KR102259562B1 - The exposure mask for liquid crystal display device and exposure method of liquid crystal display device using thereof - Google Patents

Abstract

The present invention relates to an exposure mask for a liquid crystal display device and an exposure method of a liquid crystal display device using the same, and in particular, an exposure mask for a liquid crystal display device in which stitch defects are improved in a COT type liquid crystal display device, and an exposure method of a liquid crystal display device using the same. is about
A feature of the present invention is that R, G, and B color filter patterns are formed using an exposure mask including a shift exposure unit in the process of manufacturing a COT type liquid crystal display device, so that the reflective visibility and poor cell gap near the boundary of the exposure area are dulled. By doing so, in the divided exposure process, the human visual perception at the boundary of the exposure area feels ambiguous, so that stitch defects such as band spots are less felt.
In addition, since the exposure process using the exposure mask of the present invention requires only two exposure steps to expose the first and second exposure areas while improving stitch defects at the boundary of the exposure area, the existing Lego exposure Since the number of shots can be reduced compared to the method, the process time can be reduced, and thus the efficiency of the process can be improved.

Description

TECHNICAL FIELD The exposure mask for liquid crystal display device and exposure method of liquid crystal display device using the same

The present invention relates to an exposure mask for a liquid crystal display device and an exposure method of a liquid crystal display device using the same, and in particular, an exposure mask for a liquid crystal display device in which stitch defects are improved in a COT type liquid crystal display device, and an exposure method of a liquid crystal display device using the same. it's about

In line with the recent information age, the display field has also developed rapidly, and in response to this, a liquid crystal display device (FPD) has the advantages of thinness, light weight, and low power consumption. LCD), plasma display panel device (PDP), electroluminescence display device (ELD), field emission display device (FED), etc. : CRT) is rapidly replacing and attracting attention.

Among them, the liquid crystal display is excellent in displaying moving images and is most actively used in fields such as notebook computers, monitors, and TVs due to its high contrast ratio.

The liquid crystal display includes a first substrate on which a switching element and a pixel electrode are formed, a second substrate on which a color filter and a common electrode are formed, and liquid crystal interposed between the two substrates. In such a liquid crystal display, a common electrode and a pixel The liquid crystal is driven by an electric field applied vertically between the electrodes, and it has excellent properties such as transmittance and aperture ratio.

In such a liquid crystal display device, a mask process is sequentially performed on a substrate to form a switching device or R, G, and B color filter layers are formed. The mask process is largely a deposition process and a photo lithography process. , and an etching process.

In this case, in the photolithography process, a photoresist is applied to the entire surface of the substrate, a mask is placed on the substrate, and then an exposure process is performed.

Here, the unit of one exposure process is called a shot, and in general, the liquid crystal display performs exposure with one shot for one unit panel.

However, in recent years, as the liquid crystal display device to be developed has gradually increased in area, the size of the unit panel constituting the liquid crystal display device has grown larger than that of the existing mask. Therefore, the active region cannot be exposed with one shot and the active region is re-applied. It is divided into a plurality of areas, and each area is divided and exposed with a corresponding shot.

1 is a diagram schematically illustrating a general divided exposure process, schematically illustrating an exposure process for a substrate divided into first and second exposure areas.

As shown, the mask 20 is positioned over the substrate 1 defined by dividing the active area AA into the first and second exposure areas 13 and 15 . At this time, the mask 20 is exposed to light. It is positioned to correspond to the first exposure area 13 to be exposed.

Next, light is irradiated on the upper part of the mask 20 to expose it.

In this case, the mask 20 includes an exposure part 21 corresponding to the first exposure area 13 of the substrate 1 , and a blocking part (not shown) and a transmission part (not shown) in the exposure part 21 . ) is configured to selectively transmit or block light according to the shape of a desired pattern to form various patterns in the exposure areas 13 and 15 of the substrate 1 .

Accordingly, after the exposure process of the first exposure area 13 is completed, the mask 20 is moved to expose the second exposure area 15 adjacent to the first exposure area 13 to expose the active area of the unit panel. (AA) is all divided exposure.

At this time, in the divided exposure process of exposing one exposure area 13 and then sequentially exposing the other exposure areas 15, due to misalignment of the mask 20, the vicinity of the boundary surface between the adjacent exposure areas 13 and 15 misalignment occurs between the patterns, and thus, luminance non-uniformity is generated at the interface between the exposure regions 13 and 15, so that the boundary surface of the exposure regions 13 and 15 visually looks like a band. Stitch defect will cause

In particular, in a so-called COT (Color filter On TFT) type liquid crystal display device in which a color filter and a switching element formed on the upper and lower substrates, respectively, which have been recently proposed are formed on the same substrate, a pixel ( As the black matrix surrounding the edge of P) is omitted, a stitch defect is caused as a bigger problem.

Here, the stitch defect in the COT type liquid crystal display device is incident from the outside due to the difference according to the degree of overlap between the R, G, and B color filter patterns in the vicinity of the interface between the adjacent exposure areas 13 and 15 . It is caused by the difference in the angle of reflection of light.

2 is a schematic diagram for explaining that a stitch defect occurs in a COT type liquid crystal display device.

As shown, when the color filter patterns 17a, 17b, and 17c are formed in the active area (AA in FIG. 1) on the substrate 1 through a divided exposure process, the R color filter in the first exposure area 13 is In the pattern 17a and the G color filter pattern 17b, an open area spaced apart from the R color filter pattern 17a and the G color filter pattern 17b by a predetermined interval may be generated by the exposure process by the first shot. The R color filter pattern 17a and the G color filter pattern 17b of the second exposure area 15 adjacent to the first exposure area 13 are formed by an exposure process by a second shot. 17a and the G color filter pattern 17b may be formed to overlap each other.

As described above, when the area between the color filter pattern 17 of the first exposure area 13 and the second exposure area 15 is exposed differently, such as open or overlapping, through the area Light incident from the outside is reflected so as to have different reflection angles (ⓐ, ⓑ), and through this, stitching due to luminance non-uniformity according to the reflection luminance at the interface between the first exposure area 13 and the second exposure area 15 defects will occur.

Accordingly, in recent years, in order to compensate for such poor stitching, a lego exposure method of double exposing the interface between the exposed exposure areas 13 and 15 has been provided. In a part near the interface between the first exposure area 13 and the second exposure area 15, the Lego pattern exposure method is applied in units of R, G, and B pixels to expose some parts and expose some parts. Then, when the second shot is performed, the pixels that are not exposed in the first shot are exposed, and the pixels that have been exposed are not exposed.

In this way, in the area where the exposure areas 13 and 15 overlap, the area to be exposed by the first shot and the area to be exposed by the second shot are separated and exposed in units of pixels, so that the adjacent exposure areas 13 and 15 are exposed. It is possible to reduce the stitch defect that looks like a band felt by the user at the boundary.

However, such a Lego exposure method requires a large number of shots.

That is, when there are two divided exposure areas 13 and 15 in one unit panel, the conventional exposure process is completed through two shots, but in the Lego exposure method, the exposure process is completed through four shots. Due to such an increase in the number of shots, the Lego exposure method increases the process time, causing a problem of low process efficiency.

SUMMARY OF THE INVENTION The present invention is to solve the above problems, and a first object is to improve stitch defects formed at the boundary of an exposure area.

Through this, it is a second object to improve the image quality of the liquid crystal display.

In addition, the third purpose is to improve the efficiency of the process.

In order to achieve the object as described above, the present invention relates to an exposure mask used in an exposure process for manufacturing a liquid crystal display device, an alignment exposure unit precisely aligned with a pixel defined on a substrate, and an alignment exposure portion on the substrate. Provided is an exposure mask for a liquid crystal display including a shift exposure unit that is randomly moved with a shift interval in a row direction or a column direction from a defined pixel.

In this case, the shift exposure unit moved in the row direction is randomly formed in shift regions defined at left and right edges of the exposure mask in the row direction, and the shift exposure unit moved in the row direction is located on the front surface of the exposure mask. formed randomly across

In addition, the number of the shift exposure units moved in the row direction increases toward the edge of the row direction, and the shift interval of the shift exposure units moved in the row direction increases toward the edge of the row direction.

In addition, the shift interval is ±1 ~ ±5㎛.

