KR102413443B1 - Apparatus and Method for processing substrate - Google Patents

Abstract

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of preventing leaning of a pattern formed on a substrate and improving substrate processing efficiency.
The substrate processing apparatus of the present invention for realizing this is a process chamber in which a substrate coated with a chemical is loaded, a substrate processing process is performed using a supercritical fluid, and a supercritical fluid having a different temperature is supplied to the process chamber Includes supply.
A substrate processing method according to an embodiment of the present invention includes a first step of loading a substrate coated with a chemical into a process chamber, a second step of supplying a supercritical fluid of a first set temperature into the process chamber, and the second step When the pressure inside the process chamber reaches the process pressure as the supercritical fluid of the first preset temperature is supplied, the third step of supplying the supercritical fluid of a second preset temperature higher than the first preset temperature into the process chamber include

Description

Substrate processing apparatus and substrate processing method {Apparatus and Method for processing substrate}

The present invention relates to a substrate processing apparatus and a substrate processing method using a supercritical fluid, and more particularly, to a substrate processing apparatus and a substrate processing method capable of preventing a leaning phenomenon of a pattern formed on a substrate and improving substrate processing efficiency is about

In general, cleaning is classified into wet cleaning and dry cleaning, and among them, wet cleaning is widely used in the semiconductor manufacturing field. Wet cleaning is a method of continuously removing contaminants by using chemicals suitable for contaminants in each step, and a large amount of acid and alkali solution is used to remove contaminants remaining on the substrate.

However, these chemicals used in wet cleaning not only adversely affect the environment, but also cause a significant increase in the production cost of products due to their complicated processes. As the pattern of the microstructure is narrowed and collapsed due to tension, there is a problem in that contaminants cannot be removed effectively.

As a way to solve this problem, recently, a dry cleaning method using carbon dioxide, which is a non-toxic, non-flammable, inexpensive and environmentally friendly material, as a solvent has been developed. Carbon dioxide has a low critical temperature and critical pressure, so it can easily reach the supercritical state, and the interfacial tension is close to zero (0). It is easy and has the advantage of being able to simply separate the solvent from the solute because it is changed to a gaseous state by reduced pressure.

On the other hand, the process chamber in which the substrate processing using the supercritical fluid is performed is made of a thick metal material to withstand high pressure, and has a structure in which the temperature inside the process chamber cannot be easily changed. Therefore, the process chamber is preheated so that the fluid is supplied and the fluid is maintained in a supercritical state at the same time. At this time, the preheating temperature of the process chamber is set to the maximum temperature under a condition slightly lower than the vaporization point of the chemical in order to maximize the solubility of the chemical applied to the target substrate. Therefore, before or at the same time as the supercritical fluid is supplied into the process chamber, the chemical applied to the substrate evaporates from the edge of the substrate, which is the weakest, and this causes a leaning phenomenon in which the patterns formed on the substrate are stenciled and collapsed. There was a negative effect that led to process failure.

As described above, the prior art related to a substrate processing apparatus and a substrate processing method using a supercritical fluid is disclosed in Patent Registration No. 10-0822373, Registration Patent No. 10-1384320, and Patent Publication No. 10-2017-0006570.

In the related art, including the prior art, the chemical solution applied to the substrate in the initial stage when the supercritical fluid is supplied into the process chamber after the substrate to be processed is loaded into the process chamber is evaporated by the high-temperature atmosphere inside the process chamber, and the substrate The configuration to prevent the leaning phenomenon of the pattern formed in the situation is insufficient.

The present invention has been devised to solve the above problems, and it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of improving substrate processing efficiency while preventing a leaning phenomenon of a pattern formed on a substrate.

The substrate processing apparatus of the present invention for realizing the object as described above includes a process chamber in which a substrate coated with a chemical solution is loaded, a substrate processing process is performed using a supercritical fluid, and a supercritical fluid having a different temperature. A supply unit for supplying the process chamber may be included, and the supply unit may include a plurality of supply units.

The plurality of supply units selectively supply supercritical fluids of different temperatures to the process chamber according to process steps. That is, when the supercritical fluid is supplied into the process chamber, the supercritical fluid of the first set temperature is supplied to prevent evaporation of the chemical applied to the substrate, and when the pressure inside the process chamber reaches the process pressure, the first The substrate processing is performed by supplying a supercritical fluid having a second set temperature higher than the first set temperature into the process chamber. In addition, at the time when the substrate processing is completed, the supercritical fluid of the third set temperature higher than the second set temperature is supplied into the process chamber to prevent the temperature of the chemical from dropping to the substrate and then the remaining fluid is discharged. can

In addition, in the step of replacing the chemical solution with the supercritical fluid, the step of supplying the supercritical fluid of the high temperature second set temperature or the third set temperature so as to increase the solubility by reducing the intermolecular attraction of the chemical solution, and the solubility of the supercritical fluid The step of supplying a supercritical fluid of a low temperature first set temperature may be performed to increase It can be configured to improve the drying efficiency of

