KR101992655B1 - Pattern forming method, resist pattern, method for manufacturing electronic device, and electronic device - Google Patents

Abstract

The pattern forming method includes a step (a) of applying a sensitizing actinic ray or radiation-sensitive resin composition onto a substrate to form a resist film, and a step (a) of applying a composition for forming an upper layer film on the resist film, A step b of forming an upper layer film, a step c of exposing the resist film on which the upper layer film is formed, and a step d of developing the exposed resist film by using a developer containing an organic solvent to form a pattern, The content of the compound capable of generating an acid upon irradiation with an actinic ray or radiation in the actinic radiation-sensitive or radiation-sensitive resin composition is preferably from 16.5 Mass% or more.

Description

Technical Field [0001] The present invention relates to a pattern forming method, a resist pattern, a method of manufacturing an electronic device, and an electronic device using the pattern forming method,

The present invention relates to a pattern forming method, a resist pattern formed by the pattern forming method, an electronic device manufacturing method including the pattern forming method, and an electronic device manufactured by the electronic device manufacturing method.

More particularly, the present invention relates to a method of forming a pattern, such as a semiconductor manufacturing process such as IC, a process for producing a circuit substrate such as a liquid crystal or a thermal head, a pattern forming process used for lithography process of other photofabrication, A resist pattern formed, a method of manufacturing an electronic device including the pattern forming method, and an electronic device manufactured by the method of manufacturing the electronic device.

Conventionally, in the process of manufacturing a semiconductor device such as an IC, fine processing is performed by lithography using various resist compositions. For example, Patent Document 1 discloses a method of manufacturing a semiconductor device comprising: (a) providing a semiconductor base including at least one layer to be patterned; (b) forming a photoresist layer on the at least one layer to be patterned; (c) coating a photoresist topcoat composition on the photoresist layer, wherein the topcoat composition comprises a basic solvent, a polymer and an organic solvent; (d) exposing the layer to actinic radiation; and e) developing the exposed film with an organic solvent developer. "

Patent Document 1: JP-A-2013-061647

The inventors of the present invention have studied the method described in Patent Document 1 and found that exposure latitude (EL) is comparatively good, but CDL (Critical Dimension Uniformity) and Line Edge Roughness (LER) ) Is insufficient in some cases.

SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and it is an object of the present invention to provide a method of forming a pattern having good CDU, LER and EL, a resist pattern formed by the pattern forming method, And an object of the present invention is to provide an electronic device manufactured by a manufacturing method of a device.

The inventors of the present invention have found that the above object is achieved by employing the following configuration. That is, the present invention provides the following [1] to [8].

[1] An actinic ray-sensitive or radiation-sensitive resin composition containing a resin whose polarity increases by the action of an acid and a compound which generates an acid by irradiation of an actinic ray or radiation is applied on a substrate, A step (b) of forming an upper layer film on the resist film by applying a composition for forming an upper layer film on the resist film, a step (c) of exposing the resist film on which the upper layer film is formed, And a step (d) of developing the resist film by using a developing solution containing an organic solvent to form a pattern, wherein the actinic ray or radiation-sensitive resin composition comprises an acid The content of the generated compound is preferably not more than 16.5% based on the total solid content of the sensitizing actinic ray-sensitive or radiation- Or more% by weight, the pattern forming method.

[2] The pattern forming method according to [1], wherein the composition for forming an upper layer contains at least one selected from the group consisting of the following (A1), (A2) and (A3).

(A1) a basic compound or a base generator

(A2) a compound containing at least one bond or group selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond

(A3) onium salt

[3] The method for forming a pattern according to the above [1] or [2], wherein the composition for forming an upper layer contains a resin having a glass transition temperature of 50 ° C or higher.

[4] The compound according to any one of [1] to [3], wherein the compound capable of generating an acid upon irradiation with an actinic ray or radiation is an acid generating compound by irradiation of an actinic ray or radiation represented by a general formula (3) The pattern forming method according to any one of < 1 >

[5] The method according to any one of [1] to [4], wherein the step b) is a step of forming an upper layer film on the resist film by applying the composition for forming an upper layer film on the resist film, The pattern forming method according to any one of < 1 >

[6] A resist pattern formed by the pattern forming method according to any one of [1] to [5].

[7] A method for manufacturing an electronic device, comprising the pattern forming method according to any one of [1] to [5].

[8] An electronic device manufactured by the method for manufacturing an electronic device according to [7] above.

According to the present invention, it is possible to provide a method of forming a pattern having good CDU, LER, and EL, a resist pattern formed by the pattern forming method, an electronic device manufacturing method including the pattern forming method, Thereby providing an electronic device.

Hereinafter, embodiments for carrying out the present invention will be described.

In the notation of the group (atomic group) in the present specification, the notation in which substitution and non-substitution are not described includes those having a substituent as well as those having a substituent. For example, the "alkyl group" includes not only an alkyl group having no substituent (an unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

The term " actinic ray "or" radiation " in this specification means, for example, a line spectrum of a mercury lamp, far ultraviolet ray represented by an excimer laser, extreme ultraviolet ray (EUV light), X ray or electron ray. In the present invention, light means an actinic ray or radiation. The term "exposure" in this specification means not only exposure by deep ultraviolet rays such as mercury lamps and excimer lasers, X-rays, EUV light, etc., but also drawing by particle beams such as electron beams and ion beams Is included in the exposure.

Hereinafter, first, a description will be given of the pattern forming method of the present invention, and thereafter, a sensitizing actinic ray or radiation-sensitive resin composition (hereinafter also referred to as "the resist composition of the present invention") used in the pattern forming method of the present invention, (Hereinafter also referred to as "top coat composition") will be described.

[Pattern formation method]

The pattern forming method of the present invention is a method for forming a pattern on a substrate, comprising the steps of: applying a radiation-sensitive or radiation-sensitive resin composition containing a resin whose polarity increases by action of an acid and a compound which generates an acid upon irradiation with an actinic ray or radiation, A step b of forming an upper layer film on the resist film by applying a composition for forming an upper layer film on the resist film, a step b of exposing the resist film on which the upper layer film is formed, c And a step (d) of developing the exposed resist film by using a developer containing an organic solvent to form a pattern, wherein the step (d) of the actinic ray or radiation in the actinic ray- or radiation- The content of the compound capable of generating an acid by irradiation is preferably in a range of from 0.1 to 10% by weight, Min or more, based on the 16.5% by weight, a pattern forming method.

Thus, both good CDU and LER and good EL can be realized.

≪ Process a &

In the step a, the resist composition of the present invention is applied on a substrate to form a resist film (active radiation ray-sensitive or radiation-sensitive film). The application method is not particularly limited, and conventionally known spin coating, spraying, roller coating, dipping, or the like can be used, and spin coating is preferable.

After the resist composition of the present invention is applied, the substrate may be heated (pre-baked) if necessary. This makes it possible to uniformly form a film from which an insoluble residual solvent has been removed. The temperature of the prebake is not particularly limited, but is preferably from 50 캜 to 160 캜, more preferably from 60 캜 to 140 캜.

The substrate on which the resist film is to be formed is not particularly limited and may be a substrate such as an inorganic substrate such as silicon, SiO ₂ , or SiN, an inorganic substrate coated with SOG or the like, a semiconductor manufacturing process such as IC, , And further, substrates commonly used in lithography processes of other photofabrication can be used.

An antireflection film may be formed on the substrate before forming the resist film.

As the antireflection film, an inorganic film type such as titanium, titanium dioxide, titanium nitride, chromium oxide, carbon, amorphous silicon and the like and an organic film type comprising a light absorber and a polymer material can be used. As the organic antireflection film, there are commercially available ARC series such as DUV 30 series, DUV-40 series manufactured by Brewer Science, AR-2, AR-3, AR-5 manufactured by Shipley and ARC29A manufactured by Nissan Kagaku Co., May be formed using a composition for forming an organic anti-reflective coating.

≪ Process b >

In Step b, a composition for forming an upper layer film (top coat composition) is applied onto the resist film formed in Step a, and then, if necessary, prebaked (PB) (Hereinafter also referred to as "top coat") is formed.

When a large amount of a compound (photo-acid generator) that generates an acid by irradiation of actinic rays or radiation is added to the resist film, CDU and LER are improved. On the other hand, when the photoacid generator in the resist film becomes excessive, on the other hand, the glass transition temperature of the resist film lowers and the generated acid tends to diffuse, and the EL may fall behind.

At this time, formation of the top coat on the resist film increases the glass transition temperature of the whole film and suppresses the acid diffusing property, so that a good EL is obtained.

The prebake temperature (hereinafter also referred to as "PB temperature") in step b is preferably 100 deg. C or more, more preferably 105 deg. C or more, and more preferably 110 deg. C or more More preferably 120 DEG C or higher, and most preferably 120 DEG C or higher.

The upper limit of the PB temperature is not particularly limited, but may be 200 占 폚 or lower, for example, 170 占 폚 or lower, more preferably 160 占 폚 or lower, and even more preferably 150 占 폚 or lower.

When the exposure in step c described later is performed by immersion exposure, the topcoat is disposed between the resist film and the immersion liquid, and functions as a layer which does not directly contact the resist film with the immersion liquid. In this case, preferable properties of the topcoat (topcoat composition) are coating applicability to a resist film, transparency to radiation, particularly 193 nm, and poor solubility in an immersion liquid (preferably water). It is also preferable that the topcoat is not mixed with the resist film and is uniformly applied to the surface of the resist film.

Further, in order to apply the topcoat composition uniformly to the surface of the resist film without dissolving the resist film, the topcoat composition preferably contains a solvent that does not dissolve the resist film. As the solvent which does not dissolve the resist film, it is more preferable to use a solvent of a component different from that of the organic developing solution to be described later. The method of applying the topcoat composition is not particularly limited, and conventionally known spin coating, spraying, roller coating, dipping and the like can be used.

From the viewpoint of transparency to 193 nm, the topcoat composition preferably contains a resin substantially free from aromatics, and specifically, for example, a resin having at least any one of a fluorine atom and a silicon atom And a resin having a repeating unit having a CH ₃ partial structure in the side chain portion. However, it is not particularly limited as long as it is soluble in a solvent that does not dissolve the resist film.

The film thickness of the topcoat is not particularly limited, but is usually from 5 nm to 300 nm, preferably from 10 nm to 300 nm, more preferably from 20 nm to 200 nm, and further preferably from 30 nm to 100 nm in terms of transparency to an exposure light source .

After forming the topcoat, the substrate is heated as needed.

The refractive index of the top coat is preferably close to the refractive index of the resist film from the viewpoint of resolution.

The topcoat is preferably insoluble in the immersion liquid, more preferably insoluble in water.

The receding contact angle of the top coat is preferably from 50 to 100 degrees, more preferably from 80 to 100 degrees, from the viewpoint of liquid droplet followability, the receding contact angle (23 DEG C) of the immersion liquid relative to the topcoat.

In the liquid immersion lithography, the immersion liquid needs to move on the wafer in order to follow the motion in which the exposure head scans the wafer on the wafer at a high speed to form an exposure pattern. Therefore, The contact angle of the resist film is important, and in order to obtain better resist performance, it is preferable to have a receding contact angle within the above range.

When the top coat is peeled off, an organic developer to be described later may be used, or a separate release agent may be used. As the releasing agent, a solvent having a small penetration into the resist film is preferable. It is preferable that the topcoat can be peeled off with an organic developer in that peeling of the topcoat can be performed simultaneously with development of the resist film. The organic developing solution used for peeling is not particularly limited as long as it can dissolve and remove the low-exposed portion of the resist film. Examples of the organic developing solution include polar solvents such as a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent and an ether solvent, A developing solution containing a ketone solvent, an ester solvent, an alcohol solvent and an ether solvent is preferable, and a developing solution containing an ester solvent is more preferable, Is more preferable.

From the viewpoint of peeling off with an organic developing solution, the dissolution rate of the topcoat to the organic developing solution is preferably 1 to 300 nm / sec, more preferably 10 to 100 nm / sec.

Here, the dissolution rate of the topcoat in the organic developing solution is the rate of film thickness reduction when the topcoat is exposed to the developing solution after film formation, and in the present invention, it is set at the speed when the film is immersed in a butyl acetate solution at 23 캜 .

When the dissolution rate of the topcoat to the organic developing solution is 1 nm / sec or more, preferably 10 nm / sec or more, the occurrence of development defects after development of the resist film is reduced. The effect of reducing the unevenness of exposure during liquid immersion lithography may improve the line edge roughness of the pattern after development of the resist film, by setting the thickness to 300 nm / sec or less, preferably 100 nm / sec.

The topcoat may be removed by using other known developer, for example, an aqueous alkali solution. Specific examples of the aqueous alkaline solution which can be used include an aqueous solution of tetramethylammonium hydroxide.

≪ Process c &

The exposure in step c may be performed by a generally known method. For example, an actinic ray or radiation is irradiated to a resist film on which a top coat is formed through a predetermined mask. At this time, preferably, the actinic ray or radiation is irradiated through an immersion liquid, but the present invention is not limited thereto. The exposure dose can be appropriately set, but is usually 1 to 100 mJ / cm ² .

The wavelength of the light source used in the exposure apparatus of the present invention is not particularly limited, but it is preferable to use light having a wavelength of 250 nm or less. Examples thereof include KrF excimer laser light (248 nm), ArF excimer laser light (193 nm) , F ₂ excimer laser light (157 nm), EUV light (13.5 nm), and electron beam. Of these, ArF excimer laser light (193 nm) is preferably used.

In the case of liquid immersion lithography, the surface of the film may be cleaned with an aqueous liquid before the exposure, and / or after the exposure, and before the heating described later.

The liquid immersion liquid is preferably a liquid as transparent as possible with respect to the exposure wavelength, and with a temperature coefficient of refractive index as small as possible so that the distortion of the optical image projected onto the film is minimized, but in particular, the exposure light source is ArF excimer laser light (wavelength; 193 nm), it is preferable to use water in view of ease of acquisition and ease of handling in addition to the above-mentioned point of view.

In the case of using water, an additive (liquid) for increasing the surface activity may be added in a small proportion as well as reducing the surface tension of water. It is preferable that the additive does not dissolve the resist film on the substrate and neglects the influence of the lower surface of the lens element on the optical coat. As the water to be used, distilled water is preferable. It is also possible to use pure water that has been filtered through an ion exchange filter or the like. This makes it possible to suppress distortion of the optical image projected onto the resist film due to incorporation of impurities.

It is also possible to use a medium having a refractive index of 1.5 or more in order to further improve the refractive index. The medium may be an aqueous solution or an organic solvent.

The pattern forming method of the present invention may have the step c (exposure step) a plurality of times. In this case, plural exposures may use the same light source or different light sources, but it is preferable to use ArF excimer laser light (wavelength: 193 nm) for the first exposure.

After the exposure, preferably, heating (also referred to as "bake ", or" PEB ") is performed and developing (preferably further rinsing) is performed. As a result, a good pattern can be obtained. The temperature of the PEB is not particularly limited as long as a good resist pattern can be obtained, and is usually 40 ° C to 160 ° C. The PEB may be once or plural times.

≪ Process d &

In step d, a negative resist pattern is formed by developing using a developer containing an organic solvent. Step d is preferably a step of simultaneously removing the soluble portion of the resist film.

Examples of a developer containing an organic solvent (hereinafter also referred to as "organic developer") used in Step d include polar solvents such as ketone solvents, ester solvents, alcohol solvents, amide solvents, ether solvents, And a developer containing a solvent.

Examples of the ketone-based solvent include aliphatic ketones such as 1-octanone, 2-octanone, 1-nonanone, 2-nonanone, acetone, 2-heptanone, Diisobutyl ketone, cyclohexanone, methylcyclohexanone, phenylacetone, methylethylketone, methylisobutylketone, acetylacetone, acetone diacetone, ionone, diacetone diol alcohol, acetylcarbinol, acetophenone, methylnap T-butyl ketone, isophorone, propylene carbonate, and the like.

Examples of the ester type solvent include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate (n-butyl acetate), pentyl acetate, hexyl acetate, isoamyl acetate, butyl propionate (n-butyl propionate) Propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3 3-methoxybutylacetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, 2-hydroxy-3-methoxybutyl acetate, Isobutyrate methyl, isobutyrate isobutyl, and propionate butyl.

Examples of the alcohol solvent include alcohols such as methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol, tert-butyl alcohol, isobutyl alcohol, Alcohols such as alcohol, n-octyl alcohol and n-decanol; Glycol solvents such as ethylene glycol, propylene glycol, diethylene glycol, and triethylene glycol; Ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxymethyl butanol. solvent; And the like.

As the ether-based solvent, there may be mentioned, besides the glycol ether type solvent, dioxane, tetrahydrofuran and the like.

Examples of the amide solvent include N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, hexamethylphosphoric triamide, 2-imidazolidinone and the like can be used.

Examples of the hydrocarbon hydrocarbon solvents include aromatic hydrocarbon solvents such as toluene and xylene; Aliphatic hydrocarbon solvents such as pentane, hexane, octane and decane; And the like.

A plurality of the above-mentioned solvents may be mixed, or they may be mixed with a solvent or water other than the above. However, in order to sufficiently exhibit the effect of the present invention, the water content of the developer as a whole is preferably less than 10 mass%, more preferably substantially water-free.

That is, the content of the organic solvent in the organic developer is preferably 90% by mass or more and 100% by mass or less, and more preferably 95% by mass or more and 100% by mass or less based on the total amount of the developer.

Of these, the organic developing solution is preferably a developing solution containing at least one organic solvent selected from the group consisting of a ketone solvent, an ester solvent, an alcohol solvent, an amide solvent and an ether solvent, Or a developer containing an ester-based solvent is more preferable, and a developer containing butyl acetate, butyl propionate, or 2-heptanone is more preferable.

The vapor pressure of the organic developer is preferably 5 kPa or less, more preferably 3 kPa or less, and more preferably 2 kPa or less at 20 캜. By setting the vapor pressure of the organic developing solution to 5 kPa or less, evaporation of the developer on the substrate or in the developing cup is suppressed, the temperature uniformity within the wafer surface is improved, and as a result, the dimensional uniformity within the wafer surface is improved.

As a specific example having a vapor pressure of 5 kPa or less (2 kPa or less), there may be mentioned the solvent described in paragraph <0165> of JP-A No. 2014-71304.

To the organic developer, an appropriate amount of a surfactant may be added, if necessary.

The surfactant is not particularly limited and, for example, ionic or nonionic fluorine-based and / or silicon-based surfactants can be used. As such fluorine- and / or silicon-based surfactants, for example, JP-A-62-36663, JP-A-61-226746, JP-A-61-226745, JP- Japanese Unexamined Patent Application Publication No. Hei 8-62834, Japanese Unexamined Patent Application, First Publication No. Hei 9-54432, Japanese Unexamined Patent Application, First Publication No. Hei 9- And surfactants described in U.S. Patent Nos. 5,605,792, 5,605,720, 5,560,892, 5,296,330, 5,453,143, 5,576,143, 5,295,451, and 5,824,451, It is an ionic surfactant. The nonionic surfactant is not particularly limited, but a fluorinated surfactant or a silicone surfactant is more preferably used.

The amount of the surfactant to be used is generally 0.001 to 5 mass%, preferably 0.005 to 2 mass%, more preferably 0.01 to 0.5 mass%, based on the total amount of the developer.

The organic developer may contain a basic compound. Specific examples and preferable examples of the basic compound that can be included in the organic developing solution used in the present invention are the same as those described later as basic compounds that can contain the actinic ray-sensitive or radiation-sensitive resin composition.

Examples of the developing method include a method in which the substrate is immersed in a tank filled with the developing solution for a predetermined time (dip method), a method in which the developing solution is raised by surface tension on the surface of the substrate, ), A method of spraying a developer on the surface of a substrate (spray method), a method of continuously discharging a developer while scanning a developer discharge nozzle at a constant speed on a substrate rotating at a constant speed (dynamic dispensing method) and the like.

Furthermore, after the step of developing using a developer containing an organic solvent, the step of stopping (stopping) the development may be carried out while replacing with another solvent.

After the step of developing using a developing solution containing an organic solvent, the step of cleaning may be performed using a rinsing liquid.

As the rinse solution, there is no particular limitation as long as the resist pattern is not dissolved, and a solution containing a general organic solvent can be used. Examples of the rinsing liquid include organic solvents selected from the group consisting of hydrocarbon solvents, ketone solvents, ester solvents, alcohol solvents, amide solvents and ether solvents described above as the organic solvent contained in the organic developing solution It is preferable to use a rinsing liquid containing at least one kind of organic solvent. More preferably, the step of cleaning is carried out using a rinsing liquid containing at least one organic solvent selected from the group consisting of a hydrocarbon hydrocarbon solvent, a ketone solvent, an ester solvent, an alcohol solvent, and an amide solvent I do. More preferably, a step of cleaning is carried out using a rinsing liquid containing a hydrocarbon hydrocarbon solvent, an alcoholic solvent or an ester solvent. Particularly preferably, a step of washing with a rinsing liquid containing a monohydric alcohol is carried out. Hydrocarbon hydrocarbon solvents such as decane and undecane are also preferable.

