KR102261954B1 - Phosphor film, light emitting device package and lighting apparatus including the same - Google Patents

Abstract

The phosphor film of the embodiment and the light emitting device package and lighting device including the same include a phosphor layer; and a protective layer disposed to surround the phosphor layer. The phosphor layer includes a base resin and fluorine-based red phosphor particles dispersed in the base resin, so that it is possible to prevent deterioration of optical properties under conditions such as high temperature and high humidity while implementing improved optical properties. can have

Description

Phosphor film, light emitting device package and lighting device including same {PHOSPHOR FILM, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS INCLUDING THE SAME}

The embodiment relates to a phosphor film formed including phosphor particles, a light emitting device package including the same, and a lighting device.

Light emitting devices such as light emitting diodes or laser diodes using group III-V or group II-VI compound semiconductor materials of semiconductors are developed in various colors such as red, green, blue, and ultraviolet light through thin film growth technology and development of device materials. By using fluorescent materials or combining colors, efficient white light can be realized, and compared to conventional light sources such as fluorescent lamps and incandescent lamps, low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness have

In the method of realizing white light, it is divided into a method of combining a fluorescent material on a blue or ultraviolet (UV: Ultra Violet) light emitting diode chip as a single chip method, and a method of obtaining white light by manufacturing it in a multi-chip form and combining them with each other.

In the case of the multi-chip type, there is a method of manufacturing by combining three types of chips, typically RGB (Red, Green, Blue), which means that the operating voltage of each chip is non-uniform, or the output of each chip is affected by the surrounding environment. There is a problem in that color coordinates change due to the difference.

In addition, in the case of realizing white light with a single chip, a method of obtaining white light by excitation of light emitted from a blue LED and at least one phosphor using the light is used.

In the implementation of white light using such a phosphor composition, attempts to improve luminance and Color Rendering Index (CRI) continue, and in particular, development of new phosphors to obtain high-quality optical properties is continuously being made. In addition, in the development of a new phosphor having excellent optical properties, it is required to secure reliability with respect to temperature, humidity, or light.

The embodiment intends to implement a phosphor film with improved reliability while maintaining optical properties by manufacturing a fluorine-based red phosphor in the form of a film, and a light emitting device package and a lighting device including the same.

Examples include a phosphor layer; and a protective layer disposed to surround the phosphor layer. Including, wherein the phosphor layer provides a phosphor film including a base resin and fluorine-based red phosphor particles dispersed in the base resin.

The emission center wavelength of the red phosphor particles may be 620 nm to 640 nm.

The red phosphor particles may be represented by the formula K ₂ MF ₆ :Mn ^{4 +} (where M is at least one of Si, Ge, and Ti).

A primer layer may be further included between the phosphor layer and the protective layer.

The protective layer may include at least one _{of SiO 2} , TiO ₂ , Al ₂ O ₃ , MgO, and In ₂ O _{3 .}

The primer layer may be a transparent resin layer, and the primer layer may be a PVP layer.

Another embodiment includes a package body having a cavity; a light emitting device disposed on a bottom surface of the cavity; a molding part surrounding the light emitting device and disposed in the cavity; a first lead frame and a second lead frame fixed on the package body and electrically connected to the light emitting device; And it provides a light emitting device package including the phosphor film of the above-described embodiment disposed on the molding part.

The molding part may include a green phosphor that is excited by the light emitted from the light emitting device and emits light in a green wavelength region.

The green phosphor may be at least one of a LuAG (LuAG:Ce ^{3 +} ) series or a β-sialon (SiAlON:Eu ^{2 + ) series.}

The molding part _{may further include at least one of SiO 2} , TiO ₂ , MgO, BaO, and polystyrene particles.

It may further include a blocking layer disposed on the bottom surface of the cavity and the light emitting device.

The blocking layer may _{include at least one of SiO 2} , TiO ₂ , MgO, BaO, and polystyrene particles.

The light emitting device may emit light in a blue or ultraviolet wavelength region.

