supported in a form disposed above the atmospheric part 200, the lifting part 400 is supported in a form disposed inside the reactor 100, and the substrate loading part 300 is a lifting part ( 400) and may be indirectly supported by the reactor 100.

The inside of the waiting unit 200 may be open rather than closed. Since the chamber space PR of the reactor 100 can be sealed by lifting the base 310 of the substrate mounting unit 300, which will be described later, the need to seal the standby unit 200 can be eliminated. Accordingly, since a separate opening and closing door does not need to be installed in the entrance 210, it is possible to simplify the device and reduce costs. In addition, since the atmospheric part 200 is opened, there is an advantage in that a cooling rate can be improved during cooling of the reactor 100 . In addition, since the substrates 50 can be directly loaded into the substrate loading unit 300 and unloaded from the substrate loading unit 300 through the entrance 210 , process time can be reduced.

The manifold 250 may mediate the connection between the two components between the reactor 100 and the atmosphere unit 200 . The manifold 250 may perform sealing between the reactor 100 and the atmospheric unit 200 and at the same time provide an inlet or outlet through which substrate processing gas or the like is introduced or discharged into the reactor 100 .

Substrate processing gas may be introduced into the reactor 100 from an external substrate processing gas supply unit (not shown) through an inlet of the manifold 250 . A plurality of gas supply units 260 extending in a vertical direction may be connected to an inner surface of the manifold 250 . Accordingly, a plurality of gas supply units 260 may be arranged at predetermined intervals on the side of the chamber PR in the reactor 100 . For example, considering that the reactor 100 is a hexahedron, the plurality of gas supply units 260 may be disposed on the side of the chamber PR 4 of the reactor 100 at predetermined intervals.

A plurality of discharge holes (not shown) may be formed in each gas supply unit 260 . When the substrate loading unit 300 loaded with a plurality of substrates 50 is accommodated in the reactor 100, the discharge hole is formed between mutually adjacent substrates 50 supported by the substrate loading unit 300 and the substrate 50. It is preferable to be formed so as to be located at intervals of each. Thus, the flow of the substrate processing gas between the substrates 50 and the substrate 50 can be smoothed, and temperature uniformity can be improved.

By supplying the substrate processing gas, air pressure in the chamber space of the reactor 100 in a closed state may be set higher than that of an external space of the reactor 100 . Since the chamber space of the reactor 100 becomes a positive pressure, contaminants, particles, etc. from outside the reactor 100 may be prevented from entering into the chamber space.

The substrate processing gas introduced into the reactor 100 may be discharged through a discharge passage (not shown) formed in the manifold 250, and an external substrate processing gas discharge means (not shown) such as a pump is installed in the discharge passage. It can be connected to apply exhaust pressure.

Meanwhile, a gas supply unit and a gas discharge unit (not shown) may be formed to communicate with the reactor 100 .

At least one substrate 50 may be loaded on the substrate loading unit 300 . The substrate loading unit 300 may move up and down by the elevator unit 400 while being disposed in the inner space SR of the waiting unit 200 . The substrate loading unit 300 may include a base 310 , a substrate support unit 330 , a heater unit 350 , and an insulation unit 370 . Components of the substrate mounting unit 300 will be described later in detail below in FIG. 6 .

The lifting unit 400 may move the substrate mounting unit 300 in a vertical direction. As the lifting unit 400, known lifting means may be used without limitation, and in particular, a screw jack type lifting means may be used to stably lift the large-area, large-capacity substrate loading unit 300. there is. An elevating unit may be connected to the base 310 of the substrate loading unit 300 to apply a force moving in a vertical direction.

As shown in FIG. 3, when the substrate loading unit 300 (or base 310) is moved to the top by the lifting unit 400, the substrates 50 loaded on the substrate loading unit 300 are moved to the reactor. It may be located in the chamber space PR of (100). As the substrate loading unit 300 rises, the upper rim of the base 310 can be detachably coupled to the lower surface of the manifold 250 disposed below the reactor 100, and the base 310 is attached to the manifold. When coupled to the lower surface of the fold 250, the substrate 50 may be loaded into the reactor 100. A sealing means (S) such as an O-ring is interposed between the manifold 250 and the base 310 to make close contact, thereby sealing the chamber space PR of the reactor 100. there is.

In addition, when the substrate treatment process is completed, the substrate loading unit 300 can be moved to the lowest level by the lifting unit 400 and positioned within the waiting space of the waiting unit 200 . Loading/unloading of the substrate 50 may be performed in the waiting unit 200 .

The housing 500 has a large volume to enclose the reactor 100, and may be formed such that a lower surface is opened while an empty space is formed therein. The housing 500 may form an airtight space as it is connected to the upper portion of the manifold 250 . The outermost surface of the housing 500 may be finished with SUS, aluminum, etc. to serve as an insulator for creating a thermal environment of the reactor 100, and a bent portion (one) on the inside or inside of the housing 500 For example, a housing heater (not shown) formed by continuously connecting “∪” or “∩” shapes) may be installed. The space GR between the housing 500 and the reactor 100 may be used as a passage through which a fluid, which will be described later in FIG. 9 , circulates.

reactor

4 is a schematic diagram showing a reactor 100: 100-1 of the substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIG. 4 , the reactor 100: 100-1 may have an open bottom, and a side portion 110 and an upper portion 150 of the reactor may have a closed shape. The reactor side 110 may have a polygonal column shape, but in this specification, a quadrangular column shape is assumed and described. In addition, the reactor upper part 150 may be a planar shape, a dome shape, or a shape including a predetermined curvature in the vertical direction (a shape in which a portion of the flat plate is bent), etc., but in this specification, a planar shape is assumed and described. It should be noted that the shapes of the reactor side 110 and the top 150 are not necessarily limited to the exemplary shapes in the drawings.

The reactor side 110 and the reactor top 150 may include a plurality of frames 120 , 130 , 160 , and 170 . Also, the reactor side part 110 and the reactor upper part 150 may include at least one insulating plate 101 . Thus, a plurality of frames (120, 130, 160, 170) and the combination of the insulating plate 101 can configure the surface of the side of the reactor 110, the surface of the upper portion of the reactor (150).

The insulating plate 101 serves to insulate the inside of the reactor 100 from the external environment, and each insulating plate 101 preferably has a flat plate shape, but may have a dome shape or a three-dimensional shape having a predetermined curvature. The insulating board 101 may include quartz, ceramic, glass, or the like, which is a material having excellent heat resistance and rigidity at high temperatures.

Reactor side 110 may include a plurality of vertical frames (120: 121, 122, 123, ...) and a plurality of horizontal frames (130: 131, 132, ...).

The vertical frame 120 may extend vertically to correspond to the height of the reactor 100 . The vertical frame 120 may include only the vertical frames 121 and 122 disposed at the corners of the reactor side 110, or may further include a vertical frame 123 disposed on the side of the reactor side 110. there is. 4 and 5, since the reactor side 110 is in the shape of a square pillar, four vertical frames 121 and 122 are included at the corners, and a total of four vertical frames 123, one on each side, are further provided. include The number of vertical frames 120 may be changed according to the shape of the side of the reactor 110, the size of the side of the side of the reactor 110, and the like.

The horizontal frame 130 may extend in a horizontal direction to connect a pair of adjacent vertical frames 120 . 4 and 5, the horizontal frame 131 is disposed between a pair of adjacent vertical frames 121 and 123, and the horizontal frame 132 is disposed between a pair of adjacent vertical frames 122 and 123. can be placed. Both ends of the horizontal frame 130 may be connected to a pair of adjacent vertical frames 120 by fastening or bonding.

The vertical frame 120 and the horizontal frame 130 are connected, and the insulation board 101 may be disposed in the remaining empty space. In other words, the insulating board 101 may be disposed in the area [empty area] partitioned by the vertical frame 120 and the horizontal frame 130 to form a closed surface. From another point of view, the left and right sides of one insulating plate 101 may be in contact with two vertical frames 120, and the upper and lower sides may be in contact with two horizontal frames 130. In FIG. 4, each side constituting the side part 110 of the reactor includes three vertical frames 120 and ten horizontal frames 130, which divide eight spaces, and eight insulation plates 101 are disposed. form is shown.

