KR102402577B1 - Light emitting device package - Google Patents

Abstract

The light emitting device package disclosed in the embodiment includes: a circuit board having first and second electrode parts separated from each other, and a plurality of pads between the first and second electrode parts; and a plurality of first light emitting devices and a plurality of second light emitting devices disposed on the plurality of pads, wherein the plurality of pads of the circuit board include: a first pad connected to the first electrode part; a second pad connected to the second electrode unit; and a connection pad disposed between the first and second pads and having third and fourth pads connected to each other; including, wherein the first and second light emitting devices include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer a light emitting structure, a first electrode electrically connected to the first conductivity type semiconductor layer, and a second electrode electrically connected to the second conductivity type semiconductor layer; The second electrode of the first light emitting device is disposed to face and electrically connected, and the second pad and the third pad are disposed to face and electrically connected to the first electrode of the second light emitting device, and the first light emitting device The first electrode of the device and the second electrode of the second light emitting device may be connected with a wire.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

The present invention relates to a light emitting device package having a plurality of light emitting devices.

The present invention relates to a lighting module having a plurality of light emitting elements.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a p-n junction diode having a characteristic in which electric energy is converted into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that emits light distributed in a wavelength range of 200 nm to 400 nm. can be used

Ultraviolet rays can be divided into UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm) in the order of the longest wavelength. The UV-A (315nm~400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

The embodiment provides a light emitting device package or a lighting module having different types of vertical light emitting devices.

The embodiment provides a light emitting device package or lighting module in which a first light emitting device having a first electrode disposed thereon and a second light emitting device having a second electrode disposed thereon are connected with a line portion or a wire so that they can be cross-arranged. to provide.

The embodiment provides a light emitting device package or a lighting module in which a plurality of light emitting devices separated from each other are alternately arranged with a line portion and a wire so that they can be connected in series.

The embodiment provides a light emitting device package or a lighting module capable of connecting the light emitting devices with a wire, reducing the lighting space and improving the luminous flux.

The embodiment provides a light emitting device package or a lighting module in which light reflectivity of a peripheral area in which a light emitting device is disposed is improved.

The embodiment may improve the reliability of a package or a lighting module having different types of light emitting devices.

A light emitting device package according to an embodiment includes: a circuit board having first and second electrode portions separated from each other, and a plurality of pads between the first and second electrode portions; and a plurality of first light emitting devices and a plurality of second light emitting devices disposed on the plurality of pads, wherein the plurality of pads of the circuit board include: a first pad connected to the first electrode part; a second pad connected to the second electrode unit; and a connection pad disposed between the first and second pads and having third and fourth pads connected to each other; including, wherein the first and second light emitting devices include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer a light emitting structure, a first electrode electrically connected to the first conductivity type semiconductor layer, and a second electrode electrically connected to the second conductivity type semiconductor layer, wherein the first pad and the fourth pad include the first electrode The second electrode of the light emitting device is disposed to face and electrically connected, and the second pad and the third pad are disposed to face and electrically connected to the first electrode of the second light emitting device, and the first light emitting device The first electrode of the and the second electrode of the second light emitting device may be connected with a wire.

A light emitting device package according to an embodiment includes a circuit board; first and second electrodes disposed on the circuit board and spaced apart from each other; a plurality of pad patterns disposed between the first and second electrode parts and spaced apart from each other; a plurality of first light emitting devices disposed on the circuit board; a plurality of second light emitting devices disposed on the circuit board; and a wire disposed between the plurality of pad patterns spaced apart from each other. including, wherein the pad pattern includes a first pad, a second pad, and a connection pad disposed between the first pad and the second pad, wherein the first light emitting device is disposed on the first pad, The second light emitting device may be disposed on the second pad, and the wire may be disposed between the first light emitting device and the second light emitting device.

According to an embodiment, a plurality of connection pads are disposed between the first and second pads, and the circuit board includes a first line portion connecting the first electrode portion and the first pad, the second electrode portion, and It may include a second line portion connecting the second pad, and a third line portion connecting the third and fourth pads of each of the connection pads.

In example embodiments, the first to third line portions may have a width and a length smaller than the widths of the first pad, the second pad, and the connection pad.

In an embodiment, the light emitting unit may have the first light emitting element and the second light emitting element alternately arranged and connected in series with each other.

In an embodiment, the first electrode disposed on the first light emitting device may be connected to the second electrode disposed on the second light emitting device by a wire.

According to an embodiment, according to an embodiment, the first light emitting element and the second light emitting element are arranged in the same number, and the number of the wires is 1/2 of the sum of the number of the first and second light emitting elements of the light emitting part , the number of the third line parts may be smaller than the number of the wires.

In an embodiment, the first electrode part and the second electrode part may have a hemispherical shape, and a molding member and a reflective member may be disposed on the light emitting part and around the molding member.

According to an embodiment, a plurality of light emitting units of the first and second light emitting devices connected in series to the first and second electrode units may be disposed.

The embodiment may reduce the size compared to a module having the same number of light emitting devices.

The embodiment may increase the density or the number of arrangement of light emitting devices within the same size of the light emitting device package or lighting module.

In an embodiment, the luminous flux of a light emitting device package or a lighting module may be improved.

The embodiment may improve light reflectance by preventing patterns other than the patterns on which the light emitting devices are disposed in the light emitting area of the light emitting device package or the lighting module from being exposed.

In the embodiment, the reliability of a light emitting device package or a lighting module and a lighting system having the same may be improved.

