KR102378757B1 - Lighting source comprising micro-nano-fin light-emitting diodes and device comprising the same - Google Patents

Abstract

The present invention relates to an LED electrode assembly, and more particularly, to a micro-nanopin LED electrode assembly and a manufacturing method thereof.

Description

Light source including micro-nano-fin LED element and device including same

The present invention relates to a light source having an LED, and more particularly, to a light source including a micro-nanopin LED and a device including the same.

Light Emitting Diodes (LEDs) have several advantages such as low power consumption, high brightness, and long lifespan. In particular, in recent years, light emitting diodes have been spotlighted as a means to replace the conventional halogen or xenon lamps used as light sources in automobile headlamps or tail lamps. In addition, recently, micro LED and nano LED are used as core materials for various displays because they can realize excellent color and high efficiency, and are eco-friendly materials. In addition, in line with these market conditions, research is being conducted to develop a new nanorod LED structure or a nanocable LED with a shell coated by a new manufacturing process. In addition, research on a protective film material to achieve high efficiency and high stability of the protective film covering the outer surface of the nanorods or research and development of a ligand material advantageous for the subsequent process is in progress.

In line with such research in the field of materials, display TVs using red, green, and blue micro-LEDs have recently been commercialized. Various light sources used in lighting equipment, optical equipment, medical equipment, beauty equipment, and displays using micro-LED have high performance characteristics, theoretical lifespan and very long and high efficiency. Since micro-LEDs have to be placed individually, the electrode assembly implemented by placing micro-LEDs on the electrode with pick place technology has various sizes, shapes, and brightness due to the limitations of the process technology considering the high unit cost, high process defect rate, and low productivity. It is difficult to manufacture as a light source. In addition, it is more difficult to individually place nano-LEDs, which are smaller than micro-LEDs, on an electrode with the same pick and place technology as micro-LEDs.

In order to overcome this difficulty, the present inventor's Patent Publication No. 10-1429095 discloses that a nanorod-type LED mixed solution is dropped on an electrode and then an electric field is formed between two different electrodes to form a nanorod. Disclosed is a lamp manufactured through a method of self-aligning type LED elements on electrodes. However, the nanorod LED used has a problem in that a large number of LEDs must be mounted in order to achieve the desired efficiency because the light extraction area is small and the efficiency is not good, and the problem that the nanorod LED itself has a high possibility of defects there is

Specifically, for nanorod-type LED devices, it is known that an LED wafer is manufactured by a top-down method by mixing a nano-pattern process and dry etching/Ÿ‡ etching, or growing directly on a substrate by a bottom-up method. . In these nanorod-type LEDs, the long axis of the LED coincides with the stacking direction of each layer in the stacking direction, that is, in the p-GaN/InGaN multiple quantum well (MQW)/n-GaN stacked structure, so the light emitting area is narrow, and the light emitting area is relatively narrow. As a result, surface defects have a significant impact on efficiency degradation, and it is difficult to optimize the crystal-hole recombination rate.

Therefore, development of a light source using a new LED material that can be easily arranged using an electric field, has a large luminous area, minimizes or prevents reduction in efficiency due to surface defects, and has an optimized electron-hole recombination rate It is urgent.

Registered Patent Publication No. 10-1429095

The present invention has been devised to solve the above problems, and an object of the present invention is to provide a light source using a micro-nanopin LED having improved luminance and maintaining high efficiency by increasing a light emitting area and various devices including the same.

In addition, it is possible to prevent a decrease in efficiency due to surface defects by greatly reducing the area of the photoactive layer exposed on the surface while increasing the light emitting area, thereby stably emitting light with high luminance. Another purpose is to provide

In addition, the decrease in electron-hole recombination efficiency due to the non-uniformity of electron and hole velocities and the decrease in luminous efficiency due to this decrease, and the area of the photoactive layer exposed to the surface is greatly reduced while increasing the luminous area, thereby preventing the decrease in efficiency due to surface defects. It is another object to provide a light source using a micro-nanopin LED device and various devices including the same.

Furthermore, a light source using a micro-nanopin LED device, which can self-align the device on the electrode by an electric field without fear of an electrical short circuit, and has improved electrode arrangement design and electrode implementation easiness, and various devices including the same Another purpose is to provide

In order to solve the above problems, the present invention includes a support and a micro-nanopin LED electrode assembly provided on the support, wherein the micro-nanopin LED electrode assembly is disposed on the support and horizontally spaced at a predetermined interval A lower electrode line including a plurality of lower electrodes spaced apart in the direction, the length is greater than the thickness and the first conductive semiconductor layer, the photoactive layer and the second conductive semiconductor layer are stacked in the thickness direction, the first conductive semiconductor layer or the first conductive semiconductor layer A light source comprising a plurality of micro-nanopin LED devices disposed so that a two-conductive semiconductor layer is in contact with at least two adjacent lower electrodes, and an upper electrode line disposed on the plurality of micro-nanopin LED devices do.

According to an embodiment of the present invention, the support has a flat plate shape, and on at least one surface of the support may further include a coating layer having a color conversion material excited by light irradiated from the micro-nanopin LED electrode assembly. can

In addition, the support has a cup shape having an accommodating space therein, the micro-nanopin LED electrode assembly is provided in the accommodating space, and the accommodating space is excited by light irradiated from the micro-nanopin LED electrode assembly It may further include a color conversion material.

In addition, 2 to 100,000 micro-nanopin LED devices may be included per unit area of 100 x 100 μm ² of the micro-nanopin LED electrode assembly.

In addition, the micro-nanopin LED device has a plane having a length and a width of nano or micro size, and a thickness perpendicular to the plane is a rod-shaped device smaller than the length, and the length is 1000 to 10000 nm, and the thickness is may be 100 to 3000 nm.

In addition, the ratio of the length to the thickness of the micro-nanopin LED device may be 3:1 or more.

In addition, the width of the micro-nanopin LED device may be greater than or equal to the thickness.

In addition, one of the first conductive semiconductor layer and the second conductive semiconductor layer includes a p-type GaN semiconductor layer, and the other includes an n-type GaN semiconductor layer, and the p-type GaN semiconductor layer has a thickness of 10 to 350 nm, the thickness of the n-type GaN semiconductor layer may be 100 to 3000 nm, and the thickness of the photoactive layer may be 30 to 200 nm.

In addition, the micro-nano-fin LED device may further include a protective film formed on the side surface of the device to cover the exposed surface of the photoactive layer.

In addition, on the second conductive semiconductor layer of the micro-nanopin LED device, an electrode layer or a first polarization inducing layer is formed on one side in the longitudinal direction of the device, and an electrical polarity different from that of the first polarization inducing layer is formed on the other end side of the device. It may further include a polarization inducing layer formed with a bipolarization inducing layer.

In addition, on the lower surface of the first conductive semiconductor layer of the micro-nanopin LED device, a protrusion having a predetermined width and thickness is formed in the longitudinal direction of the device, and the width of the protrusion is 50% of the width of the micro-nanopin LED device It can be formed as follows.

In addition, the emission area of the micro-nanopin LED device may exceed twice the area of the vertical cross-section of the micro-nanopin LED device.

In addition, the micro-nanopin LED device may be a device that emits any one type of light among UV, blue, green, yellow, amber, and red.

In addition, a plurality of the micro-nanopin LED electrode assemblies are provided so as to emit at least two light colors among blue, green, yellow, amber and red, and each micro-nanopin LED electrode assembly emits substantially the same light color. Micro-nanopin LED devices may be included.

In addition, when the micro-nano-pin LED electrode assembly includes a micro-nano-pin LED device irradiating UV, the color conversion material includes at least one of blue, cyan, yellow, green, amber, and red, the light source If this is implemented to emit white light, or the micro-nano-pin LED electrode assembly is a micro-nano-pin LED device that emits blue light, the color conversion material includes at least one of yellow, cyan, green, amber and red. Thus, the light source may be implemented to emit white light.

In addition, a base substrate may be further included between the support and the lower electrode line.

Also, the distance between adjacent lower electrodes may be smaller than the length of the micro-nano pin LED device.

The present invention also provides a device comprising a light source according to the present invention.

Hereinafter, the terms used in the present invention are defined.

In the description of an embodiment according to the present invention, each layer, region, pattern or substrate, “on”, “top”, “top”, “under”, “below” of each layer, region, pattern ", "in the case of being described as being formed under "," "on", "upper", "upper", "under", "lower", "lower" refers to "directly" and " includes all meanings of "indirectly".

