KR102091541B1 - Preparing method for organic light emitting display device - Google Patents

Abstract

The present invention comprises the steps of: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming an active layer on the gate insulating layer; d) forming an insulating layer on the active layer; e) forming source and drain electrodes in contact with the active layer on the insulating layer; f) forming a passivation layer on the insulating layer to cover the source and drain electrodes; And g) forming an organic light emitting element electrically connected to one of the source and drain electrodes, wherein the step a) comprises aluminum, molybdenum, or silver on the substrate. The metal is formed as an etchant composition comprising 50 to 70% by weight of phosphoric acid, 2 to 15% by weight of nitric acid, 5 to 20% by weight of acetic acid, 0.1 to 5% by weight of para toluene sulfonic acid, and the balance of water to form a metal film or a laminate thereof. A method of manufacturing an organic light emitting display device with improved process efficiency by collectively etching metal films forming a gate electrode and a pixel electrode to exhibit excellent etching characteristics by including a step of etching a film to form a gate electrode will be.

Description

Manufacturing method of organic light emitting display device {PREPARING METHOD FOR ORGANIC LIGHT EMITTING DISPLAY DEVICE}

The present invention relates to a method of manufacturing an organic light emitting display device.

Typically, flat display devices (flat displat devices) can be largely classified into a light emitting type and a light receiving type. The light emitting type includes a flat cathode ray tube, a plasma display panel, an electro luminescent device, and a light emitting diode. A liquid crystal display is mentioned as a light receiving type. Among them, the electroluminescent device has attracted attention as a next-generation display device because it has a wide viewing angle, an excellent contrast, and a fast response speed.

The electroluminescent device is classified into an inorganic electroluminescent device and an organic electroluminescent device according to the material forming the light emitting layer.

Among them, the organic electroluminescent device is a self-luminous display that emits light by electrically exciting a fluorescent organic compound, which can be driven at a low voltage, is easy to thin, and has a wide viewing angle and a fast response speed in liquid crystal displays. It is receiving attention as a next-generation display that can solve what is pointed out as a problem.

The organic electroluminescent device is provided with a light emitting layer made of an organic material between the anode electrode and the cathode electrode. In the organic electroluminescent device, as the anode and cathode voltages are applied to these electrodes, holes injected from the anode electrode are transferred to the light emitting layer via the hole transport layer, and electrons are transferred from the cathode electrode to the light emitting layer via the electron transport layer. As it is moved, electrons and holes recombine in the light emitting layer to generate excitons.

As the exciton changes from the excited state to the ground state, the fluorescent molecules in the light emitting layer emit light to form an image. In the case of a full color organic electroluminescent device, full color is realized by providing pixels that emit three colors of red (R), green (G), and blue (B).

On the other hand, thin film transistors (hereinafter referred to as TFTs) used in flat panel display devices such as electroluminescent elements or liquid crystal displays are used as switching elements for controlling the operation of each pixel and driving elements for driving the pixels. Such a thin film transistor has a semiconductor active layer having a drain region doped with a high concentration of impurities on the substrate, and a channel region formed between the source region and the drain region and the source region, a gate insulating film formed on the semiconductor active layer, and a channel of the active layer It consists of a gate electrode formed on top of the region.

Korean Registered Patent 10-1174881

An object of the present invention is to provide a method of manufacturing an organic light emitting display device with an etchant composition that can be used to form a gate electrode and a pixel electrode.

1. a) forming a gate electrode on the substrate;

b) forming a gate insulating layer on the substrate including the gate electrode;

c) forming an active layer on the gate insulating layer;

d) forming an insulating layer on the active layer;

e) forming source and drain electrodes in contact with the active layer on the insulating layer;

f) forming a passivation layer on the insulating layer to cover the source and drain electrodes; And

g) forming an organic light emitting device electrically connected to one of the source and drain electrodes, wherein the method of manufacturing the organic light emitting display device comprises:

The a) step is to form an aluminum-based, molybdenum-based, silver-based metal film or a laminated film on the substrate, and 50 to 70% by weight of phosphoric acid, 2 to 15% by weight of nitric acid, 5 to 20% by weight of acetic acid, 0.1 to para toluene sulfonic acid A method of manufacturing an organic light emitting display device comprising the step of forming a gate electrode by etching the metal film with an etchant composition containing 5% by weight and the remaining amount of water.