Examples of the monohydric alcohol used in the rinsing step include linear, branched, and cyclic monohydric alcohols. Specific examples thereof include 1-butanol, 2-butanol, 3-methyl- Butanol, 1-butanol, 3-methyl-2-butanol, tert-butyl alcohol, Methyl-2-hexanol, 1-heptanol, 2-heptanol, 3-heptanol, 4-methyl-2-hexanol, -Heptanol, 5-methyl-2-heptanol, 1-octanol, 2-octanol, 3-octanol, 4-octanol, , 6-methyl-2-octanol, 2-nonanol, 4-methyl-2-nonanol, , 2-decanol, and the like. Of these, 1-hexanol, 2-hexanol, 1-pentanol, 3-methyl-1-butanol and 4-methyl-2-heptanol are preferable.

Examples of the hydrocarbon hydrocarbon solvent used in the rinsing step include aromatic hydrocarbon solvents such as toluene and xylene; Aliphatic hydrocarbon solvents such as pentane, hexane, octane, decane (n-decane) and undecane; And the like.

When an ester solvent is used as the rinsing liquid, a glycol ether solvent may be used in addition to the ester solvent (one or more). As a specific example of this case, a glycol ether solvent (preferably propylene glycol monomethyl ether (PGME)) is used as a subcomponent with an ester type solvent (preferably, butyl acetate) as a main component have. Thus, residue defects are suppressed.

A plurality of these components may be mixed, or they may be mixed with other organic solvents.

The water content in the rinsing liquid is preferably 10 mass% or less, more preferably 5 mass% or less, particularly preferably 3 mass% or less. By setting the moisture content to 10 mass% or less, good developing characteristics can be obtained.

The vapor pressure of the rinsing liquid is preferably 0.05 to 5 kPa at 20 캜, more preferably 0.1 to 5 kPa, and even more preferably 0.12 to 3 kPa. By setting the vapor pressure of the rinsing liquid to 0.05 to 5 kPa, temperature uniformity in the wafer surface is improved, swelling due to infiltration of the rinsing liquid is suppressed, and dimensional uniformity within the wafer surface is improved.

An appropriate amount of surfactant may be added to the rinse solution.

In the rinsing process, the wafer having undergone development using a developer containing an organic solvent is subjected to a cleaning treatment using a rinsing liquid containing the organic solvent. There is no particular limitation on the method of the cleaning treatment, but a method of continuously discharging the rinsing liquid onto the substrate rotating at a constant speed (spin coating method), a method of immersing the substrate in the tank filled with the rinsing liquid for a predetermined time ), A method of spraying a rinsing liquid onto the surface of the substrate (spraying method), etc. Among them, a cleaning treatment is carried out by a rotation coating method, and after cleaning, the substrate is rotated at a rotation speed of 2000 rpm to 4000 rpm, It is preferable to remove it from the substrate. It is also preferable to include a post-baking process after the rinsing process. The developer and rinsing liquid remaining between the patterns and inside the pattern are removed by baking. The heating step after the rinsing step is usually carried out at 40 to 160 ° C, preferably 70 to 95 ° C, for 10 seconds to 3 minutes, preferably 30 seconds to 90 seconds.

Further, in the pattern forming method of the present invention, after development using an organic developing solution, development may be performed using an alkaline developing solution. Although the portion with weaker exposure intensity is removed by development using an organic solvent, a portion having stronger exposure intensity is also removed by further developing using an alkali developing solution. In this way, the pattern can be formed without dissolving only the intermediate light intensity region by the multiple development process in which the development is performed plural times, so that a finer pattern than usual can be formed (see Japanese Patent Laid-Open Publication No. 2008-292975 The same mechanism as in FIG.

Examples of the alkali developing solution include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia; Primary amines such as ethylamine, n-propylamine and the like; Secondary amines such as diethylamine and di-n-butylamine; Tertiary amines such as triethylamine and methyldiethylamine; Alcohol amines such as dimethylethanolamine and triethanolamine; Quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; Cyclic amines such as pyrrole and piperidine; Or the like can be used. Among them, it is preferable to use an aqueous solution of tetraethylammonium hydroxide.

In addition, alcohols and surfactants may be added to the alkali developing solution in an appropriate amount.

The alkali concentration of the alkali developing solution is usually 0.01 to 20% by mass.

The pH of the alkali developing solution is usually from 10.0 to 15.0.

The time for developing with an alkali developing solution is usually 10 to 300 seconds.

The alkali concentration (and pH) of the alkali developing solution and the developing time can be appropriately adjusted according to the pattern to be formed.

After development using an alkali developing solution, it may be cleaned using a rinsing liquid. As the rinsing liquid, pure water may be used and an appropriate amount of a surfactant may be used.

After the developing treatment or the rinsing treatment, the developer or rinsing liquid adhering to the pattern can be removed by supercritical fluid.

Further, after the rinsing treatment or the treatment with the supercritical fluid, a heat treatment may be performed to remove moisture remaining in the pattern.

Various materials (for example, the resist composition, resist solvent, developer, rinse solution, antireflection film forming composition, topcoat composition, etc.) used in the pattern forming method of the present invention include impurities such as metals . The content of the impurities contained in these materials is preferably 1 ppm or less, more preferably 100 ppt or less, more preferably 10 ppt or less, and particularly preferably 10 to 100 ppt or less (particularly preferably less than the detection limit of the measuring apparatus).

Examples of the method for removing impurities such as metals from the various materials include filtration using a filter. The filter hole diameter is preferably 10 nm or less in pore size, more preferably 5 nm or less, and further preferably 3 nm or less. As the material of the filter, a filter made of polytetrafluoroethylene, polyethylene or nylon is preferable. The filter may be previously washed with an organic solvent. In the filter filtering step, a plurality of types of filters may be connected in series or in parallel. When a plurality of types of filters are used, filters having different hole diameters and / or different materials may be used in combination. In addition, the various materials may be filtered a plurality of times, and the step of filtering a plurality of times may be a circulating filtration step.

As a method for reducing impurities such as metals contained in the above various materials, it is possible to select a raw material having a small metal content as a raw material constituting various materials, filter the raw materials constituting various materials, For example, lining with Teflon (registered trademark), and distillation is carried out under conditions in which contamination is suppressed as much as possible. Preferable conditions for filter filtration performed on raw materials constituting various materials are the same as those described above.

In addition to filter filtration, impurities may be removed by the adsorbent, or a combination of filter filtration and adsorbent may be used. As the adsorbent, known adsorbents can be used. For example, inorganic adsorbents such as silica gel and zeolite, and organic adsorbents such as activated carbon can be used.

Further, a mold for imprinting may be produced using the resist composition of the present invention. For details thereof, see, for example, Japanese Patent Publication No. 4109085 and Japanese Patent Application Laid-Open No. 2008-162101.

The pattern forming method of the present invention is also applicable to the formation of a guide pattern in DSA (Directed Self-Assembly) (see, for example, ACS Nano Vol. 4 No. 8 Page 4815-4823).

The resist pattern formed by the above method can be used as a core (core) of a spacer process disclosed in, for example, Japanese Unexamined Patent Application Publication No. 3-270227 and Japanese Unexamined Patent Publication No. 2013-164509.

A method of improving the surface roughness of the pattern may be applied to the pattern formed by the pattern forming method of the present invention. As a method for improving the surface roughness of the pattern, for example, there can be mentioned a method of treating a resist pattern by a plasma of a gas containing hydrogen disclosed in WO2014 / 002808A1. In addition, JP-A-2004-235468, US2010 / 0020297A, JP-A-2009-19969, Proc. of SPIE Vol. 8328 83280N-1 "EUV Resist Curing Technique for LWR Reduction and Etch Selectivity Enhancement ".

[Sensitive actinic ray-sensitive or radiation-sensitive resin composition]

Next, the actinic ray-sensitive or radiation-sensitive resin composition (resist composition of the present invention) used in the pattern forming method of the present invention will be described.

(A) Resin

The resist composition of the present invention contains a resin whose polarity increases by the action of an acid (a resin whose polarity increases due to the action of an acid and whose solubility in a developer containing an organic solvent decreases).

(Hereinafter also referred to as "resin (A)") in which the polarity increases due to the action of an acid and decreases in the solubility in a developer containing an organic solvent (hereinafter also referred to as & (Hereinafter also referred to as "acid-decomposable resin" or "acid-decomposable resin (A)") having a group capable of decomposing by the action of an acid to generate an alkali-soluble group .

The resin (A) is more preferably a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure (hereinafter also referred to as "alicyclic hydrocarbon-based acid-decomposable resin"). It is considered that the resin having a monocyclic or polycyclic alicyclic hydrocarbon structure has high hydrophobicity and improves developability in the case of developing a region in which the light irradiation intensity of the resist film is weak by the organic system developer.

The resist composition of the present invention containing the resin (A) can be suitably used in the case of irradiating ArF excimer laser light.

Examples of the alkali-soluble group contained in the resin (A) include phenolic hydroxyl groups, carboxylic acid groups, fluorinated alcohol groups, sulfonic acid groups, sulfonamido groups, sulfonylimide groups, (alkylsulfonyl) Alkylsulfonyl) imide groups, bis (alkylcarbonyl) methylene groups, bis (alkylcarbonyl) imide groups, bis (alkylsulfonyl) methylene groups, bis (alkylsulfonyl) Alkylcarbonyl) methylene group, a group having a tris (alkylsulfonyl) methylene group, and the like.

Preferable examples of the alkali-soluble group include a carboxylic acid group, a fluorinated alcohol group (preferably, hexafluoro isopropanol), and a sulfonic acid group.

As the group capable of decomposing into an acid (acid decomposable group), a group substituted with a group capable of eliminating the hydrogen atom of the alkali-soluble group with an acid.

The repeating unit having an acid-decomposable group is also referred to as an acid-decomposable repeating unit.

Examples of group (acid group desorption) to elimination with an acid, for example, _{-C (R 36) (R 37} ) (R 38), -C (R 36) (R 37) (OR 39), -C (R 01 ) (R ₀₂ ) (OR ₃₉ ).

In the formula, R ₃₆ to R ₃₉ each independently represent an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.

R ₀₁ to R ₀₂ each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.

The acid decomposable group is preferably a cumyl ester group, an enol ester group, an acetal ester group, or a tertiary alkyl ester group. More preferably, it is a tertiary alkyl ester group.

The content of the repeating unit having an acid-decomposable group in the resin (A) is preferably 10 mol% or more, more preferably 20 mol% or more, and still more preferably 30 mol% or more, of the total repeating units. The content of the repeating unit having an acid-decomposable group in the resin (A) is preferably 80% by mole or less, more preferably 70% by mole or less, still more preferably 60% by mole or less, Mol% or less is particularly preferable.

The resin (A) is preferably a resin containing at least one member selected from the group consisting of a repeating unit having a partial structure represented by the following general formula (pI) to a general formula (pV) and a repeating unit represented by the following general formula (II-AB) Resin.

[Chemical Formula 1]

Among the general formulas (pI) to (pV)

R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group and Z represents an atomic group necessary for forming a cycloalkyl group together with a carbon atom.

R ₁₂ to R ₁₆ each independently represent a linear or branched alkyl group or cycloalkyl group having 1 to 4 carbon atoms. Provided that at least one of R ₁₂ to R ₁₄ , or any one of R ₁₅ and R ₁₆ represents a cycloalkyl group.

Each of R ₁₇ to R ₂₁ independently represents a hydrogen atom, a straight chain or branched alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group. Provided that at least one of R ₁₇ to R ₂₁ represents a cycloalkyl group. Any one of R ₁₉ and R ₂₁ represents a linear or branched alkyl group or cycloalkyl group having 1 to 4 carbon atoms.

R ₂₂ to R ₂₅ each independently represent a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cycloalkyl group. Provided that at least one of R ₂₂ to R ₂₅ represents a cycloalkyl group. R ₂₃ and R ₂₄ may be bonded to each other to form a ring.

(2)

Among the general formula (II-AB)

R ₁₁ 'and R ₁₂ ' each independently represent a hydrogen atom, a cyano group, a halogen atom or an alkyl group.

Z 'represents an atomic group containing two bonded carbon atoms (C-C) and forming an alicyclic structure.

It is more preferable that the formula (II-AB) is represented by the following formula (II-AB1) or (II-AB2).

(3)

Of the formulas (II-AB1) and (II-AB2)

R ₁₃ 'to R ₁₆ ' each independently represent a hydrogen atom, a halogen atom, a cyano group, -COOH, -COOR ₅ , a group decomposed by the action of an acid, -C (═O) -R ₁₇ ', an alkyl group or a cycloalkyl group. At least two of R ₁₃ 'to R ₁₆ ' may combine to form a ring.

Here, R ₅ represents an alkyl group, a cycloalkyl group, or a group having a lactone structure.

X represents an oxygen atom, a sulfur atom, -NH-, -NHSO ₂ - or -NHSO ₂ NH-.

A 'represents a single bond or a divalent linking group.

R ₁₇ 'represents a group having -COOH, -COOR ₅ , -CN, a hydroxyl group, an alkoxy group, -CO-NH-R ₆ , -CO-NH-SO ₂ -R ₆ or a lactone structure.

R ₆ represents an alkyl group or a cycloalkyl group.

n represents 0 or 1;

In the formulas (pI) to (pV), the alkyl group in R ₁₂ to R ₂₅ represents a straight-chain or branched alkyl group having 1 to 4 carbon atoms.

The cycloalkyl group represented by R ₁₁ to R ₂₅ or the cycloalkyl group formed by Z and the carbon atom may be monocyclic or polycyclic. Specifically, a group having a monocycle having 5 or more carbon atoms, a bicyclo, a tricyclo, a tetracyclo structure, or the like can be given. The number of carbon atoms thereof is preferably from 6 to 30, particularly preferably from 7 to 25 carbon atoms. These cycloalkyl groups may have substituents.

Preferred examples of the cycloalkyl group include an adamantyl group, a noradamantyl group, a decalin residue, a tricyclododecanyl group, a tetracyclododecanyl group, a norbornyl group, a sidolyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, A decanyl group, and a cyclododecanyl group. More preferred examples thereof include an adamantyl group, a norbornyl group, a cyclohexyl group, a cyclopentyl group, a tetracyclododecanyl group and a tricyclodecanyl group.

Examples of the substituent of the alkyl group and the cycloalkyl group include an alkyl group (having 1 to 4 carbon atoms), a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, and an alkoxycarbonyl group (having 2 to 6 carbon atoms). Examples of the substituent which the above alkyl group, alkoxy group, alkoxycarbonyl group and the like may further have include a hydroxyl group, a halogen atom and an alkoxy group.

The structure represented by the general formulas (pI) to (pV) in the above resin can be used for protecting an alkali-soluble group. Examples of the alkali-soluble group include various groups known in the art.

Specifically, a structure in which a hydrogen atom of a carboxylic acid group, a sulfonic acid group, a phenol group or a thiol group is substituted with a structure represented by any one of formulas (pI) to (pV), and the like, and preferably a structure in which a hydrogen atom of a carboxylic acid group, (PI) to (pV).

As the repeating unit having an alkali-soluble group protected by the structure represented by the general formulas (pI) to (pV), a repeating unit represented by the following general formula (pA) is preferable.

[Chemical Formula 4]

Here, R represents a hydrogen atom, a halogen atom, or a linear or branched alkyl group having 1 to 4 carbon atoms. The plurality of Rs may be the same or different.

A is a single bond or a combination of two or more groups selected from the group consisting of a single bond, an alkylene group, an ether group, a thioether group, a carbonyl group, an ester group, an amide group, a sulfonamide group, . Preferably a single bond.

Rp ₁ represents any one of the above-mentioned formulas (pI) to (pV).

The repeating unit represented by the general formula (pA) is particularly preferably a repeating unit derived from 2-alkyl-2-adamantyl (meth) acrylate, dialkyl (1-adamantyl) methyl (meth) to be.

Specific examples of the repeating unit represented by formula (pA) are shown below, but the present invention is not limited thereto.

[Chemical Formula 5]

[Chemical Formula 6]

Examples of the halogen atom in the general formulas (II-AB), R ₁₁ 'and R ₁₂ ' include a chlorine atom, a bromine atom, a fluorine atom, and an iodine atom.

Examples of the alkyl group for R ₁₁ 'and R ₁₂ ' include a linear or branched alkyl group having 1 to 10 carbon atoms.

The atomic group for forming the alicyclic structure of Z 'is an atomic group which forms a repeating unit of an alicyclic hydrocarbon which may have a substituent on a resin, and among them, repeating of a bridged alicyclic hydrocarbon An atomic group for forming a bridged alicyclic structure forming a unit is preferable.

Examples of the alicyclic hydrocarbon skeleton to be formed include the same alicyclic hydrocarbon groups as R ₁₂ to R _{25 in} the formulas (pI) to (pV).

The skeleton of the alicyclic hydrocarbon may have a substituent. Examples of such a substituent include R ₁₃ 'to R ₁₆ ' in the general formula (II-AB1) or (II-AB2).

In the resin (A), the group decomposed by the action of an acid is, for example, a repeating unit having a partial structure represented by the general formula (pI) to the general formula (pV), a repeating unit represented by the general formula (II-AB) Unit, and a repeating unit of the following copolymerization component. The group decomposed by the action of an acid is preferably contained in a repeating unit having a partial structure represented by formulas (pI) to (pV).

The various substituents of R ₁₃ 'to R ₁₆ ' in the general formula (II-AB1) or the general formula (II-AB2) Or a substituent of the atomic group Z for forming a bridged alicyclic structure.

The content of the repeating unit having a partial structure represented by any of formulas (pI) to (pV) in the resin (A) is preferably 20 to 70 mol%, more preferably 20 to 50 mol% And more preferably 25 to 40 mol%.

The content of the repeating unit represented by the general formula (II-AB) in the resin (A) is preferably 10 to 60 mol%, more preferably 15 to 55 mol%, and still more preferably 20 to 55 mol% 50 mol%.

The resin (A) preferably contains a repeating unit represented by the general formula (3).

(7)

In the general formula (3)

R ₃₁ represents a hydrogen atom or an alkyl group.

R ₃₂ represents an alkyl group or a cycloalkyl group and specific examples thereof include a methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert- And the like.

R ₃₃ represents an atomic group necessary to form a monocyclic alicyclic hydrocarbon structure together with the carbon atom to which R ₃₂ is bonded. In the alicyclic hydrocarbon structure, a part of the carbon atoms constituting the ring may be substituted with a heteroatom or a group having a heteroatom.

The alkyl group represented by R ₃₁ may have a substituent, and examples of the substituent include a fluorine atom and a hydroxyl group. R ₃₁ preferably represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

R ₃₂ is preferably a methyl group, an ethyl group, an n-propyl group, an isopropyl group, a tert-butyl group or a cyclohexyl group, more preferably a methyl group, an ethyl group, an isopropyl group or a tert-butyl group.

The monocyclic alicyclic hydrocarbon structure formed by R ₃₃ together with the carbon atom is preferably a 3- to 8-membered ring, more preferably a 5-membered or 6-membered ring.

In the monocyclic alicyclic hydrocarbon structure formed by R &lt; ₃₃ &gt; together with the carbon atom, examples of the hetero atom which can form a ring include an oxygen atom and a sulfur atom. Examples of the group having a hetero atom include a carbonyl group and the like . However, the group having a hetero atom is preferably not an ester group (ester bond).

The monocyclic alicyclic hydrocarbon structure formed by R &lt; ₃₃ &gt; together with the carbon atom is preferably formed only from carbon atoms and hydrogen atoms.

The repeating unit represented by the general formula (3) is preferably a repeating unit represented by the following general formula (3 ').

[Chemical Formula 8]

In the general formula (3 '), R ₃₁ and R ₃₂ are the same as those in the general formula (3).

Specific examples of the repeating unit having a structure represented by the general formula (3) are shown below, but are not limited thereto.

[Chemical Formula 9]

The content of the repeating unit having the structure represented by the general formula (3) is preferably 20 to 80 mol%, more preferably 25 to 75 mol%, and more preferably 30 to 70 mol%, based on the total repeating units in the resin (A) Mol% is more preferable.

The resin (A) preferably has at least one of the repeating unit represented by the formula (I) and the repeating unit represented by the formula (II).

[Chemical formula 10]

Among the formulas (I) and (II)

R ₁ and R ₃ each independently represent a hydrogen atom, a methyl group which may have a substituent or a group represented by -CH ₂ -R ₁₁ . R ₁₁ represents a monovalent organic group.

R ₂ , R ₄ , R ₅ and R ₆ each independently represent an alkyl group or a cycloalkyl group.

R represents an atomic group necessary for forming an alicyclic structure together with the carbon atom to which R ₂ is bonded.