On one surface constituting the reactor side 110, a plurality of vertical frames 120 (121, 122, 123) are preferably arranged at regular intervals along the horizontal direction. In addition, the plurality of horizontal frames 130 (131, 132) connecting a pair of adjacent vertical frames 120 are preferably arranged at regular intervals along the vertical direction. Thus, since the reactor side portion 110 can be configured with the same type of insulation plates 101, there is an advantage in that the assembly of the reactor 100 is simplified.

The reactor upper part 150 may include one insulating plate 101 or may include a plurality of insulating plates 101 . The frame constituting the rim of the reactor upper part 150 may correspond to the horizontal frames 130 located at the top of the side part 110 of the reactor. The size and shape of the insulating plate 101 disposed on the side of the reactor 110 and the upper part of the reactor 150 may be the same, but may be formed differently.

When the upper portion of the reactor 150 includes only one insulating plate 101 , horizontal frames 130 positioned at the top of the side portion 110 of the reactor may support an edge of the insulating plate 101 .

When the upper part of the reactor 150 includes a plurality of insulating plates 101, the upper part of the reactor 150 includes at least one upper frame 160 or 170 so as to partition an area in which the plurality of insulating plates 101 are disposed. can include

Both ends of the upper frames 160 and 170 may be connected to the horizontal frame 130 and/or the vertical frame 120 disposed at the top of the side portion 110 of the reactor. Both ends of the upper frame 160 may be connected to the top of the vertical frame 120 . In addition, the upper frame 170, both ends may be connected to the upper side of the horizontal frame 130 disposed at the top of the side portion 110 of the reactor.

The upper frames 160 and 170 include at least one first upper frame 160 disposed in a first direction and at least one second upper frame 170 (171, 172) disposed in a second direction perpendicular to the first direction. ) may be included. The first upper frame 160 may be connected to an upper end of the vertical frame 120 and the second upper frame 170 may be connected to an upper end of the horizontal frame 130 .

More specifically, in the example of FIGS. 4 and 5, both ends of the first upper frame 160 are connected to the top of the vertical frame 123, and one end of the second upper frame 170 (171, 172) It is connected to the first upper frame 160, and the other end may be connected to the horizontal frame 130. Lower ends of both ends of the upper frames 160 and 170 may be connected to upper sides of the vertical frame 120 and the horizontal frame 130 . In other words, the upper frames 160 and 170 may span the vertical frame 120 and the horizontal frame 130, or may be firmly coupled. In FIG. 4, the surface constituting the upper part of the reactor 150 includes one first upper frame 160 and four second upper frames 170, which divide six spaces, and six insulating plates 101 ) is shown.

An insertion groove (not shown) may be formed in at least one of the vertical frame 120 and the horizontal frame 130 . An edge of the insulating plate 101 may be inserted into the insertion groove. After repeating the process of inserting the insulation plate 101 into the insertion groove to manufacture the reactor side portion 110, the upper frames 160 and 170 are connected to the vertical frame 120 and the horizontal frame 130 at the top of the reactor side portion 110 can be connected to the In addition, the manufacture of the upper part 150 of the reactor may be completed by disposing the insulating plate 101 in the region partitioned by the upper frames 160 and 170 .

Accommodating grooves (not shown) may be formed in the upper frames 160 and 170 so that the insulating plate 101 is not displaced when the insulating plate 101 is disposed in the region partitioned by the upper frames 160 and 170. . The accommodating groove is formed stepwise so that a part or all of the rim of the insulating board 101 can be accommodated. Since the upper side of the reactor 150 can be configured by inserting the insulating plate 101 into the receiving groove in the upper portion of the reactor 150, there is a convenient advantage. In addition, since the insulating plate 101 is accommodated in the receiving groove in the upper portion of the reactor 150, an access road from the upper portion of the reactor 150 to the inner space of the chamber is secured by lifting the insulating plate 101, and the substrate processing apparatus 10 Alternatively, there is an advantage in that maintenance of the reactor 100 becomes simple.

Meanwhile, in the upper frames 160 and 170, insertion grooves are formed like the vertical frame 120 and the horizontal frame 130, and the rim of the insulating plate 101 is inserted into the insertion groove to configure the reactor upper portion 150. You may.