The micro-nano pin LED electrode assembly according to the present invention is advantageous in achieving high luminance and light efficiency by increasing the light emitting area of the device compared to the electrode assembly using the conventional rod-type LED device. In addition, while increasing the light emitting area of the device, the area of the photoactive layer exposed on the surface can be greatly reduced to prevent or minimize the decrease in efficiency due to surface defects, so that it is possible to realize an electrode assembly with excellent quality. Furthermore, the reduction in electron-hole recombination efficiency due to the non-uniformity of the electron and hole velocities of the used LED device and the reduction in luminous efficiency due to this are minimized, and since it is very suitable for the method of self-aligning the device on the electrode by an electric field, the electrode assembly Since it can be implemented more easily, it can be widely applied to various lighting, light sources, displays, and the like.

1, 2A and 2B are schematic diagrams of a light source according to an embodiment of the present invention.
3 and 4 are views of a micro-nanopin LED electrode assembly included in an embodiment of the present invention, FIG. 3 is a plan view of the micro-nanopin LED electrode assembly, and FIG. 4 is a line XX' of FIG. is a cross-sectional view.
5 is a schematic diagram illustrating an arrangement on an electrode based on the thickness direction of a micro-nanopin LED element in a micro-nanopin LED electrode assembly included in an embodiment of the present invention.
6A and 6B are schematic views of a first rod-type device in which a first conductive semiconductor layer, a photoactive layer, and a second conductive semiconductor layer are stacked in the thickness direction, respectively, and a first conductive semiconductor layer, a photoactive layer, and a second conductive semiconductor layer in the longitudinal direction; It is a schematic diagram of a second rod-type device in which layers are stacked.
7 to 10 are diagrams of a micro-nanopin LED device included in an embodiment of the present invention, FIG. 7 is a perspective view of the device, FIG. 8 is a cross-sectional view taken along line XX' of FIG. A cross-sectional view taken along the boundary line YY' of FIG. 10 is a schematic diagram of a manufacturing process of the device according to FIG. 7 .
11 to 14 are views of a micro-nanopin LED device included in an embodiment of the present invention. FIG. 11 is a perspective view of the device, FIG. 12 is a cross-sectional view taken along the XX′ boundary line of FIG. 11, and FIG. 13 is FIG. 11 A cross-sectional view taken along the boundary line YY' of FIG. 14 is a schematic diagram of a manufacturing process of the device according to FIG. 11 .
15 and 16 are schematic diagrams of a medical device and a cosmetic device according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail so that those of ordinary skill in the art can easily implement them. The present invention may be embodied in many different forms and is not limited to the embodiments described herein.

1, 2A and 2B, the light sources 2000, 2000' and 3000 according to an embodiment of the present invention include supports 1100, 1100', 1100" and the supports 1100, 1100' , 1100 ") provided on the micro-nanopin LED electrode assembly (1000, 1001, 1002, 1003) is provided.

The support (1100, 1100 ', 1100 ") is for supporting the micro-nanopin LED electrode assembly (1000, 1001, 1002, 1003), and when it has a certain level of mechanical strength or more to perform a support function Regardless, it can be used as a support without limitation, and as a non-limiting example, it may be at least one material selected from the group consisting of organic resins, ceramics, metals and inorganic resins. ,1100") may be transparent or opaque.

In addition, the shape of the support body (1100, 1100 ', 1100") may be a cup shape as shown in FIG. 1 or a plate shape as shown in FIGS. 2A and 2B, but is not limited thereto, and the light source It may have various shapes depending on the shape of the mounted surface. In addition, the area and/or volume of the supports 1100, 1100 ', 1100" also includes a luminance characteristic to be implemented and a micro-nanopin LED electrode provided accordingly. Since the number/arrangement structure of the assemblies 1000, 1001, 1002, and 1003 may be appropriately adjusted in consideration of the use of the light source, the present invention is not particularly limited thereto. In addition, the thickness of the support body (1100, 1100 ', 1100 ") can be appropriately adopted to a thickness sufficient to support the micro-nanopin LED electrode assembly (1000, 1001, 1002, 1003) in consideration of the strength of the material. .

On the other hand, like the support 1100 shown in FIG. 1 , the support itself serves as a housing for the light source as a component or device in addition to the function of supporting the micro-nanopin LED electrode assembly (1000,1001,1002,1003). make it clear that you can

Next, the micro-nanopin LED electrode assembly (1000, 1001, 1002, 1003) provided on the above-described support (1100, 1100 ', 1100 ") will be described with reference to FIGS. 3 to 5, a predetermined interval A lower electrode line 200 including a plurality of lower electrodes 211,212,213,214,215,216 spaced apart in the horizontal direction with a It is implemented including an upper electrode line 300 disposed in contact with the upper portion of the nano-pin LED elements 101, 102, 103.

First, prior to a detailed description of each configuration, the electrode lines 200 and 300 for self-aligning the micro-nanopin LED elements 101, 102, 103 and emitting light will be described.

The micro-nanopin LED electrode assembly 1000, 1001, 1002, 1003 is an upper electrode line 300 and a lower electrode line 200 disposed opposite to the upper and lower portions with the micro-nano pin LED elements 101, 102, 103 interposed therebetween. ) is included. Since the upper electrode line 300 and the lower electrode line 200 are not arranged in a horizontal direction, two types of electrodes implemented to have an ultra-small thickness and width are horizontally arranged in micro or nano units within a plane of a limited area. By breaking away from the complicated electrode line of the electrode assembly by the conventional electric field induction arranged to have a gap, the electrode design can be very simple and can be implemented more easily.

Specifically, the electrode assembly implemented by self-aligning elements through conventional electric field induction uses horizontally spaced electrodes as assembly electrodes to mount a rod-type micro LED element on the assembly electrode, The same electrode, that is, the assembly electrode as it is, is used as the driving electrode, whereas the lower electrode line 200 provided in the embodiment of the present invention functions as an assembly electrode, but the first conductive semiconductor is formed on the lower electrode line 200 . Since only the surface of the layer or the surface of the second conductive semiconductor layer is in contact, the micro-nanopin LED devices 101, 102, 103 cannot emit light only with the lower electrode line 200, and thus it is distinguished from the conventional electrode assembly through electric field induction. . This distinction causes a significant difference in the degree of freedom of electrode design and the ease of electrode design.

In other words, when the assembled electrode and the driving electrode are used as the same electrode, the rod-type micro LED element can be mounted as many as possible in the plane of a limited area, and at the same time, different voltages are applied at intervals of micro-nano size. It was not easy in the design or implementation of the electrode structure because it had to be implemented. However, since the same type of power (for example, (+) or (-) power) is applied to the lower electrode line 200 included in the present invention when driving, an electrical short between the lower electrodes 211,212,213,214,215,216 in the lower electrode line 200 is There is little concern. In addition, in the prior art, both ends of each rod-type ultra-small LED element had to correspond one-to-one to the adjacent electrodes, respectively, so that light could be emitted without an electrical short circuit. Accordingly, if each rod-type micro LED element is disposed across three or four adjacent electrodes, the photoactive layer of the rod-type micro LED element inevitably comes into contact with the electrode, and as a result, a short circuit occurs. Therefore, there was a difficulty in designing the electrode. However, since the surface of the micro-nanopin LED element 101, 102, 103 included in the present invention is in contact with the lower electrode line on the side of the first conductive semiconductor layer or the side of the second conductive semiconductor layer, it is spread over several adjacent lower electrodes 211, 212, 213, 214, 215, 216. Even when disposed, an electrical short does not occur, which has an advantage in that the lower electrode line 200 can be designed more easily.

In addition, the upper electrode line 300 is arranged as shown in FIGS. 3 and 4 so that electrical contact is possible on the upper surfaces of the micro-nanopin LED devices 101, 102, 103, so the design or implementation of the electrode is very easy. There is one advantage. In particular, although FIG. 3 shows that the upper electrode line 300 is divided into the first upper electrode 301 and the second upper electrode 302 to be implemented, all micro-nanopin LED devices arranged with only one upper electrode. Since it can be implemented to contact the upper surface of the electrode, there is an advantage that the electrode can be very simplified compared to the prior art.

The lower electrode line 200 is an assembly electrode for self-aligning the micro-nano-fin LED elements 101, 102, 103 so that the upper or lower surfaces of the micro-nano-pin LED elements 101, 102, 103 in the thickness direction are in contact with each other. It functions as one of the driving electrodes provided for emitting light to the micro-nanopin LED elements 101, 102, 103 together with the electrode line 300.

In addition, the lower electrode line 200 is implemented to include a plurality of lower electrodes 211 , 212 , 213 , 214 , 215 and 216 spaced apart in the horizontal direction at a predetermined interval. The number and spacing of the lower electrodes 211, 212, 213, 214, 215, 216 and the spacing between the electrodes may include the electrodes 211, 212, 213, 214, 215, 216 at an appropriately set number and spacing in consideration of the function as an assembly electrode and the length of the device.