R ₁ and R ₃ preferably represent a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group. R ₁₁ represents a halogen atom (such as a fluorine atom), a hydroxyl group or a monovalent organic group, and examples thereof include an alkyl group having 5 or less carbon atoms and an acyl group having 5 or less carbon atoms, preferably an alkyl group having 3 or less carbon atoms And more preferably a methyl group.

The alkyl group in R ₂ may be linear or branched or may have a substituent.

The cycloalkyl group for R ₂ may be monocyclic, polycyclic or may have a substituent.

R ₂ is preferably an alkyl group, more preferably an alkyl group having 1 to 10 carbon atoms, and more preferably 1 to 5 carbon atoms, and examples thereof include a methyl group, ethyl group, n-propyl group, i- Tyl group and the like. As the alkyl group for R ₂ , a methyl group, an ethyl group, an i-propyl group and a t-butyl group are preferable.

R represents an atomic group necessary for forming an alicyclic structure together with a carbon atom. The alicyclic structure formed by R together with the carbon atom is preferably a monocyclic alicyclic structure, and its carbon number is preferably 3 to 7, more preferably 5 or 6.

R ₃ is preferably a hydrogen atom or a methyl group, more preferably a methyl group.

The alkyl group in R ₄ , R ₅ and R ₆ may be linear or branched or may have a substituent. As the alkyl group, those having 1 to 4 carbon atoms such as methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group and t-butyl group are preferable.

The cycloalkyl group for R ₄ , R ₅ and R ₆ may be monocyclic or polycyclic or may have a substituent. As the cycloalkyl group, monocyclic cycloalkyl groups such as cyclopentyl group and cyclohexyl group, polycyclic cycloalkyl groups such as norbornyl group, tetracyclodecanyl group, tetracyclododecanyl group and adamantyl group are preferable.

Examples of the substituent that each group may have include an alkyl group having 1 to 4 carbon atoms, a halogen atom, a hydroxyl group, an alkoxy group (having 1 to 4 carbon atoms), a carboxyl group, an alkoxycarbonyl group (having 2 to 6 carbon atoms) And the number of carbon atoms is preferably 8 or less.

In the general formula (II), R ₄ , R ₅ and R ₆ are preferably an alkyl group, and the total number of carbon atoms of R ₄ , R ₅ and R ₆ is preferably 5 or more, more preferably 6 or more, More preferably 7 or more.

It is more preferable that the resin (A) is a resin containing a repeating unit represented by the general formula (I) and a repeating unit represented by the general formula (II).

In another embodiment, it is more preferable to use a resin containing at least two repeating units represented by the general formula (I). When two or more kinds of repeating units of the general formula (I) are contained, it is preferable that repeating units in which the alicyclic structure formed by R together with the carbon atom is a monocyclic alicyclic structure and the repeating units in which R is a polycyclic It is preferable to include both repeating units which are alicyclic structures. The monocyclic alicyclic structure preferably has 5 to 8 carbon atoms, more preferably 5 or 6 carbon atoms, and particularly preferably 5 carbon atoms. As the polycyclic alicyclic structure, a norbornyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group are preferable.

The number of repeating units having an acid-decomposable group contained in the resin (A) may be one or two or more.

The content of the repeating unit represented by the formula (I) and / or the repeating unit represented by the formula (II) is preferably 20 to 80 mol% based on the total repeating units in the resin (A) , More preferably 25 to 75 mol%, further preferably 30 to 70 mol%.

The resin (A) preferably contains a repeating unit having a lactone structure or a sultone (cyclic sulfonic acid ester) structure.

As the lactone group or the sulfone group, any lactone or sultone structure may be used, preferably a lactone structure or a sultone structure of a 5- to 7-membered ring, and a lactone structure or a sultone structure of a 5- to 7- It is preferable that another ring structure is formed in a form that forms a structure with a structure and a spy. It is more preferable to have a lactone structure or a repeating unit having a sultone structure represented by any one of the following general formulas (LC1-1) to (LC1-17), (SL1-1) and (SL1-2). The lactone structure or the sultone structure may be directly bonded to the main chain. Preferred lactone structures or sultone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-8), and more preferably (LC1-4). By using a specific lactone structure or a sultone structure, the LWR and development defects are improved.

(11)

[Chemical Formula 12]

The lactone structure moiety or the sultone structure moiety may or may not have a substituent (Rb ₂ ). Examples of the preferable substituent (Rb ₂ ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 2 to 8 carbon atoms, a carboxyl group, a halogen atom, An anion group, and an acid-decomposable group. More preferably an alkyl group having 1 to 4 carbon atoms, a cyano group or an acid-decomposable group. n ₂ represents an integer of 0 to 4; When n ₂ is 2 or more, the plurality of substituents (Rb ₂ ) present may be the same or different, and the plurality of substituents (Rb ₂ ) present may bond to each other to form a ring.

The resin (A) preferably contains a repeating unit having a lactone structure or a sultone structure represented by the following general formula (III).

[Chemical Formula 13]

In the formula (III)

A represents an ester bond (a group represented by -COO-) or an amide bond (a group represented by -CONH-).

When there are a plurality of R ₀ , each independently represents an alkylene group, a cycloalkylene group, or a combination thereof.

When a plurality of Zs are present, each Z is independently a single bond, an ether bond, an ester bond, an amide bond, a urethane bond

[Chemical Formula 14]

Or a urea bond

[Chemical Formula 15]

. Here, R represents, independently of each other, a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group.

R ₈ represents a monovalent organic group having a lactone structure or a sultone structure.

n is a repetition number of the structure represented by -R ₀ -Z-, and represents an integer of 0 to 2.

R ₇ represents a hydrogen atom, a halogen atom or an alkyl group.

The alkylene group and cycloalkylene group of R &lt; ₀ &gt; may have a substituent.

Z is preferably an ether bond or an ester bond, particularly preferably an ester bond.

The alkyl group represented by R ₇ is preferably an alkyl group having 1 to 4 carbon atoms, more preferably a methyl group or an ethyl group, and particularly preferably a methyl group. The alkylene group, cycloalkylene group and alkyl group in R ₇ of R ₀ may be substituted, and examples of the substituent include halogen atoms and mercapto groups such as fluorine atom, chlorine atom and bromine atom, An alkoxy group such as a methoxy group, an ethoxy group, an isopropoxy group, a t-butoxy group and a benzyloxy group, and an acyloxy group such as an acetyloxy group and a propionyloxy group. R ₇ is preferably a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.

The preferred chain alkylene group in R ₀ is preferably a linear alkylene group having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms, and examples thereof include a methylene group, an ethylene group and a propylene group . The preferred cycloalkylene group is a cycloalkylene group having from 3 to 20 carbon atoms, and examples thereof include a cyclohexylene group, a cyclopentylene group, a norbornylene group and an adamantylene group. A chain alkylene group is more preferable for manifesting the effect of the present invention, and a methylene group is particularly preferable.

The monovalent organic group having a lactone structure or a sultone structure represented by R ₈ is not limited as long as it has a lactone structure or a sultone structure and specific examples thereof include the following general formulas (LC1-1) to (LC1-17), (SL1 -1) and (SL1-2), and a structure represented by (LC1-4) among them is particularly preferable. In addition, (LC1-1) ~ (LC1-17) , (SL1-1) and (SL1-2) n ₂ in is more preferably not more than two.

R ₈ is preferably a monovalent organic group having an unsubstituted lactone structure or a sultone structure, or a monovalent organic group having a lactone structure or a sultone structure having a methyl group, a cyano group, or an alkoxycarbonyl group as a substituent, More preferably a monovalent organic group having a lactone structure (cyanolactone) or a sultone structure (cyanosulfone) having a group as a substituent.

In the general formula (III), n is preferably 0 or 1.

The content of the repeating unit represented by the general formula (III) is preferably from 15 to 60 mol%, more preferably from 20 to 60 mol%, based on the total repeating units in the resin (A) , And more preferably 30 to 50 mol%.

The resin (A) may contain, in addition to the units represented by the general formula (III), a repeating unit having the above-mentioned lactone structure or a sultone structure.

The repeating unit having a lactone group or a sulfonate group usually has an optical isomer, but any of the optical isomers may be used. In addition, one kind of optical isomers may be used alone, or a plurality of optical isomers may be used in combination. When one kind of optical isomer is mainly used, the optical purity (ee) is preferably 90% or more, and more preferably 95% or more.

The content of the repeating unit having a lactone structure or a sultone structure other than the repeating unit represented by the general formula (III) is preferably 15 to 60 mol%, more preferably 15 to 60 mol% based on the total repeating units in the resin , Preferably 20 to 50 mol%, more preferably 30 to 50 mol%.

In order to enhance the effect of the present invention, it is also possible to use a combination of two or more lactones or a sultone repeating unit selected from the general formula (III). When used in combination, two or more kinds of lactone or sultone repeating units in which n is 0 in the general formula (III) are preferably used in combination.

The resin (A) preferably has a repeating unit containing an organic group having a polar group, particularly a repeating unit having an alicyclic hydrocarbon structure substituted with a polar group. This improves substrate adhesion and developer affinity. As the alicyclic hydrocarbon structure of the alicyclic hydrocarbon structure substituted with a polar group, adamanthyl group, dianthmyl group and novone are preferred. As the polar group, a hydroxyl group and a cyano group are preferable.

As the alicyclic hydrocarbon structure substituted with a polar group, a partial structure represented by the following general formulas (VIIa) to (VIId) is preferable.

[Chemical Formula 16]

Among the general formulas (VIIa) to (VIIc)

R ₂ c to R ₄ c each independently represent a hydrogen atom, a hydroxyl group or a cyano group. Provided that at least one of R ₂ c ~ R ₄ c represents a hydroxyl group, a cyano. Preferably R ₂ c ~ R ₄ c 1 or 2 hydroxyl groups of the dog, and the remainder is a hydrogen atom.

In formula (VIIa), _two of R ₂ c to R ₄ c are more preferably a hydroxyl group and the remainder are hydrogen atoms.

As the repeating unit having a group represented by the general formulas (VIIa) to (VIId), at least one of R ₁₃ 'to R ₁₆ ' in the general formula (II-AB1) or (II- having a group represented (e.g., a represents an R ₅ in -COOR ₅ represented by the general formula (VIIa) ~ (VIId)) , or to the following formula (AIIa) ~, such as repeating unit represented by (AIId) .

[Chemical Formula 17]

Of the general formulas (AIIa) to (AIId)

R _1c represents a hydrogen atom, a methyl group, a trifluoromethyl group, or a hydroxymethyl group.

R ₂ c ~ R ₄ c is a R ₂ c ~ R ₄ c and agreement in the formula (VIIa) ~ (VIIc).

Specific examples of the repeating unit having a structure represented by formulas (AIIa) to (AIId) are set forth below, but the present invention is not limited thereto.

[Chemical Formula 18]

The content of the repeating unit having an organic group having a polar group in the resin (A) is preferably 1 to 40 mol%, more preferably 5 to 30 mol%, and still more preferably 5 to 20 mol% to be.

The resin (A) may also contain a repeating unit which has an alicyclic hydrocarbon structure and does not exhibit acid decomposability. This makes it possible to reduce the elution of the low-molecular component from the resist film into the immersion liquid upon immersion exposure. Examples of such a repeating unit include 1-adamantyl (meth) acrylate, tricyclodecanyl (meth) acrylate, and cyclohexyl (meth) acrylate.

In the resin (A), the content of the repeating unit having an alicyclic hydrocarbon structure and showing no acid decomposability is preferably 1 to 40 mol%, more preferably 5 to 30 mol%, and still more preferably 5 to 20 mol% More preferably 20 mol%.

The resin (A) may contain, in addition to the repeating units described above, repeating units derived from various monomers for the purpose of adjusting various properties. Examples of such monomers include acrylic acid esters, methacrylic acid esters, A compound having one addition polymerizable unsaturated bond selected from acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters and the like.

In addition, the addition-polymerizable unsaturated compound copolymerizable with the monomer corresponding to the above various repeating units may be copolymerized.

The content of the repeating unit derived from the monomer in the resin (A) can also be appropriately set, but the content of the repeating unit having a partial structure represented by the general formulas (pI) to (pV) -AB) is preferably 99 mol% or less, more preferably 90 mol% or less, and still more preferably 80 mol% or less based on the total molar amount of the repeating units represented by the formula

When the resist composition of the present invention is used for ArF exposure, from the viewpoint of transparency to ArF light, it is preferable that the resin (A) does not have an aromatic group.

As the resin (A), preferably all the repeating units are composed of (meth) acrylate-based repeating units. In this case, both of the repeating units may be methacrylate-based repeating units, all of the repeating units are acrylate-based repeating units, and all of the repeating units are methacrylate-based repeating units / acrylate-based repeating units. It is preferable that the acrylate-based repeating unit accounts for 50 mol% or less of the total repeating units.

The resin (A) contains at least a (meth) acrylate-based repeating unit having a lactone ring, a (meth) acrylate-based repeating unit having an organic group substituted with at least one of a hydroxyl group and a cyano group, Methacrylate-based repeating units are preferred.

Preferably 20 to 50 mol% of a repeating unit having a partial structure represented by any one of formulas (pI) to (pV), 20 to 50 mol% of a repeating unit having a lactone structure, a repeating unit having an alicyclic hydrocarbon structure substituted with a polar group And 5 to 30 mol%, or 0 to 20 mol% of other repeating units.

As the preferable resin (A), for example, resins described in paragraphs <0152> to <0158> of JP-A No. 2008-309878 can be mentioned, but the present invention is not limited thereto.

The resin (A) can be synthesized by a conventional method (for example, radical polymerization). Examples of the general synthesis method include a batch polymerization method in which a monomer species and an initiator are dissolved in a solvent and heated to effect polymerization, a drop polymerization method in which a solution of a monomer species and an initiator is added dropwise to a heating solvent for 1 to 10 hours, And a dropwise polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether; Ketones such as methyl ethyl ketone and methyl isobutyl ketone; An ester solvent such as ethyl acetate; Amide solvents such as dimethylformamide and dimethylacetamide; A solvent for dissolving the resist composition of the present invention such as propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone described below; And the like. More preferably, the polymerization is carried out using the same solvent as the solvent used in the resist composition of the present invention. This makes it possible to suppress the generation of particles during storage.

The polymerization reaction is preferably carried out in an inert gas atmosphere such as nitrogen or argon. As the polymerization initiator, polymerization is initiated by using a commercially available radical initiator (azo type initiator, peroxide, etc.). As the radical initiator, azo-based initiators are preferable, and azo-based initiators having an ester group, a cyano group, and a carboxyl group are more preferable. Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2'-azobis (2-methylpropionate). An initiator is added according to the purpose or added in portions. After completion of the reaction, the polymer is added to a solvent to recover a desired polymer by a method such as powder or solid recovery. The concentration of the reactant is 5 to 50 mass%, preferably 10 to 30 mass%. The reaction temperature is usually from 10 to 150 캜, preferably from 30 to 120 캜, more preferably from 60 to 100 캜.

The purification may be carried out by a liquid-liquid extraction method in which residual monomer or oligomer component is removed by combining water or an appropriate solvent; A purification method in a solution state such as ultrafiltration in which only a substance having a specific molecular weight or less is extracted and removed; A repulping method in which the residual monomer or the like is removed by dropping the resin solution into a poor solvent to solidify the resin in a poor solvent; A method of purification in a solid state such as washing the resin slurry separated by filtration with a poor solvent; And the like can be applied.

The weight average molecular weight (Mw) of the resin (A) is preferably 1,000 to 200,000, more preferably 1,000 to 20,000, and still more preferably 1,000 to 15,000, in terms of polystyrene conversion by GPC (Gel Permeation Chromatography) to be. By setting the weight average molecular weight to 1,000 to 200,000, deterioration of heat resistance and dry etching resistance can be prevented, deterioration of developability or viscosity can be prevented and deterioration of film formability can be prevented.

The dispersion degree (molecular weight distribution) which is the ratio (Mw / Mn) of the weight average molecular weight (Mw) to the number average molecular weight (Mn) in the resin (A) is usually 1 to 5, preferably 1 to 3, Preferably 1.2 to 3.0, and particularly preferably 1.2 to 2.0. The smaller the degree of dispersion, the better the resolution and the resist shape, and the sidewall of the resist pattern is smooth and the roughness is excellent.

The weight average molecular weight and the number average molecular weight in this specification were measured by using HLC-8120 (manufactured by TOSOH CORPORATION) and TSK gel Multipore HXL-M (manufactured by TOSOH CORPORATION, 7.8 mm ID x 30.0 cm) as a column And is measured using THF (tetrahydrofuran) as an eluent.

The blending amount of the resin (A) in the whole resist composition of the present invention is preferably 50 to 99.9 mass%, more preferably 60 to 99.0 mass%, of the total solid content.

In the present invention, the resin (A) may be used singly or in combination.

It is preferable that the resin (A), preferably the resist composition of the present invention, does not contain a fluorine atom and a silicon atom from the viewpoint of compatibility with the top coat composition.

(B) a compound which generates an acid upon irradiation with an actinic ray or radiation

The resist composition of the present invention contains a compound which generates an acid upon irradiation with an actinic ray or radiation (hereinafter also referred to as "acid generator", "photoacid generator" or "component (B)").

Examples of such photoacid generators include photoinitiators for photocationic polymerization, photoinitiators for photo radical polymerization, photochromic agents for dyes, photochromic agents, and known compounds that generate an acid by irradiation with an actinic ray or radiation used in a micro- Compounds and mixtures thereof can be appropriately selected and used.

For example, a diazonium salt, a phosphonium salt, a sulfonium salt, an iodonium salt, an imidosulfonate, an oximesulfonate, a diazodisulfone, a disulfone, o-nitrobenzylsulfonate.

Further, a group or a group capable of generating an acid upon irradiation with these actinic rays or radiation is introduced into the main chain or side chain of the polymer, for example, compounds disclosed in U.S. Patent No. 3,849,137, German Patent Publication No. 3914407, Japanese Patent Application Laid-Open Nos. 63-26653, 55-164824, 62-69263, 63-146038, 63-163452, 62-153853, JP-A-63-146029 and the like can be used.

Compounds that generate an acid by the light described in U.S. Patent No. 3,779,778 and European Patent Publication No. 126,712 can also be used.

The acid generator contained in the composition of the present invention is preferably a compound which generates an acid having a cyclic structure by irradiation with an actinic ray or radiation. As the cyclic structure, a monocyclic or polycyclic alicyclic group is preferable, and a polycyclic alicyclic group is more preferable. As the carbon atom constituting the ring skeleton of the peroxy group, it is preferable that it does not contain carbonyl carbon.

As the acid generator contained in the composition of the present invention, for example, a compound (hereinafter also referred to as a "specific acid generator") which generates an acid by irradiation of an actinic ray or radiation represented by the following general formula .

[Chemical Formula 19]

(Anion)

In the general formula (3)

Xf each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.

R ₄ and R ₅ each independently represent a hydrogen atom, a fluorine atom, an alkyl group, or an alkyl group substituted with at least one fluorine atom, and when there are a plurality of R ₄ and R _{5, they} may be the same or different.

L represents a divalent linking group, and L in the case where a plurality is present may be the same or different.

W represents an organic group including a cyclic structure.

o represents an integer of 1 to 3; p represents an integer of 0 to 10; q represents an integer of 0 to 10;

Xf represents a fluorine atom or an alkyl group substituted with at least one fluorine atom. The number of carbon atoms of the alkyl group is preferably 1 to 10, more preferably 1 to 4. It is preferable that the alkyl group substituted with at least one fluorine atom is a perfluoroalkyl group.

Xf is preferably a fluorine atom or a perfluoroalkyl group having 1 to 4 carbon atoms. Xf is more preferably a fluorine atom or CF ₃ . Particularly, it is preferable that both Xf's are fluorine atoms.

R ₄ and R ₅ each independently represent a hydrogen atom, a fluorine atom, an alkyl group, or an alkyl group substituted with at least one fluorine atom, and when there are a plurality of R ₄ and R _{5, they} may be the same or different.

The alkyl group as R ₄ and R ₅ may have a substituent and preferably has 1 to 4 carbon atoms. R ₄ and R ₅ are preferably hydrogen atoms.

Specific examples of the alkyl group substituted with at least one fluorine atom of R ₄ and R ₅ and a suitable embodiment thereof are the same as the specific examples and suitable embodiments of Xf in the general formula (3).

L represents a divalent linking group, and L in the case where a plurality is present may be the same or different.

Examples of the divalent linking group include -COO- (-C (= O) -O-), -OCO-, -CONH-, -NHCO-, -CO-, -O-, -S-, , -SO ₂ -, an alkylene group (preferably having 1 to 6 carbon atoms), cycloalkyl group (preferably having 3 to 10 carbon atoms), alkenyl group (preferably having a carbon number of 2-6) by combining a plurality of these, or And a divalent linking group. Of these, the groups represented by -COO-, -OCO-, -CONH-, -NHCO-, -CO-, -O-, -SO ₂ -, -COO-alkylene group, -OCO-alkylene group, More preferably -COO-, -OCO-, -CONH-, -SO ₂ -, -COO-alkylene group or -OCO-alkylene group.

