KR102076241B1 - Ultraviolet Light Emitting Device - Google Patents

Abstract

The ultraviolet light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer disposed on the first conductive semiconductor layer and emitting light in an ultraviolet wavelength band, a second conductive type first semiconductor layer disposed on the active layer, A second conductive type semiconductor disposed on the second conductive type semiconductor layer, and disposed on the second conductive type reflective layer and the second conductive type reflective layer which reflects light at different reflectances according to the direction in which the light emitted from the active layer is incident; And a second conductivity type reflective layer and a second conductivity type second semiconductor layer include recesses and convex portions, and the recesses expose the second conductivity type first semiconductor layers.

Description

Ultraviolet Light Emitting Device

The embodiment relates to an ultraviolet light emitting device.

A light emitting diode (LED) is a kind of semiconductor device that transmits and receives a signal by converting electricity into infrared light or light using characteristics of a compound semiconductor.

Group III-V nitride semiconductors have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their physical and chemical properties.

These light emitting diodes do not contain environmentally harmful substances such as mercury (Hg) used in existing lighting equipment such as incandescent lamps and fluorescent lamps, so they have excellent eco-friendliness and have advantages such as long life and low power consumption. It is replacing them.

1 is a cross-sectional view of a conventional light emitting device, and includes a substrate 10, a light emitting structure 20, an n-type electrode 32, and a p-type electrode 34.

The light emitting structure 20 disposed on the substrate 10 of FIG. 1 includes an n-type semiconductor layer 22, an active layer 24, and a p-type semiconductor layer 26. The n-type electrode 32 is disposed on the n-type semiconductor layer 22, and the p-type electrode 34 is disposed on the p-type semiconductor layer 26.

If light in the ultraviolet wavelength band is emitted from the active layer 24 and each of the n-type and p-type semiconductor layers 22 and 26 is made of GaN, light is absorbed in the n-type and p-type GaN layers 22 and 26. The light extraction efficiency can be deteriorated. In order to improve this, when the n-type and p-type semiconductor layers 22 and 26 are each made of AlGaN, the amount of light may be improved, but injection of holes through the p-type AlGaN layer 26A may not be easy. To solve this problem, a p-type GaN layer 26B may be further disposed on the p-type AlGaN layer 26A. However, since light is absorbed in the p-type GaN layer 26B, the light extraction efficiency is inevitably lowered.

The embodiment provides an ultraviolet light emitting device having improved light extraction efficiency.

The ultraviolet light emitting device of the embodiment includes a first conductive semiconductor layer; An active layer disposed on the first conductive semiconductor layer and emitting light in an ultraviolet wavelength band; A second conductivity type first semiconductor layer disposed on the active layer; A second conductivity type reflection layer disposed on the second conductivity type first semiconductor layer and reflecting the light at a different reflectance according to a direction in which light emitted from the active layer is incident; And a second conductivity type second semiconductor layer disposed on the second conductivity type reflective layer, wherein the second conductivity type reflective layer and the second conductivity type second semiconductor layer include recesses and convex portions, and the recesses include: The second conductive first semiconductor layer is exposed.

The ultraviolet light emitting device may include a first electrode disposed on the first conductive semiconductor layer; And a 2-1 electrode disposed on an upper surface of the convex portion.

The ultraviolet light emitting device further includes a recess reflection layer disposed on the exposed second conductive type first semiconductor layer in the recess.

The ultraviolet light emitting device further includes a second-2 electrode disposed on a side surface of the convex portion to connect the second-1 electrode and the recessed reflective layer.

The second conductivity type reflective layer may have an omni-directional reflector (ODR) or distributed Bragg reflector (DBR) structure.

The recess may have a planar shape of polygon, circle or bar shape.

The ultraviolet light emitting device further includes a substrate, wherein the first conductivity type semiconductor layer, the active layer, the second conductivity type first semiconductor layer, the second conductivity type reflective layer, and the second conductivity type second semiconductor layer are It is disposed sequentially on the substrate.

Alternatively, the ultraviolet light emitting device further includes a support substrate, wherein the second conductive second semiconductor layer, the second conductive reflective layer, the second conductive first semiconductor layer, the active layer, and the first conductive type are provided. The semiconductor layer is sequentially disposed on the support substrate.

Alternatively, the ultraviolet light emitting device is a sub-mount; First and second metal layers spaced apart from each other in a horizontal direction on the sub-mount; A first bump disposed between the first metal layer and the first electrode; And a second bump disposed between the second metal layer and the 2-1 electrode.

Each of the first electrode, the second-1, and the second-2 electrode may be formed of a material having at least one of reflective and transmissive properties.

Each of the first conductivity type semiconductor layer and the second conductivity type first semiconductor layer may include AlGaN, and the second conductivity type second semiconductor layer may include GaN or InAlGaN.

The width of the recess may be greater than the width of the convex portion.

In the ultraviolet light emitting device according to the embodiment, even if the second conductivity type reflective layer has a different reflectance according to the direction of incident light, recesses and convex portions are formed in the second conductivity type reflective layer and the second conductivity type second semiconductor layer. And a 2-1 electrode, a recess reflection layer, and a 2-2 electrode including a reflective or translucent material on the convex portion to reflect the light irrespective of the direction of incident light, thereby increasing the light extraction efficiency. have.

1 is a cross-sectional view of a conventional light emitting device.
2 is a plan view of an ultraviolet light emitting device according to the embodiment.
3 is a cross-sectional view taken along the line AA ′ illustrated in FIG. 2.
4A and 4B are views exemplarily illustrating characteristics of the second conductivity type reflective layer.
5A to 5D illustrate various planar shapes of recesses and convex portions according to embodiments.
6 is a sectional view showing an ultraviolet light emitting device according to another embodiment.
7 is a sectional view of an ultraviolet light emitting device according to still another embodiment;
8 is a sectional view showing an ultraviolet light emitting device according to still another embodiment;
9 is a sectional view of an ultraviolet light emitting device according to still another embodiment;
10 is a sectional view of an ultraviolet light emitting device according to still another embodiment;
11 is a sectional view of an ultraviolet light emitting device according to still another embodiment;
12A to 12F are cross-sectional views illustrating a method of manufacturing the ultraviolet light emitting device illustrated in FIG. 3.
13 is a cross-sectional view of a light emitting device package according to the embodiment.
14 is a perspective view of an air sterilization apparatus including a light emitting device package according to an embodiment.
15 illustrates a display device including a light emitting device package according to an exemplary embodiment.
16 illustrates a head lamp including a light emitting device package according to an embodiment.
17 illustrates a lighting device including a light emitting device or a light emitting device package according to an embodiment.

