KR101995762B1 - Substrate treating apparatus and substrate treating method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. A substrate processing apparatus according to an embodiment of the present invention includes: a chamber having a processing space therein; A support unit for supporting the substrate within the processing space; A gas supply unit for supplying a process gas used for processing the substrate into the process space; And a plasma source for generating a plasma by exciting the process gas supplied in the process space. The plasma source includes: an RF power source for supplying an RF signal; And an antenna for receiving the RF signal and generating a plasma from the process gas supplied to the chamber. The antenna includes a ring-shaped main antenna; And a plurality of auxiliary antennas formed along the circumference of the main antenna. Each of the plurality of auxiliary antennas is connected in parallel to the main antenna.

Description

[0001] DESCRIPTION [0002] Substrate treating apparatus and substrate treating method [

The present invention relates to a substrate processing apparatus and a substrate processing method.

In order to manufacture a semiconductor device, a substrate is subjected to various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning to form a desired pattern on the substrate. Among them, the wet etching and the dry etching are used for removing the selected heating region from the film formed on the substrate. Among them, an etching apparatus using a plasma is used for dry etching. Generally, in order to form a plasma, an electromagnetic field is formed in an inner space of a chamber, and an electromagnetic field excites a process gas provided in the chamber into a plasma state. Plasma is an ionized gas state composed of ions, electrons, radicals, and so on. Plasma is generated by very high temperatures, strong electric fields, or RF electromagnetic fields. The semiconductor device fabrication process employs a plasma to perform the etching process. The etching process is performed by colliding the ion particles contained in the plasma with the substrate.

The present invention is intended to provide a substrate processing apparatus capable of controlling the electric field distribution in a region in a chamber where substrate processing is performed, and a substrate processing method performed thereby.

According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a chamber having a processing space therein; A support unit for supporting the substrate in the processing space; A gas supply unit for supplying a process gas used for processing the substrate into the processing space; And a plasma source for exciting the process gas supplied in the process space to generate a plasma, the plasma source comprising: an RF power supply for supplying an RF signal; And an antenna for receiving the RF signal and generating a plasma from the process gas supplied to the chamber, wherein the antenna comprises: a ring-shaped main antenna; And a plurality of auxiliary antennas formed along the periphery of the main antenna, wherein each of the plurality of auxiliary antennas is connected to the main antenna in parallel.

The antenna may further include: a switch provided between the main antenna and the plurality of auxiliary antennas, respectively.

The substrate processing apparatus according to an embodiment of the present invention may further include a controller for controlling the switch of each of the plurality of auxiliary antennas according to a process state.

The main antenna includes an annular internal antenna; And a plurality of auxiliary antennas formed along the periphery of the inner antenna and connected in parallel to the inner antenna; And a plurality of external auxiliary antennas formed along the periphery of the external antenna and connected in parallel to the external antenna.

The plurality of external auxiliary antennas may be disposed at azimuth angles corresponding to the plurality of internal auxiliary antennas with respect to the center of the main antenna.

At least one of the plurality of external auxiliary antennas is formed in a direction toward the internal antenna, and may be disposed between the plurality of internal auxiliary antennas.

In the substrate processing apparatus according to the embodiment of the present invention, the external auxiliary antenna is formed on the radially outer side and the inward side of the same azimuthal position of the external antenna, and the external auxiliary antenna formed inside the external antenna includes the plurality of internal auxiliary And can be disposed between the antennas.

The number of the plurality of external auxiliary antennas may be greater than the number of the plurality of internal auxiliary antennas.

At least one of the plurality of auxiliary antennas may be disposed on the same plane as the main antenna.

At least one of the plurality of auxiliary antennas may be vertically bent in the main antenna.

The at least one auxiliary antenna may be disposed at an angle of 90 degrees downward with respect to the main antenna.

Each of the plurality of auxiliary antennas may be provided in a ring shape.