Another embodiment provides a lighting device including the light emitting device package of the above-described embodiment as a light source.

In the case of the phosphor film according to the embodiment and the light emitting device package including the same, the fluorine-based red phosphor is formed in a film shape to realize improved optical properties and can have high reliability under conditions such as high temperature and high humidity.

1 is a cross-sectional view of a phosphor film according to an embodiment;
2 is a view showing an embodiment of a light emitting device package,
3 is a view showing an embodiment of a light emitting device,
4 to 5 are views illustrating embodiments of a light emitting device package.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention that can specifically realize the above objects will be described with reference to the accompanying drawings.

In the description of the embodiment according to the present invention, in the case where it is described as being formed in "on or under" of each element, above (above) or below (on) or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as “up (up) or down (on or under)”, it may include the meaning of not only the upward direction but also the downward direction based on one element.

Also, as used hereinafter, relational terms such as “first” and “second”, “upper/upper/above” and “lower/lower/below” refer to any physical or logical relationship or order between such entities or elements. may be used only to distinguish one entity or element from another, without necessarily requiring or implying that

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size.

1 is a cross-sectional view showing a phosphor film according to an embodiment.

Referring to FIG. 1 , the phosphor film according to an exemplary embodiment may include a phosphor layer 101 and a protective layer 105 disposed to surround the phosphor layer 101 .

In this case, the phosphor layer 101 may include a base resin 101a serving as a matrix material and fluorine-based red phosphor particles 101b dispersed in the base resin.

The base resin 101a may be formed of a polymer resin in order to facilitate processing into a film shape including phosphor particles. Specifically, the base resin 101a may include a silicone resin, a poly (methylmethacrylate) (PMMA) resin, or a poly styrene (PS) resin.

In addition, the base resin 101a may serve as a support for the phosphor particles to be dispersed and fixed.

The phosphor particles 101b included in the phosphor layer 101 may be fluorine-based red phosphor particles.

The red phosphor particles may be represented by _{Formula K 2} MF ₆ :Mn ^{4 + .} Here, M may be at least one of Si (Silicone), Ge (Germanium), and Ti (Titanium).

The fluorine-based red phosphor particles included in the embodiment may be excited by blue or ultraviolet light to emit light.

For example, the fluorine-based red phosphor particles may be excited in a wavelength range of 400 nm to 500 nm.

The emission center wavelength of the fluorine-based red phosphor particles may be 620 nm to 640 nm.

The fluorine-based red phosphor has a luminescence center wavelength in the long-wavelength range, and has a narrow Full Width at Half Maximum, compared to the conventional nitride-based red phosphor, so that it has high color reproducibility. can have

In addition, due to good color characteristics, a small amount of red phosphor can be used compared to the case of using a conventional nitride-based red phosphor, so that the luminous intensity of light emitted by being excited by the light emitting device can be improved. .

Referring to FIG. 1 , the protective layer 105 may surround the phosphor layer 101 and may be disposed outside the phosphor layer 101 .

The protective layer 105 may protect the phosphor layer 101 from external heat, moisture, or light.

That is, in the phosphor film 100 of an embodiment, the protective layer 105 is disposed around the phosphor layer 101 , so that high optical properties are maintained even when exposed to continuous light and reliability conditions such as high temperature and high humidity. can have

In addition, as described above, when the fluorine-based red phosphor is included in the phosphor layer 101, the protective layer 105 blocks moisture or light that can penetrate from the outside of the phosphor layer, so that the fluorine-based red phosphor is exposed to high temperature and high humidity conditions or light. Even when exposed for a long time, it can have the effect of exhibiting high color gamut and optical characteristics.

The protective layer 105 may include at least one _{of SiO 2} , TiO ₂ , Al ₂ O ₃ , MgO, and In ₂ O _{3 .}

The protective layer 105 may be disposed to cover the upper and lower surfaces of the phosphor layer 101 as well as the side surfaces to prevent moisture from penetrating into the phosphor layer 101 .