2. In the above 1, wherein the aluminum-based metal film is aluminum film or aluminum and La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe , Si, Ti, Pt and C is an alloy film of at least one metal selected from the method of manufacturing an organic light emitting display device.

3. The method according to the above 1, wherein the molybdenum-based metal film is a molybdenum film or an alloy film of molybdenum and one or more metals selected from Ti, Ta, Cr, Ni, Nd, In, and Al.

4. In the above 1, wherein the silver-based metal film is a silver film or silver and La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si , Ti, Pt, Pd and Cu is an alloy film of at least one metal selected, a method of manufacturing an organic light emitting display device.

5. In the above 1, the step of forming the organic light emitting device is

Forming a first electrode connected to one of the source and drain electrodes; Forming an organic layer on the first electrode; And forming a second electrode on the organic layer.

6. In the above 2, wherein the first electrode is a passivation layer to form a conductive material film that is an aluminum-based, molybdenum-based, silver-based metal film, metal oxide film or a laminated film thereof, 60 to 70% by weight of phosphoric acid, nitric acid 2 To 8% by weight, 5 to 15% by weight of acetic acid, 0.1 to 7% by weight of a potassium-based compound, and the remaining amount of water by etching the conductive material film with an etchant composition, the method of manufacturing an organic light emitting display device.

7. In the above 6, the metal oxide film is indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), cadmium tin oxide (CTO) or indium gallium zinc oxide (IGZO) film, the manufacturing method of an organic light emitting display device.

According to the present invention, the metal films constituting the gate electrode and the pixel electrode are collectively etched to exhibit excellent etching characteristics, thereby simplifying the process and reducing the process cost compared to the case of using the respective etchant compositions. An organic light emitting display device can be manufactured with process efficiency.

The present invention comprises the steps of: a) forming a gate electrode on a substrate; b) forming a gate insulating layer on the substrate including the gate electrode; c) forming an active layer on the gate insulating layer; d) forming an insulating layer on the active layer; e) forming source and drain electrodes in contact with the active layer on the insulating layer; f) forming a passivation layer on the insulating layer to cover the source and drain electrodes; And g) forming an organic light emitting element electrically connected to one of the source and drain electrodes, wherein the step a) comprises aluminum, molybdenum, or silver on the substrate. The metal is formed as an etchant composition comprising 50 to 70% by weight of phosphoric acid, 2 to 15% by weight of nitric acid, 5 to 20% by weight of acetic acid, 0.1 to 5% by weight of para-toluene sulfonic acid, and the remaining amount of water to form a metal film or a laminate thereof. A method of manufacturing an organic light emitting display device with improved process efficiency by collectively etching metal films forming a gate electrode and a pixel electrode to exhibit excellent etching characteristics by including a step of etching a film to form a gate electrode will be.

Hereinafter, a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention will be described in detail.

First, a) a gate electrode is formed on the substrate.

As the substrate, silicon (Si), glass, or an organic material may be used. When using a silicon (Si) substrate, an insulating layer (not shown) may be further formed on the surface by a thermal oxidation process.

A gate electrode is formed by forming a film of a conductive material such as a metal or a conductive metal oxide on the substrate and etching the film.

According to one embodiment of the present invention, the conductive material film may be an aluminum-based metal film, a molybdenum-based, a silver-based metal film, or a laminated film thereof.

In the present specification, the aluminum-based metal film means an aluminum film or an aluminum alloy film. The aluminum-based alloy film is made of aluminum and other metal Al-X (X is La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe , Si, Ti, Pt and C) at least one metal) alloy film may be used. When the Al-X alloy film is used as the aluminum-based metal film, there is an advantage of avoiding a process problem due to a hillock phenomenon caused by heat of aluminum.