In addition, an elastic means (not shown) may be further disposed in the insertion groove. As the elastic means, a known elastic means such as a spring can be used without limitation. The elastic means may be fixed by pushing the insulating plate 101 to one side of the insertion groove. Since the elastic means pushes and fixes the insulation board 101 to one side of the insertion groove, it can contribute to completely sealing the gap between the insulation board 101 and the insertion groove. In addition, since the elastic means provides a predetermined elastic force, there is an advantage in preventing stress from being concentrated on the insulating plate 101 even when the reactor 100 is slightly shaken. And, even when the reactor 100 is disassembled, there is an advantage in that it is very easy to take out the insulation board 101 from the frames just by removing the elastic means.

5 is a schematic diagram showing a reactor 100: 100-2 of the substrate processing apparatus 10 according to another embodiment of the present invention. Only differences from FIG. 4 will be described.

Referring to FIG. 5 , the reactor 100: 100-2 may have a bottom open shape, and a side portion 110 of the reactor and an upper portion 150 of the reactor may have a closed shape. After the vertical frame 120 and the horizontal frame 130 are connected, the side of the side of the reactor 110 can be configured as the insulating plate 101 is disposed in the remaining empty space of the side of the reactor 110 . In FIG. 5, each side constituting the side part 110 of the reactor includes three vertical frames 120 and eight horizontal frames 130, which divide six spaces, and six spaces in each partitioned space. A form in which the insulating plate 101 is closely disposed is shown.

The reactor (100: 100-2) according to the second embodiment is characterized in that the insulation plate 101 adheres to the outside of the vertical frame 120 and the horizontal frame 130. The insulation board 101 may be in close contact with the outside of the vertical frame 120 and the horizontal frame 130 without being sandwiched between the areas (empty areas) partitioned by the vertical frame 120 and the horizontal frame 130 .

In the reactor (100: 100-2) of the second embodiment, after connecting the vertical frame 120 and the horizontal frame 130 by a known method, or while performing the connection, the insulation plate 101 is moved from the outside to the vertical frame ( 120) and the horizontal frame 130 may be installed in close contact. Therefore, the reactor 100 can be configured in a simple process, and even in the process of maintaining the reactor 100, there is no need to disassemble the frames 120, 130, 160, and 170, only each insulation plate 101 from the outside. It has a convenient advantage because it can be removed or replaced.

A bracket 140 may be connected to the outside of the horizontal frame 130 . One or a plurality of brackets 140 may be connected to the outside of the horizontal frame 130 by fastening, bonding, or the like.

The bracket 140 may provide a seating groove (not shown). Bracket 140 is formed to be curved in the form of approximately '└', '├', etc., the side cross-section shape, the empty space can act as a seating groove. A portion of the rim of the insulating plate 101 may be seated in the space of the seating groove.

A bracket 145 may be further connected to the outside of the vertical frame 120 . One or a plurality of brackets 145 may be connected to the outside of the vertical frame 120 by fastening, bonding, or the like.

Like the bracket 140, the bracket 145 may provide a seating groove (not shown). The bracket 145 is formed so that the side cross-section is curved in an approximate '└' shape, and the empty space may act as a seating groove.

In the state in which the frames 120 and 130 are configured, by connecting the brackets 140 and 145 and seating and supporting the insulation board 101 in the seating groove of the brackets 140 and 145, the edge of the insulation board 101 is placed in the frame ( 120, 130). Alternatively, in a state in which the frames 120 and 130 are configured, after connecting the brackets 140 and 145 to the outside of the frames 120 and 130, the insulation plate 101 is seated and supported in the seating groove of the brackets 140 and 145. By doing so, the corners of the insulation board 101 may be brought into close contact with the frames 120 and 130 . Accordingly, there is an advantage in that the manufacturing process is simplified. In addition, since the insulation board 101 can be taken out even if only some of the brackets 140 and 145 are separated, there is an advantage in that the maintenance process of the reactor 100 is simplified.

In addition, an elastic means (not shown) may be further disposed in the seating groove (not shown). The elastic means may push and fix the insulating plate 101 toward one side of the seating groove, that is, toward the outer surfaces of the vertical frame 120 and the horizontal frame 130 .

