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KR102194805B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR102194805B1
KR102194805B1 KR1020140083640A KR20140083640A KR102194805B1 KR 102194805 B1 KR102194805 B1 KR 102194805B1 KR 1020140083640 A KR1020140083640 A KR 1020140083640A KR 20140083640 A KR20140083640 A KR 20140083640A KR 102194805 B1 KR102194805 B1 KR 102194805B1
Authority
KR
South Korea
Prior art keywords
light emitting
electrode
semiconductor layer
type semiconductor
conductivity type
Prior art date
Application number
KR1020140083640A
Other languages
English (en)
Korean (ko)
Other versions
KR20150011310A (ko
Inventor
오소영
최병연
이지환
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to US14/336,574 priority Critical patent/US9673254B2/en
Priority to EP14177818.3A priority patent/EP2830094B1/en
Priority to CN201410351833.2A priority patent/CN104332482A/zh
Priority to JP2014148938A priority patent/JP6442177B2/ja
Publication of KR20150011310A publication Critical patent/KR20150011310A/ko
Application granted granted Critical
Publication of KR102194805B1 publication Critical patent/KR102194805B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
KR1020140083640A 2013-07-22 2014-07-04 발광소자 KR102194805B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US14/336,574 US9673254B2 (en) 2013-07-22 2014-07-21 Light emitting device
EP14177818.3A EP2830094B1 (en) 2013-07-22 2014-07-21 Light emitting device
CN201410351833.2A CN104332482A (zh) 2013-07-22 2014-07-22 发光器件
JP2014148938A JP6442177B2 (ja) 2013-07-22 2014-07-22 発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130085959 2013-07-22
KR20130085959 2013-07-22

Publications (2)

Publication Number Publication Date
KR20150011310A KR20150011310A (ko) 2015-01-30
KR102194805B1 true KR102194805B1 (ko) 2020-12-28

Family

ID=52482716

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140083640A KR102194805B1 (ko) 2013-07-22 2014-07-04 발광소자

Country Status (2)

Country Link
JP (1) JP6442177B2 (ja)
KR (1) KR102194805B1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102343087B1 (ko) * 2017-04-28 2021-12-24 엘지이노텍 주식회사 반도체 소자 패키지
KR102619665B1 (ko) * 2018-06-29 2023-12-29 삼성전자주식회사 발광 장치
CN110957404A (zh) * 2019-12-17 2020-04-03 佛山市国星半导体技术有限公司 一种高压led芯片及其制作方法
WO2021174412A1 (zh) * 2020-03-03 2021-09-10 东莞市中麒光电技术有限公司 发光二极管及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100006870A1 (en) * 2005-06-22 2010-01-14 Seoul Opto Device Co., Ltd Light emitting device
KR101014155B1 (ko) * 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP2011171739A (ja) * 2010-02-19 2011-09-01 Samsung Led Co Ltd マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置
US20120061694A1 (en) * 2010-09-13 2012-03-15 Epistar Corporation Light-emitting structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100966372B1 (ko) * 2007-11-23 2010-06-28 삼성엘이디 주식회사 모놀리식 발광다이오드 어레이 및 그 제조방법
CN101779303B (zh) * 2008-05-20 2011-06-15 松下电器产业株式会社 半导体发光器件及包括该半导体发光器件的光源装置和照明系统
TW201011890A (en) * 2008-09-04 2010-03-16 Formosa Epitaxy Inc Alternating current light emitting device
KR20130035658A (ko) * 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
JP6176032B2 (ja) * 2013-01-30 2017-08-09 日亜化学工業株式会社 半導体発光素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100006870A1 (en) * 2005-06-22 2010-01-14 Seoul Opto Device Co., Ltd Light emitting device
JP2011171739A (ja) * 2010-02-19 2011-09-01 Samsung Led Co Ltd マルチセルアレイを有する半導体発光装置、発光モジュール及び照明装置
KR101014155B1 (ko) * 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US20120061694A1 (en) * 2010-09-13 2012-03-15 Epistar Corporation Light-emitting structure

Also Published As

Publication number Publication date
KR20150011310A (ko) 2015-01-30
JP6442177B2 (ja) 2018-12-19
JP2015023293A (ja) 2015-02-02

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AMND Amendment
E601 Decision to refuse application
X091 Application refused [patent]
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant