KR101870348B1 - Multilayer structure to increase hall effect and three dimensional hall effect sensor using this - Google Patents

Abstract

The present invention relates to a lamination structure of a hole plate (11A to 11D) for enhancing a Hall effect and a three-dimensional hall sensor using the same. The present invention relates to a semiconductor device comprising a metal layer (10, 110) composed of a plurality of layers and connected to each other through a via hole and applied current in a direction crossing the metal layers (10, 110) A direction changing layer 30, 130 formed of a plurality of layers stacked in the same direction, each layer including a pair of separated metal layers 31A to 31D connected to each other through a via hole; The first and second bridges 50A and 50B are electrically connected to any one of the first and second directional conversion layers 30 and 130 so that current flows in opposite directions to the metal layers 10 and 110 and the directional conversion layers 30 and 130, 50B. According to the present invention, since the effective section in which electrons can move along the direction in which the hole plates 11A to 11D are stacked is sufficiently secured, the measurement of the magnetic field acting in the planar direction is sufficiently performed It becomes possible.

Description

[0001] The present invention relates to a Hall plate laminate structure for enhancing a Hall effect and a three-dimensional Hall sensor using the same,

More particularly, the present invention relates to a hole plate structure for sensing a magnetic field in a horizontal direction and a three-dimensional Hall sensor using the same.

Techniques for detecting the in-plane magnetic field of a semiconductor wafer have been developed, and a hall effect is widely used for such magnetic field detection. Hall effect means a phenomenon in which an electromotive force is generated in a direction orthogonal to a current and a magnetic field when a magnetic field is applied in a direction perpendicular to a current. The Hall sensor measures the electromotive force in the plane of the wafer, .

In order to utilize the Hall effect, a predetermined path through which a current can flow can be secured. Therefore, it is relatively easy to measure the magnetic field generated in the thickness direction orthogonal to the plane direction of the wafer, but it is difficult to measure the magnetic field generated in the direction perpendicular to the wafer, that is, the longitudinal direction of the wafer. This is because the integrated circuit device (IC) has a very thin thickness, and it is difficult to secure a sufficient distance for electrons to move in the thickness direction.

In order to solve this problem, a conventional magnetic field sensor uses a ferromagnetic material to bend a magnetic field to change a path, or to connect a sensing device in a vertical direction in a subsequent process. However, this is complicated in structure and manufacturing process, And linearity is low, so that it is difficult to measure accurately.

U.S. Patent No. 9,312,473

SUMMARY OF THE INVENTION The present invention has been made in order to solve the problems of the prior art as described above, and it is an object of the present invention to provide a method of manufacturing a plasma display panel in which a hole effect is accumulated by sufficiently laminating a hole plate, So that it can be secured.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a metal layer formed of a plurality of layers and connected to each other through a via hole, A direction changing layer composed of a plurality of layers stacked in the same direction as the metal layer, each layer being composed of a pair of separated metal layers connected to each other through a via hole; And a bridge that electrically connects any one of the layers to allow the current to flow in opposite directions to the metal layer and the direction switching layer.

When the magnetic field is applied in a direction orthogonal to the direction of the current supplied to the metal layer, the bridge is deflected along the direction in which the current is applied, and the charge is deflected And is transmitted to the direction switching layer through the bridge.

The metal layer and the direction switching layer are formed of the same layer at the same height, and the bridge connects either the upper end or the lower end of the metal layer and the direction switching layer.

The bridge includes a first lower bridge connecting between the metal layer and the direction switching layer and a first upper bridge located on the opposite side of the first lower bridge and connecting between the direction switching layer and neighboring other metal layers, And the same structure is repeatedly formed and extended in one direction.

The metal layer is formed by laminating hole plates extending in a direction orthogonal to the direction of current transmission, and via holes are formed between the laminated hole plates to electrically connect the holes.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a silicon wafer layer; and a sensing means stacked on the silicon wafer layer, wherein the sensing means comprises a plurality of layers, A metal layer to which a current is applied and a plurality of layers stacked in the same direction as the metal layer at a position adjacent to the metal layer, wherein each layer is composed of a pair of separated metals connected to each other via via holes and spaced apart from each other A direction switching layer and a bridge electrically connecting one of the metal layers and the direction switching layer so that current flows in opposite directions to the metal layer and the direction switching layer.

