KR102309628B1 - Optoelectronic device having protection layer - Google Patents

Abstract

According to an embodiment of the present invention, an optical element comprises: a first electrode; a first charge transport layer formed on the first electrode; a perovskite layer formed on the first charge transport layer; a second charge transport layer formed on the perovskite layer; a second electrode formed on the second charge transport layer; a first protective layer covering the second charge transport layer and the second electrode; and a second protective layer formed on the first protective layer, wherein the first protective layer and the second protective layer include different materials.

Description

Optical device having a protective layer {OPTOELECTRONIC DEVICE HAVING PROTECTION LAYER}

The present disclosure relates to a large-area perovskite optical device having high efficiency and high durability using a protective layer.

The need to develop environmentally friendly and sustainable energy technologies that can respond to climate change is increasing. Photoelectric devices include both photoelectric conversion devices and electro-optical conversion devices. One of the photoelectric conversion devices, a solar cell, is a sustainable energy technology and is in the spotlight as a solution that can actively respond to future energy demands. A solar cell is the most basic unit of photovoltaic power generation and a semiconductor device that converts solar energy into electrical energy, and uses the photovoltaic effect.

However, today's solar cell technology does not show the efficiency enough to replace future energy demand, so technological innovation that goes beyond the current level of technology is needed. Accordingly, technologies based on innovative materials such as dye-sensitized solar cells, organic solar cells, quantum dot solar cells, and perovskite solar cells (PSC) have been developed as next-generation solar cells.

Among them, perovskite solar cells have taken off as one axis of thin film solar cells to replace conventional silicon solar cells. A perovskite solar cell including a hole transport material, a light absorption material, and an electron transport material exhibits a remarkably high photovoltaic effect by using the perovskite material as a light absorption material.

However, the durability of the perovskite solar cell is not only a problem, but it is also difficult to achieve a large area of the solar cell. A high-efficiency perovskite solar cell has been implemented only in a small area because it is difficult to obtain a uniform perovskite film over a large area. In addition, it was also found that the perovskite solar cell has poor durability against heat, humidity, and light. Therefore, there is a demand for a new technology capable of increasing durability while being able to manufacture perovskite solar cells in a large area.

Embodiments disclosed herein provide an optical device having high efficiency and high durability.

Embodiments disclosed herein provide an optical device capable of having a large area.

Embodiments disclosed herein provide an optical device in which the electrode and the charge transport layer are not exposed to the outside.

Embodiments disclosed herein provide an optical device in which the protective layer covering the electrode and the charge transport layer is not separated from the electrode and the charge transport layer.

An optical device according to an embodiment of the present disclosure includes a first electrode, a first charge transport layer formed on the first electrode, a perovskite layer formed on the first charge transport layer, and a second charge transport layer formed on the perovskite layer , a second electrode formed on the second charge transport layer, a first passivation layer covering the second charge transport layer and the second electrode, and a second passivation layer formed on the first passivation layer, the first passivation layer and the second The protective layer includes different materials.

According to an embodiment of the present disclosure, the second electrode includes Au.

According to an embodiment of the present disclosure, the second charge transport layer includes PTAA.

According to an embodiment of the present disclosure, the second protective layer includes FSA.

According to an embodiment of the present disclosure, the first protective layer includes an organic material.

According to an embodiment of the present disclosure, the organic material includes one or a combination of TPBi and TCTA.

According to an embodiment of the present disclosure, the organic material corresponds to a vapor-depositable organic material.

According to an embodiment of the present disclosure, the thickness of the first passivation layer corresponds to 10 to 200 nm.

According to various embodiments of the present disclosure, an optical device has high efficiency and high durability at the same time.

According to various embodiments of the present disclosure, it is possible to increase the area of the optical device.

According to various embodiments of the present disclosure, the electrode and the charge transport layer of the optical device are not exposed to the outside.

According to various embodiments of the present disclosure, the protective layer covering the electrode and the charge transport layer of the optical device is not separated from the electrode and the charge transport layer.