A substrate processing method according to an embodiment of the present invention includes a first step of loading a substrate coated with a chemical solution into a process chamber, a second step of supplying a supercritical fluid of a first set temperature into the process chamber, and the When the pressure inside the process chamber reaches the process pressure as the supercritical fluid of the first preset temperature is supplied, a third step of supplying the supercritical fluid of a second preset temperature higher than the first preset temperature into the process chamber is composed by

A substrate processing method according to another embodiment of the present invention includes a first step of loading a substrate coated with a chemical into a process chamber, a second step of supplying a supercritical fluid of a first set temperature into the process chamber, the first When the pressure inside the process chamber reaches the process pressure as the supercritical fluid of the preset temperature is supplied, a third step of supplying the supercritical fluid of a second preset temperature higher than the first preset temperature into the process chamber, the A fourth step of supplying the supercritical fluid of a first set temperature into the process chamber, and when the substrate processing by the fourth step is completed, the supercritical fluid of a third set temperature higher than the second set temperature is introduced into the process chamber and a fifth step of discharging the fluid remaining in the process chamber after being supplied into the chamber.

According to the substrate processing apparatus and substrate processing method according to the present invention, in the initial stage when the supercritical fluid is supplied into the process chamber, the low-temperature supercritical fluid is supplied to prevent evaporation of the chemical solution applied to the substrate, thereby preventing pattern leaching. In addition, after the pressure in the process chamber reaches the process pressure, a high temperature supercritical fluid is supplied, and the substrate processing performance can be improved by supplying the supercritical fluid by varying the temperature according to the process step.

In addition, by varying the temperature of the supercritical fluid supplied into the process chamber and at the same time forming a fluctuating pressure inside the process chamber, the dissolution reaction between the supercritical fluid and the chemical solution can be made more smoothly, thereby maximizing the substrate processing efficiency.

1 is a block diagram of a substrate processing apparatus according to a first embodiment of the present invention;
2 is a graph showing changes in temperature and pressure in a substrate processing method using a substrate processing apparatus according to a first embodiment of the present invention;
3 is a block diagram of a substrate processing apparatus according to a second embodiment of the present invention;
4 is a graph showing changes in temperature and pressure in an embodiment of a substrate processing method using a substrate processing apparatus according to a second embodiment of the present invention;
5 is a graph showing changes in temperature and pressure in another embodiment of a substrate processing method using a substrate processing apparatus according to a second embodiment of the present invention;
6 is a graph showing changes in temperature and pressure in another embodiment of a substrate processing method using a substrate processing apparatus according to a second embodiment of the present invention;
7 is a block diagram of a substrate processing apparatus according to a third embodiment of the present invention;
8 is a cross-sectional view of a supply unit provided in a substrate processing apparatus according to a third embodiment of the present invention;

Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

Referring to FIG. 1 , in the substrate processing apparatus 1-1; 1 according to the first embodiment of the present invention, a substrate W coated with a chemical solution (not shown) is loaded therein, and using a supercritical fluid It includes a process chamber 100 in which a substrate processing process is performed, and a supercritical fluid supply unit 200 - 1 ; 200 for supplying a supercritical fluid having a different temperature to the process chamber 100 .

Supercritical carbon dioxide (SCCO2) may be used as the supercritical fluid. However, the type of the supercritical fluid is not limited thereto, and may be replaced with various types of known supercritical fluid.

The process chamber 100 includes a housing 110 having a substrate processing space provided therein, and a stage 120 supporting the substrate W in the housing 110 .

In the process chamber 100, the drying process of the substrate W using the supercritical fluid is performed, and the cleaning and drying processes of the substrate W may be performed together.

A first inlet 101 and a second inlet 102 through which the supercritical fluid flows are formed on one side and an upper portion of the process chamber 100, and the remaining fluid after the process is discharged on the other side of the process chamber 100 An outlet 103 is formed. The outlet 103 is provided with a discharge line 104 and an opening/closing valve V for opening and closing the pipe of the discharge line 104 .

In this embodiment, the supercritical fluid supply unit 200 - 1; 200 includes a first supply unit 210 and a second supply unit 220 for selectively supplying a supercritical fluid having a different temperature to the process chamber 100 . do. The first supply unit 210 supplies the supercritical fluid at a first set temperature, and the second supply unit 220 supplies the supercritical fluid at a second set temperature higher than the first set temperature.

Between the first supply part 210 and the first inlet 101, a first supply line L11 to which a supercritical fluid is supplied, and a first valve V11 for opening and closing the pipe of the first supply line L11 , and a first pressure adjusting unit R1 for adjusting the pressure of the supercritical fluid supplied to the first inlet 101 is provided. A second supply line (L12) to which a supercritical fluid is supplied between the first supply part 210 and the second inlet (102), and a second valve (V12) for opening and closing the conduit of the second supply line (L12) And, a second pressure control unit (R2) for adjusting the pressure of the supercritical fluid supplied to the second inlet (102) is provided.