1 is a perspective view of a light emitting device package according to an embodiment.
FIG. 2 is a diagram illustrating an example in which adjacent light emitting devices are connected in FIG. 1 .
FIG. 3 is a cross-sectional view on the AA side of the light emitting device package of FIG. 1 .
FIG. 4 is a view for explaining the polarity of an electrode in the light emitting device package of FIG. 3 .
5 is a plan view illustrating a wiring pattern of a circuit board in the light emitting device package of FIG. 1 .
FIG. 6 is a partially enlarged view for explaining a wiring pattern of a circuit board in the light emitting device package of FIG. 5 .
7 is a plan view illustrating a protective layer in the light emitting device package of FIG. 1 .
FIG. 8 is a plan view in which the protective layer of FIG. 7 is combined on the wiring pattern of FIG. 6 .
8 is a side cross-sectional view illustrating a first light emitting device in the light emitting device package of FIG. 1 .
9 is a side cross-sectional view illustrating a second light emitting device in the light emitting device package of FIG. 1 .

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of embodiments, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

Hereinafter, a light emitting device package or a lighting module according to an embodiment of the present invention will be described with reference to FIGS. 1 to 8 . Hereinafter, for convenience of description, a light emitting device package in which a plurality of light emitting devices are packaged will be described, and may be described as a lighting module.

1 is a perspective view of a light emitting device package according to an embodiment, FIG. 2 is a view showing an example in which adjacent light emitting devices are connected in FIG. 1 , FIG. 3 is a cross-sectional view on the A-A side of the light emitting device package of FIG. 1 , FIG. 4 is FIG. 3 is a view for explaining the polarity of electrodes in the light emitting device package of FIG. 5 , FIG. 5 is a plan view showing a wiring pattern of a circuit board in the light emitting device package of FIG. 1 , and FIG. 6 is a wiring of the circuit board in the light emitting device package of FIG. 5 It is a partial enlarged view for explaining the pattern, FIG. 7 is a plan view for explaining the protective layer in the light emitting device package of FIG. 1, and FIG. 8 is a plan view in which the protective layer of FIG. 7 is combined on the wiring pattern of FIG. .

1 to 8 , the light emitting device package 100 may include a circuit board 110 , and light emitting units 130 and 130A may be disposed on the circuit board 110 . One or a plurality of the light emitting units 130 and 130A may be disposed on the circuit board 110 . The light emitting units 130 and 130A may include a plurality of first light emitting devices 131 and a plurality of second light emitting devices 132 .

The first and second light emitting devices 131 and 132 may be arranged on the circuit board 110 . The circuit board 110 includes a base layer 101, an insulating layer 103 on the base layer 101, and a wiring layer 107 on the insulating layer 103, as shown in FIGS. 1, 3 and 4 . And a protective layer 105 may be formed on the wiring layer 107 . The base layer 101 may be formed of a metal or non-metal material. When the base layer 101 is a metal, it may include at least one of Al, Cu, and Fe, or an alloy having at least one of these two. When the wiring layer 107 is made of a non-metal material, it includes an insulating material, for example, a ceramic material. The ceramic material includes a co-fired low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). The material of the base layer 101 may be, for example, AlN. The base layer 101 may be disposed as a lower layer of the circuit board 110 to perform a heat dissipation function. In FIG. 1 , the protective layer 105 on the circuit board 110 may cover some patterns of the wiring layer 107 , for example, the patterns of the line portion so as not to be exposed.

The insulating layer 103 is disposed on the base layer 101 , and includes preimpregnated materials, and may include an epoxy resin, a phenol resin, an unsaturated polyester resin, and the like.

A wiring layer 107 is formed on the insulating layer 103 , and the wiring layer 107 includes a wiring pattern and includes at least one of Cu, Au, Al, and Ag, for example, Cu may be used. The protective layer 105 may be formed on the wiring layer 107 . The protective layer 105 includes a solder resist, and protects the upper surface of the circuit board 110 , other than the bonding pad or various exposed patterns. The protective layer 105 may be provided to be thicker than that of the wiring layer 107 , or may cover an unexposed region of the wiring layer 107 . For example, the wiring layer 107 may cover the line portions P10 , P11 , and P20 illustrated in FIGS. 3 , 5 and 6 . The line portions P10 , P11 , and P20 may be line patterns extending from or connected to each pad.

One or a plurality of via holes may be formed inside or on the side surface of the circuit board 110 , and the via holes may be used as a path for supplying power. When the via hole is disposed in the circuit board 110 , a pad for external connection may be disposed on the bottom of the circuit board 110 .

Light emitting devices 131 and 132 may be mounted on the wiring layer 107 of the circuit board 110 , and the light emitting devices 131 and 132 may be disposed in series by a wiring pattern of the wiring layer 107 . When the two light emitting units 130 and 130A are disposed on the circuit board 110, the light emitting devices 131 and 132 of each light emitting unit 130 and 130A are connected in series, and may be connected in parallel with the light emitting devices of different light emitting units. have.

In each of the light emitting units 130 and 130A, the first light emitting device 131 is connected to the second light emitting device 132 , and the second light emitting device 132 is connected to the first light emitting device 131 , in series with each other. can be connected 2 , in the first light emitting device 131 (C11), a first electrode 152 may be disposed on an upper portion and a second electrode may be disposed on a lower portion of the first light emitting device 131 (C11), and the second light emitting device 132 (C21) may have an upper portion The second electrode 150 may be disposed on the , and the first electrode may be disposed on the lower portion. The second electrode disposed under the first light emitting device 131 ( C11 ) may face the fourth pad P2 and may be electrically connected, and disposed under the second light emitting device 132 : C21 . The first electrode may be disposed to face the third pad P1 and may be electrically connected to each other. A pad pattern in which the third pad P1 and the fourth pad P2 are connected may be defined as a connection pad.