According to various embodiments of the present disclosure, by covering the electrode and the charge transport layer using two protective layers of different materials, the protective layer prevents the electrode and the charge transport layer from being separated from each other, thereby increasing the area of the optical device. It is possible to solve the problem of a sharp decrease in efficiency when

According to various embodiments of the present disclosure, it is possible to protect an optical device with only two protective layers, and furthermore, it is possible to prevent the protective layer from being separated from the electrode and the charge transport layer.

According to various embodiments of the present disclosure, an optical device may be protected only by forming two passivation layers, and a phenomenon in which the passivation layer is separated may be prevented, thereby simplifying the manufacturing process.

According to various embodiments of the present disclosure, since the protective layer may be formed using a deposition process, a manufacturing process may be simplified.

The effects of the present disclosure are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present disclosure will be described with reference to the accompanying drawings described below, wherein like reference numerals denote like elements, but are not limited thereto.
1 is a cross-sectional view of an optical device according to the prior art, illustrating a phenomenon in which a protective layer is separated from an electrode and a charge transport layer.
2 is a diagram illustrating a perovskite optical device according to an embodiment of the present disclosure.

Terms used in the present disclosure will be briefly described, and the disclosed embodiments will be described in detail. The terms used in this specification are selected as currently widely used general terms as possible while considering the functions in the present disclosure, but may vary depending on the intention or precedent of a person skilled in the art, the emergence of new technology, and the like. In addition, in a specific case, there is a term arbitrarily selected by the applicant, and in this case, the meaning will be described in detail in the description of the corresponding invention. Therefore, the terms used in the present disclosure should be defined based on the meaning of the term and the contents of the present disclosure, rather than the simple name of the term.

In this disclosure, expressions in the singular include plural expressions unless the context clearly dictates the singular. Also, the plural expression includes the singular expression unless the context clearly dictates the plural.

In the present disclosure, when a part includes a certain component, it means that other components may be further included, rather than excluding other components, unless otherwise stated.

Reference to “A and/or B” in this disclosure means A, or B, or A and B.

As used in the present disclosure, the term "about" and the like are used to encompass the tolerance when there is a tolerance.

In the present disclosure, the term “at least any one” included in the Markush-type expression means to include one or more selected from the group consisting of elements described in the Markush-type expression.

In the present disclosure, "perovskite" or "PE" means a material having a perovskite crystal structure, and may have various perovskite crystal structures in addition to the crystal structure of _{ABX 3 .}

In the present disclosure, the term “optical device” is used in a sense including both a photoelectric conversion device and an electro-optical conversion device. For example, the optical device includes, but is not limited to, a solar cell, a light emitting diode (LED), a photodetector, an X-ray detector, and a laser.

In the present disclosure, the terms “halide”, “halogen”, “halide” or “halo” refer to a material or composition in which a halogen atom belonging to Group 17 of the periodic table is included in the form of a functional group, for example, chlorine , bromine, fluorine or iodine compounds.

In the present disclosure, the term “layer” means a layer having a thickness. The layer may correspond to porous or non-porous. Porosity means having a porosity. The layer may have a bulk (bulk) shape as a whole or may correspond to a single crystal thin film, but is not limited thereto. In addition, the layers may have different thicknesses depending on the site.

In the present disclosure, when a member is said to be located "on" another member, this includes not only a case in which a member is in contact with another member but also a case in which another member exists between the two members unless otherwise stated. do.

In the present disclosure, when only efficiency is described without further explanation, the corresponding efficiency means power conversion efficiency (PCE).

Hereinafter, specific contents for carrying out the present disclosure will be described in detail with reference to the accompanying drawings. However, in the following description, if there is a risk of unnecessarily obscuring the subject matter of the present disclosure, detailed descriptions of well-known functions or configurations will be omitted.

Advantages and features of the disclosed embodiments, and methods of achieving them, will become apparent with reference to the embodiments described below in conjunction with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below, but may be implemented in various different forms, and only the present embodiments allow the present disclosure to be complete, and the present disclosure provides those skilled in the art with the scope of the invention. It is provided for complete information only.

In the accompanying drawings, identical or corresponding components are assigned the same reference numerals. In addition, in the description of the embodiments below, overlapping description of the same or corresponding components may be omitted. However, even if description regarding components is omitted, it is not intended that such components are not included in any embodiment.

An optical device according to an embodiment of the present disclosure includes a first electrode, a first charge transport layer formed on the first electrode, a perovskite layer formed on the first charge transport layer, and a second charge transport layer formed on the perovskite layer , and a second electrode formed on the second charge transport layer.

For example, when the optical device is used in a solar cell having an n-i-p structure, the optical device may have a structure in which a first electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a second electrode are sequentially stacked. Alternatively, when the optical device corresponds to a solar cell having a p-i-n structure, the solar cell may have a structure in which a first electrode, a hole transport layer, a perovskite layer, an electron transport layer, and a second electrode are sequentially stacked.

For example, the optical device may have a planar structure, a Bi-Layer structure, or a Meso-Superstructure structure. The shape of the electrode, the charge transport layer, and the perovskite layer may be changed according to the structure of the optical device.

For example, when the optical device has a Bi-Layer structure, the perovskite layer may have a bi-layer structure formed to have a layer shape by filling perovskite in _{porous TiO 2 .} The double layer may _{refer to a structure consisting of a first layer of a TiO 2 : Perovskite mixed layer in which the pores of porous TiO 2} are all filled with perovskite, and a second layer of a pure perovskite layer thereon.

The electrode comprises a first electrode and/or a second electrode and may be an anode or a cathode. The electrode may be an anode or a cathode. When the first electrode is an anode, the second electrode may be a cathode. Alternatively, when the first electrode is a cathode, the second electrode may be an anode. For example, the electrode may be a conductive oxide such as indium-tin oxide (ITO) or indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), or the like. Alternatively, the electrode may be silver (Ag), gold (Au), magnesium (Mg), aluminum (Al), platinum (Pt), tungsten (W), copper (Cu), molybdenum (Mo), nickel (Ni), palladium and a material selected from the group consisting of (Pd), chromium (Cr), calcium (Ca), samarium (Sm), and lithium (Li), and combinations thereof. Alternatively, the electrode is a flexible and transparent material such as plastic such as polyethylene terephthalate (PET), polyethylene naphthelate (PEN), polyperopylene (PP), polyimide (PI), polycarbornate (PC), polystylene (PS), and polyoxyethylene (POM). It may correspond to doping a material having conductivity thereon.

The electrode may correspond to a material commonly used as an electrode material for a front electrode or a rear electrode in an optical device. The electrode may be a material selected from one or more of gold, silver, platinum, palladium, copper, aluminum, carbon, cobalt sulfide, copper sulfide, nickel oxide, and a combination thereof, but is not limited thereto. For example, the electrode may be any one selected from fluorine-containing tin oxide (FTO; Fouorine doped tin oxide), indium-containing tin oxide (ITO; Indium doped tin oxide), ZnO, CNT (carbon nanotube), graphene, and the like; It may correspond to two or more inorganic conductive electrodes or organic conductive electrodes such as PEDOT:PSS, but is not limited thereto.

As the charge transport layer, an electron transport layer (ETL) or a hole transport layer (HTL) may be formed on the first electrode. When the first charge transport layer is an electron transport layer, the second charge transport layer may correspond to a hole transport layer. Alternatively, when the first charge transport layer is a hole transport layer, the second charge transport layer may correspond to an electron transport layer.

The electron transport layer may correspond to a semiconductor including an “n-type material”. "n-type material" means an electron transport material. The electron transport material may be a single electron transport compound or elemental material, or a mixture of two or more electron transport compounds or elemental materials. The electron transport compound or elemental material may be undoped or doped with one or more dopant elements.

For example, the electron transport layer may be an electron conductive organic material layer or an electron conductive inorganic material layer. The electron conductive organic material may be an organic material used as an n-type semiconductor in a typical organic solar cell. For example, the electron conductive organic material is fullerene (C60, C70, C74, C76, C78, C82, C95), PCBM ([6,6]-phenyl-C61butyric acid methyl ester). And C71-PCBM, C84-PCBM, PC70BM ([6,6]-phenyl C70-butyric acid methyl ester), including fullerene-derivatives (Fulleren-derivative), PBI (polybenzimidazole), PTCBI (3,4,9, 10-perylenetetracarboxylic bisbenzimidazole), F4-TCNQ (tetra uorotetracyanoquinodimethane), or a mixture thereof, but is not limited thereto.