In addition, the present invention provides a method of exposing each region of a substrate defined by n exposure regions, comprising: an alignment exposure unit precisely aligned with a pixel defined on the substrate in the n-th exposure region; A first exposure process is performed through an exposure mask including a shift exposure unit that is randomly moved with a shift interval in a row or column direction from a defined pixel, and the exposure mask is moved for an n+1th and performing a second exposure process on the exposure area, wherein the R, G, and B color filter patterns formed by the shift exposure unit have edges with the R, G, and B color filter patterns formed in neighboring pixels. Provided is an exposure method of a liquid crystal display that is formed to overlap or to be spaced apart from each other by a predetermined distance.

In this case, when the shift exposure unit is moved in the column direction, the R, G, and B color filter patterns have a difference in height in a region between neighboring pixels in each column direction.

In addition, in an exposure mask used in an exposure process for manufacturing a liquid crystal display device, an alignment exposure unit aligned with a pixel defined on a substrate and a shift interval in a row direction from a pixel defined on the substrate are provided. and an exposure mask for a liquid crystal display including a first shift exposure part having a random shift and a second shift exposure part moving randomly with a shift interval in a column direction from a pixel defined on the substrate.

Here, the first and second shift exposure portions are randomly formed in shift regions defined at left and right edges of the exposure mask in the row direction, and the number of the first and second shift exposure portions increases toward the edge of the exposure mask in the row direction. increases

In addition, the shift interval is ±1 ~ ±5㎛.

As described above, in the process of manufacturing a COT-type liquid crystal display device according to the present invention, R, G, and B color filter patterns are formed using an exposure mask including a shift exposure unit to form R, G, and B color filter patterns near the boundary of the exposure area. By slowing down the cell gap defect, the human visual perception at the boundary of the exposure area in the divided exposure process becomes vague, and has the effect of reducing stitch defects such as band spots.

In addition, since the exposure process using the exposure mask of the present invention requires only two exposure steps to expose the first and second exposure areas while improving stitch defects at the boundary of the exposure area, the existing Lego exposure Compared to the method, the number of shots can be reduced, and the process time can be reduced, so that the efficiency of the process can be improved.

1 is a view schematically showing a general divided exposure process.
2 is a schematic diagram for explaining that a stitch defect occurs in a COT type liquid crystal display device;
3A is a diagram schematically illustrating a divided exposure process of a liquid crystal display according to a first embodiment of the present invention.
FIG. 3B is an enlarged view of the shift region of FIG. 3A and a first exposure region corresponding thereto;
4A is a schematic diagram schematically illustrating a color filter pattern formed through an exposure mask according to a first embodiment of the present invention for each pixel;
4B is a schematic diagram schematically illustrating a reflection angle reflected from each pixel;
5A to 5B are comparative schematic diagrams for explaining that stitch defects are improved in the COT type liquid crystal display according to the first embodiment of the present invention.
6A to 6F are schematic diagrams illustrating shift intervals of a shift exposure unit formed to correspond to an exposure area boundary;
7A is a plan view schematically illustrating an exposure area of a COT type liquid crystal display according to a second embodiment of the present invention;
7B is a cross-sectional view taken along line VII-VII of FIG. 7A;
7C is a schematic diagram schematically illustrating a color filter pattern formed through an exposure mask according to a second embodiment of the present invention for each pixel;
8 is a diagram schematically illustrating a divided exposure process of a liquid crystal display according to a third embodiment of the present invention.
9 is a schematic diagram schematically illustrating a color filter pattern formed through an exposure mask according to a third embodiment of the present invention for each pixel;
10 is a schematic diagram for explaining that the stitch defect is improved.
11 is a schematic diagram illustrating a shift interval of a shift exposure unit formed to correspond to an exposure area boundary;
12A to 12B are simulation results showing that the reflective visual sensation is improved through the exposure mask according to the embodiment of the present invention.

Hereinafter, an embodiment according to the present invention will be described in detail with reference to the drawings.

-First embodiment-

3A is a diagram schematically illustrating a divided exposure process of a liquid crystal display according to a first embodiment of the present invention, and schematically illustrates an exposure process for a substrate divided into first and second exposure areas.

3B is an enlarged view of the shift region of FIG. 3A and the corresponding first exposure region.

As shown, the exposure mask 120 is placed on the upper portion of the substrate 111 defined by dividing the active area AA in which a plurality of pixels P are defined into first and second exposure areas 113 and 115 . The exposure mask 120 is positioned to correspond to the first exposure area 113 to be exposed.

That is, in order to manufacture the upper and lower substrates of the liquid crystal display device, several exposure masks 120 are used and the same number of exposure processes are performed. As the size of the substrate increases, the substrate 111 is also used when patterning one layer. It will be partially exposed.

Here, in the exposure process, for example, when R, G, and B color filter patterns are to be formed on the substrate 111, R, G, and B color pigments are sequentially applied on the substrate 111, respectively, and then to be formed. An exposure mask 120 having a pattern corresponding to the R, G, and B color filter patterns is arranged on the substrate 111 coated with R, G, and B color pigments, and through the exposure mask 120 . By irradiating light on the substrate 111, the pigment is selectively irradiated with light.

Accordingly, R, G, and B color filter patterns are formed on the substrate 111. As the liquid crystal display device to be developed recently has gradually increased in area, such an exposure mask 120 has a size of the substrate 111. Since the area is quite small compared to the area, in order to form patterns on the entire surface of the substrate 111, the active area AA of the substrate 111 is divided into a plurality of areas 113 and 115, and then each of the areas 113 and 115 is formed. It is necessary to perform divided exposure in which exposure is performed through a plurality of shots in turn.

Accordingly, the active area AA on the substrate 111 is divided into first and second exposure areas 113 and 115 to perform divided exposure, and the exposure mask 120 is first exposed to the first exposure area 113 . ) is located in correspondence with

When the exposure process by the first shot of the first exposure area 113 is completed using the exposure mask 120 formed to correspond to the first exposure area 113 , the exposure mask 120 is formed on the second exposure area 115 . ) so that the exposure process by the second shot of the second exposure area 115 is performed.

Here, the exposure mask 120 includes a plurality of exposure portions 121 to which light is irradiated corresponding to the pixels P defined in the active area AA on the substrate 111 , and the plurality of exposure portions 121 . A blocking part (not shown) and a transmission part (not shown) are configured in each of them to selectively transmit or block light according to the shape of a desired pattern, thereby providing multiple patterns in the exposure areas 113 and 115 of the substrate 111. to form

In this case, the exposure mask 120 of the present invention is characterized in that the shift region 123 is formed in a region corresponding to the interface between the first exposure region 113 and the second exposure region 115 .

Here, referring to FIG. 3B , in the shift region 123 , some of the exposure parts (hereinafter, referred to as shift exposure parts) 125 of the plurality of exposure parts 121 are randomly arranged in a row direction (±X-axis direction defined in the drawing). The shift exposure part 125 is formed so as not to be accurately aligned with the pixel P defined in the active area AA on the substrate 111 as it is moved at a predetermined interval.

Accordingly, when the first exposure area 113 is exposed using the exposure mask 120 , a pattern is generated by the shift exposure unit 125 in the vicinity of the interface between the first exposure area 113 and the second exposure area 115 . Thus, the pattern formed on the substrate 111 is moved from the pixel P defined on the substrate 111 in the row direction (±X-axis direction defined in the drawing) at a predetermined interval to be formed.

Accordingly, the pattern formed by being patterned by the shift exposure unit 125 is formed to overlap with the pattern formed in the neighboring pixels P in the row direction, or is formed with an open space therebetween.

And, when the second exposure area 115 is exposed, the vicinity of the interface between the first exposure area 113 and the second exposure area 115 is also patterned by the shift exposure unit 125 and formed on the substrate 111 . The pattern is formed by moving at a predetermined interval from the pixel P defined on the substrate 111 in the row direction (±X-axis direction defined in the drawing).

As a result, stitch defects are improved in the vicinity of the interface between the first exposure area 113 and the second exposure area 115 , thereby improving the image quality of the liquid crystal display.

In particular, using the exposure mask 120 including the shift exposure unit 125 according to the first embodiment of the present invention, the R, G, and B color filter patterns are formed in the COT type liquid crystal display in which the black matrix is not formed. By doing so, it is possible to further improve stitch defects occurring in the vicinity of the interface between the first and second exposure areas 113 and 115 even in a non-driving state in which the liquid crystal panel is not driven.

This will be described in more detail with reference to FIGS. 4A to 4B.

4A is a schematic diagram schematically illustrating a color filter pattern formed through an exposure mask according to the first embodiment of the present invention for each pixel, and FIG. 4B is a schematic diagram schematically illustrating a reflection angle reflected from each pixel.

As shown in FIG. 4A , R, G, B color filter patterns 117a, 117a, and B on a substrate 111 using an exposure mask ( 120 in FIG. 3B ) including a shift exposure unit ( 125 in FIG. 3B ). When 117b and 117c are formed, some R, G, and B color filter patterns 119a, 119b, and 119c formed near the boundary between the first exposure region 113 and the second exposure region 115 are shift-exposed portions. (125 in FIG. 3B), the pixel P is formed by moving at a predetermined interval in the row direction (±X-axis direction defined in the drawing).

Accordingly, the R, G, and B color filter patterns 119a, 119b, and 119c formed by the shift exposure unit 125 in FIG. 3B are R, G formed in the neighboring pixels P positioned in the shifted row direction. , B is formed to overlap the color filter patterns 117a, 117b, and 117c, or to be formed with an open space therebetween.

Through this, the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c are overlapped in the vicinity of the interface between the first exposure area 113 and the second exposure area 115 . Since the formed area and the area having an open area without overlapping exist coexist, light having various reflection angles is reflected, so that the space between the first exposure area 113 and the second exposure area 115 is mixed. Stitch defects occurring in the vicinity of the interface are improved.

Looking at this in more detail, the human eye's visual recognition is very sensitive in recognizing regular pattern arrangement and luminance difference. In one exposure area 113, 115, the R, G, B color filter patterns 117a, 117b, When one color filter pattern among 117c) is exposed by a single shot, one color filter pattern 117a, 117b, 117c formed in the exposure areas 113 and 115 is formed to overlap with the neighboring color filter patterns. Or they are all formed to have the same open area.

As described above, when one color filter pattern all overlaps with the neighboring color filter patterns or is formed to have an open area, other color filter patterns are also formed to overlap all the neighboring color filter patterns or have an open area.

Accordingly, the R, G, and B color filter patterns 117a, 117b, and 117c formed in the plurality of pixels P positioned in the first exposure area 113 are respectively the R, G, and B color filter patterns 117a and 117b. , 117c) are formed to have the same open area or overlap each other, the light incident from the outside from the first exposure area 113 is reflected to have only an average reflection angle according to the R, G, and B colors. , each of the R, G, and B color filter patterns 117a and 117b of the R, G, and B color filter patterns 117a, 117b, and 117c formed in the plurality of pixels P positioned in the second exposure area 115; 117c), the light incident from the outside from the second exposure area 115 has different R, G, and B colors from the average reflection angle of the first exposure area 113 when all overlapping or open spaces are formed. It is reflected with an average angle of reflection.

That is, only the R-ⓐ reflection angle, the G-ⓑ reflection angle, and the B-ⓑ reflection angle are reflected from the first exposure area 113 , and the R-ⓑ reflection angle and the G-ⓐ reflection angle are reflected from the second exposure area 115 . Only the angle of reflection B-ⓐ will be reflected.

(Here, ⓐ denotes the reflection angle reflected when neighboring R, G, and B color filter patterns are overlapped, and ⓑ denotes an open region between the neighboring R, G, and B color filter patterns. It represents the angle of reflection.)

Therefore, human visual recognition recognizes light of different reflection angles according to R, G, and B colors that are clearly different at the boundary between the first exposure area 113 and the second exposure area 115, so that a regular pattern Due to the disposition and the luminance difference, the human eye's visual recognition is very sensitive to a stitch defect such as a band stain at the interface between the first and second exposure areas 113 and 115 .

However, the human eye's visual recognition property is relatively low in recognizing a pattern that changes gradually over a wide range. Therefore, by making use of the ambiguity of the human eye's visual recognition property to make defects caused by display stains less noticeable, the liquid crystal display device can improve the quality of

That is, as in the first embodiment of the present invention, using an exposure mask (120 in FIG. 3B ) having a shift exposure unit (125 in FIG. 3B ), R, G, B color filter patterns ( When 117a, 117b, and 117c are formed, the R, G, and B color filter patterns 117a and B formed in the respective exposure areas 113 and 115 even when one exposure area 113 and 115 is exposed by one shot. One of the color filter patterns 117b, 117c, 119a, 119b, and 119c) is formed to be mixed so that an area between the color filter patterns and the neighboring color filter patterns is opened or overlapped.

In this way, as one color filter pattern is formed so that the region between it and the neighboring color filter pattern is opened or overlapped, other color filter patterns are also formed overlapping with the neighboring color filter pattern or mixed to have an open region. do.

Accordingly, the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c formed near the interface between the first and second exposure areas 113 and 115 are the R, G, and B color filter patterns. R, G, and B color filter patterns 119a, 119b, and 119c formed corresponding to the shift-exposed portion (125 in FIG. 3B ) are formed to be opened or overlapped between the regions 117a, 117b, and 117c in the row direction. As it is moved and formed (in the ±X-axis direction defined in the drawing), some R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, 119c are also formed with overlapping regions or formed open. will become

That is, a region between the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c is opened near the interface between the first and second exposure regions 113 and 115, or R, G, A plurality of regions in which the B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c overlap each other occur and are randomly arranged.

Accordingly, as shown in FIG. 4B , in the vicinity of the interface between the first and second exposure regions 113 and 115, the region between the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c is In addition to the average reflection angle of only R-ⓐ reflection angle, G-ⓑ reflection angle, and B-ⓑ reflection angle, from the first exposure area by the area formed by open or overlapping, R-ⓑ reflection angle, G-ⓐ reflection angle, and B-ⓐ reflection angle so that the light with ⓐ reflection angle, R-ⓑ reflection angle, G-ⓐ reflection angle, G-ⓑ reflection angle, B-ⓐ reflection angle, and B-ⓑ reflection angle is also reflected from the second exposure area. do.

Accordingly, in the vicinity of the interface between the first and second exposure areas 113 and 115, the number of reflection angles increases and the sense of reflection is dulled, so that a person's visual perception becomes ambiguous, and stitch defects such as band spots are less felt.

Accordingly, since the person feels that the display quality of the liquid crystal display has improved, the image quality of the liquid crystal display is improved.

This will be described in more detail with reference to FIGS. 5A to 5B .

5A to 5B are comparative schematic diagrams for explaining that stitch defects are improved in the COT type liquid crystal display according to the first embodiment of the present invention.

First, when color filter patterns 17a, 17b, and 17c are formed on a substrate (11 in FIG. 1) using a general exposure mask (20 in FIG. 1), as shown in FIG. 5A, R, G, B The color filter patterns 17a, 17b, and 17c are formed for each pixel P defined based on the data line DL. At this time, the color filter pattern is formed in the active area on the substrate 11 through a divided exposure process. Then, the R, G, and B color filter patterns 17a, 17b, and 17c of the first exposure area 13 are all R color filter patterns 17a and G color filter patterns 17b through the exposure process by the first shot. ) is formed to have an open area spaced apart from each other by a predetermined interval, and as such, an open area is formed between the R color filter pattern 17a and the G color filter pattern 17b, so that all G color filter patterns 17b and The B color filter pattern 17c, the B color filter pattern 17c, and the R color filter pattern 17a are all overlapped and formed.

Accordingly, only light having an R-ⓐ reflection angle is reflected from the first exposure area 13 from the open area between the R color filter pattern 17a and the G color filter pattern 17b, and the G color filter pattern 17b Only the light having the G-ⓑ reflection angle and the B-ⓑ reflection angle is reflected from the overlapping regions between the B color filter pattern 17c and the B color filter pattern 17c and the R color filter pattern 17a, respectively.

Then, the R, G, and B color filter patterns 17a, 17b, and 17c of the second exposure area 15 adjacent to the first exposure area 13 are formed by the exposure process by the second shot to form the R color filter patterns ( 17a) and the G color filter pattern 17b are all overlapped and formed, and between the G color filter pattern 17b and the B color filter pattern 17c and between the B color filter pattern 17c and the R color filter pattern ( 17a) is formed to have an open area.

Accordingly, only light having an R-ⓑ reflection angle is reflected from the second exposure area 15 from the overlapping area between the R color filter pattern 17a and the G color filter pattern 17b, and the G color filter pattern 17b). Only the light having the G-ⓐ reflection angle and the B-ⓐ reflection angle is reflected from the overlapping regions between the and B color filter patterns 17c and between the B color filter patterns 17c and the R color filter patterns 17a, respectively.

