KR102401438B1 - Organic light emitting diode display device - Google Patents

Abstract

The present invention relates to an organic light emitting display device. More specifically, an organic light emitting display device according to an embodiment of the present invention includes a substrate, a thin film transistor on the substrate, a protective layer on the thin film transistor, an absorption layer on the protective layer, an overcoat layer on the absorption layer, and the and a pixel electrode on the overcoat layer. An organic light emitting display device according to another embodiment of the present invention includes a substrate, a thin film transistor on the substrate, a protective layer on the thin film transistor, an overcoat layer on the protective layer, and a pixel electrode on the overcoat layer, The electrode pattern included in the thin film transistor includes a region having a first thickness and a region having a second thickness smaller than the first thickness. Also, in the organic light emitting display device according to another embodiment of the present invention, a pixel region defined by a gate line, a data line orthogonal to the gate line, and the gate line and the data line crossing the data line, and the data line toward the pixel region a protective layer including a protruding electrode pattern and a portion of a contact hole provided on the same layer as the electrode pattern on the electrode pattern, and the electrode pattern and a pixel electrode on the protective layer, wherein the pixel electrode passes through the contact hole It is connected to the electrode pattern, and the pixel electrode includes a hole in a portion of a region overlapping with the electrode pattern except for a region overlapping the contact hole, so that it is possible to improve the yield without reducing the aperture ratio of the panel.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE}

The present invention relates to an organic light emitting display device, and to an organic light emitting display device capable of improving a yield while preventing a decrease in an aperture ratio of a pixel electrode.

Recently, as we enter the information age in earnest, the field of display that visually expresses electrical information signals has developed rapidly, and in response to this, various flat panel display devices ( Flat Display Device) has been developed and is rapidly replacing the existing cathode ray tube (CRT).

Specific examples of such a flat panel display device include a liquid crystal display device (LCD), an organic light emitting display device (OLED), an electrophoretic display device (EPD, Electric Paper Display), Plasma Display Panel device (PDP), Field Emission Display device (FED), Electro luminescence Display Device (ELD) and Electro-Wetting Display (EWD) and the like. They commonly include a flat panel display panel that implements an image as an essential component, and the flat panel display panel includes a pair of face-to-face bonding substrates with a unique light emitting material or polarizing material layer therebetween.

Among the flat panel display devices described above, interest in an organic light emitting display device including an organic light emitting device has recently been on the rise. Accordingly, research on related technologies is rapidly progressing.

In order to improve the yield in the manufacturing process of the organic light emitting display device, in the case of a defective bright spot, a method of cutting the wiring using a laser is mainly used to darken the bright spot where the problem occurs, and this method is known to be very efficient. there is.

However, when wiring is cut by the laser cutting method, defects occur in wiring other than the wiring that needs to be cut, so there is a problem that other wiring cannot be placed on top of the wiring that needs to be cut. For example, when the source electrode or the drain electrode needs to be cut, since the pixel electrode cannot be formed thereon, there is a problem in that the aperture ratio of the OLED panel decreases in the organic light emitting display device.

Specifically, referring to FIG. 1A , the pixel region 3 is defined by crossing the gate line 1 and the data line 2 . Referring to FIG. 1B , which is a cross-sectional view taken in the A-A′ direction, it can be seen that the pixel electrode is not disposed on the laser-cut source/drain electrode 8 to prevent defects in the pixel electrode. Accordingly, since the pixel area 3 is relatively reduced, the aperture ratio of the panel is lowered even though the yield is improved by improving the bright spot defect.

Accordingly, there is a need for a technology capable of simultaneously securing the aperture ratio of the panel while improving the yield.

An object of the present invention is to provide an organic light emitting display device capable of improving a yield without reducing an aperture ratio of a panel.

An organic light emitting display device according to an embodiment of the present invention includes a substrate, a thin film transistor disposed on the substrate, a protective layer disposed on the thin film transistor, an absorption layer disposed on the protective layer, and an absorption layer disposed on the absorption layer an overcoat layer and a pixel electrode disposed on the overcoat layer.