When the magnetic field is applied in a direction orthogonal to the direction of the current supplied to the metal layer, the bridge is deflected along the direction in which the current is applied, and the charge is deflected And is transmitted to the direction switching layer through the bridge.

The bridge includes a first lower bridge connecting between the metal layer and the direction switching layer and a first upper bridge located on the opposite side of the first lower bridge and connecting the direction switching layer and neighboring other metal layers Wherein the sensing means comprises a metal layer, a first lower bridge-direction switching layer, and a first upper bridge structure continuously extending in one direction.

The hole plate lamination structure for increasing the hole effect according to the present invention as described above and the three-dimensional hall sensor using the same have the following effects.

According to the present invention, since the effective section in which electrons can move along the direction in which the hole plates are stacked is sufficiently secured, it is possible to sufficiently measure the magnetic field acting in the plane direction by sufficiently accumulating the Hall effect even in a thin thickness of the integrated circuit .

Particularly, the present invention does not require the sensing device to be installed in a vertical direction by adding a ferromagnetic material or performing a post-process, and can be easily implemented using a conventional metal layer forming process (for example, a metal layer forming process for routing) , The manufacturing process is simplified and the manufacturing cost is reduced.

In addition, when the electrons move in the opposite direction through the directional switching layer together with the metal layer for accumulating the Hall effect, efficiency is improved by cutting off the electron movement in the left and right direction so that the Hall effect is not canceled, .

According to the present invention, it is possible to measure the magnetic field both in the vertical direction and in the horizontal direction by securing a sufficient electron movement effective interval in the thin integrated circuit, thereby improving the functionality and compatibility of the sensor.

1 is a conceptual diagram for explaining a hall effect concept according to the present invention;
2 is a conceptual view showing an embodiment of a hole plate laminated structure for increasing a hole effect according to the present invention.
FIG. 3 is a conceptual view schematically showing a structure in which the structure of FIG. 1 is continuously connected. FIG.
4 is a conceptual diagram illustrating a process in which a hall effect is accumulated according to the present invention;

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference symbols as possible even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the understanding why the present invention is not intended to be interpreted.

In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected," "coupled," or "connected. &Quot;

The present invention relates to a lamination structure of a hole plate (11A to 11D) for enhancing a Hall effect and a three-dimensional hall sensor using the same. The present invention is a structure for sensing a magnetic field using a Hall effect, and can be used as a sensing device in various fields. For example, it can be applied to a variety of applications such as position sensing, DC / AC current sensing, measuring the size of a magnetic field, measuring the number of revolutions of a rotating body, and a non-contact type switch. Hereinafter, a basic sensing function will be described.

Figure 1 shows a basic structure for generating a Hall effect. As a result, when a current I is applied to one of the hole plates 11A to 11D constituting the present invention and the magnetic field B is formed in a direction orthogonal thereto, the electromotive force Vh). More precisely, this Hall effect means that the Lorentz force is generated in a direction orthogonal to both the current and the magnetic field according to Fleming's left-hand rule, thereby deflecting the charge. And the electromotive force is generated in a direction orthogonal to both the current and the magnetic field due to the deflection of such a charge.

In the present invention, this is for the purpose of increasing the deflection of the charge, that is, the deflection of electrons. In the laminated structure of the hole plates 11A to 11D of the present invention, charge is deflected in one direction in the course of current flowing downward through the metal layers 10 and 110, and the bridge and direction switching layers 30 and 130 are shifted The electrons are deflected in one direction while moving the next metal layer 10 and 110, resulting in accumulation of electromotive force. Hereinafter, the structure of the present invention will be described in detail.