According to another aspect of the present invention, there is provided a method of manufacturing a plasma processing apparatus, comprising: supplying a process gas into a process space inside a chamber; and exciting the process gas supplied to the process space with an antenna to generate a plasma, A plurality of auxiliary antennas formed along the circumference of the main antenna and connected in parallel to the main antenna, and a switch provided between the main antenna and the plurality of auxiliary antennas, respectively, The generating step includes: controlling the switch of each of the plurality of auxiliary antennas in accordance with a process state in the chamber.

The step of controlling the switch may control the electric field distribution and the plasma density distribution by region in the chamber by controlling the current path by controlling the switch by feedback of process results.

Wherein controlling the switch comprises: measuring at least one of an electromagnetic field distribution and a plasma density distribution in the chamber; And controlling the switch such that the electromagnetic field distribution or the plasma density distribution becomes uniform.

According to the embodiment of the present invention, there is provided a substrate processing apparatus capable of controlling the electric field distribution in an area in a chamber where substrate processing is performed, and a substrate processing apparatus performed thereby.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
2 is a plan view of an antenna that constitutes a substrate processing apparatus according to an embodiment of the present invention.
3 is a plan view of an antenna constituting a substrate processing apparatus according to another embodiment of the present invention.
4 to 8 are plan views of an antenna constituting a substrate processing apparatus according to still another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified into various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

Hereinafter, a substrate processing apparatus for etching a substrate by generating a plasma by an inductively coupled plasma (ICP) method will be described. However, the present invention is not limited to this, and can be applied to various types of apparatuses that process substrates using a plasma, such as a capacitively coupled plasma (CCP) method or a remote plasma method. In the embodiment of the present invention, an electrostatic chuck is described as an example of a supporting unit. However, the present invention is not limited to this, and the support unit can support the substrate by mechanical clamping or support the substrate by vacuum.

1 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, a substrate processing apparatus 10 processes a substrate W using a plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 includes a chamber 100, a support unit 200, a gas supply unit 300, a plasma source 400, and an exhaust unit 500.

The chamber 100 has a processing space for processing the substrate therein. The chamber 100 includes a housing 110, a cover 120, and a liner 130.

The housing 110 has a space in which an upper surface is opened. The inner space of the housing 110 is provided to the processing space where the substrate processing process is performed. The housing 110 is made of a metal material. The housing 110 may be made of aluminum. The housing 110 may be grounded. An exhaust hole 102 is formed in the bottom surface of the housing 110. The exhaust hole 102 is connected to the exhaust line 151. The reaction by-products generated in the process and the gas staying in the inner space of the housing 110 can be discharged to the outside through the exhaust line 151. The inside of the housing 110 is decompressed to a predetermined pressure by the exhaust process.

The cover 120 covers the open upper surface of the housing 110. The cover 120 is provided in a plate shape to seal the inner space of the housing 110. The cover 120 may include a dielectric substance window.

The liner 130 is provided inside the housing 110. The liner 130 has an inner space with open top and bottom surfaces. The liner 130 may be provided in a cylindrical shape. The liner 130 may have a radius corresponding to the inner surface of the housing 110. The liner 130 is provided along the inner surface of the housing 110. At the upper end of the liner 130, a support ring 131 is formed. The support ring 131 is provided in the form of a ring and projects outwardly of the liner 130 along the periphery of the liner 130. The support ring 131 rests on the top of the housing 110 and supports the liner 130. The liner 130 may be provided in the same material as the housing 110. The liner 130 may be made of aluminum. The liner 130 protects the inside surface of the housing 110. For example, in the process of exciting the process gas, an arc discharge may be generated inside the chamber 100. Arc discharge damages peripheral devices. The liner 130 protects the inner surface of the housing 110 to prevent the inner surface of the housing 110 from being damaged by the arc discharge. In addition, reaction byproducts generated during the substrate processing process are prevented from being deposited on the inner wall of the housing 110. The liner 130 is less expensive than the housing 110 and is easier to replace. Thus, if the liner 130 is damaged by an arc discharge, the operator can replace the new liner 130.