In addition, if the plurality of lower electrodes 211 , 212 , 213 , 214 , 215 , 216 included in the lower electrode line 200 are arranged to be spaced apart in the horizontal direction, there is no specific electrode arrangement. It may have a structure in which it is arranged.

In addition, the distance between the adjacent lower electrodes 211,212,213,214,215,216 may be smaller than the length of the micro-nanopin LED device 100. If the distance between the two adjacent electrodes is equal to or wider than the length of the micro-nanopin LED device, the micro- The nanopin LED device can be self-aligned in a form sandwiched between two adjacent electrodes. can't

On the other hand, the lower electrode line 200 may be provided directly on the above-described supports 1100, 1100', 1100", but differently provided on a separate base substrate 401, the base substrate 401 It may be arranged to be placed on the supports 1100, 1100', 1100". The base substrate 401 supports the lower electrode line 200 , the upper electrode line 300 , and the micro-nanopin LED devices 101 , 102 , 103 interposed between the lower electrode line 200 and the upper electrode line 300 . It can perform a function as a support. The base substrate 401 may be any one selected from the group consisting of glass, plastic, ceramic, and metal, but is not limited thereto. In addition, a transparent material may be preferably used for the base substrate 401 in order to minimize loss of emitted light. In addition, the base substrate 401 may preferably be a flexible material. In addition, the size and thickness of the base substrate 401 may be appropriately changed in consideration of the size of the provided micro-nanopin LED electrode assembly, the specific design of the lower electrode line 200 , and the like.

Next, when the upper electrode line 300 is designed to be in electrical contact with the upper portions of the micro-nanopin LED elements 101 , 102 , 103 mounted on the lower electrode line 200 , the number, arrangement, shape, etc. are not limited. However, as shown in FIG. 1 , if the lower electrode lines 200 are arranged side by side in one direction, the upper electrode lines 300 may be arranged to be perpendicular to the one direction, and such an electrode arrangement is an electrode widely used in a display or the like in the prior art. As the arrangement, there is an advantage that the electrode arrangement and control technology of the conventional display field can be used as it is.

Meanwhile, FIG. 1 shows only the first upper electrode 301 and the second upper electrode 302 so that the upper electrode line 300 including them covers only some elements, but this is omitted for ease of description. As a result, it is revealed that there is an unillustrated upper electrode disposed on top of the micro-nanopin LED device.

The lower electrode line 200 and the upper electrode line 300 may have the material, shape, width, and thickness of an electrode used in a typical LED electrode assembly, and can be manufactured using a known method, so the present invention is specifically does not limit this to For example, the electrode may be aluminum, chromium, gold, silver, copper, graphene, ITO, or an alloy thereof, and may have a width of 2 to 50 μm and a thickness of 0.1 to 100 μm. It may be appropriately changed in consideration of the size and the like.

Next, the micro-nanopin LED devices 101 , 102 , 103 disposed between the lower electrode line 200 and the upper electrode line 300 described above will be described.

7 to 14, the micro-nanopin LED devices 108 and 109 according to an embodiment of the present invention have a length in an X-axis direction and a width in the Y-axis direction with respect to the mutually perpendicular X, Y, and Z axes. , when the Z-axis direction is the thickness, the length becomes the long axis, and the length at which the thickness becomes the short axis is a rod-shaped device larger than the thickness, and the first conductive semiconductor layer 10, the photoactive layer 20 and the second conductive semiconductor layer 10 in the thickness direction The device may include a second conductive semiconductor layer 30 and further include an electrode layer 40 or a polarization inducing layer 43 on the second conductive semiconductor layer 30 .

More specifically, the micro-nanopin LED devices 108 and 109 have a predetermined shape on an X-Y plane consisting of a length and a width, a direction perpendicular to the plane becomes a thickness direction, and each layer is stacked in the thickness direction. The micro-nanofin LED device having such a structure has an advantage in that it can secure a wider light emitting area due to the flat surface of the length and width even if the thickness of the photoactive layer 20 in the portion exposed to the side is thin. In addition, due to this, the light emitting area of the micro-nanopin LED device 100 according to an embodiment of the present invention may have a wide light emitting area exceeding twice the longitudinal cross-sectional area of the micro-nanopin LED device. Here, the longitudinal cross-section is a cross-section parallel to the X-axis direction, which is the longitudinal direction, and in the case of an element having a constant width, it may be the X-Y plane.

Specifically, referring to FIGS. 6A and 6B , both the first rod-type device 1 shown in FIG. 6A and the second rod-type device 1 ′ shown in FIG. 6B include the first conductive semiconductor layer 2 ), the photoactive layer 3 and the second conductive semiconductor layer 4 are stacked, the length (ℓ) and the thickness (m) are the same, and the thickness (h) of the photoactive layer is also the same rod-type device. . However, in the first rod-shaped element 1, the first conductive semiconductor layer 2, the photoactive layer 3, and the second conductive semiconductor layer 4 are stacked in the thickness direction, whereas the second rod-shaped element 1' ) is structurally different in that each layer is stacked in the longitudinal direction.

However, the two devices 1 and 1' have a large difference in the emission area. For example, the length (ℓ) is 4500 nm, the thickness (m) is 600 nm, and the thickness (h) of the photoactive layer 3 is 100 nm. Assuming that , the ratio of the surface area of the photoactive layer 3 of the first rod-type device 1 and the surface area of the photoactive layer 3 of the second rod-type device 1 ′ corresponding to the emission area is 6.42 μm ² : 0.75 In μm ² , the emission area of the first rod-shaped device 1 which is a micro-nanopin LED device is 8.56 times larger. In addition, the ratio of the surface area of the photoactive layer 3 exposed to the outside to the light emitting area of the total photoactive layer is similar to that of the first rod-shaped device 1 ′, but the photoactive layer 3 Since the absolute value of the unexposed surface area of is much larger, the effect on excitons of the exposed surface is much reduced, so that the first rod-type device 1, which is a micro-nanopin LED device, is a second rod-type device, which is a horizontally arranged rod-type device. Since the effect of surface defects on excitons is much smaller compared to the device 1', in terms of luminous efficiency and luminance, the first rod-type device 1, which is a micro-nanopin LED device, and the second rod, which is a horizontally arranged rod-type device It can be evaluated that it is significantly superior to that of the type element 1'. In addition, in the case of the second rod-type device 1 ′, a wafer on which a conductive semiconductor layer and a photoactive layer are stacked in the thickness direction is etched in the thickness direction. As a result, the long device length corresponds to the wafer thickness and increases the device length. In order to do this, an increase in the etched depth is unavoidable, but the greater the etch depth, the higher the possibility of defects on the device surface. Even if it is small, the possibility of surface defects is greater, and ultimately, the first rod-type device 1 can be significantly superior in luminous efficiency and luminance when considering a decrease in luminous efficiency due to an increase in the possibility of surface defects.

Further, the movement distance of the holes injected from any one of the first conductive semiconductor layer 2 and the second conductive semiconductor layer 4 and the electrons injected from the other is the first rod-type element 1 and the second rod-type element Short compared to (1'), which reduces the probability of electrons and/or holes being captured by defects on the wall during electron and/or hole movement, thereby minimizing luminescence loss, and emitting light due to electron-hole velocity imbalance It can also be advantageous to minimize losses. In addition, in the case of the second rod-type element 1', a strong optical path behavior occurs due to the circular rod-shaped structure, so the path of light generated by electron-holes resonates in the longitudinal direction, so that light is emitted from both ends in the longitudinal direction. On the other hand, in the case of the first rod-type device 1, the first rod-type device 1 emits light from the upper surface and the lower surface, so there is an advantage of expressing excellent front emission efficiency.

The micro-nanopin LED devices 108 and 109 provided in the light source of the present invention stack the conductive semiconductor layers 10 and 30 and the photoactive layer 20 in the thickness direction like the first rod-type device 1 described above, By implementing the length longer than the thickness, the photoactive layer 20 has a more improved light emitting area and at the same time the exposed photoactive layer 20 has a shallow etched depth because it is a rod type having a smaller thickness than the length even if the exposed photoactive layer 20 is slightly increased. It is advantageous to minimize or prevent a decrease in luminous efficiency due to defects because the possibility of occurrence of defects on the surface of the surface can be reduced.

Although the plane is shown as a rectangle in FIGS. 7 to 14, the present invention is not limited thereto, and it can be employed without limitation, from a general rectangular shape such as a rhombus, a parallelogram, and a trapezoid to an oval.

