KR102235599B1 - Laser annealing apparatus and method for manufacturing display apparatus using the same - Google Patents

Abstract

The present invention provides a laser beam annealing device capable of annealing a high-quality amorphous silicon layer by emitting a uniform laser beam, and a method of manufacturing a display device using the same, a master laser beam emitting unit capable of emitting a master laser beam, and the master laser A laser beam splitting unit capable of splitting the master laser beam emitted from the beam emitting unit into a plurality of master sub laser beams, and positioned on the paths of each of the plurality of master sub laser beams split by the laser beam splitting unit Thus, having a plurality of phase modulators capable of modulating the phase of the passing laser beam, and a laser beam merging unit for merging the laser beams passing through the plurality of phase modulators, a laser beam annealing apparatus and using the same It provides a method for manufacturing a display device.

Description

Laser annealing apparatus and method for manufacturing a display apparatus using the same TECHNICAL FIELD

Embodiments of the present invention relate to a laser beam annealing device and a method of manufacturing a display device using the same, and more particularly, a laser beam annealing device capable of annealing a high-quality amorphous silicon layer by emitting a uniform laser beam, and manufacturing a display device using the same It's about the method.

In general, an organic light emitting display device or a liquid crystal display device controls whether or not each pixel emits light using a thin film transistor. Such a thin film transistor includes a semiconductor layer, a gate electrode, a source/drain electrode, and the like, and a polysilicon crystallized from amorphous silicon is mainly used as the semiconductor layer.

When explaining the manufacturing process of a thin film transistor substrate having such a thin film transistor or a display device using the same, a thin film transistor substrate or a display device including the same is provided through a process of forming an amorphous silicon layer on the substrate and crystallizing it into Was prepared.

However, there is a problem in that it is not easy to uniformly crystallize amorphous silicon into polysilicon during the conventional manufacturing process. In manufacturing a display device, amorphous silicon must be crystallized into polysilicon at various locations on a substrate, and for this purpose, a laser beam is irradiated onto the amorphous silicon. In this case, when the irradiated laser beam has a non-uniform intensity, there is a problem that the crystallinity of the amorphous silicon layer may be different at various locations, and the crystallinity of the amorphous silicon layer may not be uniform even within a specific region.

The present invention is to solve various problems including the above problems, and an object of the present invention is to provide a laser beam annealing device capable of annealing a high-quality amorphous silicon layer by emitting a uniform laser beam, and a display device manufacturing method using the same. do. However, these problems are exemplary, and the scope of the present invention is not limited thereby.

According to an aspect of the present invention, a master laser beam emitter capable of emitting a master laser beam and a laser beam capable of splitting a master laser beam emitted from the master laser beam emitter into a plurality of master sub laser beams A split unit, a plurality of phase modulators positioned on the paths of each of the plurality of master sub laser beams split by the laser beam splitting unit and capable of modulating a phase of a passing laser beam, and the plurality of phases A laser beam annealing apparatus is provided having a laser beam merging unit for merging laser beams that have passed through modulators.

In this case, a slave laser beam emission unit capable of emitting a slave laser beam may be further provided, and the laser beam splitting unit may split the slave laser beam emitted from the slave laser beam emission unit into a plurality of slave sub laser beams, The plurality of slave sub laser beams split by the laser beam splitting unit may pass through the plurality of phase modulators.

Further, the laser beam splitting unit splits the master laser beam emitted from the master laser beam emitter into n master sub laser beams, and the slave laser beam emitted from the slave laser beam emitter is divided into n slave sub lasers. The beams are split, and n master sub laser beams and n slave sub laser beams are merged in a one-to-one correspondence to emit n sub laser beams.

In addition, the plurality of phase modulators may include a first phase modulator to an n-th phase modulator, and the first to n-th phase modulators may be positioned on an optical path of n sub laser beams.

Meanwhile, an additional splitting unit for emitting nXk sub laser beams by splitting each of the n sub laser beams passing through the laser beam splitting unit into k sub laser beams may be further provided (K: a natural number greater than or equal to 2).