The support unit 200 supports the substrate within the processing space inside the chamber 100. For example, the support unit 200 is disposed inside the housing 110. The support unit 200 supports the substrate W. [ The support unit 200 may be provided in an electrostatic chucking manner for attracting the substrate W using an electrostatic force. Alternatively, the support unit 200 may support the substrate W in various manners, such as mechanical clamping. Hereinafter, the support unit 200 provided in an electrostatic chucking manner will be described.

The support unit 200 includes a support plate 220, an electrostatic electrode 223, a flow path forming plate 230, a focus ring 240, an insulating plate 250, and a lower cover 270. The support unit 200 may be provided to be spaced apart from the bottom surface of the housing 110 inside the chamber 100.

The support plate 220 is located at the upper end of the support unit 200. The support plate 220 is provided as a disk-shaped dielectric substance. A substrate W is placed on the upper surface of the support plate 220. The support plate 220 is formed with a first supply passage 221 used as a passage through which heat transfer gas is supplied to the bottom surface of the substrate W.

The electrostatic electrode 223 is buried in the support plate 220. The electrostatic electrode 223 is electrically connected to the first lower power source 223a. An electrostatic force is applied between the electrostatic electrode 223 and the substrate W by the current applied to the electrostatic electrode 223 and the substrate W is attracted to the support plate 220 by the electrostatic force.

The flow path forming plate 230 is positioned below the support plate 220. The bottom surface of the support plate 220 and the upper surface of the flow path plate 230 can be adhered by an adhesive agent 236. [ A first circulation channel 231, a second circulation channel 232, and a second supply channel 233 are formed in the flow path plate 230. The first circulation passage 231 is provided as a passage through which the heat transfer gas circulates. The second circulation flow passage 232 is provided as a passage through which the cooling fluid circulates. The second supply passage 233 connects the first circulation passage 231 with the first supply passage 221. The first circulation passage 231 is provided as a passage through which the heat transfer gas circulates. The first circulation flow path 231 may be formed in a spiral shape inside the flow path forming plate 230. Alternatively, the first circulation flow path 231 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 are formed at the same height.

The first circulation channel 231 is connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium is stored in the heat transfer medium storage unit 231a. The heat transfer medium includes an inert gas. The heat transfer medium may include helium (He) gas. The helium gas is supplied to the first circulation channel 231 through the supply line 231b and is supplied to the bottom surface of the substrate W through the second supply channel 233 and the first supply channel 221 in sequence. The helium gas serves as a medium for assisting heat exchange between the substrate W and the support plate 220. Therefore, the temperature of the substrate W becomes uniform throughout.

The second circulation channel 232 is connected to the cooling fluid storage 232a through the cooling fluid supply line 232c. The cooling fluid is stored in the cooling fluid storage part 232a. A cooler 232b may be provided in the cooling fluid storage portion 232a. The cooler 232b cools the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 through the cooling fluid supply line 232c is circulated along the second circulation channel 232 to cool the flow path formation plate 230. The flow path forming plate 230 is cooled and the support plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature. For the reasons described above, generally, the lower portion of the focus ring 240 is provided at a lower temperature than the upper portion.

The focus ring 240 is disposed in the edge area of the support unit 200. The focus ring 240 has a ring shape and is provided so as to surround the support plate 220. For example, the focus ring 240 is disposed along the periphery of the support plate 220 to support the outer region of the substrate W.

The insulating plate 250 is positioned below the flow path plate 230. The insulating plate 250 is provided as an insulating material and electrically isolates the flow path plate 230 from the lower cover 270. The lower cover 270 is located at the lower end of the support unit 200. The lower cover 270 is spaced upwardly from the bottom surface of the housing 110. The lower cover 270 has a space in which an upper surface is opened. The upper surface of the lower cover 270 is covered with an insulating plate 250. The outer radius of the cross section of the lower cover 270 may be provided with a length equal to the outer radius of the insulating plate 250. [ A lift pin or the like may be positioned in the inner space of the lower cover 270 to allow the substrate W to be conveyed to be received from an external conveying member to be received as a supporting plate.

