KR102378721B1 - Plasma atomic layer deposition apparatus with iCVD Process) - Google Patents

Abstract

The present invention relates to a plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator that enables both a plasma ALD process and an iCVD process with a single device, comprising: a chamber having an accommodating space therein to accommodate a substrate; a susceptor supporting the substrate; a first shower head unit installed inside the chamber to receive a first gas for atomic layer deposition using a first supply pipe and uniformly supply it to the substrate in the ALD mode, the first shower head having a plurality of first discharge units; The second gas for atomic layer deposition is supplied using a second supply pipe and is installed below the first shower head so as to be uniformly supplied to the substrate, and the first gas is not mixed with the first gas. a second shower head in which a plurality of second discharging units are formed between the discharging units; and a heater installed in the exhaust space of the first exhaust unit to thermally activate the chemical vapor deposition initiator or deposition gas supplied through the first supply pipe in the iCVD mode.

Description

A plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator {Plasma atomic layer deposition apparatus with iCVD Process}

The present invention relates to a plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator, and more particularly, plasma atomic layer deposition capable of chemical vapor deposition using an initiator that enables both a plasma ALD process and an iCVD process with a single equipment. It's about the device.

Due to the development of semiconductor integration technology, the process of depositing a high-purity, high-quality thin film has become an important part of the semiconductor manufacturing process. Representative methods of thin film formation include a chemical vapor deposition (CVD) method and a physical vapor deposition (PVD) method. A physical vapor deposition method such as a sputtering method cannot be used to form a film of a uniform thickness on an uneven surface because the step coverage of the formed thin film is poor.

Chemical vapor deposition is a method in which gaseous substances react on the surface of a heated substrate, and a compound produced by the reaction is deposited on the surface of the substrate. Compared to the physical vapor deposition method, the chemical vapor deposition method is widely applied because it has better step coverage, less damage to the substrate on which the thin film is deposited, low deposition cost of the thin film, and can mass-produce thin films.

However, as the degree of integration of semiconductor devices has recently improved to sub-micron units, a uniform thickness of sub-micron units can be obtained on a wafer substrate only by the conventional chemical vapor deposition method, or excellent step coverage is achieved. It is difficult to obtain a material film having a constant composition regardless of location when there is a step such as a sub-micron-sized contact hole, via, or trench on the wafer substrate. have experienced

Therefore, unlike the conventional chemical vapor deposition method in which all process gases are simultaneously injected, two or more process gases necessary to obtain a desired thin film are sequentially divided and supplied according to time so that they do not meet in the gas phase, but these supply cycles are periodically repeated to form a thin film. A time division atomic layer deposition (ALD) method is being applied as a new thin film formation method.

In addition, space division method atomic layer deposition in which two or more process gases are supplied in different spaces so that they do not meet in the vapor phase and the substrate is moved to different spaces is also applied.

Meanwhile, recently, initiated chemical vapor deposition (iCVD) using an initiator, which is one of chemical vapor deposition methods, has been in the spotlight. The iCVD process uses a chain polymerization reaction using free radicals, which is well known in the liquid phase process. The iCVD process is a process of depositing a polymer thin film on the surface of a substrate by vaporizing an initiator and a monomer to cause a polymer reaction in a vapor phase. The polymerization reaction does not occur when the initiator and the monomer are simply mixed, but when the initiator is decomposed by a high-temperature filament located in the gas phase reactor to generate radicals, the monomer is activated and a chain polymerization reaction occurs.

The chemical vapor deposition method (iCVD) using an initiator can produce a thin film with higher purity than the conventional chemical vapor deposition method because the organic solvent causes a reaction using only monomers and radicals without other additives.

On the other hand, depending on the type of substrate, both an ALD film using a plasma atomic layer deposition process and an iCVD film using a chemical vapor deposition process using an initiator are required, or a plasma atomic layer deposition process and a chemical vapor deposition process using an initiator are required in one equipment. The need to perform all vapor deposition processes is emerging.