Hereinafter, the present invention will be described in detail with reference to the following examples, and the present invention will be described in detail with reference to the accompanying drawings. However, embodiments according to the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. Embodiments of the present invention are provided to more fully describe the present invention to those skilled in the art.

In the description of the embodiment according to the present invention, when described as being formed on the "on" or "on" (under) of each element, the (up) or down (down) (on or under) includes both the two elements are in direct contact with each other (directly) or one or more other elements are formed indirectly between the two elements (indirectly). In addition, when expressed as "up" or "on (under)", it may include the meaning of the downward direction as well as the upward direction based on one element.

Furthermore, the relational terms used below, such as "first" and "second," "upper" and "lower" and the like, do not necessarily require or imply any physical or logical relationship or order between such entities or elements. It may be used only to distinguish one entity or element from another entity or element.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

2 is a plan view of the ultraviolet light emitting device 100A according to the embodiment, and FIG. 3 is a cross-sectional view taken along the line AA ′ of FIG. 2.

2 and 3, the ultraviolet light emitting device 100A includes a substrate 110, a buffer layer 112, a light emitting structure 120, a first electrode 132, a 2-1 electrode 134-1, and And a recess reflection layer 134-2.

The substrate 110 may include a conductive material or a non-conductive material. For example, the substrate 110 may include at least one of sapphire (Al ₂ O ₃ ), AlN, GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs, and Si.

In order to improve the difference in thermal expansion coefficient and lattice mismatch between the substrate 110 and the light emitting structure 120, a buffer layer (or transition layer) 112 may be disposed between them 110 and 120. The buffer layer 112 may include, but is not limited to, at least one material selected from the group consisting of Al, In, N, and Ga, for example. In addition, the buffer layer 112 may have a single layer or a multilayer structure.

The light emitting structure 120 includes a first conductivity type semiconductor layer 122, an active layer 124, and a second conductivity type semiconductor layer 126 sequentially disposed on the buffer layer 112.

The first conductive semiconductor layer 122 may be disposed on the buffer layer 112, and may be implemented as a compound semiconductor such as a group III-V or group II-VI doped with the first conductive dopant. When the first conductivity-type semiconductor layer 122 is an n-type semiconductor layer, the first conductivity-type dopant may be an n-type dopant and may include Si, Ge, Sn, Se, Te, but is not limited thereto.

For example, the first conductivity type semiconductor layer 122 has a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may include a semiconductor material. The first conductive semiconductor layer 122 may include any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.

The active layer 124 is disposed on the first conductive semiconductor layer 122, and is injected through the electrons (or holes) and the second conductive semiconductor layer 126 that are injected through the first conductive semiconductor layer 122. The holes (or electrons) that meet each other and emit light having energy determined by an energy band inherent in the material forming the active layer 124.

The active layer 124 may include at least one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. It can be formed as one.

The well layer / barrier layer of the active layer 124 may be formed of any one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. However, the present invention is not limited thereto. The well layer may be formed of a material having a bandgap energy lower than the bandgap energy of the barrier layer.

A conductive clad layer (not shown) may be formed on or under the active layer 124. The conductive clad layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 124. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, or a superlattice structure. In addition, the conductive clad layer may be doped with n-type or p-type.

According to an embodiment, the active layer 124 emits light in the ultraviolet wavelength band. Here, the ultraviolet wavelength band means a wavelength band of 100 nm to 400 nm. In particular, the active layer 124 may emit light in the wavelength range of 100 nm to 280 nm.

The second conductivity-type semiconductor layer 126 is disposed on the active layer 124 and may be formed of a semiconductor compound. The second conductivity-type semiconductor layer 126 may be formed of a compound semiconductor such as a III-V group or a II-VI group. For example, the second conductivity-type semiconductor layer 126 is a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). It may include. The second conductive semiconductor layer 126 may be doped with a second conductive dopant. When the second conductivity type semiconductor layer 126 is a p type semiconductor layer, the second conductivity type dopant may include Mg, Zn, Ca, Sr, Ba, or the like as a p type dopant.

The first conductive semiconductor layer 122 may be an n-type semiconductor layer, and the second conductive semiconductor layer 126 may be a p-type semiconductor layer. Alternatively, the first conductive semiconductor layer 122 may be a p-type semiconductor layer, and the second conductive semiconductor layer 126 may be an n-type semiconductor layer.

The light emitting structure 120 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

If the active layer 124 emits light in the ultraviolet wavelength band, according to the embodiment, the second conductive semiconductor layer 126 may include the second conductive first semiconductor layer 126A and the second conductive reflective layer 126B. ) And the second conductivity type second semiconductor layer 126C.

The second conductivity type first semiconductor layer 126A is disposed on the active layer 124. Each of the second conductivity type first semiconductor layer 126A and the first conductivity type semiconductor layer 122 may include AlGaN. This is because AlGaN absorbs less light in the ultraviolet wavelength band than GaN or InAlGaN.

If the first conductivity type is n type and the second conductivity type is p type, the second conductivity type first semiconductor layer 126A may also serve as an electron blocking layer (EBL). Alternatively, the second conductivity-type first semiconductor layer 126A serving as the electron blocking layer may have an AlGaN / AlGaN superlattice layer structure or an AlGaN bulk layer structure.

The second conductive second semiconductor layer 126C is disposed on the second conductive first semiconductor layer 126A. The second conductive second semiconductor layer 126C serves to improve the electrical characteristics of the ultraviolet light emitting device 100A by smoothly supplying holes to the active layer 124 from the 2-1 electrode 134-1. To this end, the second conductivity-type second semiconductor layer 126C may include, for example, GaN or InAlGaN. However, since GaN and InAlGaN absorb more light in the ultraviolet wavelength band than AlGaN, the light extraction efficiency may decrease due to the presence of the second conductivity type second semiconductor layer 126C. To prevent this, the second conductivity type reflective layer 126B may be disposed between the second conductivity type first semiconductor layer 126A and the second conductivity type second semiconductor layer 126C. The second conductivity type reflective layer 126B disposed on the second conductivity type first semiconductor layer 126A reflects light in the ultraviolet wavelength band emitted from the active layer 124 toward the substrate 110. To this end, the second conductivity type reflective layer 126B may have, for example, an omni-directional reflector (ODR) or a distributed Bragg reflector (DBR) structure.

Here, the DBR structure may be a structure in which a low refractive index layer and a high refractive index layer are alternately stacked with a thickness of “mλ / 4n”. λ represents the wavelength of light emitted from the active layer 124, n represents the refractive index of the medium, and m is odd. The low refractive index layer may include, for example, silicon oxide (SiO ₂ , 1.4 refractive index) or aluminum oxide (Al ₂ O ₃ , refractive index 1.6), and the high refractive index layer may include, for example, silicon nitride (Si ₃ N _4). , Refractive index 2.05 to 2.25), titanium nitride (TiO ₂ , refractive index 2 or more) or Si-H (refractive index 3 or more), but the embodiment is not limited thereto. The number of low and high refractive index layers may vary.

The ODR structure may be a structure in which a low refractive index layer is formed on the metal reflective layer and the metal reflective layer. The metal reflective layer may be Ag or Al and the low refractive index layer may be a transparent material such as SiO ₂ , Si ₃ N ₄ , MgO. Alternatively, the ODR structure may be a structure in which a layer in which a SiO ₂ layer and a TiO ₂ layer are stacked is repeatedly stacked in pairs, but embodiments are not limited thereto.

ODR or DBR implementing the second conductivity type reflective layer 126B has a different reflectance depending on the direction in which light in the ultraviolet wavelength band is incident on the second conductivity type reflective layer 126B.

4A and 4B are views exemplarily illustrating characteristics of the second conductivity type reflective layer 126B. 4A illustrates an angle (0 °, ± 15 °, ±) in which light emitted from the active layer 124 passes through the second conductivity type first semiconductor layer 126A and then enters the second conductivity type reflection layer 126B. 4B is a graph showing the reflectance of the second conductivity type reflective layer 126B, the horizontal axis showing the horizontal position of the ultraviolet light emitting element 100A, and the vertical axis showing the reflectance.

If the second conductivity type reflective layer 126B is implemented as a DBR, as shown in FIG. 4A, the light emitted from the active layer 124 is perpendicular to the DBR 126B (ie, 0 ° in FIG. 4A). When incident to 4 X of 4b), the light reflectance at the DBR 126B becomes maximum as shown in FIG. 4B. However, when light emitted from the active layer 124 enters the DBR 126B while moving away from the vertical direction, as shown in FIG. 4B, the light reflectance at the DBR 126B gradually decreases, resulting in low light extraction efficiency. Can be. For example, when light enters DBR 126B at 30 °, the light reflectance at DBR 126B is smaller than light reflectance at 15 °.

As described above, in order to solve the phenomenon in which the light reflectance varies depending on the direction in which light is incident on the second conductivity type reflective layer 126B, according to the embodiment, the second conductivity type reflective layer 126B and the second conductivity type agent are made. The second semiconductor layer 126C includes recesses and concave portions as illustrated in FIGS. 2 and 3. Here, the recessed part and the convex part have a concave part (GP: Groove Part) (or concave part) and a convex part (RP: Rod Part) (or convex part) as an uneven pattern. In the recess GP, the second conductivity-type first semiconductor layer 126A is exposed.

According to an embodiment, in the recess and the convex portion, the width W1 of the concave portion GP may be different from the width W2 of the concave portion RP. For example, W1 may be greater than W2. In addition, at least one of W1 and W2 may be set in consideration of the operating voltage Vf of the ultraviolet light emitting device 100A.

Meanwhile, the first electrode 132 is disposed on the first conductivity type semiconductor layer 122 exposed by mesa etching. The first electrode 132 may include a material in ohmic contact to play an ohmic role so that a separate ohmic layer (not shown) may not need to be disposed, and a separate ohmic layer may be disposed below the first electrode 132. It may be arranged.

The 2-1 electrode 134-1 is disposed on the upper surface of the convex portion RP, and the recess reflection layer 134-2 is disposed on the second conductive type first semiconductor layer 122 exposed from the recess GP. do.

As described above, the second conductivity type reflective layer 126B and the second conductivity type second semiconductor layer 126C have a concave-convex pattern, and the second-first electrode 134-1 and the recess portion reflective layer 134-2. In this case, a phenomenon in which the reflectance varies depending on the direction of light incident on the second conductivity type reflective layer 126B may be reduced.

5A to 5D illustrate various planar shapes of recesses and convex portions according to embodiments.

The recesses and the convex portions formed in the second conductivity-type reflective layer 126B and the second conductivity-type second semiconductor layer 126C illustrated in FIG. 2 are rectangular planar shapes, but embodiments are not limited thereto. That is, the recessed portions and the convex portions may be circular planar shapes as illustrated in FIGS. 5A and 5B, various polygonal planar shapes such as hexagons illustrated in FIG. 5D, and bars as illustrated in FIG. 5C. It may be a planar shape of the form.

In addition, as illustrated in FIGS. 2, 5A, 5C, and 5D, the sizes of the plurality of recesses may all be the same, and as illustrated in FIG. 5B, the sizes of the plurality of recesses may be different from each other.

In addition, the etching process for forming the pattern of the recessed portion and the concave portion shown in Figure 5d may be easier than the etching process for forming the pattern of the recessed portion and the concave portion shown in Figures 2, 5a to 5c.

6 is a sectional view of an ultraviolet light emitting device 100B according to another embodiment.

Referring to FIG. 6, the ultraviolet light emitting device 100B further includes a second-2 electrode 134-3. Except for this, since the ultraviolet light emitting device 100B illustrated in FIG. 6 is the same as the ultraviolet light emitting device 100A illustrated in FIGS. 2 and 3, redundant descriptions using the same reference numerals will be omitted.

The second-second electrode 134-3 is disposed on the side of the convex portion RP at the recessed portion and the convex portion, and electrically connects the 2-1 electrode 134-1 and the recessed reflective layer 134-2 to each other.

Each of the first electrode 132, the second-first electrode 134-1, the main reflective layer 134-2, and the second-second electrode 134-3 has at least one of reflective and transmissive properties. The material may be formed of, for example, a metal, and may be made of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, and an optional combination thereof.

In particular, each of the second-first electrode 134-1, the recess reflection layer 134-2, and the second-second electrode 134-3 may be a transparent conductive oxide (TCO). For example, each of the 2-1 electrode 134-1, the recess reflection layer 134-2, and the 2-2 electrode 134-3 may be formed of the above-described metal material, indium tin oxide (ITO), and indium (IZO). zinc oxide (IZTO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), It may include, but is not limited to, at least one of gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO. In particular, the second-first electrode 134-1 may include a material in ohmic contact with the second conductive second semiconductor layer 126C, and the recessed reflective layer 134-2 may include the second conductive first semiconductor layer. And material in ohmic contact with 126A.

Also, in the ultraviolet light emitting device 100B illustrated in FIG. 6, each of the second-first electrode 134-1 and the recessed reflective layer 134-2 may be formed as a single layer or a multilayer of reflective electrode material having ohmic characteristics. . If the 2-1 electrode 134-1 and the recess reflection layer 134-2 each perform an ohmic role, a separate ohmic layer (not shown) may not be formed.

7 is a sectional view of an ultraviolet light emitting device 100C according to still another embodiment.

Referring to FIG. 7, the ultraviolet light emitting device 100C does not include the recessed reflective layer 134-2. Except for this, since the ultraviolet light emitting device 100C illustrated in FIG. 7 is the same as the ultraviolet light emitting device 100A illustrated in FIGS. 2 and 3, redundant description will be omitted using the same reference numerals.

In the ultraviolet light emitting device 100B illustrated in FIG. 6, the recessed reflective layer 134-2 connected to the 2-1 electrode 134-1 by the 2-2 electrode 134-3 is a second electrode. 134 may serve. Accordingly, the area of the second electrode 134 is wider in the ultraviolet light emitting device 100B illustrated in FIG. 6 than in the ultraviolet light emitting devices 100A and 100C illustrated in FIGS. 3 and 7, so that many holes are formed in the active layer 124. It may be provided as.

3, 6, and 7, the UV light emitting devices 100A, 100B, and 100C are horizontal structures in which the substrate 110 is disposed under the first conductive semiconductor layer 122. It is not limited to this. That is, according to another embodiment, the ultraviolet light emitting device may have a vertical type or a flip bonding structure.

8 to 10 are cross-sectional views of ultraviolet light emitting devices 100D, 100E, and 100F according to still another embodiment of the vertical structure.

Since the ultraviolet light emitting devices 100A to 100C illustrated in FIGS. 3, 6, and 7 have a horizontal structure, the first conductive semiconductor layer 122, the active layer 124, and the second conductive first semiconductor layer 126A ), The second conductivity type reflective layer 126B, and the second conductivity type second semiconductor layer 126C are sequentially disposed on the substrate 110. On the other hand, since the ultraviolet light emitting devices 100D to 100F illustrated in FIGS. 8 to 10 have a vertical structure, the second conductivity type second semiconductor layer 126C, the second conductivity type reflective layer 126B, and the second conductivity type The first semiconductor layer 126A, the active layer 124, and the first conductive semiconductor layer 122 are sequentially disposed on the supporting substrate 140. Except for this difference, each of the ultraviolet light emitting devices 100D, 100E, and 100F illustrated in FIGS. 8 to 10 is the same as each of the ultraviolet light emitting devices 100A, 100B, and 100C illustrated in FIGS. 2, 6, and 7. Therefore, redundant description is omitted.

The ultraviolet light emitting device 100D having the vertical bonding structure illustrated in FIG. 8 includes the light emitting structure 120, the second-first electrode 134-1, the recessed reflective layer 134-2, the support substrate 140, and the first substrate. Electrode 142. The ultraviolet light emitting device 100E having the vertical bonding structure illustrated in FIG. 9 further includes a second-2 electrode 134-3 in the structure of the ultraviolet light emitting device 100D illustrated in FIG. 8. In the ultraviolet light emitting device 100F of the vertical bonding structure illustrated in FIG. 10, the recess reflection layer 134-2 is omitted in the structure of the ultraviolet light emitting device 100E illustrated in FIG. 8.

The support substrate 140 may include a conductive material or a non-conductive material. For example, the support substrate 140 may include at least one of sapphire (Al ₂ O ₃ ), GaN, SiC, ZnO, GaP, InP, Ga ₂ O ₃ , GaAs, and Si, but is not limited thereto. If the support substrate 140 is a conductive type, a separate electrode is not disposed on the support substrate 140, and the entire support substrate 140 may serve as an electrode. To this end, the support substrate 140 may use a metal having excellent electrical conductivity, and a metal having high thermal conductivity may be used since it must be able to sufficiently dissipate heat generated when the light emitting device is operated.

For example, the support substrate 140 may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or an alloy thereof. In addition, gold (Au), copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga ₂ O _3, etc.) may be optionally included.

In addition, like the first electrode 132 illustrated in FIGS. 3, 6, and 7, the first electrode 142 is made of a reflective material that reflects light emitted from the active layer 124 or is emitted from the active layer 124. It may be made of a light transmitting material that transmits the light.

11 is a sectional view of an ultraviolet light emitting device 100G according to still another embodiment having a flip bonding structure.

Since the ultraviolet light emitting device 100G illustrated in FIG. 11 has a flip chip bonding structure, the sub-mount 150, the protective layer 152, the first and second metal layers (or electrode pads) 154A and 154B, and the first And second bumps 156A and 156B. Except for this difference, since the ultraviolet light emitting device 100G illustrated in FIG. 11 is the same as the ultraviolet light emitting device 100A illustrated in FIG. 3, the same reference numerals are used for overlapping portions, and a detailed description thereof will be omitted. .

