KR101895888B1 - Filter and radio frequency package having microstrip line - Google Patents

Abstract

A filter having a strip transmission line includes: a dielectric layer including a top surface and a bottom surface facing the top surface; A plurality of signal transmission lines extending in the thickness direction of the dielectric layer and inserted under the surface of the upper surface of the dielectric layer so as to have different depths; And a ground layer disposed in contact with the lower surface of the dielectric layer.

Description

[0001] The present invention relates to a filter and a radio frequency package having a microstrip transmission line,

The present application relates to a microstrip transmission line, and more particularly to a filter and an RF package having a microstrip transmission line.

With the recent increase in demand for portable mobile products and the development of wireless communication and mobile communication, demand for high frequency signal components such as radio frequency (RF) is increasing. A microstrip line is a component that is placed on a dielectric and has a role of transmitting a high frequency signal. The microstrip transmission line is small, light, easy to mass-produce and easy to integrate, and thus variously applied to parts for transmitting high-frequency signals.

The microstrip transmission line is applied to a resonator or a filter by combining a plurality of transmission lines. However, there is a limit in varying the thickness of the transmission line. Accordingly, there is a limit in reducing the size of a mobile product using a microstrip transmission line.

SUMMARY OF THE INVENTION A problem to be solved by the present invention is to provide a microstrip transmission line capable of reducing the line width of a microstrip transmission line by inserting a plurality of signal transmission lines having different depths under the surface of a dielectric layer made of a glass material in a vertical direction, A filter having a line and an RF package.

A filter having a microstrip transmission line according to an aspect of the present invention includes: a dielectric layer including an upper surface and a lower surface opposed to the upper surface; A plurality of signal transmission lines extending in a thickness direction of the dielectric layer and inserted under the surface of the upper surface of the dielectric layer, the microstrip transmission lines having different depths; And a ground layer disposed in contact with a lower surface of the dielectric layer.

An RF package having a microstrip transmission line according to another aspect of the present application includes: a package substrate; And a plurality of signal transmission lines disposed on the package substrate and having different depths in a portion adjacent to the RF chip so as to match an impedance difference between the RF chip and the feed line, the RF chip including a feed line and an antenna, And an interposer laminated structure inserted under the surface of the interposer.

According to the embodiment of the present application, a plurality of signal transmission lines having different depths are inserted while inserting the microstrip transmission line disposed between the input port and the output port so as to pass below the surface of the dielectric layer made of glass, Thereby providing an advantage of reducing the size. Thereby providing an advantage that the electronic device can be downsized.

Further, since the plurality of signal transmission lines are formed so as to extend in the depth direction of the dielectric layer, the coupling effect between adjacent microstrip transmission lines can be advantageously reduced.

FIGS. 1 to 6 are diagrams for explaining the impedance change according to the line width change of the microstrip transmission line applied in the embodiment of the present application.
Figs. 7 and 8 are diagrams for explaining the microstrip transmission line disposed on the surface of the dielectric layer. Fig.
9 to 11 are views illustrating a filter having a microstrip transmission line according to an embodiment of the present invention.
12 is a graph showing a change in frequency response characteristic of the low-pass filter of FIG.
13 is a view for explaining an RF package having a microstrip transmission line according to another embodiment of the present application.

The embodiments of the present application are illustrated and described in the drawings, which are intended to illustrate what is being suggested by the present application and are not intended to limit what is presented in the present application in a detailed form.

Like reference numerals refer to like elements throughout the specification. Accordingly, although the same reference numerals or similar reference numerals are not mentioned or described in the drawings, they may be described with reference to other drawings. Further, even if the reference numerals are not shown, they can be described with reference to other drawings.

FIGS. 1, 3, and 5 are diagrams for explaining line width variation of a microstrip transmission line. And FIGS. 2, 4, and 6 are graphs showing line widths of the microstrip transmission line according to the impedance measurement values of FIGS. 1, 3, and 5.