The molybdenum-based metal film means a molybdenum film or a molybdenum alloy film, and buffers the battery reaction between thin films. For example, the molybdenum alloy film is formed by alloying one or more metals selected from metal groups of Ti, Ta, Cr, Ni, Nd, In, and Al as the main component.

The silver-based metal film means a silver film or a silver alloy film, and the silver alloy film includes, for example, silver as a main component La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd , Sn, Fe, Si, Ti, Pt, Pd, Cu is formed by alloying one or more metals selected from the metal group. Preferably, Pd is considered in consideration of adhesion to a surface and reflectance in a visible region of light when wiring is deposited. And a silver alloy using Cu together.

The metal film may be etched with an etchant composition containing phosphoric acid, nitric acid, acetic acid, and para-toluene sulfonic acid to form a gate electrode.

In the etching solution composition according to the present invention, phosphoric acid is the main oxidizing agent for oxidizing the metal film.

The content of phosphoric acid is not particularly limited, and may be included, for example, 50 to 70% by weight of the total weight of the composition. If the content is less than 50% by weight, sufficient etching may not be achieved due to insufficient etching power, and if it is more than 70% by weight, the metal film may be over-etched and the area of the remaining metal film may be reduced to prevent it from functioning as an electrode.

Nitric acid is an auxiliary oxidant, which controls the etch rate and lowers the taper angle.

The content of nitric acid is not particularly limited, for example, 2 to 15% by weight of the total weight of the composition, preferably 3 to 8% by weight may be included. If the content is less than 2% by weight, the etching rate of the metal film may be lowered, and a residue of the silver-based metal film may occur, resulting in dark spot defect. If it is more than 15% by weight, the etching rate may be faster, and control in the process may be difficult.

Acetic acid is a buffer that controls the reaction rate and the like, and controls the rate of decomposition of nitric acid, and generally serves to reduce the rate of decomposition.

The content of acetic acid is not particularly limited, for example, 5 to 15% by weight of the total weight of the composition, preferably 5 to 15% by weight may be included. If the content is less than 5% by weight, the etching of the metal film may not be smooth, and etching uniformity may be deteriorated. If the content is more than 20% by weight, bubbles may be generated and etching of the silver-based metal film may not be smooth.

Para toluene sulfonic acid improves the uniformity of the gate electrode and the first electrode, and serves as an etch inhibitor of the molybdenum-based metal film and an etch regulator of the silver-based metal film.

The content of para toluene sulfonic acid is not particularly limited, and may be included, for example, 0.1 to 5% by weight of the total weight of the composition. If the content is less than 0.1% by weight, the etching uniformity of the silver-based metal film is deteriorated, and staining may occur. If the content is more than 5% by weight, residues of the silver-based metal film may be generated and dark spot defects may occur.

After the etchant composition according to the present invention is appropriately adopted according to the specific needs of the components, water is added to control the overall composition, and the remaining amount of the total composition is occupied by water. Preferably, the components are adjusted to have the aforementioned content range.

The type of water is not particularly limited, but is preferably deionized distilled water, and more preferably, a specific resistance value of 18 Pa · cm or more as deionized distilled water for semiconductor processes.

Thereafter, b) a gate insulating layer is formed on the substrate including the gate electrode.

The gate insulating layer may be formed by applying and patterning an insulating material on a substrate including the gate electrode.

The insulating material is not particularly limited, and an insulating material common in the art may be used, and examples thereof include silicon oxide, tantalum oxide, and aluminum oxide. These may be used alone or in combination of two or more.

Next, c) an active layer is formed on the gate insulating layer.

The active layer can be formed by coating and patterning a semiconductor material by a process such as PVD, CVD, or ALD on a gate insulating layer corresponding to the gate electrode.

The active layer is doped with n-type or p-type impurities in the source / drain regions, and has a channel region connecting these source regions and drain regions.

Examples of usable semiconductor materials include inorganic semiconductors, organic semiconductors, and oxide semiconductors. These may be used alone or in combination of two or more.

Specific examples of the inorganic semiconductor include CdS, GaS, ZnS, CdSe, CaSe, ZnSe, CdTe, SiC, Si, and the like. These may be used alone or in combination of two or more.

Specific examples of the organic semiconductor include polythiophene and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyflorene and its derivatives, polythiophenevinylene and its derivatives, and polythiene It may contain an offen-heterocyclic aromatic copolymer and derivatives thereof, and as a low molecule, oligocenes of pentacene, tetracene, naphthalene and their derivatives, alpha-6-thiophene, alpha-5-thiophene Offen and derivatives thereof, phthalocyanine and derivatives thereof with or without metal, pyromellitic dianhydride or pyromellitic diimide and derivatives thereof, perylenetetracarboxylic acid dianhydride or perylenetetracar And dicarboxylic acids and derivatives thereof.

Specific examples of the oxide semiconductor may include one or more elements and oxygen selected from the group gallium (Ga), phosphorus (In), zinc (Zn), and tin (Sn). For example, the active layer may include ZnO, ZnGaO, ZnInO, GaInO, GaSnO, ZnSnO, InSnO, HfInZnO, ZnGaInO, etc., preferably a GI-ZO layer [a (In ₂ O ₃ ) b (Ga ₂ O ₃ ) c (ZnO) layer] (a, b, and c are real numbers satisfying the conditions of a≥0, b≥0, c> 0, respectively).

Thereafter, d) an insulating layer is formed on the active layer.

The insulating layer is specifically intended to protect the channel of the active layer, and the insulating layer may cover the entire active layer except for the region in contact with the source / drain electrodes, but is not limited thereto, and may be formed only on the top of the channel.

The insulating layer may also serve as an etch stop layer.

The insulating layer may be formed by applying and patterning an insulating material within the aforementioned range.

Next, e) source and drain electrodes in contact with the active layer are formed on the insulating layer.

The source and drain electrodes may be formed by forming a contact hole in an insulating layer corresponding to a region where the active layer and the source and drain electrodes are contacted, and then forming and etching a conductive material layer on the insulating layer.

The conductive material film may be an aluminum-based metal film, a molybdenum-based, a silver-based metal film, or a laminated film thereof, and may be etched with the etchant composition according to the present invention to form source and drain electrodes.

According to one embodiment of the present invention, the middle portion of each of the source electrode and the drain electrode during the etching, that is, the portion formed inclined at a position corresponding to a corner portion of the gate electrode may be etched and removed.

Then, the source electrode includes a first source electrode and a second source electrode formed separately from each other. Here, the first source electrode is formed on the active layer, and the second source electrode is formed on the portion where the active layer is not formed. At this time, the first source electrode and the second source electrode are each formed flat without an inclined portion. Similarly, the first drain electrode is formed on the active layer, and the second drain electrode is formed on the portion where the active layer is not formed. At this time, the first drain electrode and the second drain electrode are each formed flat without an inclined portion.

Then, when forming the first electrode, which will be described later, the third source electrode and the third drain electrode are also formed. Here, the third source electrode is formed to connect the first source electrode and the second source electrode, and the third drain electrode is formed to connect the first drain electrode and the second drain electrode.

By removing the inclined portion of the source / drain electrode and connecting it with an ITO electrode, the insulation breakdown caused by the inclined portion of the source / drain electrode can be prevented. A decreasing effect can be obtained.

The description of the specific structure and effect according to this embodiment uses the contents described in Korean Patent Registration No. 111781.

Thereafter, f) a passivation layer is formed on the insulating layer to cover the source and drain electrodes.

Next, g) an organic light emitting device electrically connected to one of the source and drain electrodes is formed.

The organic light emitting device includes forming a first electrode connected to one of the source and drain electrodes; Forming an organic layer on the first electrode; And forming a second electrode on the organic layer.

The first electrode may be formed by forming a contact hole in a passivation layer at a portion where the first electrode and one of the source and drain electrodes are connected, and then forming a conductive material film on the passivation layer and etching the same.

The conductive material film may be an aluminum-based metal film, a molybdenum-based, a silver-based metal film, a metal oxide film, or a laminated film thereof, and the first electrode may be formed by etching it with the etchant composition according to the present invention.

