KR102071769B1 - Plasma processing container and plasma processing apparatus - Google Patents

Abstract

(Problem) In the plasma processing apparatus including an inductively coupled plasma processing apparatus, deformation of the lid member due to heat is suppressed.
(Solution means) The O-ring 51, the heat insulating member 52 and the spiral shield 53 are connected to the connection portion between the main body container 2A and the upper container 2B of the inductively coupled plasma processing apparatus 1 over the entire circumference. ) Is provided. The heat insulating member 52 is fitted in the groove 62 for heat insulating members. The heat insulation member 52 is comprised by the some heat insulation sheet 54 of a lead shape. The gap CL is provided between the main body container 2A and the upper container 2B by the heat insulating member 52. By the heat insulation member 52, even if the main body container 2A and the upper container 2B are thermally separated, and the upper container 2B deforms by heat, the deformation amount can be absorbed.

Description

Plasma processing vessel and plasma processing apparatus {PLASMA PROCESSING CONTAINER AND PLASMA PROCESSING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing plasma processing on a target object and a plasma processing container used therefor.

In the manufacturing process of an FPD (flat panel display), various plasma processes, such as plasma etching, plasma ashing, and plasma film-forming, are performed with respect to the FPD board | substrate. As the apparatus for performing such plasma processing, for example, a parallel plate type plasma processing apparatus, an inductively coupled plasma (ICP) processing apparatus and the like are known. These plasma processing apparatuses are comprised as a vacuum apparatus which processes by depressurizing the inside of a processing container in a vacuum state. Moreover, in recent years, the processing container is also enlarged in order to process a large sized FPD board | substrate.

For example, the inductively coupled plasma processing apparatus is provided with a processing container which is kept airtight, and plasma processing is performed on a substrate, and a high frequency antenna arranged outside the processing container. The processing container has a main body container, a dielectric wall constituting the ceiling portion of the processing chamber, and a frame-shaped lid member supporting the dielectric wall. In the inductively coupled plasma processing apparatus, an induction electric field is formed in the processing container by a high frequency antenna, and the processing gas introduced into the processing container is converted into plasma by the induction electric field, and the plasma is used for a large FPD. A predetermined plasma treatment is performed on the substrate.

In the plasma processing apparatus, the temperature in the processing chamber is increased by the generation of plasma or the process at high temperature. In the inductively coupled plasma processing apparatus having, for example, the main body container constituting the processing container and the lid member supporting the dielectric wall are heated. When the lid member is overheated, distortion occurs in the lid member, and a gap is generated at the joint portion with the main body container. As a result, there is a possibility that a vacuum leak from the inside of the processing chamber occurs or the dielectric wall supported by the lid member is broken. Moreover, with the enlargement of the processing container, the problem of distortion is also becoming serious.

Regarding the temperature control of the constituent members in the plasma processing apparatus, for example, Patent Document 1 proposes to provide a heat insulating member on a joining surface of a head main body and a head cover in a shower head that emits gas. This patent document 1 aims at restraining the heat conduction of a head main body and a head cover by a heat insulation member, and managing the temperature of the gas injection part of a showerhead.

Moreover, regarding the seal structure of the junction part of the cover member and a main body container in an inductive coupling plasma processing apparatus, in patent document 2, in order to prevent deterioration of an O-ring, a plasma blocking means is provided inside the junction part. It is proposed to provide an O-ring on the outside thereof.

In addition, Patent Document 3 discloses a microwave antenna processing apparatus of a planar antenna type, in which an O-ring is provided between a microwave transmitting plate and a pressing member for fixing, and a spiral shield is provided outside thereof.

(Prior art technical literature)

(Patent literature)

(Patent Document 1) Japanese Unexamined Patent Publication No. 2002-155364 (Fig. 2, etc.)

(Patent Document 2) Japanese Unexamined Patent Publication No. 2005-63986 (Fig. 1, etc.)

(Patent Document 3) Japanese Unexamined Patent Publication No. 2007-294924 (Fig. 3, etc.)

As described above, in the plasma processing apparatus, when deformation occurs in a part of a processing container such as a lid member by a process of plasma heat or a high temperature, vacuum leakage, breakage of components, or the like occurs, so that a highly reliable plasma process is performed. It becomes difficult.

An object of the present invention is to suppress deformation of a processing vessel due to heat in a plasma processing apparatus including an inductively coupled plasma processing apparatus.