However, conventionally, since plasma atomic layer deposition equipment and chemical vapor deposition equipment using initiators are manufactured separately from each other, it is cumbersome to transfer a substrate between the two equipment, or both equipment must be installed, so space and cost are required. There were these greatly wasted problems.

The present invention is intended to solve various problems including the above problems, and since both the plasma ALD process and the iCVD process can be performed with a single equipment, it is possible to significantly reduce the substrate transfer time, equipment installation space, and equipment purchase cost. In a low-temperature environment, it is possible to prevent damage to the iCVD film or the formation of a filament by using remote plasma. chemical vapor deposition using an initiator that prevents mixing of the reaction gas and the source gas using the It aims to provide a possible plasma atomic layer deposition apparatus. However, these problems are exemplary, and the scope of the present invention is not limited thereto.

A plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator according to an aspect of the present invention for solving the above problems includes: a chamber having an accommodating space therein to accommodate a substrate; a susceptor supporting the substrate; a first shower head unit installed inside the chamber to receive a first gas for atomic layer deposition using a first supply pipe and uniformly supply it to the substrate in the ALD mode, the first shower head having a plurality of first discharge units; The second gas for atomic layer deposition is supplied using a second supply pipe and is installed under the first shower head so as to be uniformly supplied to the substrate, and the first gas is not mixed with the first gas. a second shower head in which a plurality of second discharging units are formed between the discharging units; and a heater installed in the discharge space of the first discharge unit to thermally activate the chemical vapor deposition initiator or deposition gas supplied through the first supply pipe in the iCVD mode.

In addition, according to the present invention, the first shower head unit, the first supply pipe is formed so that a remote type plasma can be generated therein, a first electrode plate connected to a first power source; and an insulating member installed between the first electrode plate and the second shower head, wherein the second shower head may be connected to a ground or a second power source.

In addition, according to the present invention, the heater, a filament; a guide pulley for winding and supporting the filament so that the filament can be bent in a zigzag along the arrangement line of the first discharge parts; and an electrical connection pulley-type terminal electrically connected to the filament and wound around the filament.

In addition, according to the present invention, the heater, a sag prevention device installed on the filament to prevent sagging during heating and expansion of the filament; may further include.

In addition, according to the present invention, the anti-sag device may include a spring installed at the end of the filament.

Also, according to the present invention, the first supply pipe may be installed above the first shower head, and the second supply pipe may be installed at a side of the second shower head.

Also, according to the present invention, the first gas may be a reactive gas or a purge gas for atomic layer deposition, and the second gas may be a source gas or a purge gas for atomic layer deposition.

According to the plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator according to an embodiment of the present invention made as described above, since both the plasma ALD process and the iCVD process can be performed with a single equipment, the substrate transfer time, Equipment installation space and equipment purchase cost can be greatly reduced, and damage to the iCVD film or filament formation can be prevented by using remote plasma in a low-temperature environment. In addition to preventing mixing of the reaction gas and the source gas by using a double shower head structure, unnecessary interference between gases can be eliminated even when the process is switched between iCVD and ALD, and the purge time is shortened. It has the effect of preventing sagging caused by thermal expansion when the filament is heated using a spring. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view illustrating a plasma ALD process mode of a plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator according to some embodiments of the present invention.
FIG. 2 is a cross-sectional view illustrating an iCVD process mode of the plasma atomic layer deposition apparatus capable of chemical vapor deposition using the initiator of FIG. 1 .
3 is a bottom view of a second shower head showing a filament of the plasma atomic layer deposition apparatus capable of chemical vapor deposition using the initiator of FIG. 2 .

Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Examples of the present invention are provided to more completely explain the present invention to those of ordinary skill in the art, and the following examples may be modified in various other forms, and the scope of the present invention is as follows It is not limited to an Example. Rather, these embodiments are provided so as to more fully and complete the present disclosure, and to fully convey the spirit of the present invention to those skilled in the art. In addition, in the drawings, the thickness or size of each layer is exaggerated for convenience and clarity of description.