First, in the present invention, a plurality of hole plates 11A to 11D are laminated to form one metal layer 10, The hole plates 11A to 11D are made of metal and may be part of a metal layer stacked on the upper surface of a silicon wafer (not shown). The hole plates 11A to 11D are stacked in the vertical direction as shown in FIG. 2. In this embodiment, a total of four hole plates 11A to 11D are stacked. The number of the hole plates 11A to 11D to be stacked is not necessarily limited to four, and various modifications are possible corresponding to the number of metal layers formed in the process of manufacturing the integrated circuit. In the present invention, since the metal layers 10 and 110 are composed of a plurality of metal layers, the first metal layer 10 and the second metal layer 110 will be referred to as'

The hole plates 11A to 11D constituting the first metal layer 10 are connected via via holes. The via holes are formed in an insulating layer (not shown), and an insulating layer is formed between the hole plates 11A to 11D. The via holes are formed in the insulating layer and electrically connected between the hole plates 11A to 11D located above and below the via hole through the conductive structure 17 provided in the via hole. The via holes may be formed together in the process of manufacturing the metal layer and the insulating layer. Reference numerals 11A to 11D denote first to fourth hole plates 11A to 11D, respectively. Each of the hole plates 11A to 11D may be made of the same material but may be different from each other because it is made of the same material as the metal layer constituting the integrated circuit.

A current (I) is applied to the first metal layer (10). The current is applied from the upper side to the lower side with respect to the direction crossing the first metal layer 10, that is, the figure. At this time, if the magnetic field B is formed in the direct circuit in the direction perpendicular thereto, the force Fm is applied in the direction orthogonal to the current I and the magnetic field B (from left to right in FIG. 2) And the charge is deflected in one direction. If the overall height of the first metal layer 10 is low, the degree of deflection of such charges is very small, so that a meaningful value will not be obtained. However, in the present invention, electrons are accumulated in a plurality of hole plates 11A to 11D 1 Metal layer 10 can be moved to one side in the process of moving. Of course, since the overall height of the first metal layer 10 is very low, it is necessary to increase the deflection of these charges through the plurality of additional metal layers 110 and 210 along with the first metal layer 10.

A direction change layer (30, 130) is provided at a position adjacent to the first metal layer (10). The direction switching layers 30 and 130 extend in a direction parallel to the first metal layer 10 and are formed by stacking a plurality of separation metals 31A to 31D. The direction switching layers 30 and 130 are connected to the first metal layer 10 to continuously flow current, and are provided on a silicon wafer in the same manner as the first metal layer 10. Each of the separation metals 31A to 31D constituting the direction conversion layers 30 and 130 is made of a metal material and may be a part of a metal layer stacked on the upper surface of a silicon wafer (not shown). The direction switching layers 30 and 130 are stacked in the vertical direction as shown in FIG. 2. In this embodiment, a total of four separation metals 31A to 31D are stacked. The number of the separation metals 31A to 31D is not necessarily limited to four, and various modifications are possible corresponding to the number of metal layers formed in the process of manufacturing the integrated circuit. Meanwhile, in the present invention, since the direction switching layers 30 and 130 are composed of a plurality of direction switching layers, the first direction switching layer 30 and the second direction switching layer 130 will be referred to for convenience.

The first direction switching layer 30 moves electrons in a direction opposite to the first metal layer 10. More precisely, although the current applied to the first metal layer 10 flows from the top to the bottom, the current flows from the bottom to the top through the first direction switching layer 30. This is because the first lower bridge 50A connecting the first metal layer 10 and the first direction switching layer 30 is provided at the lower side.

At this time, since the first direction switching layer 30 flows a current in a direction opposite to that of the first metal layer 10, the direction of the Hall effect is also reversed. As shown in FIG. 2, the Hall effect generated in the first direction switching layer 30 occurs from right to left with reference to the drawing. Therefore, the hole effect generated in the first metal layer 10 may be canceled. However, in the present invention, each of the separation metals 31A to 31D constituting the first direction conversion layer 30 is formed as a pair separated from each other. Therefore, the period in which the Hall effect acts in the opposite direction is very short, so that the charge is transferred upward in a deflected state without canceling the deflection of the charge.