The plasma processing container of the present invention is a plasma processing container for forming a processing chamber in which plasma processing is performed on a target object. This plasma processing container includes a main body container and an upper container coupled to the main body container, and functions as a vacuum chamber member, a heat insulating member, and an electrically conductive member between the main body container and the upper container. Is provided, and the main body container and the upper container are separated from each other.

In the plasma processing container of the present invention, the heat insulating member may include a heat insulating sheet divided into a plurality.

The plasma processing container of the present invention may be arranged in the order of the vacuum chamber member, the electromagnetic wave blocking member, and the heat insulating member from the inside of the processing chamber to the outside, or from the inside of the processing chamber to the outside. The vacuum chamber member, the heat insulating member, and the electromagnetic wave blocking member may be arranged in this order.

In the plasma processing container of this invention, the said heat insulation sheet may be comprised by the synthetic resin of the material whose glass transition temperature (Tg) exceeds 125 degreeC. In this case, the thermal conductivity of the heat insulation sheet in the thickness direction may be 1 W / mK or less. The synthetic resin may be at least one selected from the group consisting of polyether ether ketone (PEEK) resin, polyethylene sulfide (PPS) resin, wholly aromatic polyimide resin, polyetherimide (PEI) and MC nylon. Moreover, the plasma processing container of this invention may be in the range of 0.5 mm or more and 20 mm or less in thickness of the said heat insulation sheet which is synthetic resin.

In the plasma processing container of the present invention, the heat insulating sheet may be made of ceramics. In this case, the thermal conductivity of the heat insulation sheet in the thickness direction may be 40 W / mK or less. Moreover, the thickness of the said heat insulation sheet which is ceramic may be in the range of 5 mm or more and 20 mm or less.

Moreover, in the plasma processing container of this invention, the clearance gap in the range of 0.1 mm or more and 2 mm or less may be provided between the said main body container and the said upper container by the said heat insulation sheet.

In the plasma processing container of the present invention, the heat insulating sheet may be disposed in a recess provided in the main body container.

In the plasma processing container of the present invention, the interval between adjacent heat insulating sheets may be in a range of 1 mm or more and 3 mm or less.

Moreover, the plasma processing container of this invention may be equipped with the temperature control apparatus in the said main body container and the said upper container, respectively.

The plasma processing apparatus of the present invention includes the plasma processing vessel according to any one of the above.

A plasma processing apparatus of the present invention includes a mounting table provided in the plasma processing container, on which a target object is mounted, an antenna provided outside the processing container and forming an induction electric field in the processing container, the antenna and the A dielectric wall provided between the processing vessel, a high frequency power source for applying a high frequency power to the antenna to form an induction electric field, processing gas supply means for supplying the processing gas into the processing container, and vacuum or reduced pressure in the processing container. It may be an inductively coupled plasma processing apparatus having an exhausting means in a state.

According to the present invention, the main body container and the upper container can be thermally separated reliably by arranging a heat insulating member between the main body container and the upper container to separate the main body container and the upper container. Therefore, it becomes possible to control the temperature of the main body container and the upper container, respectively, and can prevent deformation by heat of the upper container.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically the structure of the inductively coupled plasma processing apparatus which concerns on 1st Embodiment of this invention.
FIG. 2 is an enlarged cross-sectional view of part A of FIG. 1.
It is a top view which expands and shows the main part of the upper end surface of the side part of a main body container.
4 is a cross-sectional view schematically showing the configuration of an inductively coupled plasma processing apparatus according to a second embodiment of the present invention.
5 is a sectional view showing the principal parts of a structure of an inductively coupled plasma processing apparatus according to a third embodiment of the present invention.

EMBODIMENT OF THE INVENTION Hereinafter, the inductively coupled plasma processing apparatus which concerns on embodiment of this invention is demonstrated with reference to drawings.

[First Embodiment]

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically the structure of the inductively coupled plasma processing apparatus of 1st Embodiment of this invention. In the following, the inductively coupled plasma processing apparatus is described as an example, but the present invention can be similarly applied to any plasma processing apparatus.

The inductively coupled plasma processing apparatus 1 shown in Fig. 1 performs plasma processing on a glass substrate (hereinafter simply referred to as "substrate") S for FPD, for example. Examples of the FPD include a liquid crystal display (LCD), an electro luminescence (EL) display, a plasma display panel (PDP), and the like.