The metal oxide film may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), cadmium tin oxide (CTO) or indium gallium zinc oxide (IGZO) film May be, preferably, an indium tin oxide film or an indium gallium zinc oxide film, but is not limited thereto.

A pixel defining layer may be further formed of an insulating material on the passivation layer to cover the first electrode. In such a case, a hole is formed by patterning a portion where the first electrode and the organic layer are connected in the pixel defining layer.

In detail, a pixel defining layer (PDL) is provided to cover the edge of the first electrode. In addition to the role of defining the light emitting region, the pixel defining layer widens the gap between the edge of the first electrode and the second electrode to prevent the electric field from being concentrated at the edge of the first electrode, thereby preventing the first electrode and the second electrode. It serves to prevent short circuits.

Thereafter, an organic layer is formed on the first electrode.

The organic layer may be provided with a hole injection transport layer, a light emitting layer, an electron injection transport layer, etc., all or selectively stacked. However, the light emitting layer is essentially provided.

Then, a second electrode is formed on the organic layer.

The first electrode is provided to be patterned for each pixel.

In the case of a front emission type structure that implements an image in the direction of the second electrode, the first electrode may be provided as a reflective electrode. To this end, a reflective film made of an alloy such as Al or Ag is provided.

When the first electrode is used as an anode electrode, a layer made of a metal oxide such as ITO, IZO, or ZnO having a high work function (absolute value) is included. When the first electrode is used as a cathode electrode, a highly conductive metal having a low work function (absolute value) such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, or Ca is used. . Therefore, in this case, the aforementioned reflective film will be unnecessary.

The second electrode may be provided as a light-transmitting electrode. To this end, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, etc., include a semi-transmissive reflective film formed of a thin film, or ITO, IZO, ZnO, etc. It can contain. When the first electrode is an anode, the second electrode is a cathode, and when the first electrode is a cathode, the second electrode is an anode.

A protective layer may be further formed on the second electrode, and sealing by glass or the like may be performed.

Hereinafter, preferred embodiments are provided to help the understanding of the present invention, but these examples are merely illustrative of the present invention and do not limit the scope of the appended claims, and the embodiments are within the scope and technical scope of the present invention. It is apparent to those skilled in the art that various changes and modifications to the present invention are possible, and it is natural that such modifications and modifications belong to the appended claims.

Example  And Comparative example

(One) Etchant  Preparation of the composition

An etchant composition including the composition and content shown in Table 1 below and the remaining amount of water was prepared.

division Phosphoric acid nitric acid Acetic acid Para toluene sulfonic acid Preparation Example 1
(Example 1) 66 5 10 2 Preparation Example 2
(Comparative Example 1) 49 5 10 2 Preparation Example 3
(Comparative Example 2) 71 5 10 2 Preparation Example 4
(Comparative Example 3) 65 One 10 2 Preparation Example 5
(Comparative Example 4) 65 16 10 2 Preparation Example 6
(Comparative Example 5) 65 5 3 2 Preparation Example 7
(Comparative Example 6) 65 5 21 2 Preparation Example 8
(Comparative Example 7) 65 5 10 - Preparation Example 9
(Comparative Example 8) 65 5 10 7

(2) Formation of wiring

1) Gate electrode

On the glass substrate, a Mo / Al / Mo metal film was formed by a deposition method, and this was etched with the respective etchant compositions to form a gate electrode.

2) First electrode

After forming the gate electrode, the source and drain electrodes on the glass substrate, a passivation layer was formed. Thereafter, a layered structure of ITO / APC (AgPdCu) / ITO was formed on the passivation layer, and this was etched with the respective etchant compositions to form a first electrode. At this time, a hole was drilled in the passivation layer, and the drain and the first electrode were joined to form a smooth electrical signal transmission.

Experimental example . Etch  Characteristic evaluation

The gate electrode and the first electrode of the organic light emitting display device manufactured by the method of each of the Examples and Comparative Examples were observed with an SEM microscope, and etching characteristics were evaluated according to the following criteria, and the results are shown in Table 2 below.