The first light emitting device 131 includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, the first electrode is connected to the first conductive semiconductor layer, the second electrode is a second It may be connected to the conductive type semiconductor layer. The second light emitting device 132 includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, the first electrode is connected to the first conductive semiconductor layer, the second electrode is a second It may be connected to the conductive type semiconductor layer. Accordingly, in the first light emitting device 131 and the second light emitting device 132 , the positions of the first electrode and the second electrode may be disposed on opposite sides of each other. The first conductivity type semiconductor layer may be an n-type semiconductor layer, and the second conductivity type semiconductor layer may be a p-type semiconductor layer, or vice versa. The first and second light emitting devices 131 and 132 may be vertical LED chips in which first and second electrodes are disposed on opposite sides of each other. The number of the first and second light emitting devices 131 and 132 in each of the light emitting units 130 and 130A may be the same.

As another example, the first light emitting device 131 may have a second electrode disposed on an upper portion and a first electrode disposed on a lower portion thereof, and the second light emitting device 132 may have a first electrode on an upper portion and a second electrode on a lower portion of the first light emitting device 131 . This can be arranged.

5 and 6 , looking at the wiring pattern of the wiring layer 107 , the first and second terminal portions 113A and 115A, the first electrode portion 113 connected to the first terminal portion 113A, and the first The second electrode unit 115 connected to the second terminal unit 115A may include a pad or a pad pattern between the first and second electrode units 113 and 115 .

The pads or pad patterns include a first pad Pa connected to the first electrode unit 113 , a second pad Pb connected to the second electrode unit 115 , the first pad Pa and the second pad pattern. It may include third and fourth pads P1 and P2 of one or a plurality of connection pads spaced apart from the second pad Pb and connected to each other between the first pad Pa and the second pad Pb. . The connection pads having the third and fourth pads P1 and P2 may be disposed between one or a plurality of first and second pads Pa and Pb, and the first and second light emitting devices 131 and 132 may be disposed thereon. At least one may be disposed.

The first electrode part 113 and the second electrode part 115 may be disposed on the outer periphery of the light emitting part 130 and 130A. The first electrode part 113 may be formed in a hemispherical shape or an arc shape on one side of the light emitting parts 130 and 130A, and the second electrode part 115 has a hemispherical shape on the other side of the light emitting parts 130 and 130A. It may be formed in a shape or an arc shape. The outer shape of the first and second electrode parts 113 and 115 may be formed in a circular shape or a ring shape. An electrode separator may be disposed between the first and second electrode parts 113 and 115 , but the present invention is not limited thereto.

A plurality of holes 114 may be disposed in the first and second electrode parts 113 and 115 to strengthen coupling with the reflective member 140 or the protective layer 105 .

Light emitting devices 131 and 132 may be respectively disposed on each pad of the connection pattern. 1, 5 and 6 , for example, a first light emitting device 131 may be disposed on the first pad Pa, and a second light emitting device 132 may be disposed on the second pad Pb. may be disposed, any one of the first or second light emitting device 132 is disposed on any one of the third and fourth pads P1 and P2, and the third and fourth pads P1 and P2 Another light emitting device may be disposed in the other one of them. For example, the second light emitting device 132 may be disposed on the third pad P1 of the connection pad, and the first light emitting device 131 may be disposed on the fourth pad P2 .

5, 6 and 8 , the first pad Pa is connected to the first electrode part 113 and the first line part P10, and the second pad Pb is connected to the second The electrode unit 115 and the second line unit P20 may be connected to each other, and the third and fourth pads P1 and P2 may be connected to each other through a third line unit P11. The length D2 of the first to third line portions P10, P20, and P11 may be 250 micrometers or less, for example, 150 to 250 micrometers. When the length D2 of the first to third line portions P10, P20, and P11 is out of the above range, the module size may be increased. can occur. A length D2 of the first to third line portions P10 , P20 , and P11 may be shorter than a length of a wire connecting two adjacent light emitting devices.

Here, the distance D1 between the two connection patterns that are not connected to each other may be, for example, 300 micrometers or less, for example, in the range of 250 to 300 micrometers. The gap D1 is a gap between the third and fourth pads P1 and P2 of the connection pad, a gap between the first pad Pa and the third pad P1, and the second pad Pb and the fourth pad P1. It may be a gap between the pads P2. The distance D1 may be disposed at a distance capable of preventing electrical interference between adjacent patterns, and may vary according to the driving voltage.

The first to third line portions P10, P20, and P11 are smaller than widths of the first pad Pa, the second pad Pb, and the third and fourth pads P1 and P2 of the connection pad. It can have a width and a length. The first to third line portions P10, P20, and P11 may have the same thickness or thinner thickness as the first and second pads P10 and P20 and the third and fourth pads P1 and P2 of the connection pad. have. When the first to third line portions P10, P20, and P11 have a thinner thickness, a protective layer is formed to increase the light reflection area.

The number of the first pad Pa and the second pad Pb may be the same as the number of the light emitting units 130 and 130A. The group of connection pads having the third and fourth pads P1 and P2 may be one or more, for example, one or two or more. The number of groups of connection pads having the third and fourth pads P1 and P2 may vary according to a driving voltage.