The electron-conducting inorganic material may be an electron-conducting metal oxide used for electron transfer in a conventional quantum dot-based solar cell, a dye-sensitized solar cell, or a perovskite-based solar cell. In one embodiment, the electron conductive metal oxide may be an n-type metal oxide semiconductor. For example, n-type metal oxide semiconductors include Ti oxide, Zn oxide, In oxide, Sn oxide, W oxide, Nb oxide, Mo oxide, Mg oxide, Ba oxide, Zr oxide, Sr oxide, Yr oxide, La oxide, It may be one or more materials selected from V oxide, Al oxide, Y oxide, Sc oxide, Sm oxide, Ga oxide, In oxide and SrTi oxide, a mixture thereof, or a composite thereof, but is not limited thereto.

The electron transport layer may be a dense layer (dense film) or a porous layer (porous film). The dense electron transport layer may be the above-described electron conductive organic material or the electron conductive inorganic material dense film. The electron transport layer of the porous film may be a porous film made of particles of the above-described electron conductive inorganic material.

The hole transport layer may correspond to a semiconductor including a “p-type material”. By "p-type material" is meant a hole transporting material. The hole transport material may be a single hole transport compound or elemental material, or a mixture of two or more hole transport compounds or elemental materials. The hole transport compound or elemental material may be undoped or doped with one or more dopant elements. The hole transport material may be an organic hole transport material, an inorganic hole transport material, or a combination thereof.

The hole transport layer may be manufactured by a solution process. The hole transport layer may be a thin film of an organic hole transport material. The thickness of the hole transport layer thin film may be 10 nm to 500 nm, but is not limited thereto.

The hole transport material may correspond to an organic hole transport material, specifically, a single molecule to a high molecular organic hole transport material (hole conductive organic material). The polymer organic hole transport material may include one or two or more selected from thiophene-based, para-phenylenevinylene-based, carbazole-based and triphenylamine-based materials.

Mono- to low-molecular organic hole transport materials include pentacene, coumarin 6, 3- (2-benzothiazolyl)-7- (diethylamino) coumarin), ZnPC (zinc phthalocyanine), CuPC (copper phthalocyanine), TiOPC(titanium oxide phthalocyanine), Spiro-MeOTAD(2,2',7,7'-tetrakis(N,Np-dimethoxyphenylamino)-9,9'-spirobifluorene), F16CuPC(copper(II) 1,2,3, 4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro29H,31H-phthalocyanine), SubPc (boron subphthalocyanine chloride) and N3 (cis-di(thiocyanato)-bis (2,2'-bipyridyl-4,4'-dicarboxylic acid)-ruthenium (II)) may include, but is not limited to, one or two or more materials selected from the group consisting of.