W represents an organic group including a cyclic structure. Among them, a cyclic organic group is preferable.

Examples of the cyclic organic group include a ring group, an aryl group, and a heterocyclic group.

The alicyclic group may be monocyclic or polycyclic. Examples of the monocyclic heterocyclic group include monocyclic cycloalkyl groups such as cyclopentyl group, cyclohexyl group, and cyclooctyl group. Examples of polycyclic cyclic groups include polycyclic cycloalkyl groups such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, and an adamantyl group. Among them, an alicyclic group having a bulky structure having at least 7 carbon atoms, such as a norbornyl group, a tricyclodecanyl group, a tetracyclodecanyl group, a tetracyclododecanyl group, a dianthyl group and an adamantyl group, From the viewpoints of suppression of diffusion in the film and improvement of MEEF (Mask Error Enhancement Factor).

The aryl group may be monocyclic or polycyclic. Examples of the aryl group include a phenyl group, a naphthyl group, a phenanthryl group and an anthryl group. Among them, a naphthyl group having a relatively low optical absorbance at 193 nm is preferable.

The heterocyclic group may be monocyclic or polycyclic, but the polycyclic acid can further suppress the diffusion of acid. The heterocyclic group may have aromaticity or may not have aromaticity. Examples of the heterocycle having an aromatic group include a furan ring, a thiophene ring, a benzofuran ring, a benzothiophene ring, a dibenzofuran ring, a dibenzothiophene ring, and a pyridine ring. Examples of the heterocyclic ring having no aromaticity include tetrahydropyran ring, lactone ring, sultone ring and decahydroisoquinoline ring. As the heterocyclic ring in the heterocyclic group, a furan ring, a thiophene ring, a pyridine ring, or a decahydroisoquinoline ring is particularly preferable. Examples of the lactone ring and the sultone ring include the lactone structure and the sultone structure exemplified in the above-mentioned resin.

The cyclic organic group may have a substituent. Examples of the substituent include an alkyl group (any of linear or branched, preferably 1 to 12 carbon atoms), a cycloalkyl group (monocyclic, polycyclic or spirocyclic, preferably 3 to 20 carbon atoms) An aryl group (preferably having 6 to 14 carbon atoms), a hydroxyl group, an alkoxy group, an ester group, an amide group, a urethane group, a ureido group, a ureido group, a thioether group, a sulfonamide group and a sulfonic acid ester group. In addition, carbon constituting the cyclic organic group (carbon contributing to ring formation) may be carbonyl carbon.

o represents an integer of 1 to 3; p represents an integer of 0 to 10; q represents an integer of 0 to 10;

In one embodiment, o in the general formula (3) is an integer of 1 to 3, p is an integer of 1 to 10, and q is preferably 0. Xf is preferably a fluorine atom, and R ₄ and R ₅ are preferably hydrogen atoms, and W is preferably a polycyclic hydrocarbon group. o is more preferably 1 or 2, and more preferably 1. More preferably, p is an integer of 1 to 3, more preferably 1 or 2, and particularly preferably 1. W is more preferably a polycyclic cycloalkyl group, and more preferably an adamantyl group or a diamantyl group.

(Cation)

In the general formula (3), X &lt; ⁺ &gt; represents a cation.

X ^{&lt; +} & gt ^; is not particularly limited as long as it is a cation, and preferred examples thereof include cations (parts other than Z ^- ) in the general formula (ZI), (ZII) or (ZIII) described later.

(Suitable embodiments)

Suitable examples of specific acid generators include, for example, compounds represented by the following general formula (ZI), (ZII) or (ZIII).

[Chemical Formula 20]

In the above general formula (ZI)

R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represent an organic group.

The number of carbon atoms of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1 to 30, preferably 1 to 20.

Also, R ₂₀₁ and R ~ form a ring structure by combining two of the dogs _203, may contain an oxygen atom, a sulfur atom, an ester bond in the ring, an amide bond, a carbonyl group. Examples of R groups to form ₂₀₁ ~ R ₂₀₃ 2 dogs in combination of, there may be mentioned an alkylene group (e.g., tert-butyl group, a pentylene group).

Z ^- represents an anion in the general formula (3), and specifically represents the following anion.

[Chemical Formula 21]

Examples of the organic groups represented by R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include the corresponding groups in the compounds (ZI-1), (ZI-2), (ZI-3) and (ZI-4) .

Further, a compound having a plurality of structures represented by the general formula (ZI) may be used. For example, at least one of formulas (ZI) the compound of R ₂₀₁ ~ R ₂₀₃ represented by the general formula (ZI) to another compound of R ₂₀₁ ~ R ₂₀₃ of at least one, and a single bond or a linking group represented by Or may be a compound having a structure interposed therebetween.

More preferred examples of the component (ZI) include compounds (ZI-1), (ZI-2), and (ZI-3) and (ZI-4) described below.

First, the compound (ZI-1) is described.

The compound (ZI-1) is an arylsulfonium compound in which at least one of R ₂₀₁ to R ₂₀₃ in the general formula (ZI) is an aryl group, that is, a compound in which arylsulfonium is a cation.

Aryl sulfonium compounds, R ₂₀₁ ~ R ₂₀₃ are all aryl contribution, R ₂₀₁ ~ R ₂₀₃ is part of an aryl group, and the remaining credit is alkyl or cycloalkyl.

Examples of the arylsulfonium compound include a triarylsulfonium compound, a diarylalkylsulfonium compound, an aryl dialkylsulfonium compound, a diarylcycloalkylsulfonium compound, and an aryldicycloalkylsulfonium compound.

The aryl group of the arylsulfonium compound is preferably a phenyl group or a naphthyl group, more preferably a phenyl group. The aryl group may be an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom or the like. Examples of the heterocyclic structure include a pyrrole residue, a furan residue, a thiophen residue, an indole residue, a benzofuran residue, and a benzothiophen residue. In the case where the arylsulfonium compound has two or more aryl groups, the aryl groups present in two or more aryl groups may be the same or different.

The alkyl group or cycloalkyl group which the arylsulfonium compound optionally has is preferably a straight chain or branched alkyl group having 1 to 15 carbon atoms and a cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, A t-butyl group, a sec-butyl group, a t-butyl group, a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.

R ₂₀₁ ~ aryl group, an alkyl group, a cycloalkyl group of R ₂₀₃ is an alkyl group (e.g., having from 1 to 15 carbon atoms), a cycloalkyl group, an aryl group (for example, the carbon number of 6 to 14 g) (for example, a carbon number of 3 to 15 g), An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, and a phenylthio group.

Next, the compound (ZI-2) is described.

The compound (ZI-2) is a compound in which R ₂₀₁ to R ₂₀₃ in the formula (ZI) each independently represent an organic group having no aromatic ring. Here, the aromatic ring includes an aromatic ring containing a hetero atom.

The organic group containing no aromatic ring as R ₂₀₁ to R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.

R ₂₀₁ to R ₂₀₃ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group or a vinyl group, more preferably a straight or branched 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylmethyl group, Preferably a linear or branched 2-oxoalkyl group.

R Examples ₂₀₁ to the alkyl group and cycloalkyl group of R _203, preferably, straight-chain or branched alkyl group having 1 to 10 carbon atoms (e.g., methyl, ethyl, propyl, views group, a pentyl group), cycloalkyl having 3 to 10 carbon atoms An alkyl group (cyclopentyl group, cyclohexyl group, norbornyl group).

R ₂₀₁ to R ₂₀₃ may be further substituted by a halogen atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.

Next, the compound (ZI-3) is described.

The compound (ZI-3) is a compound represented by the following general formula (ZI-3) and is a compound having a phenacylsulfonium salt structure.

[Chemical Formula 22]

Of the general formula (ZI-3)

R _1c to R _5c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a halogen atom, An alkylthio group, or an arylthio group.

R _6c and R _7c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group or an aryl group.

R _x and R _y each independently represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group or a vinyl group.

Any two or more of R _1c to R _5c , R _5c and R _6c , R _6c and R _7c , R _5c and R _x , and R _x and R _y may be bonded to each other to form a ring structure, May contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond.

Examples of the ring structure include aromatic or non-aromatic hydrocarbon rings, aromatic or non-aromatic heterocyclic rings, and polycyclic fused rings formed by combining two or more of these rings. The ring structure may be a 3- to 10-membered ring, preferably a 4- to 8-membered ring, more preferably a 5-membered or 6-membered ring.

_Examples of the group formed by combining any two or more of R _1c to R _5c , R _6c and R _7c , and R _x and R _y include a butylene group and a pentylene group.

The group formed by combining R _5c and R _6c and R _5c with R _x is preferably a single bond or an alkylene group, and examples of the alkylene group include a methylene group and an ethylene group.

Zc ^- represents an anion in the general formula (3), and is specifically as described above.

Specific examples of the alkoxy group in the alkoxycarbonyl groups as R _1c ~ R _5c are the same as specific examples of the alkoxy group as R _1c ~ R _5c.

Specific examples of the alkyl group as R _1c to R _5c in the alkylcarbonyloxy group and the alkylthio group are the same as the specific examples of the alkyl group as R _1c to R _5c .

Specific examples of the cycloalkyl groups in the cycloalkyl oxy carbonyl as R _1c ~ R _5c are the same as specific examples of the cycloalkyl group as R _1c ~ R _5c embodiment.

Specific examples of the aryl group in the aryloxy group, and aryl Im come as R _1c ~ R _5c are the same as specific examples of the aryl group as R _1c ~ R _5c embodiment.

Examples of the cation in the compound (ZI-2) or (ZI-3) in the present invention include the cation described after the paragraph <0036> of United States Patent Application Publication No. 2012/0076996.

Next, the compound (ZI-4) is described.

The compound (ZI-4) is represented by the following general formula (ZI-4).

(23)

Among the general formula (ZI-4)

R ₁₃ represents a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, or a group having a cycloalkyl group. These groups may have a substituent.

R ₁₄ each independently represents a group having a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group or a cycloalkyl group. These groups may have a substituent.

Each R ₁₅ independently represents an alkyl group, a cycloalkyl group or a naphthyl group. These groups may have a substituent. Two R &lt; ₁₅ &gt; may be bonded to each other to form a ring. When two R &lt; ₁₅ &gt; are bonded to each other to form a ring, a hetero atom such as an oxygen atom or a nitrogen atom may be contained in the ring skeleton. In one aspect, it is preferable that two R &lt; ₁₅ &gt; are alkylene groups and combine with each other to form a ring structure.

and l represents an integer of 0 to 2.

r represents an integer of 0 to 8;

Z ^- represents an anion in the general formula (3), and is specifically as described above.

In the formula _{(ZI-4), R 13} , R 14 and the alkyl group of R _15, a straight-chain or branched, preferably from 1 to 10 carbon atoms, and methyl, ethyl, n- group view, t -Butyl group and the like are preferable.

As the cations of the compound represented by the general formula (ZI-4) in the present invention, there are cations of the compounds disclosed in Japanese Patent Application Laid-Open No. 2010-256842, paragraphs <0121>, <0123>, <0124>, and Japanese Patent Laid-Open Publication No. 2011-76056 <0127>, <0129>, <0130>, and the like.

Next, the general formulas (ZII) and (ZIII) will be described.

In the general formulas (ZII) and (ZIII), R ₂₀₄ to R ₂₀₇ independently represent an aryl group, an alkyl group or a cycloalkyl group.

The aryl group represented by R ₂₀₄ to R ₂₀₇ is preferably a phenyl group or a naphthyl group, more preferably a phenyl group. The aryl group of R ₂₀₄ to R _{207 may be} an aryl group having a heterocyclic structure having an oxygen atom, a nitrogen atom, a sulfur atom and the like. The skeleton of the aryl group having a heterocyclic structure includes, for example, pyrrole, furan, thiophene, indole, benzofuran, benzothiophene and the like.

The alkyl group and the cycloalkyl group represented by R ₂₀₄ to R ₂₀₇ are preferably a straight chain or branched alkyl group having 1 to 10 carbon atoms (for example, methyl group, ethyl group, propyl group, butyl group, pentyl group) (Cyclopentyl group, cyclohexyl group, and norbornyl group).

The aryl group, alkyl group and cycloalkyl group represented by R ₂₀₄ to R ₂₀₇ may have a substituent. Examples of the substituent which the aryl group, alkyl group and cycloalkyl group of R ₂₀₄ to R ₂₀₇ may have include an alkyl group (for example, having 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms) (For example, having from 6 to 15 carbon atoms), an alkoxy group (for example, from 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, phenylthio group and the like.

Z ^- represents an anion in the general formula (3), and is specifically as described above.

The acid generator may be used alone or in combination of two or more.

The content of the acid generator in the resist composition of the present invention (when the plural kinds of acid generators are present, the total amount thereof is the same hereinafter) is 16.5 mass% or more based on the total solid content of the resist composition of the present invention. As a result, the CDU and the LER are superior due to an increase in foot production.

The content of the acid generator is preferably from 17.0 to 35.0 mass%, more preferably from 20.0 to 28.0 mass%, and more preferably from 20.0 mass% to 20.0 mass%, based on the total solid content of the resist composition of the present invention, By mass to 28.0% by mass or less.

(C) Solvent

Examples of the solvent that can be used when preparing the resist composition by dissolving each of the above components include alkylene glycol monoalkyl ether carboxylates, alkylene glycol monoalkyl ethers, lactic acid alkyl esters, alkyl alkoxypropionates, A cyclic lactone of 4 to 10 carbon atoms, a monoketone compound of 4 to 10 carbon atoms which may contain a ring, an alkylene carbonate, an alkyl alkoxyacetate, and an alkyl pyruvate.

The alkylene glycol monoalkyl ether carboxylate includes, for example, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol mono Propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate .

Examples of the alkylene glycol monoalkyl ether include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, ethylene Glycol monomethyl ether, and ethylene glycol monoethyl ether.

As the lactic acid alkyl ester, for example, methyl lactate, ethyl lactate, propyl lactate, and butyl lactate are preferably used.

As the alkyl alkoxypropionate, for example, ethyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl 3-ethoxypropionate and ethyl 3-methoxypropionate are preferably used.

Examples of the cyclic lactone having 4 to 10 carbon atoms include? -Propiolactone,? -Butyrolactone,? -Butyrolactone,? -Methyl-? -Butyrolactone,? -Methyl- ? -valerolactone,? -caprolactone,? -octanoic lactone, and? -hydroxy-? -butyrolactone.

Examples of the monoketone compound having 4 to 10 carbon atoms and optionally containing a ring include 2-butanone, 3-methylbutanone, pinacolone, 2-pentanone, 3-pentanone, Methyl-2-pentanone, 4,4-dimethyl-2-pentanone, 2,4-dimethyl-3-pentanone, 2,2,4 Methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-methyl-3 3-heptanone, 2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-one, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2-decanone, 3-decanone, 4-decanone, , 2-dimethylcyclopentanone, 2,4,4-trimethylcyclopentanone, cyclohexanone, 3-methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone, 2,2- Dimethyl cyclohexanone, 2,6-dimethyl cyclohexanone, 2,2 , 6-trimethylcyclohexanone, cycloheptanone, 2-methylcycloheptanone and 3-methylcycloheptanone.

As the alkylene carbonate, for example, propylene carbonate, vinylene carbonate, ethylene carbonate, and butylene carbonate are preferably used.

Examples of the alkyl alkoxyacetate include 2-methoxyethyl acetate, 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate, 3-methoxy- Acetic acid-1-methoxy-2-propyl.

As the alkyl pyruvate, for example, methyl pyruvate, ethyl pyruvate and propyl pyruvate are preferably used.

As the solvent which can be preferably used, a solvent having a boiling point of 130 캜 or higher can be mentioned under ordinary temperature and normal pressure. Specific examples thereof include cyclopentanone,? -Butyrolactone, cyclohexanone, ethyl lactate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, ethyl 3-ethoxypropionate, ethyl pyruvate , 2-ethoxyethyl acetate, 2- (2-ethoxyethoxy) ethyl acetate, propylene carbonate, butyl butyl acrylate, isoamyl acetate and methyl 2-hydroxyisobutyrate.

In the present invention, the above-mentioned solvents may be used alone, or two or more of them may be used in combination.

In the present invention, a mixed solvent obtained by mixing a solvent containing a hydroxyl group and a solvent not containing a hydroxyl group in the structure may be used as the organic solvent.

Examples of the solvent containing a hydroxyl group include ethylene glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol Ethyl lactate, etc. Among them, propylene glycol monomethyl ether and ethyl lactate are particularly preferable.

Examples of the solvent that does not contain a hydroxyl group include propylene glycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone,? -Butyrolactone, cyclohexanone, Propyleneglycol monomethyl ether acetate, ethyl ethoxypropionate, 2-heptanone, γ-butyrolactone, γ-butyrolactone, N-dimethylacetamide, Particularly preferred are lactone, cyclohexanone and butyl acetate, and propylene glycol monomethyl ether acetate, ethyl ethoxypropionate and 2-heptanone are most preferred.

The mixing ratio (mass ratio) of the hydroxyl group-containing solvent to the hydroxyl group-containing solvent is from 1/99 to 99/1, preferably from 10/90 to 90/10, more preferably from 20/80 to 60/40 . A mixed solvent containing 50 mass% or more of a solvent not containing a hydroxyl group is particularly preferable in view of coating uniformity.

The solvent is preferably two or more mixed solvents containing propylene glycol monomethyl ether acetate.

(D) Hydrophobic resin

The resist composition of the present invention may contain (D) a hydrophobic resin. As the hydrophobic resin, for example, a resin (X) described later which may contain the topcoat composition may be suitably used. Also, for example, the "[4] hydrophobic resin (D)" described in paragraphs <0389> to <0474> of Japanese Laid-Open Patent Publication No. 2014-149409 is also suitably used.

The weight average molecular weight of the hydrophobic resin (D) in terms of standard polystyrene is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, and even more preferably 2,000 to 15,000.

The hydrophobic resin (D) may be used singly or in combination.

The content of the hydrophobic resin (D) in the composition is preferably 0.01 to 10% by mass, more preferably 0.05 to 8% by mass, and even more preferably 0.1 to 7% by mass based on the total solid content in the resist composition of the present invention .

(E) Basic compound

The resist composition of the present invention preferably contains a basic compound (E) in order to reduce the change in performance over time from exposure to heating.

The basic compound is preferably a compound having a structure represented by the following formulas (A) to (E).

&Lt; EMI ID =

Among the general formulas (A) to (E)

R ²⁰⁰ , R ²⁰¹ and R ²⁰² may be the same or different and each represents a hydrogen atom, an alkyl group (preferably having 1 to 20 carbon atoms), a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (having 6 to 20 carbon atoms) , Wherein R ²⁰¹ and R ²⁰² may be bonded to each other to form a ring.

As the alkyl group having a substituent for the alkyl group, an aminoalkyl group having 1 to 20 carbon atoms, a hydroxyalkyl group having 1 to 20 carbon atoms, or a cyanoalkyl group having 1 to 20 carbon atoms is preferable.

R ²⁰³ , R ²⁰⁴ , R ²⁰⁵ and R ²⁰⁶ may be the same or different and represent an alkyl group having 1 to 20 carbon atoms.

The alkyl groups in the general formulas (A) to (E) are more preferably unoriented.

Preferred examples of the compound include guanidine, aminopyrrolidine, pyrazole, pyrazoline, piperazine, aminomorpholine, aminoalkylmorpholine and piperidine. More preferred compounds include imidazole structure, diazabicyclic An onium hydroxide structure, an onium carboxylate structure, a trialkylamine structure, an aniline structure or a pyridine structure, an alkylamine derivative having a hydroxyl group and / or an ether bond, an aniline derivative having a hydroxyl group and / or an ether bond, etc. .

Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole and the like. Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] Javancyclo [5,4,0] undec-7-ene, and the like. Examples of the compound having an onium hydroxide structure include triarylsulfonium hydroxide, phenacysulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris (t -Butylphenyl) sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, 2-oxopropylthiophenium hydroxide and the like. As the compound having an onium carboxylate structure, the anion portion of the compound having an onium hydroxide structure is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate and perfluoroalkyl carboxylate . Examples of the compound having a trialkylamine structure include tri (n-butyl) amine and tri (n-octyl) amine. Examples of the aniline compound include 2,6-diisopropylaniline, N, N-dimethylaniline, N, N-dibutyl aniline and N, N-dibutylaniline. Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, tris (methoxyethoxyethyl) amine and the like. Examples of the aniline derivative having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline and the like.

As the basic compound, it is also suitably used to describe it as a basic compound which may be contained in a composition (top coat composition) for forming an upper layer which will be described later.

These basic compounds may be used alone or in combination of two or more.

The amount of the basic compound to be used is usually 0.001 to 10 mass%, preferably 0.01 to 5 mass%, based on the solid content of the resist composition of the present invention.