The inductively coupled plasma processing apparatus 1 includes a processing container 2 having a main body container 2A and an upper container 2B.

<Body container>

The main body container 2A is a prismatic container having a bottom portion 2b and four side portions 2c. In addition, the main body container 2A may be a cylindrical container. As a material of 2 A of main body containers, electroconductive materials, such as aluminum and an aluminum alloy, are used, for example. When aluminum is used as the material of the main body container 2A, anodization (anodic oxidation treatment) is performed on the inner wall surface of the main body container 2A so that no contaminants are generated from the inner wall surface of the main body container 2A. In addition, the main body container 2A is grounded.

<Upper container>

The upper container 2B is disposed on the ceiling portion 2a, the upper portion of the main body container 2A, and divides the space in the processing container 2 into two upper and lower spaces, and a dielectric wall ( As a support member for supporting 6), a lid member 7 and a support beam 16 are provided. An antenna chamber 4 is formed in the upper container 2B, a processing chamber 5 is formed in the main body container 2A, and these two rooms are partitioned off by the dielectric wall 6. That is, the antenna chamber 4 is formed in the space above the dielectric wall 6 in the processing container 2, and the processing chamber 5 is located below the dielectric wall 6 in the processing container 2. It is formed in space. Therefore, the dielectric wall 6 constitutes the bottom of the antenna chamber 4 and constitutes the ceiling portion of the processing chamber 5. The processing chamber 5 is kept airtight, and plasma processing is performed on the substrate S there.

The dielectric wall 6 has a substantially rectangular parallelepiped shape having an upper surface and a lower surface of a substantially square shape or a substantially rectangular shape and four side surfaces. The thickness of the dielectric wall 6 is 30 mm, for example. The dielectric wall 6 is formed of a dielectric material. As the material for the dielectric wall (6), for example, a ceramic, or quartz, such as Al ₂ O ₃ is used. As an example, the dielectric wall 6 is divided into four parts. That is, the dielectric wall 6 has a 1st partial wall, a 2nd partial wall, a 3rd partial wall, and a 4th partial wall. In addition, the dielectric wall 6 may not be divided | segmented, and may be divided into the number of parts other than four.

The lid member 7 is provided below the upper container 2B. The lid member 7 is positioned and arranged at the upper end of the main container 2A. The processing member 2 is closed by arranging the lid member 7 on the main container 2A, and the processing container 2 is opened by separating the main container 2A. In addition, the lid member 7 may be integrated with the upper container 2B.

The support beam 16 has a cross shape, for example, and the four partial walls of the dielectric wall 6 are supported by the lid member 7 and the support beam 16.

The inductively coupled plasma processing apparatus 1 further includes a plurality of columnar suspenders 8 each having an upper end portion connected to the ceiling portion 2a of the upper vessel 2B. In FIG. 1, three suspenders 8 are shown, but the number of suspenders 8 is arbitrary. The support beam 16 is connected to the lower end of the suspender 8. In this way, the support beam 16 is suspended from the ceiling portion 2a of the upper container 2B by the plurality of suspenders 8, and is positioned approximately in the vertical direction in the interior of the processing container 2. It is arrange | positioned so that a horizontal state may be maintained.

The support beam 16 is formed with a gas flow path (not shown) to which the processing gas is supplied from the gas supply device 20 and a plurality of openings not shown to discharge the processing gas supplied to the gas flow path. As the material of the support beam 16, a conductive material is used. As this electroconductive material, it is preferable to use metal materials, such as aluminum. When aluminum is used as the material of the support beam 16, anodization (anodic oxidation) is performed on the surfaces inside and outside the support beam 16 so that no contaminants are generated from the surface.

<Gas supply device>

Outside the main body container 2A, a gas supply device 20 is further provided. The gas supply apparatus 20 is connected to the gas flow path which is not shown of the support beam 16 via the gas supply line 21 inserted in the hollow part of the center suspender 8, for example. The gas supply device 20 is for supplying a processing gas used for plasma processing. When the plasma processing is performed, the processing gas is supplied into the processing chamber 5 through the gas supply pipe 21, the gas flow path and the opening in the support beam 16. As the processing gas, for example, SF ₆ gas is used.

<1st high frequency supply part>

The inductively coupled plasma processing apparatus 1 further includes a high frequency antenna (hereinafter, simply referred to as an “antenna”) disposed above the dielectric wall 6 inside the antenna chamber 4, that is, outside the processing chamber 5. (13) is provided. The antenna 13 has a substantially square planar vortex shape, for example. The antenna 13 is disposed on the upper surface of the dielectric wall 6.