A third supply line (L13) to which a supercritical fluid is supplied between the second supply unit 220 and the second inlet (102), and a third valve (V13) for opening and closing the pipe of the third supply line (L13) is provided, and the third supply line (L13) is connected to the second supply line (L12) at the front end of the second pressure control unit (R2). A fourth supply line L14 to which the supercritical fluid is supplied between the second supply unit 220 and the second inlet 101, and a fourth valve V14 for opening and closing the pipeline of the fourth supply line L14 is provided, and the fourth supply line (L14) is connected to the first supply line (L11) at the front end of the first pressure control unit (R1).

The first supply unit 210 and the second supply unit 220 selectively supply supercritical fluids having different temperatures into the process chamber 100 . When the supercritical fluid is supplied by the first supply unit 210, the first valve V11 and the second valve V12 are opened, and the third valve V13 and the fourth valve V14 are closed. do. When the supercritical fluid is supplied by the second supply unit 220, the third valve V13 and the fourth valve V14 are opened, and the first valve V11 and the second valve V12 are closed. do.

In the initial stage when the supercritical fluid is supplied into the process chamber 100, the supercritical fluid of a first set temperature is supplied by the first supply unit 210, and the supercritical fluid is supplied by the first supply unit 210. Accordingly, when the pressure inside the process chamber 100 gradually increases to reach the process pressure, the supercritical fluid of the second set temperature is supplied by the second supply unit 220 .

The first set temperature may be set to a temperature lower than the process temperature of the process chamber 100 , and the second set temperature may be set to the process temperature. Here, the 'process pressure' and the 'warm temperature' are the pressure inside the process chamber 100 while the substrate processing space inside the process chamber 100 is entirely maintained in a supercritical state and the processing of the substrate W is performed. and temperature.

The supercritical fluid may be supercritical carbon dioxide, the first set temperature may be set to 50 °C to 70 °C, and the second set temperature may be set to 70 °C to 200 °C.

Hereinafter, a substrate processing method in the substrate processing apparatus 1-1; 1 according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2 .

A substrate processing method according to an embodiment of the present invention includes a first step of loading a substrate W coated with a chemical solution into the process chamber 100, and introducing a supercritical fluid of the first set temperature into the process chamber 100 In the second step of supplying, and when the pressure inside the process chamber 100 reaches the process pressure as the supercritical fluid of the first preset temperature is supplied, the supercritical fluid having a second preset temperature higher than the first preset temperature Including a third step of supplying the into the process chamber (100).

In FIG. 2, ① represents a pressurizing step of supplying the supercritical fluid of a first set temperature into the process chamber 100 as the second step, and ② represents the third step of applying the supercritical fluid of a second set temperature to the process chamber (100) represents the step of dissolving the chemical solution in the supercritical fluid and replacing it by supplying it into the process chamber 100 by opening the discharge valve (V) provided in the discharge line 104 after the substrate processing process is completed. It shows a vent step for discharging the fluid remaining inside.

Meanwhile, the target substrate W is loaded into the process chamber 100 in a state in which a chemical such as isopropyl alcohol (IPA) is applied. That is, the substrate W is subjected to a cleaning and rinsing process before being brought into the process chamber 100. The pure water (DIW) used in the rinsing process is reactive (solubility) with the supercritical fluid. Since this is low, the pure water (DIW) is substituted with a chemical solution such as isopropyl alcohol (IPA) in order to increase the reactivity with the supercritical fluid in the substrate drying process performed in the process chamber 100 .

The chemical serves to prevent stenosis and collapse of the patterns formed on the substrate (W).

In the process of loading the substrate W into the process chamber 100 , the substrate processing space inside the process chamber 100 communicates with the atmosphere so that the temperature and pressure of the substrate processing space are equal to the temperature and pressure of the atmosphere. .

After the substrate W is loaded into the process chamber 100, the substrate processing space of the process chamber 100 is sealed, and the temperature of the substrate processing space is set to a supercritical temperature state before the supercritical fluid is supplied. Heating by a heater (not shown) is made so that The heater is maintained in an operating state until the substrate processing process using the supercritical fluid is completed. In this way, in a state in which the process chamber 100 is preheated by the heater, the substrate W to which the chemical is applied is loaded into the process chamber 100, before the supercritical fluid is supplied or in the initial stage in which the supercritical fluid is supplied. The leaning phenomenon in which the pattern (not shown) formed on the substrate W is constricted and collapsed may be caused by the evaporation of the chemical solution applied to the substrate W as the temperature rises.