In this case, the plurality of phase modulators may include a first phase modulator to an nXk th phase modulator, and the first to nXk th phase modulators may be located on the optical path of nXk sub laser beams.

At least one of the plurality of phase modulators may include a laser beam passing medium and a vibration unit capable of vibrating the laser beam passing medium. In this case, the laser beam passing medium may include at least one of sapphire and quartz.

Alternatively, the vibration unit may include a piezo actuator.

At least one of the plurality of phase modulators may include a dove prism.

According to another aspect of the present invention, forming an amorphous silicon layer on a substrate, and irradiating the amorphous silicon layer with a laser beam emitted from at least one of the above-described laser beam annealing devices to form a polycrystalline silicon layer. A method of manufacturing a display device is provided, including converting and forming a display device.

Other aspects, features, and advantages other than those described above will become apparent from the detailed contents, claims, and drawings for carrying out the following invention.

According to an embodiment of the present invention made as described above, it is possible to implement a laser beam annealing device capable of annealing a high-quality amorphous silicon layer by emitting a uniform laser beam, and a method of manufacturing a display device using the same. Of course, the scope of the present invention is not limited by these effects.

1 is a conceptual diagram schematically showing a part of a laser annealing apparatus according to an embodiment of the present invention.
FIG. 2 is a conceptual diagram schematically showing another part of the laser annealing apparatus of FIG. 1.
3 is a conceptual diagram schematically showing a part of the laser annealing apparatus of FIG. 1.
4 is a conceptual diagram schematically showing a part of the laser annealing apparatus of FIG. 1.
5 is a conceptual diagram schematically showing a part of a laser annealing apparatus according to another embodiment of the present invention.
6 is a conceptual diagram schematically showing a part of a laser annealing apparatus according to another embodiment of the present invention.
7 is a cross-sectional view schematically illustrating a part of a display device manufactured according to a method for manufacturing a display device according to an exemplary embodiment of the present invention.

Since the present invention can apply various transformations and have various embodiments, specific embodiments are illustrated in the drawings and will be described in detail in the detailed description. Effects and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the drawings. However, the present invention is not limited to the embodiments disclosed below and may be implemented in various forms.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the drawings, the same or corresponding constituent elements are assigned the same reference numerals, and redundant descriptions thereof will be omitted. .

In the following embodiments, when various components such as layers, films, regions, and plates are said to be "on" other components, this is not only a case where other components are "directly on", but other components are interposed therebetween. It includes cases that have been made. In addition, in the drawings for convenience of description, the size of the components may be exaggerated or reduced. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, and thus the present invention is not necessarily limited to what is shown.

In the following embodiments, the x-axis, y-axis, and z-axis are not limited to three axes on a Cartesian coordinate system, and may be interpreted in a broad sense including them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may refer to different directions that are not orthogonal to each other.

1 is a conceptual diagram schematically showing a part of a laser annealing apparatus according to an embodiment of the present invention. The laser annealing apparatus according to the present embodiment includes a master laser beam emission unit (MLE), a laser beam split unit (BSU), a phase modulation unit (PMU), and a laser beam merge unit (not shown).

The master laser beam emitter MLE may emit a master laser beam MLB. The master laser beam MLB emitted by the master laser beam emitter MLE may be, for example, a laser beam having a wavelength of 308 nm. The master laser beam (MLB) may be modulated and then irradiated onto amorphous silicon to crystallize it into polysilicon.

The laser beam splitting unit BSU may split the master laser beam MLB emitted from the master laser beam emitting unit MLE into a plurality of master sub laser beams MSLB1 and MSLB2. In FIG. 1, the laser beam splitting unit BSU is illustrated as having a first reflecting unit M1, a first beam splitter BS1, and a second reflecting unit M2, but the present invention is not limited thereto. . Of course, if necessary, the first reflecting unit M1 and/or the second reflecting unit M2 are not components of the laser beam split unit BSU, but are separate components. Of the one beam splitter BS1 and the second reflecting portion M2, only the first beam splitter BS1 may be regarded as a component of the laser beam splitting portion BSU.