1 is a cross-sectional view illustrating a plasma ALD process mode of a plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using an initiator according to some embodiments of the present invention.

First, as shown in FIG. 1 , the plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using an initiator according to some embodiments of the present invention includes a chamber 10 , a susceptor 20 and , a first shower head unit 30-1, a second shower head unit 30-2, and a heater 40 may be included.

For example, as shown in FIG. 1 , the chamber 10 is a structure such as a kind of airtight room in which an accommodating space A is formed therein to accommodate the substrate 1 , and the above-described susceptor (20), the first shower head (30-1), the second shower head (30-2), and a plurality of having sufficient durability and strength to accommodate or support the heater (40) It may be composed of a panel material, a vertical material, a horizontal material, and various fixtures capable of assembling or welding them. The shape or type of the chamber 10 is not necessarily limited to the drawings, and in addition, various heaters, thermometers, pressure gauges, pumping devices, etc. may be installed.

In addition, for example, as shown in FIG. 1 , the susceptor 20 supports the substrate 1 , and a heater H, a heating block, an eject pin, etc. may be installed therein. , may be connected to a motor to rotate the substrate 1, or an angle adjusting device for adjusting a tilting angle, etc. may be installed. The susceptor 30 is also not necessarily limited to the drawings, and a wide variety of shapes or types of susceptors may be applied.

In addition, for example, as shown in FIG. 1 , a shower head according to some embodiments of the present invention includes a double portion including the first shower head 30 - 1 and the second shower head 30 - 2 . It may be a shower head structure.

Here, for example, in the ALD mode, the first shower head unit 30-1 receives the first gas for atomic layer deposition using the first supply pipe P1 and supplies it evenly to the substrate 1 . It may be an upper structure installed inside the chamber 10 and having a plurality of first discharge portions D1 formed therein.

Also, for example, the second shower head unit 30 - 2 receives the second gas for atomic layer deposition using the second supply pipe P2 and supplies the first shower head evenly to the substrate 1 . It is installed below the head part 30-1, and a plurality of second exhaust parts D2 are formed between the first exhaust parts D1 so that the second gas is not mixed with the first gas. It may be a substructure.

Accordingly, due to the double shower head structure, the first gas and the second gas may be supplied to the substrate 1 without being mixed with each other, thereby preventing the occurrence of foreign substances due to the reaction of residual gases.

Also, for example, as shown in FIG. 1 , the heater 40 is configured to thermally activate the chemical vapor deposition initiator or deposition gas supplied through the first supply pipe P1 in the iCVD mode. It may be installed in the discharge space (B) of the first discharge part (D1). That is, the heater 40 can be heated only in the iCVD mode.

More specifically, for example, as shown in FIG. 1 , the first shower head 30-1 includes the first supply pipe P1 so that a remote type plasma P can be generated therein. A first electrode plate 30-11 formed and connected to a first power source RF, and an insulating member installed between the first electrode plate 30-11 and the second shower head part 30-2 (30-12) may be included. Here, the second shower head unit 30 - 2 may be connected to the ground unit E2 or a second power source.

Accordingly, the plasma P does not act directly on the substrate 1 , but the first electrode plate 30-11 to which the first power source RF is connected and the second electrode plate 30-11 connected to the ground part E2. As it occurs only in a closed space between the shower heads 30 - 2 , it is possible to prevent damage to the iCVD film formed on the substrate 1 , which may be easily damaged by organic materials.

In addition, for example, as shown in FIG. 1 , the first supply pipe P1 is installed above the first shower head 30-1, and the second supply pipe P2 includes the second It may be installed on the side of the shower head 30 - 2, for example, the first gas may be a reactive gas or a purge gas for atomic layer deposition, and the second gas may be a source gas or a purge gas for atomic layer deposition. there is.

