KR102456557B1 - Organic light emitting display device and method of manufacturing the same - Google Patents

Abstract

In an organic light emitting display device according to an embodiment of the present invention, an anode electrode, an organic light emitting layer, a cathode electrode, and an auxiliary electrode are provided on the same layer as the anode electrode while being connected to the cathode electrode in an active region of a substrate, and the substrate A signal pad and a passivation layer provided to cover a side surface of the signal pad while having a contact hole to expose the signal pad and the upper surface of the signal pad is provided in the pad area, wherein the signal pad includes a lower signal pad and a central signal pad , and an upper signal pad, wherein the central signal pad is surrounded by the lower signal pad, the upper signal pad, and the passivation layer.

Description

Organic light emitting display device and manufacturing method thereof

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display device, and more particularly, to a top emission type organic light emitting display device and a method of manufacturing the same.

An organic light emitting diode display (OLED) is a self-luminous device, and has low power consumption, high response speed, high luminous efficiency, high luminance, and a wide viewing angle.

An organic light emitting diode display (OLED) is divided into a top emission type and a bottom emission type according to a transmission direction of light emitted through an organic light emitting device. The bottom light emitting method has a disadvantage in that the aperture ratio is lowered due to the circuit element because the circuit element is located between the light emitting layer and the image display surface, whereas in the top light emitting method, the circuit element is not located between the light emitting layer and the image display surface Since it does not, there is an advantage in that the aperture ratio is improved.

1 is a schematic cross-sectional view of a conventional top emission type organic light emitting display device.

As can be seen from FIG. 1 , in the active area AA on the substrate 10 , the active layer 11 , the gate insulating layer 12 , the gate electrode 13 , the interlayer insulating layer 14 , and the source electrode 15 . and a thin film transistor layer T including a drain electrode 16 is formed, and a passivation layer 20 and a planarization layer 30 are sequentially formed on the thin film transistor layer T.

An anode electrode 40 and an auxiliary electrode 50 are formed on the planarization layer 30 . The auxiliary electrode 50 serves to reduce the resistance of a cathode electrode 80 to be described later.

A bank 60 is formed on the anode electrode 40 and the auxiliary electrode 50 to define a pixel region, and an organic light emitting layer 70 is formed in the pixel region defined by the bank 60 , A cathode electrode 80 is formed on the organic light emitting layer 70 .

In the case of the top emission method, the light emitted from the organic light emitting layer 70 passes through the cathode electrode 80 . Therefore, the cathode electrode 80 is formed by using a transparent conductive material, thereby causing a problem in that the resistance of the cathode electrode 80 increases. In order to reduce the resistance of the cathode electrode 80 , the cathode electrode 80 is connected to the auxiliary electrode 50 .

The gate insulating film 12 and the interlayer insulating film 14 are formed in a pad area (PA) on the substrate 10 , and a signal pad 90 is formed on the interlayer insulating film 14 , The passivation layer 20 is formed on the signal pad 90 . A contact hole is provided in the passivation layer 20 , and the signal pad 90 is exposed through the contact hole. A pad electrode 95 is formed on the passivation layer 20 . The pad electrode 95 is connected to the signal pad 90 exposed through the contact hole.

Such a conventional top emission type organic light emitting display device has the following problems.

Since the pad electrode 95 is formed when the anode electrode 40 is formed, it is made of the same material as the anode electrode 40 . At this time, the anode electrode 40 is made of a metal such as silver (Ag) having excellent reflectivity because the light emitted from the organic light emitting layer 70 must be reflected in the direction of the cathode electrode 80 . However, there is a problem that metals such as silver having excellent reflectivity are weak against corrosion. Since the side of the anode 40 is covered by the bank 60 and the upper surface of the anode 40 is covered by the organic light emitting layer 70, the problem of corrosion of the anode 40 is prevented can be However, since the pad electrode 95 has to be connected to an external driver, it is exposed to the outside, and thus the pad electrode 95 is corroded.

In particular, in order to prevent corrosion, the upper surface of the pad electrode 95 may be formed of a material having excellent corrosion resistance, but even in this case, corrosion occurring through the side surface of the pad electrode 95 cannot be prevented.

SUMMARY OF THE INVENTION The present invention has been devised to solve the problems of the related art, and an object of the present invention is to provide a top emission type organic light emitting display device capable of preventing corrosion of a pad electrode, and a method for manufacturing the same.

In order to achieve the above object, an organic light emitting display device according to an embodiment of the present invention includes a substrate including an active region and a pad region, an anode electrode provided in the active region of the substrate, and an organic light emitting layer provided on the anode electrode. , a cathode electrode provided on the organic light emitting layer, an auxiliary electrode connected to the cathode electrode and provided on the same layer as the anode electrode, a first bank covering an edge of the anode electrode, and a second bank covering an edge of the auxiliary electrode Including, the first bank and the second bank may be spaced apart from each other.

Also, in the organic light emitting diode display according to an embodiment of the present invention, a process of forming a source electrode and a signal pad on a substrate, forming a passivation layer on the source electrode and the signal pad, and forming a planarization layer on the passivation layer forming a contact hole exposing the source electrode to the outside by removing predetermined regions of the passivation layer and the planarization layer; a first anode electrode connected to the source electrode; A step of forming a first auxiliary electrode, a step of forming a top electrode covering an upper surface and side surfaces of the first anode electrode and an upper surface and a side surface of the first auxiliary electrode, a photoresist except for a partial region on the upper surface electrode A step of forming a pattern, a step of removing a predetermined region of the passivation layer using the photoresist pattern as a mask to form a contact hole exposing the signal pad to the outside, and manufacturing a top electrode using the photoresist pattern as a mask 2 A process of dividing an anode electrode and a second auxiliary electrode, a process of ashing the photoresist pattern to form a bank using the remaining photoresist pattern, a thermal reflow process to connect the bank with a planarization layer, the above It may be manufactured through a process of forming an organic emission layer on the second anode electrode and a process of forming a cathode electrode connected to the second auxiliary electrode on the organic emission layer.

According to the present invention as described above, there are the following effects.

According to an embodiment of the present invention, the side surface corrosion of the signal pad can be prevented by not forming the pad electrode, but instead forming the signal pad under the passivation layer to prevent the side surface of the signal pad from being exposed.

According to an embodiment of the present invention, a signal pad includes a lower signal pad, a center signal pad, and an upper signal pad, and the central signal pad susceptible to corrosion is formed by the lower signal pad, the upper signal pad, and the By being surrounded by the passivation layer, corrosion of the signal pad can be prevented.

According to an embodiment of the present invention, the required resistance characteristic of the auxiliary electrode can be more easily adjusted by stacking two auxiliary electrodes, the first auxiliary electrode and the second auxiliary electrode, in order to lower the resistance of the cathode electrode.

According to an embodiment of the present invention, since the contact hole exposing the signal pad to the outside, the bank, and the first barrier rib can be formed together through one mask process, there is an advantage in that the number of mask processes can be reduced.

1 is a schematic cross-sectional view of a conventional top emission type organic light emitting display device.
2 is a cross-sectional view of an organic light emitting diode display according to an exemplary embodiment.
3A to 3K are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an exemplary embodiment.

Advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, and only these embodiments allow the disclosure of the present invention to be complete, and common knowledge in the technical field to which the present invention belongs It is provided to fully inform the possessor of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, proportions, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of the present invention are illustrative and the present invention is not limited to the illustrated matters. Like reference numerals refer to like elements throughout. In addition, in describing the present invention, if it is determined that a detailed description of a related known technology may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. When 'including', 'having', 'consisting', etc. mentioned in this specification are used, other parts may be added unless 'only' is used. When a component is expressed in the singular, the case in which the plural is included is included unless specifically stated otherwise.

In interpreting the components, it is interpreted as including an error range even if there is no separate explicit description.

In the case of a description of the positional relationship, for example, when the positional relationship of two parts is described as 'on', 'on', 'on', 'beside', etc., 'right' Alternatively, one or more other parts may be positioned between two parts unless 'directly' is used.

In the case of a description of a temporal relationship, for example, 'immediately' or 'directly' when a temporal relationship is described as 'after', 'following', 'after', 'before', etc. It may include cases that are not continuous unless this is used.

Although the first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the spirit of the present invention.

Each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be

Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

2 is a cross-sectional view of an organic light emitting diode display according to an exemplary embodiment.

As shown in FIG. 2 , the organic light emitting diode display according to an exemplary embodiment includes an active area (AA) and a pad area (PA) provided on a substrate 100 .

In the active area AA on the substrate 100 , a thin film transistor layer T, a passivation layer 165 , a planarization layer 170 , a first anode electrode 180 and a second anode electrode 200 , a first auxiliary An electrode 190 , a second auxiliary electrode 210 , banks 220b and 220c , a barrier rib 230 , an organic emission layer 240 , and a cathode electrode 250 are formed.

The thin film transistor layer T includes an active layer 110 , a gate insulating layer 120 , a gate electrode 130 , an interlayer insulating layer 140 , a source electrode 150 , and a drain electrode 160 .

The active layer 110 is formed on the substrate 100 to overlap the gate electrode 130 . The active layer 110 may be made of a silicon-based semiconductor material or an oxide-based semiconductor material. Although not shown, a light blocking film may be additionally formed between the substrate 100 and the active layer 110 , and in this case, external light incident through the lower surface of the substrate 100 is blocked by the light blocking film. A problem in which the active layer 110 is damaged by external light can be prevented.

The gate insulating layer 120 is formed on the active layer 110 . The gate insulating layer 120 insulates the active layer 110 from the gate electrode 130 . The gate insulating layer 120 may be formed of an inorganic insulating material, for example, a silicon oxide layer (SiOX), a silicon nitride layer (SiNX), or a multilayer thereof, but is not limited thereto. The gate insulating layer 120 may extend to the pad area PA.

The gate electrode 130 is formed on the gate insulating layer 120 . The gate electrode 130 is formed to overlap the active layer 110 with the gate insulating layer 120 interposed therebetween. The gate electrode 130 may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or It may be a single layer or multiple layers made of an alloy thereof, but is not necessarily limited thereto.

The interlayer insulating layer 140 is formed on the gate electrode 130 . The interlayer insulating layer 140 may be formed of the same inorganic insulating material as the gate insulating layer 120, for example, a silicon oxide layer (SiOX), a silicon nitride layer (SiNX), or a multilayer thereof, but is not necessarily limited thereto. not. The interlayer insulating layer 140 may extend to the pad area PA.

The source electrode 150 and the drain electrode 160 are formed to face each other on the interlayer insulating layer 140 . In the gate insulating layer 120 and the interlayer insulating layer 140 , the first contact hole CH1 exposing one end region of the active layer 110 and the second contact hole exposing the other end region of the active layer 110 are formed in the gate insulating layer 120 and the interlayer insulating layer 140 . (CH2) is provided, the source electrode 150 is connected to the other end region of the active layer 110 through the second contact hole CH2, and the drain electrode 160 is connected to the first contact hole It is connected to one end region of the active layer 110 through (CH1).

The source electrode 150 may include a lower source electrode 151 , a center source electrode 152 , and an upper source electrode 153 .

The lower source electrode 151 may be formed between the interlayer insulating layer 140 and the central source electrode 152 to enhance adhesion between the interlayer insulating layer 140 and the central source electrode 152 . have. In addition, the lower source electrode 151 protects the lower surface of the central source electrode 152 , thereby preventing the lower surface of the central source electrode 152 from being corroded. Accordingly, the oxidation degree of the lower source electrode 151 may be smaller than the oxidation degree of the central source electrode 152 . That is, the material forming the lower source electrode 151 may be formed of a material having stronger corrosion resistance than the material forming the center source electrode 152 . As such, the lower source electrode 151 serves as an adhesion promoting layer or a corrosion prevention layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not limited thereto.

The central source electrode 152 is formed between the lower source electrode 151 and the upper source electrode 153 . The central source electrode 152 may be made of copper (Cu), which is a metal having low resistance, but is not limited thereto. The center source electrode 152 may be made of a metal having a relatively low resistance compared to the lower source electrode 151 and the upper source electrode 153 . In order to reduce the total resistance of the source electrode 150 , the thickness of the central source electrode 152 may be greater than the thickness of each of the lower source electrode 151 and the upper source electrode 153 .

The upper source electrode 153 may be formed on the upper surface of the central source electrode 152 to prevent the upper surface of the central source electrode 152 from being corroded. Accordingly, the oxidation degree of the upper source electrode 153 may be smaller than the oxidation degree of the central source electrode 152 . That is, the material forming the upper source electrode 153 may be formed of a material having stronger corrosion resistance than the material forming the center source electrode 152 . The upper source electrode 153 may be formed of a transparent conductive material such as ITO, but is not limited thereto.

The drain electrode 160 may include a lower drain electrode 161 , a center drain electrode 162 , and an upper drain electrode 163 similar to the above-described source electrode 150 .

The lower drain electrode 161 is formed between the interlayer insulating layer 140 and the central drain electrode 162 to promote adhesion between the interlayer insulating layer 140 and the central drain electrode 162, In addition, it is possible to prevent the lower surface of the central drain electrode 162 from being corroded. Accordingly, the oxidation degree of the lower drain electrode 161 may be smaller than the oxidation degree of the central drain electrode 162 . That is, the material forming the lower drain electrode 161 may be formed of a material having stronger corrosion resistance than the material forming the center drain electrode 162 . As such, the lower drain electrode 161 may be made of the same alloy (MoTi) of molybdenum and titanium as the lower source electrode 151 described above, but is not limited thereto.