The ratio of the photoacid generator to the basic compound in the resist composition is preferably from 2.5 to 300 as the photoacid generator / basic compound (molar ratio). That is, the mole ratio in terms of sensitivity and resolution is preferably 2.5 or more, and is preferably 300 or less from the viewpoint of suppressing reduction in resolution due to thickening of the resist pattern with time after exposure to heat treatment. The photoacid generator / basic compound (molar ratio) is more preferably 5.0 to 200, and still more preferably 7.0 to 150.

(F) Surfactant

The resist composition of the present invention preferably further contains (F) a surfactant, and is preferably a fluorine-based and / or silicon-based surfactant (fluorine-based surfactant, silicon-based surfactant or surfactant having both fluorine and silicon atoms) It is more preferable to contain one, or two or more kinds.

When the resist composition of the present invention contains the above surfactant (F), it is possible to impart a resist pattern with good adhesiveness and low development defects with good sensitivity and resolution at the time of using an exposure light source of 250 nm or less, particularly 220 nm or less .

As the fluorine-based and / or silicon-based surfactants, there can be mentioned, for example, JP-A 62-36663, JP-A 61-226746, JP-A 61-226745, JP-A 62-170950 Japanese Patent Application Laid-Open No. 63-34540, Japanese Patent Application Laid-Open No. 7-230165, Japanese Patent Application Laid-Open No. 8-62834, Japanese Laid-Open Patent Application No. 9-54432, Japanese Laid-Open Patent Publication No. 9-5988 Surfactants described in Japanese Patent Application Laid-Open No. 2002-277862, U.S. Patent Nos. 5405720, 5360692, 5529881, 5296330, 5436098, 5576143, 5294511 and 5824451 And the following surfactants commercially available may be used as they are.

Examples of commercially available surfactants that can be used include surfactants such as EFtop EF301 and EF303 (manufactured by Shin-Akita Kasei Corporation), Fluorad FC430, 431 and 4430 (manufactured by Sumitomo 3M Co., Ltd.), Megafac F171, F173 and F176 , Surflon S-382, SC101, 102, 103, 104, 105 and 106 (manufactured by Asahi Glass Co., Ltd.), F189, F113, F110, F177, F120 and R08 (manufactured by Dainippon Ink and Chemicals, , GF-300, GF-150 (manufactured by Toagosei Chemical Industry Co., Ltd.), Surflon S-393 (manufactured by Seiyi Chemical Co., Ltd.) FTX-204D, 208G, 218G, 230G (manufactured by OMNOVA), PF636, PF656, PF6320, PF652 (manufactured by OMNOVA), EF121, EF122A, EF122B, RF122C, EF125M, EF135M, EF351, 352, EF801, EF802, EF601 , 204D, 208D, 212D, 218, and 222D (manufactured by Neos Co., Ltd.), and silicone surfactants. Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicone surfactant.

In addition to the known surfactants described above, examples of the surfactant include fluorosurfactants derived from fluoroaliphatic compounds prepared by the telomerization method (also referred to as the telomer method) or the oligomerization method (also referred to as the oligomer method) A surfactant using a polymer having an aliphatic group can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.

As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate and / or (poly (oxyalkylene)) methacrylate is preferable, and irregularly distributed Or may be subjected to block copolymerization. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group and a poly (oxybutylene) group, and also poly (oxyethylene, oxypropylene and oxyethylene Or may be a unit having another chain alkylene in the same chain length such as a poly (block-linked product of oxyethylene and oxypropylene). The copolymer of the (fluoroaliphatic) group-containing monomer and (poly (oxyalkylene)) acrylate (or methacrylate) is not limited to a binary copolymer but also a monomer having two or more different fluoroaliphatic groups, (Poly (oxyalkylene)) acrylate (or methacrylate) copolymerized at the same time with the above-mentioned copolymer.

Examples of commercially available surfactants include Megapak F 178, F-470, F-473, F-475, F-476 and F-472 (manufactured by Dainippon Ink and Chemicals, Inc.) . (Or methacrylate) having a C ₆ F ₁₃ group and a copolymer of (poly (oxyalkylene)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C ₃ F ₇ group, And copolymers of (poly (oxyethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate (or methacrylate).

In the present invention, surfactants other than fluorine-based and / or silicon-based surfactants may also be used. Specific examples thereof include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether and polyoxyethylene oleyl ether, polyoxyethylene octyl phenol ether , Polyoxyethylene alkyl allyl ethers such as polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitol Polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan monostearate, Polyoxyethylene sorbitan fatty acid esters such as ethylene propylene tereolate, polyoxyethylene sorbitan sesquioleate, , And the like.

These surfactants may be used alone or in combination of several.

The amount of the surfactant (F) to be used is preferably 0.01 to 10% by mass, more preferably 0.1 to 5% by mass, based on the total amount of the resist composition (excluding the solvent).

(G) Carboxylic acid onium salt

The resist composition of the present invention may contain (G) a carboxylic acid onium salt. Examples of the carboxylic acid onium salt include a carboxylic acid sulfonium salt, a carboxylic acid iodonium salt, and a carboxylic acid ammonium salt. Particularly, as the (G) carboxylic acid onium salt, an iodonium salt or a sulfonium salt is preferable. It is also preferable that the carboxylate residue of the (G) carboxylic acid onium salt does not contain an aromatic group or a carbon-carbon double bond. As a particularly preferable anion moiety, a linear, branched or cyclic (monocyclic or polycyclic) alkylcarboxylic acid anion having 1 to 30 carbon atoms is preferable. More preferably an anion of a carboxylic acid in which a part or all of these alkyl groups are fluorine-substituted. The alkyl chain may contain an oxygen atom. As a result, transparency to light of 220 nm or less is ensured, sensitivity and resolving power are improved, density dependency and exposure margin are improved.

Examples of the anion of the fluorine-substituted carboxylic acid include fluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, pentafluoropropionic acid, heptafluorobutyric acid, nonafluoropentanoic acid, perfluorododecanoic acid, perfluorotridecane Acid, perfluorocyclohexanecarboxylic acid, and an anion of 2,2-bistrifluoromethylpropionic acid.

These (G) carboxylic acid onium salts can be synthesized by reacting sulfonium hydroxide, iodonium hydroxide, ammonium hydroxide and carboxylic acid with oxidation in a suitable solvent.

The content of the (G) carboxylic acid onium salt in the composition is generally from 0.1 to 20 mass%, preferably from 0.5 to 10 mass%, and more preferably from 1 to 7 mass%, based on the total solid content of the resist composition.

(H) Other additives

In the resist composition of the present invention, a compound capable of promoting solubility in a dye, a plasticizer, a photosensitizer, a light absorbent, an alkali-soluble resin, a dissolution inhibitor and a developer (for example, a phenol compound having a molecular weight of 1000 or less, An alicyclic group having a group or an aliphatic compound), and the like.

Such phenolic compounds having a molecular weight of 1000 or less can be obtained by the method described in, for example, JP-A-4-122938, JP-A-2-28531, 4,916,210, and 219294 And can be easily synthesized by those skilled in the art.

Specific examples of alicyclic or aliphatic compounds having a carboxyl group include carboxylic acid derivatives having a steroid structure such as cholic acid, deoxycholic acid and lithocholic acid, adamanthanecarboxylic acid derivatives, adamantanedicarboxylic acid, cyclohexanecarboxylic acid, cyclohexanecarboxylic acid, Dicarboxylic acid, and the like, but are not limited thereto.

[Composition for forming an upper layer film (top coat composition)]

Next, an upper layer film forming composition (top coat composition) for forming an upper layer film (top coat) used in the pattern forming method of the present invention will be described.

In the pattern formation method of the present invention, when the liquid immersion exposure is performed, the topcoat is formed to prevent direct contact of the immersion liquid with the resist film, so that penetration of the immersion liquid into the resist film and immersion of the immersion liquid The deterioration of the resist performance due to the elution into the immersion liquid can be suppressed, and further, the effect of preventing the lens contamination of the exposure apparatus by the eluted component in the immersion liquid can be expected.

The topcoat composition used in the pattern forming method of the present invention is preferably a composition containing a resin (X) and a solvent described below in order to uniformly form on the resist film.

<Solvent>

In order to form a good pattern without dissolving the resist film, the topcoat composition according to the present invention preferably contains a solvent which does not dissolve the resist film, more preferably a solvent different from the organic developer.

From the viewpoint of preventing elution into an immersion liquid, it is preferable that the solubility in an immersion liquid is low, and it is more preferable that the solubility in water is low. In the present specification, "low solubility in an immersion liquid" means that the immersion liquid is insoluble. Likewise, "low solubility in water" means water insoluble. From the viewpoint of volatility and coatability, the boiling point of the solvent is preferably 90 占 폚 to 200 占 폚.

For example, when the topcoat composition is coated on a silicon wafer and dried to form a film, the film is dipped in purified water at 23 占 폚 for 10 minutes, and the film thickness after drying Of the initial film thickness is within 3% of the initial film thickness (typically 50 nm).

In the present invention, from the viewpoint of uniformly applying the topcoat, a solvent is used so as to have a solid concentration of 0.01 to 20 mass%, more preferably 0.1 to 15 mass%, and most preferably 1 to 10 mass%.

The solvent that can be used is not particularly limited as long as the resin (X) described below is dissolved and the resist film is not dissolved. For example, an alcohol solvent, an ether solvent, an ester solvent, a fluorine solvent, , And it is more preferable to use a non-fluorine-based alcohol solvent. This further improves the non-solubility of the resist film, and when the top coat composition is applied on the resist film, the top coat can be formed more uniformly without dissolving the resist film. The viscosity of the solvent is preferably 5 cP (centipoise) or less, more preferably 3 cP or less, more preferably 2 cP or less, and particularly preferably 1 cP or less. In addition, Centipoise to Pascal can be converted into the following formula. 1000 cP = 1 Pa · s

The alcoholic solvent is preferably a monohydric alcohol, more preferably a monohydric alcohol having 4 to 8 carbon atoms, from the viewpoint of coating properties. As the monohydric alcohol having 4 to 8 carbon atoms, straight chain, branched, or cyclic alcohols can be used, and linear or branched alcohols are preferred. Examples of such alcoholic solvents include 1-butanol, 2-butanol, 3-methyl-1-butanol, 4-methyl-1-pentanol, propanol, 1-pentanol, 1-heptanol, 1-octanol, 2-hexanol, 2-heptanol, 2-octanol, 3-hexanol , 3-heptanol, 3-octanol, 4-octanol and the like; Glycols such as ethylene glycol, propylene glycol, diethylene glycol, and triethylene glycol; Glycols such as ethylene glycol monomethyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monoethyl ether, and methoxymethyl butanol. ; Among them, alcohols and glycol ethers are preferred, and 1-butanol, 1-hexanol, 1-pentanol, 3-methyl- Pentanol, 4-methyl-2-pentanol and propylene glycol monomethyl ether are more preferable.

Examples of the ether-based solvent include the above glycol ether type solvents, for example, dioxane, tetrahydrofuran, isoamylether, and the like. Of the ester type solvents, ether type solvents having a branched structure are preferable.

Examples of the ester type solvent include methyl acetate, ethyl acetate, isopropyl acetate, butyl acetate (n-butyl acetate), pentyl acetate, hexyl acetate, isoamyl acetate, butyl propionate (n-butyl propionate) Propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether acetate, ethyl-3 3-methoxybutylacetate, methyl formate, ethyl formate, butyl formate, propyl formate, ethyl lactate, butyl lactate, propyl lactate, 2-hydroxy-3-methoxybutyl acetate, Isobutyrate methyl, isobutyrate isobutyl, and propionate butyl. Among ester-based solvents, ester-based solvents having a branched structure are preferable.

Examples of the fluorine-based solvent include 2,2,3,3,4,4-hexafluoro-1-butanol, 2,2,3,3,4,4,5,5-octafluoro-1- Pentanol, 2,2,3,3,4,4,5,5,6,6-decafluoro-1-hexanol, 2,2,3,3,4,4-hexafluoro-1, Pentanediol, 2,2,3,3,4,4,5,5-octafluoro-1,6-hexanediol, 2,2,3,3,4,4,5, 5,6,6,7,7-dodecafluoro-1,8-octanediol, 2-fluoroanisole, 2,3-difluoroanisole, perfluorohexane, perfluoro Heptane, perfluoro-2-pentanone, perfluoro-2-butyltetrahydrofuran, perfluorotetrahydrofuran, perfluorotributylamine, and perfluorotetrapentylamine. Of these, fluorinated alcohol or fluorinated hydrocarbon solvents can be suitably used.

Examples of the hydrocarbon hydrocarbon solvents include aromatic hydrocarbon solvents such as toluene, xylene and anisole; heptane, n-heptene, n-nonene, n-octane, n-decane, 2-methylheptane, 3-methylheptane, Aliphatic hydrocarbon solvents such as tetrahydrofuran; And the like.

These solvents may be used singly or in combination.

The topcoat composition may contain a solvent other than the above. The solubility in the resist film, the solubility of the resin in the topcoat composition, the dissolution characteristics from the resist film, and the like can be suitably adjusted by mixing a solvent other than the above.

&Lt; Resin (X) >

Since the resin (X) in the topcoat composition reaches the resist film through the topcoat at the time of exposure, it is preferable that the resin (X) is transparent in the exposure light source to be used. When used for ArF liquid immersion lithography, the resin preferably has no aromatic group in terms of transparency to ArF light.

The resin (X) preferably has at least one of "fluorine atom", "silicon atom" and "CH ₃ partial structure contained in the side chain part of the resin", and more preferably two or more kinds thereof . Further, a water-insoluble resin (hydrophobic resin) is preferable.

When the resin (X) has a fluorine atom and / or a silicon atom, the fluorine atom and / or the silicon atom may be contained in the main chain of the resin (X) or may be substituted into the side chain.

When the resin (X) has a fluorine atom, it is preferably a resin having an alkyl group having a fluorine atom, a cycloalkyl group having a fluorine atom, or an aryl group having a fluorine atom as a partial structure having a fluorine atom.

The alkyl group having a fluorine atom (preferably having 1 to 10 carbon atoms, more preferably 1 to 4 carbon atoms) is a straight chain or branched alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, and may further have another substituent.

The cycloalkyl group having a fluorine atom is a monocyclic or polycyclic cycloalkyl group in which at least one hydrogen atom is substituted with a fluorine atom and may further have another substituent.

Examples of the aryl group having a fluorine atom include those in which at least one hydrogen atom in an aryl group such as a phenyl group or a naphthyl group is substituted with a fluorine atom and may further have another substituent.

Specific examples of the alkyl group having a fluorine atom, the cycloalkyl group having a fluorine atom, or the aryl group having a fluorine atom are shown below, but the present invention is not limited thereto.

(25)

Among the general formulas (F2) to (F3)

R ₅₇ to R ₆₄ each independently represent a hydrogen atom, a fluorine atom or an alkyl group. Provided that at least one of R ₅₇ to R ₆₁ and R ₆₂ to R ₆₄ represents a fluorine atom or an alkyl group (preferably having 1 to 4 carbon atoms) in which at least one hydrogen atom has been substituted with a fluorine atom. It is preferable that all of R ₅₇ to R ₆₁ are fluorine atoms. R ₆₂ and R ₆₃ are preferably an alkyl group (preferably having 1 to 4 carbon atoms) in which at least one hydrogen atom is substituted with a fluorine atom, and more preferably a perfluoroalkyl group having 1 to 4 carbon atoms. R ₆₂ and R ₆₃ may be connected to each other to form a ring.

Specific examples of the group represented by the general formula (F2) include a p-fluorophenyl group, a pentafluorophenyl group, and a 3,5-di (trifluoromethyl) phenyl group.

Specific examples of the group represented by the general formula (F3) include a trifluoroethyl group, a pentafluoropropyl group, a pentafluoroethyl group, a heptafluorobutyl group, a hexafluoroisopropyl group, a heptafluoroisopropyl group, a hexafluoro (2-methyl) isopropyl group, nonafluorobutyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group , A perfluoro (trimethyl) hexyl group, a 2,2,3,3-tetrafluorocyclobutyl group, and a perfluorocyclohexyl group. A hexafluoroisopropyl group, a heptafluoroisopropyl group, a hexafluoro (2-methyl) isopropyl group, an octafluoroisobutyl group, a nonafluoro-t-butyl group and a perfluoroisopentyl group are preferable , A hexafluoroisopropyl group, and a heptafluoroisopropyl group are more preferable.

When the resin (X) has a silicon atom, it is preferably a resin having an alkylsilyl structure (preferably a trialkylsilyl group) or a cyclic siloxane structure as a partial structure having a silicon atom.

Examples of the resin (X) include resins having at least one kind selected from the group of repeating units represented by the following formulas (C-I) to (C-V).

(26)

Among the general formulas (C-I) to (C-V)

R ₁ to R ₃ each independently represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.

W ₁ to W ₂ each represent an organic group having at least any one of a fluorine atom and a silicon atom.

R ₄ to R ₇ each independently represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms. Provided that at least one of R ₄ to R ₇ represents a fluorine atom. R ₄ and R ₅ or R ₆ and R ₇ may form a ring.

R ₈ represents a hydrogen atom or a linear or branched alkyl group having 1 to 4 carbon atoms.

R ₉ represents a linear or branched alkyl group having 1 to 4 carbon atoms or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.

L ₁ to L _{2 each} represent a single bond or a divalent linking group, and are the same as L ₃ to L ₅ .

Q represents a monocyclic or polycyclic aliphatic group. That is, an atomic group containing two bonded carbon atoms (C-C) and forming an alicyclic structure.

R ₃₀ and R ₃₁ each independently represent hydrogen or a fluorine atom.

R ₃₂ and R ₃₃ each independently represent an alkyl group, a cycloalkyl group, a fluorinated alkyl group or a fluorinated cycloalkyl group.

However, the repeating unit represented by the general formula (CV) has at least one fluorine atom in at least one of R ₃₀ , R ₃₁ , R ₃₂ and R ₃₃ .

The resin (X) preferably has a repeating unit represented by the general formula (C-I), more preferably a repeating unit represented by the following general formulas (C-Ia) to (C-Id).

(27)

In the general formulas (C-Ia) to (C-Id)

R ₁₀ and R _{11 each} represent a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a linear or branched fluorinated alkyl group having 1 to 4 carbon atoms.

W ₃ to W ₆ each represent an organic group having at least one of a fluorine atom and a silicon atom.

When W ₁ to W ₆ are an organic group having a fluorine atom, a fluorinated, straight-chain, branched alkyl group or cycloalkyl group having 1 to 20 carbon atoms or a fluorinated straight-chain, branched or cyclic alkyl ether group having 1 to 20 carbon atoms .

Examples of the fluorinated alkyl group of W ₁ to W ₆ include a trifluoroethyl group, a pentafluoropropyl group, a hexafluoroisopropyl group, a hexafluoro (2-methyl) isopropyl group, a heptafluorobutyl group, Propyl group, propyl group, octafluoroisobutyl group, nonafluorohexyl group, nonafluoro-t-butyl group, perfluoroisopentyl group, perfluorooctyl group, perfluoro (trimethyl) .

Specific examples of the repeating unit represented by formula (CI) are shown below, but the present invention is not limited thereto. X represents a hydrogen atom, -CH ₃ , -F, or -CF ₃ .

(28)

[Chemical Formula 29]

As described above, it is also preferable that the resin (X) contains a CH ₃ partial structure in the side chain portion. The resin (X) preferably contains a repeating unit having at least one CH ₃ partial structure in the side chain portion, more preferably a repeating unit having at least two CH ₃ partial structures in the side chain portion, And a repeating unit having at least three CH ₃ partial structures in its part.

Here, to the resin (X) CH ₃ having a partial structure of side chain portions (hereinafter also referred to as simply "the side chain CH ₃ partial structure") are, including CH ₃ partial structure having the ethyl group, a propyl group or the like.

On the other hand, the methyl group (for example, the? -Methyl group of the repeating unit having a methacrylic acid structure) directly bonded to the main chain of the resin (X) has a large effect on the surface unevenness of the resin Is not included in the CH ₃ partial structure in the present invention.

More specifically, when the resin (X) contains a repeating unit derived from a monomer having a polymerizable moiety having a carbon-carbon double bond such as a repeating unit represented by the following formula (M) And R ₁₁ to R ₁₄ are CH ₃ "itself", the CH ₃ is not included in the CH ₃ partial structure of the side chain portion in the present invention.

On the other hand, CH ₃ partial structure exists via any atom from the CC main chain, it is assumed for the CH ₃ a partial structure of the present invention. For example, when R ₁₁ is an ethyl group (CH ₂ CH ₃ ), it is assumed that the CH ₃ partial structure in the present invention has "one".

(30)

In the above general formula (M)

R ₁₁ to R ₁₄ each independently represent a side chain moiety.

Examples of R ₁₁ to R _{14 in the} side chain moiety include a hydrogen atom and a monovalent organic group.

