KR102187471B1 - Light emitting device, and lighting system - Google Patents

Abstract

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.
The light emitting device according to the embodiment includes a plurality of nitride rods 117 on the lower electrode layer 140; A second conductivity type semiconductor layer 116 on the lower electrode layer 140 and the nitride rod 117; An active layer 114 on the second conductivity type semiconductor layer 116; A first conductivity type semiconductor layer 112 on the active layer 114; And an upper electrode 160 on the first conductivity type semiconductor layer 112.

Description

Light emitting device and lighting system {LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM}

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

Light Emitting Device is a pn junction diode that converts electrical energy into light energy. It can be created as a compound semiconductor such as Group III and Group V on the periodic table. Various colors can be realized by controlling the composition ratio of the compound semiconductor. It is possible.

When a forward voltage is applied, the electrons in the n-layer and the holes in the p-layer are combined to emit energy equivalent to the band gap energy of the conduction band and the balance band. Is mainly emitted in the form of heat or light, and becomes a light emitting device when radiated in the form of light.

For example, nitride semiconductors are attracting great interest in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light-emitting device, a green light-emitting device, and an ultraviolet (UV) light-emitting device using a nitride semiconductor are commercialized and widely used.

According to the prior art, the light emitting device may be divided into a horizontal light emitting device having electrodes disposed in the same direction and a vertical light emitting device disposed in opposite directions according to the position of the electrode.

Meanwhile, in a conventional vertical light emitting device, there is a technique of increasing light extraction efficiency by placing an uneven structure on the upper side of a light emitting structure in order to increase light extraction efficiency, but the light extraction efficiency is not high.

The embodiment is to provide a light emitting device capable of increasing light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

The light emitting device according to the embodiment includes a plurality of nitride rods 117 on the lower electrode layer 140; A second conductivity type semiconductor layer 116 on the lower electrode layer 140 and the nitride rod 117; An active layer 114 on the second conductivity type semiconductor layer 116; A first conductivity type semiconductor layer 112 on the active layer 114; And an upper electrode 160 on the first conductivity type semiconductor layer 112.

The lighting system according to the embodiment may include a light emitting unit including the light emitting device.

The embodiment can provide a light emitting device capable of enhancing light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 is a partially enlarged view of a light emitting device according to the first embodiment.
3 is a partially enlarged view of a light emitting device according to the second embodiment.
4 is a partially enlarged view of a light emitting device according to a third embodiment.
5 to 10 are cross-sectional views illustrating a method of manufacturing a light emitting device according to the embodiment.
11 is a cross-sectional view of a light emitting device package according to an embodiment.
12 is an exploded perspective view of a lighting device according to an embodiment.

In the description of the embodiment, each layer (film), region, pattern, or structure is "on/over" or "under" of the substrate, each layer (film), region, pad, or patterns. In the case of being described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed do. In addition, standards for the top/top or bottom of each layer will be described based on the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not fully reflect the actual size.

(Example)

1 is a cross-sectional view of a light emitting device 100 according to an exemplary embodiment, and FIG. 2 is an enlarged view of a first portion A of the light emitting device according to the first exemplary embodiment.

The light emitting device 100 according to the embodiment includes a plurality of nitride rods 117 on the lower electrode layer 140, and a second conductivity type semiconductor layer on the lower electrode layer 140 and the nitride rods 117. 116, an active layer 114 on the second conductivity-type semiconductor layer 116, and a first conductivity-type semiconductor layer 112 and the first conductivity-type semiconductor layer 112 on the active layer 114 The upper electrode 160 may be included thereon.

In the embodiment, the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 may constitute the light emitting structure 110.

The lower electrode layer 140 may include an ohmic layer 142, a reflective layer 144, a bonding layer 146, and a support member 148.

According to the embodiment, a plurality of nitride rods 117 are disposed on the lower electrode layer 140 to increase light reflectance under the light emitting structure 110 to improve light extraction efficiency.

The horizontal cross-sectional diameter of the nitride rod 117 is set in a range of about 200 nm to 500 nm, so that light extraction efficiency may be increased by diffraction and refraction of the emitted light.

The nitride rod 117 may include the same material as the second conductivity type semiconductor layer 116, but is not limited thereto.

According to the embodiment, the insulating layer rod 120 is disposed between the nitride rods 117 to maximize light extraction efficiency by a scattering effect of light according to a change in refractive index.

The height of the nitride rod 117 may be larger than the horizontal cross-sectional diameter, but is not limited thereto.

3 is a partially enlarged view of the light emitting device according to the second embodiment along the line I-I' (see FIG. 1).

The photograph of FIG. 3 is a state in which the nitride rod 117 is formed on the second conductivity type semiconductor layer 116 through etching, and the nitride rod 117 of FIG. 1 is rotated 180°.

In an embodiment, the horizontal width of the lower cross section of the nitride rod 117 may vary. For example, the horizontal width of the lower end of the nitride rod 117 may be reduced, and the lower end may have a conical shape, but the lower end thereof is not limited thereto.

4 is a partially enlarged view of a light emitting device according to the third embodiment.

In an embodiment, the lower electrode layer 140 may include an ohmic layer 143 in contact with the bottom surface of the nitride rod 117.

In addition, in the embodiment, the ohmic layer 143 also contacts the side surface of the nitride rod 117, thereby increasing the contact area between the ohmic layer 142 and the nitride rod 117, thereby improving the carrier injection efficiency, thereby improving the luminous efficiency. It can be improved.

The embodiment can provide a light emitting device capable of enhancing light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

Hereinafter, a method of manufacturing a light emitting device according to an exemplary embodiment will be described with reference to FIGS. 5 to 10.

According to the method of manufacturing a light emitting device according to the embodiment, as shown in FIG. 5, a first conductivity type semiconductor layer 112, an active layer 114 and a second conductivity type semiconductor layer 116 may be formed on the substrate 105. . The first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 may be defined as a light emitting structure 110.

The substrate 105 may be formed of, for example, at least one of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto. A buffer layer (not shown) may be further formed between the first conductivity type semiconductor layer 112 and the substrate 105.

For example, the first conductivity-type semiconductor layer 112 is formed of an n-type semiconductor layer to which an n-type dopant is added as a first conductivity-type dopant, and the second conductivity-type semiconductor layer 116 is a second conductivity-type dopant. It may be formed as a p-type semiconductor layer to which a p-type dopant is added. In addition, the first conductivity-type semiconductor layer 112 may be formed as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 116 may be formed as an n-type semiconductor layer.

The first conductivity-type semiconductor layer 112 may include, for example, an n-type semiconductor layer. The first conductivity type semiconductor layer 112 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) Can be formed. The first conductivity-type semiconductor layer 112 may be selected from, for example, InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, InN, etc., and doped with n-type dopants such as Si, Ge, Sn, Se, Te, etc. Can be.

In the active layer 114, electrons (or holes) injected through the first conductivity type semiconductor layer 112 and holes (or electrons) injected through the first conductivity type semiconductor layer 112 meet each other, It is a layer that emits light due to a difference in band gap of an energy band according to a material of the active layer 114. The active layer 114 may be formed in any one of a single well structure, a multiple well structure, a quantum dot structure, or a quantum wire structure, but is not limited thereto.

The active layer 114 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≦x≦1, 0≦y≦1, 0≦x+y≦1). When the active layer 114 is formed in the multi-well structure, the active layer 114 may be formed by stacking a plurality of well layers and a plurality of barrier layers, for example, in a cycle of an InGaN well layer/GaN barrier layer. Can be formed.

The second conductivity-type semiconductor layer 116 may be implemented as, for example, a p-type semiconductor layer. The second conductivity type semiconductor layer 116 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). Can be formed. The first conductivity type semiconductor layer 116 may be selected from, for example, InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN, InN, etc., and doped with p-type dopants such as Mg, Zn, Ca, Sr, Ba, etc. Can be.