That is, only light having the R-ⓐ reflection angle, G-ⓑ reflection angle, and B-ⓑ reflection angle is reflected from the first exposure area 13 , and from the second exposure area 15 , the R-ⓑ reflection angle, G Only light with -ⓐ reflection angle and B-ⓐ reflection angle will be reflected.

Accordingly, light having different reflection angles is reflected from the first exposure area 13 and the second exposure area 15 even with the same R color, so that the light between the first exposure area 13 and the second exposure area 15 is separated from the first exposure area 13 and the second exposure area 15 . In the vicinity of the boundary surface, the visual perception of the human eye is very sensitive to different angles of reflection (R-ⓐ, G-ⓑ, B-ⓑ, R-ⓑ, G-ⓐ, B-ⓐ).

Accordingly, a person feels a stitch defect such as a band spot at the interface between the first and second exposure areas 13 and 15 .

On the other hand, as in the first embodiment of the present invention, an exposure mask ( 120 in FIG. 3B ) including a shift exposure part ( 125 in FIG. 3B ) is used to divide the active area (AA in FIG. 3B ) on the substrate 111 . When the color filter patterns 117a, 117b, and 117c are formed through the exposure process, the color filter patterns 119a, 119b, and 119c exposed by the shift exposure unit (125 in FIG. 3B) move in the row direction (in the drawing). In the defined ±X-axis direction), some of the color filter patterns 119a, 119b, and 119c are formed to overlap with the neighboring color filter patterns 117a, 117b, and 117c, or a region between them is opened. will be formed

Accordingly, the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c of the first exposure area 113 are formed by the R color filter pattern 117a and G by the first shot exposure process. The color filter patterns 117b may be formed to have open regions spaced apart from each other by a predetermined interval, and the R color filter pattern 119a and the G color filter pattern 117b may be formed by a shift exposure unit (125 in FIG. 3B). The spaces may be formed overlapping each other.

Here, when the R color filter pattern 117a and the G color filter pattern 117b are formed to have open areas spaced apart from each other by a predetermined interval, between the G color filter pattern 117b and the B color filter pattern 117c. and the B color filter pattern 117c and the R color filter pattern 117a are formed to overlap, and when the R color filter pattern 119a and the G color filter pattern 117b are formed to overlap, The G color filter pattern 117b and the B color filter pattern 117c and between the B color filter pattern 117c and the R color filter pattern 117a are formed to be spaced apart from each other by a predetermined interval.

Accordingly, from the first exposure area 113, light having an R-ⓐ reflection angle, a G-ⓑ reflection angle, and a B-ⓑ reflection angle, along with light having an R-ⓑ reflection angle, a G-ⓐ reflection angle, and a B-ⓐ reflection angle are all mixed and reflected.

In addition, the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c of the second exposure area 115 are formed with the R color filter pattern 117a and the R color filter pattern 117a through the exposure process by the second shot. The G color filter patterns 117b may overlap each other, and the R color filter patterns 117a and the G color filter patterns 119b may be opened by the shift exposure unit ( 125 in FIG. 3B ). When the R color filter pattern 117a and the G color filter pattern 117b are overlapped and formed, the G color filter pattern 119b and the B color filter pattern 117c and between the B color filter pattern 117c and the B color filter pattern 117c are formed. The R color filter patterns 117a are opened at a predetermined interval, and when the R color filter patterns 117a and G color filter patterns 119b are opened, the G color filter patterns 119b and B colors are formed. The filter patterns 117c and between the B color filter patterns 117c and the R color filter patterns 117a are formed to overlap each other.

Accordingly, from the second exposure area 115, light having an R-ⓐ reflection angle, a G-ⓑ reflection angle, and a B-ⓑ reflection angle, and light having an R-ⓑ reflection angle, a G-ⓐ reflection angle, and a B-ⓐ reflection angle are all mixed and reflected.

Accordingly, the human eye's visual perception is that as light having various angles of reflection is reflected from the first exposure area 113 and the second exposure area 115 , the visual perception due to the reflection angle is dulled.

That is, since the light reflected from the first exposure area 113 and the second exposure area 115 is not distinguished, the person's visual recognition is vague and less stitch defects such as band spots are felt.

Accordingly, since the person feels that the display quality of the liquid crystal display has improved, the image quality of the liquid crystal display is improved.

Here, the shift exposure portion (125 in FIG. 3B) of the exposure mask (120 in FIG. 3B) is moved to have a shift interval of ±1 to ±5 μm from the pixel (P in FIG. 4A) defined on the substrate 111, The color filter patterns 117a, 117b, 117c, 119a, 119b, 119c adjacent to the color filter patterns 119a, 119b, and 119c formed by the shift exposure unit (125 in FIG. 3B) are formed on the data line DL. ) and spaced apart or preferably formed to overlap.

In addition, it is preferable that the shift interval of the shift exposed portion ( 125 in FIG. 3B ) increases or the ratio of the shift exposed portion ( 125 in FIG. 3B ) increases as the boundary between the exposure areas 113 and 115 is increased.

6A to 6F are schematic diagrams illustrating shift intervals of a shift exposure unit formed to correspond to an exposure area boundary.

As shown in FIG. 6A , the exposure mask ( 120 in FIG. 3B ) includes a shift region 123 including a shift exposure portion ( 125 in FIG. 3B ), and the shift region 123 includes the exposure mask ( FIG. 3B ). 120) can be defined by dividing 5 each on both sides.

At this time, the shift region 123 includes an exposure portion (hereinafter, referred to as an alignment exposure portion) that is precisely aligned with the pixel (P in FIG. 4A) defined on the substrate (111 in FIG. 5B) (121 in FIG. 3B); It includes a shift exposure unit (125 in FIG. 3B) formed by being moved to have a shift interval of ±1 to ±5 μm from the pixel (P in FIG. 4A), and the alignment exposure unit (121 in FIG. 3B) is set to 0 μm. In other words, the proportion of the alignment exposure portion ( 121 in FIG. 3B ) is gradually reduced as it approaches the boundary of the exposure areas 113 and 115 , and the shift exposure portion ( 125 in FIG. 3B ) is the exposure area 113 and 115 . It is desirable to gradually increase the shift interval and ratio as it approaches the boundary of .

That is, when the alignment exposure portion ( 121 in FIG. 3B ) is formed to have a ratio of 90% in the first shift region 123a located farthest from the boundary between the exposure regions 113 and 115 , a shift interval of ±1 μm The shift-exposed portion ( 125 in FIG. 3B ) having a ratio of 10% is formed. At this time, the shift exposure unit (125 in FIG. 3B) and the alignment exposure unit (121 in FIG. 3B) are randomly positioned within the above ratio.

Further, in the second shift region 123b adjacent to the first shift region 123a, the alignment exposure portion (121 in FIG. 3B) is 80%, and the shift exposure portion (125 in FIG. 3B) having a shift interval of ±1 μm. ) is 10%, so that 10% of the shift exposure part (125 in FIG. 3B) having a shift interval of ±2 μm is formed, and 70% of the alignment exposure part (121 in FIG. 3B) is formed in the third shift region 123c. , ± 1 μm, ± 2 μm, and ± 3 μm shift exposure portions (125 in FIG. 3B ) are formed by 10% each, and the alignment exposure portion (FIG. 3B) is formed in the fourth shift area 123d. 121) of 60%, ±1㎛, ±2㎛, ±3㎛, and the shift exposure part (125 in Fig. 3b) having a shift interval of ±4㎛ is formed by 10% each, and the fifth shift region ( 123e), the alignment exposure part (121 in Fig. 3b) has a shift interval of 50%, ±1㎛, ±2㎛, ±3㎛, ±4㎛, ±5㎛ shift exposure part (125 in Fig. 3b) to form 10% each.

Alternatively, they may be arranged to be arranged as shown in FIGS. 6B and 6C , or the shift region 123 may be divided into three parts as shown in FIG. 6D to have the same ratio for each region.

In addition, the shift region 123 may be formed to have a width of 15 mm to 50 mm from the boundary of the exposure region, or as shown in FIGS. 6E and 6F , the entire exposure mask 120 is the shift region 123 . Thus, the shift exposure unit ( 125 in FIG. 3B ) may be randomly positioned over the entire surface of the exposure mask 120 .

Here, when the shift exposure unit (125 in FIG. 3B ) is randomly positioned over the entire surface of the exposure mask 120 , the shift exposure unit ( 125 in FIG. 3B ) and the alignment exposure unit ( 121 in FIG. 3B ) are identical to each other. It may be arranged to have a ratio, and the shift exposure unit ( 125 in FIG. 3B ) may be arranged to have a smaller ratio than the alignment exposure unit ( 121 in FIG. 3B ).