As shown in FIG. 1 , the input-side first device C10 among the first light emitting devices 131 may be disposed on the first pad Pa. Among the first light emitting elements 131 , the second elements C11 disposed inside may be respectively disposed on the fourth pad P2 . Among the second light emitting devices 132 , the output-side third device C20 is disposed on the second pad Pb, and the inner fourth devices C21 are disposed on the third pad P1 . can

2 to 4 , the second devices C11 of the first light emitting device 131 disposed on the fourth pad P2 may be electrically connected to the fourth pad P2 by bonding with a conductive adhesive. , the first electrode may be disposed on the upper portion. The fourth devices C21 of the second light emitting device 132 disposed on the third pad P1 may be electrically connected to the third pad P1 by bonding with a conductive adhesive, and the second electrode 150 is disposed on the third pad P1. ) can be placed. The third and fourth devices C11 and C21 of the first and second light emitting devices 131 and 132 disposed on the third and fourth pads P1 and P2 may be connected by a third line part P11. have.

3 and 4 , in the second device C11 of the first light emitting device 131 , a second electrode 152 may be disposed on a lower portion and a first electrode 152 on an upper portion of the first light emitting device 131 , and a second light emitting device 132 . ) of the fourth device C21 may have a first electrode at a lower portion and a second electrode 150 at an upper portion.

The second device C11 and the fourth device C21 may be respectively bonded to the fourth and third pads P2 and P1 using a conductive adhesive, and the conductive adhesive may be formed using a conductive paste. . The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy. For example, the conductive paste may include a Sn-Ag-Cu (SAC) material. Accordingly, when the second device C11 disposed on the fourth pad P2 is connected in the direction of the fourth device C21, the first electrode 152 disposed on the second device C11 is The first electrode 152 of the second device C11 disposed on the fourth pad P2 of the fourth device C21 includes the second electrode 150 and the wire 135 of the fourth device C21. can be connected in series. When the fourth device C21 disposed on the third pad P1 is connected in the direction of the second device C11, the lower electrode of the fourth device C21 is connected to the second device by the third line part P11. It may be connected to the lower electrode of the device C11.

The number of wires in each of the light emitting units 130 and 130A may be 1/2 of the sum of the number of the light emitting devices 131 and 132 . In this case, the first and second line portions P10 and P20 may be respectively disposed in the same number in each of the light emitting units 130 and 130A. The number of the third line portions P11 may be smaller than the number of the wires 135 , and for example, may be smaller than the number of the wires 135 by one. That is, the number of wires 135 in each light emitting part may be greater than that of the third line part P11 by one.

1, the wire 135 and the third line portion P11 alternately connect the light emitting devices 131 and 132 to each other, so that the wire 135 is directly connected to a bonding pad that is a part of the wiring pattern. It can shorten the process. In addition, when the wire is connected to the bonding pad, since the bonding pad is exposed, respectively, the space of the light emitting device package can be increased. In addition, by exposing the bonding pad to which the wire is bonded, the luminous flux may be lowered by the Au layer plated on the surface of the bonding pad. The embodiment reduces the gap between the light emitting elements and connects the connection method with the wire 135 or the line portions P10, P20, and P11, thereby reducing the light emitting surface due to deletion on the bonding pad and increasing the luminous flux. .

7 is an example of the protective layer 105 of FIG. 1 , in which an area corresponding to the wiring pattern of FIG. 5 is open, for example, open areas OP1 and OP3 corresponding to each terminal part, and an open area corresponding to each electrode part. Open regions 113B and 115B and an open region OP2 corresponding to the electrode separator may be respectively disposed. Open areas TH1 corresponding to the first pad, the second pad, and the third and fourth pads of the connection pad may be disposed inside the open areas 113B and 115B corresponding to the respective electrode units. In an embodiment, the line portion may be covered with the protective layer 105 , thereby preventing exposure of a pattern on which a light emitting device is not mounted. Accordingly, light extraction efficiency and luminous flux can be improved. The open regions may be regions penetrating from the upper surface to the lower surface of the passivation layer.

In FIG. 8 , each part of the wiring pattern covered by the protective layer 105 of FIG. 7 may be exposed.

Referring to FIG. 8 together with FIG. 5 , a first pad Pa is connected to the first electrode part 113 by a first line part P10 , and the first pad Pa is a third pad P1 . ), and the third pad P1 of the connection pad may be connected to the fourth pad P2 and the third line unit P11. One or more groups of the third and fourth pads P1 and P2 of the connection pad may be arranged. The last fourth pad P2 may be spaced apart from the second pad Pb, and the second pad Pb may be connected to the second electrode unit 115 by the second line unit P20.

1, 3, and 4 , a molding member 142 may be disposed on the circuit board 110 and a reflective member 140 may be disposed around the molding member 142 . The reflective member 140 may be disposed around the light emitting parts 130 and 130A and around the molding member 142 .

The reflective member 140 reflects the light emitted to the outside from the light emitting devices 131 and 132 . The reflective member 140 has a ring shape, is formed to have a thickness greater than that of the protective layer 105 , and can effectively reflect incident light. The reflective member 140 may be disposed on the first and second electrode parts 113 and 115 and cover the outside of the molding member 142 .

The reflective member 140 includes a resin material such as silicone or epoxy, and a metal oxide may be added therein. The metal oxide is a material having a higher refractive index than that of the molding member, and includes, for example, TIO ₂ , Al ₂ O ₃ , or SiO ₂ . The metal oxide may be added in an amount of 5 wt% or more in the half-water member, and exhibit a reflectance of 50% or more, for example, 78% or more with respect to the light emitted from the light emitting devices 131 and 132 . The reflective member 140 may have a height of 600±20 μm and a width of 1000±100 μm. When the height of the reflective member 140 is too low or too high, light reflection efficiency may be reduced. In addition, when the width of the reflective member 140 is too narrow, it is difficult to form, and when it is too wide, heat dissipation efficiency may be reduced.