As a configuration to prevent this, when the supercritical fluid of the first set temperature, which is a low temperature, is supplied from the first supply unit 210 into the process chamber 100 in the second step (pressurization step), the substrate (W) It is possible to prevent the temperature rise and the evaporation of the chemical and the resulting pattern leaching.

That is, when the chemical is heated and evaporated in the initial stage in which the supercritical fluid is supplied, the pattern leaching phenomenon occurs, but the supercritical fluid of the first set temperature, which is a low temperature, is supplied in the initial stage in which the supercritical fluid is supplied. Then, before the entire space inside the process chamber 100 is filled with the supercritical fluid, evaporation by heating of the chemical can be prevented. And, after the entire space inside the process chamber 100 is filled with the supercritical fluid, when the supercritical fluid penetrates between the patterns and dissolves the chemical and evaporates, the surface tension of the supercritical fluid is close to zero. It is possible to stably dry the substrate W without it.

Hereinafter, the configuration of the substrate processing apparatus 1-2; 1 according to the second embodiment of the present invention will be described with reference to FIG. 3, but the same reference numerals are assigned to the same members as those of the first embodiment, and A duplicate description will be omitted.

The substrate processing apparatus (1-2; 1) according to the second embodiment of the present invention is a process chamber 100 in which a substrate W coated with a chemical solution is loaded, and a substrate processing process is performed using a supercritical fluid. and a supercritical fluid supply unit 200 - 2; 200 for supplying a supercritical fluid having a different temperature to the process chamber 100.

In this embodiment, the supercritical fluid supply unit 200-2; 200 includes a first supply unit 230 and a second supply unit 240 for selectively supplying a supercritical fluid having a different temperature to the process chamber 100, and A third supply unit 250 is included. The first supply unit 230 supplies the supercritical fluid at a first set temperature, and the second supply unit 240 supplies the supercritical fluid at a second set temperature higher than the first set temperature, and the third The supply unit 250 supplies the supercritical fluid at a third set temperature higher than the second set temperature.

A first supply line L21 to which a supercritical fluid is supplied between the first supply unit 210 and the first inlet 101, and a first valve V21 for opening and closing the pipeline of the supply supply supply line L11 and a second valve V22, and a first pressure adjusting unit R1 for adjusting the pressure of the supercritical fluid supplied to the first inlet 101 are provided.

A second supply line L22 to which a supercritical fluid is supplied between the second supply unit 240 and the second inlet 102, and a third valve V23 for opening and closing the conduit of the second supply line L22 and a fourth valve (V24) and a second pressure adjusting unit (R2) for adjusting the pressure of the supercritical fluid supplied to the second inlet (102) are provided.

The third supply unit 250 is connected to the second supply line L22 positioned between the third valve V23 and the fourth valve V24, and the first valve V21 and the second valve V22. ) is connected to the third supply line L23 connected to the first supply line L21 located between.

The first supply unit 230 , the second supply unit 240 , and the third supply unit 250 selectively supply supercritical fluids having different temperatures into the process chamber 100 . When the supercritical fluid is supplied by the first supply unit 230 , the first valve V21, the second valve V22, and the fourth valve V24 are opened, and the third valve V23 and the fifth valve are opened. (25) becomes a closed state. When the supercritical fluid is supplied by the second supply unit 240 , the third valve V23, the second valve V22, and the fourth valve V24 are opened, and the first valve V21 and the fifth valve are opened. (V25) is closed. When the supercritical fluid is supplied by the third supply unit 250 , the fifth valve V25, the second valve V22, and the fourth valve V24 are opened, and the first valve V21 and the third valve (V23) becomes a closed state.

In one embodiment, as shown in FIGS. 4 and 5 , in the initial stage when the supercritical fluid is supplied into the process chamber 100 , the supercritical fluid of a first set temperature is supplied by the first supply unit 230 , and , when the pressure inside the process chamber 100 reaches the process pressure as the supercritical fluid is supplied by the first supply unit 230 , the supercritical fluid of the second set temperature is supplied by the second supply unit 240 . When the substrate processing process using the supercritical fluid of the second set temperature is completed, the supercritical fluid of the third set temperature is supplied for a predetermined time by the third supply unit 250 and then the process chamber 100 The fluid remaining therein may be configured to be discharged. By preventing the evaporation of the chemical solution by supplying the supercritical fluid at the first set temperature, the pattern leaning phenomenon can be prevented, and the chemical solution is replaced by the supply of the supercritical fluid at the second set temperature, and the third It is possible to prevent the chemical solution from falling to the substrate W by preventing the temperature of the chemical from falling by supplying the supercritical fluid of the set temperature.