The lower cover 270 has a connecting member 273. The connecting member 273 connects the outer side surface of the lower cover 270 and the inner side wall of the housing 110. A plurality of connecting members 273 may be provided on the outer surface of the lower cover 270 at regular intervals. The connecting member 273 supports the support unit 200 inside the chamber 100. Further, the connecting member 273 is connected to the inner wall of the housing 110, so that the lower cover 270 is electrically grounded.

A first power supply line 223c connected to the first lower power supply 223a, a heat transfer medium supply line 231b connected to the heat transfer medium storage 231a and a cooling fluid supply line 232c connected to the cooling fluid storage 232a And the like extend into the lower cover 270 through the inner space of the connecting member 273.

The gas supply unit 300 supplies gas to the processing space inside the chamber 100. The gas supplied by the gas supply unit 300 includes a process gas used for processing the substrate. Further, the gas supply unit 300 can supply the cleaning gas used for cleaning the inside of the chamber 100.

The gas supply unit 300 includes a gas supply nozzle 310, a gas supply line 320, and a gas storage unit 330. The gas supply nozzle 310 is installed at the center of the cover 120. A jetting port is formed on the bottom surface of the gas supply nozzle 310. The injection port is located under the cover 120 and supplies gas into the chamber 100. The gas supply line 320 connects the gas supply nozzle 310 and the gas storage unit 330. The gas supply line 320 supplies the gas stored in the gas storage part 330 to the gas supply nozzle 310. A valve 321 is installed in the gas supply line 320. The valve 321 opens and closes the gas supply line 320 and regulates the flow rate of the gas supplied through the gas supply line 320.

The plasma source 400 generates a plasma from the gas supplied into the processing space inside the chamber 100. The plasma source 400 is provided outside the processing space of the chamber 100. According to one embodiment, an inductively coupled plasma (ICP) source may be used as the plasma source 400. The plasma source 400 includes an antenna chamber 410, an antenna 420, and a radio frequency (RF) power source 430. The antenna chamber 410 is provided in a cylindrical shape with its bottom opened. The antenna chamber 410 is provided with a space therein. The antenna chamber 410 is provided so as to have a diameter corresponding to the chamber 100. The lower end of the antenna chamber 410 is detachably attached to the cover 120. The antenna 420 is disposed inside the antenna chamber 410. The antenna 420 is provided in a spirally wound coil having a plurality of turns, and is connected to the RF power source 430. The antenna 420 receives power from the RF power supply 430. The RF power source 430 may be located outside the chamber 100. The powered antenna 420 may form an electromagnetic field in the processing space of the chamber 100. The process gas is excited into a plasma state by an electromagnetic field.

The exhaust unit 500 is positioned between the inner wall of the housing 110 and the support unit 200. The exhaust unit 500 includes an exhaust plate 510 having a through-hole 511 formed therein. The exhaust plate 510 is provided in an annular ring shape. A plurality of through holes 511 are formed in the exhaust plate 510. The process gas provided in the housing 110 passes through the through holes 511 of the exhaust plate 510 and is exhausted to the exhaust hole 102. The flow of the process gas can be controlled according to the shape of the exhaust plate 510 and the shape of the through holes 511. [

A heater 225 is embedded in the support plate 220. The heater 225 is located below the electrostatic electrode 223. The heater 225 generates heat by resisting the exothermic power source (current) applied from the heater cable 225c. The generated heat is transferred to the substrate W through the support plate 220. The substrate W is maintained at a predetermined temperature by the heat generated in the heater 225.

The heater power supply part 225a is provided for applying the heating power to the heater 225. [ A filter unit (not shown) may be provided between the heater power supply unit 225a and the heater 225 to block the introduction of high frequency waves into the heater power supply unit 225a. In one embodiment, when a 13.56 MHz high frequency power is applied by the plasma source 400 to generate a plasma, the filter unit passes a heating power, for example, a 60 Hz AC power, through a heater cable 225c, May be designed to block the introduction of 13.56 MHz RF into the power supply 225a. The filter portion may be provided with elements such as a capacitor, an inductor, and the like.

