KR102466269B1 - 반도체 웨이퍼의 세정방법 - Google Patents
반도체 웨이퍼의 세정방법 Download PDFInfo
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- KR102466269B1 KR102466269B1 KR1020197027585A KR20197027585A KR102466269B1 KR 102466269 B1 KR102466269 B1 KR 102466269B1 KR 1020197027585 A KR1020197027585 A KR 1020197027585A KR 20197027585 A KR20197027585 A KR 20197027585A KR 102466269 B1 KR102466269 B1 KR 102466269B1
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- Prior art keywords
- semiconductor wafer
- ozone water
- cleaning
- hydrofluoric acid
- speed
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 238000004140 cleaning Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 78
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 76
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 75
- 238000003780 insertion Methods 0.000 claims abstract description 18
- 230000037431 insertion Effects 0.000 claims abstract description 18
- 235000012431 wafers Nutrition 0.000 claims description 103
- 239000007788 liquid Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 abstract description 36
- 238000007654 immersion Methods 0.000 abstract description 9
- 238000005406 washing Methods 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01009—Fluorine [F]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
도 2는 반도체 웨이퍼를 오존수조 내에 삽입하는 공정을 나타내는 개략도이다.
도 3은 실시예 1~6, 비교예 1~4에 있어서의, 오존수조 내에의 실리콘 웨이퍼의 삽입속도와, 파티클 측정결과의 관계를 나타내는 그래프이다.
Claims (5)
- 반도체 웨이퍼를, 불산을 충전한 불산조 내에 삽입하여, 상기 불산에 침지하고, 상기 불산조로부터 인출한 후, 상기 반도체 웨이퍼를, 오존수를 충전한 오존수조 내에 삽입하여, 상기 오존수에 침지하여 세정하는 반도체 웨이퍼의 세정방법으로서,
상기 오존수조 내에의 상기 반도체 웨이퍼의 삽입을, 적어도, 상기 반도체 웨이퍼의 하단이 상기 오존수에 접촉하고 나서, 상기 반도체 웨이퍼의 상단이 상기 오존수의 액면으로부터 50mm 이상의 위치가 될 때까지, 삽입속도를 20000mm/min 이상으로 하여 행하는 것을 특징으로 하는,
반도체 웨이퍼의 세정방법.
- 제1항에 있어서,
상기 불산조로부터의 상기 반도체 웨이퍼의 인출을, 인출속도 1000mm/min 이하로 하여 행하는 것을 특징으로 하는,
반도체 웨이퍼의 세정방법.
- 제1항 또는 제2항에 있어서,
상기 반도체 웨이퍼로서, 실리콘 웨이퍼를 세정하는 것을 특징으로 하는,
반도체 웨이퍼의 세정방법. - 삭제
- 삭제
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017065628A JP6686955B2 (ja) | 2017-03-29 | 2017-03-29 | 半導体ウェーハの洗浄方法 |
JPJP-P-2017-065628 | 2017-03-29 | ||
PCT/JP2018/008197 WO2018180224A1 (ja) | 2017-03-29 | 2018-03-05 | 半導体ウェーハの洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190129876A KR20190129876A (ko) | 2019-11-20 |
KR102466269B1 true KR102466269B1 (ko) | 2022-11-11 |
Family
ID=63675389
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020197027585A KR102466269B1 (ko) | 2017-03-29 | 2018-03-05 | 반도체 웨이퍼의 세정방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US11177125B2 (ko) |
JP (1) | JP6686955B2 (ko) |
KR (1) | KR102466269B1 (ko) |
CN (1) | CN110447088B (ko) |
DE (1) | DE112018001115T5 (ko) |
SG (1) | SG11201908278RA (ko) |
TW (1) | TWI755496B (ko) |
WO (1) | WO2018180224A1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021025092A (ja) * | 2019-08-06 | 2021-02-22 | 株式会社荏原製作所 | 基板処理装置 |