The molding member 142 may be formed of a transparent resin material such as silicone or epoxy. The molding member 142 may have a circular top view shape, and a cross-sectional shape may be a polygonal shape or a hemispherical shape, but is not limited thereto. An optical lens may be disposed on the molding member 142 , but the present invention is not limited thereto.

The molding member 142 may be disposed higher than the height of the high point of the wire 135 . The molding member 142 may be formed in a range of 180 μm to 200 μm from the upper surfaces of the light emitting devices 131 and 132 .

A phosphor may be added to the molding member 142 , and the phosphor may include at least one of a yellow phosphor, a green phosphor, a blue phosphor, and a red phosphor, for example, a lanthanoid-based phosphor such as Eu or Ce. Nitride-based phosphors, oxynitride-based phosphors, and cyron-based phosphors mainly activated by elements, alkaline earth halogen apatite phosphors mainly activated by elements such as lanthanoids such as Eu, and transition metals such as Mn, alkaline earth metal halide borate a phosphor, an alkaline earth metal aluminate phosphor, an alkaline earth silicate, an alkaline earth sulfide, an alkaline earth thiogallate, an alkaline earth silicon nitride, a germanate, or a rare earth aluminate mainly activated by a lanthanoid-based element such as Ce; It may be at least one selected from organic and organic complexes mainly activated by a lanthanoid-based element such as rare earth silicate or Eu. As a specific example, although the above-mentioned phosphor can be used, it is not limited to this.

An outer contour of the mold member 142 may have a circular shape and may be in contact with the reflective member 140 . The mold member 142 and the reflective member 140 may be formed of different types of silicon materials, and the adhesive force between the two members may be improved. In addition, the reflective member 140 may prevent the molding member 142 from overflowing. A protection device for protecting the light emitting devices may be disposed on the circuit board 110 , but the present invention is not limited thereto.

Since the light emitting device package according to the embodiment does not separately provide a bonding pad for wire connection between the light emitting device and the light emitting device, the width or diameter of the light emitting surface may be provided to be 10 mm or less based on 20W. That is, the size of the light emitting device package can be reduced. In addition, since the wire bonding pad is removed, the optical performance according to the improvement of the reflectance may be improved.

9 is an example of the first light emitting device of the light emitting device package of the embodiment.

Referring to FIG. 9 , in the first light emitting device, a first electrode 91 electrically connected to the first conductive semiconductor layer 11 is disposed on an upper portion and electrically connected to a second conductive semiconductor layer 13 on a lower portion of the first light emitting device. A structure in which the second electrode 90 is disposed may be provided.

The first light emitting device includes a first electrode 91 , a light emitting structure 10 , and a second electrode 90 having a plurality of conductive layers 96 , 97 , 98 and 99 under the light emitting structure 10 . includes The configuration of the light emitting structure 10 will be referred to with reference to FIG. 9 . The first electrode 91 is disposed on the light emitting structure 10 and may have the same electrode as the branch pattern or the female pattern 91A.

The light emitting structure 10 includes a first conductivity type semiconductor layer 11 , a second conductivity type semiconductor layer 13 , and between the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 . The active layer 12 may be included. The first conductivity-type semiconductor layer 11 may be a semiconductor having an n-type dopant, and the second conductivity-type semiconductor layer 13 may be a semiconductor having a p-type dopant. The light emitting structure 10 is selectively formed from compound semiconductors of Groups II to V elements and Group III to V elements, and may emit light with a predetermined peak wavelength within a wavelength range from an ultraviolet band to a visible light band. The first and second conductivity-type semiconductor layers 11 and 13 are semiconductor layers using, for example, a compound semiconductor of a group III-V element, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP. , GaAs, GaAsP, AlGaInP, may include at least one of GaP. The active layer 12 includes a well layer/barrier layer, and the period of the well layer/barrier layer is, for example, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaA. , including at least one of a pair of InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. The light emitting structure 10 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The second electrode 90 is disposed under the second conductive semiconductor layer 75 , and includes a contact layer 96 , a reflective layer 97 , a bonding layer 98 , and a conductive support member 99 . The second electrode 90 may be electrically connected to the second conductive semiconductor layer 75 .

The contact layer 96 is in contact with a semiconductor layer, for example, the second conductive semiconductor layer 75 . The contact layer 96 may be formed of a low-conductivity material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, or a metal of Ni or Ag. A reflective layer 97 is disposed under the contact layer 96, and the reflective layer 97 is composed of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and combinations thereof. It may be formed into a structure comprising at least one layer made of a material selected from the group. The reflective layer 97 may be in contact under the second conductivity type semiconductor layer 75 , but is not limited thereto. A bonding layer 98 is disposed under the reflective layer 97, and the bonding layer 98 may be used as a barrier metal or a bonding metal, and the material is, for example, Ti, Au, Sn, Ni, Cr, at least one of Ga, In, Bi, Cu, Ag and Ta and an optional alloy.

A lower protective layer 83 and a current blocking layer 85 are disposed between the second conductive semiconductor layer 75 and the second electrode 90 . The lower protective layer 83 is formed along the lower edge of the second conductive semiconductor layer 75 and may be formed in a ring shape, a loop shape, or a frame shape. The lower protective layer 83 includes a transparent conductive material or an insulating material, for example, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may include at least one. An inner portion of the lower protective layer 83 is disposed under the second conductive semiconductor layer 75 , and an outer portion of the lower protective layer 83 is disposed outside the side surface of the light emitting structure. The current blocking layer 85 may be disposed between the second conductive semiconductor layer 75 and the contact layer 96 or the reflective layer 97 . The current blocking layer 85 includes an insulating material, for example, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO ₂ It may include at least one of As another example, the current blocking layer 85 may be formed of a metal for a Schottky contact.