More precisely, as shown in FIG. 2, the pair of separating metals 31A to 31D, for example, the lowermost first separating metal 31A is constituted by a pair of disconnected portions. The second to fourth separation metals 31B to 31D are similarly formed of a pair of disconnected portions, and a separation region A is formed therebetween. Therefore, since the interval in which the Hall effect acts in the opposite direction is limited within each of the separation metals 31A to 31D, the previously deflected charge can move upward while maintaining the deflected state. As shown in FIG. 2, the charges transferred to the fourth separating metal 31D at the uppermost position are deflected to have different sizes (?) In the left and right, and the Hall effect can be maintained.

The separation metals 31A to 31D are also connected to each other through a via hole. Like the via hole of the first metal layer 10, the via hole is formed in an insulating layer (not shown) between the separating metals 31A to 31D, and the insulating layer is formed between the separating metals 31A to 31D do. The via holes are formed in the insulating layer and electrically connected between the separating metals 31A to 31D located above and below the via hole through the conductive structure 37 provided in the via hole. The via holes may be formed together in the process of manufacturing the metal layer and the insulating layer.

As a result, the metal layers 10 and 110 and the direction conversion layers 30 and 130 are formed of the same layer at the same height.

Meanwhile, first bridges (50A, 50B) are provided between the first metal layer (10) and the first direction switching layer (30). The first bridge 50A and the second bridge 50B electrically connect any one of the first metal layer 10 and the first switch layer 30 to electrically connect the first metal layer 10, In the first direction switching layer 30, current flows in mutually opposite directions. At the same time, the first bridges 50A and 50B electrically connect the first direction conversion layer 30 and the neighboring metal layer 110. The first bridges 50A and 50B are also formed of a metal material and are mounted on a silicon wafer in the same manner as the first metal layer 10 and the first direction switching layer 30. The first bridges 50A and 50B may be part of a metal layer stacked on the upper surface of a silicon wafer (not shown).

As shown in FIG. 2, the first bridges 50A and 50B are composed of a pair 50A and 50B. The first bridge 50A includes a first lower bridge 50A and a first upper bridge 50B. The first lower bridge 50A connects the first metal layer 10 and the first direction Layer 30 and the first upper bridge 50B is located on the opposite side of the first lower bridge 50A and the first direction switching layer 30 is connected to another neighboring metal layer, 0.0 > 110 < / RTI > As will be described below, when this same structure is repeatedly formed and extended in one direction, the hole effect can be increased. For reference, the names of the first lower bridge 50A and the first upper bridge 50B constituting the first bridges 50A and 50B are given based on FIG. 2, The first lower bridge 50A may be located above the first upper bridge 50B if the hole plate laminated structure is formed in the opposite direction.

Meanwhile, the first lower bridge 50A is divided into two branches, which are connected to the pair of first separation metals 31A, respectively. As a result, if a magnetic field is applied in a direction orthogonal to the direction of the current supplied to the first metal layer 10, the charge is deflected along the direction in which the current is applied, and the first lower bridge 50A To the first direction switching layer 30 through the first direction switching layer 30.

3, one end of the first upper bridge 50B is connected to the fourth separation metal 31A to 31D located on the outermost layer along the current flowing direction of the first direction switching layer 30, And another metal layer, that is, a second metal layer 110, is connected to the other end of the first upper bridge 50B. Such a structure is repeatedly formed and elongated in one direction. That is, the nth metal layer-the nth lower bridge-the nth direction switching layer-the nth upper bridge-n + 1 metal layer structure continuously extends in one direction to constitute the present invention.

With this structure, the effective period for generating the Hall effect is greatly increased, and the charge can be accumulated. As a result, the Hall effect is increased and the efficiency of the magnetic field detection sensor is improved. Of course, the present invention can be precisely sensed because the metal layer is a metal medium and the metal layer (10, 110) and the direction switching layer (30, 130) do not have a linear value. As shown in Fig. 3, the deflected charges accumulated at the two separation metals 31A to 31D are finally different in size (? N), and the Hall effect can be increased.

4, the charge generated through the hole effect (the direction of arrow 1) while passing through the first metal layer 10 is transmitted through the first lower bridge 50A of the first bridges 50A and 50B And is connected to the first direction switching layer 30. The first direction switching layer 30 is separated, and the electric charge moving in the upper direction (the direction of arrow 1 ') maintains the Hall effect.