The absorption layer may include at least one material selected from the group consisting of molybdenum (Mo) and molybdenum (MoTi), and may also include an island shape, and may have a thickness of 500 to 3000 Å.

An organic light emitting display device according to another embodiment of the present invention includes a substrate, a thin film transistor on the substrate, a protective layer on the thin film transistor, an overcoat layer on the protective layer, and a pixel electrode on the overcoat layer, The electrode pattern included in the thin film transistor includes a region having a first thickness and a region having a second thickness smaller than the first thickness.

The first thickness of the electrode pattern may be 1000 to 2000 Å, the second thickness may be 50 to 800 Å, and the width of the region having the first thickness of the electrode pattern is the width of the region having the second thickness. could be narrower.

In an organic light emitting display device according to another embodiment of the present invention, a pixel region defined by a gate line, a data line orthogonal to the gate line, and the gate line and the data line crossing the data line, and the data line protrude toward the pixel region a protective layer including an electrode pattern and a portion of a contact hole provided on the same layer as the electrode pattern on the electrode pattern, and a pixel electrode overlapping the electrode pattern on the protective layer, wherein the pixel electrode includes the contact hole is connected to the electrode pattern through The pixel electrode may overlap the electrode pattern by 80% or more.

According to an embodiment of the present invention, an absorbing layer on the protective layer and an overcoat layer on the absorbing layer may be further included, and the pixel electrode may be provided on the overcoat layer. According to another embodiment of the present invention, The electrode pattern may include a region having a first thickness and a region having a second thickness thinner than the first thickness, and the region having the first thickness among the electrode patterns may have a multilayer structure.

Also, according to another embodiment of the present invention, the pixel electrode may include a hole in a portion of a region overlapping with the electrode pattern except for a region overlapping with the contact hole, and the area of the hole is 1600 to 2500 μm ² days can

The organic light emitting display device of the present invention can improve the aperture ratio of the panel even when wiring is cut using a laser to increase the yield.

Accordingly, lifespan can be improved by securing an aperture ratio, and a yield in manufacturing an organic light emitting display device can be improved.

1A is a plan view of a conventional organic light emitting display device, and FIG. 1B is a cross-sectional view of the organic light emitting display device of FIG. 1A cut in the AA′ direction.
2 is a plan view of an organic light emitting display device according to an embodiment of the present invention.
FIG. 3 is a cross-sectional view of the organic light emitting display device of FIG. 2 taken in a BB′ direction.
4 is a plan view of an organic light emitting display device according to an embodiment of the present invention.
FIG. 5 is a cross-sectional view of the organic light emitting display device of FIG. 4 taken in a direction CC′.
6A to 6H are diagrams illustrating a method of manufacturing an electrode pattern included in the organic light emitting display device of FIG. 4 , and FIG. 6I is a schematic view of a wiring width plane of the electrode pattern manufactured according to FIGS. 6A to 6H It is a drawing.
7 is a plan view of an organic light emitting display device according to an embodiment of the present invention.
8 is a cross-sectional view of the organic light emitting display device of FIG. 7 taken in a DD' direction.

In the description of embodiments, each layer, film, electrode, plate or substrate, etc. is described as being formed “on” or “under” each layer, film, electrode, plate or substrate, etc. In some instances, “on” and “under” include both “directly” or “indirectly” formed through another element.

In addition, the criteria for the upper, side, or lower of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for explanation, and does not mean a size actually applied.

Hereinafter, an embodiment according to the present invention will be described in detail with reference to the accompanying drawings.

An organic light emitting display device according to an embodiment of the present invention will be described with reference to FIGS. 2 and 3 . FIG. 2 is a plan view of an organic light emitting display device according to an embodiment of the present invention, and FIG. 3 is a cross-sectional view illustrating the organic light emitting display device of FIG. 2 cut in the B-B' direction.

An organic light emitting display device according to an embodiment of the present invention includes a substrate 16, a thin film transistor (TFT) disposed on the substrate 16, a protective layer 19 disposed on the thin film transistor, and the protective layer ( 19) includes an absorption layer 15 disposed on the absorbent layer 15 , an overcoat layer 20 disposed on the absorption layer 15 , and a pixel electrode disposed on the overcoat layer 20 . In addition, a configuration generally used in the art may be further included between each layer without departing from the object of the present invention.