As described above, since the reactors 100: 100-1 and 100-2 of the present invention can form the reactor 100 by combining a plurality of vertical frames 120 and horizontal frames 130, they can be manufactured in various forms. It can be, and there is no limit in terms of size. Thus, there is an advantage in that the reactor 100 capable of processing a large-area large substrate can be easily manufactured. Therefore, the selection of materials that can be used for the reactor 100 is diversified, and there is an effect of improving manufacturing efficiency.

Board loading part and heater part

6 is a schematic perspective view showing a substrate loading unit 300 according to an embodiment of the present invention. 7 is a schematic plan view showing a substrate mounting unit 300 according to an embodiment of the present invention. 8 is a schematic side cross-sectional view showing a substrate mounting unit 300 according to an embodiment of the present invention.

At least one substrate 50 may be loaded on the substrate loading unit 300 . The substrate loading unit 300 may include a base 310 , a substrate support unit 330 , a heater unit 350 , and an insulation unit 370 .

The base 310 may have a plate shape on which components of the substrate loading unit 300 are supported. It is preferable that the area of the base 310 is larger than the area of the open lower part 130 of the reactor 100 so that the substrate loading part 300 can be raised and coupled to the manifold 250 . A sealing means (S) may be installed at an edge portion where the base 310 contacts the manifold 250 . As the base 310 is connected to the lifting part 400 and moves in the vertical direction, the entire substrate loading part 300 can move in the vertical direction.

The substrate support 330 may be formed in a vertical direction on the base 310 . A plurality of substrate supporters 330 may be installed along the periphery of the base 310 while having a mutual interval therebetween. A support groove (not shown) may be formed in the substrate support part 330 so that the substrate 50 is inserted and supported, or a support rod (not shown) may be protruded to support a lower portion of the substrate 50 . Alternatively, the substrate 50 is supported and seated on a substrate support means (not shown) such as a substrate holder, boat, or ladder, and the substrate support part 330 supports the substrate support means (not shown). may have a shape. The number and shape of the substrate supporters 330 may be adjusted in consideration of the size and shape of the substrate 50 .

The heater unit 350 may compensate for heat loss to the lower portion of the reactor 100 . The heater unit 350 operates when the substrate loading unit 300 is moved to the top and the substrates 50 are aligned inside the reactor 100 and the inside of the reactor 100 is sealed, that is, the substrate processing process in the reactor 100 When this is performed, heat loss to the bottom of the reactor 100 can be compensated for. Since the housing 500 surrounds the part except for the lower part of the reactor 100, heat is not easily lost, whereas the lower part of the reactor 100 has a high possibility of heat escaping, so that it moves up and down within the reactor 100. Thermal deviation may occur. Therefore, heat is generated in the substrate loading unit 300 that seals the bottom of the reactor 100 to reduce thermal deviation.

The heater unit according to the prior art is inserted into the base in the form of a meandering hot wire, and when the base contact heater is heated, heat is transferred not only to the upper substrate direction but also to the surface direction of the base having a large heat capacity. Because of this, the temperature rise rate is lowered and energy is greatly wasted. In addition, since the base heat conduction from the heater is difficult to cool easily, the cooling rate drops, and since the temperature of the base cannot be easily controlled artificially, even if the temperatures of the heaters are individually controlled, it is difficult to predict the temperature of the base, resulting in a decrease in the substrate processing space. There are problems in that the lower temperature cannot be uniformly controlled.

Accordingly, the heater unit 350 of the present invention may be installed to generate heat at a portion spaced apart from the upper surface of the base 310 . Thus, it is possible to improve thermal efficiency by minimizing heat transfer toward the base 310 . The heater unit 350 may include a plurality of heaters 351, 352, 353, 354, ....

Each of the heaters 351, 352, 353, 354, ... may include a non-heating part and a heating part.

For example, the heater 353 has a first non-heating portion extending from the first position of the base 310 and one end electrically electrically connected to the first non-heating portion so as to be spaced apart from the base 310 by a first separation distance D1. It may include a heating unit that is connected.