Meanwhile, the first conductivity-type semiconductor layer 112 may include a p-type semiconductor layer, and the second conductivity-type semiconductor layer 116 may include an n-type semiconductor layer. Further, a semiconductor layer including an n-type or p-type semiconductor layer may be further formed on the second conductivity-type semiconductor layer 116, and accordingly, the light emitting structure 110 is np, pn, npn, pnp junction It may have at least any one of the structures.

In addition, doping concentrations of impurities in the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116 may be formed uniformly or non-uniformly. That is, the structure of the light-emitting structure 110 may be formed in various ways, but is not limited thereto.

Next, as shown in FIG. 6, a nitride rod 117 may be formed on the second conductivity type semiconductor layer 116. For example, a mask pattern (not shown) is formed, the second conductivity type semiconductor layer 116 is partially etched using the mask pattern as an etching mask to form the nitride rod 117, and the etched second conductivity type semiconductor layer The insulating layer rod 120 may be formed by filling 116 with an insulating layer.

The mask pattern may be a nano-sized metal pattern or a PR pattern, and the metal pattern material may include any one or more of Ni, Cr, Ti, and W, but is not limited thereto.

The insulating layer rod 120 may be formed of a SiO ₂ material using spin on glass, but is not limited thereto.

The insulating layer rod 120 has a function of securing the crystal quality of the active layer 114 to be formed later, and the insulating layer rod 120 is disposed between the nitride rods 117 to scatter light according to a change in refractive index. The light extraction efficiency can be improved by the effect.

According to the embodiment, a plurality of nitride rods 117 are disposed on the lower electrode layer 140 to increase light reflectance under the light emitting structure 110 to improve light extraction efficiency.

The horizontal cross-sectional diameter of the nitride rod 117 is set in a range of about 200 nm to 500 nm, so that light extraction efficiency may be increased by diffraction and refraction of the emitted light.

The nitride rod 117 may include the same material as the second conductivity type semiconductor layer 116, but is not limited thereto.

In the embodiment, as shown in FIG. 3, the lower cross-section of the nitride rod 117 may have a horizontal width change. For example, the horizontal width of the lower end of the nitride rod 117 may be reduced, and the lower end may have a conical shape, but the lower end thereof is not limited thereto.

Next, as shown in FIG. 7, the mask pattern may be removed, and an ohmic layer 142 may be formed on the surface of the second conductivity type semiconductor layer 116 and the nitride rod 117. In FIG. 7 and FIG. 8 to be described later, the substrate 105 is disposed on the upper side, but in the actual manufacturing process, the process is performed while the substrate 105 is disposed on the lower side, unlike FIGS. 7 and 8. I can.

The ohmic layer 142 may be formed such that the light emitting structure 110 and the lower electrode layer 140 are in ohmic contact, and may be formed of a transparent conductive oxide film, but is not limited thereto.

For example, the ohmic layer 142 is ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO (Aluminum Zinc Oxide), AGZO (Aluminum Gallium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO ( Indium Aluminum Zinc Oxide), IGZO(Indium Gallium Zinc Oxide), IGTO(Indium Gallium Tin Oxide), ATO(Antimony Tin Oxide), GZO(Gallium Zinc Oxide), IZON(IZO Nitride), ZnO, IrOx, RuOx, NiO, It may be formed of at least one material selected from Pt, Ag, and Ti.

In addition, according to the third embodiment, as shown in FIG. 4, the ohmic layer 143 also contacts the side surface of the nitride rod 117 to increase the contact area between the ohmic layer 143 and the nitride rod 117, thereby injecting carriers. The luminous efficiency can be improved by improving the efficiency.

Again, referring to FIG. 7, a channel layer 135 and a current blocking layer 130 may be formed on the light emitting structure 110. The ohmic layer 142 may be formed after the channel layer 135 and the current blocking layer 130 are formed.