The sub-mount 150 may be formed of, for example, a semiconductor substrate such as AlN, BN, silicon carbide (SiC), GaN, GaAs, Si, or the like, but may be formed of a semiconductor material having excellent thermal conductivity. Also, an element for preventing electrostatic discharge (ESD) in the form of a zener diode may be included in the submount 150.

The first and second metal layers 154A and 154B are spaced apart from each other in the horizontal direction on the submount 150. The first bump 156A is disposed between the first metal layer 154A and the first electrode 132, and the second bump 156B is disposed between the second metal layer 154B and the second electrode 134.

The first electrode 132 is connected to the first metal layer 154A of the submount 150 through the first bump 156A, and the second electrode 134 is the submount 150 through the second bump 156B. ) Is connected to the second metal layer 154B.

Although not shown, a first upper bump metal layer (not shown) is further disposed between the first electrode 132 and the first bump 156A, and between the first metal layer 154A and the first bump 156A. A first lower bump metal layer (not shown) may be further disposed. Here, the first upper bump metal layer and the first lower bump metal layer serve to indicate a position where the first bump 156A is to be located. Similarly, a second upper bump metal layer (not shown) is further disposed between the second electrode 134 and the second bump 156B, and a second lower bump is disposed between the second metal layer 154B and the second bump 156B. Metal layers (not shown) may be further disposed. Here, the second upper bump metal layer and the second lower bump metal layer serve to indicate a position where the second bump 156B is to be located.

If the sub-mount 150 is made of a material having electrical conductivity such as Si, a protective layer between the first and second metal layers 154A and 154B and the sub-mount 150 as illustrated in FIG. 11. 152 may be further disposed. Here, the protective layer 152 may be made of an insulating material.

Hereinafter, a manufacturing method according to an embodiment of the ultraviolet light emitting device 100A illustrated in FIG. 3 will be described. However, the ultraviolet light emitting device 100A illustrated in FIG. 3 may be manufactured by other methods, without being limited thereto.

12A to 12F are cross-sectional views illustrating a method of manufacturing the ultraviolet light emitting device 100A illustrated in FIG. 3.

Referring to FIG. 12A, a buffer layer 112 is formed on the substrate 110.

The substrate 110 may be formed of a conductive or non-conductive material. If the substrate 110 is a silicon substrate, it is easy to have a large diameter and has excellent thermal conductivity. However, cracks in the light emitting structure 120 are caused by a difference in thermal expansion coefficient and lattice mismatch between the silicon and the nitride-based light emitting structure layer 120. Problems such as cracks may occur. To prevent this, the buffer layer 112 may be selectively formed on the substrate 110. The buffer layer 112 may be formed of, for example, at least one material selected from the group consisting of Al, In, N, and Ga, but is not limited thereto. In addition, the buffer layer 112 may be formed in the form of a single layer or a multilayer structure.

After the buffer layer 112 is formed on the substrate 110, the first conductive semiconductor layer 122, the active layer 124, the second conductive first semiconductor layer 126A, and the second conductive type are formed on the buffer layer 112. The reflective layer 126B and the second conductivity type second semiconductor layer 126C are sequentially formed.

The first conductive semiconductor layer 122 may be implemented as a III-V or II-VI compound semiconductor doped with a first conductive dopant, and the first conductive semiconductor layer 122 may be an n-type semiconductor layer. In this case, the first conductivity type dopant may be an n-type dopant and may include Si, Ge, Sn, Se, Te, but is not limited thereto.

The first conductivity-type semiconductor layer 122 has, for example, a composition formula of Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may be formed using a semiconductor material. The first conductive semiconductor layer 122 may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP. As described above, when the active layer 124 emits light in the ultraviolet wavelength band, the first conductivity type semiconductor layer 122 may be formed of AlGaN.

The active layer 124 may be formed of at least one of a single well structure, a multi well structure, a single quantum well structure, a multi quantum well structure, a quantum line structure, or a quantum dot structure. For example, the active layer 124 may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not limited.

The well layer / barrier layer of the active layer 124 may be formed of any one or more pair structures of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. However, the present invention is not limited thereto. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be further formed on or under the active layer 124. The conductive clad layer may be formed of a semiconductor having a band gap energy higher than the band gap energy of the barrier layer of the active layer 124. For example, the conductive cladding layer may be formed of GaN, AlGaN, InAlGaN, or a superlattice structure. In addition, the conductive clad layer may be doped with n-type or p-type.

The second conductive first and second semiconductor layers 126A and 126C may be formed using a compound semiconductor such as a group III-V group or a group II-VI group, and may be doped with a second conductive dopant. For example, by using a semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) a second conductivity type first and Second semiconductor layers 126A and 126C may be formed. When the second conductivity type first and second semiconductor layers 126A and 126C are p type semiconductor layers, the second conductivity type dopant may include Mg, Zn, Ca, Sr, Ba, etc. as a p type dopant. . If light in the ultraviolet wavelength band is emitted from the active layer 124, the second conductivity type first semiconductor layer 126A is formed of AlGaN, and the second conductivity type second semiconductor layer 126C is formed of GaN or InAlGaN. Can be.

In addition, the second conductivity type reflective layer 126B may be formed in a DBR structure or an ODR structure.

12B, the patterned photoresist layer 160 is formed on the second conductivity-type second semiconductor layer 126C, and the patterned photoresist layer 160 is used as an etching mask. The second semiconductor layer 126C, the second conductive reflective layer 126B, the second conductive first semiconductor layer 126A, the active layer 124, and the first conductive semiconductor layer 122 are mesa-etched.

After exposing the first conductive semiconductor layer 122 by mesa etching, the photoresist layer 160 is removed as shown in FIG. 12C.

Thereafter, as illustrated in FIG. 12D, a portion corresponding to the recessed portion GP is exposed to form the recessed and projected pattern, that is, the recessed portion and the recessed portion, and the portion corresponding to the recessed portion RP and the first conductive type exposed. A patterned photoresist layer 162 is formed to cover the semiconductor layer 122.

Then, as shown in FIG. 12E, the second conductive second semiconductor layer 126C and the second conductive reflective layer 126B are etched using the photoresist layer 162 as an etch mask to form the recess GP. Form the convex portion (RP).

Thereafter, as shown in FIG. 12F, the photoresist layer 162 is removed.