In another embodiment, as shown in FIG. 6 , in the initial stage when the supercritical fluid is supplied into the process chamber 100 , the supercritical fluid of a first set temperature is supplied by the first supply unit 230 , and the When the pressure inside the process chamber 100 reaches the process pressure as the supercritical fluid is supplied by the first supply unit 230 , the supercritical fluid having a second set temperature for a time set by the second supply unit 240 . After being supplied, the supercritical fluid of the first set temperature is supplied for a time set by the first supply unit 230, and when the substrate processing process using the supercritical fluid of the first set temperature is completed, the third supply unit After supplying the supercritical fluid of the third set temperature by 250 , the fluid remaining in the process chamber 100 may be discharged.

By supplying the supercritical fluid of the first set temperature, evaporation of the chemical can be prevented and the pattern leaching can be prevented, and the intermolecular attraction of the chemical is reduced by supplying the supercritical fluid of the second set temperature. The solubility can be increased, and the solubility of the supercritical fluid is increased by the supply of the supercritical fluid of the first set temperature, which is subsequently performed, so that the substitution of the chemical solution is made more smoothly, and the supercritical of the third set temperature It is possible to prevent the chemical solution from falling to the substrate W by preventing the temperature drop of the chemical solution by supplying the fluid.

The first set temperature may be set to a temperature lower than the process temperature of the process chamber 100, the second set temperature may be set to the process temperature, and the third set temperature may be set to a temperature higher than the process temperature have.

The supercritical fluid is supercritical carbon dioxide, the first set temperature is 50 ℃ ~ 70 ℃, the second set temperature is 70 ℃ ~ 100 ℃, the third set temperature is set to 100 ℃ ~ 200 ℃ can

On the other hand, as shown in FIGS. 4 and 5, when the substrate processing process is performed in the process chamber 100, for the purpose of making the dissolution reaction between the supercritical fluid and the chemical solution more smoothly, the process chamber ( 100) It is possible to form a fluctuating pressure inside, and this fluctuating pressure may be implemented by the pressure control in the first and second pressure adjusting units R1 and R2 or the opening and closing operation of the discharge valve V.

Hereinafter, a substrate processing method in the substrate processing apparatus 1-2; 1 according to the second embodiment of the present invention will be described with reference to FIGS. 4 to 6 .

4 and 5, in the substrate processing method according to another embodiment of the present invention, a first step of loading a substrate W coated with a chemical solution into the process chamber 100, the second of the first set temperature In the second step of supplying the critical fluid into the process chamber 100, when the pressure inside the process chamber 100 reaches the process pressure as the supercritical fluid of the first set temperature is supplied, higher than the first set temperature The third step of supplying the supercritical fluid of the second set temperature into the process chamber 100, and when the substrate processing by the third step is completed, the supercritical fluid of the third set temperature higher than the second set temperature and a fourth step of discharging the fluid remaining in the process chamber 100 after being supplied into the process chamber 100 .

In FIGS. 4 and 5, ① represents a pressurizing step of supplying the supercritical fluid of a first set temperature into the process chamber 100 as the second step, and ② represents the third step of the supercritical fluid of a second set temperature. represents the step of dissolving and replacing the chemical solution in the supercritical fluid by supplying it into the process chamber 100, and ③ is after the completion of the third step, the supercritical fluid of the third set temperature is supplied into the process chamber 100 and then discharged The venting step of discharging the fluid remaining in the process chamber 100 by opening the discharge valve V provided in the line 104 is shown.

Referring to FIG. 6 , in the substrate processing method according to another embodiment of the present invention, a first step of loading a substrate W coated with a chemical solution into the process chamber 100, a supercritical fluid of the first set temperature In the second step of supplying into the process chamber 100, when the pressure inside the process chamber 100 reaches the process pressure as the supercritical fluid of the first set temperature is supplied, the second step higher than the first set temperature A third step of supplying the supercritical fluid of a set temperature into the process chamber 100, a fourth step of supplying the supercritical fluid of the first set temperature into the process chamber 100 following the third step, and the second step When the substrate processing in step 4 is completed, a fifth step of supplying the supercritical fluid having a third set temperature higher than the second set temperature into the process chamber 100 and then discharging the fluid remaining in the process chamber 100 includes

In FIG. 6, ① indicates a pressurizing step of supplying a supercritical fluid of a first set temperature into the process chamber 100 as the second step, and ② -1 is the third step of a supercritical fluid of a second set temperature. It represents the step of replacing the chemical solution with the supercritical fluid by supplying it into the process chamber 100 to increase the solubility of the chemical solution by reducing the intermolecular attraction of the chemical solution, and ②-2 is the fourth step as the supercritical of the first set temperature. By supplying the fluid into the process chamber 100 to increase the solubility of the supercritical fluid, it represents the step of substituting the chemical solution with the supercritical fluid secondarily, and ③ is the fifth step, wherein the supercritical fluid of the third set temperature is transferred to the process chamber ( 100) shows a venting step for discharging the fluid remaining in the process chamber 100 by opening the discharge valve V provided in the discharge line 104 after supplying into the inside.