In the embodiment, a channel layer 135 is provided outside the light emitting structure 110 and the lower electrode layer 140 to prevent the material of the lower electrode layer 140 from being transferred to the light emitting structure to block leakage, and the channel layer 135 When this reflective material is included, it may contribute to increase of light extraction efficiency.

For example, the channel layer 135 is at least one from the group consisting of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. May be selected and formed, but is not limited thereto.

In addition, the embodiment may contribute to current diffusion by forming the current blocking layer 130 in a region overlapping with the upper electrode 160 to be formed later. The current blocking layer 130 may be formed including an insulating material such as oxide or nitride, or an amorphous region, but is not limited thereto.

The lower electrode layer 140 may include an ohmic layer 142, a reflective layer 144, a bonding layer 146, and a support member 148.

Hereinafter, the lower electrode layer 140 will be described in detail.

The reflective layer 144 may be formed of a material having a high reflectivity. For example, the reflective layer 144 may be formed of a metal or alloy containing at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf.

In addition, the reflective layer 144 includes the metal or alloy and Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (IZO), Indium-Zinc-Tin-Oxide (IZTO), Indium-Aluminum-Zinc- Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide), etc. It can be formed in multiple layers.

For example, in an embodiment, the reflective layer 144 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. For example, the reflective layer 144 may include an Ag layer and a Ni layer alternately, and may include a Ni/Ag/Ni, or a Ti layer and a Pt layer.

The bonding layer 146 includes a barrier metal or a bonding metal, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. Can include.

The support member 148 supports the light emitting structure 110 and may perform a heat dissipation function. The bonding layer 146 may be implemented as a seed layer.

The support member 148 is, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or a semiconductor substrate implanted with impurities (for example, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.) may be formed of at least one of. In addition, the support member 148 may be formed of an insulating material.

Thereafter, as shown in FIG. 8, a temporary substrate 149 is formed on the support member 148. The temporary substrate 149 may be formed of at least one of a metal material, a semiconductor material, or an insulating material.

Next, as shown in FIG. 9, the substrate 105 is removed from the light emitting structure 110. As an example, the substrate 105 may be removed by a laser lift off (LLO) process. The laser lift-off process (LLO) is a process of exfoliating the substrate 105 and the light emitting structure 110 from each other by irradiating a laser to the lower surface of the substrate 105.

Next, as shown in FIG. 10, an isolation etching process, a temporary substrate 149 removal process, and the like may be performed.

According to the embodiment, the side surface of the light emitting structure 110 is etched by performing isolation etching, and a partial region of the channel layer 135 may be exposed. The isolation etching may be performed by dry etching such as, for example, Inductively Coupled Plasma (ICP), but is not limited thereto.

An uneven pattern P is formed on the upper surface of the light emitting structure 110 to increase an external light extraction effect.

Thereafter, the upper electrode 160 may be formed on the first conductivity type semiconductor layer 112 and the passivation layer 150 may be formed as an insulating layer or the like in the isolation etching region.

The embodiment can provide a light emitting device capable of enhancing light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

11 is a diagram illustrating a light emitting device package 200 to which a light emitting device according to an embodiment is applied.

Referring to FIG. 11, a light emitting device package according to an embodiment includes a body 120, a first lead electrode 131 and a second lead electrode 132 disposed on the body 120, and the body 120 The light emitting device 100 according to the embodiment provided in and electrically connected to the first lead electrode 131 and the second lead electrode 132, and a molding member 140 surrounding the light emitting device 100 Can include.

The body 120 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100.

The first lead electrode 131 and the second lead electrode 132 are electrically separated from each other, and provide power to the light emitting device 100. In addition, the first lead electrode 131 and the second lead electrode 132 reflect light generated from the light emitting device 100 to increase light efficiency, and heat generated from the light emitting device 100 It can also play a role of discharging to the outside.

The light emitting device 100 may be disposed on the body 120 or may be disposed on the first lead electrode 131 or the second lead electrode 132.