The organic light emitting display device according to an embodiment of the present invention includes a substrate 16 divided into a display area and a non-display area. The display area is divided into a plurality of pixel areas 13 . At least one thin film transistor TFT is formed in each pixel region 13 . In addition, an organic light emitting device OL electrically connected to the thin film transistor TFT is formed.

The thin film transistor TFT includes a gate electrode (not shown), a semiconductor layer (not shown), and an electrode pattern (eg, a source electrode and a drain electrode) 18 . In detail, a gate line 12 formed in one direction and a gate electrode branched from the gate line 12 are formed on the substrate 16 . A gate insulating layer is formed on the gate line 12 and the gate electrode.

The substrate 16 may be an insulating substrate. In this case, the substrate 16 may include silicon (Si), glass, plastic, or polyimide (PI). However, the present invention is not limited thereto, and a material capable of supporting a plurality of layers and devices formed on the substrate 16 is sufficient.

In addition, the gate line 12 and the gate electrode may be formed of a single layer or a multilayer of two or more layers. The gate line 12 and the gate electrode are formed of a conductive material. For example, the gate line 12 and the gate electrode may include aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), tantalum (Ta), It may include any one selected from the group consisting of titanium (Ti) and combinations thereof. However, materials forming the gate line 12 and the gate electrode are not limited thereto.

Also, the gate insulating layer may be formed of a dielectric material or a high-k dielectric material. For example, the gate insulating layer may include any one selected from the group consisting of SiOx, SiNx, SiON, HfO ₂ , Al ₂ O ₃ , Y ₂ O ₃ , Ta ₂ O ₅ and combinations thereof. However, the material constituting the gate insulating layer is not limited thereto. In addition, the gate insulating layer may be formed of a single layer or a multilayer of two or more layers.

A semiconductor layer (not shown) is formed on the gate insulating layer. The semiconductor layer may be formed of a single layer or a multilayer of two or more layers. For example, the semiconductor layer may include at least one material selected from the group consisting of an oxide semiconductor material, a silicon material including a-Si and p-Si, an organic semiconductor material, carbon nanotube (CNT), and graphene. can be formed with However, the material constituting the semiconductor layer is not limited thereto.

An etch stop layer for protecting a channel region of the semiconductor layer may be formed on the semiconductor layer. In addition, an insulating layer 17 may be further formed between the semiconductor layer and the electrode pattern (eg, a source electrode and a drain electrode) 18 . The insulating layer 17 is disposed between the semiconductor layer and the electrode pattern 18 . can have an insulating function.

A data line 11 and an electrode pattern 18 branched from the data line 11 are formed on the substrate 16 on which the semiconductor layer is formed. The data line is formed to extend in one direction different from the gate line 12 and is formed to cross the gate line. A pixel region 13 is defined by crossing the gate line 12 and the data line 11 .

The electrode pattern 18 is formed to overlap the semiconductor layer. The thickness of the electrode pattern 18 may be, for example, 1500 to 2500 Å, but is not necessarily limited thereto.

In an embodiment of the present invention, the data line 11 and the electrode pattern 18 may be formed in a single layer or in multiple layers of two or more.

The data line 11 and the electrode pattern 18 are formed of a conductive material. For example, the data line 11 and the electrode pattern 18 may include aluminum (Al), tungsten (W), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), and tantalum. (Ta), titanium (Ti), and may include any one selected from the group consisting of combinations thereof, but is not necessarily limited thereto.

A protective layer 19 is formed on the thin film transistor TFT including the gate electrode, the semiconductor layer, and the electrode pattern 18 . The protective layer 19 functions to insulate between the thin film transistor and the absorber layer 15 , and the absorber layer 15 is disposed on the protective layer 19 as described above.

The protective layer 19 may include a contact hole exposing the electrode pattern 18 .

The thickness of the protective layer 19 may be, for example, 400 to 500 Å, but is not limited thereto.

The absorption layer 15 according to an embodiment of the present invention is disposed on the protective layer 19 .