Subsequently, as illustrated in FIG. 3, the first electrode 132 is formed on the exposed first conductive semiconductor layer 122, and at the same time, the bottom surface GP-1 and the convex portion RP of the recess GP are formed. The recessed reflection layer 134-2 and the second-first electrode 134-1 are formed on the upper surface 126C-1.

For example, each of the first electrode 132, the second-first electrode 134-1, and the recessed reflective layer 134-2 may be formed of a metal, and may include Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and optional combinations thereof.

In particular, each of the second-first electrode 134-1 and the recess reflection layer 134-2 may be formed of a transparent conductive oxide film TCO. For example, the 2-1 electrode 134-1 may be formed of the above-described metal material, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (AZO), Indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au , And Ni / IrOx / Au / ITO, but are not limited to these materials.

In addition, the second-first electrode 134-1 may be formed as a single layer or multiple layers of a reflective electrode material having ohmic characteristics. If the 2-1 electrode 134-1 performs an ohmic role, an additional ohmic layer (not shown) may not be formed.

In the case of the ultraviolet light emitting devices 100A to 100G according to the above-described embodiment, the second conductive reflection layer 126B and the second conductive reflection layer 126B may have different reflectances depending on the direction of the incident light. In the conductive second semiconductor layer 126C, recesses and convex portions having an uneven pattern are formed, and the second-first electrode 134-1 and the recessed reflective layer 134-containing reflective or translucent materials on the recesses and the concave portions. 2) and the second-2 electrode 134-3 are disposed. In this case, since the reflective second-first electrode 134-1, the recessed part reflective layer 134-2, and the second-second electrode 134-3 can reflect light regardless of the direction of incident light. In addition, the light of the ultraviolet band emitted from the active layer 124 is uniformly reflected, thereby increasing the light extraction efficiency. In particular, the recessed reflective layer 134-2 reflects light toward the substrate 110 regardless of the direction of incident light so as to be emitted to the outside of the ultraviolet light emitting device.

13 is a cross-sectional view of a light emitting device package 200 according to the embodiment.

The light emitting device package 200 according to the embodiment may include the ultraviolet light emitting device 100G, the substrate 210, the first and second package bodies 220A and 220B, the insulator 230, the first and second wires 242, and the like. 244 and molding member 250.

The ultraviolet light emitting device 100G is the ultraviolet light emitting device illustrated in FIG. 11, and the detailed description thereof will be omitted using the same reference numerals. In addition to the ultraviolet light emitting device 100G illustrated in FIG. 11, any one of the ultraviolet light emitting devices 100A to 100F illustrated in FIGS. 2, 6, 7, 8, and 10 is illustrated in FIG. 13. Of course, the package 200 may be implemented.

The first and second package bodies 220A and 220B are disposed on the substrate 210. Here, the substrate 210 may be a printed circuit board (PCB), but is not limited thereto. In order to improve heat dissipation when the light emitting device 100G emits ultraviolet light, the first and second package bodies 220A and 220B may be made of aluminum, but are not limited thereto.

In FIG. 13, the submount 150 is illustrated as being disposed on the second package body 220B, but the embodiment is not limited thereto. That is, the submount 150 may be disposed on the first package body 220A instead of the second package body 220B. The first and second metal layers 154A and 154B of the ultraviolet light emitting device 100G are connected to the first and second package bodies 220A and 220B by the first and second wires 242 and 244, respectively. When the first and second package bodies 220A and 220B are made of an aluminum material having electrical conductivity, the insulator 230 may electrically separate the first package body 220A and the second package body 220B from each other. Play a role.

The first conductive semiconductor layer 122 may be formed of a substrate 210 through a first electrode 132, a first bump 156A, a first metal layer 154A, a first wire 242, and a first package body 220A. ) Can be electrically connected. In addition, the second conductive semiconductor layer 126 may be formed of a substrate through the second electrode 134, the second bump 156B, the second metal layer 154B, the second wire 244, and the second package body 220B. And may be electrically connected to 210.

The molding member 250 may be filled in the cavities formed by the first and second package bodies 220A and 220B to surround and protect the ultraviolet light emitting device 100G. In addition, the molding member 250 may include a phosphor to change the wavelength of light emitted from the ultraviolet light emitting device 100G.

A plurality of light emitting device packages according to another embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, or the like, which is an optical member, may be disposed on a path of light emitted from the light emitting device package. Such a light emitting device package, a substrate, and an optical member may be used in a sterilization device, or may function as a backlight unit or as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, an indicator device, a lamp, and a street lamp. Can be.

14 is a perspective view of an air sterilization apparatus 500 including a light emitting device package according to an embodiment.

Referring to FIG. 14, the air sterilizer 500 includes a light emitting module unit 510 mounted on one surface of a casing 501, and diffuse reflection reflection members 530a and 530b for diffusely reflecting light in the emitted ultraviolet wavelength band. And a power supply unit 520 for supplying available power required by the light emitting module unit 510.

First, the casing 501 may have a rectangular structure, and may be formed as an integrated structure, that is, a compact structure in which all of the light emitting module unit 510, the diffuse reflection reflecting members 530a and 530b, and the power supply unit 520 are incorporated. In addition, the casing 501 may have a material and a shape effective to release heat generated in the air sterilization apparatus 500 to the outside. For example, the material of the casing 501 may be made of any one material of Al, Cu, and alloys thereof. Therefore, the heat transfer efficiency of the casing 501 to the outside air can be improved, and the heat dissipation characteristics can be improved.

Alternatively, the casing 501 may have a unique outer surface shape. For example, the casing 501 may have an outer surface shape that protrudes, for example, into a corrugation or mesh or an uneven concave pattern. Therefore, the heat transfer efficiency of the casing 501 to the outside air can be further improved to improve heat dissipation characteristics.

Meanwhile, attachment plates 550 may be further disposed at both ends of the casing 501. Attachment plate 550 means the absence of a bracket function used to restrain and secure the casing 501 to the entire installation, as illustrated in FIG. 14. The attachment plate 550 may protrude in one direction from both ends of the casing 501. Here, one direction may be an inner direction of the casing 501 where deep ultraviolet rays are emitted and diffuse reflection occurs.

Thus, the attachment plate 550 provided on both ends from the casing 501 provides a fixing area with the entire installation device, so that the casing 501 can be fixed more effectively.