The central drain electrode 162 is formed between the lower drain electrode 161 and the upper drain electrode 163 and may be made of the same copper (Cu) as the above-described central source electrode 152 , but is limited thereto. it's not going to be The central drain electrode 162 may be made of a metal having a relatively low resistance compared to the lower drain electrode 161 and the upper drain electrode 163 . In order to reduce the overall resistance of the drain electrode 160 , the thickness of the center drain electrode 162 may be thicker than the thickness of each of the lower drain electrode 161 and the upper drain electrode 163 .

The upper drain electrode 163 is formed on the upper surface of the central drain electrode 162 to prevent the upper surface of the central drain electrode 162 from being corroded. Accordingly, the oxidation degree of the upper drain electrode 163 may be smaller than the oxidation degree of the central drain electrode 162 . That is, the material forming the upper drain electrode 163 may be formed of a material having stronger corrosion resistance than the material forming the center drain electrode 162 . The upper drain electrode 163 may be formed of a transparent conductive material such as ITO, but is not limited thereto.

The upper drain electrode 163 may be formed of the same material and the same thickness as the upper source electrode 153 , and the central drain electrode 162 may be formed of the same material and the same thickness as the center source electrode 152 . The lower drain electrode 161 may be formed of the same material and the same thickness as the lower source electrode 151. In this case, the drain electrode 160 and the source electrode 150 are simultaneously formed through the same process. There are advantages to being formed.

The configuration of the thin film transistor layer T as described above is not limited to the illustrated structure, and may be variously modified to a configuration known to those skilled in the art. For example, although the figure shows a top gate structure in which the gate electrode 130 is formed on the active layer 110 , the bottom gate in which the gate electrode 130 is formed under the active layer 110 . It may be formed of a bottom gate structure.

The passivation layer 165 is formed on the thin film transistor layer T, more specifically, on top surfaces of the source electrode 150 and the drain electrode 160 . The passivation layer 165 serves to protect the thin film transistor layer T, and the passivation layer 165 may be made of an inorganic insulating material, for example, a silicon oxide film (SiOX) or a silicon nitride film (SiNX). However, it is not necessarily limited thereto. The passivation layer 165 may extend to the pad area PA.

The planarization layer 170 is formed on the passivation layer 165 . The planarization layer 170 performs a function of flattening the upper portion of the substrate 100 on which the thin film transistor T is provided. The planarization layer 170 may be made of an organic insulating material such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc. However, it is not necessarily limited thereto. The planarization layer 170 may not extend to the pad area PA.

The first anode electrode 180 and the first auxiliary electrode 190 are formed on the planarization layer 170 . That is, the first anode electrode 180 and the first auxiliary electrode 190 are formed on the same layer. A third contact hole CH3 exposing the source electrode 150 is provided in the passivation layer 165 and the planarization layer 170 described above, and the source electrode 150 is passed through the third contact hole CH3. ) and the first anode electrode 180 are connected.

The first anode electrode 180 may include a first lower anode electrode 181 and a first upper anode electrode 182 .

The first lower anode electrode 181 is formed between the planarization layer 170 and the first upper anode electrode 182 to increase the adhesion between the planarization layer 170 and the first upper anode electrode 182 . may play a role in promoting In addition, the first lower anode electrode 181 protects the lower surface of the first upper anode electrode 182 , thereby preventing the lower surface of the first upper anode electrode 182 from being corroded. Accordingly, the oxidation degree of the first lower anode electrode 181 may be smaller than the oxidation degree of the first upper anode electrode 182 . That is, the material forming the first lower anode electrode 181 may be made of a material having stronger corrosion resistance than the material forming the first upper anode electrode 182 . The first lower anode electrode 181 serves as an adhesion promoting layer or a corrosion prevention layer, and may be made of an alloy of molybdenum and titanium (MoTi), but is not limited thereto.

The first upper anode electrode 182 is formed on the upper surface of the first lower anode electrode 181 . The first upper anode electrode 182 may be made of copper (Cu), which is a metal having low resistance, but is not limited thereto. The first upper anode electrode 182 may be made of a metal having a relatively lower resistance than that of the first lower anode electrode 181 . In order to reduce the overall resistance of the first anode electrode 180 , the thickness of the first upper anode electrode 182 may be greater than the thickness of the first lower anode electrode 181 .

The first auxiliary electrode 190 may include a first lower auxiliary electrode 191 and a first upper auxiliary electrode 192 similar to the above-described first anode electrode 180 .

The first lower auxiliary electrode 191 is formed between the planarization layer 170 and the first upper auxiliary electrode 192 to increase the adhesive force between the planarization layer 170 and the first upper auxiliary electrode 192 . It plays a role of promoting and can prevent the lower surface of the first upper auxiliary electrode 192 from being corroded. Accordingly, the oxidation degree of the first lower auxiliary electrode 191 may be smaller than the oxidation degree of the first upper auxiliary electrode 192 . That is, the material forming the first lower auxiliary electrode 191 may be formed of a material having stronger corrosion resistance than the material forming the first upper auxiliary electrode 192 . As such, the first lower auxiliary electrode 191 may be made of the same alloy (MoTi) of molybdenum and titanium as the above-described first lower anode electrode 181 , but is not limited thereto.

The first upper auxiliary electrode 192 is formed on the upper surface of the first lower auxiliary electrode 191 and may be made of the same copper (Cu) as the above-described first upper anode electrode 182, but is not necessarily limited thereto. it is not If the thickness of the first upper auxiliary electrode 192 having a relatively low resistance is thicker than that of the first lower auxiliary electrode 191 having a relatively high resistance, the overall resistance of the first auxiliary electrode 190 can be reduced. desirable.

The first auxiliary upper electrode 192 may be formed of the same material and the same thickness as the first upper anode electrode 182 , and the first lower auxiliary electrode 191 may be formed of the first lower anode electrode 181 . It may be formed of the same material and the same thickness as , and in this case, there is an advantage that the first auxiliary electrode 190 and the first anode electrode 180 can be simultaneously formed through the same process.

The second anode electrode 200 is formed on the upper surface of the first anode electrode 180 . The second anode electrode 200 is formed to contact the entire top and side surfaces of the first anode electrode 180 . That is, a separate insulating layer is not formed between the second anode electrode 200 and the first anode electrode 180 , and accordingly, the insulating layer and the contact hole forming process can be omitted. The second anode electrode 200 serves to reflect the light emitted from the organic light emitting layer 240 in an upward direction, and thus includes a material having excellent reflectivity. In addition, the second anode electrode 200 is formed to cover the top and side surfaces of the first anode electrode 180, thereby preventing the top and side surfaces of the first anode electrode 180 from being corroded. do.

Such a second anode electrode 200 may include a second lower anode electrode 201 , a second center anode electrode 202 , and a second upper anode electrode 203 .