Here, the width of the shift region 123, the number of divisions, and the ratio of the shift exposure part (125 in FIG. 3B) and the alignment exposure part (121 in FIG. 3B) include the shift exposure part (125 in FIG. 3B). Various designs are possible without departing from the gist of the present invention of the exposure mask 120 .

As described above, the COT type liquid crystal display device of the present invention uses the exposure mask 120 including the shift exposure unit (125 in FIG. 3B) to obtain R, G, and B color filter patterns (117a, 117b in FIG. 5b, By forming 117c, 119a, 119b, and 119c, light having various reflection angles can be reflected near the boundary of the exposure areas 113 and 115, so that in the divided exposure process, a person at the boundary of the exposure areas 113 and 115 can be reflected. By slowing the visual perception of the reflex, the human visual perception becomes vague, and less stitch defects such as band stains are felt.

Accordingly, the person feels that the display quality of the liquid crystal display is improved.

In addition, the exposure process using the exposure mask 120 of the present invention improves the stitch defect at the boundary of the exposure areas 113 and 115 and exposes the first and second exposure areas 113 and 115 in two shots. Since only the exposure process is required, the number of shots can be reduced compared to the existing Lego exposure method, and the process time can be reduced, thereby improving the efficiency of the process.

In addition, the shift exposure portion (125 in FIG. 3B) of the exposure mask 120 randomly moves from the pixel (P in FIG. 4A) defined on the substrate (111 in FIG. 5B) in the column direction (the Y-axis direction defined in the diagram). It may be formed by being moved at regular intervals.

Through this, stitch defects due to cell gap non-uniformity at the boundary between the exposure areas 113 and 115 may also be improved.

On the other hand, when the R color filter pattern 117a and the G color filter pattern 117b are formed to have an open area, the G color filter pattern 117b, the B color filter pattern 117c, and the B color filter pattern 117c are formed. Although it is exemplified that all overlap between the and the R color filter pattern 117a is formed, an open area may be formed between the B color filter pattern 117c and the R color filter pattern 117a.

In addition, when the R color filter pattern 119a and the G color filter pattern 117b are overlapped and formed, the G color filter pattern 117b and the B color filter pattern 117c and between the B color filter pattern 117c and the B color filter pattern 117c are formed. Although it has been described as an example that the R color filter patterns 117a are spaced apart from each other, the B color filter patterns 117c and the R color filter patterns 117a may overlap each other.

-Second embodiment-

7A is a plan view schematically illustrating an exposure area of a COT type liquid crystal display according to a second embodiment of the present invention, and FIG. 7B is a cross-sectional view taken along line VII-VII of FIG. 7A.

7C is a schematic diagram schematically illustrating a color filter pattern formed through an exposure mask according to a second embodiment of the present invention for each pixel.

As shown in FIGS. 7A and 7B , the active area AA in which the plurality of pixels P of the COT type liquid crystal display are defined is divided into first and second exposure areas 113 and 115 .

In this case, the R, G, and B color filter patterns 117a, 117b, and 117c are formed to overlap each other in the region between the pixels P adjacent to each other in the column direction (±Y-axis direction defined in the drawing), and the region thereof A columnar column spacer 118 for maintaining a gap between the lower substrate 111 and the upper substrate is configured on the upper substrate (not shown) corresponding to the .

Here, as exposure processes by different shots are performed on the first and second exposure areas 113 and 115 , R, G, and B formed in the first exposure area 113 and the second exposure area 115 . A height difference between the color filter patterns 117a (not shown, 117c) occurs.

When a difference in height between the R, G, and B color filter patterns 117a, not shown, 117c occurs, between the column spacer 118 formed on the upper substrate and the R, G, B color filter patterns 117a, not shown, 117c The separation area D is present, and a step difference between the lower substrate 111 of the first exposure area 113 and the step difference of the lower substrate 111 of the second exposure area 115 (the separation area D) occurs. Since the amount of liquid crystal existing between the first and second exposure regions 113 and 115 is different, a cell gap defect occurs due to a luminance difference according to the difference in the amount of liquid crystal during electric field driving.

Here, since the height difference between the R, G, and B color filter patterns 117a, 117b, and 117c in one exposure region 113 and 115 is formed to be the same, such a cell gap defect is caused by the exposure region 113, 117c. 115), there is a difference, and through this, the human eye recognizes it as a regular pattern arrangement and a difference in luminance.

That is, when a cell gap defect does not occur in the first exposure area 113 and a cell gap defect occurs in the second exposure area 115 , the human eye's visual recognition is very sensitive to this, and the gap between the exposure areas 113 and 115 is very sensitive. At the boundary of , a stitch defect due to cell gap non-uniformity is felt.

Accordingly, the exposure mask ( 120 in FIG. 6f ) according to the second embodiment of the present invention corresponds to the position where the column spacer 118 is formed in the process of forming the R, G, and B color filter patterns 117a , 117b and 117c . Thus, some of the exposure parts (hereinafter, shift exposure part) (125 in FIG. 3b) of the plurality of exposure parts (121 in FIG. 3b) are randomly moved in the column direction (±Y-axis direction defined in the drawing) at regular intervals to be formed. characterized in that

Through this, as shown in FIG. 7C , in both the first exposure area 113 and the second exposure area 115 , the pixel P defined on the substrate 111 by the shift exposure unit ( 125 in FIG. 3B ). The R, G, and B color filter patterns 119a, 119b, and 119c are formed which are not precisely aligned with and moved at regular intervals in the column direction (±Y-axis direction defined in the drawing).

Through this, some of the R, G, and B color filter patterns 119a, 119b, and 119c among the R, G, and B color filter patterns 117a, 117b, and 117c formed in the region between the pixels P adjacent in the column direction. As the overlapping degree with the color filter pattern positioned on the lower portion is distorted, a difference in the thickness of the protective layer 116 positioned on the color filter pattern is generated.

That is, the cell gap difference in which the spaced region D exists between the column spacer 118 and the R, G, and B color filter patterns 117a (not shown, 117c) between the first and second exposure regions 113 and 115 is It is to form a plurality of generated areas and arrange them randomly.

Through this, the cell gap defect due to the spaced region D between the column spacer 118 and the R, G, and B color filter patterns 117a, 117b, 117c, 119a, 119b, and 119c is the first exposure region 113 and Since the cell gap defect is slowed down by the human eye by causing it to occur in several areas over the second exposure area 115 , the human eye feels vaguely aware of the cell gap defect, and thus the cell gap defect is less felt.

Accordingly, a stitch defect due to cell gap non-uniformity is less felt at the boundary between the exposure areas 113 and 115 , and the person feels that the display quality of the liquid crystal display has improved, and thus the image quality of the liquid crystal display is improved.

As described above, the COT type liquid crystal display device of the present invention uses an exposure mask (120 in FIG. 6F ) including a shift exposure unit (125 in FIG. 3B ) to obtain R, G, B color filter patterns 117a, 117b, By forming 117c, 119a, 119b, and 119c), the reflection luminance and cell gap defects are dulled in the vicinity of the boundary of the exposure areas 113 and 115, so that human vision is recognized at the boundary of the exposure areas 113 and 115 in the divided exposure process. The sex feels ambiguous and less prone to stitch stain defects such as band stains.

Accordingly, the person feels that the display quality of the liquid crystal display is improved.

In addition, the exposure process using the exposure mask (120 in FIG. 6F ) of the present invention improves the stitch defects at the boundary of the exposure areas 113 and 115 while exposing the first and second exposure areas 113 and 115. Since only the exposure process by a single shot is required, the number of shots can be reduced compared to the existing Lego exposure method, and the process time can be reduced, thereby improving the efficiency of the process.

-Third embodiment-

8 is a diagram schematically illustrating a divided exposure process of a liquid crystal display according to a third embodiment of the present invention, and schematically illustrates an exposure process for a substrate divided into first and second exposure areas.

As shown, the exposure mask 220 is placed on the upper portion of the substrate 211 defined by dividing the active area AA in which a plurality of pixels P are defined into first and second exposure areas 213 and 215 . The exposure mask 220 is positioned to correspond to the first exposure area 213 to be exposed.

That is, in order to manufacture the upper and lower substrates of the liquid crystal display, several exposure masks 220 are used and the same number of exposure processes are performed. As the size of the substrate increases, the substrate 211 is also used when patterning one layer. It will be partially exposed.