The light emitting device 100 may be electrically connected to the first lead electrode 131 and the second lead electrode 132 by any one of a wire method, a flip chip method, or a die bonding method.

The molding member 140 may surround the light emitting device 100 to protect the light emitting device 100. In addition, a phosphor (not shown) may be included in the molding member 140 to change a wavelength of light emitted from the light emitting device 100.

A plurality of light emitting devices or light emitting device packages according to the embodiment may be arrayed on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on the optical path of the light emitting device package. Such a light emitting device package, a substrate, and an optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided to display devices such as portable terminals and notebook computers, or may be variously applied to lighting devices and indication devices. Another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above-described embodiments. For example, the lighting device may include a lamp, a street light, an electric sign, and a headlamp.

12 is an exploded perspective view of a lighting device according to an embodiment.

Referring to FIG. 12, a lighting device according to an embodiment includes a cover 2100, a light source module 2200, a radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. I can. In addition, the lighting device according to the embodiment may further include one or more of a member 2300 and a holder 2500. The light source module 2200 may include a light emitting device package according to the embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape with a hollow and an open portion. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the radiator 2400. The cover 2100 may have a coupling portion coupled to the radiator 2400.

A milky white paint may be coated on the inner surface of the cover 2100. The milky white paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is to allow light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 2100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent or opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the radiator 2400. Accordingly, heat from the light source module 2200 is conducted to the radiator 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the radiator 2400 and has guide grooves 2310 into which a plurality of light source units 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the substrate and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects light reflected on the inner surface of the cover 2100 and returning toward the light source module 2200 toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 may be formed of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700. Accordingly, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides it to the light source module 2200. The power supply unit 2600 is accommodated in the storage groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide portion 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A number of components may be disposed on one surface of the base 2650. A number of components include, for example, a DC converter that converts AC power provided from an external power source to DC power, a driving chip that controls driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension part 2670, and the other end of the "+ wire" and "- wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is solidified, and allows the power supply part 2600 to be fixed inside the inner case 2700.

Features, structures, effects, and the like described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Further, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified for other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the embodiments have been described above, these are only examples and are not intended to limit the embodiments, and those of ordinary skill in the field to which the embodiments belong are not departing from the essential characteristics of the embodiments. It will be seen that branch transformation and application are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set in the appended claims.

The lower electrode layer 140, a plurality of nitride rods 117,
Second conductivity type semiconductor layer 116, active layer 114,
First conductivity type semiconductor layer 112, upper electrode 160

Claims (7)

A plurality of nitride rods disposed on the lower electrode layer;
A second conductivity type semiconductor layer disposed on the lower electrode layer and the nitride rod;
A plurality of insulating layer rods disposed between the lower electrode layer and the second conductivity type semiconductor layer;
A current blocking layer disposed between the lower electrode layer and the second conductivity type semiconductor layer;
An active layer disposed on the second conductivity type semiconductor layer;
A first conductivity type semiconductor layer disposed on the active layer; And
Includes; an upper electrode disposed on the first conductivity type semiconductor layer,
The nitride rod includes the same material as the second conductivity type semiconductor layer material,
The insulating layer rod is disposed between the nitride rod,
The current blocking layer is disposed below the nitride rod and the insulating layer rod, and is disposed in a region overlapping the upper electrode,
A light emitting device having an upper surface of the current blocking layer in contact with the nitride rod and the insulating layer rod. delete delete The method of claim 1,
The lower electrode layer,
A light emitting device comprising an ohmic layer in contact with the bottom surface of the nitride rod. The method of claim 4,
The ohmic layer
A light-emitting device that also contacts a side surface of the nitride rod. The method of claim 1,
The lower section of the nitride rod is
A light emitting device with a variable horizontal width. An illumination system comprising a light-emitting unit comprising the light-emitting element according to any one of claims 1 and 4 to 6.

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