As described above, in the substrate processing method according to the present invention, when the supercritical fluid is supplied into the process chamber 100, a low-temperature supercritical fluid is supplied to prevent evaporation of the chemical applied to the substrate and leaning of the pattern due to this. After the pressure in the process chamber 100 reaches the process pressure, a high-temperature supercritical fluid is supplied, but the substrate processing performance can be improved by varying the temperature of the supercritical fluid according to the process step and supplying it. .

In addition, by varying the temperature of the supercritical fluid supplied into the process chamber 100 and at the same time forming a fluctuating pressure inside the process chamber 100, the dissolution reaction between the supercritical fluid and the chemical solution is made more smoothly, so that the substrate is dried efficiency can be maximized.

Hereinafter, the configuration of the substrate processing apparatus 1-3; 1 according to the third embodiment of the present invention will be described with reference to Figs. and a redundant description thereof will be omitted.

In the substrate processing apparatus 1-3; 1 according to the third embodiment of the present invention, a substrate W coated with a chemical solution (not shown) is loaded, and a substrate processing process is performed using a supercritical fluid. It includes a process chamber 100 and a supercritical fluid supply unit 200 - 3; 200 for supplying a supercritical fluid having a different temperature to the process chamber 100 .

In the present embodiment, the supercritical fluid supply unit 200-3; 200 includes a first supply unit 270, a second supply unit 280, and a second supply unit 270 for selectively supplying a supercritical fluid having a different temperature to the process chamber 100. 3 includes a supply unit 290 . The first supply unit 270 supplies the supercritical fluid at a first set temperature, and the second supply unit 280 supplies the supercritical fluid at a second set temperature higher than the first set temperature, and the third The supply unit 290 supplies the supercritical fluid at a third set temperature higher than the second set temperature. In addition, a high-pressure pump 260 for pressurizing the fluid supplied to the first supply unit 270 , the second supply unit 280 , and the third supply unit 290 to a supercritical pressure is further included.

In this embodiment, the first supply unit 270 , the second supply unit 280 , and the third supply unit 290 pass through the high pressure pump 260 and convert the liquid pressurized to a supercritical pressure to a critical temperature or higher. It is heated to a supercritical temperature state to be converted into a supercritical fluid, and it is composed of a pipe 271 through which a liquid fluid passes and is heated, and the pipe 271 is formed in a zigzag direction as shown in FIG. 7 . can be The shape of the pipe 271 may be variously modified, for example, it may be configured in a multi-layer parallel structure or a coil shape.

Referring to FIG. 8 , the first supply unit 270 directly connects the pipe 271 through which the fluid flows along the inside, the heat transfer parts 272 and 273 surrounding the pipe 271 , and the pipe 271 . Alternatively, it is configured to include a heat source 274 for converting the liquid-state fluid into a supercritical fluid by indirect heating.

The heat transfer units 272 and 273 include a first heat transfer unit 272 surrounding an upper portion of the pipe 271 , and a second heat transfer unit contacting the first heat transfer unit 272 and enclosing a lower portion of the pipe 271 . (273) can be divided and configured. A first groove 272a having a shape corresponding to that of the upper portion of the pipe 271 is formed in the lower portion of the first heat transfer unit 272 , and the lower portion of the pipe 271 is formed in the upper portion of the second heat transfer unit 273 . A second groove 273a having a corresponding shape may be formed.

The heat transfer units 272 and 273 are provided with a heat source unit 274 that provides a heat source for heating the fluid passing through the pipe 271 . The heat generated from the heat source unit 274 indirectly heats the pipe 271 through the heat transfer units 272 and 273 . The heat transfer units 272 and 273 may function to store heat generated by the heat source unit 271 .

In another embodiment, the configuration of the heat transfer units 272 and 273 is omitted, and the heat source unit 274 is in direct contact with the outer surface of the pipe 271 so that the heat generated by the heat source unit 274 is transferred to the pipe 271 . It can also be configured to be delivered directly to

In addition, a temperature sensor 275 for detecting the temperature of the fluid passing through the pipe 271 and a pressure sensor 276 for detecting the pressure of the fluid passing through the pipe 271 may be provided. Based on the temperature sensed by the temperature sensor 275 and the pressure sensed by the pressure sensor 276 , a control unit (not shown) controls the heating temperature and pressure control unit R1 and the heat source unit 274 in the heat source unit 274 , The supply pressure at R2) can be controlled.

Although the structure of the first supply unit 270 has been described in FIG. 8 , the second supply unit 280 and the third supply unit 290 may also have the same structure as the first supply unit 270 , except that the heat source unit 274 ) is different in that the heating temperature is set differently.