The protective layer 105 may be manufactured by coating a liquid material including at least one _{of SiO 2} , TiO ₂ , Al ₂ O ₃ , MgO or In ₂ O _{3 on the phosphor layer 101 and curing it.} .

In this case, SiO ₂ , TiO ₂ , Al ₂ O ₃ , MgO or In ₂ O ₃ may be the filler particles, and these filler particles may be coated in a dispersed state in a polymer resin or the like.

For example, the polymer resin may be an acrylic resin or a silicone resin, and the filler particles are SiO ₂ can be

Meanwhile, the protective layer 105 and the phosphor layer 101 may be injection molded into a film shape in one process to form the phosphor film 100 . In addition, a method of forming a film layer by dipping the manufactured phosphor layer into a material for forming a protective layer after manufacturing the phosphor layer 101 may be used.

A primer layer 103 may be further included between the phosphor layer 101 and the protective layer 105 .

The primer layer 103 may serve as a connection layer that allows the protective layer 105 to be well fixed to the phosphor layer 101 .

The primer layer 103 may be formed to have a uniform thickness between the phosphor layer 101 and the protective layer 105 .

In addition, the primer layer 103 may be made of a transparent resin layer so as not to affect the optical properties of the phosphor layer 101, for example, the primer layer 103 is PVP (Poly Vinyl Pyrrolidone) or PVA (Poly Vinyl Pyrrolidone) Alcohol) may be included in the layer.

The primer layer including PVP or PVA may increase adhesion between the phosphor layer 101 and the protective layer 105 .

The primer layer 103 may be formed on the phosphor layer 101 before the protective layer 105 is disposed, and is formed by a coating process, a film injection process, or a dipping process, similar to the above-described method of manufacturing the protective layer 105 . can be

In the phosphor film according to an embodiment, the phosphor layer 101 may be formed to a thickness of 10 μm to 500 μm. In this case, the protective layer 105 and the primer layer 103 may be formed to have a thickness smaller than that of the phosphor layer 101 , for example, the thickness of the primer layer is 1 μm to 100 μm, and the thickness of the protective layer is 10 nm to 10 nm. It may be 10 μm.

The phosphor film of the above-described embodiment may emit red light having excellent optical properties by including the fluorine-based red phosphor as phosphor particles, and by forming a protective layer surrounding the phosphor layer, the reliability of the phosphor layer can be improved. Even in an environment exposed to continuous light, high-quality light emission characteristics may be obtained.

2 is a view showing an embodiment 200a of a light emitting device package.

The light emitting device package 200a according to the embodiment may include a package body 130 having a cavity and a light emitting device 110 disposed on the bottom surface of the cavity, and the package body 130 includes the light emitting device 110 and the electrical power of the package body 130 . Lead frames 142 and 144 for connection may be fixedly disposed.

In addition, the light emitting device 110 may be disposed on the bottom surface of the cavity in the cavity, and the molding unit 160 may be disposed to surround the light emitting device 110 in the cavity, and on the molding unit 160 , as described above The phosphor film 100 of the embodiment may be included.

The package body 130 may be formed of a silicon material, a synthetic resin material, or a metal material, and may be formed of a ceramic material having excellent thermal conductivity.

The upper portion of the package body 130 is open and may have a cavity composed of a side surface and a bottom surface.

The cavity may be formed in a cup shape, a concave container shape, or the like, and the side surface of the cavity may be formed to be perpendicular or inclined with respect to the bottom surface, and the size and shape thereof may vary.

The shape of the cavity viewed from above may be a circular shape, a polygonal shape, an elliptical shape, or the like, and may have a curved edge shape, but is not limited thereto.

The package body 100 may include lead frames 142 and 144 for electrical connection with the light emitting device 110 .

The lead frame may include the first lead frame 142 and the second lead frame 144 , and may be formed by being fixed to the package body 130 .

On the other hand, when the package body 130 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the package body 130 to prevent an electrical short circuit between the first and second lead frames 142 and 144 . can do.