The micro-nanopin LED devices 101, 102, 103, 108, and 109 included in the light source according to an embodiment of the present invention have a length and a width of micro or nano units, for example, the length of the device may be 1000 ~ 10000 nm, and the width may be 100 to 3000 nm. In addition, the thickness may be 100 ~ 3000 nm. The length and width may have different standards depending on the shape of the plane. For example, if the plane is a rhombus or a parallelogram, one of the two diagonals may be the length and the other may be the width, and in the case of a trapezoid, the height, the upper side And a long side of the base may be a length, and a short side perpendicular to the long side may be a width. Alternatively, when the shape of the plane is an ellipse, the major axis of the ellipse may be the length and the minor axis may be the width.

At this time, the ratio of the length to the thickness of the micro-nanopin LED devices 101, 102, 103, 108, and 109 may be greater than 3:1, more preferably 6:1 or more, and thus the length may be greater than that of the electrode through the electric field. There are advantages to sorting. If the length to thickness ratio of the micro-nanopin LED devices 101, 102, 103, 108, and 109 is reduced to less than 3:1, it may be difficult to self-align the device on the lower electrode line 200 through an electric field, and the device may be a lower electrode Since it is not fixed on the line 200, there is a fear that an electrical contact short-circuit caused by a process defect may be caused. However, the ratio of the length to the thickness may be 15:1 or less, and through this, it may be advantageous to achieve the object of the present invention, such as optimization of a turning force that becomes self-aligned through an electric field.

In addition, the ratio of the length to the width in the plane may also be greater than 3:1, more preferably 6:1 or more. It has the advantage of being able to self-align. However, the ratio of the length to the width may be 15:1 or less, which may be advantageous for optimization of the turning force that is self-aligned through the electric field.

In addition, the width of the micro-nanopin LED devices 101, 102, 103, 108, 109 may be greater than or equal to the thickness, through which the micro-nanopin LED devices 101, 102, 103, 108, 109 are aligned on the lower electrode line 200 using an electric field. There is an advantage of being able to minimize or prevent alignment by lying on the side. If the micro-nanopin LED device is aligned on its side, even if the alignment and mounting are achieved in which one end and the other end contact the two adjacent lower electrodes, respectively, the photoactive layer exposed on the side of the device comes into contact with the lower electrode. An electrical short may occur, which may result in no light emission.

In addition, the micro-nanopin LED devices 101, 102, 103, 108, and 109 may be devices having different sizes at both ends in the longitudinal direction, for example, a rod-type device having a rectangular plane of an equilateral trapezoid whose length is greater than that of the upper and lower sides. , depending on the difference in length between the upper and lower sides, a difference between positive and negative charges accumulated at both ends of the device in the longitudinal direction may occur as a result.

In addition, on the lower surface of the first conductive semiconductor layer 10 of the micro-nanopin LED devices 101 , 102 , 103 , 108 and 109 , a protrusion 11 having a predetermined width and thickness may be formed in the longitudinal direction of the device. The protrusion 11 will be described in detail in the description of the manufacturing method to be described later, but after etching the wafer in the thickness direction, in order to remove the etched LED part on the wafer, from both sides of the lower end of the etched LED part to the central part inward It may be generated as a result of etching in the horizontal direction. The protrusion 11 may help to improve the extraction of the top emission of the micro-nanopin LED device 100 . In addition, the protrusion 11 is aligned so that when the micro-nanopin LED devices 101, 102, 103, 108, and 109 are self-aligned on the electrode, the electrode layer corresponding to the opposite surface opposite to the one surface of the device on which the protrusion 11 is formed is positioned on the lower electrode. can help you control Further, upper electrodes 301 and 302 may be formed on the first conductive semiconductor layer corresponding to one surface of the device on which the protrusion 11 is formed, and the protrusion 11 increases the contact area with the upper electrodes 301 and 302 to be formed. Accordingly, it may be advantageous to improve the mechanical bonding force between the electrodes and the micro-nanopin LED devices 101, 102, 103, 108, and 109.

At this time, the width of the protrusion 11 may be formed to be less than 50%, more preferably less than 30% of the width of the micro-nano-pin LED devices 101, 102, 103, 108, 109, through which the micro-nano-fins etched on the LED wafer Separation of the LED element portion may be easier. If the protrusion is formed exceeding 50% of the width of the micro-nanopin LED devices 101, 102, 103, 108, and 109, it may not be easy to separate the micro-nanopin LED device part etched on the LED wafer, and in a part other than the intended part Separation may occur, which may lower mass productivity, and there is a risk that the uniformity of the micro-nanopin LED devices produced in plurality may be lowered. Meanwhile, the width of the protrusion 11 may be formed to be 10% or more of the width of the micro-nanopin LED devices 101 , 102 , 103 , 108 and 109 . If the width of the protrusion is formed to be less than 10% of the width of the micro-nanopin LED device 101, 102, 103, 108, 109, separation on the LED wafer may be easy, but during side etching (FIG. 10 (g) / FIG. 10 (i)) , see Fig. 14(h) / Fig. 13(i)) Due to excessive etching, there is a risk that even a part of the first conductive semiconductor layer that should not be etched may be etched, and the effect according to the above-described protrusion 11 may not be expressed. there is. In addition, there is a risk of being damaged by the wet etching solution, and the micro-nanopin LED device dispersed in the high-risk etching solution having a strong basic property must be cleaned separately from the wet etching solution. On the other hand, the thickness of the protrusion 11 may have a thickness of 10 to 30% of the thickness of the first conductive semiconductor layer, and through this, the first conductive semiconductor layer may be formed to a desired thickness and quality, as described above. It may be more advantageous to express the effect through the protrusion 11 . Here, the thickness of the first conductive semiconductor layer means a thickness based on the lower surface of the first conductive semiconductor layer on which the protrusion is not formed.

As a specific example, the width of the protrusion 11 may be 50 to 300 nm, and the thickness may be 50 to 400 nm.

Hereinafter, each layer included in the micro-nanopin LED device 1,101,102,103,108,109 will be described.

The micro-nanofin LED devices 1 , 101 , 102 , 103 , 108 , and 109 include a first conductive semiconductor layer 10 and a second conductive semiconductor layer 30 . The conductive semiconductor layer used may be used without limitation if it is a conductive semiconductor layer employed in general LED devices used for lighting, displays, and the like. According to a preferred embodiment of the present invention, any one of the first conductive semiconductor layer 10 and the second conductive semiconductor layer 30 includes at least one n-type semiconductor layer, and the other conductive semiconductor layer is a p-type semiconductor. It may include at least one layer.

When the first conductive semiconductor layer 10 includes an n-type semiconductor layer, the n-type semiconductor layer is InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) For example, any one or more of a semiconductor material having a composition formula of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc. may be selected, and a first conductive dopant (eg, Si, Ge, Sn, etc.) may be doped. According to a preferred embodiment of the present invention, the thickness of the first conductive semiconductor layer 10 may be 1.5 to 5 μm, but is not limited thereto.

When the second conductive semiconductor layer 30 includes a p-type semiconductor layer, the p-type semiconductor layer is InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) For example, any one or more of a semiconductor material having a composition formula of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc. may be selected, and a second conductive dopant (eg, Mg) may be doped. According to a preferred embodiment of the present invention, the thickness of the second conductive semiconductor layer 30 may be 0.01 to 0.30 μm, but is not limited thereto.

According to an embodiment of the present invention, one of the first conductive semiconductor layer 10 and the second conductive semiconductor layer 30 includes a p-type GaN semiconductor layer, and the other includes an n-type GaN semiconductor layer. and the p-type GaN semiconductor layer may have a thickness of 10 to 350 nm, and the n-type GaN semiconductor layer may have a thickness of 100 to 3000 nm, through which holes injected into the p-type GaN semiconductor layer and the n-type GaN semiconductor layer are injected The moving distance of the electrons is shorter compared to the rod-type device in which the semiconductor layer and the photoactive layer are stacked in the longitudinal direction as shown in FIG. It is possible to minimize the light emission loss, and it may be advantageous to also minimize the light emission loss due to electron-hole velocity imbalance.

Next, the photoactive layer 20 is formed on the first conductive semiconductor layer 10 and may have a single or multiple quantum well structure. The photoactive layer 20 may be used without limitation if it is a photoactive layer included in a typical LED device used for lighting, display, and the like. A cladding layer (not shown) doped with a conductive dopant may be formed above and/or below the photoactive layer 20 , and the clad layer doped with the conductive dopant may be implemented as an AlGaN layer or an InAlGaN layer. In addition, a material such as AlGaN or AlInGaN may be used as the photoactive layer 20 . In the photoactive layer 20, when an electric field is applied to the device, electrons and holes that move from the conductive semiconductor layer positioned above and below the photoactive layer to the photoactive layer generate electron-hole pairs in the photoactive layer. will glow due to According to a preferred embodiment of the present invention, the thickness of the photoactive layer 20 may be 30 ~ 300 nm, but is not limited thereto.