The second lower anode electrode 201 is formed between the first anode electrode 180 and the second central anode electrode 202 . The second lower anode electrode 201 is formed to cover an upper surface and a side surface of the first anode electrode 180 , thereby preventing the first anode electrode 180 from being corroded. Accordingly, the oxidation degree of the second lower anode electrode 201 may be smaller than the oxidation degrees of the first lower anode electrode 181 and the first upper anode electrode 182 constituting the first anode electrode 180 . . That is, the material forming the second lower anode electrode 201 may be made of a material having stronger corrosion resistance than the material forming the first lower anode electrode 181 and the first upper anode electrode 182 . In addition, the second lower anode electrode 201 protects the lower surface of the second central anode electrode 202 to prevent corrosion of the lower surface of the second central anode electrode 202 . Accordingly, the oxidation degree of the second lower anode electrode 201 may be smaller than the oxidation degree of the second central anode electrode 202 . That is, the material forming the second lower anode electrode 201 may be formed of a material having stronger corrosion resistance than the material forming the second central anode electrode 202 . The second lower anode electrode 201 may be made of a transparent conductive material such as ITO, but is not necessarily limited thereto.

The second central anode electrode 202 is formed between the second lower anode electrode 201 and the second upper anode electrode 203 . The second central anode electrode 202 is made of a material having a lower resistance and excellent reflectivity than the second lower anode electrode 201 and the second upper anode electrode 203, and may be made of silver (Ag), for example. However, it is not necessarily limited thereto. The thickness of the second central anode electrode 202 having a relatively low resistance is formed to be thicker than the thickness of each of the second lower anode electrode 201 and the second upper anode electrode 203 having a relatively high resistance. It may be desirable to reduce the overall resistance of (200).

The second upper anode electrode 203 may be formed on the upper surface of the second central anode electrode 202 to prevent the upper surface of the second central anode electrode 202 from being corroded. Accordingly, the oxidation degree of the second upper anode electrode 203 may be smaller than the oxidation degree of the second central anode electrode 202 . That is, the material forming the second upper anode electrode 203 may be formed of a material having stronger corrosion resistance than the material forming the second central anode electrode 202 . The second upper anode electrode 203 may be made of a transparent conductive material such as ITO, but is not necessarily limited thereto.

The second auxiliary electrode 210 is formed on the upper surface of the first auxiliary electrode 190 . The second auxiliary electrode 210 is formed on the same layer as the above-described second anode electrode 200 . The second auxiliary electrode 210 is formed to contact the entire top and side surfaces of the first auxiliary electrode 190 . That is, a separate insulating layer is not formed between the second auxiliary electrode 210 and the first auxiliary electrode 190 , and accordingly, the insulating layer and the contact hole forming process can be omitted. The second auxiliary electrode 210 serves to lower the resistance of the cathode electrode 250 together with the first auxiliary electrode 190 . According to an embodiment of the present invention, in order to lower the resistance of the cathode electrode 250 , the required auxiliary electrode resistance is formed by stacking two auxiliary electrodes of the first auxiliary electrode 190 and the second auxiliary electrode 210 . properties can be more easily adjusted. More specifically, since the first auxiliary electrode 190 is formed on the same layer as the first anode electrode 180 , there is a limitation in increasing the size of the first auxiliary electrode 190 . Accordingly, according to an embodiment of the present invention, the resistance of the cathode electrode 150 can be effectively lowered by stacking the second auxiliary electrode 210 on the first auxiliary electrode 190 . In addition, the second auxiliary electrode 210 is formed to cover the top and side surfaces of the first auxiliary electrode 190 , thereby preventing the top and side surfaces of the first auxiliary electrode 190 from being corroded. do.

The second auxiliary electrode 210 may include a second lower auxiliary electrode 211 , a second center auxiliary electrode 212 , and a second upper auxiliary electrode 213 .

The second lower auxiliary electrode 211 is formed between the first auxiliary electrode 190 and the second center auxiliary electrode 212 . The second lower auxiliary electrode 211 is formed to cover the top and side surfaces of the first auxiliary electrode 190 , thereby preventing the first auxiliary electrode 190 from being corroded. Accordingly, the oxidation degree of the second lower auxiliary electrode 211 may be smaller than the oxidation degree of the first lower auxiliary electrode 191 and the first upper auxiliary electrode 192 constituting the first auxiliary electrode 190 . . That is, the material forming the second lower auxiliary electrode 211 may be made of a material having stronger corrosion resistance than the material forming the first lower auxiliary electrode 191 and the first upper auxiliary electrode 192 . In addition, the second lower auxiliary electrode 211 protects the lower surface of the second center auxiliary electrode 212 , thereby preventing the lower surface of the second auxiliary center electrode 212 from being corroded. Accordingly, the oxidation degree of the second lower auxiliary electrode 211 may be smaller than the oxidation degree of the second central auxiliary electrode 102 . That is, the material forming the second lower auxiliary electrode 211 may be formed of a material having stronger corrosion resistance than the material forming the second center auxiliary electrode 212 . The second lower auxiliary electrode 211 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The second central auxiliary electrode 212 is formed between the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213 . The second central auxiliary electrode 212 is made of a material having a lower resistance and excellent reflectivity than the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213, and may be made of silver (Ag), for example. However, it is not necessarily limited thereto. The thickness of the second auxiliary electrode 212 having relatively low resistance is thicker than the thickness of each of the second lower auxiliary electrode 211 and the second upper auxiliary electrode 213 having relatively high resistance. It may be desirable to reduce the overall resistance of 210 .

The second upper auxiliary electrode 213 may be formed on the upper surface of the second center auxiliary electrode 212 to prevent the upper surface of the second auxiliary center electrode 212 from being corroded. Accordingly, the oxidation degree of the second upper auxiliary electrode 213 may be smaller than the oxidation degree of the second central auxiliary electrode 212 . That is, the material forming the second upper auxiliary electrode 213 may be formed of a material having stronger corrosion resistance than the material forming the second center auxiliary electrode 212 . The second upper auxiliary electrode 213 may be made of a transparent conductive material such as ITO, but is not limited thereto.

The second upper auxiliary electrode 213 is formed of the same material and the same thickness as the second upper anode electrode 203 , and the second center auxiliary electrode 212 is the same as the second center anode electrode 202 . It is formed of the same material and the same thickness, and the second lower auxiliary electrode 211 may be formed of the same material and the same thickness as the second lower anode electrode 201 . In this case, the second auxiliary electrode 210 and the second auxiliary electrode 210 There is an advantage that the two anode electrodes 200 can be simultaneously formed through the same process.

The banks 220b and 220c are formed on the second anode electrode 200 and the second auxiliary electrode 210 . More specifically, the banks 220b and 220c include a first bank 220b covering an edge of the second anode electrode 200 and a second bank 220c covering an edge of the second auxiliary electrode 210 . include The first bank 220b and the second bank 220c are spaced apart from each other.