The current blocking layer 85 is disposed to correspond to the first electrode 91 disposed on the light emitting structure in a thickness direction of the light emitting structure. The current blocking layer 85 may block the current supplied from the second electrode and spread it to another path. One or a plurality of the current blocking layers 85 may be disposed, and at least a portion or an entire region of the first electrode 91 may overlap in a vertical direction.

A support member 99 is formed under the bonding layer 98 , and the support member 99 may be formed of a conductive member, and the material is copper (Cu-copper), gold (Au-gold), or nickel. It may be formed of a conductive material such as (Ni-nickel), molybdenum (Mo), copper-tungsten (Cu-W), or a carrier wafer (eg, Si, Ge, GaAs, ZnO, SiC, etc.). As another example, the conductive support member 99 may be implemented as a conductive sheet.

A light extraction structure (not shown) such as roughness may be formed on the upper surface of the first conductive semiconductor layer 41 . An insulating layer 87 may be disposed on the surface of the semiconductor layer, but is not limited thereto. Accordingly, a light emitting chip having a vertical electrode structure having the first electrode 91 on the light emitting structure 10 and the supporting member 99 below may be manufactured.

10 is an example of a second light emitting device of the light emitting device package of the embodiment.

Referring to FIG. 10 , in the first light emitting device, the second electrode 25 electrically connected to the second conductive semiconductor layer 13 is disposed on the upper portion, and the second electrode 25 is electrically connected to the first conductive semiconductor layer 11 in the lower portion of the first light emitting device. A structure in which the first electrode (hereinafter, referred to as the second electrode layer 50 or the lower electrode layer for convenience of description) is disposed may be provided.

The first light emitting device includes a light emitting structure 10 having a plurality of semiconductor layers 11 , 12 , 13 , a first electrode layer 20 under the light emitting structure 10 , and a first electrode layer 20 under the light emitting structure 10 . A second electrode layer 50 , an insulating layer 41 between the first and second electrode layers 20 and 50 , and a second electrode 25 may be included.

The light emitting structure 10 includes a first conductivity type semiconductor layer 11 , a second conductivity type semiconductor layer 13 , and between the first conductivity type semiconductor layer 11 and the second conductivity type semiconductor layer 13 . The active layer 12 may be included. A light extraction structure 11A for light extraction may be formed on the first conductive semiconductor layer 11 . The first conductivity-type semiconductor layer 11 may be a semiconductor having an n-type dopant, and the second conductivity-type semiconductor layer 13 may be a semiconductor having a p-type dopant. The light emitting structure 10 is selectively formed from compound semiconductors of Groups II to V elements and Group III to V elements, and may emit light with a predetermined peak wavelength within a wavelength range from an ultraviolet band to a visible light band. The first and second conductivity-type semiconductor layers 11 and 13 are semiconductor layers using, for example, a compound semiconductor of a group III-V element, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP. , GaAs, GaAsP, AlGaInP, may include at least one of GaP. The active layer 12 includes a well layer/barrier layer, and the period of the well layer/barrier layer is, for example, InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaA. , including at least one of a pair of InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, and InP/GaAs. The light emitting structure 10 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

The first electrode layer 20 is disposed between the light emitting structure 10 and the second electrode layer 50, is electrically connected to the second conductivity type semiconductor layer 13 of the light emitting structure 10, and It is electrically insulated from the second electrode layer 50 . The first electrode layer 20 electrically connects the second electrode 25 and the second conductivity-type semiconductor layer 13 .

The first electrode layer 20 includes a first contact layer 15 , a reflective layer 17 and a capping layer 19 , and the first contact layer 15 includes the reflective layer 17 and a second conductivity type semiconductor. It is disposed between the layers 13 , and the reflective layer 17 is disposed between the first contact layer 15 and the capping layer 19 . The first contact layer 15 , the reflective layer 17 , and the capping layer 19 may be formed of different conductive materials, but are not limited thereto.

The first contact layer 15 may be in contact with the second conductivity type semiconductor layer 13 , and for example, an ohmic contact may be formed with the second conductivity type semiconductor layer 13 . The first contact layer 15 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. The first contact layer 15 is, for example, ITO (Indium Tin Oxide), ITON (ITO Nitride), IZO (Indium Zinc Oxide), IZON (IZO Nitride), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide) ), IZTO(Indium Zinc Tin Oxide), IAZO(Indium Aluminum Zinc Oxide), IGZO(Indium Gallium Zinc Oxide), IGTO(Indium Gallium Tin Oxide), ATO(Antimony Tin Oxide), GZO(Gallium Zinc Oxide), GZO(Gallium Zinc Oxide) IZO Nitride), ZnO, IrOx, RuOx, NiO, Pt, Ag, may be formed of at least one of Ti.

The reflective layer 17 may be electrically connected to the first contact layer 15 and the capping layer 19 . The reflective layer 17 may serve to increase the amount of light extracted to the outside by reflecting the light incident from the light emitting structure 10 .