On the outside of the processing container 2, a matching device 14 and a high frequency power supply 15 are provided. One end of the antenna 13 is connected to the high frequency power supply 15 via the matching unit 14. The other end of the antenna 13 is connected to the inner wall of the upper container 2B and is grounded via the main body container 2A. When plasma processing is performed on the substrate S, the antenna 13 is supplied with a high frequency power (for example, 13.56 MHz high frequency power) for forming an induction field from the high frequency power supply 15. As a result, an induction electric field is formed in the processing chamber 5 by the antenna 13. This induction electric field converts the processing gas into plasma.

<Mounting stand>

The inductively coupled plasma processing apparatus 1 further includes a susceptor (mounting stand) 22, an insulator frame 24, a support 25, a bellows 26, and a gate for mounting the substrate S. FIG. The valve 27 is provided. The strut 25 is connected to a lifting device (not shown) provided below the main body container 2A, and protrudes into the processing chamber 5 through an opening formed in the bottom portion 2b of the main body container 2A. Moreover, the support | pillar 25 has a hollow part. The insulator frame 24 is provided on the support post 25. This insulator frame 24 has comprised the box shape which the upper part opened. At the bottom of the insulator frame 24, an opening is formed that extends to the hollow portion of the strut 25. The bellows 26 surrounds the support 25 and is hermetically connected to the inner wall of the insulator frame 24 and the bottom 2b of the main body container 2A. Thereby, the airtightness of the process chamber 5 is maintained.

The susceptor 22 is housed in the insulator frame 24. The susceptor 22 has a mounting surface 22A for mounting the substrate S. As shown in FIG. As the material of the susceptor 22, for example, a conductive material such as aluminum is used. When aluminum is used as the material of the susceptor 22, anodization (anodic oxidation treatment) is performed on the surface of the susceptor 22 so that no contaminants are generated from the surface.

<2nd high frequency supply part>

Outside of the processing container 2, a matching device 28 and a high frequency power supply 29 are provided. The susceptor 22 is connected to the matching unit 28 via an energizing rod inserted into the opening of the insulator frame 24 and the hollow portion of the support 25, and also via the matching unit 28. It is connected to (29). When the plasma processing is performed on the substrate S, the susceptor 22 is supplied with the high frequency power for biasing (for example, 380 kW high frequency power) from the high frequency power supply 29. This high frequency power is used to effectively attract ions in the plasma to the substrate S mounted on the susceptor 22.

<Gate valve>

The gate valve 27 is provided in the wall of the side part 2c of the main body container 2A. The gate valve 27 has an opening and closing function, maintains the airtightness of the processing chamber 5 in the closed state, and enables the transfer of the substrate S between the processing chamber 5 and the outside in the open state.

<Exhaust device>

Outside the processing container 2, an exhaust device 30 is further provided. The exhaust device 30 is connected to the processing chamber 5 via an exhaust pipe 31 connected to the bottom 2b of the main body container 2A. When plasma processing is performed on the substrate S, the exhaust device 30 exhausts air in the processing chamber 5 and maintains the interior of the processing chamber 5 in a vacuum or reduced pressure atmosphere.

<Thermostat>

The heat medium flow path 40 is provided in the wall which comprises four side parts 2c of the main body container 2A. An introduction port 40a and an outlet port 40b are provided at one end and the other end of the heat medium flow path 40. The inlet 40a is connected to the inlet tube 41, and the outlet 40b is connected to the outlet tube 42, respectively. The introduction pipe 41 and the discharge pipe 42 are connected with the chiller unit 43 as a temperature control apparatus provided in the exterior of the processing container 2.

<Connecting structure of the main body container 2A and the upper container 2B>

Next, the connection structure of the main body container 2A and the upper container 2B in the inductively coupled plasma processing apparatus 1 of this embodiment is demonstrated, referring FIG. 2 and FIG. FIG. 2 is an enlarged cross-sectional view of a portion A in FIG. 1. 3 is a plan view of the main portion, in which the upper end surface of the side portion 2c of the main body container 2A is enlarged. As shown in FIG.2 and FIG.3, on the upper end surface of the side part 2c of 2 A of main body containers, the spiral as an electromagnetic wave blocking member which also functions as an O-ring 51 as a vacuum chamber member and an electrically conductive member over the whole perimeter. The shield 53 and the heat insulating member 52 are provided. The O-ring 51, the spiral shield 53, and the heat insulating member 52 are arranged in this order from the inside (the processing chamber 5 side) of the processing container 2 to the outside. In this embodiment, by providing the spiral shield 53 at a position closer to the inside of the processing chamber 5 than the heat insulating member 52, the heat insulating member 52 can be prevented from being exposed to high frequency or plasma. Therefore, deterioration of the heat insulation member 52 is prevented, the thermal interruption effect of the main body container 2A and the upper container 2B can be ensured for a long time, and a replacement life can be extended.

<O-ring>

The O-ring 51 is a vacuum chamber member, maintains airtightness between the main body container 2A and the upper container 2B, and maintains the inside of the processing chamber 5 in a vacuum state. The O-ring 51 is fitted in the O-ring groove 61 which is a recess formed in the upper end surface of the side portion 2c of the main body container 2A. Examples of the material of the O-ring 51 include nitrile rubber (NBR), fluorine rubber (FKM), silicone rubber (Q), fluorosilicone rubber (FVMQ), perfluoropolyether rubber (FO), and acrylic rubber ( ACM) and ethylene propylene rubber (EPM) can be used.

<Spiral Shield>

The spiral shield 53 is fitted in the shield groove 63 formed in the upper end surface of the side portion 2c of the main body container 2A. The spiral shield 53 is made of metal such as aluminum, stainless steel, copper or iron, for example, to secure the conduction between the main body container 2A and the upper container 2B, and maintain the upper container 2B at a ground potential. In addition, the spiral shield 53 prevents high frequency or plasma leakage from between the main body container 2A and the upper container 2B.

<Insulation member>

The heat insulating member 52 is fitted in the groove 62 for heat insulating members formed in the upper end surface of the side part 2c of 2 A of main body containers. The heat insulation member 52 is comprised by the some heat insulation sheet 54 of a lead shape. That is, the heat insulation sheet 54 has comprised the rectangular upper surface and the bottom surface, and the thin plate shape which has four side surfaces. The upper surface of the heat insulation sheet 54 is a surface which abuts on the lower end (that is, the lower end of the lid member 7) of the upper container 2B. The heat insulating member 52 can withstand the temperature reached by the main body container 2A and can be formed of, for example, a synthetic resin, ceramics, or the like as a material having a low thermal conductivity. desirable.

When using synthetic resin as the heat insulating member 52, it is preferable that glass transition temperature (Tg) exceeds 125 degreeC, for example. When the glass transition temperature Tg of the heat insulating member 52 is 125 degrees C or less, it may deform | transform by the heat by the plasma in the process chamber 5, and a heat insulation effect may be impaired.

The thermal conductivity of the heat insulating member 52 is, for example, 1 W / mK when a synthetic resin is used as the material of the heat insulating sheet 54 in order to minimize the heat conductivity between the main body container 2A and the upper container 2B. The following is preferable, and when using ceramics, 40 W / mK or less is preferable, for example.

When the large-area substrate S is processed in the inductively coupled plasma processing apparatus 1, the heat insulating member 52 can withstand the pressure caused by the upper container 2B when the processing chamber 5 is in a vacuum state. It is desirable to have a compressive strength that is.

In consideration of the above physical properties, as the heat insulating member 52, for example, polyether ether ketone (PEEK) resin, polyethylene sulfide (PPS) resin, wholly aromatic polyimide resin, polyetherimide (PEI), MC nylon, etc. resin or composite, it is possible to use ceramics such as zirconia (ZnO _2), alumina (Al ₂ O _3).

The heat insulating member 52 is divided into the plurality of rectangular heat insulating sheets 54. Thus, by dividing | segmenting into the some heat insulation sheet 54, arrangement | positioning to the large processing container 2 for processing the board | substrate for FPD, for example becomes easy. It is preferable to set the space | interval of adjoining heat insulation sheets 54 to the space | interval so that adjacent heat insulation sheets 54 may mutually contact, when each heat insulation sheet 54 thermally expands at the temperature of 100 degreeC or more, for example, For example, in the range of 1 mm or more and 3 mm or less, it can be about 2 mm preferably.