FIGS. 1, 3, and 5 are views showing a microstrip transmission line applied in the embodiment of the present application, and the remaining components except for the microstrip transmission line are the same. Accordingly, the same constituent elements will be described using the same reference numerals. Referring to FIGS. 1, 3 and 5, a substrate 100 having microstrip lines 115a, 115b and 115c according to an embodiment of the present invention includes a dielectric layer 105, a dielectric layer A ground layer 110 disposed on the lower surface 105b of the dielectric layer 105 and the microstrip transmission lines 115a, 115b and 115c inserted in the dielectric layers 105 may be disposed.

The dielectric layer 105 may comprise a top surface 105a and a bottom surface 105b opposite the top surface 105a. The dielectric layer 105 is disposed using a glass material instead of materials such as an epoxy resin or a composite resin including materials that are commonly applied to a printed circuit board, for example, FR4. When the glass material is used, the linewidth size of the microstrip transmission lines 115a, 115b, and 115c to be inserted into the dielectric layer 105 can be precisely controlled as compared with the case where a material such as epoxy resin or composite resin including FR4 is used can do.

The ground layer 110 may be arranged to contact the lower surface 105b of the dielectric layer 105. [ The ground layer 110 may be made of a metal material such as copper (Cu). In one example, the ground layer 110 may have a planar shape that covers the entire surface of the lower surface 105b of the dielectric layer 105. [ The microstrip transmission lines 115a, 115b, and 115c inserted in the dielectric layer 105 may be disposed between an input port 117 and an output port 119. One end of the microstrip transmission lines 115a, 115b and 115c is electrically connected to the input port 117 and the other end is electrically connected to the output port 119. [ The input port 117 receives a transmission signal such as an RF signal. In one example, the input port 117 may be electrically connected to the ground layer 110 through the dielectric layer 105 while one end is connected to one end of each of the microstrip transmission lines 115a, 115b, have.

The output port 119 is disposed at a position spaced apart from the input port 117 by a predetermined distance. The output port 119 outputs a transmission signal received from the input port 117 and passed through the microstrip transmission lines 115a, 115b, and 115c, respectively. In one example, the output port 119 may be electrically connected to the ground layer 110 through one end of the dielectric layer 105 while one end of the output port 119 is connected to the other end of the microstrip transmission lines 115a, 115b, and 115c.

1, the microstrip transmission lines 115a, 115b, and 115c extend from the surface of the upper surface 105a of the dielectric layer 105 in the thickness direction of the dielectric layer 105, respectively, Can be arranged in the inserted shape by the depths (t1, t2, t3). The microstrip transmission lines 115a, 115b and 115c may include a first microstrip transmission line 115a, a second microstrip transmission line 115b and a third microstrip transmission line 115c. The first microstrip transmission line 115a is inserted at a first depth t1 and the second microstrip transmission line 115b is inserted at a second depth t2 which is deeper than the first microstrip transmission line 115a. And the third microstrip transmission line 115c is inserted at a third depth t3 which is deeper than the second microstrip transmission line 115b. In one example, the first microstrip transmission line 115a has a depth of 0.005 mm for the first depth t1, the second depth t2 of the second microstrip transmission line 115b is 0.05 mm, The third depth t3 of the third microstrip transmission line 115c has a depth of 0.1 mm.

The first to third microstrip transmission lines 115a, 115b and 115c are formed by etching the dielectric layer 105 made of a glass material in the form of first to third microstrip transmission lines 115a, 115b and 115c, (Cu) as a plating solution. As described above, since the dielectric layer 105 is made of a glass material, the line width of the microstrip transmission lines 115a, 115b, and 115c is smaller than that of a material such as an epoxy resin or a composite resin. Can be precisely controlled so as to have the following characteristics.

The upper surface of the first to third microstrip transmission lines 115a, 115b and 115c is formed to have the same level as the upper surface 105a of the dielectric layer 105. The surface of the substrate 100 has a protruding portion Flat shape. The depths t1, t2 and t3 of the first through third microstrip transmission lines 115a, 115b and 115c inserted in the thickness direction of the dielectric layer 105 are adjusted to form the first through third microstrip transmission lines 115a, 115b, and 115c of the line widths w1, w2, and w3.