As another example, the heaters 351, 352, and 354 have first non-heating portions extending from the first position of the base 310, and one end portion of the first non-heating portion to be spaced apart from the base 310 by the first separation distance D1. A heating unit electrically connected to the heating unit), and a second non-heating unit extending from the second position of the base 310 and connected to the other end of the heating unit.

Here, the first separation distance D1 should be sufficiently secured to prevent the thermal energy generated from the heating unit from being transferred to the base 310 through heat transfer. That is, when the first separation distance D1 is too short, thermal energy generated from the heating unit may be too easily transferred to the base 310 by thermal radiation or heat convection. Conversely, when the first separation distance D1 is too long, the space capable of accommodating the substrate 50 is reduced and productivity may decrease. In consideration of this, the first separation distance D1 is preferably 1 mm or more to 10 cm or less, but the first separation distance D1 is not necessarily limited thereto, and considers the standard of the substrate 50 or the substrate processing environment. Thus, all separation distances of numerical values capable of minimizing heat radiation, heat flow, or heat conduction from the heating unit to the base 310 may be applied.

For example, the non-heating part may be formed in a rod shape long in a vertical direction with respect to the base 310, and the heating part may be formed in a long rod shape in a direction parallel to the substrate 50 or the base 310. Accordingly, the heaters 351, 352, 353, 354, ... may be formed in a shape such as "a", "┌┐", or "T" as a whole. However, it is not necessarily limited to this, and within the range in which the non-heating part is formed in the vertical direction as a whole, and in the range in which the heating part is formed in the horizontal direction as a whole, in the form of an arc, curve, coil, or a three-dimensional and geometric combination thereof. All shapes and the like can be applied.

Also, for example, the non-heating part may be made of the same material, and the heating part may be made of a different metal material. More specifically, for example, the non-heating part has relatively low heat generation and electrical resistance, and may be a conductive material such as nickel (Ni), tungsten (W), molybdenum (Mo), etc. , The heat generating parts 351b and 353b may be made of a heat-conductive material such as kanthal, super-kanthal, nichrome, etc., which has relatively high heat generation and high electrical resistance and durability against high temperatures. .

Therefore, since the heat generating part is installed to be spaced apart from the base 310 to minimize heat transfer in the direction of the base 310 and induce complete heat transfer only in the direction of the substrate 50, the thermal efficiency of the equipment is improved, and each The heaters (351, 352, 353, 354, ...) are arranged in a multi-zone form to have various positions and sizes/thicknesses, and local individual control is possible, so that the heaters are uniform over the entire area of the substrate 50. You can add one column. In addition, by minimizing the thermal capacity of the heater unit 350 to be heated to improve the temperature increase rate and cooling rate, the process time can be shortened, thereby increasing the yield.

On the other hand, as shown in FIG. 7 , the heater unit 350 includes at least one first heater 351 formed to be long in the first length L1 in the front-back direction of the base 310 as a whole, the base as a whole ( 310), at least one second heater 352 formed long in the left and right direction with a second length L2, and at least one third formed long with a third length L3 in the diagonal direction of the base 310 as a whole. It can be made by selecting any one or more of the heater 353, the fourth heater 354 formed short to the fourth length L4 in the front-back direction or left-right direction of the base 310, and combinations thereof. More specifically, the first heater 351 may be disposed adjacent to the first side of the heat insulating part 370 and the second side opposite to the first side along the front-back direction of the base 310 . The second heater 352 may be disposed adjacent to the third side of the heat insulating part 370 and the fourth side opposite to the third side along the left-right direction of the base 310 . The third heater 353 may be disposed along the diagonal direction of the base 310 adjacent to the four corners of the heat insulator 370 . The fourth heater 354 may be disposed along the front-back direction or the left-right direction of the base 310 on an area inside the area where the first heater 351 and the second heater 352 are disposed.

Therefore, the heater unit 350 controls the temperature of each of the heaters 351, 352, 353, 354, ..., the longitudinal direction, the width direction, the edge portion and the center portion, the diagonal direction, etc. of the substrate 50. can improve the thermal uniformity of

Referring back to FIGS. 6 and 8 , the insulation 370 may include a wall insulation 371 and a layer insulation 375 . The heat insulating unit 370 may employ a known heat insulating plate material.