Polymer organic hole transporting material is P3HT (poly[3-hexylthiophene]), MDMO-PPV (poly[2-methoxy-5-(3',7'-dimethyloctyloxyl)]-1,4-phenylene vinylene), MEH- PPV(poly[2-methoxy-5-(2''-ethylhexyloxy)-p-phenylene vinylene]), P3OT(poly(3-octyl thiophene)), POT( poly(octyl thiophene)), P3DT(poly(3 -decyl thiophene)), P3DDT(poly(3-dodecyl thiophene), PPV(poly(p-phenylene vinylene)), TFB(poly(9,9'-dioctylfluorene-co-N-(4-butylphenyl)diphenyl amine) , Polyaniline, SpiroMeOTAD ([2,22′,7,77′-tetrkis (N,N-di-p-methoxyphenyl amine)-9,9,9′-spirobi fluorine]), PCPDTBT(Poly[2,1, 3-benzothiadiazole-4,7-diyl[4,4-bis(2-ethylhexyl-4H-cyclopenta [2,1-b:3,4- b']dithiophene-2,6-diyl]], Si-PCPDTBT (poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole) )-4,7-diyl]), PBDTTPD(poly((4,8-diethylhexyloxyl)benzo([1,2-b:4,5-b']dithiophene)-2,6-diyl)-alt-( (5-octylthieno[3,4-c]pyrrole-4,6-dione)-1,3-diyl)), PFDTBT(poly[2,7-(9-(2-ethylhexyl)-9-hexyl-fluorene) )-alt-5,5-(4', 7, -di-2-thienyl-2',1', 3'- ben zothiadiazole)]), PFO-DBT (poly[2,7-.9,9-(dioctyl-fluorene)-alt-5,5-(4',7'-di-2-.thienyl-2', 1) ', 3'-benzothiadiazole)]), PSiFDTBT (poly[(2,7-dioctylsilafluorene)-2,7-diyl-alt-(4,7-bis(2-thienyl)-2,1,3-benzothiadiazole) -5,5′-diyl]), PSBTBT(poly[(4,4′-bis(2-ethylhexyl)dithieno[3,2-b:2′,3′-d]silole)-2,6-diyl -alt-(2,1,3-benzothiadiazole)-4,7-diyl]), PCDTBT(Poly [[9-(1-octylnonyl)-9H-carbazole-2,7-diyl] -2,5-thiophenediyl -2,1,3-benzothiadiazole-4,7-diyl-2,5-thiophenediyl]), PFB(poly(9,9′-dioctylfluorene-co-bis(N,N′-(4,butylphenyl))bis (N,N′-phenyl-1,4-phenylene)diamine), F8BT(poly(9,9′-dioctylfluorene-co-benzothiadiazole), PEDOT (poly(3,4-ethylenedioxythiophene)), PEDOT:PSS (poly (3,4-ethylenedioxythiophene) poly(styrenesulfonate)), PTAA (poly(triarylamine)), Poly(4-butylphenyldiphenyl-amine) and copolymers thereof may include one or two or more materials selected from, but are limited thereto it is not

The electron transport layer or the hole transport layer may correspond to a buffer layer, or may include a buffer layer. The surface of the electron transport layer or the hole transport layer may be modified using doping. The electron transport layer or hole transport layer is formed on one side of the electrode through spin coating, dip coating, inkjet printing, gravure printing, spray coating, bar coating, gravure coating, brush painting, thermal evaporation, sputtering, E-Beam, screen printing, blade process, etc. It may be formed by being applied to or coated in the form of a film.

The perovskite layer may be formed to directly contact the electrode. Alternatively, the perovskite layer may be formed in direct contact with the electron transport layer or the hole transport layer. The perovskite layer includes perovskite.

The perovskite layer may be formed through various processes including a vapor deposition process or a solution process. The perovskite layer may be formed using a vapor deposition process. The vapor deposition process may correspond to a process of depositing a material on a surface (eg, a substrate) of a target object by supplying a material in a vaporized state or a plasma state into a vacuum chamber. The perovskite layer may be formed through a coating process during a solution process. The coating process includes spin coating, bar coating, nozzle printing, spray coating, slot die coating, gravure printing, inkjet printing, screen printing, electrohydrodynamic jet printing, electrospray, and combinations thereof. It may be selected from the group consisting of, but is not limited thereto.

For example, a perovskite may contain a monovalent organic cation, a divalent metal cation and a halogen anion. In one embodiment, the perovskite of the present invention may satisfy the following chemical formula.

[Formula 1]

AMX ₃

In Formula 1, A is a monovalent cation, and may correspond to an organic ammonium ion, an amidinium group ion, or a combination of an organic ammonium ion and an amidinium ion.

For example, an organic cation as A may have the formula (R ₁ R ₂ R ₃ R ₄ N) ⁺ . In this case, R ₁ to R ₄ may correspond to hydrogen, unsubstituted or substituted C1-C20 alkyl, or unsubstituted or substituted aryl.

For example, the organic cation as A may have the formula (R ₅ NH ₃ ) ⁺ , where R ₅ may correspond to hydrogen or substituted or unsubstituted C1-C20 alkyl.

For example, as A, the organic cation has the formula (R ₆ R ₇ N=CH-NR ₈ R ₉ ) ⁺ , in which case R ₆ to R ₉ may correspond to hydrogen, methyl, or ethyl.

M may be a divalent metal ion. For example, M is Cu ²⁺ , Ni ²⁺ , Co ²⁺ , Fe ²⁺ , Mn ²⁺ , Cr ²⁺ , Pd ²⁺ , Cd ²⁺ , Ge ²⁺ , Sn ²⁺ , Pb ²⁺ and Yb ^{2 It} includes, but is not limited to, a metal cation selected from the group consisting of + and combinations thereof.

X may correspond to a halogen ion. For example, halogen ions include, but are not limited to, halogen ions selected from the group consisting ^{of I -} , Br ^- , F ^- , Cl ^{- and combinations thereof.}

For example, the perovskite may be any one or a mixture of two or more selected from _{CH 3} NH ₃ PbI ₃ (methylammonium lead iodide, MAPbI ₃ ) and CH(NH ₂ ) ₂ PbI ₃ (formamidinium lead iodide, FAPbI _{3 ).}

According to an embodiment of the present disclosure, a first passivation layer covering the electrode and/or the charge transport layer is formed, and a second passivation layer is formed on the first passivation layer. The first passivation layer and the second passivation layer may include different materials.

For example, as shown in FIG. 2 , the optical device according to an embodiment of the present disclosure further includes a first protective layer covering the second charge transport layer and the second electrode, and a second protective layer formed on the first protective layer. may include By using the first passivation layer and the second passivation layer, interfacial adhesion between the second electrode and the passivation layer is improved, thereby preventing the passivation layer from being separated from the electrode.

An optical device according to an embodiment of the present invention includes a first electrode, a first charge transport layer formed on the first electrode, a perovskite layer formed on the first charge transport layer, a second charge transport layer formed on the perovskite layer, A second electrode formed on the second charge transport layer, the second charge transport layer and a first passivation layer covering the second electrode, and a second passivation layer formed on the first passivation layer. The first passivation layer and the second passivation layer include different materials.

According to an embodiment of the present invention, the first protective layer may directly cover the electrode and/or the charge transport layer. According to an embodiment, the first protective layer may directly and simultaneously cover at least a portion of the electrode and the charge transport layer. The second passivation layer may be formed to directly cover the first passivation layer.

Conventionally, only one protective layer (eg, PSA) is formed to cover the electrode and the charge transport layer at the same time (see FIG. 1 ). In this case, since the materials of the electrode and the charge transport layer are different from each other, when deformation occurs due to exposure of the device to the external environment, the degree of deformation of the electrode and the charge transport layer may be different. As a result, the protective layer directly covering the electrode and the charge transport layer is separated from the electrode and/or the charge transport layer.

In order to solve this problem, according to an embodiment of the present invention, a first passivation layer covering the charge transport layer and the second electrode at the same time, and a second passivation layer formed on the first passivation layer are used. The first passivation layer and the second passivation layer may include different materials.

The first passivation layer may be made of an organic material.

The organic material constituting the first passivation layer may correspond to a material composed of one or a combination of two or more of carbon, hydrogen, nitrogen, oxygen, and sulfur. According to an embodiment of the present disclosure, the organic material may _{include any one or a combination of TPBi (C 45} H ₃₀ N ₆ ) and TCTA (C ₅₄ H ₃₆ N ₄ ), but is not limited thereto.

The organic material constituting the first passivation layer may correspond to a vapor-depositable organic material. The first passivation layer may be formed using a deposition process. Accordingly, a vapor-depositable organic material may be used to form the first passivation layer. When a vapor-depositable organic material is used, the first passivation layer may be formed by utilizing the deposition process used in the other layer (eg, the second passivation layer), thereby simplifying the process.

The second passivation layer may be formed in direct contact with the first passivation layer. The second protective layer may correspond to an encapsulation film layer for encapsulating the perovskite optical device. For example, the second passivation layer may be (2-(4-(3-fluoro)stilbenyl)ethanammonium), ethylene vinyl acetate copolymer (EVA), or phenoxy resin, but is not limited thereto. For example, the second protective layer may be formed of a material corresponding to face seal adhesive (FSA).

According to an embodiment of the present disclosure, the thickness of the first passivation layer may correspond to 10 to 200 nm. When the first passivation layer is formed with such a thickness, a phenomenon in which the passivation layer is separated from the electrode and the charge transport layer can be prevented with only two passivation layers (ie, the first passivation layer and the second passivation layer). Furthermore, since it is possible to prevent the protective layer from being spaced only by forming two protective layers, the manufacturing process can be simplified. In addition, when the first passivation layer is formed of a vapor-depositable organic material, both the first passivation layer and the second passivation layer may be formed by a vapor deposition process, thereby simplifying the process.