The first lead frame 142 and the second lead frame 144 may be electrically isolated from each other, and may supply a current to the light emitting device 110 . In addition, the first lead frame 142 and the second lead frame 144 may reflect light generated from the light emitting device 110 to increase light efficiency, and heat generated from the light emitting device 110 to the outside. It can also be ejected.

The light emitting device 110 may be disposed in the cavity, disposed on the package body 130 , or disposed on the first lead frame 142 or the second lead frame 144 . The disposed light emitting device 110 may be a horizontal light emitting device in addition to a vertical light emitting device.

In the embodiment shown in FIG. 2 , the light emitting device 110 is disposed on the first lead frame 142 , and may be connected to the second lead frame 144 through a wire 146 , but the light emitting device 110 . may be connected to the lead frame by flip-chip bonding or die bonding in addition to the wire bonding method.

The light emitting device 110 may include a light emitting diode or the like.

3 is a view showing an embodiment of the light emitting device 110 , the light emitting device 110 may include a support substrate 70 , a light emitting structure 20 , an ohmic layer 40 , and a first electrode 80 . can

The light emitting structure 20 includes a first conductivity type semiconductor layer 22 , an active layer 24 , and a second conductivity type semiconductor layer 26 .

The first conductivity type semiconductor layer 22 may be implemented with a compound semiconductor such as III-V group or II-VI group, and may be doped with a first conductivity type dopant. The first conductivity type semiconductor layer 22 is _{a semiconductor material having a composition formula of Al x} In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), AlGaN , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, may be formed of any one or more of AlGaInP.

When the first conductivity-type semiconductor layer 22 is an n-type semiconductor layer, the first conductivity-type dopant may include an n-type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 22 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 24 is disposed between the first conductivity type semiconductor layer 22 and the second conductivity type semiconductor layer 26 , and has a single well structure, a multiple well structure, a single quantum well structure, and a multiple quantum well. It may include any one of a (MQW: Multi Quantum Well) structure, a quantum dot structure, or a quantum wire structure.

The active layer 24 uses a III-V group element compound semiconductor material to form a well layer and a barrier layer, for example, AlGaN/AlGaN, InGaN/GaN, InGaN/InGaN, AlGaN/GaN, InAlGaN/GaN, GaAs (InGaAs). It may be formed in any one or more pair structure of /AlGaAs, GaP(InGaP)/AlGaP, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than that of the barrier layer.

The second conductivity type semiconductor layer 26 may be formed of a semiconductor compound. The second conductivity-type semiconductor layer 26 may be implemented with a compound semiconductor such as a III-V group or a II-VI group, and may be doped with a second conductivity-type dopant. The second conductivity type semiconductor layer 26 is, for example, _{a semiconductor material having a composition formula of In x} Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) , AlGaN, GaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, may be formed of any one or more of AlGaInP, for example, the second conductivity type semiconductor layer 26 is made of Al _x Ga _(1-x) N can

When the second conductivity-type semiconductor layer 26 is a p-type semiconductor layer, the second conductivity-type dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity type semiconductor layer 26 may be formed as a single layer or a multilayer, but is not limited thereto.

The surface of the first conductivity type semiconductor layer 22 may be patterned to improve light extraction efficiency. In addition, the first electrode 80 may be disposed on the surface of the first conductivity type semiconductor layer 22 , and although not shown, the surface of the first conductivity type semiconductor layer 22 on which the first electrode 80 is disposed may not form a pattern. The first electrode 80 may include at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au) to have a single-layer or multi-layer structure. have.

A passivation layer 90 may be formed around the light emitting structure 20 . The passivation layer 90 may be made of an insulating material, and the insulating material may be made of a non-conductive oxide or nitride. For example, the passivation layer 90 may include a silicon oxide (SiO ₂ ) layer, an oxynitride layer, and an aluminum oxide layer.