First, the plurality of layer insulation parts 375 on the base 310 may be arranged in a horizontal direction so as to be spaced apart from each other. In order to avoid interference with the heater unit 350, the layer insulation unit 375 may have heater holes 379 through which the heater unit 350, particularly the non-heating unit, may pass. And, it can be arranged so that the periphery of the multiple-layer insulation part 375 is surrounded by the wall insulation part 371.

Since the layer insulation parts 375 are arranged in a plurality of layers, a heat insulation layer may be formed for each space between the layer insulation parts 375 . In addition, since the wall insulation portion 371 surrounds the layer insulation portion 375, air flow between the layer insulation portions 375 may be prevented from escaping. Accordingly, it is possible to further prevent heat from escaping from the chamber region PR to the lower part of the reactor 100, and heat generated from the heater unit 350 is better preserved, thereby minimizing the heat capacity and uniforming the temperature. sexuality can be improved.

fluid circulation system

9 is a schematic diagram showing a fluid circulation state according to an embodiment of the present invention.

Referring to FIG. 9 , the substrate processing apparatus 10 is a fluid circulation unit capable of supplying and discharging fluid to the fluid circulation space GR between the inner surface of the housing 500 and the outer surface of the reactor 100 ( 550 and 570) may be further included. The fluid circulation units 550 and 570 may include a cooling unit/heating unit 550 capable of cooling/heating the fluid and a blower 570 forming a moving air stream of the fluid.

There is a problem in that the cooling time is delayed because the heat inside the reactor 100 or inside the housing 500 is concentrated upward during the substrate treatment process, particularly during the cooling process. Accordingly, there is a need for a fluid circulation system capable of first cooling the heat load of the upper part of the reactor 100/housing 500 rather than the lower part.

The fluid circulation units 550 and 570 may supply fluid to the fluid circulation space GR through the fluid supply unit 510 formed in the upper region of the housing 500 . The fluid supply unit 510 may refer to a tube, hole, slit, or the like formed in the housing 500 so that the inner space GR of the housing 500 and the fluid circulation units 550 and 570 communicate with each other. The fluid supply unit 510 is preferably formed at least in an upper region of the housing 500 at a height equal to or higher than that of the substrate 50 disposed at the top inside the reactor 100 .

Also, the fluid circulation units 550 and 570 may discharge the fluid in the fluid circulation space GR through at least one fluid discharge unit 530 formed at a height lower than that of the fluid supply unit 510 . Like the fluid supply unit, the fluid discharge unit 530 may refer to a pipe, hole, slit, or the like formed in the housing 500 so that the inner space GR of the housing 500 and the fluid circulation units 550 and 570 communicate with each other. . A plurality of fluid discharge units 530 may be formed at predetermined intervals along the vertical direction of the housing. The fluid discharged through each fluid discharge unit 530 may enter and circulate in the fluid circulation units 550 and 570 through respective paths, or may be combined into one path 530 and the fluid circulation units 550 and 570 ) can be entered and cycled.

As described above, the substrate processing apparatus 10 of the present invention has an advantage in that it can relieve the heat load of the upper part and improve the cooling efficiency as it has a system in which fluid circulates from the upper region to the lower region of the reactor 100. .

Although the present invention has been shown and described with preferred embodiments as described above, it is not limited to the above embodiments, and various variations can be made by those skilled in the art within the scope of not departing from the spirit of the present invention. Transformation and change are possible. Such modifications and variations are intended to fall within the scope of this invention and the appended claims.