1, the first reflecting unit M1 of the laser beam splitting unit BSU converts the master laser beam MLB emitted from the master laser beam emitting unit MLE into a first beam splitter BS1. It reflects toward. The first beam splitter BS1 is, for example, a transflective plate, and transmits a part of the incident master laser beam MLB and reflects the other part. The part of the master laser beam MLB that has passed through the first beam splitter BS1 is reflected by the second reflecting part M2, and is approximately equal to the part reflected by the first beam splitter BS1 of the master laser beam MLB. You can make it go in the same direction. As a result, a portion reflected by the first beam splitter BS1 and a portion reflected by the second reflecting portion M2 may be understood as a master sub laser beam MSLB1 and a master sub laser beam MSLB2, respectively.

In FIG. 1, the laser beam splitting unit BSU converts the master laser beam MLB emitted from the master laser beam emission unit MLE into two master sub laser beams, a first master sub laser beam MSLB1 and a second master sub laser beam. Although it is shown to be split by the laser beam MSLB2, the present invention is not limited thereto. Hereinafter, for convenience, a case in which the laser beam splitting unit BSU splits the master laser beam MLB emitted from the master laser beam emitting unit MLE into two master sub laser beams MSLB1 and MSLB2 will be described.

The phase modulator PMU may include a plurality of phase modulators PM1 and PM2. In FIG. 1, it is shown that the phase modulator PMU includes two phase modulators PM1 and PM2 equal to the number of master sub laser beams MSLB1 and MSLB2. The phase modulators PM1 and PM2 are positioned on the paths of each of the plurality of master sub laser beams MSLB1 and MSLB2 split by the laser beam splitting unit BSU. The phase modulators PM1 and PM2 may modulate a phase of a laser beam passing through them.

The master sub laser beams MSLB1 and MSLB2 have the same/similar phase since the master laser beam MLB emitted from the master laser beam emission unit MLE is split. However, since the master sub laser beams MSLB1 and MSLB2 pass through different phase modulators PM1 and PM2, the master sub laser beams MSLB1 ′ and MSLB2 after passing through the phase modulators PM1 and PM2. ') may have different phases. Therefore, the master sub laser beams after passing through the phase modulators PM1 and PM2 are controlled by controlling the degree of modulating the phase of the master sub laser beams MSLB1 and MSLB2 passing through the phase modulators PM1 and PM2. The phase difference of (MSLB1', MSLB2') can be adjusted.

FIG. 2 is a conceptual diagram schematically showing another part of the laser annealing apparatus of FIG. 1, and may be understood as a laser beam merging unit of the laser annealing apparatus according to the present embodiment. As shown in FIG. 2, the laser beam merge unit merges the master sub laser beams MSLB1 ′ and MSLB2 ′ after passing through the phase modulators PM1 and PM2 to emit one laser beam. To this end, as shown in FIG. 2, the laser beam merge unit is the optical element OP1 to which the master sub laser beams MSLB1 ′ and MSLB2 ′ after passing through the phase modulators PM1 and PM2 are incident, or It may include a main reflecting unit (MM) for reflecting the laser beams as one laser beam. Of course, one laser beam reflected from the main reflecting unit MM may pass through various optical elements (not shown) as necessary, and then irradiated to amorphous silicon to crystallize it into polysilicon.

In the case of a conventional laser beam annealing apparatus, there is a problem in that it is not easy to uniformly crystallize amorphous silicon into polysilicon. This is because the intensity of the laser beam irradiated to the amorphous silicon is not uniform.

However, the laser beam annealing apparatus according to the present embodiment controls the degree of modulating the phase of the master sub laser beams MSLB1 and MSLB2 through which the phase modulators PM1 and PM2 pass, thereby controlling the phase modulators PM1 and PM2. The phase difference of the master sub laser beams MSLB1 ′ and MSLB2 ′ after passing through may be adjusted. Through this, when the master sub laser beams (MSLB1', MSLB2') after passing through the phase modulators (PM1, PM2) are merged to form one laser beam, the laser beam has a uniform intensity in the irradiated area. The laser beam can be irradiated. For example, the intensity distribution of the master sub laser beam MSLB1' and the intensity distribution of the master sub laser beam MSLB2' after passing through the phase modulators PM1 and PM2 are different. As a result, the laser beam after the merge is It is possible to have a uniform intensity distribution over the entire area.