A second electrode may be disposed under the light emitting structure 20 , and the ohmic layer 40 and the reflective layer 50 may function as the second electrode. GaN is disposed under the second conductivity-type semiconductor layer 26 to smoothly supply current or holes to the second conductivity-type semiconductor layer 26 .

The ohmic layer 40 may have a thickness of about 200 angstroms (Å). The ohmic layer 40 includes indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). ), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx , NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, It may be formed including at least one of Au and Hf, but is not limited to these materials.

The reflective layer 50 includes molybdenum (Mo), aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. It may be made of a metal layer. The reflective layer 50 effectively reflects the light generated by the active layer 24 , thereby greatly improving the light extraction efficiency of the semiconductor device.

The support substrate 70 may be formed of a conductive material such as a metal or a semiconductor material. A metal having excellent electrical or thermal conductivity may be used, and heat generated during operation of a semiconductor device should be sufficiently dissipated, so it may be formed of a material (eg, metal, etc.) having high thermal conductivity.

For example, it may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or an alloy thereof, and also gold (Au). ), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafer (eg, GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O ₃ may be any one) and the like may be optionally included.

The support substrate 70 does not cause warpage to the entire nitride semiconductor, and has a mechanical strength of 50 μm to 200 μm to be well separated into separate chips through a scribing process and a breaking process. It may have a thickness of μm.

The bonding layer 60 bonds the reflective layer 50 and the support substrate 70, gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si), silver (Ag), It may be formed of a material selected from the group consisting of nickel (Ni) and copper (Cu) or an alloy thereof.

The embodiment of the light emitting device 110 shown in FIG. 3 is an embodiment of a vertical light emitting device, but in the embodiment of the light emitting device package 200a shown in FIG. 2 , in addition to the vertical light emitting device shown in FIG. 3 , a horizontal type A light emitting device or a flip-chip type light emitting device may be disposed. In this case, the light emitting device 110 may emit light in a blue light wavelength region.

Referring back to FIG. 2 , in the light emitting device package 200a according to an exemplary embodiment, the molding unit 160 may be formed to surround the light emitting device 110 and fill the cavity of the package body 130 .

The molding unit 160 may include a resin unit 163 and at least one or more phosphors 165 .

The molding unit 160 may be disposed to surround the light emitting device 110 to protect the light emitting device 110 .

The resin 163 included and used in the molding unit 160 may be in the form of any one of a silicone-based resin, an epoxy-based resin, and an acrylic resin, or a mixture thereof.

In addition, the phosphor 165 may be excited by the light emitted from the light emitting device 110 to emit wavelength-converted light.

For example, the light emitted from the light emitting device may be blue light, and the molding part of the light emitting device package may include a green phosphor that is excited by the blue light and emits green light.

The green phosphor included in one embodiment is LuAG (LuAG:Ce ^{3 +} ) It may include at least one of a series or a β-sialon (β-SiAlON:Eu ^{2 + ) series.}

For example, the Luac-based green phosphor is Lu ₃ Al ₅ O ₁₂ :Ce ^{3 +} One can, a green phosphor of β- SiAlON family is _{Si 6 - z Al z O z} N 8 -z: may be Eu ^{+ 2} (where a, 0 <z <2).

In this case, the emission center wavelength of the green phosphor that is excited by the light emitting device and emits light may be 530 nm to 545 nm.

Referring to FIG. 2 , the phosphor film 100 of the above-described embodiment may be disposed on the molding unit 160 .

The phosphor film 100 may be fixedly disposed on the upper surface of the molding unit 160 .

In addition, the phosphor film 100 may be seated and disposed on the molding unit 160 without physical or chemical bonding with the upper surface of the molding unit 160 .

In this case, the fluorine-based red phosphor included in the phosphor film 100 may be excited by the light emitted from the light emitting device 110 of the light emitting device package to emit red light.

The light emitting device package of the exemplary embodiment of FIG. 2 is composed of a phosphor film including blue light emitted from the light emitting device and a green phosphor and a red phosphor included in the molding part to emit white light.

4 to 5 are views of another embodiment of a light emitting device package.