1, 3, and 5, the depths t1, t2, and t3 at which the first through third microstrip transmission lines 115a, 115b, and 115c are inserted in the thickness direction of the dielectric layer 105 The distances l1, l2 and l3 between the bottom surface of the first to third microstrip transmission lines 115a, 115b and 115c and the ground layer 110 are gradually shortened. In the microstrip transmission line, a signal is transmitted between the microstrip transmission line and the ground layer 110 in the form of a field. Accordingly, as the depths t1, t2, and t3 inserted in the thickness direction of the dielectric layer 105 are increased, the fields transmitted between the microstrip transmission line and the ground layer 110 are more coupled, It can be different. Accordingly, if the depths t1, t2, and t3 of the first through third microstrip transmission lines 115a, 115b, and 115c inserted in the thickness direction of the dielectric layer 105 are adjusted, the impedance size may vary, Can be controlled.

Hereinafter, description will be made with reference to Figs. 2, 4 and 6. The input impedance and the output impedance value of an electronic device using radio frequency (RF) are designed to be a standard value of 50 ohm (OMEGA), so that the line width of the microstrip transmission line at a position where the impedance value is 50 ohm The size is determined. 2 is a graph showing a frequency (GHz) -impedance measurement value Zc when the first microstrip transmission line 115a of FIG. 1 is inserted at a first depth t1 of 0.005 mm. The line width w1 of the first microstrip transmission line 115a at a first position m1 having a center frequency of 28 GHz and a reference impedance value of 50 ohms (Ω) was measured to have a size of 1.0 mm.

4 shows the frequency (GHz) -impedance measurement value Zc when the second microstrip transmission line 115b is inserted at a second depth t2 of 0.05 mm, which is relatively deeper than the first microstrip transmission line 115a. ). Referring to Fig. 4, the line width w2 at the second position m2 was measured to have a size of 0.84 mm. The second position m2 is a point having a center frequency of 28 GHz and a reference impedance value of 50 ohms (?). In Fig. 4, the impedance value at the first position m1 having the size of the line width of 1.0 mm was measured to have 44 ohms (Ω).

5 is a graph showing a frequency (GHz) of the third microstrip transmission line 115c when the third microstrip transmission line 115c is inserted at a third depth t3 of 0.1 mm, which is relatively deeper than the first or second microstrip transmission lines 115a and 115b. And the impedance measurement value Zc. Referring to Fig. 6, the line width w3 was measured to have a size of 0.68 mm at a third position (m3), which is a point having a center frequency of 28 GHz and an impedance value of 50 ohms (Ω). In this case, the impedance value at the first position m1 having the size of the line width of 1.0 mm is 39 (?), And the impedance value at the second position m2 having the line width size of 0.84 mm is 44 ohms ( Ω). Referring to FIG. 2, FIG. 4, and FIG. 6, the impedance measurement value and the linewidth size of the microstrip transmission line are shown. As the depth of insertion of the microstrip transmission line from the surface of the dielectric layer 105 becomes deeper, It can be confirmed that the size of the line width is reduced at the position.

On the other hand, when the microstrip transmission line is disposed on the surface of the dielectric layer, there is no difference in impedance size, so that the size of the line width is not affected. Hereinafter, a description will be made with reference to FIGS. 7 and 8. FIG. 7 and 8 are diagrams for explaining a microstrip transmission line disposed on the surface of a dielectric layer, except for the microstrip transmission line. Accordingly, the same constituent elements will be described using the same reference numerals.

Referring to FIGS. 7A and 8A, the microstrip transmission lines 215a and 215b are disposed on the surface of the upper surface 205a of the dielectric layer 205. FIG. A ground layer 210 may be disposed on the lower surface 205b of the dielectric layer 205. [ And each end of the microstrip transmission lines 215a and 215b is electrically connected to the input port 217 or the output port 219. [ Here, the dielectric layer 205 may be made of materials such as epoxy resin or composite resin including materials that are conventionally applied in a printed circuit board, for example, FR4. The microstrip transmission lines 215a and 215b may be arranged so as to protrude from the surface of the upper surface 205a of the dielectric layer 205 by predetermined heights h1 and h2. The microstrip transmission lines 215a and 215b may include a fourth microstrip transmission line 215a and a fifth microstrip transmission line 215b. The fourth microstrip transmission line 215a protrudes at a first height h1 of 0.005 mm and the fifth microstrip transmission line 215b protrudes at a second height h1 that is relatively thicker than the fourth microstrip transmission line 215a. (h2) of 0.05 mm.

7B shows a frequency (GHz) -impedance measurement value when the fourth microstrip transmission line 215a shown in FIG. 7A protrudes to the first height h1 of 0.005 mm Zc). The line width w4 of the fourth microstrip transmission line 215a was measured to have a size of 1.0 mm at a position n1 having a center frequency of 28 GHz and a reference impedance value of 50 ohms (?). 8B shows a frequency (GHz) -impedance measurement value when the fifth microstrip transmission line 215b shown in FIG. 8A protrudes to a second height h2 of 0.05 mm Zc). The line width w5 of the fifth microstrip transmission line 215b at a center n2 of 28 GHz and a reference impedance value of 50 ohms was measured to have a size of 1.0 mm. According to the measurement result, even when the thickness protruding from the surface of the dielectric layer 205 becomes thick, since the distance between the microstrip transmission line and the ground layer is the same, there is no change in the field size, It can be confirmed that no change occurs. Accordingly, the shape of the microstrip transmission line is inserted into the dielectric layer to change the size of the line width.

The microstrip transmission line described in FIGS. 1 to 6 may be applied as a signal path of various electronic devices. Microwave transistors, and other devices can be directly mounted to fabricate electronic devices, and a plurality of lines can be combined to form a resonator, a low pass filter, a high pass filter, a band pass filter a band pass filter, a band stop filter, or the like. Hereinafter, one application example in which a microstrip transmission line is used will be described with reference to the drawings. 9 to 12 are diagrams for explaining a low-pass filter having a microstrip transmission line according to an embodiment of the present invention. FIG. 10 is a cross-sectional view of the filter of FIG. 9 taken along the line I-I ', and FIG. 11 is a plan view of the filter of FIG. 9. And FIG. 12 is a graph showing changes in the frequency response characteristic of the low-pass filter of FIG.

9 through 11, a low-pass filter 300 according to an embodiment of the present invention includes a dielectric layer 305 and a plurality of dielectric layers 305 having different depths d1, d2, d3, d4, a microstrip transmission line 316 composed of signal transmission lines 316a, 316b, 316c, 316d, and 316e inserted into the ground layer 310 and a ground layer 310 may be disposed. The low-pass filter 300 according to an embodiment of the present invention is composed of a stepped impedance filter.

The dielectric layer 305 may comprise a top surface 305a and a bottom surface 305b opposite the top surface 305a. The dielectric layer 305 is formed of a multilayer structure formed by bonding a dielectric layer made of a single layer, a multilayer structure, or a single layer made of a glass material using an adhesive or the like. 316b, 316c, 316d, and 316e to be inserted under the surface of the dielectric layer 305 relative to the case where a material such as epoxy resin or composite resin including FR4 is used, the depth of the signal transmission lines 316a, 316b, 316c, And the line width size can be precisely controlled.

The ground layer 310 is made of a copper (Cu) material and can be disposed in contact with the lower surface 305b of the dielectric layer 305. [ In one example, the ground layer 310 may have a shape that covers the entire surface of the lower surface 305b of the dielectric layer 305. [ The microstrip transmission line 316 may be disposed between the input port 317 and the output port 319. One end of the microstrip transmission line 316 may be electrically connected to the input port 317 and the other end may be electrically connected to the output port 319. In one example, the input port 317 may be electrically connected to the ground layer 310 through one end of the microstrip transmission line 317 while penetrating the dielectric layer 305 in the thickness direction. One end of the output port 319 may be electrically connected to the ground layer 310 while penetrating the dielectric layer 305 in the thickness direction while being connected to one end of the microstrip transmission line 317.