In addition, according to an embodiment of the present invention, a protective film 50 formed on the side of the micro-nanopin LED device 100 to cover the exposed surface of the photoactive layer 20 may be further included. The protective film 50 is a film for protecting the exposed surface of the photoactive layer 20 , and covers at least all of the exposed surface of the photoactive layer 20 , for example, both sides of the micro-nanopin LED device 100 . And, it is possible to cover both the front end surface and the rear end surface. The protective film 50 is preferably silicon nitride (Si ₃ N ₄ ), silicon dioxide (SiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), zirconium oxide (ZrO ₂ ), yttrium oxide (Y ₂ O ₃ ) and titanium dioxide (TiO ₂ ), aluminum nitride (AlN), and gallium nitride (GaN) may include any one or more, more preferably made of the above components, but may be transparent, but However, the present invention is not limited thereto. According to a preferred embodiment of the present invention, the thickness of the protective film 50 may be 5 nm to 100 nm, but is not limited thereto.

Meanwhile, the above-described first conductive semiconductor layer 10 , photoactive layer 20 , and second conductive semiconductor layer 30 may be included as minimum components of the LED device, and other phosphor layers above and below each layer , an active layer, a semiconductor layer, a hole blocking layer and/or an electrode layer, and a polarization inducing layer may be further included.

As an example for this, as shown in FIGS. 7 to 9 , the micro-nanofin LED devices 108 and 109 may further include an electrode layer 40 on the second conductive semiconductor layer 30 . The electrode layer 40 may be used without limitation in the case of an electrode layer included in a typical LED device used for lighting, a display, and the like. The electrode layer 40 may be made of Cr, Ti, Al, Au, Ni, ITO, and an oxide or alloy thereof, either alone or in a mixture thereof, but preferably a transparent material to minimize light emission loss. An example may be the ITO. Also, the thickness of the electrode layer 40 may be 50 to 500 nm, but is not limited thereto.

The micro-nanopin LED device 108 as shown in FIGS. 7 to 9 may be manufactured by a manufacturing method described below, but is not limited thereto. Specifically, the micro-nanopin LED device 108 is (L1) preparing an LED wafer in which a first conductive semiconductor layer, a photoactive layer and a second conductive semiconductor layer are sequentially stacked on a substrate, (L2) the LED wafer forming an electrode layer on the second conductive semiconductor layer of (L3) an LED wafer such that each device has a plane having a length and width of nano or micro size, and a thickness perpendicular to the plane is smaller than the length etching in the thickness direction to form a plurality of micro-nanopin LED pillars, and (L4) separating the plurality of micro-nanopin LED pillars from the substrate.

When this is explained with reference to FIG. 10 , first, as step (L1) of the present invention, the first conductive semiconductor layer 10 , the photoactive layer 20 and the second conductive semiconductor layer 30 are sequentially formed on a substrate (not shown). A step of preparing the stacked LED wafer 51 may be performed.

First, the thickness of the first conductive semiconductor layer 10 in the LED wafer 51 may be thicker than the thickness of the first conductive semiconductor layer 10 in the aforementioned micro-nanofin LED device 100 . In addition, each layer in the LED wafer 51 may have a c-plane crystal structure.

In addition, the LED wafer 51 may have been subjected to a cleaning process, and the present invention is not particularly limited thereto since the cleaning process may appropriately employ a conventional wafer cleaning solution and cleaning process. The cleaning solution may be, for example, isopropyl alcohol, acetone and hydrochloric acid, but is not limited thereto.

Next, as a step (L2), as shown in (b) of FIG. 10 , a step of forming the electrode layer 40 on the second conductive semiconductor layer 30 of the LED wafer 51 may be performed. The electrode layer 40 may be formed through a conventional method of forming an electrode on a semiconductor layer, and may be formed by, for example, deposition through sputtering. The material of the electrode layer 40 may be, for example, ITO as described above, and may be formed to a thickness of about 150 nm. The electrode layer 40 may be further subjected to a rapid thermal annealing process after the deposition process. For example, the electrode layer 40 may be processed at 600° C. for 10 minutes, but may be appropriately adjusted in consideration of the thickness and material of the electrode layer, so the present invention is It does not specifically limit with respect to this.

Next, as step (L3) of the present invention, each device has a plane having a length and width of nano or micro size, and the LED wafer 51 is formed in the thickness direction so that the thickness perpendicular to the plane is smaller than the length. Etching to form a plurality of micro-nanopin LED pillars 52 may be performed.

The step (L3) is specifically L3-1) forming a mask pattern layer 61 on the upper surface of the electrode layer 40 so that each device is a plane having a predetermined shape having a length and width of nano or micro size. (FIG. 10(c)), L3-2) forming a plurality of micro-nanofin LED pillars 52 by etching the first conductive semiconductor layer 10 to a partial thickness in the thickness direction along the pattern (FIG. 10) (d)), L3-3) forming an insulating film 62 to cover the exposed side of the micro-nanopin LED pillar 52 (FIG. 10(e)), 3-4) adjacent micro - Part of the insulating film 62 formed on the first conductive semiconductor layer 10 so that the top surface (A in FIG. 10(f)) of the first conductive semiconductor layer 10 between the nanofin LED pillars 52 is exposed Removing (FIG. 10(f)), L3-5) The first conductive semiconductor layer 10 is further etched in the thickness direction through the exposed upper portion of the first conductive semiconductor layer (A in FIG. 10(f)) Forming a portion of the first conductive semiconductor layer (B of FIG. 10(g)) with the side exposed by a predetermined thickness below the first conductive semiconductor layer of the micro-nanofin LED pillar on which the insulating film 62 is formed (FIG. 10(g)), L3-6) etching the portion of the first conductive semiconductor layer with side surfaces exposed (B of FIG. 10(g)) from both sides toward the center (FIG. 10(i)), and L3- 7) removing the mask pattern layer 61 disposed on the electrode layer 40 and the insulating film 62 covering the side surfaces (FIG. 10(j)).

First, as a step L3-1), a step of forming a mask pattern layer 61 on the upper surface of the electrode layer 40 so that each element is a plane having a predetermined shape having a length and width of nano or micro size (FIG. 10 ( c)) can be carried out.

The mask pattern layer 61 is a layer patterned to have a desired planar shape of the implemented LED device, and may be formed of a known method and material used for etching an LED wafer. The mask pattern layer 61 may be, for example, a SiO ₂ hard mask pattern layer. Briefly describing a method of forming it, forming an unpatterned SiO ₂ hard mask layer on the electrode layer 40, the SiO ₂ Forming a metal layer on the hard mask layer, forming a predetermined pattern on the metal layer, etching the metal layer and the SiO ₂ hard mask layer along the pattern, and removing the metal layer. can

The mask layer is a layer from which the mask pattern layer 61 is derived. For example, SiO ₂ may be formed through deposition. The thickness of the mask layer may be formed to be 0.5 ~ 3㎛, for example, may be formed of 1.2㎛. In addition, the metal layer may be, for example, an aluminum layer, and the aluminum layer may be formed through deposition. The predetermined pattern formed on the formed metal layer is for realizing the pattern of the mask pattern layer, and may be a pattern formed by a conventional method. For example, the pattern may be formed through photolithography using a photosensitive material or may be a pattern formed through a known nanoimprinting method, laser interference lithography, electron beam lithography, or the like. Thereafter, the metal layer and the SiO ₂ hard mask layer are etched along the formed pattern. For example, the metal layer is an inductively coupled plasma (ICP), SiO ₂ hard mask layer or an imprinted polymer layer is RIE. It can be etched using a dry etching method such as (reactive ion etching).

Next, the etched SiO ₂ metal layer present on the hard mask layer, other photosensitive material layers, or a step of removing the remaining polymer layer according to the imprint method may be performed. The removal may be performed through a conventional wet etching or dry etching method depending on the material, and detailed description thereof will be omitted in the present invention.

10 (c) is a plan view of the SiO ₂ hard mask layer 61 is patterned on the electrode layer 40, and then the thickness of the LED wafer 51 along the pattern as shown in FIG. 5 (d) in step 3-2). The step of forming a plurality of micro-nanofin LED pillars 52 by etching the first conductive semiconductor layer 10 to a partial thickness in the direction may be performed. The etching may be performed through a conventional dry etching method such as ICP.