10: substrate processing device
50: substrate
100, 100-1, 100-2: reactor
101: insulation plate
110: reactor side
120: vertical frame
130: horizontal frame
140, 145: bracket
150: reactor top
160, 170: upper frame
200: standby unit
210: entrance
250: manifold
260: gas supply unit
300: substrate loading unit
310: base
330: substrate support
350: heater unit
370: insulation
400: lifting part
500: housing
510: fluid supply unit
530: fluid outlet
550, 570: fluid circulation unit

Claims (18)

A substrate processing apparatus in which at least one substrate is processed,
A polygonal pillar-shaped reactor providing a chamber space in which a substrate is processed and having an open bottom;
An atmospheric unit located at the bottom of the reactor and providing a space for loading/unloading substrates;
a substrate loading unit in which at least one substrate is loaded;
Elevating part that moves the board loading part up and down
including,
The board loading part,
Base;
a substrate support formed on the base in a vertical direction; and
Heater part that generates heat at the part separated from the upper surface of the base
Including,
Layer insulation is arranged on the base to form a mutual spacing in a plurality of layers,
A wall insulation is disposed surrounding the plurality of layer insulation;
The heater unit includes a plurality of heaters,
heater,
a first non-heating part extending from the first position of the base; and
a heating unit having one end electrically connected to the first non-heating unit so as to be spaced apart from the base by a first separation distance; and
A second non-heating part extending from the second position of the base and connected to the other end of the heating part
Including, the substrate processing apparatus. According to claim 1,
As the substrate loading unit moves up and down, the upper rim of the base is detachably coupled to the lower surface of the manifold disposed below the reactor,
When the base is coupled to the lower surface of the manifold, the substrate is loaded into the reactor, the substrate processing apparatus. delete delete According to claim 1,
A substrate processing apparatus, wherein the first non-heating part and the second non-heating part are formed in a vertical direction with respect to the base, and the heating part is formed in a direction parallel to the substrate or the base. According to claim 1,
heater part,
at least one first heater formed to be long with a first length in the front-rear direction of at least the base;
at least one second heater formed to be long with a second length in the left-right direction of the base;
at least one third heater formed to be long in a third length in at least a diagonal direction of the base;
a fourth heater formed with a fourth length shorter than the first length and the second length in the front-back direction or the left-right direction of the base; and
A substrate processing apparatus formed by selecting any one or more heaters from combinations thereof. According to claim 6,
The layer insulation part is rectangular plate shape, a first heater is disposed along the front-back direction of the base adjacent to a first side of the heat insulation part and a second side opposite to the first side, and the second heater is disposed along the third side and the second side of the heat insulation part. It is disposed along the left-right direction of the base adjacent to the fourth side opposite to the third side, the third heater is disposed along the diagonal direction of the base adjacent to the four corners of the heat insulating portion, and the fourth heater is the first heater and the fourth heater. 2 A substrate processing apparatus disposed along the front-back direction or the left-right direction of a base on an area inner than the area where the heaters are disposed. According to claim 1,
A substrate processing apparatus in which a heater hole through which a heater part passes is formed in the layer insulation part. According to claim 1,
A substrate processing apparatus in which a plurality of gas supply units extending in a vertical direction are disposed along a predetermined interval on a side surface of a chamber in a reactor. According to claim 2,
Further comprising a housing with an open bottom in a form surrounding the reactor,
A lower portion of the housing is connected to an upper portion of the manifold. According to claim 10,
The housing includes a housing heater, a substrate processing apparatus. According to claim 10,
A substrate processing apparatus further comprising a fluid circulation unit supplying/discharging fluid to a space between an inner surface of the housing and an outer surface of the reactor. According to claim 12,
The fluid circulation unit supplies fluid through a fluid supply unit formed in an upper region of the housing,
A substrate processing apparatus for discharging fluid through at least one fluid discharge unit formed at a height lower than the fluid supply unit. According to claim 13,
The fluid discharge unit is formed with a predetermined interval along the vertical direction of the housing, the substrate processing apparatus. According to claim 1,
The bottom of the reactor is open,
A substrate processing apparatus having a closed shape including a side portion and an upper portion of the reactor including at least one insulating plate. According to claim 1,
the side of the reactor,
a plurality of vertical frames;
a plurality of horizontal frames connecting a pair of adjacent vertical frames; and
A plurality of insulating plates arranged in the area partitioned by the vertical frame and the horizontal frame
Including, the substrate processing apparatus. According to claim 1,
At least one side of the waiting unit has an entrance and exit, and is open to the substrate processing apparatus. According to claim 1,
A substrate processing apparatus in which the chamber space of the reactor is sealed when the upper edge of the base is coupled to the lower portion of the reactor while the substrate loading unit moves up and down.

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