As described above, in order to prevent the laser from being transmitted to other components when cutting a line using a laser for darkening of a bright spot defect, the present invention includes the absorption layer 15 . Accordingly, since the laser passing through the electrode pattern 18 is not transmitted to the pixel electrode 21 , a problem in which a defect occurs in the pixel electrode 21 can be solved. In the present invention, laser cutting is the same as the direction shown in the drawings.

Accordingly, since the pixel electrode 21 can be formed even in the upper portion of the portion that needs to be cut, it is possible to prevent a decrease in the aperture ratio of the OLED panel to secure lifespan, and to improve the yield of the organic light emitting display device.

The absorption layer 15 according to the present invention is a metal easily absorbing laser and there is no limitation in the type of the material as long as it does not deviate from the purpose of the present invention, for example, molybdenum (Mo), molybdenum (MoTi) may be used, and these may be used alone or in combination of two or more.

In addition, the material of the absorption layer 15 may vary depending on the wavelength of the laser used for line cutting, and a short wavelength laser may be used as the laser used for cutting, and specific examples thereof include 1064 nm, 532 nm, 355 nm, etc. . Among them, if the absorption layer 15 is formed of motitanium (MoTi), it is most suitable for absorption of a laser having a wavelength of 1064 nm.

In order to prevent the energy absorbed by the absorption layer 15 from being transmitted to other components of the organic light emitting display positioned around the absorption layer 15, the absorption layer 15 should not participate in electrical signal transmission. To this end, the absorption layer 15 may be spaced apart from other components formed of metal, and preferably, the absorption layer 15 may include an island shape. More preferably, when the absorption layer 15 is formed only in the shape of an island, the absorption layer 15 is disconnected from other components to prevent transmission of electrical signals to other components during laser cutting. The defect prevention effect is remarkable.

The thickness of the absorption layer 15 is not particularly limited as long as it does not deviate from the object of the present invention, and may preferably be 500 to 3000 Å. If the thickness of the absorption layer 15 is less than 500 Å, the laser absorption effect may be reduced, and thus the protection of the pixel electrode 21 may be insufficient. If the thickness exceeds 3000 Å, planarization of the overcoat layer may become difficult.

An overcoat layer 20 is disposed on the absorption layer 15 .

In an embodiment of the present invention, the overcoat layer 20 serves to protect the lower arrangement during the manufacturing process as well as the insulating function and the planarization function of reducing the thickness difference according to the lower arrangement.

The thickness of the overcoat layer 20 may be, for example, about 2 μm, but is not necessarily limited thereto.

A pixel electrode 21 is disposed on the overcoat layer 20 . The pixel electrode 21 may be connected to the electrode pattern 18 through a contact hole formed in the protective layer 19 .

The pixel electrode 21 may be formed of a plurality of layers including a layer formed of ITO or the like on a layer formed of silver, aluminum, or the like, but may be formed of a single layer. If the pixel electrode 21 is formed of a plurality of layers, the thickness of the lower layer may be about 1000 Å and the thickness of the upper layer may be about 100 Å, but is not limited thereto.

As described above, in one embodiment of the present invention, the pixel electrode 21 is also on the upper portion of the cut electrode pattern 18 as the laser is prevented from being transmitted to the pixel electrode 21 during laser cutting by including the absorption layer 15 . ) can be arranged. Accordingly, the area of the pixel region 13 can be increased. As a result, the lifespan of the organic light emitting display device is extended by securing the aperture ratio of the panel, and the most efficient laser cutting method can be used to solve the bright spot defect. It is possible to improve the yield of the electroluminescent display device.

Hereinafter, an organic light emitting display device according to an embodiment of the present invention will be described with reference to FIGS. 4 to 6I . 4 is a plan view of the organic light emitting display device according to an embodiment of the present invention, and FIG. 5 is a cross-sectional view of the organic light emitting display device of FIG. 4 taken along a C-C' direction.