2 is a plan view of an antenna that constitutes a substrate processing apparatus according to an embodiment of the present invention. 2, the antenna 420 includes annular main antennas 422a and 422b, a plurality of auxiliary antennas 424a and 424b formed around the main antennas 422a and 422b, (426) and a control unit (428). The main antennas 422a and 422b can receive the RF power through the feed points 421a and 421b to form an electric field.

Each of the plurality of auxiliary antennas 424a and 424b is connected to the main antennas 422a and 422b in parallel. Accordingly, a part of the current flowing through the main antennas 422a and 422b can flow through the auxiliary antennas 424a and 424b. The auxiliary antennas 424a and 424b may be connected to areas of the main antennas 422a and 422b except for the feeding points 421a and 421b. A plurality of switches 426 are provided between the main antennas 422a and 422b and the plurality of auxiliary antennas 424a and 424b, respectively. In one embodiment, switch 426 may be provided as a MOSFET device.

The main antennas 422a and 422b may include an annular internal antenna 422a and an external antenna 422b surrounding the internal antenna 422a in a ring shape and arranged coaxially with the internal antenna 422a. The plurality of auxiliary antennas 424a and 424b may include a plurality of inner auxiliary antennas 424a and a plurality of outer auxiliary antennas 424b. The plurality of inner auxiliary antennas 424a and the plurality of outer auxiliary antennas 424b may be provided in the form of a ring, respectively.

The inner auxiliary antenna 424a is connected to the radially outer side of the inner antenna 422a and the outer auxiliary antenna 424b can be connected to the radially outer side of the external antenna 422b. In the illustrated example, the internal auxiliary antenna 424a and the external auxiliary antenna 424b are connected to the main antennas 422a and 422b so as to have the same azimuth angle in the circumferential direction of the main antennas 422a and 422b. In the illustrated example, three auxiliary antennas 424a and 424b are connected to the main antennas 422a and 422b, respectively, but the number of auxiliary antennas may be variously changed according to the radius of the main antennas 422a and 422b .

In addition, the main antennas 422a and 422b may be provided as a single ring-shaped antenna, or may be provided as three or more ring-shaped antennas. The main antennas 422a and 422b may be composed of a plurality of divided rings, or may be provided to supply RF power to each of the divided rings. In the illustrated example, the auxiliary antennas 424a and 424b are provided on the same plane as the main antennas 422a and 422b, but the auxiliary antennas 424a and 424b are inclined by a predetermined angle with respect to the plane of the main antennas 422a and 422b. ) Can be installed.

A plurality of internal auxiliary antennas 424a are formed around the internal antenna 422a and are connected in parallel to the internal antenna 422a. A plurality of external auxiliary antennas 424b are formed along the periphery of the external antenna 422b and are connected in parallel to the external antenna 422b. The plurality of switches 426 includes a plurality of first switches 426a for controlling the current flowing through the plurality of internal auxiliary antennas 424a and a plurality of switches 426b for controlling the currents flowing through the plurality of external auxiliary antennas 424b. 2 switch 426b.

The control unit 428 controls the switches 426 of each of the plurality of auxiliary antennas 424a and 424b according to the process state. The auxiliary antennas 424a and 424b are selectively driven by the control unit 428 and can control the electromagnetic field distribution and the plasma density distribution in the chamber by controlling the current path of the antenna by feedback of the process results.

In one embodiment, the switch 426 may be controlled by feedback of process results to control the electric field distribution and the plasma density distribution by controlling the current path for each region within the chamber. In one embodiment, the electromagnetic field distribution and / or the plasma density distribution in the chamber during the process can be measured to control the switch such that the electromagnetic field distribution or the plasma density distribution is uniform.

For example, the electromagnetic field intensity and / or the plasma density of the corresponding region may be increased by opening a switch corresponding to a region where the electromagnetic field intensity and / or the plasma density is less than the reference value. The reference value may be, for example, a predetermined value, a mean value of the measured electromagnetic field distribution and / or a plasma density, or a value calculated based on the average value.