The first bank 220b is formed on one side and the other side of the second anode electrode 200 while exposing a portion of the top surface of the second anode electrode 200 . Here, the first bank 220b is formed to overlap the third contact hole CH3 exposing the source electrode 150 in the passivation layer 165 and the planarization layer 170 . As the first bank 220b overlaps the third contact hole CH3 in this way, it is possible to prevent moisture from permeating into the organic light emitting layer 240 .

In addition, since the first bank 220b is formed to partially expose the top surface of the second anode electrode 200, an area in which an image is displayed can be secured. Additionally, since the first bank 220b is formed on one side and the other side of the second anode electrode 200, the side surface of the second central anode electrode 202, which is vulnerable to corrosion, is prevented from being exposed to the outside. It is possible to prevent the side surface of the second central anode electrode 202 from being corroded.

The second bank 220c is formed on one side and the other side of the second auxiliary electrode 210 while exposing a portion of the top surface of the second auxiliary electrode 210 . The second bank 220c is formed to expose a portion of the top surface of the second auxiliary electrode 210 , thereby securing an electrical connection space between the second auxiliary electrode 210 and the cathode electrode 250 . . In addition, since the second bank 220c is formed on one side and the other side of the second auxiliary electrode 210, the side surface of the second center auxiliary electrode 212, which is vulnerable to corrosion, is prevented from being exposed to the outside. It is possible to prevent the side surface of the second central auxiliary electrode 212 from being corroded.

Additionally, the second bank 220c is formed between the second anode electrode 200 and the second auxiliary electrode 210 to connect the second anode electrode 200 and the second auxiliary electrode 210 to each other. Insulate.

The first bank 220b and the second bank 220c may be formed of an organic insulator such as polyimide resin, acryl resin, or benzocyclobutene (BCB), but is not necessarily limited thereto. it is not

As shown in FIG. 2 , the first bank 220b and the second bank 220c are spaced apart, and the effect thereof will be described later with reference to FIG. f in the manufacturing method according to the present invention.

The barrier rib 230 is formed on the second auxiliary electrode 210 . The partition wall 230 is spaced apart from the second bank 220c at a predetermined distance, and the second auxiliary electrode 210 and the second auxiliary electrode 210 through the space between the partition wall 230 and the second bank 220c The cathode electrodes 250 are electrically connected to each other. The second auxiliary electrode 210 and the cathode electrode 250 may be electrically connected without forming the partition wall 230 . However, when the barrier rib 230 is formed, there is an advantage in that the organic light emitting layer 240 can be more easily deposited. This will be described in more detail as follows.

If the barrier rib 230 is not formed, when depositing the organic light emitting layer 240 in order to prevent the upper surface of the second auxiliary electrode 210 from being covered by the organic light emitting layer 240 , the second A mask pattern that covers the upper surface of the auxiliary electrode 210 is required. However, when the barrier rib 230 is formed, the upper surface of the barrier rib 230 acts like an eaves when the organic light emitting layer 240 is deposited, so that the organic light emitting layer 240 is located under the eaves. ) is not deposited, so that there is no need for a mask pattern to cover the upper surface of the second auxiliary electrode 210 . That is, when viewed from the front, when the upper surface of the partition wall 230 serving as an eaves is configured to cover the spaced apart space between the partition wall 230 and the second bank 220c, the organic The light emitting layer 240 does not penetrate into the space spaced apart between the barrier rib 230 and the banks 220b and 220c, so that the second layer in the space between the barrier rib 230 and the banks 220b and 220c is spaced apart. The auxiliary electrode 210 may be exposed. In particular, since the organic light emitting layer 240 can be formed through a deposition process with excellent straightness of the deposition material such as evaporation, the barrier rib 230 and the first layer during the deposition process of the organic light emitting layer 240 . The organic emission layer 240 is not deposited in the space spaced apart between the two banks 220c.

As described above, in order for the upper surface of the barrier rib 230 to serve as an eaves, the width of the upper surface of the barrier rib 230 is greater than the width of the lower surface of the barrier rib 230 . The partition wall 230 may include a lower first partition wall 231 and an upper second partition wall 232 . The first barrier rib 231 is formed on the upper surface of the second auxiliary electrode 210 and may be formed of the same material as the wp2 bank 220c through the same process. The second partition wall 232 is formed on an upper surface of the first partition wall 231 . The width of the upper surface of the second barrier rib 232 is greater than the width of the lower surface of the second barrier rib 232, and in particular, the upper surface of the second barrier rib 232 is formed between the barrier rib 230 and the bank 220b; 220c) by being configured to cover the spaced apart space between the eaves (eaves) can serve.

The organic emission layer 240 is formed on the second anode electrode 200 . The organic light emitting layer 240 includes a hole injection layer (Hole Injecting Layer), a hole transport layer (Hole Transporting Layer), a light emitting layer (Emitting Layer), an electron transport layer (Electron Transporting Layer), and an electron injection layer (Electron Injecting Layer) can be done The structure of the organic light emitting layer 240 may be changed in various forms known in the art.

The organic emission layer 240 may extend to the top surfaces of the banks 220b and 220c. However, the organic emission layer 240 does not extend to the top surface of the second auxiliary electrode 210 while covering the top surface of the second auxiliary electrode 210 . This is because, when the organic emission layer 240 covers the top surface of the second auxiliary electrode 210 , electrical connection between the second auxiliary electrode 210 and the cathode electrode 250 becomes difficult. As described above, the organic light emitting layer 240 may be formed through a deposition process without a mask covering the upper surface of the second auxiliary electrode 210 . In this case, the organic light emitting layer 240 is formed of the barrier rib 230 . It may also be formed on the upper surface. However, the organic light emitting layer 240 is not formed in a space where the banks 220b and 220c are spaced apart.

The cathode electrode 250 is formed on the organic light emitting layer 240 . The cathode electrode 250 is formed of a transparent conductive material because it is formed on the surface from which light is emitted. The cathode electrode 250 has a high resistance because it is made of a transparent conductive material. Therefore, in order to reduce the resistance of the cathode electrode 250 , the cathode electrode 250 is connected to the second auxiliary electrode 210 . That is, the cathode electrode 250 is connected to the second auxiliary electrode 210 through a space between the partition wall 230 and the second bank 220c. Since the cathode electrode 250 can be formed through a deposition process with poor straightness of the deposition material, such as sputtering, the barrier rib 230 and the second bank during the deposition process of the cathode electrode 250 . The cathode electrode 250 may be deposited in a space spaced apart between 220c.

Although not shown in the drawings, an encapsulation layer may be additionally formed on the cathode electrode 250 to prevent penetration of moisture. For the sealing layer, various materials known in the art may be used. Also, although not shown, a color filter may be additionally formed for each pixel on the cathode electrode 250 , and in this case, white light may be emitted from the organic emission layer 240 .