Thereafter, in step 3-3), as shown in FIG. 10( e ), a step of forming an insulating film 62 to cover the exposed side surface of the micro-nano-fin LED pillar 52 may be performed. The insulating film 62 coated on the side surface may be formed through vapor deposition, and the material thereof may be, for example, SiO ₂ , but is not limited thereto. The insulating film 62 functions as a side mask layer, and specifically, as shown in FIG. The micro-nanopin LED pillar 52 remains on the side, and functions to prevent damage due to the etching process. The insulating film 62 may have a thickness of 100 to 600 nm, but is not limited thereto.

Next, as step 3-4), as shown in FIG. 10(f), the upper surface of the first conductive semiconductor layer 10 (A in FIG. 10(f)) between the adjacent micro-nanopin LED pillars 52 is exposed. A step of removing a portion of the insulating film 62 formed on the first conductive semiconductor layer 10 may be performed. The removal of the insulating film 62 may be performed through an appropriate etching method in consideration of the material, and the insulating film 62 of SiO ₂ may be removed through dry etching such as RIE.

Next, as a step L3-5), the first conductive semiconductor layer 10 is further etched in the thickness direction through the exposed upper portion of the first conductive semiconductor layer (A in FIG. to form a portion of the first conductive semiconductor layer (B in Fig. 10(g)) with the side exposed by a predetermined thickness below the first conductive semiconductor layer of the micro-nanofin LED pillar on which the insulating film 62 is formed. carry out As described above, the exposed portion B of the first conductive semiconductor layer 10 is a portion on which side etching is performed in a direction parallel to the substrate in a step to be described later. The process of further etching the first conductive semiconductor layer 10 in the thickness direction may be performed by, for example, a dry etching method such as ICP.

After that, as a step L3-6), as shown in FIG. 10(i), a step of side-etching the portion of the first conductive semiconductor layer (B in FIG. . The side etching may be performed through wet etching. For example, the wet etching may be performed at a temperature of 60 to 100° C. using a tetramethylammonium hydroxide (TMAH) solution.

Thereafter, after wet etching in the lateral direction is performed, the mask pattern layer 61 disposed on the electrode layer 40 and the insulating film 62 covering the side surfaces are removed in step L3-7) as shown in FIG. 10( j ). steps can be performed. Both the material of the mask pattern layer 61 and the insulating film 62 disposed thereon may be SiO ₂ , and may be removed by wet etching. For example, the wet etching may be performed using a buffer oxide etchant (BOE).

According to an embodiment of the present invention, as a step (L5) between steps (L3) and (L4) described above, a step of forming a protective film 50 on the side of a plurality of micro-nanopin LED pillars is further performed can do. The protective film 50 may be formed by, for example, deposition as shown in FIG. 10(k), and may have a thickness of 10 to 100 nm, for example 40 nm, and the material may be, for example, alumina. When using alumina, an ALD (atomic layer deposition) method may be used as an example of the deposition. In addition, in order to form the deposited protective film 50 only on the side surfaces of the plurality of micro-nanopin LED pillars, the protective film 50 located on the remaining portions except for the side surfaces is removed by etching, for example, dry etching through ICP. can be On the other hand, although FIG. 10(l) shows that the protective film 50 surrounds the entire side surface, the protective film 50 may not be formed on all or part of the remaining portions except for the photoactive layer on the side surface. make it clear

Next, as a step (L4) according to the present invention, as shown in FIG. 10(m), a step of separating the plurality of micro-nanopin LED pillars from the substrate may be performed. The separation may be separation using a cutting device or an adhesive film, and the present invention is not particularly limited thereto.

On the other hand, unlike the micro-nanopin LED device 108 shown in FIGS. 7 to 9 described above, the micro-nanopin LED device 109 as shown in FIGS. 11 to 13 has a second conductive semiconductor layer 30 ), a first polarization inducing layer 41 is formed on one side in the longitudinal direction of the device, and a second polarization inducing layer 42 having an electrical polarity different from that of the first polarization inducing layer 41 is formed on the other end. An induction layer 43 may be further included. The micro-nano-fin device 109 shown in FIGS. 11 to 13 has an electrode layer 40 on the second conductive semiconductor layer 30 in comparison with the micro-nano-fin device 108 shown in FIGS. 7 to 9 . Instead, there is a difference in that the polarization inducing layer 43 is formed.

The polarization inducing layer 43 is a layer that facilitates self-alignment by an electric field by allowing both ends to have different electrical polarities in the longitudinal direction of the device. can be combined with The polarization inducing layer 43 may have a first polarization inducing layer 41 disposed at one end along the device longitudinal direction, and a second polarization inducing layer 42 disposed at the other end thereof, and the first polarization inducing layer 43 may be disposed at the other end thereof. The layer 41 and the second polarization inducing layer 42 may have different electrical polarities. For example, the first polarization inducing layer 41 may be ITO, and the second polarization inducing layer 42 may be a metal or a semiconductor. In addition, the thickness of the polarization inducing layer 43 may be 50 ~ 500 nm, but is not limited thereto. The first polarization inducing layer 41 and the second polarization inducing layer 42 may be disposed in the same area by dividing the upper surface of the second conductive semiconductor layer 30 in two, but is not limited thereto. Either one of the inducing layer 41 and the second polarization inducing layer 42 may be disposed to have a larger area.

The polarization inducing layer 43 is a polarization induction patterned so that regions having different electrical polarities are adjacent to each other on the second conductive semiconductor layer 30 of the LED wafer 51 as a (M2) step instead of the (L2) step described above. It may be provided by performing the step of forming the layer 43 .

In more detail, step (M2) is described with reference to FIG. 14, step (M2) is M 2-1) first polarization induction on the second conductive semiconductor layer 30 as shown in FIG. 14(b). Forming the layer 41, M2-2) etching the first polarization inducing layer 41 in the thickness direction along a predetermined pattern, as shown in FIGS. 14(c1) and 14(c2) Similarly, M2-3) may be performed including the step of forming the second polarization inducing layer 42 on the etched intaglio portion.

First, as step M2-1), a step of forming the first polarization inducing layer 41 on the second conductive semiconductor layer 30 may be performed. The first polarization inducing layer 41 may be a conventional electrode layer formed on a semiconductor layer, and may be, for example, Cr, Ti, Ni, Au, ITO, etc., preferably ITO in terms of transparency. The first polarization inducing layer 41 may be formed through a conventional method of forming an electrode, and may be formed by, for example, deposition through sputtering. For example, when ITO is used, it may be deposited to a thickness of about 150 nm, and may be further subjected to a rapid thermal annealing process after the deposition process. Since it can be appropriately adjusted in consideration of the thickness and material of the layer 41, the present invention is not particularly limited thereto.

Next, as a step M2-2), a step of etching the first polarization inducing layer 41 in a thickness direction according to a predetermined pattern is performed. This step is a step of preparing a point where the second polarization inducing layer 42 to be described later is to be formed, taking into account the area ratio and arrangement of the first polarization inducing layer 41 and the second polarization inducing layer 42 in the device. Thus, the pattern can be formed. For example, the pattern may be formed such that the first polarization-inducing layer 41 and the second polarization-inducing layer 42 are alternately arranged side by side as shown in FIG. 14(d). Since the pattern can be formed by appropriately applying a conventional photolithography method or a nanoimprinting method, a detailed description thereof will be omitted in the present invention.

The etching may be performed by employing an appropriate known etching method in consideration of the selected material of the first polarization inducing layer 41 . For example, when the first polarization inducing layer 41 is ITO, it may be etched through wet etching. At this time, the etched thickness may be etched up to the upper surface of the second conductive semiconductor layer 30 , that is, all of the ITO may be etched in the thickness direction, but is not limited thereto. Specifically, only a portion of the ITO is etched in the thickness direction, and the second polarization inducing layer 42 may be formed on the etched portion of the intaglio, in this case the first polarization inducing layer 41 and the second polarization inducing layer 42 which are ITO. ), it is pointed out that one end of the upper layer of the device may be formed with a stacked two-layer structure.

Next, as a step M2-3), a step M2-3) of forming the second polarization inducing layer 42 on the etched intaglio portion may be performed. The second polarization-inducing layer 42 is a material having a different electrical polarity from that of the selected first polarization-inducing layer 41, and can be used without limitation in the case of a material used in a conventional LED, and may be, for example, a metal or a semiconductor. , specifically nickel or chromium. As the method for forming these, a known method may be appropriately employed according to the material such as vapor deposition, so the present invention is not particularly limited thereto.