The microstrip transmission line 316 includes signal transmission lines 316a, 316b, 316c, 316d and 316e inserted under the surface of the dielectric layer 305 with different depths d1, d2, d3, d4 and d5, And the like. The signal transmission lines 316a, 316b, 316c, 316d and 316e are connected to a first signal transmission line 316a, a second signal transmission line 316b, a third signal transmission line 316c, a fourth signal transmission line 316d And a fifth signal transmission line 316e. The first to fifth signal transmission lines 316a, 316b, 316c, 316d and 316e are inserted in the Y axis direction perpendicular to the upper surface 305 of the dielectric layer 305. [

The first signal transmission line 316a is disposed adjacent to the input port 317 and includes a first part 316a-1 inserted by a first depth d1 from the surface of the upper surface 305a of the dielectric layer 305 And a second part 316a-2 inserted by a second depth d2 that is deeper than the first part 316a-1.

The second signal transmission line 316b is spaced apart from the first signal transmission line 316a by a predetermined distance in the width direction of the dielectric layer 305, for example, in the Z axis direction, and is positioned relative to the first signal transmission line 316a And a third depth d3. The third signal transmission line 316c is spaced apart from the first signal transmission line 316a and the second signal transmission line 316b by a predetermined distance in the width direction of the dielectric layer 305, 1 signal transmission line 316a and a fourth depth d4 that is the same as the second signal transmission line 316b.

The fourth signal transmission line 316d is disposed adjacent the output port 319 and extends from the surface of the top surface 305a of the dielectric layer 305 to a fifth shallow depth d5). < / RTI > The first to fourth signal transmission lines 316a, 316b, 316c and 316d are electrically and physically connected by a fifth signal transmission line 316e transversely extending in the width direction of the dielectric layer 305 I have. The fifth signal transmission line 316e may be disposed at a position inserted by the sixth depth d6 in the depth direction of the dielectric layer 305. [ Here, the fifth signal transmission line 316e is connected to the first to fourth signal transmission lines 316a, 316b, 316c, and 316d from the first depth d1 to the fifth depth d5 to electrically and physically connect the first to fourth signal transmission lines 316a, And has a shallow sixth depth d6.

The low-pass filter of FIG. 9 is designed for the center frequency f1 of 2.2 GHz. Referring to FIG. 12, the transmission characteristic S21 indicating how much the signal reaches from the input port 317 to the output port 319 has a value close to 0 dB in the 2.2 GHz band of the center frequency f1. Also, according to the graph showing the reflection characteristic S11 of the input port 317, the lowest value of -40dB in the 2.2 GHz band is shown, and the input signal is transmitted to the output port 319 without being reflected Can be understood. As a result, it can be seen that the characteristics of a low-pass filter for filtering a frequency signal higher than 2.2 GHz to pass only a specific frequency of 2.2 GHz are shown. As described above, by the plurality of signal transmission lines 316-a, 316-b, 316-c, 316-d, 316-e inserted in the depth direction below the surface of the dielectric layer 305, Can be implemented.

As described in FIGS. 1, 3, and 5, when the depth of insertion of the microstrip transmission lines in the thickness direction of the dielectric layer changes, the distance between the bottom surface of each microstrip transmission line and the ground layer changes, As the field changes, the magnitude of the impedance changes. Accordingly, if the depth of insertion of the microstrip transmission lines in the thickness direction of the dielectric layer is adjusted, the characteristic impedance size of the signal line can be varied due to the capacitance change between the signal line and the ground, so that the line width of the microstrip transmission line can be controlled. For example, as the depth of insertion of the microstrip transmission line in the thickness direction of the dielectric layer becomes deeper, the capacitance value becomes larger and the characteristic impedance becomes smaller. That is, the line width of the microstrip transmission line can be reduced. The microstrip transmission line 316 composed of the first to fifth signal transmission lines 316a, 316b, 316c, 316d and 316e is connected to the first through fifth signal transmission lines 316a, 316b, 316c, 316d, The dielectric layer 305 can be adjusted to have different depths in the depth direction, and the designer can adjust the impedance to a target impedance.