The organic light emitting display device according to an exemplary embodiment of the present invention may include the same and similar components except for the organic light emitting display device and the absorption layer 15 according to the above-described exemplary embodiment. Descriptions of the same and similar parts as those of the organic light emitting display device according to the embodiment of the present invention described above may be omitted. The same reference numerals are assigned to the same components.

4 and 5 , in the organic light emitting display device according to an embodiment of the present invention, when a laser is used to cut a wire to improve defects, the laser is transmitted to the pixel electrode 21 to prevent a defect from occurring. For this reason, the electrode pattern 18 included in the thin film transistor includes a thickness difference.

More specifically, an embodiment of the present invention provides a substrate 16 , a thin film transistor disposed on the substrate 16 , a protective layer 19 disposed on the thin film transistor, and disposed on the protective layer 19 . the overcoat layer 20 and the pixel electrode 21 disposed on the overcoat layer 20, wherein the electrode pattern 18 included in the thin film transistor has a region having a first thickness and less than the first thickness. and a region having a thin second thickness.

The thickness of the laser cutting portion of the electrode pattern 18 is thin and the other portions are thick, so that the intensity of the laser required for cutting the electrode pattern 18 is relatively reduced. That is, since the laser intensity is weak and the laser is not transmitted to the pixel electrode 21 , defects of the pixel electrode 21 can be prevented, so that the pixel electrode can also be disposed on the cut electrode pattern 18 . Accordingly, it is possible to secure the aperture ratio and at the same time improve the yield.

In the present specification, the thickness of the electrode pattern 18 refers to the height of the electrode pattern 18 appearing on a cross section of the organic light emitting display device when viewed from above and vertically cut. Since the thickness difference is sufficient to be formed in the laser-cutting portion, it is not necessary to have a thickness difference in all portions of the electrode pattern 18 included in the thin film transistor.

A process of forming the electrode pattern 18 having a thickness difference will be described with reference to FIGS. 6A to 6H .

An insulating layer 17 is formed on the substrate 16, and a photoresist pattern a 22 is formed thereon through exposure and development processes using a halftone mask (FIG. 6A). Next, a portion of the insulating layer 17 on which the photoresist pattern a 22 is not formed is etched. In this case, a dry etching method may be used ( FIG. 6B ).

Thereafter, a part of the photoresist pattern a 22 is ashed ( FIG. 6C ), and an electrode pattern 18 is formed. In order to have the electrode patterns have a thickness difference, two or more deposition processes may be performed.

More specifically, after the electrode pattern forming material (source electrode or drain electrode material) is first applied (FIG. 6D), the electrode pattern layer 18a of the portion where the photoresist pattern a 22 is formed and the remaining photoresist pattern a (22) is peeled off (Fig. 6e). Then, after the second electrode pattern forming material is applied (18b) (FIG. 6F), a photoresist pattern b23 is formed through exposure and development processes (FIG. 6G). In this case, a halftone mask is not required. it may not be Thereafter, a portion of the electrode pattern 18 in which the photoresist pattern b 23 is not formed is etched, and the photoresist pattern b 23 is peeled off, and the etching may be performed by wet etching ( FIG. 6H ).

As described above, since the organic light emitting display device according to an embodiment of the present invention uses a halftone mask during the manufacturing process of the electrode pattern 18 and undergoes two deposition processes, the electrode pattern 18 may have a thickness difference. .

Regarding the thickness of the electrode pattern 18, for example, the first thickness may be 1000 to 2000 Å, and the second thickness may be 50 to 800 Å, but if it is within the range not departing from the object of the present invention, it must be It is not limited. When the electrode pattern 18 has a thickness difference within the above-described range, it may be advantageous for securing an aperture ratio, but may not affect the function of the electrode pattern.

In the present specification, the wiring width means the length of the line when the line is drawn perpendicular to the direction I-I' in FIG. 6I . FIG. 6I is a diagram schematically illustrating a plane of a wiring width of the electrode pattern manufactured according to FIGS. 6A to 6H , which will be described below with reference to FIG.