A gate insulating layer 120 , an interlayer insulating layer 140 , a signal pad 300 , and a passivation layer 165 are formed in the pad area PA on the substrate 100 .

The gate insulating layer 120 is formed on the substrate 100 , and the interlayer insulating layer 140 is formed on the gate insulating layer 120 . The gate insulating layer 120 and the interlayer insulating layer 140 extend from the active area AA and are formed on the entire surface of the pad area PA.

The signal pad 300 is formed on the interlayer insulating layer 140 . The signal pad 300 may be formed on the same layer as the source electrode 150 and the drain electrode 160 of the active area AA. The signal pad 300 is exposed to the outside through the fourth contact hole CH4 provided in the passivation layer 165 and is connected to an external driver.

The signal pad 300 may include a lower signal pad 301 , a center signal pad 302 , and an upper signal pad 303 .

The lower signal pad 301 may be formed between the interlayer insulating layer 140 and the central signal pad 302 to enhance adhesion between the interlayer insulating layer 140 and the central signal pad 302 . have. In addition, the lower signal pad 301 may prevent the lower surface of the central signal pad 302 from being corroded. Accordingly, the oxidation degree of the lower signal pad 301 may be smaller than the oxidation degree of the central signal pad 302 . That is, the material forming the lower signal pad 301 may be formed of a material having stronger corrosion resistance than the material forming the center signal pad 302 . As described above, the lower signal pad 161 may be made of the same alloy (MoTi) of molybdenum and titanium as the lower source electrode 151 or the lower drain electrode 161 described above, but is not limited thereto.

The center signal pad 302 is formed between the lower signal pad 301 and the upper signal pad 303 . The central signal pad 302 may be made of copper (Cu), which is a metal having low resistance, but is not limited thereto. The central signal pad 302 may be made of a metal having a relatively low resistance compared to the lower signal pad 301 and the upper signal pad 303 , and in order to reduce the overall resistance of the signal pad 300 , the The thickness of the signal pad 302 may be formed to be thicker than the thickness of each of the lower signal pad 301 and the upper signal pad 303 .

The upper signal pad 303 may be formed on the upper surface of the central signal pad 302 to prevent the upper surface of the central signal pad 302 from being corroded. Accordingly, the oxidation degree of the upper signal pad 303 may be smaller than the oxidation degree of the central signal pad 302 . That is, the material forming the upper signal pad 303 may be formed of a material having stronger corrosion resistance than the material forming the center signal pad 302 . The upper signal pad 303 may be formed of a transparent conductive material such as ITO, but is not limited thereto.

According to an embodiment of the present invention, there is an advantage that the corrosion of the central signal pad 302, which is vulnerable to the corrosion, can be prevented. That is, the lower surface of the central signal pad 302 may be protected from corrosion by the lower signal pad 301 , and the upper surface of the center signal pad 302 may be protected from corrosion by the upper signal pad 303 . The side surface of the central signal pad 302 may be protected from corrosion by the passivation layer 165 . As described above, according to an embodiment of the present invention, the central signal pad 302 susceptible to corrosion is surrounded by the lower signal pad 301 , the upper signal pad 303 , and the passivation layer 165 . Corrosion can be prevented.

Meanwhile, the upper signal pad 303 may be formed of the same material and the same thickness as the upper source electrode 153 and/or the upper drain electrode 163 , and the central signal pad 302 is the central source. The electrode 152 and/or the center drain electrode 162 may be formed of the same material and the same thickness, and the lower signal pad 301 may be formed of the lower source electrode 151 and/or the lower drain electrode 161 . ) and the same thickness, and in this case, the signal pad 300 and the source electrode 150 and/or the drain electrode 160 can be simultaneously formed through the same process.

The passivation layer 165 is formed on the signal pad 300 . The passivation layer 165 extends from the active area AA. A fourth contact hole CH4 exposing a portion of the signal pad 300 is provided in the passivation layer 165 . In particular, since the passivation layer 165 covers the side surface of the signal pad 300 , in particular, the side surface of the central signal pad 302 which is vulnerable to corrosion, corrosion occurs on the side surface of the signal pad 300 . it can be prevented

3A to 3K are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment, which relates to the manufacturing method of the organic light emitting display device according to FIG. 2 described above. Accordingly, the same reference numerals are assigned to the same components, and repeated descriptions of parts that are repeated in materials and structures of each component will be omitted.

First, as shown in FIG. 3A , the active layer 110 , the gate insulating layer 120 , the gate electrode 130 , the interlayer insulating layer 140 , the source electrode 150 , and the drain electrode 160 on the substrate 100 . , and the signal pad 300 are sequentially formed.

More specifically, the active layer 110 is formed on the substrate 100 , the gate insulating film 120 is formed on the active layer 110 , and the gate insulating film 120 is formed on the A gate electrode 130 is formed, the interlayer insulating layer 140 is formed on the gate electrode 130 , and a first contact hole CH1 and a first contact hole CH1 are formed in the gate insulating layer 120 and the interlayer insulating layer 140 . A second contact hole CH2 is formed, and then the drain electrode 160 and the second contact hole CH2 connected to one end region of the active layer 110 through the first contact hole CH1 are formed. The source electrode 150 and the signal pad 300 connected to the other end region of the active layer 110 are formed.

Here, the active layer 110 , the gate electrode 130 , the source electrode 150 , and the drain electrode 160 are formed in the active area AA, and the gate insulating layer 120 and the interlayer insulating layer are formed. Reference numeral 140 is formed to extend from the active area AA to the pad area PA, and the signal pad 300 is formed in the pad area PA. Through this process, the thin film transistor layer T is formed in the active area AA, and the signal pad 300 is formed in the pad area PA.

The source electrode 150 includes a lower source electrode 151 , a center source electrode 152 , and an upper source electrode 153 , and the drain electrode 160 includes a lower drain electrode 161 and a center drain electrode ( 162 ) and an upper drain electrode 163 , and the signal pad 300 includes a lower signal pad 301 , a center signal pad 302 , and an upper signal pad 303 . The source electrode 150 , the drain electrode 160 , and the signal pad 300 may be simultaneously formed of the same material by the same patterning process.

Next, as shown in FIG. 3B , a passivation layer 165 is formed on the source electrode 150 , the drain electrode 160 , and the signal pad 300 , and planarization is performed on the passivation layer 165 . A layer 170 is formed. In addition, by forming a third contact hole CH3 in predetermined regions of the passivation layer 165 and the planarization layer 170 , the source electrode 150 is exposed through the third contact hole CH3 . .

The passivation layer 165 is formed to extend from the active area AA to the pad area PA, and the planarization layer 170 is formed in the active area AA. Since the thin film transistor is not formed in the pad area PA, there is little need to planarize the surface thereof. Therefore, the planarization layer 170 may not be formed in the pad area PA.