Accordingly, the first supply pipe P1 and the second supply pipe P2 are installed separately from each other so that the first gas, that is, the reaction gas and the second gas, that is, the source gas is supplied on the substrate 1 . Since they cannot be mixed with each other before, it is possible to prevent the occurrence of foreign substances due to the conventional mixing of residual gases.

Also, for example, a gas pumping unit 50 connected to a vacuum pump line may be installed in the chamber 10 to discharge the supplied gases to the outside.

Accordingly, when describing the operation process of the plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using an initiator according to some embodiments of the present invention, first, as shown in FIG. 1 , a purge gas-source gas - In the remote plasma atomic layer deposition process consisting of a purge gas-reactive gas-purge gas sequence, that is, in the ALD mode, the second gas, that is, the source gas (ALD Precursor) is first passed through the second supply pipe P2. It may be supplied to the inside of the second shower head unit 30 - 2 , and may be evenly distributed on the substrate 1 through the second discharge unit D2 .

Subsequently, the purge gas is supplied through the second supply pipe P2 or the first supply pipe P1 and the source gas or the substrate 1 remaining in the second shower head unit 30 - 2 . The source gas remaining in the atomic layer may be purged leaving only the atomic layer.

Subsequently, the first gas, that is, the reaction gas (ALD Reactant) is secondarily supplied to the accommodation space A of the first shower head 30-1 through the first supply pipe P1, and the receiving It may be excited by the remote plasma generated in the space (A) and supplied to the discharge space (B), and may pass through the first discharge unit (D1) to be evenly distributed onto the substrate (1).

At this time, the heater 40 installed in the discharge space B is in an inactive state in which no electric power is supplied, so that a film is not formed by the first gas but rather physically crosses the injection path of the first gas. installed to evenly distribute the first gas.

Subsequently, the purge gas is supplied through the first supply pipe P1 or the second supply pipe P2 and the source gas or the substrate 1 remaining in the first shower head unit 30 - 2 . It is possible to purge the reaction gas remaining in the atomic layer, leaving only the atomic layer. An ALD film may be formed on the substrate 1 while repeating this sequence.

FIG. 2 is a cross-sectional view illustrating an iCVD process mode of the plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using the initiator of FIG. 1 .

2 , in the iCVD process mode of the plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using an initiator according to some embodiments of the present invention, the initiator (iCVD Initiator) or the deposition gas (iCVD) monomer) is supplied to the accommodating space A of the first shower head 30-1 through the first supply pipe P1, and passes through the accommodating space A in which the plasma is deactivated to pass through the first It may be evenly distributed on the substrate 1 through the discharge part D1.

At this time, the heater 40 installed in the discharge space B is heated by supplying electric power, and may be activated by heating the initiator or the deposition gas, and the activated initiator or the deposition gas is applied to the It can be evenly sprayed on the substrate (1). Accordingly, an iCVD film can be formed on the substrate 1 .

Therefore, since both the plasma ALD process and the iCVD process can be performed with a single equipment, the substrate transfer time, equipment installation space, and equipment purchase cost can be greatly reduced, and the iCVD film can be damaged or damaged by using remote plasma in a low-temperature environment. The film formation phenomenon of the filament can be prevented, the interference with the filament can be prevented when plasma is generated by installing the filament in the discharge space, and the mixture of the reactive gas and the source gas can be prevented by using the double shower head structure. , it is possible to remove unnecessary interference between gases even when the process is switched between iCVD and ALD, and the purge time can be shortened.

3 is a bottom view of a second shower head showing a filament of the plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using the initiator of FIG. 2 .

1 to 3, the heater 40 of the plasma atomic layer deposition apparatus 100 capable of chemical vapor deposition using an initiator according to some embodiments of the present invention is a wire-shaped flexible heating wire. A filament 41 made of, and a guide pulley 42 that winds and supports the filament 41 so that the filament 41 can be bent in a zigzag along the arrangement line of the first discharge parts D1 and the filament. It may include an electrical connection pulley-type terminal 43 electrically connected to the 41 and the filament 41 is wound.