Hereinafter, in the description of the embodiment of FIGS. 4 to 5 , the content overlapping with the embodiment of the light emitting device package of FIG. 2 will not be described again, and differences will be mainly described.

The light emitting device package 200b of an embodiment shown in FIG. 4 includes a package body 130 having a cavity, a molding unit 160 disposed in the cavity and surrounding the light emitting device 110 and the light emitting device disposed on the bottom surface of the cavity, and The phosphor film 100 disposed on the molding unit 160 may be included.

In the embodiment of FIG. 4 , the molding unit 160 may _{further include at least one of SiO 2} , TiO ₂ , MgO, BaO, and poly styrene (PS) particles 167 in addition to the resin 163 and the green phosphor 165 . have.

By further including these filler particles 167 in the molding unit 160 , thermal stability or moisture resistance of the molding unit may be improved in the embodiment of FIG. 4 .

For example, _{by further including SiO 2} particles in the molding part, the moisture resistance of the molding part is increased, thereby reducing moisture transfer to the phosphor film disposed on the molding part, and consequently improving the reliability of the phosphor film can be

On the other hand, in the _{case of the embodiment in which the fluorine-based red phosphor represented by Chemical Formula K 2} MF ₆ :Mn ^{4 +} is included in the phosphor film 100 , the fluorine-based red phosphor may be protected by a protective layer constituting the phosphor film. In addition, in the case of the embodiment of FIG. 4 , the filling particles 167 are further included in the molding part, so that moisture or light transmitted to the phosphor film 100 through the molding part 160 can be blocked once more, so that the light emitting device package Reliability can be improved.

Accordingly, in the light emitting device package embodiment shown in FIG. 4 , improved optical properties when the fluorine-based red phosphor is used can be maintained even under a high temperature, high humidity condition or a condition exposed to continuous light. The light emitting device package 200c of the example includes a package body 130 having a cavity, a molding unit 160 and a molding unit 160 disposed in the cavity to surround the light emitting device 110 and the light emitting device disposed on the bottom surface of the cavity. It includes the phosphor film 100 disposed therein, and may further include a blocking layer 170 disposed on the bottom surface of the cavity and the light emitting device.

The blocking layer 170 may _{include at least one of SiO 2} , TiO ₂ , MgO, BaO, and poly styrene (PS) particles.

The blocking layer 170 disposed in the molding part 160 may include SiO ₂ , TiO ₂ , MgO, BaO, poly styrene (PS) particles, and the like to improve thermal stability or moisture resistance of the molding part.

In addition, the blocking layer 170 is formed to be disposed on the light emitting device 110 and disperses light emitted from the light emitting device 110 so that uniform light is emitted from the green phosphor included in the molding part and the phosphor disposed on the molding part. It may be supplied to the film 100 .

Meanwhile, the blocking layer 170 may be formed on the bottom surface of the cavity formed in the package body 130 to block moisture from penetrating toward the molding unit 160 from the bottom of the package body. In this case, when the lead frames 142 and 144 are disposed on the package body, the blocking layer 170 may be formed on the lead frame.

Accordingly, the light emitting device package 200c of the embodiment shown in FIG. 5 blocks moisture by disposing the blocking layer 170, so that reliability can be improved.

In addition, in the _{case of the embodiment in which the fluorine-based red phosphor represented by the formula K 2} MF ₆ :Mn ^{4 +} is included in the phosphor film 100 , the blocking layer 170 also blocks moisture and light, and protects the phosphor film It can be protected by the layer once more, so that it can exhibit high color reproducibility and good flux even under reliable conditions such as severe high temperature and high humidity.

Hereinafter, an image display device and a lighting device will be described as an embodiment of a lighting system in which the above-described light emitting device packages 200a to 200c are disposed.

A plurality of light emitting device packages 200a to 200c according to the embodiment may be arrayed on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, etc. may be disposed on the light path of the light emitting device packages 200a to 200c. can The light emitting device package 200 , the substrate, and the optical member may function as a backlight unit.

In addition, it may be implemented as a display device, an indicator device, and a lighting device including the light emitting device packages 200a to 200c according to the embodiment.

Here, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module emitting light, a light guide plate disposed in front of the reflecting plate and guiding light emitted from the light emitting module in front of the light guide plate An optical sheet including prism sheets disposed thereon, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel, and a color filter disposed in front of the display panel may include Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit.

In addition, the lighting device is a light source module including a substrate and a light emitting device package 200 according to an embodiment, a heat sink for dissipating heat of the light source module, and processing or converting an electrical signal provided from the outside to provide the light source module It may include a power supply unit. For example, the lighting device may include a lamp, a head lamp, or a street lamp.

The head lamp includes a light emitting module including light emitting device packages 200a to 200c disposed on a substrate, a reflector for reflecting light emitted from the light emitting module in a predetermined direction, for example, forward, and light reflected by the reflector It may include a shade for forming a light distribution pattern desired by a designer by blocking or reflecting a portion of the light reflected by the lens and the reflector that refracts the light toward the lens.

In the case of the above-described image display device and lighting device, by using the light emitting device packages 200a to 200c including the phosphor film of the above-described embodiment, the luminous flux and color reproducibility can be improved, and also in environments such as high temperature and high humidity. Reliability can be improved by reducing reduction in optical properties such as changes in luminous flux and color coordinates under unattended conditions.

Although the embodiment has been described above, it is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100: phosphor film 101: phosphor layer
105: protective layer 110: light emitting element
130: package body 160: molding part
170: blocking layer 200a, 200b, 200c: light emitting device package

Claims (15)

a package body having a cavity;
a light emitting device disposed on a bottom surface of the cavity;
a molding part surrounding the light emitting device and disposed in the cavity;
a first lead frame and a second lead frame fixed on the package body and electrically connected to the light emitting device;
a blocking layer disposed on the bottom surface of the cavity and the light emitting device; and
a phosphor film disposed on the molding part;
The blocking layer may include upper surfaces of the first and second leadframes exposed on the bottom surface of the cavity, the upper surfaces of the body exposed by the first and second leadframes spaced apart on the bottom surface of the cavity, In direct contact with the inner surface of the cavity, the side surface of the light emitting element, and the upper surface of the light emitting element,
The phosphor film,
phosphor layer;
a protective layer disposed surrounding the phosphor layer; and
a primer layer disposed between the phosphor layer and the protective layer;
The protective layer is disposed to surround the entire upper surface, the bottom surface and the side surface of the phosphor layer,
The thickness of the protective layer and the primer layer is thinner than the phosphor layer,
The phosphor layer includes a base resin and fluorine-based red phosphor particles dispersed in the base resin,
The red phosphor particles are represented by the formula K ₂ MF ₆ :Mn ⁴⁺ (where M is at least one of Si, Ge, and Ti),
The light emitting device is a light emitting device package that emits light in a blue or ultraviolet wavelength region. delete The method of claim 1,
The thickness of the phosphor layer is 10 μm to 500 μm,
The protective layer has a thickness of 10 nm to 10 μm and includes at least one of _{SiO 2} , TiO ₂ , Al ₂ O ₃ , MgO, In ₂ O _{3 ,}
The primer layer has a thickness of 1㎛ to 100㎛ a light emitting device package comprising PVP (Poly Vinyl Pyrrolidone) or PVA (Poly Vinyl Alcohol). The method of claim 1,
The molding part includes a green phosphor that is excited by the light emitted from the light emitting device and emits light in a green wavelength region,
The green phosphor is at least one of a LuAG (LuAG:Ce ³⁺ ) series or a β-sialon (SiAlON:Eu ²⁺ ) series light emitting device package. The method of claim 1,
The blocking layer is a light emitting device package comprising at least one _{of SiO 2} , TiO _{2 , MgO, BaO, and polystyrene particles.} delete delete delete delete delete delete delete delete delete delete

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