If the cross-sectional area is the same, the resistance of the wiring is the same. Therefore, in the organic light emitting display device according to an embodiment of the present invention, the electrode pattern 18 has a thickness difference, and the width of the thick portion is narrower than the width of the thin portion. can make it That is, the region having the first thickness of the electrode pattern 18 may have a narrow wiring width, and the region having the second thickness may have a wide wiring width. In this case, the same resistance can be implemented regardless of the thickness difference between the electrode patterns 18 .

With respect to the following embodiments of the present invention, descriptions of parts that are the same as those of the organic light emitting display device according to the embodiment of the present invention described above may be omitted, and the same reference numerals are used for the same components. give

In the organic light emitting display device according to an embodiment of the present invention, a gate line 12 and a data line 11 orthogonal to the gate line 12 and the gate line 12 and the data line 11 intersect In the defined pixel region 13 and the data line 11 , the electrode pattern 18 protrudes toward the pixel region 13 and the electrode pattern 18 in the same layer as the electrode pattern 18 among the contact holes on the electrode pattern 18 . a protective layer 19 including a provided portion and a pixel electrode 21 overlapping the electrode pattern 18 on the protective layer 19 , wherein the pixel electrode 21 is connected to the electrode through a contact hole It is connected to the pattern (18).

In this case, even when laser cutting is required on the electrode pattern 18 , the pixel electrode 21 can be arranged up to a region overlapping the electrode pattern 18 among the upper portions of the electrode pattern 18 . Accordingly, the area of the pixel region 13 can be increased. As a result, the lifespan of the organic light emitting display device is extended by securing the aperture ratio of the panel, and the most efficient laser cutting method can be used to solve the bright spot defect. It is possible to improve the yield of the electroluminescent display device.

According to an embodiment of the present invention, the pixel electrode 21 may overlap the electrode pattern 18 by 80% or more.

At this time, according to an exemplary embodiment of the present invention, it further includes an absorption layer 15 disposed on the protective layer 19 and an overcoat layer 20 disposed on the absorption layer 15, and the pixel electrode 21 ) may be provided on the overcoat 20 layer (see FIGS. 2 and 3 ).

In addition, according to another embodiment of the present invention, the electrode pattern 18 may include a region having a first thickness and a region having a second thickness thinner than the first thickness, and in this case, the electrode pattern 18 The region having a thickness of 1 may have a multi-layer structure (refer to FIGS. 4 to 6I), and it is preferable that the region having the first thickness have a multi-layer structure from the viewpoint of process easiness.

Hereinafter, an organic light emitting display device according to an embodiment of the present invention will be described with reference to FIGS. 7 and 8 . 7 is a plan view of the organic light emitting display device according to an embodiment of the present invention, and FIG. 8 is a cross-sectional view showing the organic light emitting display device of FIG. 7 taken in the D-D' direction.

The organic light emitting display device according to an exemplary embodiment of the present invention may include the same and similar components except for the organic light emitting display device and the absorption layer 15 according to the above-described exemplary embodiment. Descriptions of the same and similar parts as those of the organic light emitting display device according to the embodiment of the present invention described above may be omitted. The same reference numerals are assigned to the same components.

Referring to FIGS. 7 and 8 , when a laser is used to cut wiring to improve defects, the pixel electrode 21 includes a hole 24 in order to prevent a problem from occurring due to the laser being transmitted to the pixel electrode 21 . . More specifically, according to an embodiment of the present invention, a pixel is defined in which a gate line 12 and a data line 11 orthogonal to the gate line 12 and the gate line 12 and the data line 11 intersect each other. A protective layer 19 including an electrode pattern 18 protruding from the region 13 and the data line 11 toward the pixel region 13 , and a contact hole on the electrode pattern 18 , and the protective layer 19 . ), including a pixel electrode 21 provided to a region overlapping with the electrode pattern 18 , the pixel electrode 21 is connected to the electrode pattern 18 through a contact hole, and the pixel electrode 21 ) may include the hole 24 in a region overlapping the electrode pattern 18 , except for a region overlapping the contact hole.

It is sufficient that the hole 24 is formed in a region of the pixel electrode 21 including a laser cutting portion.