3 is a conceptual diagram schematically showing a part of the laser annealing apparatus of FIG. 1. The phase modulator PM1 may include a laser beam passing medium through which the laser beam passes and a vibration unit capable of vibrating the laser beam. In this case, by controlling the degree of vibration of the laser beam passing medium, the phase of the master sub laser beam MSLB1 before passing through the phase modulator PM1 and the phase of the master sub laser beam MSLB2 after passing through the phase modulator PM1 can be made different. , The different degrees can also be adjusted.

The laser beam passing medium may be formed of a material capable of passing a laser beam having a wavelength of 308 nm, for example. The laser beam passing medium may include, for example, at least one of sapphire and quartz. The vibrating unit for vibrating the medium passing through the laser beam may include, for example, a piezo actuator. Piezo actuators generate vibration by rapidly reducing/expanding their volume according to an electrical signal, and the vibration frequency can be effectively and precisely controlled by controlling changes in the electrical signal. In addition, since its volume is small, when configuring the laser annealing device as illustrated in FIG. 1, the laser annealing device can be simply configured without significantly increasing the size of the laser annealing device.

The vibration unit can vibrate the laser beam passing medium. As shown in FIG. 3, the vibration unit is perpendicular to the traveling direction of the laser beam (+z direction) and the length direction (+x direction) of the laser beam passing medium and passing through the laser beam. The laser beam passing medium can be shaken left and right around the axis (y-axis). Of course, the present invention is not limited thereto, and the vibration unit may change the position of the laser beam passing medium alternately in the +z direction and the -z direction while the position on the x-axis is fixed, and the position may be changed. The position can be changed by alternating in the +x direction and -x direction while the position is fixed.

4 is a conceptual diagram schematically showing a part of the laser annealing apparatus of FIG. 1. The phase modulator PM1 may include a laser beam passing medium through which the laser beam passes, and a vibration unit capable of vibrating the laser beam passing medium, and the laser beam passing medium may include, for example, a dob prism. A dove prism is, for example, capable of inverting an image of incident light by 180 degrees to emit it. As the phase modulator PM1 is equipped with a dove prism, a laser beam that has passed through the dove prism and a laser beam that has not passed through the dove prism As the fields are merged, a laser beam having a uniform dispersion can be implemented. Alternatively, all laser beams pass through the dove-prisms, but the dove-prisms are vibrated at different frequencies by the vibrating units, so that laser beams that have passed through the dove-prisms are merged, thereby realizing a laser beam having a uniform dispersion.

5 is a conceptual diagram schematically showing a part of a laser annealing apparatus according to another embodiment of the present invention. Unlike the laser annealing apparatus described above with reference to FIG. 1, the laser annealing apparatus according to the present embodiment further includes a slave laser beam emission unit SLE. The slave laser beam emitter SLE may emit a slave laser beam SLB. In this case, the laser beam splitting unit BSU may split the slave laser beam SLB emitted from the slave laser beam emitting unit SLE into a plurality of slave sub laser beams SSLB1 and SSLB2. In addition, the plurality of slave sub laser beams SSLB1 and SSLB2 split by the laser beam splitting unit BSU pass through the plurality of phase modulators PM1 and PM2.

In FIG. 5, the laser beam splitting unit BSU includes a third reflecting unit M3 and a fourth reflecting unit M4 in addition to the first reflecting unit M1, the first beam splitter BS1, and the second reflecting unit M2. Although shown as further comprising, the present invention is not limited thereto. Of course, if necessary, at least some of the first to fourth reflecting units M1 to M4 are not components of the laser beam splitting unit BSU, but are separate components, and the first reflecting unit M1 Of the fourth reflecting unit M4 and the first beam splitter BS1, only the first beam splitter BS1 may be regarded as a component of the laser beam splitting unit BSU.