CN119188437A (zh) * | 2024-11-26 | 2024-12-27 | 山东有研艾斯半导体材料有限公司 | 一种解决晶圆抛光边缘颗粒聚集的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2893676B2 (ja) * | 1994-05-19 | 1999-05-24 | 信越半導体株式会社 | シリコンウェーハのhf洗浄方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2839615B2 (ja) * | 1990-01-24 | 1998-12-16 | 株式会社東芝 | 半導体基板の洗浄液及び半導体装置の製造方法 |
JPH0677201A (ja) * | 1992-06-29 | 1994-03-18 | Matsushita Electric Ind Co Ltd | 基板洗浄方法 |
US5415698A (en) * | 1992-06-29 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for cleaning semiconductor wafers |
JP3146841B2 (ja) * | 1994-03-28 | 2001-03-19 | 信越半導体株式会社 | ウエーハのリンス装置 |
JP2914555B2 (ja) * | 1994-08-30 | 1999-07-05 | 信越半導体株式会社 | 半導体シリコンウェーハの洗浄方法 |
JP3202508B2 (ja) * | 1994-11-29 | 2001-08-27 | 株式会社東芝 | 半導体ウェハの洗浄方法 |
JPH09283483A (ja) | 1996-04-08 | 1997-10-31 | Nkk Corp | 洗浄装置および洗浄方法 |
JPH10256211A (ja) * | 1997-03-11 | 1998-09-25 | Sony Corp | 半導体基板の洗浄方法 |
US5837662A (en) | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
TW426874B (en) * | 1998-10-14 | 2001-03-21 | United Microelectronics Corp | Method for cleaning a semiconductor wafer |
US6199564B1 (en) * | 1998-11-03 | 2001-03-13 | Tokyo Electron Limited | Substrate processing method and apparatus |
JP4844912B2 (ja) * | 2001-08-01 | 2011-12-28 | 野村マイクロ・サイエンス株式会社 | フォトレジストの除去方法及び除去装置 |
JP4020810B2 (ja) * | 2002-03-29 | 2007-12-12 | 株式会社神戸製鋼所 | 半導体キャリアの寿命測定装置,その方法 |
US20050208774A1 (en) * | 2004-01-08 | 2005-09-22 | Akira Fukunaga | Wet processing method and processing apparatus of substrate |
JP6347232B2 (ja) * | 2015-06-18 | 2018-06-27 | 信越半導体株式会社 | シリコンウェーハの洗浄方法 |
KR101755826B1 (ko) * | 2015-08-13 | 2017-07-10 | 주식회사 엘지실트론 | 웨이퍼 세정장치 및 웨이퍼 세정방법 |
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2017
- 2017-03-29 JP JP2017065628A patent/JP6686955B2/ja active Active
-
2018
- 2018-03-05 KR KR1020197027585A patent/KR102466269B1/ko active IP Right Grant
- 2018-03-05 CN CN201880019193.1A patent/CN110447088B/zh active Active
- 2018-03-05 SG SG11201908278R patent/SG11201908278RA/en unknown
- 2018-03-05 DE DE112018001115.1T patent/DE112018001115T5/de active Pending
- 2018-03-05 US US16/491,294 patent/US11177125B2/en active Active
- 2018-03-05 WO PCT/JP2018/008197 patent/WO2018180224A1/ja active Application Filing
- 2018-03-09 TW TW107107974A patent/TWI755496B/zh active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2893676B2 (ja) * | 1994-05-19 | 1999-05-24 | 信越半導体株式会社 | シリコンウェーハのhf洗浄方法 |
Also Published As
Publication number | Publication date |
---|---|
US11177125B2 (en) | 2021-11-16 |
CN110447088A (zh) | 2019-11-12 |
TWI755496B (zh) | 2022-02-21 |
JP2018170366A (ja) | 2018-11-01 |
TW201841244A (zh) | 2018-11-16 |
WO2018180224A1 (ja) | 2018-10-04 |
US20200027721A1 (en) | 2020-01-23 |
CN110447088B (zh) | 2023-03-28 |
DE112018001115T5 (de) | 2019-11-21 |
JP6686955B2 (ja) | 2020-04-22 |
KR20190129876A (ko) | 2019-11-20 |
SG11201908278RA (en) | 2019-10-30 |
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