Therefore, using the guide pulley 42 and the electrical connection pulley-type terminal 43 described above, the flexible filament 41 can be arranged in a zigzag manner, and thermal contact with the filament 41 can be minimized during heating. can

In addition, for example, as shown in FIG. 3 , the heater 40 further includes a sag prevention device 44 installed on the filament 41 to prevent sagging during thermal expansion of the filament 41 . As may be included, the anti-sag device 44 may include a spring 45 installed at an end of the filament 41 .

Accordingly, it is possible to prevent sagging caused by thermal expansion when the filament 41 is heated using the spring 45 .

Although the present invention has been described with reference to the embodiments shown in the drawings, which are merely exemplary, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

1: Substrate
10: chamber
A: accommodating space
B: exhaust space
20: susceptor
30-1: first shower head unit
30-11: first electrode plate
30-12: insulating member
30-2: second shower head unit
P1: first supply pipe
P2: second supply pipe
D1: first outlet
D2: second outlet
40: heater
RF: first power
E2: Ground
41: filament
42: guide pulley
43: electrical connection pulley-type terminal
44: anti-sag device
45: spring
50: gas pumping unit
100: plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator

Claims (7)

a chamber having an accommodating space therein to accommodate the substrate;
a susceptor supporting the substrate;
a first shower head unit installed inside the chamber to receive a first gas for atomic layer deposition using a first supply pipe and uniformly supply it to the substrate in the ALD mode, the first shower head having a plurality of first discharge units;
The second gas for atomic layer deposition is supplied using a second supply pipe and is installed under the first shower head so as to be uniformly supplied to the substrate, and the first gas is not mixed with the first gas. a second shower head in which a plurality of second discharging units are formed between the discharging units; and
In the iCVD mode, a heater installed in the discharge space of the first discharge unit to thermally activate the chemical vapor deposition initiator or deposition gas supplied using the first supply pipe;
The first shower head unit,
a first electrode plate in which the first supply pipe is formed and connected to a first power source so that remote type plasma can be generated therein; and
an insulating member installed between the first electrode plate and the second shower head;
including,
A plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator, wherein the second shower head is connected to a ground or a second power source. delete a chamber having an accommodating space therein to accommodate the substrate;
a susceptor supporting the substrate;
a first shower head unit installed inside the chamber to receive a first gas for atomic layer deposition using a first supply pipe and uniformly supply it to the substrate in the ALD mode, the first shower head having a plurality of first discharge units;
The second gas for atomic layer deposition is supplied using a second supply pipe and is installed under the first shower head so as to be uniformly supplied to the substrate, and the first gas is not mixed with the first gas. a second shower head in which a plurality of second discharging units are formed between the discharging units; and
In the iCVD mode, a heater installed in the discharge space of the first discharge unit to thermally activate the chemical vapor deposition initiator or deposition gas supplied using the first supply pipe;
The heater is
filament;
a guide pulley for winding and supporting the filament so that the filament can be bent in a zigzag along the arrangement line of the first discharge parts; and
an electrical connection pulley-type terminal electrically connected to the filament and wound around the filament;
A plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator, comprising: 4. The method of claim 3,
The heater is
Plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator, further comprising; a sag preventing device installed on the filament to prevent sagging during thermal expansion of the filament. 5. The method of claim 4,
The anti-sag device includes a spring installed at an end of the filament, and a plasma atomic layer deposition device capable of chemical vapor deposition using an initiator. 4. The method of claim 1 or 3,
The first supply pipe is installed above the first shower head,
The second supply pipe is installed on a side of the second shower head, and a plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator. 4. The method of claim 1 or 3,
The first gas is a reactive gas or a purge gas for atomic layer deposition,
The second gas is a plasma atomic layer deposition apparatus capable of chemical vapor deposition using an initiator, which is a source gas or a purge gas for atomic layer deposition.

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