As for the thickness of each heat insulating sheet 54 which comprises the heat insulating member 52, as a material of the heat insulating sheet 54, when using synthetic resin, it is preferable to make it into the range of 0.5 mm or more and 20 mm or less, for example, When using, it is preferable to set it in the range of 5 mm or more and 20 mm or less, for example. In addition, the thickness of each heat insulation sheet 54 is larger than the depth of the groove | channel 62 for heat insulation members, and the upper surface of the heat insulation sheet 54 protrudes from the groove | channel 62 for heat insulation members.

As enlarged in FIG. 2, the gap CL is provided between the main body container 2A and the upper container 2B by the heat insulating member 52. This gap CL ensures sufficient heat insulation between the main body container 2A and the upper container 2B, and has a size capable of absorbing the deformation amount even when the upper container 2B is deformed by heat, for example. It is set. Therefore, the clearance gap CL is provided in the range of 0.1 mm or more and 2 mm or less, for example. If the clearance gap CL is less than 0.1 mm, the heat insulation between the main body container 2A and the upper container 2B tends to be insufficient, and even if the upper container 2B is deformed by heat, the main container 2A and the upper container ( Sufficient clearance cannot be secured between 2B). When the clearance gap CL exceeds 2 mm, heat insulation performance improves, but the vacuum holding function by the O-ring 51 and the high frequency and the plasma blocking function by the spiral shield 53 fall, and also the main body container 2A It is also difficult to secure the conduction between the upper containers 2B.

Each heat insulation sheet 54 is being fixed to the side part 2c of the main body container 2A with the some screw 55, for example in the state fitted into the groove | channel 62 for heat insulation members. In addition, the fixing method of the heat insulation sheet 54 does not have a restriction | limiting in particular.

Next, the processing operation at the time of performing a plasma process with respect to the board | substrate S using the inductively coupled plasma processing apparatus comprised as mentioned above is demonstrated.

First, while the gate valve 27 is open, the board | substrate S is carried in in the process chamber 5 by the conveyance mechanism (not shown), and it mounts on the mounting surface 22A of the susceptor 22, The substrate S is fixed on the susceptor 22.

Next, the processing gas is discharged from the gas supply device 20 through the gas supply pipe 21, the gas flow path (not shown) in the support beam 16, and the plurality of openings into the processing chamber 5, and the exhaust device ( By evacuating the inside of the processing chamber 5 via the exhaust pipe 31 by 30), the inside of the processing container is maintained in a pressure atmosphere of, for example, about 1.33 kPa.

Next, a high frequency of 13.56 MHz is applied to the antenna 13 from the high frequency power supply 15, thereby forming a uniform induction field in the processing chamber 5 via the dielectric wall 6. The induction electric field thus formed causes the processing gas to be plasma-formed in the processing chamber 5 to generate a high density inductively coupled plasma. The ions in the plasma generated in this way are effectively attracted to the substrate S by the high frequency power applied from the high frequency power supply 29 to the susceptor 22, and uniform plasma processing is performed on the substrate S.

During the plasma treatment, the main body container 2A is heated to a high temperature by the heat of the plasma, but because it is thermally separated by the heat insulating member 52 between the main body container 2A and the upper container 2B, the upper container ( Deformation, such as distortion, caused by excessive temperature rise of 2B) can be suppressed, and vacuum leakage and breakage of the dielectric wall 6 can be prevented. In addition, since the temperature control of the main body container 2A independent of the upper container 2B is enabled by the chiller unit 43, the temperature control of the plasma process performed in the processing chamber 5 becomes easy. This can increase the stability of the process. In addition, in this embodiment, the temperature regulation installation of the upper container 2B is abbreviate | omitted by thermally separating between the main body container 2A and the upper container 2B by the heat insulation member 52. In addition, in FIG.

<Experiment Result>

Here, the experimental result which confirmed the effect of this invention is demonstrated. The temperature of the main body container 2A and the upper container 2B was measured, respectively, while performing the plasma etching process with respect to the thin film of the surface of the board | substrate S using the inductively coupled plasma processing apparatus 1 of the structure similar to FIG. . As a result, the temperature of the main body container 2A was between 96-101 degreeC, while the temperature of the upper container 2B is between 48-50 degreeC, and between the main body container 2A and the upper container 2B. The temperature difference of about 50 degreeC was able to be ensured. From the measured data, it was confirmed that the heat conduction member 52 interposed between the main container 2A and the upper container 2B can effectively block the heat conduction from the main container 2A to the upper container 2B. .