5, the third reflecting unit M3 of the laser beam splitting unit BSU converts the slave laser beam SLB emitted from the slave laser beam emitting unit SLE into a fourth reflecting unit M4. It reflects toward. The fourth reflecting unit M4 reflects the incident slave laser beam SLB toward the first beam splitter BS1. The first beam splitter BS1 is, for example, a transflective plate, and transmits a part of the incident slave laser beam SLB and reflects the other part. The part reflected by the first beam splitter BS1 of the slave laser beam SLB is reflected by the second reflecting part M2, and is approximately equal to the part transmitted by the first beam splitter BS1 of the slave laser beam MLB. You can make it go in the same direction. As a result, a portion reflected from the first beam splitter BS1 and a portion reflected from the second reflective portion M2 may be understood as a slave sub laser beam SSLB1 and a master sub laser beam SSLB2, respectively.

In FIG. 5, it is shown that the laser beam splitting unit BSU splits the slave laser beam SLB emitted from the slave laser beam emitting unit SLE into two slave sub laser beams SSLB1 and SSLB2. The invention is not limited thereto. Hereinafter, for convenience, a case in which the laser beam split unit BSU splits the slave laser beam SLB emitted from the slave laser beam emission unit SLE into two slave sub laser beams SSLB1 and SSLB2 will be described.

The laser beam splitting unit (BSU) splits the master laser beam (MLB) emitted from the master laser beam emission unit (MLE) into n master sub laser beams, and is a slave emitted from the slave laser beam emission unit (SLE). The laser beam SLB is split into n slave sub laser beams, and n sub laser beams may be emitted by merging the n master sub laser beams and n slave sub laser beams in a one-to-one correspondence. In addition, the phase modulator PMU may include a first phase modulator to an nth phase modulator, and the first to nth phase modulators may be located on the optical paths of the n sub laser beams. In the case of FIG. 5, it can be understood as a case of n=2.

In FIG. 5, the master sub laser beam MSLB1 and the slave sub laser beam SSLB1 reflected from the first beam splitter BS1 or after passing through the first beam splitter BS1 are shown as being divided, and the first The slave sub laser beam SSLB2 and the master sub laser beam MSLB2 reflected from the beam splitter BS1 or after passing through the first beam splitter BS1 are shown as being separated, but this is shown as such for convenience. Only. That is, the master sub laser beam MSLB1 and slave sub laser beam SSLB1 reflected from the first beam splitter BS1 or after passing through the first beam splitter BS1 are immediately merged to become one sub laser beam. It can enter the phase modulator (PMU), and the slave sub laser beam (SSLB2) and master sub laser beam (MSLB2) after being reflected from the first beam splitter BS1 or passing through the first beam splitter BS1 are also It is merged immediately to become one sub laser beam and can enter the phase modulator (PMU). Accordingly, the two sub laser beams enter the first phase modulator PM1 and the second phase modulator PM2, respectively, and the phase is modulated. Such an illustration for convenience is also the same in the following.

Of course, after passing through the phase modulator PMU as described above, the sub laser beams may be merged in the laser beam merge unit as shown in FIG. 2.

The laser annealing apparatus according to this embodiment uses a master laser beam (MLB) and a slave laser beam (SLB) emitted from the master laser beam emitter (MLE) and the slave laser beam emitter (SLE). Since a laser beam that is finally irradiated to amorphous silicon is formed by using a master laser beam (MLB) and a slave laser beam (SLB) having a phase/intensity distribution, the distribution of the laser beam irradiated to the amorphous silicon is finally uniform. I can. Of course, each of the master laser beam (MLB) and the slave laser beam (SLB) is split and phase-modulated in the same/similar manner as the master laser beam (MLB) of FIG. The distribution of can be made very uniform.