3 is a plan view of an antenna constituting a substrate processing apparatus according to another embodiment of the present invention. In describing the embodiment of FIG. 3 and the other embodiments described below, the same or corresponding components are denoted by the same reference numerals as much as possible, and redundant descriptions may be omitted. The antenna 420 according to the embodiment of FIG. 3 differs from the embodiment described above in that the main antennas 422a and 422b are provided in a coiled configuration.

4 to 8 are plan views of an antenna constituting a substrate processing apparatus according to still another embodiment of the present invention. The antenna 420 according to the embodiment of FIG. 4 is configured such that the external auxiliary antenna 424b is connected to the inside of the external antenna 422b in the radial direction and the auxiliary antenna is not connected to the internal antenna 422a. There is a difference from the example.

The antenna 420 according to the embodiment of FIG. 5 is different from the antenna 420 of FIG. 5 in that a larger number of external auxiliary antennas 424b than the internal auxiliary antenna 424a are connected to the external antenna 422b having a larger radius than the internal antenna 422a There is a difference from the described embodiment. According to this embodiment, the electric field around the external antenna 422b and the plasma density can be more finely controlled.

The antenna 420 according to the embodiment of FIG. 6 differs from the previously described embodiment in that the external auxiliary antenna 424b is alternately connected to the outside and inside of the external antenna 422b in the radial direction. The external auxiliary antenna 424b connected to the radially inner side of the external antenna 422b is connected to the internal auxiliary antenna 424a at a position which does not interfere with the internal auxiliary antennas 424a connected to the internal antenna 422a, In the direction perpendicular to the plane of FIG.

The antenna 420 according to the embodiment of FIG. 7 differs from the previously described embodiment in that the external auxiliary antenna 424b is connected to the outside and inside of the same azimuthal position of the external antenna 422b in the radial direction. The inner auxiliary antennas 424a may be formed at azimuth positions that do not interfere with the outer auxiliary antennas 424b connected to the radially inner side of the outer antenna 422b. 6 and 7, it is possible to more finely control the electric field and the plasma density in the space between the internal antenna 422a and the external antenna 422b.

The antenna 420 according to the embodiment of FIG. 8 differs from the above-described embodiments in that the auxiliary antennas 424a and 424b are vertically bent on the main antennas 422a and 422b. In one embodiment, the auxiliary antennas 424a and 424b may be disposed at 90 degrees to the main antennas 422a and 422b. According to the embodiment of Fig. 8, the electric field distribution by the auxiliary antennas 424a and 424b can be controlled in a direction different from that of the main antennas 422a and 422b.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: chamber 200: support unit
300: gas supply unit 400: plasma source
420: antenna 422a: internal antenna
422b: external antenna 424a: internal auxiliary antenna
424b: external auxiliary antenna 426: switch
428: control unit 430: RF power source

Claims (16)