As such, a pipe 271 through which the fluid passes through the first to third supply units 270,280, and 290, and a heat source unit 274 for converting the fluid into a supercritical fluid by heating the pipe 271 directly or indirectly, including By configuring, the heat transfer area between the heat source part 274 and the pipe 271 is enlarged, so that the supercritical fluid supplied to the process chamber 100 can be quickly and stably supplied according to the set temperature, thereby reducing the process time In addition, it is possible to improve the reliability of the substrate processing process.

Inlets of the first supply unit 270 , the second supply unit 280 , and the third supply unit 290 are connected to the high-pressure pump 260 by a supply line L30 . A first supply line L31 is connected to the outlet of the first supply unit 270, and the first supply line L31 is provided with a first valve V31 that opens and closes a pipeline of the first supply line L31. do. A second supply line L32 connected to the first supply line L31 is connected to the outlet of the second supply unit 280, and the second supply line L32 is connected to the second supply line L32. A second valve (V32) for opening and closing is provided. A third supply line L33 connected to the first supply line L31 is connected to the outlet of the third supply unit 290, and the third supply line L33 is connected to the third supply line L33. A third valve (V33) for opening and closing is provided. A fourth supply line L34 is branched from the first supply line L31 and connected to the first inlet 101, and the fourth supply line L34 has a fourth supply line L34 for opening and closing the pipeline. A first pressure adjusting unit R1 for adjusting the pressure of the supercritical fluid supplied to the fourth valve V34 and the first inlet 101 is provided. A fifth supply line L35 connected to the second inlet 102 is connected to the connecting portion of the third supply line L33 and the first supply line L31, and a fifth supply line L35 is connected to the fifth supply line L35. A fifth valve (V35) for opening and closing the conduit of the supply line (L35), and a second pressure adjusting unit (R2) for adjusting the pressure of the supercritical fluid supplied to the second inlet (102) are provided.

As in the second embodiment described above, the first supply unit 270 , the second supply unit 280 , and the third supply unit 290 selectively supply supercritical fluids having different temperatures into the process chamber 100 . When the supercritical fluid is supplied by the first supply unit 270 , the first valve V31, the fourth valve V34, and the fifth valve V35 are opened, and the second valve V32 and the third valve are opened. (V33) becomes a closed state. When the supercritical fluid is supplied by the second supply unit 280 , the second valve V32, the fourth valve V34, and the fifth valve V35 are opened, and the first valve V31 and the third valve are opened. (V33) becomes a closed state. When the supercritical fluid is supplied by the third supply unit 290, the third valve V33, the fourth valve V34, and the fifth valve V35 are opened, and the first valve V31 and the second valve are opened. (V32) is closed.

In the substrate processing apparatus 1-3; 1 of the present embodiment, supercritical fluid of different temperature is supplied to the process chamber 100 by the first supply unit 270 , the second supply unit 280 , and the third supply unit 290 . is supplied and a substrate processing process is performed, which performs the substrate processing process in the same manner as described with reference to FIGS. 4 to 6 .

As described above, the present invention is not limited to the above-described embodiments, and obvious modifications can be made by those of ordinary skill in the art to which the present invention pertains without departing from the technical spirit of the present invention as claimed in the claims. It is possible, and such modifications fall within the scope of the present invention.

1,1-1,1-2,1-3: substrate processing apparatus 100: process chamber
101: first inlet 102: second inlet
103: discharge port 104: discharge line
110: housing 120: stage
200,200-1,200-2,200-3: supercritical fluid supply unit 210: first supply unit
220: second supply unit 230: first supply unit
240: second supply unit 250: third supply unit
260: high pressure pump 270: first supply unit
271: pipe 272: first heat transfer unit
273: second heat transfer unit 274: heat source unit
275: temperature sensor 276: pressure sensor
280: second supply unit 290: third supply unit
W: substrate

Claims (19)