<Side etch>

○: (gate electrode) less than 1.3 μm

    (Pixel electrode) less than 0.5㎛

△: (gate electrode) 1.3 μm or more to less than 1.6 μm

    (Pixel electrode) 0.5 μm or more to less than 1.0 μm

X: (gate electrode) 1.6 µm or more

(Pixel electrode) 1.0 μm or more

<Taper angle>

○: 30 ° or more to less than 50 °

△: 50 ° or more to less than 70 °

X: less than 30 ° or more than 70 °

division Gate electrode First electrode (pixel electrode) Side etch (㎛) Taper angle (°) Side etch (㎛) (metal)
Having residue Example 1 ○ ○ ○ radish Comparative Example 1 △ △ ○ U Comparative Example 2 X △ X radish Comparative Example 3 ○ X X U Comparative Example 4 X △ X radish Comparative Example 5 △ △ △ U Comparative Example 6 X X X radish Comparative Example 7 △ ○ X radish Comparative Example 8 ○ △ ○ U

Referring to Table 2, the gate electrode of the organic light emitting display device manufactured by the method of Example 1 has little side etch and exhibits a good taper angle. In addition, the side electrode was also less in the first electrode, and no residue was generated.

However, in the organic light-emitting display devices manufactured by the methods of Comparative Examples 1 to 8, the gate electrode and the first electrode have poor etching characteristics, and thus, their utilization as electrical wiring is poor.

Claims (7)

a) forming a gate electrode on the substrate;
b) forming a gate insulating layer on the substrate including the gate electrode;
c) forming an active layer on the gate insulating layer;
d) forming an insulating layer on the active layer;
e) forming source and drain electrodes in contact with the active layer on the insulating layer;
f) forming a passivation layer on the insulating layer to cover the source and drain electrodes; And
g) forming an organic light emitting device electrically connected to one of the source and drain electrodes, wherein the method of manufacturing the organic light emitting display device comprises:
In the step a), a laminated film including an aluminum-based, molybdenum-based, and silver-based metal film is formed on a substrate, and 50 to 70% by weight of phosphoric acid, 2 to 15% by weight of nitric acid, 5 to 20% by weight of acetic acid, and 0.1 to 5 of para toluene sulfonic acid A method of manufacturing an organic light emitting display device comprising the step of forming a gate electrode by etching the laminated film with an etchant composition containing weight% and the remaining amount of water.
The method according to claim 1, The aluminum-based metal film is aluminum film or aluminum and La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si , Ti, Pt and C is an alloy film of at least one metal selected, a method of manufacturing an organic light emitting display device.
The method of claim 1, wherein the molybdenum-based metal film is a molybdenum film or an alloy film of molybdenum and one or more metals selected from Ti, Ta, Cr, Ni, Nd, In, and Al.
The method according to claim 1, The silver-based metal film is a silver film or silver and La, Mg, Zn, In, Ca, Te, Sr, Cr, Co, Mo, Nb, Ta, W, Ni, Nd, Sn, Fe, Si, Ti , Pt, Pd and Cu is an alloy film of at least one metal selected, a method of manufacturing an organic light emitting display device.
The method according to claim 1, The step of forming the organic light emitting device
Forming a first electrode connected to one of the source and drain electrodes; Forming an organic layer on the first electrode; And forming a second electrode on the organic layer.
The method according to claim 5, wherein the first electrode is a passivation layer to form a conductive material film that is an aluminum-based, molybdenum-based, silver-based metal film, metal oxide film or a laminate thereof, 50 to 70% by weight of phosphoric acid, 2 to 15% by weight of nitric acid %, 5 to 20% by weight of acetic acid, 0.1 to 5% by weight of para toluene sulfonic acid, and the remaining amount of water to form the etching of the conductive material film with an etching solution composition, the method of manufacturing an organic light emitting display device.
The method according to claim 6, The metal oxide film is indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), cadmium tin oxide (CTO) or indium gallium zinc oxide (IGZO ) Membrane, manufacturing method of organic light emitting display device.