6 is a conceptual diagram schematically showing a part of a laser annealing apparatus according to another embodiment of the present invention. As shown in FIG. 6, the laser annealing apparatus according to the present exemplary embodiment further includes an additional split unit ABSU unlike the laser annealing apparatus according to the exemplary embodiment described above with reference to FIG. 5. The additional split unit ABSU splits each of the n sub laser beams passing through the laser beam split unit BSU into k sub laser beams to emit nXk sub laser beams. In FIG. 6, when n=2 and k=2, each of the two sub laser beams passing through the laser beam splitting unit BSU is split into two sub laser beams to emit four sub laser beams. It is shown as doing.

To this end, the additional split unit ABSU may include a second beam splitter BS2, a fifth reflecting unit M5, a third beam splitter BS3, and a sixth reflecting unit M6. The additional split unit ABSU may be a separate component distinguished from the laser beam split unit BSU, as shown in FIG. 6, and in some cases, at least a part of the additional split unit ABSU may be a laser beam splitting unit. It may be integrated with the unit (BSU).

The phase modulator PMU includes a first phase modulator to an nXk th phase modulator, and the first to nXk th phase modulators may be located on an optical path of nXk sub laser beams. In FIG. 6, it is shown that the phase modulator PMU includes four phase modulators of the first to fourth phase modulators PM1 to PM4.

In this way, the master laser beam (MLB) and slave laser beam (SLB) emitted from the master laser beam emitter (MLE) and slave laser beam emitter (SLE) are split, merged, and split again, and then passed through the phase modulators. Then, by merging them in the laser beam merging unit, the distribution of the laser beam finally irradiated to the amorphous silicon can be made very uniform.

The laser beam annealing apparatus described so far can be used for manufacturing a display device, and a method for manufacturing such a display device is also within the scope of the present invention. 7 is a cross-sectional view schematically showing a part of an organic light emitting display device as a display device manufactured by such a manufacturing method.

On the substrate 110, a common layer such as the buffer layer 105, the gate insulating film 130, and the interlayer insulating film 150 may be formed on the entire surface of the substrate 110, and the amorphous silicon region 120 and polysilicon A semiconductor layer including the region 120a may also be formed on the entire surface of the substrate 110. In addition, a thin film transistor (TFT) having the polysilicon region 120a of the semiconductor layer as an active layer and including the gate electrode 140, the source electrode 161, and the drain electrode 162 may be formed on the substrate 110. have. Of course, if necessary, the amorphous silicon region 120 may not exist, and only the polysilicon region 120a may be present. This may be obtained by crystallizing all the amorphous silicon layers and then patterning them, or may be obtained by removing at least a portion of the polysilicon region and removing the remainder.

In addition, a passivation layer 170 covering the thin film transistor TFT and a planarization layer 180 positioned on the passivation layer 170 and having a substantially flat top surface may be formed on the entire surface of the substrate 110. On the planarization layer 180, the patterned pixel electrode 210, the counter electrode 230 substantially corresponding to the front surface of the substrate 110, and the pixel electrode 210 are interposed between the counter electrode 230 and include a light emitting layer. The organic light emitting device 200 including the intermediate layer 220 having a multi-layered structure may be formed to be positioned. Of course, the intermediate layer 220 may be a common layer substantially corresponding to the entire surface of the substrate 110, and some of the intermediate layer 220 may be a patterned layer patterned to correspond to the pixel electrode 210, unlike the illustration. The pixel electrode 210 may be electrically connected to the thin film transistor TFT through a via hole. Of course, a pixel definition layer 190 covering an edge of the pixel electrode 210 and having an opening defining each pixel region may be formed on the planarization layer 180 so as to substantially correspond to the entire surface of the substrate 110.

In this case, the polysilicon region 120a may be formed by the laser annealing apparatuses according to the above-described embodiments.

The organic light-emitting display device having such a structure crystallizes amorphous silicon into polysilicon by a uniformly distributed high-quality laser beam during the laser annealing process during its manufacture, thereby improving the manufacturing yield of the high-quality organic light-emitting display device and reducing the manufacturing time. It can be shortened.