As described above, the passivation layer 165, the planarization layer 170, and the third contact hole CH3 having different patterns may be formed through a single mask process using a half-tone mask. have.

According to an embodiment of the present invention, the signal pad 300 is not exposed to the outside during the process of forming the third contact hole CH3 for exposing the source electrode 150 to the outside. Since the signal pad 300 has to be connected to an external driver, the passivation layer 165 region covering the upper surface of the signal pad 300 must be removed, and the signal pad 300 covering the upper surface of the signal pad 300 must be removed. It is also possible to perform the process of removing the passivation layer 165 region simultaneously with the process of forming the third contact hole CH3 . However, if the process of removing the passivation layer 165 region covering the upper surface of the signal pad 300 is performed simultaneously with the process of forming the third contact hole CH3, the first anode electrode in the subsequent process of FIG. 3C . The signal pad 300 may be damaged by the etchant used in the process of forming the pattern 180 and the first auxiliary electrode 190 . Accordingly, in order to prevent damage to the signal pad 300 by the etchant, the signal pad 300 is not exposed to the outside during the process of forming the third contact hole CH3 .

Next, as shown in FIG. 3C , the first anode electrode 180 and the first auxiliary electrode 190 are formed to be spaced apart from each other on the planarization layer 170 in the active area AA.

The first anode electrode 180 is formed to be connected to the source electrode 150 through the third contact hole CH3.

The first anode electrode 180 includes a first lower anode electrode 181 and a first upper anode electrode 182 , and the first auxiliary electrode 190 includes a first lower auxiliary electrode 191 and a first an upper auxiliary electrode 192 .

The first anode electrode 180 and the first auxiliary electrode 190 may be formed of the same material through the same patterning process at the same time.

Next, as shown in FIG. 3D , the upper surface electrode 200a including the lower upper surface electrode 201a, the central upper surface electrode 202a, and the upper upper surface electrode 203a is formed on the entire surface. That is, the top electrode 200a is formed on the entire surface of the planarization layer 170 of the active region, the first anode electrode 180 , and the first auxiliary electrode 190 including the passivation 165 of the pad region.

The top electrode 200a is patterned to cover top surfaces and side surfaces of the first anode electrode 180 and the first auxiliary electrode 190 . In this case, the upper electrode 200a is finally divided into a second anode electrode 200 and a second auxiliary electrode 210 through subsequent processes.

That is, the lower upper surface electrode 201a is finally divided into a second lower anode electrode 201 and a second lower auxiliary electrode 211 , and the center upper surface electrode 202a is finally the second center anode electrode 202 . ) and a second central auxiliary electrode 212 , and the upper upper surface electrode 203a is finally divided into a second upper anode electrode 203 and a second upper auxiliary electrode 213 .

Next, as shown in FIG. 3E , a photoresist 220a pattern is formed on the entire surface except for a part of the active area AA and the pad area PA.

The photoresist pattern 220a includes a region having a relatively thin first thickness t1 and a region having a relatively thick second thickness t2.

The region having the first thickness t1 overlaps with the side of the pad region, the central portion of the top electrode 200a overlapping the first anode electrode 180 of the active region, and the first auxiliary electrode 190 . Corresponds to one central side of the upper electrode. The region having the second thickness t2 corresponds to the region having the first thickness t1.

Specifically, the region having the second thickness t2 corresponds to the side of the top electrode 200a overlapping the first anode electrode 180 and the side of the top electrode overlapping the first auxiliary electrode 190, In particular, a region having a second thickness t2 protrudes from the center of the central portion of the upper electrode overlapping the first auxiliary electrode 190 to form a barrier rib.

As described above, the photoresist pattern 220a having a structure including a region having a first thickness t1 and a region having a second thickness t2 but not formed in a specific region is formed through a half-tone mask process. can be obtained

Next, as can be seen in FIG. 3F , using the photoresist pattern 220a as a mask, a photoresist pattern ( 220a) is not formed, the region is removed. That is, by removing the top electrode 200a that does not overlap the top surface of the first anode electrode 180 and the top surface of the first auxiliary electrode 190, the first top electrode 200a is formed with the second anode electrode 200 and the second auxiliary electrode ( 210).

At the same time, a fourth contact hole CH4 is formed by removing the passivation layer 165 region covering the upper surface of the signal pad 300 using the photoresist pattern 220a as a mask. That is, by forming the fourth contact hole CH4 in the passivation layer 165 , the signal pad 300 is exposed to the outside through the fourth contact hole CH4 . The signal pad 300 may be connected to an external driver through the fourth contact hole CH4 .

In addition, when the photoresist pattern 220a is subjected to an ashing process, the photoresist pattern 220a is removed from a region having a relatively thin first thickness t1, and a relatively thick second thickness t2 is obtained. The photoresist pattern 220a remains in the region having , so that the banks 220b and 220c and the first barrier rib 231 are formed by the remaining photoresist pattern 220a.

As described above, according to an embodiment of the present invention, since the photoresist pattern 220a is separated into the second anode electrode 200 and the second auxiliary electrode 210, respectively, the fourth contact hole ( CH4), the banks 220b and 220c, and the first partition wall 231 may be formed together. That is, by exposing the upper surface electrode 200a through a space in which the first bank 220b and the second bank 220c are spaced apart, the exposed upper surface electrode 200a and the pad 300 in the spaced space are overlapped with each other. It is possible to simultaneously remove the upper electrode 200a and the passivation layer 165 . Therefore, according to one embodiment of the present invention, there is an advantage in that the number of mask processes can be reduced.

Next, as shown in FIG. 3G , the banks 220b and 220c are connected to the planarization layer 170 using a thermal reflow process.

The thermal reflow process refers to a process of deforming a structure using a high temperature. As the sides of the banks 220b and 220c melt due to the high temperature, the bond between the polymers of the photoresist 220a is partially broken. Due to this action, the edge of the photoresist pattern 220a melts and contracts and is connected to the planarization layer 170 .

Next, as shown in FIG. 3H , the remaining upper electrode 200a in the pad area is removed. That is, the upper electrode 200a is removed by irradiating a laser to the surface of the pad region in contact with the planarization layer 170 .

Next, as shown in FIG. 3I , the second partition wall 232 is formed on the first partition wall 231 to complete the partition wall 230 including the first partition wall 231 and the second partition wall 232 . .

The partition wall 230 is formed to be spaced apart from the second bank 220c by a predetermined distance, and thus, a predetermined space is provided between the partition wall 230 and the second bank 220c.

In order for the upper surface of the barrier rib 230 to serve as an eaves, the width of the upper surface of the second barrier rib 232 is greater than the width of the lower surface of the second barrier rib 232 . In particular, when viewed from the front, the upper surface of the second barrier rib 232 covers the spaced apart space between the barrier rib 230 and the second bank 220c, thereby depositing the organic light emitting layer 240 to be described later. During the process, it is possible to prevent the organic emission layer 240 from being deposited in a space spaced apart from the partition wall 230 and the second bank 220c.