Here, in the exposure process, for example, when R, G, and B color filter patterns are to be formed on the substrate 211, R, G, and B color pigments are sequentially applied on the substrate 211, respectively, and then to be formed. The exposure mask 220 on which the pattern corresponding to the R, G, and B color filter patterns is formed is aligned on the substrate 211 coated with the R, G, and B color pigments, and is passed through the exposure mask 220 . By irradiating light on the substrate 211, the pigment is selectively irradiated with light.

Accordingly, R, G, and B color filter patterns are formed on the substrate 211 . As liquid crystal display devices to be developed recently have a larger area, such an exposure mask 220 has a larger size than the substrate 211 . Since the area is quite small compared to the area, in order to form patterns on the entire surface of the substrate 211 , the active area AA of the substrate 211 is divided into a plurality of areas 213 and 215 , and then each of the areas 213 and 215 is formed. It is necessary to perform divided exposure in which exposure is performed through a plurality of shots in turn.

Accordingly, the active area AA on the substrate 211 is divided into first and second exposure areas 213 and 215 to perform divided exposure, and the exposure mask 220 is first exposed to the first exposure area 213 . ) is located in correspondence with

When the exposure process by the first shot of the first exposure area 213 is completed using the exposure mask 220 formed to correspond to the first exposure area 213 , the exposure mask 220 is formed on the second exposure area 215 . ) so that the exposure process by the second shot of the second exposure area 215 is performed.

Here, the exposure mask 220 includes a plurality of exposure portions 221 to which light is irradiated corresponding to the pixels P defined in the active area AA on the substrate 211 , and the plurality of exposure portions 221 . A blocking part (not shown) and a transmission part (not shown) are configured in each of them to selectively transmit or block light according to the shape of a desired pattern, so that several patterns are displayed in the exposure areas 213 and 215 of the substrate 211 . to form

In this case, the exposure mask 220 of the present invention is characterized in that the shift region 223 is formed in a region corresponding to the interface between the first exposure region 213 and the second exposure region 215 .

Here, in the shift region 223, some of the exposure portions (hereinafter referred to as shift exposure portions) 225a among the plurality of exposure portions 221 are randomly moved in the row direction (±X-axis direction defined in the drawing) at regular intervals. Also, some shift-exposed portions 225b are randomly moved in the column direction (±Y-axis direction defined in the drawing) at regular intervals.

Here, the shift-exposed part formed by being moved at regular intervals in the row direction (±X-axis direction defined in the drawing) is defined as the first shift-exposed part 225a, and is constant in the column direction (±Y-axis direction defined in the drawing). A shift exposure portion formed by being moved at intervals will be defined as a second shift exposure portion 225b.

Accordingly, the first and second shift exposure portions 225a and 225b are formed not to be accurately aligned with the pixel P defined in the active area AA on the substrate 211 .

Through this, when the first exposure area 213 is exposed using the exposure mask 220 , the first and second shift exposure units are located near the interface between the first exposure area 213 and the second exposure area 215 . Some of the patterns patterned by 225a and 225b and formed on the substrate 211 move at regular intervals from the pixel P defined on the substrate 211 in the row direction (±X-axis direction defined in the drawing). In addition, some patterns are formed by moving at regular intervals in the column direction (±Y-axis direction defined in the drawing) from the pixels defined on the substrate.

Accordingly, the patterns formed by being patterned by the first and second shift exposure units 225a and 225b are formed to overlap with the patterns formed in the neighboring pixels P in the row direction or the column direction, or have a gap therebetween. opened and formed.

Then, when the second exposure region 215 is exposed, the vicinity of the interface between the first exposure region 213 and the second exposure region 215 is also patterned by the first and second shift exposure parts 225a and 225b to the substrate. A pattern formed on the substrate 211 is spaced from the pixel P defined on the substrate 211 in a row direction (±X-axis direction as defined in the drawing) or column direction (±Y-axis direction as defined in the drawing) at regular intervals. moved and formed.

As a result, stitch defects are improved in the vicinity of the interface between the first exposure area 213 and the second exposure area 215 , thereby improving the image quality of the liquid crystal display.

In particular, in the COT type liquid crystal display device in which a black matrix is not formed by using the exposure mask 120 including the first and second shift exposure portions 225a and 225b according to the third embodiment of the present invention, R, G When the , B color filter pattern is formed, it is possible to further improve stitch defects occurring in the vicinity of the interface between the first and second exposure areas 213 and 215 even in a non-driving state in which the liquid crystal panel is not driven.

This will be described in more detail with reference to FIG. 9 .

9 is a schematic diagram schematically illustrating a color filter pattern formed through an exposure mask according to a third embodiment of the present invention for each pixel, and FIG. 10 is a schematic diagram illustrating improvement in stitch defects.

As shown in FIG. 9 , R, G, and B colors are placed on the substrate 211 using an exposure mask ( 220 in FIG. 8 ) including first and second shift exposure units ( 225a and 225b in FIG. 8 ). When the filter patterns 216a, 216b, and 216c are formed, some R, G, and B color filter patterns 217a, 217b, and 217c formed near the boundary between the first exposure area 213 and the second exposure area 215 are formed. ) is formed by being moved at regular intervals in the row direction (±X-axis direction defined in the drawing) from the pixel P by the first shift exposure unit (225a in FIG. 8).

In addition, some of the R, G, and B color filter patterns 218a, 218b, and 218c are in the column direction (±Y-axis direction defined in the drawing) from the pixel P by the second shift exposure unit (225b in FIG. 8). It is formed by moving at regular intervals.

Accordingly, the R, G, and B color filter patterns 217a, 217b, 217c, 218a, 218b, and 218c formed by the first and second shift exposure units (225a and 225b in FIG. 8) are moved in the row direction or column direction. It is formed to overlap with the R, G, and B color filter patterns 216a, 216b, and 216c formed in the neighboring pixels P positioned in the direction, or to be formed with a gap therebetween.

Accordingly, in the vicinity of the interface between the first exposure area 213 and the second exposure area 215 , the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c are shown. Since the overlapping region and the non-overlapping region having an open region coexist, light having various reflection angles is reflected.

Accordingly, stitch defects occurring in the vicinity of the interface between the first exposure area 213 and the second exposure area 215 are improved.

Looking at this in more detail, the human eye's visual perception is very sensitive in recognizing regular pattern arrangement and luminance difference.

At this time, when one color filter pattern among the R, G, and B color filter patterns 216a, 216b, and 216c is exposed in one exposure area 213 and 215, the exposure areas 213 and 215 are exposed to light. One color filter pattern 216a, 216b, 216c to be formed is formed to overlap all neighboring color filter patterns in the lateral direction (±X-axis direction defined in the drawing) or to have the same open area. .

As described above, when one color filter pattern all overlaps with the neighboring color filter patterns or is formed to have an open area, other color filter patterns are also formed to overlap all the neighboring color filter patterns or have an open area.

Accordingly, the R, G, and B color filter patterns 216a, 216b, and 216c formed in the plurality of pixels P positioned in the first exposure area 213 are respectively the R, G, and B color filter patterns 216a and 216b. , 216c) have the same open area or overlap each other, the light incident from the outside from the first exposure area 213 is reflected to have only an average reflection angle according to the R, G, and B colors. .

Then, each of the R, G, and B color filter patterns 216a and 216b of the R, G, and B color filter patterns 216a, 216b, and 216c formed in the plurality of pixels P positioned in the second exposure area 215 . , 216c) are formed to overlap or open, the light incident from the outside from the second exposure area 215 has different R, G, and B colors from the average reflection angle of the first exposure area 213 . It has an average reflection angle according to

That is, only the R-ⓐ reflection angle, the G-ⓑ reflection angle, and the B-ⓑ reflection angle are reflected from the first exposure area 213 , and the R-ⓑ reflection angle and the G-ⓐ reflection angle are reflected from the second exposure area 215 . Only the angle of reflection B-ⓐ will be reflected.

(Here, ⓐ denotes the reflection angle reflected when neighboring R, G, and B color filter patterns are overlapped, and ⓑ denotes an open region between the neighboring R, G, and B color filter patterns. It represents the angle of reflection.)

Accordingly, the human visual perception recognizes light having different reflection angles according to R, G, and B colors that are clearly different at the interface between the first exposure area 213 and the second exposure area 215, so that the regular Due to the pattern arrangement and the luminance difference, the human eye's visual recognition is very sensitive to stitch defects such as band spots at the interface between the first and second exposure areas 213 and 215 .