11, by adjusting the depths of the first to fifth signal transmission lines 316a, 316b, 316c, 316d, and 316e to adjust the impedance magnitudes of the microstrip transmission line 316, And has a straight line shape having a predetermined line width w4 when viewed from the upper surface. The line width w4 of the microstrip transmission line 316 may be formed to have a linewidth size smaller than 1.0 mm, for example, 0.1 mm, which is the linewidth size of the microstrip transmission line protruding above the surface of the dielectric layer. In the embodiment of the present invention, the depths of the first through fifth signal transmission lines 316a, 316b, 316c, 316d, and 316e are adjusted to have the line width of the microstrip transmission line of 0.1 mm. However, the present invention is not limited thereto. For example, the linewidth of the microstrip transmission line may be adjusted so that the signal transmission lines are inserted in a direction perpendicular to the surface of the dielectric layer with a size of 0.01 to 10 mm.

Generally, the signal transmission line formed to protrude from the surface of the dielectric layer has a shape extending in the longitudinal direction of the dielectric layer on the surface of the dielectric layer for impedance matching. When forming the stepped impedance filter, the width of the signal transmission line is at least 15 mm As shown in FIG. On the contrary, the low-pass filter 300, which is a stepped impedance filter according to the embodiment of the present application, has a signal transmission line of 0.1 mm in width, which is smaller than the signal transmission line protruding from the surface of the dielectric layer . Accordingly, the size of the electronic component introducing the low-pass filter 300 according to the embodiment of the present application can also be reduced.

Meanwhile, the microstrip transmission line described in the embodiments of the present application may be applied as a means for matching the impedance between the electronic device to be introduced into the RF package and the metal wiring. The following description will be made with reference to the drawings. 13 is a view for explaining an RF package having a microstrip transmission line according to another embodiment of the present application.

13, the RF package 400 includes a package substrate 405 and an interposer laminate structure ML disposed on the package substrate 405 and having an RF chip 440 Lt; / RTI > The package substrate 405 includes a printed circuit board (PCB), and a plurality of connection pad portions 407 are disposed on one surface 405a of the package substrate 405. [ The connection pad portions 407 are formed of a copper (Cu) pattern wiring, and serve to electrically and signal connect the electronic elements disposed in the interposer stacked structure ML. The interposer laminate structure ML is formed of a multilayer structure and may have a structure in which five or more interposer layers 410, 420, 460, 480, 510, and 520 are stacked. In one example, the interposer layers 410, 420, 460, 480, 510, 520 comprise a glass material instead of silicon (Si) or FR4. Each of the interposer layers 410, 420, 460, 480, 510 and 520 is formed of a multilayer structure formed by bonding a dielectric layer made of a single layer, a multilayer structure or a single layer of glass using an adhesive or the like do.

The package substrate 405 and the interposer stacked structure ML can be electrically connected to each other through the first external connection element 425 disposed on the connection pad portion 407. [ The first external connection element 425 may include a solder ball. The first interposer layer 410 disposed at the lowermost part of the interposer laminate structure ML includes a first surface 410a and a second surface 410b facing the first surface 410a.

The first interposer layer 410 may include a penetrating electrode 415 penetrating from the first surface 410a toward the second surface 410b. One end of the penetrating electrode 415 may be connected to the first bonding pad portion 420 disposed below the surface of the second surface 410b of the first interposer layer 410. [ The first bonding pad 420 may be formed by etching a first interposer layer 410 made of a glass material and plating the first interposer layer 410 with a metal material such as copper. The first bonding pad unit 420 includes an RF chip 440 and the like which are connected to the first external connection element 425 and disposed on the package substrate 405 and another layer of the interposer laminated structure ML To the electronic device.

A second interposer layer 420 is disposed on the first surface 410a of the first interposer layer 410. [ One surface 420b of the second interposer layer 420 is disposed in contact with the first surface 410a of the first interposer layer 410. A second bonding pad portion 430 formed through an etching process and a plating process may be disposed under the surface of one surface 420b of the second interposer 420. [ The second bonding pad unit 430 may be connected to the other end of the penetrating electrode 415 connected to the first bonding pad unit 420 and the other end thereof. The second interposer layer 420 may include a first ground plane 430.