Next, as shown in FIG. 3J , an organic emission layer 240 is formed on the second anode electrode 200 . The organic light emitting layer 240 is formed through a deposition process having excellent straightness of the deposition material, such as evaporation. Accordingly, the organic light emitting layer 240 is formed on the banks 220b and 220c and the barrier ribs 230 . It may be deposited on the upper surface of , but it is not deposited in a space spaced apart from the barrier rib 230 and the second bank 220c. That is, since the upper surface of the barrier rib 230 functions as an eaves when the organic light emitting layer 240 is deposited, the organic light emitting layer 240 without a mask pattern covering the upper surface of the second auxiliary electrode 210 . ), it is possible to prevent the organic light emitting layer 240 from being deposited in the space between the partition wall 230 and the second bank 220c.

Next, as shown in FIG. 3K , a cathode electrode 250 is formed on the organic emission layer 240 .

The cathode electrode 250 is formed to be connected to the second auxiliary electrode 210 through a space spaced apart between the partition wall 230 and the second bank 220c. The cathode electrode 250 may be formed through a deposition process in which a deposition material has poor straightness, such as sputtering. Accordingly, during the deposition process of the cathode electrode 250, the barrier rib 230 and the second The cathode electrode 250 may be deposited in a space spaced apart between the banks 220c.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made within the scope without departing from the technical spirit of the present invention. . Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to illustrate, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not restrictive. The protection scope of the present invention should be construed by the claims, and all technical ideas within the scope equivalent thereto should be construed as being included in the scope of the present invention.

100: substrate T: thin film transistor layer
165: passivation layer 170: planarization layer
180: first anode electrode 190: first auxiliary electrode
200: second anode electrode 210: second auxiliary electrode
220: bank 230: bulkhead
240: organic light emitting layer 250: cathode electrode
300: signal pad

Claims (13)

a substrate including an active region and a pad region;
a planarization layer provided in the active region of the substrate;
an anode electrode provided on the planarization layer;
an organic light emitting layer provided on the anode electrode;
a cathode electrode provided on the organic light emitting layer;
an auxiliary electrode connected to the cathode electrode and provided on the same layer as the anode electrode; and
a first bank covering an edge of the anode electrode and a second bank covering an edge of the auxiliary electrode;
The first bank and the second bank are spaced apart from each other, so that a portion of the top surface of the planarization layer is exposed,
The auxiliary electrode includes a first auxiliary electrode and a second auxiliary electrode provided to cover an upper surface and a side surface of the first auxiliary electrode,
The anode electrode includes a first anode electrode and a second anode electrode provided to cover an upper surface and a side surface of the first anode electrode,
The first anode electrode includes a first upper anode electrode and a first lower anode electrode in contact with the entire lower surface of the first upper anode electrode,
and the first lower anode electrode has a lower oxidation degree than the first upper anode electrode. According to claim 1,
A contact hole is provided in the planarization layer under the anode electrode,
The first bank overlaps the contact hole. According to claim 1,
a signal pad provided in a pad region of the substrate; and
and a passivation layer provided to cover a side surface of the signal pad while having a contact hole so that an upper surface of the signal pad can be exposed;
The signal pad includes a lower signal pad, a center signal pad, and an upper signal pad, and the center signal pad is surrounded by the lower signal pad, the upper signal pad, and the passivation layer. 4. The method of claim 3,
The oxidation degree of the lower signal pad and the upper signal pad is smaller than the oxidation degree of the center signal pad, and the resistance of the center signal pad is lower than the resistance of the lower signal pad and the upper signal pad. delete According to claim 1,
The first auxiliary electrode includes a first lower auxiliary electrode and a first upper auxiliary electrode, and the second auxiliary electrode includes a second lower auxiliary electrode, a second center auxiliary electrode, and a second upper auxiliary electrode. organic light emitting display device. 7. The method of claim 6,
The oxidation degree of the first lower auxiliary electrode is smaller than the oxidation degree of the first upper auxiliary electrode, and the resistance of the first upper auxiliary electrode is lower than the resistance of the first lower auxiliary electrode;
The oxidation degrees of the second lower auxiliary electrode and the second upper auxiliary electrode are smaller than the oxidation degrees of the second auxiliary center electrode, and the resistance of the second auxiliary center electrode is the second lower auxiliary electrode and the second upper auxiliary electrode. An organic light emitting diode display that is lower than the resistance of the electrode. According to claim 1,
It is provided on the auxiliary electrode and is made to further include a partition wall provided to be spaced apart from the second bank,
The cathode electrode is connected to the auxiliary electrode through a space spaced apart between the second bank and the barrier rib. forming a source electrode and a signal pad on a substrate;
A contact hole for exposing the source electrode to the outside by forming a passivation layer on the source electrode and the signal pad, forming a planarization layer on the passivation layer, and removing predetermined regions of the passivation layer and the planarization layer; forming process;
forming a first anode electrode connected to the source electrode and a first auxiliary electrode spaced apart from the first anode electrode;
forming a top electrode covering the top and side surfaces of the first anode electrode and the top and side surfaces of the first auxiliary electrode;
forming a photoresist pattern on the upper electrode except for a partial region;
forming a contact hole exposing the signal pad to the outside by removing a predetermined region of the passivation layer using the photoresist pattern as a mask;
dividing the top electrode into a second anode electrode and a second auxiliary electrode using the photoresist pattern as a mask;
ashing the photoresist pattern to form a bank using the remaining photoresist pattern;
a thermal reflow process for connecting the bank with the planarization layer;
forming an organic light emitting layer on the second anode electrode; and
forming a cathode electrode connected to the second auxiliary electrode on the organic light emitting layer;
The first anode electrode includes a first upper anode electrode and a first lower anode electrode having a lower oxidation degree than the first upper anode electrode,
The bank includes a first bank covering an edge of the second anode electrode and a second bank covering an edge of the second auxiliary electrode,
The first bank and the second bank are spaced apart from each other to expose a portion of a top surface of the planarization layer. 10. The method of claim 9,
The method of claim 1 , wherein the photoresist pattern includes a region having a relatively thick first thickness and a region having a relatively thin second thickness. 11. The method of claim 10,
The photoresist pattern remaining by the ashing process of the photoresist pattern corresponds to the region having the second thickness. 10. The method of claim 9,
The forming of the bank may include forming a first barrier rib spaced apart from the bank by using the remaining photoresist pattern. 13. The method of claim 12,
forming a second barrier rib on the first barrier rib to form a barrier rib including the first barrier rib and the second barrier rib;
The organic light emitting layer is not deposited in a space spaced apart from the bank and the barrier rib, and the cathode electrode is deposited in a space spaced apart from the bank and the barrier rib.

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