Further, in the region between the pixels P adjacent to each other in the column direction (±Y-axis direction defined in the drawing), the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b , 218c) are formed overlapping each other, and on the upper substrate (not shown) corresponding to the region, a column spacer (in FIG. 7b ) for maintaining a gap between the lower substrate 111 and the upper substrate (not shown) 118) is constructed.

Here, as exposure processes by different shots are performed on the first and second exposure areas 213 and 215 , R, G, and B formed in the first exposure area 213 and the second exposure area 215 . A height difference between the color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c occurs.

When the height difference between the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c occurs, the column spacer (118 in FIG. 7b) formed on the upper substrate (not shown) and A spaced region exists between the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c. Since the amount of liquid crystal varies between regions of , cell gap defects occur due to the difference in luminance due to the difference in the amount of liquid crystal during electric field driving.

Here, the difference in height of the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c in one exposure area 213 and 215 is the same. , such a gap defect has a difference for each exposure area 213 and 215 , and through this, the human eye recognizes it as a regular pattern arrangement and a luminance difference.

That is, when a cell gap defect does not occur in the first exposure area 213 and a cell gap defect occurs in the second exposure area 215 , the human eye's visual recognition is very sensitive to this, and the gap between the exposure areas 213 and 215 is very sensitive. At the boundary of , a stitch defect due to cell gap non-uniformity is felt.

On the other hand, the visual recognition of the human eye is very sensitive to regular pattern arrangement and luminance difference, but it is felt relatively low in the recognition of a pattern that changes slowly over a wide range. Therefore, the ambiguity of the visual recognition of the human eye The quality of the liquid crystal display can be improved by making defects caused by display stains less conspicuous by using .

That is, as in the third embodiment of the present invention, as shown in FIG. 10, the substrate 211 using an exposure mask (220 in FIG. 8) having the first and second shift exposure portions (225a and 225b in FIG. 8). When the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c are formed on the Even after exposure, the R, G, B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, which are formed in the respective exposure areas 213 and 215 by the first shift exposure unit (225a in FIG. 8), One of the color filter patterns 218b and 218c) is formed to be mixed so that an area between the color filter patterns and the neighboring color filter patterns is opened or overlapped.

In addition, the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b in one exposure area 213 and 215 by the second shift exposure unit (225b in FIG. 8). , 218c) is different, and spaced between the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, 218c in each exposure area 213 and 215 A plurality of regions having a cell gap difference in which the region (D of FIG. 7B ) exists or does not exist is formed.

Accordingly, the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c formed in the lateral direction near the boundary surface of the first and second exposure regions 213 and 215 . R, G, and B color filters formed to correspond to the first shift exposure part (225a in FIG. 8) while the regions between the R, G, and B color filter patterns 216a, 216b, and 216c are opened or overlapped. As the patterns 217a, 217b, and 217c are moved in the row direction (±X-axis direction defined in the drawing), some R, G, and B color filter patterns 217a, 217b, and 217c are also formed with overlapping regions. or open to form a mixture of each other.

That is, a region between the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, and 217c is opened near the interface between the first and second exposure regions 213 and 215, or the R, G, A plurality of regions formed by overlapping the B color filter patterns 216a, 216b, 216c, 217a, 217b, and 217c are generated and randomly arranged.

Accordingly, in the vicinity of the boundary surface of the first and second exposure areas 213 and 215 , a region between the R, G, and B color filter patterns 216a, 216b, 216c, 217a, 217b, and 217c is opened or formed to overlap. From the first exposure area 213, in addition to the average reflection angle of only R-ⓐ reflection angle, G-ⓑ reflection angle, and B-ⓑ reflection angle, light having R-ⓑ reflection angle, G-ⓐ reflection angle, and B-ⓐ reflection angle by are reflected together, and also from the second exposure area 215, light having R-ⓐ reflection angle, R-ⓑ reflection angle, G-ⓐ reflection angle, G-ⓑ reflection angle, B-ⓐ reflection angle, and B-ⓑ reflection angle are reflected together. .

Accordingly, in the vicinity of the interface between the first and second exposure areas 213 and 215 , the number of reflection angles increases to dull the sense of reflection, so that the person's visual perception becomes ambiguous, and stitch defects such as band spots are less felt.

Accordingly, since the person feels that the display quality of the liquid crystal display has improved, the image quality of the liquid crystal display is improved.

In addition, the R, G, B color filter patterns 218a, 218b, and 218c formed near the boundary surface of the first and second exposure areas 213 and 215 in the column direction (±Y-axis direction defined in the drawing) are columnar. The spacer (118 in FIG. 7b) and the spaced area (118 in FIG. 7b) exist or are formed by moving in the column direction (±Y-axis direction defined in the drawing), so that the column spacer (118 in FIG. 7b) and the spaced area ( Regions where D) of FIG. 7B do not exist are mixed and formed.

Therefore, the cell gap defect caused by the spaced area (D of FIG. 7B) between the column spacer (118 in FIG. 7B) and the R, G, and B color filter patterns 218a, 218b, and 218c occurs in the first exposure area 213 and the second exposure area. 2 By allowing the occurrence of multiple areas over the exposure area 215 , the cell gap defect is slowed down to the human eye, so that the person's visual recognition becomes ambiguous, thereby reducing stitch defects such as band spots.

Accordingly, since the person feels that the display quality of the liquid crystal display has improved, the image quality of the liquid crystal display is improved.

Here, the first and second shift exposure portions (225a and 225b in FIG. 8 ) of the exposure mask ( 220 in FIG. 8 ) have a shift interval of ±1 to ±5 μm from the pixel P defined on the substrate 211 . The color filter patterns 217a, 217b, 217c, 218a, 218b, and 218c formed by the first and second shift exposure units (225a, 225b in FIG. 8) are formed so as to have Preferably, the color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c are spaced apart from or overlapped with the adjacent color filter patterns 216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, and 218c.

Further, as the boundary between the exposure areas 213 and 215 is approached, the shift interval between the first and second shift exposure units ( 225a and 225b in FIG. 8 ) increases or the first and second shift exposure units ( 225a in FIG. 8 ) increase. , 225b) is preferably formed to increase the ratio.

11 is a schematic diagram illustrating a shift interval of a shift exposure unit formed to correspond to an exposure area boundary.

As shown, the exposure mask 220 in FIG. 8 includes a shift region 123 including first and second shift exposure portions 225a and 225b in FIG. 8 , and the shift region 123 is an exposure mask. (220 in FIG. 8) can be defined by dividing by 5 on both sides.

At this time, the shift region 123 includes an exposure portion (hereinafter, referred to as an alignment exposure portion) that is precisely aligned with the pixel (P in FIG. 10) defined on the substrate (211 in FIG. 10) (221 in FIG. 8); The first shift exposure part (225a in FIG. 8) and the pixel ( and a second shift exposure part (225b in FIG. 8) formed by being moved from P of FIG. 10) to have a shift interval of ±1 to ±5 μm in the column direction (±Y-axis direction defined in the drawing).

Here, when the alignment exposure part (221 in FIG. 8) is expressed as 0 µm, the ratio of the alignment exposure part (221 in FIG. 8) becomes closer as the boundary between the first and second exposure areas 213 and 215 increases. Preferably, the shift interval and ratio gradually increase as the first and second shift exposure portions (225a and 225b in FIG. 8) get closer to the boundary between the first and second exposure areas 213 and 215. Do.

That is, when 540 pixels (P in FIG. 10 ) are defined in one exposure area 213 and 215 , the first shift area 223a located farthest from the boundary between the first and second exposure areas 213 and 215 . ), when 108 alignment exposure portions (221 in FIG. 8) are formed, the first and second shift exposure portions (225a and 225b in FIG. 8) each having a shift interval of ±1 μm in the horizontal and column directions are 216 It is formed to have one.

At this time, in the first and second shift exposure portions (225a and 225b in FIG. 8 ), 108 are formed to have a shift interval of +1 μm in the horizontal and column directions, and 108 are formed to have a shift interval of -1 μm in the horizontal and column directions. It is formed to have a shift interval of .

In addition, the first and second shift exposure units (225a and 225b in FIG. 8 ) and the alignment exposure units ( 221 in FIG. 8 ) are randomly positioned within the above number.

In addition, when 60 alignment exposure portions (221 in FIG. 8) are formed in the second shift region 223b adjacent to the first shift region 223a, the first shift region 223b having a shift interval of ±1 μm in the horizontal and column directions. Each of the first and second shift exposure units (225a and 225b in FIG. 8) is formed by 120 units, and the first and second shift exposure units (225a and 225b in FIG. 8) have a shift interval of ±2 μm in the lateral and column directions. 225b) is formed by 120 pieces.