a process chamber in which a substrate coated with a chemical solution is loaded and a substrate processing process is performed using a supercritical fluid;
A supply unit for supplying supercritical fluids having different temperatures to the process chamber,
The supply unit,
a first supply unit for supplying the supercritical fluid to the process chamber at a first set temperature; and
A second supply unit for supplying the supercritical fluid to the process chamber at a second set temperature,
In the initial stage when the supercritical fluid is supplied into the process chamber, the supercritical fluid of a first set temperature is supplied to the first supply unit,
When the pressure inside the process chamber reaches the process pressure, the supercritical fluid of a second preset temperature is supplied into the process chamber by the second supply unit. delete According to claim 1,
The plurality of supply units selectively supply supercritical fluids having different temperatures to the process chamber. delete delete According to claim 1,
The first preset temperature is set to a temperature lower than the process temperature of the process chamber, and the second preset temperature is set to the process temperature. According to claim 1,
The supercritical fluid is supercritical carbon dioxide,
The first set temperature is 50 ℃ ~ 70 ℃,
The second set temperature is a substrate processing apparatus, characterized in that 70 ~ 200 ℃. According to claim 1,
The supply unit,
Further comprising a third supply unit for supplying the supercritical fluid to a third set temperature,
The second set temperature is higher than the first set temperature,
The third set temperature is higher than the second set temperature, the substrate processing apparatus.. a process chamber in which a substrate coated with a chemical solution is loaded and a substrate processing process is performed using a supercritical fluid;
A supply unit for supplying supercritical fluids having different temperatures to the process chamber,
The supply unit,
a first supply unit for supplying the supercritical fluid to the process chamber at a first set temperature;
a second supply unit supplying the supercritical fluid to the process chamber at a second set temperature; and
A third supply unit for supplying the supercritical fluid to the process chamber at a third set temperature,
In the initial stage when the supercritical fluid is supplied into the process chamber, the supercritical fluid of a first set temperature is supplied by the first supply unit,
When the pressure inside the process chamber reaches the process pressure as the supercritical fluid is supplied by the first supply part, the supercritical fluid of a second set temperature is supplied by the second supply part,
When the substrate processing process using the supercritical fluid of the second set temperature is completed, the fluid remaining in the process chamber is discharged after supplying the supercritical fluid of the third set temperature for a predetermined time by the third supply unit A substrate processing apparatus, characterized in that. a process chamber in which a substrate coated with a chemical solution is loaded and a substrate processing process is performed using a supercritical fluid;
A supply unit for supplying supercritical fluids having different temperatures to the process chamber,
The supply unit,
a first supply unit for supplying the supercritical fluid to the process chamber at a first set temperature;
a second supply unit supplying the supercritical fluid to the process chamber at a second set temperature; and
A third supply unit for supplying the supercritical fluid to the process chamber at a third set temperature,
In the initial stage when the supercritical fluid is supplied into the process chamber, the supercritical fluid of a first set temperature is supplied by the first supply unit,
When the pressure inside the process chamber reaches the process pressure as the supercritical fluid is supplied by the first supply unit, the supercritical fluid having a second set temperature is supplied for a time set by the second supply unit, and then the first The supercritical fluid of the first set temperature is supplied for the time set by the supply unit,
When the substrate processing process using the supercritical fluid of the first preset temperature is completed, the fluid remaining in the process chamber is discharged after supplying the supercritical fluid of the third preset temperature. 9. The method of claim 8,
The supercritical fluid is supercritical carbon dioxide,
The first set temperature is 50 ℃ ~ 70 ℃,
The second set temperature is 70 ℃ ~ 100 ℃,
The third set temperature is a substrate processing apparatus, characterized in that 100 ℃ ~ 200 ℃. According to claim 1,
The supply line through which the supercritical fluid is supplied to the process chamber, the substrate processing apparatus, characterized in that the substrate processing apparatus, characterized in that provided with a pressure adjusting unit for forming a variable pressure in the process chamber when the substrate processing process is performed in the process chamber. According to claim 1,
The substrate processing apparatus according to claim 1, wherein a discharge valve for forming a variable pressure in the process chamber when the substrate processing process is performed in the process chamber is provided in the discharge line through which the fluid remaining in the process chamber is discharged. According to claim 1,
The supply unit,
a pipe through which the liquid fluid passes;
a heat source for converting the liquid-state fluid into a supercritical fluid having a set temperature by directly or indirectly heating the pipe;
A substrate processing apparatus comprising a. 15. The method of claim 14,
Further comprising a heat transfer unit surrounding the pipe,
The heat source unit indirectly heats the pipe through the heat transfer unit. A first step of loading the substrate coated with the chemical into the process chamber;
a second step of supplying a supercritical fluid having a first set temperature into the process chamber; and
When the pressure inside the process chamber reaches the process pressure as the supercritical fluid of the first preset temperature is supplied, a third set of supercritical fluid of a second preset temperature higher than the first preset temperature is supplied into the process chamber step;
A substrate processing method comprising a. 17. The method of claim 16,
When the substrate processing by the third step is completed, a fourth step of supplying a supercritical fluid having a third set temperature higher than the second set temperature into the process chamber and then discharging the fluid remaining in the process chamber is further performed. A substrate processing method comprising a. 17. The method of claim 16,
The third step may further include generating a fluctuating pressure inside the process chamber. A first step of loading the substrate coated with the chemical into the process chamber;
a second step of supplying a supercritical fluid having a first set temperature into the process chamber;
When the pressure inside the process chamber reaches the process pressure as the supercritical fluid of the first preset temperature is supplied, a third set of supercritical fluid of a second preset temperature higher than the first preset temperature is supplied into the process chamber step;
a fourth step of supplying the supercritical fluid of the first set temperature into the process chamber; and
a fifth step of supplying a supercritical fluid having a third preset temperature higher than the second preset temperature into the process chamber and then discharging the fluid remaining in the process chamber;
A substrate processing method comprising a.

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