The pixel electrode 21 includes a hole 24 in the laser cutting area, and the organic light emitting display device includes the pixel electrode 21 but is not affected by the laser, and thus the electrode pattern 18 is laser cut. ) may be disposed on the pixel electrode 21 . Accordingly, since the area of the pixel region 13 can be secured, the yield of the organic light emitting display device can be improved while increasing the aperture ratio.

Specifically, the area of the hole 24 is 1600 to 2500 μm ² can be The area of the hole 24 is 1600 μm ² If it is less than , the effect of preventing laser transmission to the pixel electrode 21 may be reduced, and if the area of the hole 24 exceeds 2500 μm ² , the function of the pixel electrode 21 may be problematic.

The shape of the hole 24 may be a rectangle, a square, a circle, or the like, but is not necessarily limited thereto.

Experimental example

In contrast to the case where the area of the pixel region of the existing structure in which the electrode pattern (source electrode or drain electrode) is laser-cut and the pixel electrode is not disposed thereon is 7083 μm ² (Comparative Example), the present structure including the absorption layer 15 In one embodiment of the invention, the area of the pixel area is 8008 μm ² it was

That is, since the increase rate of the pixel area was about 13%, it was confirmed that it was possible to secure the aperture ratio while improving the yield by laser cutting the source/drain electrodes to prevent bright spot defects (see Table 1, FIGS. 1A and 2 below). ).

comparative example
pixel area area Example
pixel area area Pixel area increase rate 7083μm ² 8008μm ² 13%

Except for the above, it is a technology widely known in the art and can be applied to the organic light emitting display device of the present invention as long as it is within the scope not departing from the object of the present invention, and the description thereof will be omitted.

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

1: Gate line 2: Data line
3: pixel area 4: bank layer
6: Substrate
7: interlayer insulating film 8: source electrode and drain electrode
9: protective layer 10: overcoat layer
11: data line 12: gate line
13: pixel area 14: bank layer
15: absorption layer 16: substrate.
17: insulating layer 18: electrode pattern
19: protective layer 20: overcoat layer
21: pixel electrode 22: photoresist pattern a
23: photoresist pattern b 24: hole

Claims (14)

Board;
a thin film transistor on the substrate;
a protective layer on the thin film transistor;
an absorption layer on the protective layer;
an overcoat layer on the absorbent layer; and
a pixel electrode on the overcoat layer; and
and the absorption layer is electrically insulated from the thin film transistor and the pixel electrode.
The method according to claim 1,
The absorbing layer includes at least one material selected from the group consisting of molybdenum (Mo) and molybdenum (MoTi) as a material.
The method according to claim 1,
The absorbing layer includes an island shape.
The method according to claim 1,
The thickness of the absorption layer is 500 to 3000 Å, an organic light emitting display device.
Board;
a thin film transistor on the substrate;
a protective layer on the thin film transistor;
an overcoat layer on the protective layer; and
a pixel electrode on the overcoat layer; and
The electrode pattern included in the thin film transistor includes a region having a first thickness and a region having a second thickness thinner than the first thickness,
and the region having the first thickness and the region having the second thickness are disposed on the same layer.
6. The method of claim 5,
The first thickness of the electrode pattern is 1000 to 2000 Å, and the second thickness is 50 to 800 Å.
6. The method of claim 5,
A width of the region having the first thickness in the electrode pattern is narrower than a width of the region having the second thickness.
gate line;
a data line orthogonal to the gate line;
a pixel region defined by crossing the gate line and the data line;
an electrode pattern protruding from the data line toward the pixel area;
a protective layer provided on the electrode pattern and having a contact hole; and
a pixel electrode overlapping the electrode pattern on the protective layer; and
The pixel electrode is directly connected to the electrode pattern through the contact hole,
and the pixel electrode includes a hole overlapping the electrode pattern.
9. The method of claim 8,
and the pixel electrode overlaps the electrode pattern by 80% or more.
delete delete 6. The method of claim 5,
The region having the first thickness in the electrode pattern has a multilayer structure.
9. The method of claim 8,
and the pixel electrode includes the hole in a region overlapping the electrode pattern except for a region overlapping the contact hole.
14. The method of claim 13,
An area of the hole is 1600 to 2500 μm ² , an organic light emitting display device.

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