Attachment plate 550 may have any one of a screw fastening means, a rivet fastening means, an adhesive means and a detachment means, and the manner of these various coupling means will be apparent to those skilled in the art, the detailed description thereof will be omitted here. do.

On the other hand, the light emitting module unit 510 is disposed in a form that is mounted on one surface of the casing 501 described above. The light emitting module unit 510 emits ultraviolet light, especially deep ultraviolet light, to sterilize microorganisms in the air. To this end, the light emitting module unit 510 includes a substrate 512 and a plurality of light emitting device packages 200 mounted on the substrate 512. Here, the light emitting device package 200 may correspond to the light emitting device package 200 illustrated in FIG. 13, but is not limited thereto.

The substrate 512 is disposed in a single row along the inner surface of the casing 501 and may be a PCB including a circuit pattern (not shown). However, the substrate 512 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB, and the like, but is not limited thereto. Here, the substrate 512 may correspond to the substrate 210 illustrated in FIG. 13.

Next, the diffuse reflection reflecting members 530a and 530b mean a reflecting plate-shaped member formed to forcibly diffuse the deep ultraviolet light emitted from the above-described light emitting module unit 510. The front shape and the arrangement shape of the diffuse reflection member 530a, 530b may have various shapes. As the planar structure (eg curvature radius, etc.) of the diffuse reflection members 530a and 530b is changed little by little, the diffusely reflected deep ultraviolet rays are irradiated to overlap and the irradiation intensity is increased or the width of the area to be irradiated is expanded. Can be.

The power supply unit 520 serves to supply the available power required by the light emitting module unit 510 by receiving power. The power supply 520 may be disposed in the casing 501 described above. As illustrated in FIG. 14, the power supply unit 520 may be disposed on the inner wall side of the space between the diffuse reflection reflecting members 530a and 530b and the light emitting module unit 510. In order to introduce external power to the power supply unit 520 side, a power connection unit 540 may be further disposed to electrically connect each other.

As illustrated in FIG. 14, the power connector 540 may have a planar shape, but may have a socket or a cable slot to which an external power cable (not shown) may be electrically connected. And the power cable has a flexible extension structure, it can be made in the form of easy connection with an external power source.

15 illustrates a display device 800 including a light emitting device package according to an exemplary embodiment.

Referring to FIG. 15, the display device 800 includes a bottom cover 810, a reflector 820 disposed on the bottom cover 810, light emitting modules 830 and 835 that emit light, and a reflector 820. ) And a light guide plate 840 for guiding light emitted from the light emitting modules 830 and 835 to the front of the display device, and prism sheets 850 and 860 disposed in front of the light guide plate 840. An optical sheet, a display panel 870 disposed in front of the optical sheet, an image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870, and a display panel 870 It may include a color filter 880 disposed in front of the. Here, the bottom cover 810, the reflector 820, the light emitting modules 830 and 835, the light guide plate 840, and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on the substrate 830. Here, the substrate 830 may be a PCB or the like. The substrate 830 and the light emitting device package 835 may be the embodiment 200 illustrated in FIG. 13.

The bottom cover 810 may accommodate components in the display device 800. In addition, the reflective plate 820 may be provided as a separate component as shown in the drawing, or may be provided in the form of a high reflective material on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810. .

Here, the reflective plate 820 may use a material having a high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 840 may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like.

In addition, the first prism sheet 850 may be formed of a light transmitting and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In addition, the direction of the floor and the valley of one surface of the support film in the second prism sheet 860 may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 850. This is to evenly distribute the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 870.

Although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850. The diffusion sheet may be made of a polyester and polycarbonate-based material, and may maximize the light projection angle through refraction and scattering of light incident from the backlight unit. The diffusion sheet is formed on a support layer including a light diffusing agent, a first layer and a second layer which are formed on a light exit surface (first prism sheet direction) and a light incident surface (reflective sheet direction) and do not include a light diffusing agent. It may include.

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 form an optical sheet, which optical sheet is formed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

A liquid crystal display panel may be disposed on the display panel 870. In addition to the liquid crystal display panel, another type of display device that requires a light source may be provided.

16 illustrates a head lamp 900 including a light emitting device package according to an embodiment.

Referring to FIG. 16, the head lamp 900 includes a light emitting module 901, a reflector 902, a shade 903, and a lens 904.

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). In this case, the light emitting device package may be the embodiment 200 illustrated in FIG. 13.

The reflector 902 reflects light 911 emitted from the light emitting module 901 in a predetermined direction, for example, the front 912.

The shade 903 is disposed between the reflector 902 and the lens 904, and a member that blocks or reflects a portion of the light reflected by the reflector 902 toward the lens 904 to achieve a light distribution pattern desired by the designer. As one side, the one side portion 903-1 and the other side portion 903-2 of the shade 903 may have different heights.

Light irradiated from the light emitting module 901 may be reflected by the reflector 902 and the shade 903 and then transmitted through the lens 904 toward the front of the vehicle body. The lens 904 may deflect forward light reflected by the reflector 902.

17 illustrates a lighting device 1000 including a light emitting device or a light emitting device package according to an embodiment.

Referring to FIG. 17, the lighting apparatus 1000 may include a cover 1100, a light source module 1200, a heat sink 1400, a power supply 1600, an inner case 1700, and a socket 1800. have. In addition, the lighting apparatus 1000 according to the embodiment may further include any one or more of the member 1300 and the holder 1500.

The light source module 1200 may include the light emitting devices 100A to 100G illustrated in FIGS. 3 and 6 to 11, or the light emitting device package 200 shown in FIG. 13.

The cover 1100 may have a shape of a bulb or hemisphere, may be hollow, and may have a shape in which a portion thereof is opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be combined with the heat sink 1400. The cover 1100 may have a coupling portion coupled to the heat sink 1400.

The inner surface of the cover 1100 may be coated with a milky paint. The milky paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for the light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 is visible from the outside, but is not limited thereto and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat sink 1400, and heat generated from the light source module 1200 may be conducted to the heat sink 1400. The light source module 1200 may include a light source unit 1210, a connection plate 1230, and a connector 1250.