A chamber having a processing space therein;
A support unit for supporting the substrate in the processing space;
A gas supply unit for supplying a process gas used for processing the substrate into the processing space; And
And a plasma source for exciting the process gas supplied in the process space to generate a plasma,
Wherein the plasma source comprises:
An RF power supply for supplying an RF signal; And
And an antenna for receiving the RF signal and generating a plasma from the process gas supplied to the chamber,
The antenna comprising:
A ring-shaped main antenna;
A plurality of auxiliary antennas formed along the periphery of the main antenna;
A switch provided between the main antenna and the plurality of auxiliary antennas; And
And a control unit for controlling the switch of each of the plurality of auxiliary antennas according to a process state,
Wherein each of the plurality of auxiliary antennas is connected to the main antenna in parallel. The method according to claim 1,
Wherein the plurality of auxiliary antennas are disposed apart from each other. The method according to claim 1,
Wherein the plurality of auxiliary antennas includes:
Wherein when the switch is turned on, a current is provided so as to flow simultaneously to the main antenna and the plurality of auxiliary antennas, and when the switch is turned off, a current is supplied to flow only through the main antenna among the main antenna and the plurality of auxiliary antennas Device. A chamber having a processing space therein;
A support unit for supporting the substrate in the processing space;
A gas supply unit for supplying a process gas used for processing the substrate into the processing space; And
And a plasma source for exciting the process gas supplied in the process space to generate a plasma,
Wherein the plasma source comprises:
An RF power supply for supplying an RF signal; And
And an antenna for receiving the RF signal and generating a plasma from the process gas supplied to the chamber,
The antenna comprising:
A ring-shaped main antenna; And
And a plurality of auxiliary antennas formed along the periphery of the main antenna,
Wherein each of the plurality of auxiliary antennas is connected to the main antenna in parallel,
The main antenna includes:
A ring-shaped internal antenna; And
An external antenna in the form of a ring,
Wherein the plurality of auxiliary antennas includes:
A plurality of internal auxiliary antennas formed along the periphery of the internal antenna and connected in parallel to the internal antenna; And
And a plurality of external auxiliary antennas formed along the periphery of the external antenna and connected in parallel to the external antenna. 5. The method of claim 4,
Wherein the plurality of external auxiliary antennas are disposed at azimuth angles corresponding to the plurality of internal auxiliary antennas with respect to the center of the main antenna. 5. The method of claim 4,
Wherein at least one of the plurality of external auxiliary antennas is formed in a direction toward the internal antenna, and is disposed between the plurality of internal auxiliary antennas. 5. The method of claim 4,
Wherein external auxiliary antennas are formed on the outside and inside of the same azimuthal position of the external antennas, respectively, and external auxiliary antennas formed inside the external antennas are disposed between the plurality of internal auxiliary antennas. 5. The method of claim 4,
Wherein the number of the plurality of external auxiliary antennas is greater than the number of the plurality of internal auxiliary antennas. The method according to claim 1,
Wherein at least one of the plurality of auxiliary antennas is disposed on the same plane as the main antenna. A chamber having a processing space therein;
A support unit for supporting the substrate in the processing space;
A gas supply unit for supplying a process gas used for processing the substrate into the processing space; And
And a plasma source for exciting the process gas supplied in the process space to generate a plasma,
Wherein the plasma source comprises:
An RF power supply for supplying an RF signal; And
And an antenna for receiving the RF signal and generating a plasma from the process gas supplied to the chamber,
The antenna comprising:
A ring-shaped main antenna; And
And a plurality of auxiliary antennas formed along the periphery of the main antenna,
Wherein each of the plurality of auxiliary antennas is connected to the main antenna in parallel,
Wherein at least one of the plurality of auxiliary antennas is vertically bent in the main antenna. 11. The method of claim 10,
Wherein the at least one auxiliary antenna is disposed at a 90 DEG angle downward with respect to the main antenna. 12. The method according to any one of claims 1 to 11,
Wherein the plurality of auxiliary antennas are each provided in a ring shape. Supplying a process gas into a process space inside the chamber and exciting the process gas supplied to the process space with an antenna to generate a plasma,
The antenna includes a ring-shaped main antenna, a plurality of auxiliary antennas formed around the main antenna and connected in parallel to the main antenna, and a switch provided between the main antenna and the plurality of auxiliary antennas, respectively and,
Wherein generating the plasma comprises:
And controlling the switch of each of the plurality of auxiliary antennas according to a process state in the chamber. 14. The method of claim 13,
Wherein the step of controlling the switch comprises:
And controlling the current path by controlling the switch by feedback of process results to control the field distribution and the plasma density distribution by region in the chamber. The method according to claim 13 or 14,
Wherein the step of controlling the switch comprises:
Measuring at least one of an electromagnetic field distribution and a plasma density distribution in the chamber; And
And controlling the switch such that the electromagnetic field distribution or the plasma density distribution is uniform. 14. The method of claim 13,
Wherein the plurality of auxiliary antennas includes:
Wherein when the switch is turned on, a current is provided so as to flow simultaneously to the main antenna and the plurality of auxiliary antennas, and when the switch is turned off, a current is supplied to flow only through the main antenna among the main antenna and the plurality of auxiliary antennas Way.

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