In addition, when 44 alignment exposure portions (221 in FIG. 8) are formed in the third shift region 223c, the first first having shift intervals of ±1 μm, ±2 μm, and ±3 μm in the lateral and column directions. and 82 to 84 second shift exposure portions (225a and 225b in FIG. 8) are formed each, and 32 alignment exposure portions (221 in FIG. 8) are formed in the fourth shift region 223d, in the transverse direction and column The first and second shift-exposed portions (225a and 225b in FIG. 8) having shift intervals of ±1 μm, ±2 μm, ±3 μm, and ±4 μm in the direction are formed by 62 to 64 units.

In addition, when 28 alignment exposure portions (221 in FIG. 8) are formed in the fifth shift region 223e located closest to the boundary between the exposure regions 213 and 215, ±1 μm in the horizontal and column directions, The first and second shift exposure portions (225a and 225b in FIG. 8) having shift intervals of ±2㎛, ±3㎛, ±4㎛, and ±5㎛ are formed by 50 to 52 pieces.

Here, the width of the shift region 223, the number of divisions, and the number and ratio of the first and second shift exposure portions (225a and 225b in FIG. 8) and the alignment exposure portions (221 in FIG. 8) are the first And the exposure mask (220 in FIG. 8) including the second shift exposure unit (225a, 225b in FIG. 8) can be designed in various ways within the scope of the present invention without departing from the gist of the present invention.

12A to 12B are simulation results showing that the reflective visual sensation is improved through the exposure mask according to the embodiment of the present invention.

Here, FIG. 12A shows an exposure mask (220 in FIG. 8) including first and second shift exposure units (225a and 225b in FIG. 8) having shift intervals of ±1 μm, ±2 μm, and ±3 μm. , after forming R, G, and B color filter patterns (216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, 218c in FIG. 9) on the substrate (211 in FIG. 9), the level of reflection was measured. It is a simulation result, and Fig. 12b shows first and second shift exposure units (225a and 225b in Fig. 8) having shift intervals of ±1㎛, ±2㎛, ±3㎛, ±4㎛, ±5㎛ R, G, B color filter patterns (216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, 218c in Fig. 9) on the substrate (211 in Fig. 9) through the exposure mask (220 in Fig. 8) This is the simulation result of measuring the level of reflection after forming.

12A and 12B, R, G on a substrate (211 of FIG. 9) using an exposure mask (220 of FIG. 8) having first and second shift exposure units (225a, 225b of FIG. 8) , B color filter patterns (216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, 218c in FIG. 9) are formed using a general exposure mask to form the R, G, and B color filter patterns on the substrate. It can be seen that the level of reflection is remarkably improved compared to the case of forming.

Reflection when using an exposure mask (220 in FIG. 8) including first and second shift exposure units (225a and 225b in FIG. 8) having shift intervals of ±1 μm, ±2 μm, and ±3 μm in FIG. 12A The luminous level is about Lv0.3 improved compared to Lv2.7, which is the existing reflective luminous sensitivity level, to have Lv2.4, and ±1㎛, ±2㎛, ±3㎛, ±4㎛, ±5㎛ in Figure 12b When the exposure mask (220 in FIG. 8) including the first and second shift exposure units (225a and 225b in FIG. 8) having a shift interval of About Lv0.7 is improved to have Lv2.5, which means that the reflection level is improved by one level (ΔLv1).

In particular, after exposing the first exposure area 213 in FIG. 11 using the exposure mask 220 in FIG. 8 , the exposure mask 220 in FIG. 8 is moved to expose the second exposure area 215 in FIG. 11 . In the process, an overlay difference of the exposure mask ( 220 in FIG. 8 ) is generated corresponding to the second exposure area ( 215 in FIG. 11 ). According to the third embodiment of the present invention, the exposure mask ( FIG. 8 ) 220) includes the first and second shift exposure units (225a and 225b in FIG. 8) that are moved at regular intervals in the horizontal or column direction, so even if the exposure mask (220 in FIG. 8) is distorted, the level of reflection can be lowered.

As described above, the COT type liquid crystal display device of the present invention uses an exposure mask (220 in FIG. 8 ) including first and second shift exposure units (225a and 225b in FIG. 8 ) to provide R, G, and B colors. By forming filter patterns (216a, 216b, 216c, 217a, 217b, 217c, 218a, 218b, 218c in FIG. 9 ), light having various reflection angles is reflected near the boundary of the exposure area ( 213 and 215 in FIG. 11 ). Or, it can be formed to have various cell gaps, so that, in the divided exposure process, the human visual perception is dulled at the boundary of the exposure area (213 and 215 in FIG. 11), so that the human visual perception is ambiguous. Stitch defects such as band stains are less felt.

Accordingly, the person feels that the display quality of the liquid crystal display is improved.

In addition, the exposure process using the exposure mask (220 in FIG. 8) of the present invention improves the stitch defects at the boundary of the exposure areas (213 and 215 in FIG. 11) while improving the first and second exposure areas (213, 213 in FIG. 11) 215), since only an exposure process by two shots is required, the number of shots can be reduced compared to the existing Lego exposure method, and the process time can be reduced, thereby improving the efficiency of the process.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

111: substrate
113, 115: first and second exposure areas
117a, 117b, 117c, 119a, 119b, 119c : R, G, B color filter pattern
P: pixel

Claims (12)

In the exposure mask used in the exposure process located above the substrate to manufacture a liquid crystal display,
an alignment exposure unit including an exposure unit accurately aligned with the pixels on a substrate in which a first exposure area including a plurality of pixels and a second exposure area are defined;
A shift area including a first shift exposure part positioned at at least one edge of the alignment exposure part and randomly moved with a shift interval in a row direction or a column direction from the pixel defined on the substrate
is provided,
The shift region is an exposure mask for a liquid crystal display corresponding to one edge of the first exposure region adjacent to the second exposure region.
The method of claim 1,
The exposure mask for a liquid crystal display device, wherein the first shift exposure portion moved in the row direction is randomly formed in the shift region defined at left and right edges of the exposure mask in the row direction.
The method of claim 1,
An exposure mask for a liquid crystal display device in which the first shift exposure portion moved in the row direction is randomly formed over the entire surface of the exposure mask.
The method of claim 1,
An exposure mask for a liquid crystal display device in which the ratio according to the number of the first shift exposure parts moved in the row direction increases toward the edge of the row direction.
The method of claim 1,
An exposure mask for a liquid crystal display device in which the shift interval of the first shift exposure unit moved in the row direction increases toward an edge in the row direction.
6. The method of claim 5,
The shift interval is an exposure mask for a liquid crystal display of ±1 ~ ±5㎛.
An alignment exposure part including an exposure part precisely aligned with the pixel on an upper portion of a substrate defined by first and second exposure areas including a plurality of pixels, and at least one edge of the alignment exposure part. , locating an exposure mask in which a shift region including a shift exposure portion randomly moved with a shift interval in a row direction or a column direction from the pixel is defined;
performing a first exposure process through the exposure mask so that the shift area in the first exposure area corresponds to one edge of the first exposure area adjacent to the second exposure area;
moving the exposure mask to the second exposure area and performing a second exposure process through the exposure mask so that the shift area corresponds to one edge of the second exposure area adjacent to the first exposure area;
includes,
The R, G, and B color filter patterns formed by the shift region are formed by overlapping the edges of the R, G, and B color filter patterns formed in the neighboring pixels or spaced apart from each other by a predetermined distance. exposure method.
8. The method of claim 7,
When the shift exposure unit is moved in the column direction, the R, G, and B color filter patterns have a difference in height in a region between neighboring pixels in each column direction.
The method of claim 1,
The exposure mask for a liquid crystal display device further comprising a second shift exposure part corresponding to the other edge perpendicular to the one edge of the alignment exposure part.
10. The method of claim 9,
An exposure mask for a liquid crystal display device in which the first and second shift exposure portions are randomly formed in the shift regions defined at left and right edges of the exposure mask in a row direction.
10. The method of claim 9,
An exposure mask for a liquid crystal display device in which the number of the first and second shift exposure units increases toward an edge in a row direction.
The method of claim 1,
When the first shift exposure unit is moved in the column direction, the R, G, and B color filter patterns have a difference in height in a region between the pixels adjacent in each column direction.

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