Example: FTO (TEC8) / mp-TiO ₂ / Perovskite / PTAA / Au / Organic (first protective layer) / FSA (second protective layer)

An optical device according to an embodiment of the present disclosure has a Bi-Layer structure. Specifically, the optical device includes FTO (TEC8) / mp-TiO ₂ / Perovskite / PTAA / Au / organic material (first protective layer) / FSA (second protective layer). The first passivation layer may be vacuum deposited to have a thickness between 10 and 200 nm. Thereafter, encapsulation may be performed by bonding the FSA at 50° C. or higher.

Comparative Example: FTO (TEC8) / mp-TiO ₂ / Perovskite / PTAA / Au / FSA

The optical device according to the comparative example has a Bi-Layer structure. Specifically, the optical device includes FTO (TEC8) / mp-TiO ₂ / Perovskite / PTAA / Au / FSA.

Performance Comparison

The performance of the optical device was evaluated by the following method using the perovskite optical device prepared in Examples and Comparative Examples, and the results are shown in Tables 1 and 2 below.

_{1) Current-voltage characteristics: Open-circuit voltage (V OC} ), short-circuit current density using an artificial solar device (ORIEL class A solar simulator, Newport, model 91195A) and a source-meter (Kethley, model 2420) (J _SC ) and fill factor (FF) were measured.

2) photoelectric conversion efficiency (PCE): 280 to 280 to perovskite optical devices manufactured in Examples and Comparative Examples under a constant temperature and constant humidity condition of a sunlight intensity of 1,000 W/m 2 and a temperature of 85° C. and a humidity of 85% The PCE value was measured by exposure to a light source having a wavelength of 2500 nm.

3) Stability: The measured PCE value was substituted into the following formula to evaluate stability.

Formula = (η ₁ /η ₀ ) x 100

In the formula, η ₀ means the initial photoelectric conversion efficiency of the perovskite optical device immediately after starting the stability test, and η ₁ is the photoelectric conversion after exposing the same perovskite solar cell to 85°C and 85% conditions for 100 hours. means efficiency.

Efficiency comparison of photoelectric conversion devices J _sc (mA/cm ² ) V _oc (V) FF PCE (%) Example 135 18 75 18.22 comparative example 133 17.7 74.2 17.46

According to Table 1, the photoelectric conversion device according to the embodiment exhibits higher power conversion efficiency than the comparative example.

Comparison of stability of photoelectric conversion device (85℃, 85% condition, efficiency after 100 hours) initial efficiency final efficiency Efficiency retention (%) Example 18.22 18 98.8 comparative example 17.96 11.2 62.36

According to Table 2, it can be confirmed that the photoelectric conversion device according to the embodiment has significantly improved device stability than the comparative example.

The above-described preferred embodiments of the present invention have been disclosed for the purpose of illustration, and various modifications, changes and additions will be possible within the spirit and scope of the present invention by those skilled in the art with respect to the present invention, and such modifications, changes and additions should be considered to be within the scope of the claims.

Those of ordinary skill in the art to which the present invention pertains, within the scope of not departing from the technical spirit of the present invention, various substitutions, modifications and changes are possible, so the present invention is described in the above-described embodiments and the accompanying drawings. not limited by

Claims (9)

a first electrode;
a first charge transport layer formed on the first electrode;
a perovskite layer formed on the first charge transport layer;
a second charge transport layer formed on the perovskite layer;
a second electrode formed on the second charge transport layer;
a first protective layer directly covering the second charge transport layer and the second electrode; and
a second passivation layer formed on the first passivation layer
including,
The first protective layer and the second protective layer include different materials,
The first protective layer includes a vapor-depositable organic material, the thickness of the first protective layer corresponds to 10 ~ 200nm,
and the second protective layer comprises a depositable FSA.
According to claim 1,
The second electrode comprises Au, an optical device.
3. The method of claim 2,
The second charge transport layer comprises PTAA, an optical device.
delete delete According to claim 1,
The organic material comprises one or a combination of TPBi and TCTA, an optical device. delete delete delete

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