As described above, in the inductively coupled plasma processing apparatus 1 of the present embodiment, the heat insulating member 52 is disposed between the main body container 2A and the upper container 2B, and the main body container 2A and the upper container are disposed. By not directly contacting 2B, the main body container 2A and the upper container 2B can be thermally separated reliably. As a result, the temperature control of the main body container 2A and the upper container 2B can be performed, respectively, and the simplification of temperature control equipment such as a chiller can be realized. In addition, it is possible to prevent occurrence of vacuum leakage and breakage of the dielectric wall 6 due to thermal deformation of the upper container 2B.

Second Embodiment

Next, an inductively coupled plasma processing apparatus according to a second embodiment of the present invention will be described with reference to FIG. 4. It is sectional drawing which shows typically the structure of the inductively coupled plasma processing apparatus of 2nd Embodiment of this invention. The inductively coupled plasma processing apparatus 101 according to the second embodiment is the inductively coupled plasma processing apparatus according to the first embodiment except that not only the temperature control device is provided in the upper container 2B but also in the main container 2A. Same as (1). Therefore, in FIG. 4, the same code | symbol is attached | subjected about the structure similar to FIG. 1, and description is abbreviate | omitted.

As shown in FIG. 4, the heat medium flow path 70 is provided in the wall which comprises the upper container 2B. An introduction port 70a and a discharge port 70b are provided at one end and the other end of the heat medium flow path 70. The inlet 70a is connected to the inlet tube 71 and the outlet 70b is connected to the outlet tube 72, respectively. The introduction pipe 71 and the discharge pipe 72 are connected to the chiller unit 73 provided outside the processing container 2. As described above, in the inductively coupled plasma processing apparatus 101 of the present embodiment, as shown in FIG. 4, in addition to the chiller unit 43 provided in the main body container 2A as the first temperature regulating device, the second temperature regulation is performed. The chiller unit 73 provided in the upper container 2B is provided as an apparatus. In this embodiment, since between the main body container 2A and the upper container 2B is thermally isolate | separated by the heat insulation member 52, the main body container by the chiller unit 43 and the chiller unit 73 is carried out. Temperature control can be performed independently of 2A and the upper container 2B, respectively. Therefore, the freedom of temperature control of the plasma process performed in the process chamber 5 becomes high, and the stability of a process can be improved.

The other structure and effect in this embodiment are the same as that of 1st embodiment.

[Third Embodiment]

Next, an inductively coupled plasma processing apparatus according to a third embodiment of the present invention will be described with reference to FIG. 5. It is sectional drawing which shows typically the structure of the principal part of the inductively coupled plasma processing apparatus of 3rd Embodiment of this invention. FIG. 5 is an enlarged view of a portion (part A) corresponding to FIG. 2 in the inductively coupled plasma processing apparatus 1 of the first embodiment. The inductively coupled plasma processing apparatus according to the present embodiment is the same as the inductively coupled plasma processing apparatus 1 of the first embodiment except for the configuration of the A portion. Therefore, in FIG. 5, the same code | symbol is attached | subjected about the structure similar to FIG. 1, and description is abbreviate | omitted.

As shown in FIG. 5, in the inductively coupled plasma processing apparatus according to the present embodiment, the O-ring 51, the heat insulating member 52, and the spiral shield are formed on the upper end surface of the side portion 2c over the entire circumference. 53) is arranged. The O-ring 51, the heat insulating member 52, and the spiral shield 53 are arranged in this order from the inside (the processing chamber 5 side) of the processing container 2 to the outside. The structure and action of the O-ring 51, the heat insulating member 52, and the spiral shield 53 are the same as in the first embodiment.

The other structure and effect in this embodiment are the same as that of 1st embodiment.

As mentioned above, although embodiment of this invention was described in detail for the purpose of illustration, this invention is not restrict | limited to the said embodiment. For example, in the above embodiment, the inductively coupled plasma apparatus has been exemplified, but the present invention can be applied without limitation as long as it is a plasma processing apparatus having a processing container divided into a plurality of parts. The present invention can be applied to other types of plasma devices, such as a device, an ECR (Electron Cyclotron Resonance) plasma device, and a helicon wave plasma device. Moreover, it is not limited to a dry etching apparatus, It is equally applicable to a film forming apparatus, an ashing apparatus, etc.

In addition, the present invention is not limited to using the FPD substrate as an object to be processed, but is also applicable to a case where a semiconductor wafer or a solar cell substrate is used as the object to be processed.