Examples of the monovalent organic group for R ₁₁ to R ₁₄ include an alkyl group, a cycloalkyl group, an aryl group, an alkyloxycarbonyl group, a cycloalkyloxycarbonyl group, an aryloxycarbonyl group, an alkylaminocarbonyl group, a cycloalkylaminocarbonyl group, Carbonyl group and the like, and these groups may further have a substituent.

The resin (X) is preferably a resin having a repeating unit having a CH ₃ partial structure in the side chain portion. The repeating unit represented by the following general formula (II) and the repeating unit represented by the following general formula It is more preferable to have at least one repeating unit (x) among the repeating units appearing. Particularly when KrF, EUV and electron beam (EB) are used as the exposure light source, the resin (X) may suitably contain the repeating unit represented by the general formula (III).

Hereinafter, the repeating unit represented by formula (II) will be described in detail.

(31)

In the general formula (II), X _b1 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, and R ₂ represents an organic group having at least one CH ₃ partial structure.

The alkyl group of X _b1 preferably has 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, and a trifluoromethyl group, preferably a methyl group.

X _b1 is preferably a hydrogen atom or a methyl group.

Examples of R ₂ include an alkyl group, a cycloalkyl group, an alkenyl group, a cycloalkenyl group, an aryl group, and an aralkyl group having at least one CH ₃ partial structure. The above cycloalkyl group, alkenyl group, cycloalkenyl group, aryl group, and aralkyl group may further have an alkyl group as a substituent.

R ₂ is preferably an alkyl group or an alkyl-substituted cycloalkyl group having at least one CH ₃ partial structure.

The organic group which is stable in an acid having at least one CH ₃ partial structure as R ₂ preferably has 2 or more and 10 or less CH ₃ partial structures and more preferably 2 or more and 8 or less.

As the alkyl group having at least one CH ₃ partial structure in R ₂ , an alkyl group having 3 to 20 carbon atoms is preferable. Specific examples of the preferable alkyl groups include isopropyl, isobutyl, t-butyl, 3-pentyl, 2-methyl-3-butyl, 3-hexyl, Dimethyl-4-pentyl group, isooctyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, and 2,3,5,7-tetramethyl-4-heptyl group. More preferred examples thereof include an isobutyl group, a t-butyl group, a 2-methyl-3-butyl group, a 2-methyl-3-pentyl group, Pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, 2,3,5,7-tetra Methyl-4-heptyl group.

The cycloalkyl group having at least one CH ₃ partial structure in R ₂ may be monocyclic or polycyclic. Specifically, a group having a monocycle having 5 or more carbon atoms, a bicyclo, a tricyclo, a tetracyclo structure, or the like can be given. The number of carbon atoms thereof is preferably from 6 to 30, particularly preferably from 7 to 25 carbon atoms. Preferred examples of the cycloalkyl group include an adamantyl group, a noradamantyl group, a decalin residue, a tricyclododecanyl group, a tetracyclododecanyl group, a norbornyl group, a sidolyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, A decanyl group, and a cyclododecanyl group. More preferred examples thereof include an adamantyl group, a norbornyl group, a cyclohexyl group, a cyclopentyl group, a tetracyclododecanyl group and a tricyclodecanyl group. More preferred are a novinyl group, a cyclopentyl group, and a cyclohexyl group.

As the alkenyl group having at least one CH ₃ partial structure in R ₂ , a linear or branched alkenyl group having 1 to 20 carbon atoms is preferable, and an alkenyl group at the branch is more preferable.

The aryl group having at least one CH ₃ partial structure in R ₂ is preferably an aryl group having 6 to 20 carbon atoms, and examples thereof include a phenyl group and a naphthyl group, preferably a phenyl group.

The aralkyl group having at least one CH ₃ partial structure in R ₂ is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group and a naphthylmethyl group.

Specific examples of the hydrocarbon group having two or more CH ₃ partial structures in R ₂ include isopropyl, isobutyl, t-butyl, 3-pentyl, 2-methyl- , 3-hexyl group, 2,3-dimethyl-2-butyl group, 2-methyl-3-pentyl group, 3- Methylpentyl group, a 2-ethylhexyl group, a 2,6-dimethylheptyl group, a 1,5-dimethyl-3-heptyl group, a 2,3,5,7-tetramethyl Di-tert-butylcyclohexyl group, 4-isopropylcyclohexyl group, 4-t-butylcyclohexyl group, isobornyl group, . More preferred examples include isobutyl, t-butyl, 2-methyl-3-butyl, 2,3-dimethyl-2-butyl, Dimethyl-4-pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5- Dimethyl cyclohexyl group, 3,5-ditert-butylcyclohexyl group, 4-isopropylcyclohexyl group, 4-isopropyl cyclohexyl group, -t-butylcyclohexyl group, and isobonyl group.

Preferred specific examples of the repeating unit represented by formula (II) are shown below. Further, the present invention is not limited to this.

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The repeating unit represented by the general formula (II) is preferably a stable (non-acid-decomposable) repeating unit in the acid, and more specifically, a repeating unit having no group capable of generating a polar group (alkali- It is preferably a repeating unit.

Hereinafter, the repeating unit represented by the general formula (III) will be described in detail.

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In the general formula (III), X _b2 represents a hydrogen atom, an alkyl group, a cyano group or a halogen atom, R ₃ represents an organic group stable to an acid having at least one CH ₃ partial structure, and n represents 1 Represents an integer of 5.

The alkyl group of X _b2 preferably has 1 to 4 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, a hydroxymethyl group, and a trifluoromethyl group, preferably a hydrogen atom.

X _b2 is preferably a hydrogen atom.

It is preferable that R ₃ is an organic group which is decomposed by the action of an acid and does not have a group capable of generating a polar group (alkali-soluble group) because it is a stable organic group with respect to an acid.

As R ₃ , an alkyl group having at least one CH ₃ partial structure can be mentioned.

The organic group which is stable in an acid having at least one CH ₃ partial structure as R ₃ preferably has 1 to 10 or less CH ₃ partial structures, more preferably 1 to 8, and more preferably 1 to 4 Or less.

As the alkyl group having at least one CH ₃ partial structure in R ₃ , an alkyl group having 3 to 20 carbon atoms is preferable. Specific examples of the preferable alkyl groups include isopropyl, isobutyl, t-butyl, 3-pentyl, 2-methyl-3-butyl, 3-hexyl, Dimethyl-4-pentyl group, isooctyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, and 2,3,5,7-tetramethyl-4-heptyl group. More preferred examples thereof include an isobutyl group, a t-butyl group, a 2-methyl-3-butyl group, a 2-methyl-3-pentyl group, Pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, 2,3,5,7-tetra Methyl-4-heptyl group.

Specific examples of the alkyl group having at least two CH ₃ partial structures in R ₃ include isopropyl, isobutyl, t-butyl, 3-pentyl, 2,3-dimethylbutyl, 2 Methyl-3-pentyl group, 3-methyl-4-hexyl group, 3,5-dimethyl-4-pentyl group, isooctyl group, 2,4 , 4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl-3-heptyl group, 2,3,5,7-tetramethyl- And the like. More preferably 5 to 20 carbon atoms, and still more preferably an isopropyl group, a t-butyl group, a 2-methyl-3-butyl group, a 2-methyl- Dimethyl-4-pentyl group, 2,4,4-trimethylpentyl group, 2-ethylhexyl group, 2,6-dimethylheptyl group, 1,5-dimethyl- , 2,3,5,7-tetramethyl-4-heptyl group, 2,6-dimethylheptyl group.

n represents an integer of 1 to 5, more preferably an integer of 1 to 3, and more preferably 1 or 2.

Preferable specific examples of the repeating unit represented by the formula (III) are shown below. Further, the present invention is not limited to this.

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The repeating unit represented by the general formula (III) is preferably a stable (non-acid-decomposable) repeating unit in the acid, and specifically includes repeating units having no groups which are decomposed by the action of an acid to generate a polar group (alkali- Unit.

In the case where the resin (X) contains a CH ₃ partial structure in the side chain portion and in the case of not having a fluorine atom and a silicon atom, the repeating unit represented by the general formula (II) and the repeating unit represented by the general formula (III) The content of the at least one repeating unit (x) in the units may be, for example, 20 mol% or more, preferably 30 mol% or more, more preferably 90 mol% or more , And more preferably 95 mol% or more. The upper limit is not particularly limited and may be, for example, 100 mol% or less.

The resin (X) may contain a repeating unit (d) derived from a monomer having an alkali-soluble group. As a result, the solubility in an immersion liquid and the solubility in a coating solvent can be controlled. Examples of the alkali-soluble group include a phenolic hydroxyl group, a carboxylic acid group, a fluorinated alcohol group, a sulfonic acid group, a sulfonamide group, a sulfonylimide group, (alkylsulfonyl) (alkylcarbonyl) methylene group, (alkylsulfonyl) (Alkylcarbonyl) methylene group, a bis (alkylcarbonyl) imide group, a bis (alkylsulfonyl) methylene group, a bis (alkylsulfonyl) imide group, And a group having a tris (alkylsulfonyl) methylene group.

The monomer having an alkali-soluble group is preferably a monomer having an acid dissociation constant pKa of 4 or more, more preferably a monomer having a pKa of 4 to 13, and most preferably a monomer having a pKa of 8 to 13. By containing a monomer having a pKa of 4 or more, swelling of the negative type and the positive type at the time of development is suppressed, and not only good developing performance for an organic developing solution but also good developing property can be obtained even when an alkaline developing solution is used.

The acid dissociation constant pKa in the present specification indicates the value obtained by calculation using the software package 1 (described later) in detail, which will be described later.

The monomer having a pKa of 4 or more is not particularly limited and includes, for example, monomers having an acid group (alkali-soluble group) such as a phenolic hydroxyl group, a sulfonamido group, -COCH ₂ CO-, a fluoroalcohol group, . In particular, monomers containing a fluoroalcohol group are preferred. The fluoroalcohol group is a fluoroalkyl group substituted with at least one hydroxyl group, preferably having 1 to 10 carbon atoms, more preferably 1 to 5 carbon atoms. Specific examples of the fluoroalcohol group include -CF ₂ OH, -CH ₂ CF ₂ OH, -CH ₂ CF ₂ CF ₂ OH, -C (CF ₃ ) ₂ OH, -CF ₂ CF (CF ₃ ) OH , -CH ₂ C (CF ₃ ) ₂ OH, and the like. Particularly preferred as the fluoroalcohol group is the hexafluoroisopropanol group.

The total amount of the repeating units derived from the monomer having an alkali-soluble group in the resin (X) is preferably from 0 to 90 mol%, more preferably from 0 to 80 mol%, based on all repeating units constituting the resin (X) %, Still more preferably from 0 to 70 mol%.

The monomer having an alkali-soluble group may contain only one acid group or two or more acid groups. The repeating unit derived from this monomer preferably has two or more acid groups per repeating unit, more preferably has 2 to 5 acid groups, and particularly preferably has 2 to 3 acid groups.

Specific examples of the repeating unit derived from a monomer having an alkali-soluble group include the examples described in paragraphs <0278> to <0287> of Japanese Laid-Open Patent Publication No. 2008-309878, but are not limited thereto.

As the resin (X), any of the resins selected from (X-1) to (X-8) described in paragraph <0288> of Japanese Laid-Open Patent Publication No. 2008-309878 can be mentioned as one of preferable embodiments.

The resin (X) is preferably a solid at room temperature (25 캜). The glass transition temperature (Tg) is preferably at least 50 ° C, more preferably at least 70 ° C, and even more preferably at least 80 ° C.

The upper limit of the Tg of the resin (X) is preferably 250 deg. C or lower, for example.

The resin (X) preferably has a repeating unit having a monocyclic or polycyclic cycloalkyl group. The monocyclic or polycyclic cycloalkyl group may be contained in any of the main chain and the side chain of the repeating unit. More preferably, a repeating unit having both a monocyclic or polycyclic cycloalkyl group and a CH ₃ partial structure, and a repeating unit having both a cyclic or polycyclic cycloalkyl group and a CH ₃ partial structure in the side chain is More preferable.

The term "solid at 25 ° C" means that the melting point is 25 ° C or higher.

The glass transition temperature (Tg) can be measured by a differential scanning calorimeter. For example, the glass transition temperature (Tg) can be measured by, for example, increasing the temperature of the sample once, The cost can be measured by interpreting the changed value.

The resin (X) is preferably insoluble in an immersion liquid (preferably water) and soluble in an organic developer. From the viewpoint that development can be peeled off using an alkali developer, it is preferable that the resin (X) is also usable for an alkali developing solution.

When the resin (X) has a silicon atom, the content of the silicon atom is preferably 2 to 50 mass%, more preferably 2 to 30 mass%, based on the molecular weight of the resin (X). The repeating unit containing a silicon atom is preferably 10 to 100% by mass, more preferably 20 to 100% by mass in the resin (X).

When the resin (X) has a fluorine atom, the fluorine atom content is preferably 5 to 80 mass%, more preferably 10 to 80 mass%, with respect to the molecular weight of the resin (X). The repeating unit containing a fluorine atom is preferably 10 to 100% by mass, more preferably 30 to 100% by mass in the resin (X).

On the other hand, in the case where the resin (X) contains a CH ₃ partial structure in the side chain portion, a form in which the resin (X) contains substantially no fluorine atom is also preferable. In this case, specifically, Is preferably 0 to 20 mol%, more preferably 0 to 10 mol%, still more preferably 0 to 5 mol%, and most preferably 0 to 3 mol%, based on the total repeating units in the resin (X) Mol% is particularly preferable, and ideally 0 mol%, that is, does not contain a fluorine atom.

It is preferable that the resin (X) is composed substantially only of a repeating unit composed only of atoms selected from a carbon atom, an oxygen atom, a hydrogen atom, a nitrogen atom and a sulfur atom. More specifically, it is preferable that the repeating unit constituted only by an atom selected from a carbon atom, an oxygen atom, a hydrogen atom, a nitrogen atom and a sulfur atom accounts for 95 mol% or more of the total repeating units of the resin (X) More preferably 99 mol% or more, and ideally 100 mol%.

The weight average molecular weight of the resin (X) in terms of standard polystyrene is preferably 1,000 to 100,000, more preferably 1,000 to 50,000, still more preferably 2,000 to 15,000, and particularly preferably 3,000 to 15,000.

The amount of residual monomer is preferably from 0 to 10 mass%, more preferably from 0 to 5 mass%, from the viewpoint of reducing the amount of impurities such as metals, as well as the elution reduction from the top coat to the immersion liquid, , And more preferably 0 to 1 mass%. The molecular weight distribution (hereinafter also referred to as "Mw / Mn" and "degree of dispersion") is preferably from 1 to 5, more preferably from 1 to 3, still more preferably from 1 to 1.5.

As the resin (X), various commercially available products can be used, and the resin (X) can be synthesized by a usual method (for example, radical polymerization). Examples of the general synthesis method include a batch polymerization method in which a monomer species and an initiator are dissolved in a solvent and heated to effect polymerization, a drop polymerization method in which a solution of a monomer species and an initiator is added dropwise to a heating solvent for 1 to 10 hours, And a dropwise polymerization method is preferable. Examples of the reaction solvent include ethers such as tetrahydrofuran, 1,4-dioxane and diisopropyl ether; Ketones such as methyl ethyl ketone and methyl isobutyl ketone; An ester solvent such as ethyl acetate; Amide solvents such as dimethylformamide and dimethylacetamide; A solvent for dissolving the resist composition of the present invention such as propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and cyclohexanone; And the like.

The polymerization reaction is preferably carried out in an inert gas atmosphere such as nitrogen or argon. As the polymerization initiator, polymerization is initiated by using a commercially available radical initiator (azo type initiator, peroxide, etc.). As the radical initiator, azo-based initiators are preferable, and azo-based initiators having an ester group, a cyano group, and a carboxyl group are more preferable. Preferred initiators include azobisisobutyronitrile, azobisdimethylvaleronitrile, and dimethyl 2,2'-azobis (2-methylpropionate). If necessary, a chain transfer agent may be used. The concentration of the reactant is usually 5 to 50 mass%, preferably 20 to 50 mass%, and more preferably 30 to 50 mass%. The reaction temperature is usually from 10 to 150 캜, preferably from 30 to 120 캜, more preferably from 60 to 100 캜.

After completion of the reaction, the reaction mixture is cooled to room temperature and purified. The purification may be carried out, for example, by liquid-liquid extraction, in which residual monomer or oligomer component is removed by combining several solvents or appropriate solvents; A purification method in a solution state such as ultrafiltration in which only a substance having a specific molecular weight or less is extracted and removed; A repulping method in which the residual monomer or the like is removed by dropping the resin solution into a poor solvent to solidify the resin in a poor solvent; A method of purification in a solid state such as washing the resin slurry separated by filtration with a poor solvent; And the like can be applied. For example, the resin is brought into contact with a poorly soluble or insoluble solvent (poor solvent) at a volume of 10 times or less, preferably 10 to 5 times the volume of the reaction solution, to precipitate the resin as a solid .

The solvent (precipitation or re-precipitation solvent) used in the precipitation or reprecipitation operation from the polymer solution may be a poor solvent of the polymer. Depending on the kind of the polymer, for example, hydrocarbons (pentane, hexane, heptane Aliphatic hydrocarbons such as octane and octane; alicyclic hydrocarbons such as cyclohexane and methylcyclohexane; aromatic hydrocarbons such as benzene, toluene and xylene), halogenated hydrocarbons (such as methylene chloride, chloroform, Halogenated aromatic hydrocarbons such as chlorobenzene and dichlorobenzene), nitro compounds (such as nitromethane and nitroethane), nitriles (such as acetonitrile, benzo Nitrile and the like), ethers (cyclic ethers such as diethyl ether, diisopropyl ether and dimethoxyethane, cyclic ethers such as tetrahydrofuran and dioxane), ketones (acetone, methyl Ketones, diisobutyl ketone, etc.), esters (ethyl acetate, butyl acetate and the like), carbonates (dimethyl carbonate, diethyl carbonate, ethylene carbonate and propylene carbonate), alcohols (methanol, ethanol, propanol, isopropyl alcohol, Ethanol, etc.), carboxylic acids (such as acetic acid), water, mixed solvents containing these solvents, and the like. Among them, as the solvent for precipitation or reprecipitation, at least an alcohol (particularly, methanol or the like) or a solvent containing water is preferable. In such a solvent containing at least hydrocarbon, the ratio of the alcohol (particularly, methanol etc.) to another solvent (for example, an ester such as ethyl acetate, an ether such as tetrahydrofuran, etc.) (Volume ratio: 25 캜) = 10/90 to 99/1, preferably electrons / latter (volume ratio; 25 캜) = 30/70 to 98/2, more preferably electrons / latter ) = 50/50 to 97/3.

The amount of the precipitation or reprecipitation solvent to be used may be appropriately selected in consideration of the efficiency and the yield. Generally, 100 to 10000 parts by mass, preferably 200 to 2000 parts by mass, Is from 300 to 1000 parts by mass.

The diameter of the opening of the nozzle when supplying the polymer solution to the precipitation or reprecipitation solvent (poor solvent) is preferably 4 mm or less (for example, 0.2 to 4 mm?). The feed rate (dropping rate) of the polymer solution into the poor solvent is, for example, about 0.1 to 10 m / sec, preferably about 0.3 to 5 m / sec, as the linear velocity.

The precipitation or reprecipitation operation is preferably carried out under stirring. As stirring blades used for stirring, for example, a disk turbine, a fan turbine (including puddles), a curved blade turbine, an arrow wing turbine, a pauldler type, a bull margin type, an angled vane fan fan turbine, propeller, multistage, anchor (or horseshoe), gate, double ribbon, screw and the like. Stirring is preferably carried out for at least 10 minutes, more preferably at least 20 minutes, after completion of the supply of the polymer solution. When the stirring time is short, the monomer content in the polymer particles may not be sufficiently reduced. The polymer solution and the poor solvent may be mixed and stirred using a line mixer instead of the stirring wing.

The temperature for precipitation or reprecipitation may be suitably selected in consideration of efficiency and operability, and is usually about 0 to 50 캜, preferably about room temperature (for example, about 20 to 35 캜). The precipitation or reprecipitation operation can be carried out by a known method such as a batch method or a continuous method using a conventional mixing vessel such as a stirring tank.

The particulate polymer precipitated or reprecipitated is usually subjected to conventional solid-liquid separation such as filtration and centrifugation, and is then used for drying. The filtration is preferably carried out under pressure using a solvent-resistant filter medium. The drying is carried out at normal pressure or reduced pressure (preferably under reduced pressure) at a temperature of about 30 to 100 캜, preferably about 30 to 50 캜.

Alternatively, the resin may be once separated and precipitated and then dissolved in a solvent, and the resin may be contacted with a solvent which is poorly soluble or insoluble.