The reflective layer 17 may be formed of a metal having a light reflectance of 70% or more. For example, the reflective layer 17 may be formed of a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer 17 and the metal or alloy and ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-) Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide), etc. It may be formed in multiple layers. For example, in an embodiment, the reflective layer 17 may include at least one of Ag, Al, an Ag-Pd-Cu alloy, or an Ag-Cu alloy. For example, the reflective layer 17 may be formed of an Ag layer and a Ni layer alternately, and may include Ni/Ag/Ni, a Ti layer, or a Pt layer. As another example, the first contact layer 15 may be formed under the reflective layer 17 , and at least a portion may pass through the reflective layer 17 to make contact with the second conductivity-type semiconductor layer 13 . As another example, the reflective layer 17 is disposed under the first contact layer 15 , and a portion passes through the first contact layer 15 to be in contact with the second conductivity type semiconductor layer 13 . can

The light emitting device according to the embodiment may include a capping layer 19 disposed under the reflective layer 17 . The capping layer 19 is in contact with the lower surface of the reflective layer 17 , and the contact part 34 is coupled to the second electrode 25 , and a wiring layer 107 that transmits power supplied from the second electrode 25 . ) to function as The capping layer 19 may be formed of a metal, for example, may include at least one of Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The contact portion 34 of the capping layer 19 is disposed in a region that does not vertically overlap the light emitting structure 10 and vertically overlaps the second electrode 25 . The contact portion 34 of the capping layer 19 is disposed in a region that does not vertically overlap the first contact layer 15 and the reflective layer 17 . The contact portion 34 of the capping layer 19 may be disposed at a lower position than the light emitting structure 10 and may be in direct contact with the second electrode 25 .

The second electrode 25 may be formed as a single layer or a multilayer, and the single layer may be Au, and in the case of a multilayer, it may include at least two of Ti, Ag, Cu, and Au. Here, in the case of a multi-layer structure, it may be a Ti/Ag/Cu/Au stacked structure or a Ti/Cu/Au stacked structure. At least one of the reflective layer 17 and the first contact layer 15 may be in direct contact with the second electrode 25 , but is not limited thereto.

The second electrode 25 may be disposed in a region between the outer sidewall of the first electrode layer 20 and the light emitting structure 10 . The lower protective layer 30 and the light transmitting layer 45 may contact the circumference of the first electrode 25 .

The lower protective layer 30 is disposed on the lower surface of the light emitting structure 10 , and may be in contact with the lower surface of the second conductivity-type semiconductor layer 13 and the first contact layer 15 , and the reflective layer 17 . ) can be in contact with

An inner portion of the lower protective layer 30 that vertically overlaps with the light emitting structure 10 may be disposed to vertically overlap with the region of the protrusion 16 . The outer portion of the lower protective layer 30 extends over the contact portion 34 of the capping layer 19 and is disposed to vertically overlap the contact portion 34 . The outer portion of the lower protective layer 30 may be in contact with the second electrode 25 , for example, disposed on a peripheral surface of the second electrode 25 .

The inner portion of the lower protective layer 30 is disposed between the light emitting structure 10 and the first electrode layer 20 , and the outer portion is disposed between the light transmitting layer 45 and the contact portion 34 of the capping layer 19 . can be placed. The outer portion of the lower protective layer 30 may extend to an area outside the sidewall of the light emitting structure 10 to prevent moisture from penetrating.

The lower protective layer 30 may be defined as a channel layer, a low refractive material, or an isolation layer. The lower protective layer 30 may be implemented with an insulating material, for example, with oxide or nitride. For example, the lower protective layer 30 is at least from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. One can be selected and formed. The lower protective layer 30 may be formed of a transparent material.

The light emitting device according to the embodiment may include an insulating layer 41 electrically insulating the first electrode layer 20 and the second electrode layer 50 . The insulating layer 41 may be disposed between the first electrode layer 20 and the second electrode layer 50 . An upper portion of the insulating layer 41 may be in contact with the lower protective layer 30 . The insulating layer 41 may be formed of, for example, oxide or nitride. For example, the insulating layer 41 is at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. may be selected and formed.

The insulating layer 41 is in contact with the lower surface of the first electrode layer 20 and the upper surface of the second electrode layer 50, the lower protective layer 30, the capping layer 19, the contact layer 15, The reflective layer 17 may be formed to be thicker than each thickness.

The second electrode layer 50 includes a diffusion barrier layer 52 disposed under the insulating layer 41 , a bonding layer 54 disposed under the diffusion barrier layer 52 , and a bonding layer 54 disposed under the diffusion barrier layer 52 . It may include a conductive support member 56 , and may be electrically connected to the first conductivity-type semiconductor layer 11 . In addition, the second electrode layer 50 selectively includes one or two of the diffusion barrier layer 52 , the bonding layer 54 , and the conductive support member 56 , and the diffusion barrier layer 52 or At least one of the bonding layers 54 may not be formed.

The diffusion barrier layer 52 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The diffusion barrier layer 52 may function as a diffusion barrier layer between the insulating layer 41 and the bonding layer 54 . The diffusion barrier layer 52 may be electrically connected to the bonding layer 54 and the conductive support member 56 , and may be electrically connected to the first conductivity-type semiconductor layer 11 .

The diffusion barrier layer 52 may function to prevent the material included in the bonding layer 54 from being diffused in the direction of the reflective layer 17 in the process in which the bonding layer 54 is provided. The diffusion barrier layer 52 may prevent a material such as tin (Sn) included in the bonding layer 54 from affecting the reflective layer 17 .

The bonding layer 54 includes a barrier metal or a bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. may include The conductive support member 56 may support the light emitting structure 10 according to an embodiment and perform a heat dissipation function. The bonding layer 54 may include a seed layer.