In addition, in each said embodiment, although the heat insulation member 52 was arrange | positioned at 2 A of main body containers, the heat insulation member 52 can also be arrange | positioned at the upper container 2B side.

1: Inductively Coupled Plasma Processing Apparatus 2A: Main Body Container
2B: upper container 4: antenna chamber
5: process chamber 6: dielectric wall
7: cover member 8: suspender
13 antenna 14 matching device
15: high frequency power source 16: support beam
20 gas supply device 21 gas supply pipe
22: susceptor 22A: mounting surface
24: insulator frame 25: holding
26: bellows 28: matching device
29: high frequency power supply 30: exhaust device
31: exhaust pipe 51: O-ring
52: heat insulation member 53: spiral shield
54: heat insulation sheet 61: groove for O-ring
62: groove for insulation member 63: groove for shield

Claims (14)

A plasma processing container for forming a processing chamber in which plasma processing is performed on a substrate for a flat panel display,
With a body container,
An upper container coupled to the body container
And
Between the main body container and the upper container, a vacuum seal member, a heat insulating member, and an electromagnetic wave shielding member are interposed, and the main body container and the upper container are separated from each other.
The heat insulating member is composed of a plurality of heat insulating sheets,
The plurality of heat insulating sheets are not less than 1 mm from each other such that adjacent heat insulating sheets contact each other when the plurality of heat insulating sheets thermally expands at a temperature of 100 ° C. or more in a groove for a heat insulating member formed over the entire circumference of the upper surface of the main body container. It is fitted to adjoin at intervals within the range of 3 mm or less,
The plurality of insulating sheets has a thin plate shape having a rectangular top and bottom and four sides,
The thickness of each heat insulation sheet of the said plurality of heat insulation sheets is larger than the depth of the said groove | channel for heat insulation members, The upper surface of the said several heat insulation sheet protrudes from the groove | channel for heat insulation members, and contact | connects the lower end of the said upper container,
The gap between 0.1 mm and 2 mm is provided between the main body container and the upper container by the plurality of heat insulating sheets arranged over the entire circumference of the upper end surface of the main body container.
Plasma processing vessel, characterized in that.
The method of claim 1,
Plasma processing container disposed in the order of the vacuum chamber member, the electromagnetic wave shielding member, and the heat insulating member from the inside to the outside of the processing chamber.
The method of claim 1,
Plasma processing container disposed in the order of the vacuum chamber member, the heat insulating member, and the electromagnetic wave shielding member from the inside to the outside of the processing chamber.
The method according to any one of claims 1 to 3,
The said heat insulation sheet is a plasma processing container comprised by the synthetic resin of the material whose glass transition temperature (Tg) exceeds 125 degreeC.
The method of claim 4, wherein
The thermal conductivity of the said heat insulation sheet in the thickness direction is 1 W / mK or less plasma processing containers.
The method of claim 4, wherein
The synthetic resin is at least one plasma treatment vessel selected from the group consisting of polyether ether ketone (PEEK) resin, polyethylene sulfide (PPS) resin, wholly aromatic polyimide resin, polyetherimide (PEI) and MC nylon.
The method of claim 4, wherein
The thickness of the said heat insulation sheet is a plasma processing container in the range of 0.5 mm or more and 20 mm or less.
The method according to any one of claims 1 to 3,
The said heat insulating sheet is a plasma processing container comprised by ceramics.
The method of claim 8,
The thermal conductivity of the said heat insulation sheet in the thickness direction is 40 W / mK or less plasma processing containers.
The method of claim 8,
The thickness of the said heat insulation sheet is a plasma processing container in the range of 5 mm or more and 20 mm or less.
delete The method according to any one of claims 1 to 3,
The plasma processing container provided with the temperature control apparatus in the said main body container and the said upper container, respectively.
The plasma processing apparatus provided with the plasma processing container of any one of Claims 1-3.
The method of claim 13,
A mounting table provided in the plasma processing container and on which the substrate for the flat panel display is mounted;
An antenna provided outside the processing container and forming an induction electric field in the processing container;
A dielectric wall provided between the antenna and the processing container;
A high frequency power source for applying high frequency power to the antenna to form an induction field;
Processing gas supply means for supplying a processing gas into the processing container;
Exhaust means for bringing the processing container into a vacuum or reduced pressure state
A plasma processing apparatus which is an inductively coupled plasma processing apparatus having a.

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