On the other hand, in the micro-nanopin LED devices 101, 102, 103, both ends of the device are in contact on two adjacent lower electrodes 211/212, 213/214, 215/216 of the lower electrode line 200 as shown in FIGS. 3 and 4 . However, one surface in the thickness direction, that is, the first conductive semiconductor layer or the second conductive semiconductor layer may be disposed to contact the lower electrodes 211 , 212 , 213 , 214 , 215 and 216 . In addition, when the electrode layer 40 or the polarization inducing layer 43 is further included, as shown in FIG. 5 , the first micro-nanopin LED device 108 has the electrode layer 40 on the base substrate 402 . One surface of the first conductive semiconductor layer, which is disposed to contact the upper surface of the lower electrode line formed in the ? It may be arranged to contact a line (not shown).

On the other hand, in the case of the second micro-nanopin LED device 109 further including the polarization inducing layer 43 , the polarization inducing layer 43 may be disposed on the upper surface of the lower electrode line. However, when a plurality of second micro-nano-pin LED devices 109 are included, the polarization-inducing layers 43 of all second micro-nano-pin LED devices 109 are disposed so as to be in contact with the upper surface of the lower electrode line. No, because of the polarization inducing layer 43, the polarization inducing layer 43 can be arranged in contact with the lower electrode line with a high probability compared to the first micro-nano-fin LED device 108 . On the other hand, the first micro-nano pin LED device 108 and the second micro-nano pin LED device 109 have protrusions (11 in FIG. 8, 11 in FIG. 12) on the lower surface of the first conductive semiconductor layer as described above. ), the probability that one side of the second conductive semiconductor layer corresponding to the opposite surface on which the protrusion 11 is formed is aligned with the lower electrode line 200 due to the protrusion 11 may increase and, through this, alignment with respect to the thickness direction of a plurality of LED elements in the micro-nanopin LED electrode assembly 1000 may be improved.

On the other hand, according to an embodiment of the present invention, as shown in FIG. 4 , the micro-nanopin LED elements 101, 102, 103 disposed on the lower electrode line 200 to reduce the contact resistance between the lower electrode lines 200. It may further include a conductive metal layer 501 connecting the conductive semiconductor layer of the micro-nanopin LED devices 101 , 102 , 103 and the lower electrode line 200 in contact with the conductive metal layer 501 . The conductive metal layer 501 may be a conductive metal layer such as silver, aluminum, or gold, and may be formed to have a thickness of, for example, about 10 nm.

In addition, an insulating layer 601 may be further included in a space between the micro-nanopin LED elements 101 , 102 , 103 self-aligned on the lower electrode line 200 and the upper electrode line 300 in electrical contact with the upper portion. . The insulating layer 601 prevents electrical contact between the two electrode lines 200 and 300 facing vertically, and performs a function of more easily implementing the upper electrode line 300 . The insulating layer 601 may be used without limitation if it is an insulating material commonly used in electrical and electronic components.

The unit area that can independently drive the above-described micro-nanopin LED electrode assemblies (1000, 1001, 1002, 1003) is, for example, 1 μm ² to 100 cm ² , and more preferably 10 μm ² to It may be 100 mm ² , but is not limited thereto.

In addition, the above-described micro-nanopin LED electrode assembly (1000, 1001, 1002, 1003) may be provided in one or two or more in the light source (2000, 2000', 3000). At this time, the single micro-nano-pin LED electrode assembly (1000, 1001, 1002, 1003) provided in the micro-nano-pin LED element (1,101, 102, 103, 108, 109) may be composed of an element emitting any one color, the light color is an example It may be any one of UV, blue, green, yellow, amber, and red. On the other hand, when two or more micro-nanopin LED electrode assemblies 1001, 1002, 1003 are provided in the light sources 2000' and 3000, and they are configured to be driven independently, the light source is implemented to emit various types of light colors and such a light source may be employed in a display such as LCD or OLED.

On the other hand, the micro-nanopin LED electrode assembly (1000, 1001, 1002, 10003) according to an embodiment of the present invention described above includes (1) a plurality of lower electrodes (211, 212, 213, 214, 215, 216) spaced apart in the horizontal direction at a predetermined interval. On the lower electrode line 200 including the first conductive semiconductor layer ( 10), the photoactive layer 20 and the second conductive semiconductor layer 30 are sequentially stacked micro-nanopin LED devices (1,101, 102, 103, 108, 109) step of introducing a solution containing a plurality of, (2) the lower electrode line ( 200) in the solution by applying an assembly voltage to the first conductive semiconductor layer 10 or the second conductive semiconductor layer 4,30 (or electrode layer 40, or polarization of the micro-nanopin LED device 1,101,102,103,108,109) Self-aligning the inductive layer 43) to contact at least two adjacent lower electrodes 211/212, 213/214, 215/216, and (3) self-aligning a plurality of micro-nanopin LED devices 1,101,102,103,108,109 It may be manufactured including the step of forming the upper electrode line 300 on the .

First, as step (1), a plurality of micro-nanopin LED devices (1,101,102,103,108,109) on a lower electrode line 200 including a plurality of lower electrodes 211,212,213,214,215,216 spaced apart in the horizontal direction at a predetermined interval. Steps to insert

A solution containing a plurality of micro-nanopin LED devices (1,101,102,103,108,109) may include a plurality of micro-nanopin LED devices (1,101,102,103,108,109) and a solvent. The solvent has a function of dispersing the micro-nanopin LED device 1,101,102,103,108,109 as well as a function of moving the micro-nanopin LED device 1,101,102,103,108,109 to facilitate self-alignment on the lower electrode 211,212,213,214,215,216. carry out In addition, the solution may be in the form of ink or paste, and the solution may be injected onto the lower electrode line 200 using, for example, inkjet. On the other hand, although step (1) has been described as the LED device is put in a solution mixed with the solvent, the LED device is first put on the lower electrode line, and then the solvent is added. Note that it is included in

The solvent may be any one or more selected from the group consisting of acetone, water, alcohol and toluene, and more preferably acetone. However, the type of solvent is not limited to the above description, and any solvent that can evaporate well without physically and chemically affecting the micro-nanopin LED device may be used without limitation. Preferably, the micro-nanopin LED device may be added in an amount of 0.001 to 100 parts by weight based on 100 parts by weight of the solvent. If the amount is less than 0.001 parts by weight, the number of micro-nanopin LED elements connected to the lower electrode may be small, making it difficult for the micro-nanopin LED electrode assembly to function normally. To overcome this, the solution must be added dropwise several times. There may be a problem, and when it exceeds 100 parts by weight, there may be a problem that the alignment of individual micro-nanopin LED devices may be disturbed.

Next, as a step (2), the first conductive semiconductor layer 10 or the second conductive semiconductor layer ( 30) (or self-aligning the electrode layer 40 or the polarization inducing layer 43 to contact at least two adjacent lower electrodes 211/212, 213/214, 215/216).

In step (2), charges are induced in the micro-nanopin LED devices 1,101, 102, 103, 108, 109 by induction of an electric field formed by the potential difference between the lower electrodes 211/212, 213/214, 215/216 to which the micro-nanopin LED devices are adjacent. and self-aligning the micro-nanopin LED devices (1,101,102,103,108,109) by inducing them to have different charges toward both ends in the longitudinal direction around the center of the center of the two lower electrodes among the plurality of lower electrodes of the lower electrode line. Power is applied so that a potential difference is formed between any one and the other or between a first group consisting of two or more adjacent lower electrodes and a second group of two or more adjacent lower electrodes adjacent to the first group. can At this time, the strength, type, etc. of the applied assembly voltage are inserted into Korean Patent Application Nos. 10-2013-0080412, 10-2016-0092737, 10-2016-0073572, etc. by the inventor of the present invention as reference. can be

Next, as step (3) of the present invention, (3) a step of forming the upper electrode line 300 on a plurality of self-aligned micro-nanopin LED devices 1,101,102,103,108,109 is performed. The upper electrode line 300 may be implemented by depositing an electrode material after patterning the electrode line using known photolithography or by dry and/or wet etching after depositing the electrode material. At this time, since the electrode material is the same as the description of the electrode material of the lower electrode line described above, it will be omitted below.

On the other hand, between the steps (2) and (3) described above, each of the micro-nanopin LED devices 101, 102, 103 in contact with the lower electrode line 200 connects the first conductive semiconductor layer or electrode layer and the lower electrode line. Forming a metal layer 501 for current conduction and forming an insulating layer 601 on the lower electrode line 200 so as not to cover the upper surfaces of the self-aligned micro-nanopin LED devices 101, 102, 103. can

The conduction-only metal layer 501 may be manufactured by patterning a line on which the current-conducting metal layer is to be deposited by applying a photolithography process using a photosensitive material and then depositing the current-conducting metal layer, or by etching the deposited metal layer after patterning. there is. The process may be performed by appropriately employing a known method, and Korean Patent Application No. 10-2016-0181410 by the inventor of the present invention may be incorporated as a reference.