The conductive support member 56 is a metal or carrier substrate, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W or a semiconductor substrate implanted with impurities (eg, Si, Ge) , GaN, GaAs, ZnO, SiC, SiGe, etc.) may be formed of at least one. The conductive support member 56 is a layer for supporting the light emitting device, and the thickness thereof is 80% or more of the thickness of the second electrode layer 50 and may be formed to be 30 μm or more.

Meanwhile, the second contact layer 33 is disposed inside the first conductivity type semiconductor layer 11 and is in contact with the first conductivity type semiconductor layer 11 . An upper surface of the second contact layer 33 may be disposed above a lower surface of the first conductivity-type semiconductor layer 11 , and electrically connected to the first conductivity-type semiconductor layer 11 , and the active layer 12 . and the second conductivity type semiconductor layer 13 .

The second contact layer 33 may be electrically connected to the second electrode layer 50 . The second contact layer 33 may be disposed to penetrate through the first electrode layer 20 , the active layer 12 , and the second conductivity-type semiconductor layer 15 . The second contact layer 33 is disposed in a recess 2 disposed in the light emitting structure 10, the active layer 12, the second conductivity type semiconductor layer 15, and a lower protective layer ( 30) is insulated. A plurality of the second contact layers 33 may be disposed to be spaced apart from each other.

The second contact layer 33 may be connected to the protrusion 51 of the second electrode layer 50 , and the protrusion 51 may protrude from the diffusion barrier layer 52 . The protrusion 51 may penetrate through the hole 41A disposed in the insulating layer 41 and the lower protective layer 30 , and may be insulated from the first electrode layer 20 .

The second contact layer 33 may include, for example, at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. As another example, the protrusion 501 may include at least one of a material constituting the diffusion barrier layer 52 and the bonding layer 54 , but is not limited thereto. For example, the protrusion 51 may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta.

The second electrode 25 is electrically connected to the first electrode layer 20 and the second conductive semiconductor layer 13 , and may be exposed in a region outside the sidewall of the light emitting structure 10 . One or a plurality of the second electrodes 25 may be disposed. The second electrode 25 may include, for example, at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The light-transmitting layer 45 may protect the surface of the light-emitting structure 10 , and may insulate between the second electrode 25 and the light-emitting structure 10 , and may be separated from the periphery of the lower protective layer 30 . can be contacted. The light-transmitting layer 45 may have a lower refractive index than a material of the semiconductor layer constituting the light-emitting structure 10 , and may improve light extraction efficiency. The light-transmitting layer 45 may be formed of, for example, oxide or nitride. For example, the light-transmitting layer 45 is at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, and the like. may be selected and formed. Meanwhile, the light-transmitting layer 45 may be omitted according to design. According to an embodiment, the light emitting structure 10 may be driven by the first electrode layer 20 and the second electrode layer 50 .

The first light emitting device has a vertical electrode structure in which the second electrode 25 is disposed on or around a part of the light emitting structure 10 , and the second electrode layer 50 having a supporting member as the first electrode is disposed thereunder. A light emitting chip having a may be provided.

Meanwhile, the light emitting device package according to the embodiment may be applied to a light source device. In addition, the light source device may include a display device, a lighting device, a head lamp, etc. according to an industrial field. As an example of the light source device, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module that emits light and includes a light emitting device, and is disposed in front of the reflecting plate and guides the light emitted from the light emitting module to the front A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp is a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and is reflected by the reflector It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by a designer.

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by those of ordinary skill in the art to which the embodiments belong. Accordingly, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the embodiment has been described above, it is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications that have not been made are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

110: circuit board
131,132: light emitting device
113, 115: electrode part
135: wire
140: reflective member
142: molding member
Pa: first pad
Pb: second pad
P1: 3rd pad
P2: 4th pad
P10, P11, P20: Line part

Claims (11)

a circuit board having first and second electrode portions separated from each other, and a plurality of pads between the first and second electrode portions; and
It includes a plurality of first light emitting elements and a plurality of second light emitting elements disposed on the plurality of pads,
The plurality of pads of the circuit board,
a first pad electrically connected to the first electrode part;
a second pad electrically connected to the second electrode part; and
a connection pad disposed between the first and second pads and having third and fourth pads electrically connected to each other; includes,
The plurality of first and second light emitting devices each include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. a structure, a first electrode electrically connected to the first conductivity-type semiconductor layer, and a second electrode electrically connected to the second conductivity-type semiconductor layer,
the first pad and the fourth pad are disposed to face the second electrode of the first light emitting device disposed in a lower region of the first light emitting device and are electrically connected;
The second pad and the third pad are disposed to face and electrically connected to the first electrode of the second light emitting device disposed in the lower region of the second light emitting device,
The first electrode of the first light emitting device disposed on the upper region of the first light emitting device and the second electrode of the second light emitting device disposed on the upper region of the second light emitting device are electrically connected with a wire. package. The method of claim 1,
A plurality of connection pads are disposed between the first pad and the second pad,
The circuit board includes a first line portion connecting the first electrode portion and the first pad, a second line portion connecting the second electrode portion and the second pad, and third and third of the respective connection pads. A light emitting device package including a third line portion connecting the 4 pads. 3. The method of claim 2,
The first to third line portions have a width and a length smaller than those of the first pad, the second pad, and the connection pad. The light emitting device package of claim 2 , wherein the first light emitting device and the second light emitting device are alternately disposed with each other and connected in series. 5. The method according to any one of claims 2 to 4,
The third line portion is a light emitting device package having a length shorter than the length of the wire. delete delete 6. The method of claim 5,
A light emitting device package, wherein a plurality of light emitting units in which the first light emitting device and the second light emitting device are connected in series are disposed between the first electrode unit and the second electrode unit. delete delete delete

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