That is, after completion of the radical polymerization reaction, the polymer is contacted with a poorly soluble or insoluble solvent to precipitate the resin (step a), separate the resin from the solution (step b) (Step c). Thereafter, the resin solution A is added to the resin solution A in a volume amount (preferably 5 times or less in volume) less than 10 times of the resin solution A, (Step d), and separating the precipitated resin (step e).

The solvent used for preparing the resin solution A may be the same solvent as the solvent for dissolving the monomer during the polymerization reaction and may be the same as or different from the solvent used in the polymerization reaction.

The resin (X) may be used singly or in combination.

The blending amount of the resin (X) in the whole topcoat composition is preferably 50 to 99.9 mass%, more preferably 60 to 99.0 mass%, of the total solid content.

Hereinafter, preferred examples of the resin (X) are shown, but the present invention is not limited thereto.

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&Lt; Additive (A) >

The topcoat composition preferably contains at least one kind selected from the group consisting of (A1), (A2) and (A3) (hereinafter also referred to as "additive (A)" or " desirable.

(A1) a basic compound or a base generator

(A2) a compound containing at least one bond or group selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond

(A3) onium salt

Since the topcoat composition contains the additive (A), the effect of the present invention is more excellent. This is because diffusion of the acid in the resist film is promoted in the case of containing the above-mentioned (A2), and excessive diffusion of acid in the resist film is suppressed in the case of containing (A1) or (A3) , But the present invention is not limited to this mechanism.

Among the above-mentioned (A1) to (A3), the above-mentioned (A2) is more preferable because the effect of the present invention is more excellent.

The content of the above-mentioned (A1) to (A3) is as described later, but is preferably 1 to 25% by mass, more preferably 2.5 to 20% by mass based on the total solid content of the topcoat composition, % By mass is more preferable.

<(A1) Basic compound and base generator>

The topcoat composition preferably contains a basic compound or a base generator (hereinafter sometimes referred to as "compound (A1)" or "additive (A1)"). These additives act as a solvent for trapping the acid generated from the photoacid generator, so that the effect of the present invention is more excellent.

(Basic compound)

The basic compound that the top coat composition may contain is preferably an organic basic compound, more preferably a nitrogen-containing basic compound. For example, those described as basic compounds that may be contained in the resist composition of the present invention may be used. Specifically, compounds having a structure represented by the above formulas (A) to (E) are suitably used.

In addition, for example, the following compounds (1) to (5) and (7) can be used.

(1) a compound represented by the general formula (BS-1)

[Chemical Formula 39]

In the general formula (BS-1)

Each R independently represents a hydrogen atom or an organic group. Provided that at least one of the three Rs is an organic group. The organic group is a linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, an aryl group or an aralkyl group.

The number of carbon atoms of the alkyl group as R is not particularly limited, but is usually 1 to 20, preferably 1 to 12.

The number of carbon atoms of the cycloalkyl group as R is not particularly limited, but is usually 3 to 20, preferably 5 to 15.

The carbon number of the aryl group as R is not particularly limited, but is usually 6 to 20, preferably 6 to 10. Specific examples thereof include a phenyl group and a naphthyl group.

The carbon number of the aralkyl group as R is not particularly limited, but is usually 7 to 20, preferably 7 to 11. Specific examples thereof include a benzyl group and the like.

The alkyl group, cycloalkyl group, aryl group and aralkyl group as R may have a hydrogen atom substituted by a substituent. Examples of the substituent include an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, a hydroxyl group, a carboxy group, an alkoxy group, an aryloxy group, an alkylcarbonyloxy group and an alkyloxycarbonyl group.

In the compound represented by formula (BS-1), it is preferable that at least two of R groups are organic groups.

Specific examples of the compound represented by the general formula (BS-1) include tri-n-butylamine, tri-isopropylamine, tri-n-pentylamine, tri-n-octylamine, tri- There may be mentioned amine compounds such as isodecylamine, dicyclohexylmethylamine, tetradecylamine, pentadecylamine, hexadecylamine, octadecylamine, didecylamine, methyloctadecylamine, dimethylundecylamine, N, , Methyl dioctadecylamine, N, N-dibutylaniline, N, N-dicyclohexylamine, 2,6-diisopropylaniline and 2,4,6-tri (t-butyl) aniline .

As preferable basic compounds represented by the general formula (BS-1), at least one R is an alkyl group substituted with a hydroxy group. Specific examples thereof include triethanolamine and N, N-dihydroxyethylaniline.

The alkyl group as R may have an oxygen atom in the alkyl chain. That is, an oxyalkylene chain may be formed. As the oxyalkylene chain, -CH ₂ CH ₂ O- is preferable. Specifically, for example, tris (methoxyethoxyethyl) amine and compounds exemplified on the 60th line and after in column 3 of US 6040112 are listed.

Examples of the basic compound represented by the general formula (BS-1) include the followings.

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(2) A compound having a nitrogen-containing heterocyclic structure

The nitrogen-containing heterocycle may have aromaticity or may not have aromaticity. In addition, a plurality of nitrogen atoms may be contained. It may contain a hetero atom other than nitrogen. Specifically, for example, a compound having an imidazole structure (2-phenylbenzimidazole, 2,4,5-triphenylimidazole or the like), a compound having a piperidine structure [N-hydroxyethylpiperidine (4-dimethylaminopyridine and the like) having a pyridine structure and a compound having an antipyrine structure (for example, Antipyrine, and hydroxy antipyrine).

A compound having two or more ring structures is also suitably used. Specific examples thereof include 1,5-diazabicyclo [4.3.0] nor-5-ene and 1,8-diazabicyclo [5.4.0] undec-7-ene.

(3) An amine compound having a phenoxy group

An amine compound having a phenoxy group is a compound having an phenoxy group at the terminal on the opposite side to the N atom of the alkyl group contained in the amine compound. Examples of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxy group, a carboxylic acid ester group, a sulfonic acid ester group, an aryl group, an aralkyl group, May have a substituent of

More preferably, the compound has at least one oxyalkylene chain between the phenoxy group and the nitrogen atom. The number of oxyalkylene chains in one molecule is preferably 3 to 9, and more preferably 4 to 6. Of the oxyalkylene chains, -CH ₂ CH ₂ O- is particularly preferred.

Specific examples include 2- [2- {2- (2,2-dimethoxy-phenoxyethoxy) ethyl} -bis- (2-methoxyethyl)] amine and US2007 / 0224539A1. (C1-1) to (C3-3) exemplified in &quot;

The amine compound having a phenoxy group can be produced by, for example, heating and reacting a primary or secondary amine having a phenoxy group with a haloalkyl ether, and adding an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide or tetraalkylammonium , Ethyl acetate and chloroform. The amine compound having a phenoxy group can be obtained by heating and reacting a primary or secondary amine and a haloalkyl ether having a phenoxy group at the terminal and then adding an aqueous solution of a strong base such as sodium hydroxide, potassium hydroxide or tetraalkylammonium Followed by extraction with an organic solvent such as ethyl acetate or chloroform.

(4) Ammonium salt

As the basic compound, an ammonium salt can also be suitably used. The anion of the ammonium salt includes, for example, halides, sulfonates, borates and phosphates. Of these, halides and sulfonates are particularly preferred.

As the halide, chloride, bromide and iodide are particularly preferable.

As the sulfonate, an organic sulfonate having 1 to 20 carbon atoms is particularly preferable. Examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates.

The alkyl group contained in the alkyl sulfonate may have a substituent. Examples of the substituent include a fluorine atom, a chlorine atom, a bromine atom, an alkoxy group, an acyl group and an aryl group. Specific examples of the alkyl sulfonate include methanesulfonate, ethanesulfonate, butanesulfonate, hexanesulfonate, octanesulfonate, benzylsulfonate, trifluoromethanesulfonate, pentafluoroethanesulfonate And nonafluorobutane sulfonate.

Examples of the aryl group contained in the aryl sulfonate include a phenyl group, a naphthyl group and an anthryl group. These aryl groups may have a substituent. As the substituent, for example, a straight chain or branched chain alkyl group having 1 to 6 carbon atoms and a cycloalkyl group having 3 to 6 carbon atoms are preferable. Specifically, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl and cyclohexyl groups are preferable. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, a cyano group, a nitro group, an acyl group and an acyloxy group.

The ammonium salt may be a hydroxide or a carboxylate. In this case, the ammonium salt is preferably a tetraalkylammonium hydroxide having 1 to 8 carbon atoms (tetramethylammonium hydroxide and tetraalkylammonium hydroxide such as tetraethylammonium hydroxide and tetra- (n-butyl) ammonium hydroxide) Lockside) is particularly preferable.

Preferable basic compounds include, for example, guanidine, aminopyridine, aminoalkylpyridine, aminopyrrolidine, indazole, imidazole, pyrazole, pyrazine, pyrimidine, purine, imidazoline, pyrazoline, piperazine, Furane and aminoalkyl morpholine. These may further have a substituent.

Preferred examples of the substituent include amino, aminoalkyl, alkylamino, aminoaryl, arylamino, alkyl, alkoxy, acyl, acyloxy, aryl, aryloxy, nitro, hydroxyl and cyano .

Particularly preferred basic compounds are, for example, guanidine, 1,1-dimethyl guanidine, 1,1,3,3-tetramethylguanidine, imidazole, 2-methylimidazole, Methylimidazole, 2-phenylimidazole, 4,5-diphenylimidazole, 2,4,5-triphenylimidazole, 2-aminopyridine, 3-aminopyridine, 4-aminopyridine, 2 Amino-3-methylpyridine, 2-amino-4-methylpyridine, 2-amino-3-methylpyridine, 2- (4-aminoethylpyridine, 3-aminopyrrolidine, piperazine, N- (2-aminoethyl) piperazine, N- Aminoethyl) piperidine, 4-amino-2,2,6,6-tetramethylpiperidine, 4-piperidinopiperidine, 2-iminopiperidine, 1- ) Pyrrolidine, pyrazole, 3-amino-5-methylpyrazole, 5-amino-3- Pyrazine, pyrazine, 2- (aminomethyl) -5-methylpyrazine, pyrimidine, 2,4-diaminopyrimidine, 4,6-dihydroxypyrimidine, 2- 3-pyrazoline, N-aminomorpholine and N- (2-aminoethyl) morpholine.

(5) a compound (PA) that has a proton acceptor functional group and is decomposed by irradiation with an actinic ray or radiation to decrease or disappear the proton acceptor property or to produce a compound that changes from proton acceptor property to acidic property;

The composition according to the present invention is a basic compound which has a proton acceptor functional group and is decomposed by irradiation with an actinic ray or radiation to decrease or disappear the proton acceptor property or to change from a proton acceptor property to an acid (Hereinafter also referred to as &quot; compound (PA) &quot;).

The proton acceptor functional group is a functional group having a group or an electron capable of electrostatically interacting with a proton and includes, for example, a functional group having a macrocyclic structure such as a cyclic polyether, Means a functional group having a nitrogen atom having a non-covalent electron pair. The nitrogen atom having a non-covalent electron pair not contributing to the pi bond is, for example, a nitrogen atom having a partial structure represented by the following general formula.

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Preferable partial structures of the proton acceptor functional groups include, for example, crown ethers, azacrown ethers, primary to tertiary amines, pyridine, imidazole and pyrazine structures.

The compound (PA) is decomposed by irradiation with an actinic ray or radiation to generate a compound in which the proton acceptor property is decreased, disappears, or the proton acceptor property is changed to acidic. Here, the change of the proton acceptor property from the degradation, disappearance, or change from the proton acceptor property to the acid is a change of the proton acceptor property due to the addition of the proton to the proton acceptor functional group. Specifically, Means that the equilibrium constant in chemical equilibrium is reduced when a proton adduct is produced from a compound (PA) having a sceptic functional group and a proton.

The proton acceptor property can be confirmed by performing pH measurement. In the present invention, it is preferable that the acid dissociation constant pKa of the compound generated by decomposition of the compound (PA) by irradiation with an actinic ray or radiation satisfies pKa <-1, more preferably -13 <pKa < 1, and more preferably -13 < pKa < -3.

In the present invention, the acid dissociation constant pKa refers to an acid dissociation constant pKa in an aqueous solution and is described in, for example, Chemical Manual (II) (revised edition 4, 1993, edited by The Japan Chemical Society, Maruzen Co., Ltd.) The lower this value is, the higher the acid strength is. Specifically, the acid dissociation constant pKa in the aqueous solution can be measured by measuring an acid dissociation constant at 25 ° C using an infinitely diluted aqueous solution. Further, using the following software package 1, A value based on the database of document values can be obtained by calculation. The values of pKa described in this specification all show values obtained by calculation using this software package.

Software Package 1: Advanced Chemistry Development (ACD / Labs) Software V8.14 for Solaris (1994-2007 ACD / Labs)

The compound (PA) generates, for example, a compound represented by the following formula (PA-1) as the proton adduct resulting from decomposition by irradiation with an actinic ray or radiation. The compound represented by the general formula (PA-1) has an acidic group together with a proton acceptor functional group, whereby the proton acceptor property is lowered and disappears or the proton acceptor property is changed to acidic as compared with the compound (PA) / RTI &gt;

(43)

In the general formula (PA-1)

Q represents -SO ₃ H, -CO ₂ H, or -X ₁ NHX ₂ Rf. Here, Rf represents an alkyl group, a cycloalkyl group or an aryl group, and each of X ₁ and X ₂ independently represents -SO ₂ - or -CO-.

A represents a single bond or a divalent linking group.

X represents -SO ₂ - or -CO-.

n represents 0 or 1;

B represents a single bond, an oxygen atom or -N (Rx) Ry-. Rx represents a hydrogen atom or a monovalent organic group, and Ry represents a single bond or a divalent organic group. May form a ring by combining with R &lt; h &gt;, or may be bonded to R to form a ring.

R represents a monovalent organic group having a proton acceptor functional group.

Specific examples of the compound (PA) include compounds described in paragraphs <0743> to <0750> of JP-A No. 2013-83966, but are not limited thereto.

In the present invention, a compound (PA) other than the compound which generates the compound represented by the formula (PA-1) may be appropriately selected. For example, as the ionic compound, a compound having a proton acceptor moiety at the cation moiety may be used. More specifically, the compound represented by the following general formula (7) and the like can be given.

(44)

Wherein A represents a sulfur atom or an iodine atom.

m represents 1 or 2, and n represents 1 or 2. When A is a sulfur atom, m + n = 3, and when A is an iodine atom, m + n = 2.

R represents an aryl group.

R _N represents an aryl group substituted with a proton acceptor functional group.

X ^- represents a counter anion.

Specific examples of X ^- include the same ones as Z ^- in the above-mentioned general formula (ZI).

As specific examples of the aryl group of R and R _N , a phenyl group is preferable.

Specific examples of the proton acceptor functional group having R _N are the same as the proton acceptor functional groups described in the above formula (PA-1).

In the composition of the present invention, the blending ratio of the compound (PA) in the whole composition is preferably 0.1 to 10 mass%, more preferably 1 to 8 mass%, of the total solid content.

(7) a low-molecular compound having a nitrogen atom and having a group capable of leaving by the action of an acid

The composition of the present invention may contain a low molecular weight compound having a nitrogen atom and having a group which is cleaved by the action of an acid (hereinafter also referred to as "low molecular weight compound (D)" or "compound (D)"). It is preferable that the low-molecular compound (D) has a basicity after the group which is eliminated by the action of an acid is desorbed.

The group to be cleaved by the action of an acid is not particularly limited, but an acetal group, a carbonate group, a carbamate group, a tertiary ester group, a tertiary hydroxyl group and a hemiaminalde group are preferable, and a carbamate group, It is particularly preferable that the rotor is a rotor.

The molecular weight of the low-molecular compound (D) having a group which is cleaved by the action of an acid is preferably 100 to 1000, more preferably 100 to 700, and particularly preferably 100 to 500.

As the compound (D), an amine derivative having a group which desorbs by the action of an acid on a nitrogen atom is preferable.

The compound (D) may have a carbamate group having a protecting group on the nitrogen atom. The protecting group constituting the carbamate group can be represented by the following general formula (d-1).

[Chemical Formula 45]

In the general formula (d-1)

R 'each independently represents a hydrogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkoxyalkyl group. R 'may be bonded to each other to form a ring.

R 'is preferably a straight chain or branched alkyl group, cycloalkyl group or aryl group. More preferably, it is a straight chain or branched alkyl group or cycloalkyl group.

It is particularly preferable that the compound (D) has a structure represented by the following formula (A).

The compound (D) may be equivalent to the basic compound as long as it is a low-molecular compound having a group capable of leaving by the action of an acid.

(46)

In the general formula (A), R _a represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. When n = 2, the two R _a may be the same or different, and two R _a may combine with each other to form a divalent heterocyclic hydrocarbon group (preferably having a carbon number of 20 or less) or a derivative thereof do.

R _b each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkoxyalkyl group. _{However, -C (R b) (R} b) (R b) in at least one of, the other R _b is a hydrogen atom when at least one R _b is the one-cyclopropyl group, a 1-alkoxyalkyl group or an aryl group to be.

And at least two R _b may combine to form an alicyclic hydrocarbon group, an aromatic hydrocarbon group, a heterocyclic hydrocarbon group or a derivative thereof.

n represents an integer of 0 to 2, m represents an integer of 1 to 3, and n + m = 3.

Specific examples of the particularly preferable compound (D) in the present invention include compounds described in, for example, paragraphs <0786> to <0788> of Japanese Laid-Open Patent Publication No. 2013-83966, but the present invention is not limited thereto.

The compound represented by the general formula (A) can be synthesized on the basis of JP-A-2007-298569, JP-A-2009-199021 and the like.

In the present invention, the low-molecular compound (D) may be used singly or in combination of two or more.

Other compounds that can be used include compounds synthesized in Examples of JP-A No. 2002-363146 and compounds described in paragraph 0108 of JP-A No. 2007-298569.

As the basic compound, a photosensitive basic compound may be used. As the photosensitive basic compound, for example, Japanese Patent Application Laid-Open No. 2003-524799 and J. Photopolym. Sci & Tech. Vol. 8, P. 543-553 (1995), and the like can be used.

As the basic compound, a compound called a photodegradable base may be used. Examples of the photodegradable base include an onium salt of a carboxylic acid and an onium salt of a sulfonic acid in which the alpha -phosphorus is not fluorinated. Specific examples of photodegradable bases include WO 0114 / 133048A1, paragraphs 0145, 2008-158339, and 399146.

(Content of basic compound)

The content of the basic compound in the topcoat composition is preferably 0.01 mass% or more, more preferably 0.1 mass% or more, more preferably 1 mass% or more, and more preferably 2.5 mass% % Or more is particularly preferable.

On the other hand, the upper limit of the content of the basic compound is preferably 25 mass% or less, more preferably 20 mass% or less, more preferably 10 mass% or less, and still more preferably 5 mass% or less based on the solid content of the topcoat composition Is particularly preferable.

(Base generator)

Examples of the base generator (photo-base generator) that can be contained in the topcoat composition include those disclosed in JP-A Nos. 4-151156, 4-162040, 5-197148, 5-5995, 6-194834, 8-146608, 10-83079, and European Patent Publication No. 622682, all of which are incorporated herein by reference.

The compounds described in JP-A-2010-243773 are also suitably used.

Specific examples of the photoacid generators include 2-nitrobenzyl carbamate, 2,5-ditrobenzyl cyclohexyl carbamate, N-cyclohexyl-4-methylphenylsulfonamide and 1,1-di Methyl-2-phenylethyl-N-isopropyl carbamate, but are not limited thereto.

(Content of base generator)

The content of the base generator in the topcoat composition is preferably 0.01% by mass or more, more preferably 0.1% by mass or more, more preferably 1% by mass or more, and still more preferably 2.5% by mass or more based on the solid content of the topcoat composition. By mass or more is particularly preferable.

On the other hand, the upper limit of the content of the base generator is preferably 25 mass% or less, more preferably 20 mass% or less, more preferably 10 mass% or less, and still more preferably 5 mass% or less, based on the solid content of the topcoat composition. Or less is particularly preferable.

<Compounds containing a bond or a group selected from the group consisting of (A2) ether bond, thioether bond, hydroxyl group, thiol group, carbonyl bond and ester bond>

(Hereinafter referred to as "compound (A2)" or "additive (s) ") containing at least one group or bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, A2) ") will be described below.

As described above, the compound (A2) is a compound containing at least one of a group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond.

As described above, the compound (A2) includes at least one group or a bond selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond. In one aspect of the present invention, the compound (A2) preferably has two or more groups or bonds selected from the group, more preferably three or more, and more preferably four or more. In this case, the groups or bonds selected from the ether bond, the thioether bond, the hydroxyl group, the thiol group, the carbonyl bond and the ester bond included in the compound (A2) may be the same or different.

In one aspect of the present invention, the compound (A2) preferably has a molecular weight of 3000 or less, more preferably 2500 or less, more preferably 2000 or less, and particularly preferably 1500 or less.

In one embodiment of the present invention, the number of carbon atoms contained in the compound (A2) is preferably 8 or more, more preferably 9 or more, and more preferably 10 or more.

In one embodiment of the present invention, the number of carbon atoms contained in the compound (A2) is preferably 30 or less, more preferably 20 or less, and even more preferably 15 or less.

In one embodiment of the present invention, the compound (A2) is preferably a compound having a boiling point of 200 ° C or higher, more preferably a compound having a boiling point of 220 ° C or higher, and more preferably a compound having a boiling point of 240 ° C or higher .

In one embodiment of the present invention, the compound (A2) is preferably a compound having an ether bond, more preferably two or more ether bonds, more preferably three or more, and at least four Is particularly preferable.

In one aspect of the present invention, it is more preferable that the compound (A2) contains a repeating unit containing an oxyalkylene structure represented by the following general formula (1).

(47)

Wherein,

R ₁₁ represents an alkylene group which may have a substituent,

n represents an integer of 2 or more,

* Indicates a combined hand.

The number of carbon atoms of the alkylene group represented by R ₁₁ in the general formula (1) is not particularly limited, but is preferably from 1 to 15, more preferably from 1 to 5, still more preferably 2 or 3, Particularly preferred. When the alkylene group has a substituent, the substituent is not particularly limited, and for example, an alkyl group (preferably having 1 to 10 carbon atoms) is preferable.

n is preferably an integer of 2 to 20, and more preferably 10 or less, because the DOF becomes larger.

The average value of n is preferably 20 or less, more preferably from 2 to 10, even more preferably from 2 to 8, and particularly preferably from 4 to 6, because the DOF becomes larger. Here, the "average value of n" means the value of n, which is determined so that the weight average molecular weight of the compound (A2) is measured by GPC and the weight average molecular weight obtained is determined to match the formula. If n is not an integer, rounding is used.

The plural R _{11 s} present may be the same or different.

The compound having a partial structure represented by the general formula (1) is preferably a compound represented by the following general formula (1-1) for the reason that the DOF becomes larger.

(48)

Wherein,

The definition of R _11, specific examples and a suitable embodiment is the same as R ₁₁ in the above-mentioned general formula (1).

R ₁₂ and R ₁₃ each independently represent a hydrogen atom or an alkyl group. The number of carbon atoms of the alkyl group is not particularly limited, but is preferably 1 to 15. R ₁₂ and R ₁₃ may be bonded to each other to form a ring.

m represents an integer of 1 or more. m is preferably an integer of 1 to 20, and more preferably 10 or less, because the DOF becomes larger.

The average value of m is preferably 20 or less, more preferably from 1 to 10, even more preferably from 1 to 8, and particularly preferably from 4 to 6, because the DOF becomes larger. Here, the "average value of m" agrees with the above-mentioned "average value of n ".

When m is 2 or more, plural R _{11 s} may be the same or different.

In one aspect of the present invention, the compound having a partial structure represented by the general formula (1) is preferably an alkylene glycol having at least two ether linkages.

As the compound (A2), a commercially available product may be used, or may be synthesized by a known method.

Specific examples of the compound (A2) are shown below, but the present invention is not limited thereto.

(49)

(50)

(Content of compound (A2)) [

The content of the compound (A2) in the topcoat composition is preferably 0.1% by mass or more, more preferably 1% by mass or more, further preferably 2% by mass or more based on the solid content of the topcoat composition, Particularly preferably 2.5% by mass or more, and most preferably 3% by mass or more.

On the other hand, the upper limit of the content of the compound (A2) is preferably 30% by mass or less, more preferably 25% by mass or less, more preferably 20% by mass or less, more preferably 18% by mass based on the solid content of the topcoat composition % Or less is particularly preferable.

<(A3) Onium salt>

The topcoat composition may contain an onium salt that is relatively weakly acidic to the acid generator. When an acid generated from an acid generator by irradiation of an actinic ray or radiation collides with an onium salt having an unreacted weak acid anion, it releases a weak acid by salt exchange to generate an onium salt having a strong acid anion. In this process, since the strong acid is exchanged into the weak acid having a lower catalytic activity, it is apparent that the acid can be inactivated and the acid diffusion can be controlled.

The onium salt which is relatively weak acid with respect to the acid generator is preferably a compound represented by the following general formula (d1-1) to (d1-3).

(51)

In the formula, R ⁵¹ is a hydrocarbon group which may have a substituent, and Z ^2c is a hydrocarbon group having 1 to 30 carbon atoms which may have a substituent (provided that the carbon adjacent to S is not substituted with a fluorine atom) ), R ⁵² is an organic group, Y ³ is a straight chain, branched chain or cyclic alkylene group or arylene group, Rf is a hydrocarbon group containing a fluorine atom, M ⁺ Iodonium cation.

Preferable examples of the sulfonium cation or the iodonium cation represented by M ⁺ include the sulfonium cation represented by the formula (ZI) and the iodonium cation represented by the formula (ZII).

A preferable example of the anion moiety of the compound represented by the general formula (d1-1) is the structure exemplified in the paragraph [0198] of JP-A No. 2012-242799.

As a preferable example of the anion moiety of the compound represented by the formula (d1-2), the structure exemplified in paragraph [0201] of JP-A No. 2012-242799 is exemplified.

Preferable examples of the anion moiety of the compound represented by the general formula (d1-3) include the structures exemplified in paragraphs [0209] and [0210] of JP-A No. 2012-242799.

The onium salt which is relatively weak acid with respect to the acid generator is a compound (C) having a cation site and an anion site in the same molecule and the cation site and the anion site linked by a covalent bond CA) ").

The compound (CA) is preferably a compound represented by one of the following general formulas (C-1) to (C-3).

(52)

Among the general formulas (C-1) to (C-3)

R ₁ , R ₂ and R ₃ each represent a substituent having 1 or more carbon atoms.

L ₁ represents a divalent linking group or a single bond connecting a cation site and an anion site.

-X ^- it _{^{is, -COO -, -SO 3 -,}} -SO 2 -, -N - represents an anion portion selected from -R _4. R ₄ is a group having a carbonyl group: -C (= O) -, a sulfonyl group: -S (= O) ₂ -, or a sulfinyl group: -S &Lt; / RTI &gt;

R ₁ , R ₂ , R ₃ , R ₄ and L ₁ may be bonded to each other to form a ring structure. In (C-3), two of R ₁ to R ₃ may be combined to form a double bond with N atom.

Examples of the substituent having 1 or more carbon atoms in R ₁ to R ₃ include an alkyl group, a cycloalkyl group, an aryl group, an alkyloxycarbonyl group, a cycloalkyloxycarbonyl group, an aryloxycarbonyl group, an alkylaminocarbonyl group, a cycloalkylaminocarbonyl group, Aminocarbonyl group and the like. Preferably, it is an alkyl group, a cycloalkyl group or an aryl group.

L ₁ as a divalent linking group may be a linear or branched alkylene group, a cycloalkylene group, an arylene group, a carbonyl group, an ether bond, an ester bond, an amide bond, a urethane bond, a urea bond, And the like. L ₁ is more preferably an alkylene group, an arylene group, an ether linkage, an ester linkage, and a group formed by combining two or more of these.

Preferred examples of the compound represented by the general formula (C-1) include compounds represented by the formulas [0037] to [0039] of Japanese Patent Application Laid-Open No. 2013-6827 and the compounds [0027] to [0029] of the Japanese Patent Application Laid- Compounds.

Preferable examples of the compound represented by the general formula (C-2) include the compounds exemplified in paragraphs [0012] to [0013] of JP-A No. 2012-189977.

Preferable examples of the compound represented by the general formula (C-3) include the compounds exemplified in paragraphs [0029] to [0031] of JP-A No. 2012-252124.

(Content of onium salt)

The content of the onium salt in the topcoat composition is preferably 0.5% by mass or more, more preferably 1% by mass or more, further preferably 2.5% by mass or more based on the solid content of the topcoat composition.

On the other hand, the upper limit of the content of the onium salt is preferably 25 mass% or less, more preferably 20 mass% or less, more preferably 10 mass% or less, and 8 mass% or less, based on the solid content of the topcoat composition Particularly preferred.

<Surfactant>

The topcoat composition of the present invention may further contain a surfactant.

&Lt; Preparation method of top coat composition >

In the topcoat composition of the present invention, it is preferable to dissolve each of the above-mentioned components in a solvent and filter it. The filter is preferably made of polytetrafluoroethylene, polyethylene or nylon having a pore size of 0.1 μm or less, more preferably 0.05 μm or less, and further preferably 0.03 μm or less. A plurality of filters may be connected in series or in parallel. Further, the composition may be filtered a plurality of times, or the step of filtering a plurality of times may be a circulating filtration step. The composition may be degassed before or after the filtration of the filter.

[Resist Pattern]

The present invention also relates to a resist pattern formed by the pattern forming method of the present invention described above.

[Electronic Device Manufacturing Method, and Electronic Device]

The present invention also relates to a manufacturing method of an electronic device and an electronic device manufactured by the manufacturing method including the pattern forming method of the present invention described above.

INDUSTRIAL APPLICABILITY The electronic device of the present invention is suitably mounted on electrical and electronic devices (such as home appliances, OA, media-related devices, optical devices, and communication devices).

Example

Hereinafter, the present invention will be described by way of examples, but the present invention is not limited thereto.

Synthesis Example 1: Synthesis of Resin (1)

And 102.3 parts by mass of cyclohexanone were heated to 80 占 폚 under a nitrogen stream. 22.2 parts by mass of a monomer represented by the following structural formula LM-2, 22.8 parts by mass of a monomer represented by the following structural formula PM-1, 6.6 parts by mass of a monomer represented by the following structural formula PM-9, 189.9 parts by mass of cyclohexanone , And 2.40 parts by mass of dimethyl 2,2'-azobisisobutyrate (V-601, manufactured by Wako Pure Chemical Industries, Ltd.) was added dropwise over 5 hours. The solution after completion of the dropwise addition was further stirred at 80 캜 for 2 hours. The obtained reaction solution was cooled, and then reprecipitated with a large amount of hexane / ethyl acetate (mass ratio 9: 1), followed by filtration. The obtained solid was vacuum-dried to obtain 41.1 parts by mass of Resin (1).

(53)

The weight average molecular weight (Mw: in terms of polystyrene) of the resin (1) obtained from GPC (carrier: tetrahydrofuran (THF)) was Mw = 9500 and the degree of dispersion was Mw / Mn = 1.62. ^The composition ratio measured by ¹³ C-NMR was 40/50/10 in molar ratio.

Synthesis Example 2: Synthesis of Resins (2) to (12)

(2) to (12) described below as an acid-decomposable resin were synthesized.

Table 1 summarizes the composition ratios (molar ratios: corresponding in order from the left), weight average molecular weights (Mw) and dispersion degrees (Mw / Mn) of the respective repeating units in Resins (1) to . These were obtained in the same manner as in the above-mentioned Resin (1).

[Table 1]

The repeating units in Table 1 are as follows.

(54)

&Lt; Preparation of resist composition >

The components shown in the following Table 2 were dissolved in a solvent shown in Table 2 below to prepare a solution having a solid content concentration of 3.5% by mass. The resulting solution was filtered with a polyethylene filter having a pore size of 0.04 m to prepare resist compositions Re-1 to Re- 17 was prepared.

[Table 2]

The abbreviations in Table 2 are as follows.

<Acid Generator>

(55)

(56)

&Lt; Basic compound >

(57)

&Lt; Hydrophobic resin &

B-1: A resin (Mw = 5300, Mw / Mn = 1.35) having the following repeating units in a composition ratio of 39/57/2/2 (molar ratio:

(58)

<Solvent>

SL-1: Propylene glycol monomethyl ether acetate (PGMEA)

SL-2: cyclohexanone

SL-3: Propylene glycol monomethyl ether (PGME)

SL-4:? -Butyrolactone

Synthesis Example 3: Synthesis of Resins (X1) to (X14)

The same operations as those of Synthesis Example 1 were carried out to synthesize Resins (X1) to (X14) described below included in the topcoat composition. Table 3 summarizes the composition ratios (molar ratios: corresponding in order from the left), weight average molecular weight (Mw), dispersion degree (Mw / Mn) and glass transition temperature (Tg) . A method of measuring the glass transition temperature (Tg) will be described later.

[Table 3]

[Chemical Formula 59]

(Method of measuring glass transition temperature (Tg)) [

The glass transition temperature (Tg) of Resins (X1) to (X14) was measured by using a differential scanning calorimeter (DSC) Q2000 manufactured by TA Instruments, about 2 mg of a sample of a vacuum dried resin was weighed on an aluminum pan, Was set in a DSC measurement holder, and the temperature was raised from 10 to 300 캜 at 2 캜 / minute, and the temperature was determined from the inflection point in the temperature rise of the resin.

&Lt; Preparation of Top Coat Composition >

The components shown in Table 4 below were dissolved in the solvent shown in Table 4 to prepare a solution having a solid content concentration of 3.0% by mass. The resulting solution was filtered through a polyethylene filter having a pore size of 0.04 m to obtain Topcoat Compositions A-1 to A -16.

[Table 4]

The abbreviations in Table 4 are as follows.

<Additives>

(60)

&Lt; Examples 1 to 22 and Comparative Examples 1 to 3 >

Using the prepared resist composition and topcoat composition, a resist pattern was formed and evaluated by the following method.

(Formation of hole pattern)

A composition ARC29SR (manufactured by Brewer Co.) for forming an organic anti-reflective film was applied on a silicon wafer and baked at 205 DEG C for 60 seconds to form an organic anti-reflective film having a film thickness of 86 nm. And baking was performed at 100 캜 for 60 seconds to form a resist film having a film thickness of 90 nm.

Next, the topcoat composition shown in the following Table 5 was applied onto the resist film, and then baking was performed at a PB temperature (unit: 占 폚) shown in Table 5 for 60 seconds to obtain an upper layer film Top coat) was formed.

Subsequently, using an ArF excimer laser immersion scanner (manufactured by ASML, XT1700i, NA1.20, C-Quad, outer Sigma 0.730, Inner Sigma 0.630, XY deflection), a hole having a hole portion of 65 nm and a hole pitch of 100 nm Pattern exposure was performed on the resist film on which the upper layer film was formed via a halftone mask (the hole portion was shielded) of the array. Ultrapure water was used as the immersion liquid. Thereafter, the wafer was heated at 105 DEG C for 60 seconds (PEB: Post Exposure Bake). Then, it was purged with the organic developing solution described in Table 5 for 30 seconds, developed, and rinsed with the rinsing solution described in Table 5 for 30 seconds and rinsed. Subsequently, the wafer was rotated at a rotational speed of 2000 rpm for 30 seconds to obtain a hole pattern having a hole diameter of 50 nm.

(Formation of line and space pattern)

In the same manner as the formation of the hole pattern, a film was formed on the silicon wafer by coating each composition in the order of the organic antireflection film, the resist film and the upper layer film.

Then, a halftone mask having a space portion of 55 nm and a space between spaces of 110 nm was formed using an ArF excimer laser immersion scanner (ASL, XT1700i, NA1.20, Dipole, outer Sigma 0.800, Inner Sigma 0.564, Y deflection) Pattern exposure was carried out. Ultrapure water was used as the immersion liquid. Thereafter, the substrate was heated at 90 DEG C for 60 seconds (PEB: Post Exposure Bake). Then, it was purged with the organic developing solution described in Table 5 for 30 seconds, developed, and rinsed with the rinsing solution described in Table 5 for 30 seconds and rinsed. Subsequently, the wafer was rotated at a rotational speed of 2000 rpm for 30 seconds to obtain a line pattern having a line width of 50 nm.

(CD Uniformity (CDU))

A hole pattern having a hole diameter of 50 nm formed under the exposure and development conditions of the above (formation of hole patterns) was observed using a line width measuring scanning electron microscope SEM (Hitachi Seisakusho S-9380). The hole diameters of arbitrary 100 hole patterns were measured, and a 3-times value (3 sigma) of the standard deviation (sigma) of the average value was calculated and used as CDU. The smaller the value, the better the performance. The results are shown in Table 5 below.

(Line edge roughness (LER))

A line pattern with a line width of 50 nm formed under the exposure and development conditions of the above (formation of a line and space pattern) was observed using a line width measuring scanning electron microscope SEM (Hitachi Seisakusho S-9380) . The distance between the reference line on which an edge should be located and the actual edge was measured with respect to 50 points of equal intervals included in the range of 5 mu m in the longitudinal direction of the line pattern. The standard deviation of this distance was obtained, and 3? (Unit: nm) was calculated, and this was regarded as LER. The smaller the value, the better the performance. The results are shown in Table 5 below.

(Exposure latitude (EL))

The exposure amount (unit: mJ / cm ² ) when resolving a line pattern having a line width of 50 nm was defined as an optimum exposure amount, and then an exposure amount width allowing a line width of 50 nm ± 10% was determined when the exposure amount was changed. The exposure latitude width was divided by the optimal exposure amount, and the percentage was expressed as exposure latitude (EL, unit:%). The larger the value of EL, the smaller the change in performance depending on the change in exposure amount, and is good. The results are shown in Table 5 below.

[Table 5]

As is evident from the results shown in Table 5, the CDU and LER of Examples 1 to 22 were superior to those of Comparative Examples 1 to 3, and EL was equivalent to or better than that of Comparative Examples 1 to 3.

In comparison between Example 11 and Example 15, the resist composition Re-11 having an acid generator content of 24.0% by mass is more preferable than that of Example 15 using the resist composition Re-1 having an acid generator content of 17.0% In Example 11 was superior because the values of CDU and LER were small.

In comparison between Example 15 and Example 16, Example 16 using the topcoat composition A-12 containing the additive was superior to Example 15 using the topcoat composition A-11 containing no additive. The value of LER was small and excellent, and the value of EL was larger than that of EL.

In comparison between Example 13 and Example 16, Example 13 in which the Tg of the resin contained in the topcoat composition was Tg of 72 占 폚 and the Tg of 101 占 폚 was higher than that of Example 16 because the value of EL was larger .

In comparison between Example 9 and Example 17, Example 17 in which the PB temperature was 120 占 폚 had smaller CDU and LER values than Example 9 in which the PB temperature was 90 占 폚, Cursors were better.

Claims (10)

An actinic ray-sensitive or radiation-sensitive resin composition containing a resin whose polarity increases by the action of an acid and a compound which generates an acid by irradiation of an actinic ray or radiation is applied on a substrate to form a resist film Step a,
A step (b) of forming an upper layer film on the resist film by applying a composition for forming an upper layer film on the resist film,
A step c of immersion exposure of the resist film on which the upper layer film is formed,
And a step (d) of developing the resist-exposed resist film using a developer containing an organic solvent to form a pattern,
The content of the compound capable of generating an acid upon irradiation with the actinic ray or radiation in the actinic ray-sensitive or radiation-sensitive resin composition is not particularly limited so long as the total solid content of the actinic ray-sensitive or radiation- 16.5% by mass or more,
Wherein the composition for forming an upper layer contains a resin (X) having at least 2 and at most 10 CH ₃ partial structures in the side chain portion. The method according to claim 1,
Wherein the composition for forming an upper layer further contains at least one selected from the group consisting of the following (A1), (A2), and (A3).
(A1) a basic compound or a base generator
(A2) a compound containing at least one bond or group selected from the group consisting of an ether bond, a thioether bond, a hydroxyl group, a thiol group, a carbonyl bond and an ester bond
(A3) onium salt The method according to claim 1 or 2,
Wherein the resin (X) has a glass transition temperature of not less than 50 占 폚 and not more than 250 占 폚. The method according to claim 1 or 2,
Wherein the compound capable of generating an acid upon irradiation with an actinic ray or radiation is a compound which generates an acid upon irradiation with an actinic ray or radiation represented by the following general formula (3).
[Chemical Formula 1]

However, in the general formula (3)
Xf each independently represents a fluorine atom or an alkyl group substituted with at least one fluorine atom.
R ₄ and R ₅ each independently represent a hydrogen atom, a fluorine atom, an alkyl group, or an alkyl group substituted with at least one fluorine atom, and when there are a plurality of R ₄ and R _{5, they} may be the same or different.
L represents a divalent linking group, and L in the case where a plurality is present may be the same or different.
W represents an organic group including a cyclic structure.
o represents an integer of 1 to 3; p represents an integer of 0 to 10; q represents an integer of 0 to 10;
X &lt; ⁺ &gt; represents a cation. The method according to claim 1 or 2,
Wherein the step b is a step of forming an upper layer film on the resist film by applying the composition for forming an upper layer film on the resist film and then heating the resist film at a temperature of 100 캜 or more and 200 캜 or less. A resist pattern formed by the pattern forming method according to claim 1 or 2. A method of manufacturing an electronic device, comprising the pattern forming method according to claim 1 or 2. The method according to claim 1 or 2,
Wherein the resin (X) is a water-insoluble resin. The method according to claim 1,
Wherein the composition for forming an upper layer further comprises at least one additive selected from the group consisting of crown ethers, azocrown ethers, and primary to tertiary amines.
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