The first ground plane 430 may be disposed on a space formed by etching a predetermined depth from the surface of the other surface (not shown) opposite to the first surface 420b of the second interposer layer 420. The space formed in the second interposer layer 420 may be formed through a laser etching method. The first ground plane 430 is made of a conductive material such as a metal material and serves to generate heat generated from the RF chip 440 disposed at the upper portion. The thickness t 'of the first ground plane 430 may be increased by increasing the etch thickness of the second interposer layer 420 to secure the space in which the first ground plane 430 is to be disposed It is possible to improve the heat generation characteristic. In another example, a cooling material may be inserted instead of a conductor material at a location where the first ground plane 430 is located, although not shown in the figures.

An RF chip 440 is disposed on the first surface 430a of the first ground plane 430. [ In one example, the RF chip 440 may be disposed in a cavity formed by etching a second surface 460b of the third interposer fluid layer 460 to a predetermined depth. A third bonding pad portion 470 may be disposed on the first surface 460a of the third interposer layer 460. [ The third bonding pad portion 470 may be electrically connected to one side 440a of the RF chip 440 through a second external connection element 450. [

A fourth interposer layer 480 may be disposed on the first surface 460a of the third interposer layer 450. The fourth interposer layer 480 includes a first side 480a and a second side 480b opposite the first side 480a. A feeding line 490 may be inserted under the surface of the first surface 480a of the fourth interposer layer 480. The feed line 490 may be connected to the RF chip 440 via the via electrode 475. Here, a portion of the third bonding pad portion 470 connected to the RF chip 440 may be extended to be connected to the via electrode 475. The feeding line 490 is a wiring for supplying the output of the transmitter, for example, the RF chip 440 to the antenna. If the impedance matching between the feeding line 490 and the RF chip 440 is not made, The antenna may not be properly supplied to the antenna, so that the propagation may be weak.

Accordingly, in the embodiment of the present application, the micro-channels including the signal transmission lines da, db, dc, and dd inserted in the feed line 490 at portions adjacent to the RF chip 440, The strip transmission line 500 is disposed as an impedance matching means. Although four signal transmission lines (da, db, dc, dd) are shown in the embodiment of the present application, the present invention is not limited thereto, and may be modified for a desired impedance size by a designer. As the field type changes according to the difference in distance between the bottom surface of the signal transmission lines (da, db, dc, dd) of the microstrip transmission line 500 and the first ground plane 430, Matching is possible.

A fifth interposer 510 and a sixth interposer 520 may be sequentially disposed on the fourth interposer 480. The fifth interposer layer 510 may serve as a buffer layer between the fourth interposer layer 480 and the sixth interposer layer 520. The sixth interposer layer 520 disposed on the uppermost layer of the interposer laminate structure ML comprises a top surface 520a and a lower surface 520b opposite the top surface 520a. An antenna 530 having a predetermined depth is inserted under the surface of the upper surface 520a of the sixth interposer 520 and a predetermined depth is formed below the surface of the lower surface 520b of the sixth interposer 520. [ The second ground plane 520b is inserted. The second ground plane 520b includes a hole shaped slot 525c for guiding the output of the RF chip 440 to emit the signal transmitted to the antenna 530 and a region where the slot 525c is formed And metal pieces 525a and 525b designating the metal pieces 525a and 525b.

The RF package 400 according to the embodiment of the present application can reduce the overall package size by etching a portion below the surface of the dielectric layer made of a glass material and forming a copper wire filling the etched portion. In addition, the thickness of the first ground plane 430 to be introduced for the heat generation of the RF chip 440 can be varied, and the heat generation characteristic can be improved.

100: substrate 105, 305: dielectric layer
110, 310: ground layer
115a, 115b, 115c, 317, 500: microstrip transmission line
117, 317: input port 119, 319: output port
w1, w2, w3, w4: line width of the microstrip transmission line
400: RF package 440: RF chip
ML: Interposer laminated structure

Claims (14)