Of course, the present invention is not limited to and applied to an organic light emitting display device. For example, a display device having a thin film transistor having polysilicon as an active layer, such as a liquid crystal display device, will fall within the scope to which the present invention can be applied.

As described above, the present invention has been described with reference to the embodiments shown in the drawings, but these are only exemplary, and those of ordinary skill in the art will understand that various modifications and equivalent other embodiments are possible therefrom. . Therefore, the true technical protection scope of the present invention should be determined by the technical spirit of the appended claims.

MSLB1, MSLB2: Master sub laser beam
SSLB1, SSLB2: slave sub laser beam
PM1PM4: phase modulator M1M6: reflector
BS1, BS2, BS3: Beam splitter

Claims (11)

A master laser beam emitter capable of emitting a master laser beam;
A laser beam splitting unit capable of splitting a master laser beam emitted from the master laser beam emitting unit into a first master sub laser beam and a second master sub laser beam;
A first phase modulator positioned on the path of the first master sub laser beam and capable of modulating the phase of the first master sub laser beam passing through, and a second master positioned on the path of the second master sub laser beam and passing through A second phase modulator capable of modulating the phase of the sub laser beam; And
A laser beam merging unit for merging laser beams that have passed through the first phase modulator and the second phase modulator;
A laser beam annealing apparatus comprising a. The method of claim 1,
A slave laser beam emission unit capable of emitting a slave laser beam is further provided, and the laser beam splitting unit splits the slave laser beam emitted from the slave laser beam emission unit into a first slave sub laser beam and a second slave sub laser beam. Wherein the first slave sub laser beam passes through the first phase modulator and the second slave sub laser beam passes through the second phase modulator. A master laser beam emitter capable of emitting a master laser beam;
A slave laser beam emitter capable of emitting a slave laser beam;
The master laser beam emitted from the master laser beam emitter is split into n master sub laser beams, the slave laser beam emitted from the slave laser beam emitter is split into n slave sub laser beams, A laser beam splitting unit for emitting n sub laser beams by merging the master sub laser beams and n slave sub laser beams in a one-to-one correspondence;
A first phase modulator to an n-th phase modulator positioned on an optical path of a corresponding one in a one-to-one correspondence with the n sub-laser beams emitted from the laser beam splitter; And
A laser beam merging unit for merging sub-laser beams that have passed through the first to n-th phase modulators;
A laser beam annealing apparatus (n: a natural number of 3 or more) comprising a. delete A master laser beam emitter capable of emitting a master laser beam;
A slave laser beam emitter capable of emitting a slave laser beam;
The master laser beam emitted from the master laser beam emitter is split into n master sub laser beams, the slave laser beam emitted from the slave laser beam emitter is split into n slave sub laser beams, A laser beam splitting unit for emitting n sub laser beams by merging the master sub laser beams and n slave sub laser beams in a one-to-one correspondence;
An additional split unit for splitting each of the n sub laser beams passing through the laser beam splitting unit into k sub laser beams to emit nXk sub laser beams;
A first phase modulator to an nXk-th phase modulator positioned on an optical path of a corresponding one to one to one corresponding to the nXk sub-laser beams emitted from the additional split unit; And
A laser beam merging unit for merging sub-laser beams passing through the first phase modulator to the nXk-th phase modulator;
A laser beam annealing apparatus (n: a natural number of 2 or more, k: a natural number of 2 or more) comprising a delete The method according to claim 1 or 2,
At least one of the first phase modulator and the second phase modulator includes a laser beam passing medium and a vibration unit capable of vibrating the laser beam passing medium. The method of claim 7,
The laser beam passing medium includes at least one of sapphire and quartz. The method of claim 7,
The vibration unit comprises a piezo actuator, laser beam annealing apparatus. The method according to claim 1 or 2,
At least one of the first phase modulator and the second phase modulator has a dove prism. Forming an amorphous silicon layer on the substrate;
Converting the amorphous silicon layer into a polycrystalline silicon layer by irradiating a laser beam emitted from the laser beam annealing apparatus of any one of claims 1 to 3 and 5; And
Forming a display device;
Containing, a method of manufacturing a display device.

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