The member 1300 may be disposed on an upper surface of the heat sink 1400, and has a plurality of light source units 1210 and a guide groove 1310 into which the connector 1250 is inserted. The guide groove 1310 may correspond to or be aligned with the substrate and the connector 1250 of the light source 1210.

The surface of the member 1300 may be coated or coated with a light reflecting material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may reflect light reflected from the inner surface of the cover 1100 and returned toward the light source module 1200 in the direction of the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact may be made between the heat sink 1400 and the connection plate 1230. The member 1300 may be made of an insulating material to block an electrical short between the connection plate 1230 and the heat sink 1400. The radiator 1400 may receive heat from the light source module 1200 and heat from the power supply 1600 to radiate heat.

The holder 1500 blocks the accommodating groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 may be sealed. The holder 1500 may have a guide protrusion 1510, and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside to provide the light source module 1200. The power supply 1600 may be accommodated in the accommodating groove 1725 of the inner case 1700, and may be sealed in the inner case 1700 by the holder 1500. The power supply 1600 may include a protrusion 1610, a guide 1630, a base 1650, and an extension 1670.

The guide part 1630 may have a shape protruding to the outside from one side of the base 1650. The guide part 1630 may be inserted into the holder 1500. A plurality of parts may be disposed on one surface of the base 1650. For example, a plurality of components may include, for example, a DC converter for converting an AC power provided from an external power source into a DC power source, a driving chip for controlling driving of the light source module 1200, and an ESD (ElectroStatic) to protect the light source module 1200. discharge) protection elements and the like, but is not limited thereto.

The extension 1670 may have a shape protruding to the outside from the other side of the base 1650. The extension 1670 may be inserted into the connection 1750 of the inner case 1700, and may receive an electrical signal from the outside. For example, the extension 1670 may have the same width or smaller than the connection portion 1750 of the inner case 1700. Each end of the "+ wire" and the "-wire" may be electrically connected to the extension 1670, and the other end of the "+ wire" and the "-wire" may be electrically connected to the socket 1800. .

The inner case 1700 may include a molding unit together with the power supply unit 1600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply 1600 can be fixed inside the inner case 1700.

Although the above description has been made with reference to the embodiments, these are only examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains should not be exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

10, 110: substrate 20, 120: light emitting structure
100A to 100G: ultraviolet light emitting element 112: buffer layer
122: first conductive semiconductor layer 124: active layer
126A: Second conductivity type first semiconductor layer 126B: Second conductivity type reflection layer
126C: second conductive second semiconductor layer 132, 142: first electrode
134-1: 2-1st electrode 134-2: recessed portion reflective layer
134-3: 2-2 electrode 140: support substrate
150: submount 152: protective layer
154A, 154B: Metal layer 156A, 156B: Bump
200: light emitting device package 210: substrate
220A, 220B: Package Body 230: Insulator
242 and 244: wire 250: molding member
500: air sterilization device 501: casing
510: light emitting module parts 530a, 530b: diffuse reflection member
520: power supply 800: display device
810: bottom cover 820: reflector
830, 835, 901: Light emitting module 840: Light guide plate
850 and 860 prism sheet 870 display panel
872: image signal output circuit 880: color filter
900: head lamp 902: reflector
903: Shade 904: Lens
1000: lighting device 1100: cover
1200: light source module 1400: heat sink
1600: power supply unit 1700: inner case
1800: socket

Claims (12)

A first conductivity type semiconductor layer;
An active layer disposed on the first conductive semiconductor layer and emitting light in an ultraviolet wavelength band;
A second conductivity type semiconductor layer disposed on the active layer;
A first electrode electrically connected to the first conductive semiconductor layer;
And a second electrode electrically connected to the second conductive semiconductor layer.
The second conductivity type semiconductor layer may include a second conductivity type first semiconductor layer disposed on the active layer, a second conductivity type reflective layer disposed on the second conductivity type first semiconductor layer and including a plurality of first through holes; And a second conductive second semiconductor layer disposed on the second conductive reflection layer and including a plurality of second through holes.
The plurality of first through holes and the plurality of second through holes respectively overlap vertically,
A portion of an upper surface of the second conductive first semiconductor layer is positioned on a bottom surface of the first through hole.
The second electrode includes a recessed portion and an iron portion, and a connecting portion connecting the recessed portion and the iron portion,
The recessed part is disposed on a bottom surface of the first through hole, and contacts a part of an upper surface of the second conductive type first semiconductor layer.
The convex portion is in contact with an upper surface of the second conductivity-type second semiconductor layer,
The connection part is in contact with the side surfaces of the second conductivity type reflective layer and the second conductivity type second semiconductor layer respectively disposed on side surfaces of the first and second through holes,
The recess of the second electrode is in contact with the side surface of the second conductivity type reflective layer. delete delete delete The ultraviolet light emitting device of claim 1, wherein the second conductivity type reflective layer has an omni-directional reflector (ODR) or a distributed Bragg reflector (DBR) structure. The ultraviolet light emitting device of claim 1, wherein the recess has a planar shape in the shape of a polygon, a circle, or a bar. The method of claim 1, further comprising a substrate,
And the first conductive semiconductor layer, the active layer, the second conductive first semiconductor layer, the second conductive reflective layer, and the second conductive second semiconductor layer are sequentially disposed on the substrate. The method of claim 1, further comprising a support substrate,
And the second conductive second semiconductor layer, the second conductive reflective layer, the second conductive first semiconductor layer, the active layer, and the first conductive semiconductor layer are sequentially disposed on the support substrate. The method of claim 1, wherein the ultraviolet light emitting device
Submount;
First and second metal layers spaced apart from each other in a horizontal direction on the sub-mount;
A first bump disposed between the first metal layer and the first electrode; And
And a second bump disposed between the second metal layer and the recess. The ultraviolet light emitting device of claim 1, wherein the first electrode, the recessed portion, and the convex portion are each made of a material having at least one of reflective and translucent properties. The semiconductor device of claim 1, wherein each of the first conductive semiconductor layer and the second conductive semiconductor layer comprises AlGaN.
The second conductive second semiconductor layer is a UV light emitting device comprising GaN or InAlGaN. The ultraviolet light emitting device according to claim 1, wherein a width of the recess is greater than a width of the convex portion.

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