After forming the conductive metal layer 501, the self-aligned micro-nanopin LED elements 101, 102, 103 are not covered so that the upper surface is not covered, and the insulating layer 601 on the lower electrode line 200 can be performed. . The insulating layer 601 may be formed through deposition of a known insulating material. For example, an insulating material such as SiO ₂ and SiN _x is deposited through a PECVD method, or an insulating material such as AlN or GaN is formed by a MOCVD method. Alternatively, an insulating material such as Al ₂ O, HfO ₂ , or ZrO ₂ may be deposited through an ALD method. On the other hand, the insulating layer 601 can be formed so as not to cover the upper surfaces of the self-aligned micro-nanopin LED devices 101, 102, 103. For this, an insulating layer is formed through deposition to a thickness not to cover the upper surface. Alternatively, after deposition to cover the upper surface, dry etching may be performed until the upper surface of the device is exposed.

On the other hand, the light sources 2000, 2000 ', 3000 may include one or two or more of the above-described micro-nanopin LED electrode assemblies 1000, 1001, 1002, 1003. In addition, when two or more micro-nanopin LED electrode assemblies (1000, 1001, 1002, 1003) are included, their arrangement is pre-arranged in any one direction as shown in FIG. 2a or in a plane arrangement as shown in FIG. 2b It may be arranged with , or may be arranged randomly otherwise.

Also, the light sources 2000 , 2000 ′, and 3000 may further include a color conversion material so that the light emitted from the light source has a specific wavelength. The color conversion material is excited by the light emitted from the micro-nanopin LED devices 1,101, 102, 103, 108, and 109 to emit light having a specific wavelength. In addition, the color conversion material may be provided in the buried layer 1200 inside the support 1100 of FIG. 1 or may be provided in the coating layers 1200 ′ and 1300 of FIGS. 2A and 2B .

In addition, the micro-nanopin LED devices 1, 101, 102, 103, 108, and 109 may be devices that emit any one light color among UV, blue, green, yellow, amber, and red. can For example, in the case of a device that emits UV light, the color conversion material may be any one or more of blue, cyan, yellow, green, amber, and red, through which a monochromatic light source or a white light source of any one color may be implemented. In the case of a device that emits UV as an example of realizing a white light source, the color conversion material may be a mixture of any one of blue/yellow, red/cyan, blue/green/red, and blue/green/amber/red. And through this, a white light source can be realized. In addition, in the case of a blue light-emitting device, the color conversion material may be any one or more of yellow, cyan, green, amber, and red, and a monochromatic light source or a white light source may be implemented through this. As an example of realizing the white light source, any two or more colors can be combined, and specifically, a mixture of any one of blue/yellow, red/cyan, blue/green/red, and blue/green/amber/red A white light source can be realized through combination.

On the other hand, the color conversion material may be a known phosphor or quantum dot used for lighting, display, etc., the present invention is not particularly limited with respect to the specific type thereof.

The above-described light sources 2000 , 2000 ′, and 3000 may constitute electrical and electronic components or devices by themselves or in combination with other known configurations. As an example, the known configuration includes an input unit for receiving signals necessary for the micro-nanopin LED electrode assembly (1000,1001,1002,1003) to operate, and a micro-nanopin LED electrode assembly (1000,1001,1002,1003) It may be a housing for packaging a heat dissipation unit such as a heat sink for transferring heat generated during driving to the outside, and a light source with other components.

In addition, the light sources (2000, 2000', 3000) may be employed in various electrical and electronic devices that require a light emitting body, for example, various LED lights for home/vehicle use, displays, medical devices, beauty devices, and various optical devices. there is. On the other hand, as shown in FIG. 15 , the medical device may be an optogenetic LED light source 4000 , such as emitting light of a predetermined wavelength to the brain to activate a neural network of the corresponding region. The optogenetic LED light source 4000 may include a plurality of micro-nanopin LED electrode assemblies 1000 on the support 1100"'. In addition, the beauty device is one example as shown in FIG. It may be a skin beauty LED mask 5000, and a plurality of micro-nanopin LED electrode assemblies 1000 may be provided on the inner surface of the mask support 3100 to which the skin comes into contact.

Although one embodiment of the present invention has been described above, the spirit of the present invention is not limited to the embodiments presented herein, and those skilled in the art who understand the spirit of the present invention can add components within the scope of the same spirit. , changes, deletions, additions, etc. may easily suggest other embodiments, but this will also fall within the scope of the present invention.

1,101,102,103,108,109: micro-nanopin LED device
10: first conductive semiconductor layer 20: photoactive layer
20: second conductive semiconductor layer 40: electrode layer
43: polarization inducing layer 50: protective film
211,212,213,214: lower electrode 200: lower electrode line
301,302: upper electrode 300: upper electrode line
1000,1001,1002,1003: Micro-nanopin LED device electrode assembly
1100,1100',1100",1100"': support
2000,2000',3000,4000,5000: light source

Claims (15)

It includes a support and a micro-nanopin LED electrode assembly provided on the support, wherein the micro-nanopin LED electrode assembly is disposed on the support and includes a plurality of lower electrodes spaced apart in a horizontal direction at a predetermined interval a lower electrode line;
It has a plane having a length and width of nano or micro size, a thickness perpendicular to the plane is smaller than the length, and a first conductive semiconductor layer, a photoactive layer and a second conductive semiconductor layer are stacked in the thickness direction, the first a plurality of micro-nanopin LED devices disposed on at least two of the lower electrodes adjacent to the conductive semiconductor layer or the second conductive semiconductor layer; and
and an upper electrode line disposed on the second conductive semiconductor layer or the first conductive semiconductor layer of the plurality of micro-nanopin LED devices. According to claim 1,
The support has a flat plate shape, and the micro-light source further comprising a coating layer having a color conversion material excited by light irradiated from the micro-nanopin LED electrode assembly on at least one surface of the support. According to claim 1,
The support has a cup shape having an accommodating space therein, the micro-nanopin LED electrode assembly is provided in the accommodating space, and the accommodating space is a color excited by light irradiated from the micro-nanopin LED electrode assembly A light source further comprising a conversion material. According to claim 1,
A light source comprising 2 to 100,000 micro-nanopin LED devices per unit area of 100 x 100 μm ² of the micro-nanopin LED electrode assembly. According to claim 1,
The micro-nanopin LED device is a light source having a length of 1000 to 10000 nm and a thickness of 100 to 3000 nm. According to claim 1,
The ratio of the length to the thickness of the micro-nanopin LED device is 3:1 or more. According to claim 1,
On the second conductive semiconductor layer of the micro-nanopin LED device, an electrode layer or a first polarization inducing layer is formed on one side in the longitudinal direction of the device, and a second polarization having a different electrical polarity from the first polarization inducing layer on the other end side. A light source further comprising a polarization inducing layer formed with an inducing layer. According to claim 1,
On the lower surface of the first conductive semiconductor layer of the micro-nanopin LED device, a protrusion having a predetermined width and thickness is formed in the longitudinal direction of the device, and the width of the protrusion is 50% or less of the width of the micro-nanopin LED device. formed light source. According to claim 1,
The light emission area of the micro-nanopin LED device is greater than twice the area of the micro-nanopin LED device longitudinal section. According to claim 1,
One of the first conductive semiconductor layer and the second conductive semiconductor layer includes a p-type GaN semiconductor layer, and the other includes an n-type GaN semiconductor layer,
The p-type GaN semiconductor layer has a thickness of 10-350 nm, the n-type GaN semiconductor layer has a thickness of 100-3000 nm, and the photoactive layer has a thickness of 30-200 nm. 4. The method of claim 2 or 3,
The micro-nanopin LED device is a light source that is a device that emits any one type of light among UV, blue, green, yellow, amber, and red. The method of claim 1,
A plurality of micro-nanopin LED electrode assemblies are provided so as to emit at least two light colors of blue, green, yellow, amber and red, and each micro-nanopin LED electrode assembly has a micro- that emits substantially the same light color. A light source including a nanofin LED device. 4. The method of claim 2 or 3,
When the micro-nano pin LED electrode assembly includes a micro-nano pin LED device irradiating UV, the color conversion material includes at least one of blue, cyan, yellow, green, amber and red, so that the light source is white is implemented to emit light, or
When the micro-nanopin LED electrode assembly is a micro-nanopin LED device that emits blue light, the color conversion material includes any one or more of yellow, cyan, green, amber and red so that the light source emits white light Light source characterized in that it becomes. According to claim 1,
A light source further comprising a base substrate between the support and the lower electrode line. A device comprising a light source according to claim 1 .

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