A dielectric layer including a top surface and a bottom surface facing the top surface;
A microstrip transmission line extending in a thickness direction of the dielectric layer, the microstrip transmission line being inserted under the surface of the upper surface of the dielectric layer so as to have different depths and being connected to each other; And
And a ground layer disposed in contact with a lower surface of the dielectric layer,
Wherein the microstrip transmission line has a flat shape having the same level as the upper surface of the dielectric layer. The method according to claim 1,
The dielectric layer comprising: an input port embedded within the dielectric layer in contact with one end of the signal transmission line; And
And a microstrip transmission line disposed at a position spaced apart from the input port by a predetermined distance and embedded in the dielectric layer in contact with the other end of the signal transmission line. The method according to claim 1,
The dielectric layer may include a microstrip transmission line formed of a multilayer structure formed by bonding a dielectric layer made of a single layer, a multilayer structure, or a single layer of glass, using an adhesive instead of an epoxy resin or a composite resin including FR4 One filter. The method according to claim 1,
Wherein the signal transmission lines are arranged with a predetermined distance in the width direction of the dielectric layer. 2. The apparatus of claim 1,
A first signal transmission line having a stepped shape by a first part inserted by a first depth in a vertical direction from a surface of the upper surface of the dielectric layer and a second part inserted by a second depth deeper than the first part;
A first signal transmission line, a second signal transmission line, and a second signal transmission line, the second signal transmission line being spaced apart from the first signal transmission line by a predetermined distance in a width direction of the dielectric layer, Transmission lines;
A second signal transmission line which is disposed at a predetermined distance in the width direction of the dielectric layer and is vertically inserted from a surface of the upper surface of the dielectric layer by a fourth depth that is relatively deeper than the first signal transmission line, Transmission lines;
A third signal transmission line disposed at a predetermined distance in the width direction of the dielectric layer from the third signal transmission line, and a fourth signal inserted in a vertical direction from a surface of the upper surface of the dielectric layer by a fifth depth, Transmission lines; And
And a fifth signal transmission line interconnecting the first through fourth signal transmission lines in a straight line in the width direction of the dielectric layer. 6. The method of claim 5,
Wherein the fifth signal transmission line has a microstrip transmission line inserted in a vertical direction from the surface of the upper surface of the dielectric layer so as to have a relatively shallower depth than the first through fourth signal transmission lines. The method according to claim 1,
Wherein the microstrip transmission line has a cross section having a stepped shape and a microstrip transmission line having a straight line shape crossing the dielectric layer when viewed from above. 8. The method of claim 7,
Wherein the line width of the microstrip transmission line is in the range of 0.01 to 10 mm. delete The method according to claim 1,
Wherein the signal transmission lines extend in a thickness direction of the dielectric layer and have different depths from each other, and the distance from the ground layer is different from that of the microstrip transmission line. A package substrate; And
A plurality of signal transmission lines disposed on the package substrate and having different depths in a portion adjacent to the RF chip to match an impedance difference between the RF chip and the feeder line, the RF chip including a feed line and an antenna, An RF package having a microstrip transmission line including an interposer laminate structure inserted beneath the surface. 12. The method of claim 11, wherein the interposer laminate structure comprises:
A first interposer layer disposed on the lowermost layer of the interposer laminate structure and disposed on the package substrate and having a penetrating electrode electrically connecting another interposer laminate structure and the package substrate;
A second interposer layer disposed on the first interposer layer and having a first ground plane;
A third interposer layer disposed on the second interposer layer and including a space provided with the RF chip;
A plurality of feed lines disposed on the third interposer layer and including the feed lines, wherein the feed lines are inserted in portions adjacent to the RF chip with different depths to match impedances between the feed lines and the RF chips, A fourth interposer layer comprising signal transmission lines;
A fifth interposer layer disposed on the fourth interposer layer; And
A second ground located at an uppermost layer of the interposer laminate structure and including an upper surface and an upper surface and a lower surface facing the lower surface, wherein an antenna is inserted under the surface of the upper surface, And a sixth interposer layer having a flat surface. 13. The method of claim 12,
Each of the first to sixth interposer layers may include an RF package having a microstrip transmission line having a multi-layer structure formed by bonding a dielectric layer made of a single layer, a multi-layer structure or a single layer of glass using an adhesive or the like. . 13. The method of claim 12,
Wherein the signal transmission lines are inserted under the surface of the fourth interposer layer to have different depths from each other and have different distances from the first ground plane.

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