The current flows again in the direction of the second metal layer 110 through the first upper bridge 50B and further moves along the second metal layer 110 in the lower direction (the direction of arrow 2) to further deflect the charge. In the process of flowing from the lower portion of the second direction switching layer 130 in the upper direction (the direction of arrow 2 ') after the charge moves in the deflected state through the second lower bridge 150A of the second bridges 150A and 150B, It is not deflected in the opposite direction, so that cancellation of the Hall effect is prevented. And current flows to the adjacent third metal layer 310 through the second upper bridge 150B. As the process is repeated, the Hall effect is further increased and the Hall effect is increased.

While the present invention has been described in connection with what is presently considered to be the most practical and preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. That is, within the scope of the present invention, all of the components may be selectively coupled to one or more of them. Furthermore, the terms "comprises", "comprising", or "having" described above mean that a component can be implanted unless otherwise specifically stated, But should be construed as including other elements. All terms, including technical and scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs, unless otherwise defined. Commonly used terms, such as predefined terms, should be interpreted to be consistent with the contextual meanings of the related art, and are not to be construed as ideal or overly formal, unless expressly defined to the contrary.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the scope of the present invention but to limit the scope of the technical idea of the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

10: first metal layer 30: first direction switching layer
50A, 50B: first bridge 110: second metal layer
130: second direction switching layer 150A, 150B: second bridge

Claims (8)

A metal layer which is composed of a plurality of layers and is connected to each other via a via hole and current is applied in a direction crossing the via layers,
A direction changing layer composed of a plurality of layers stacked in the same direction as the metal layer at a position adjacent to the metal layer, each layer being composed of a pair of separated metals connected to each other via via holes,
And a bridge for electrically connecting any one of the layers and the direction switching layer to the metal layer and the direction switching layer so that current flows in opposite directions to each other, rescue.
The method as claimed in claim 1, wherein the bridge is connected to the pair of separation metals, and when a magnetic field is applied in a direction orthogonal to the direction of the current supplied to the metal layer, the charge is deflected along the direction in which the current is applied , And a charge is transferred to the direction switching layer through the bridge in a deflected state.
[2] The apparatus of claim 1, wherein the metal layer and the direction switching layer are formed of the same layer at the same height, and the bridge includes a hole for increasing the hole effect connecting one of the upper and lower ends of the metal layer and the direction switching layer. Plate laminated structure.
The apparatus of claim 1, wherein the bridge comprises a lower bridge connecting between the metal layer and the direction switching layer, and an upper bridge located on the opposite side of the lower bridge and connecting between the direction switching layer and neighboring other metal layers And a hole plate laminated structure for increasing the hole effect in which the same structure is repeatedly formed and extends in one direction.
The metal layer according to any one of claims 1 to 4, wherein the metal layer is formed by laminating hole plates extending in a direction orthogonal to the direction of current transmission, and a via hole is formed between the laminated hole plates, Hall plate laminated structure for electrically connecting hole effect.
A silicon wafer layer,
And a sensing means laminated on the silicon wafer layer,
The sensing means
A metal layer which is composed of a plurality of layers and connected to each other through a via hole and to which a current is applied across the metal layer,
A direction changing layer composed of a plurality of layers stacked in the same direction as the metal layer at a position adjacent to the metal layer, each layer being composed of a pair of separated metals connected to each other via via holes,
And a bridge for electrically connecting any one of the layers and the direction switching layer to the metal layer and the direction switching layer so that current flows in opposite directions to each other, Hall sensor.
The method of claim 6, wherein the bridge is connected to the pair of separation metals, and when a magnetic field is applied in a direction orthogonal to the direction of the current supplied to the metal layer, the charge is deflected along the direction in which the current is applied And the charge is transferred to the direction switching layer through the bridge in a state where the charge is deflected.
[7] The method as claimed in claim 6 or 7, wherein the bridge comprises: a lower bridge connecting the metal layer and the direction switching layer; and a bridge connecting the direction switching layer and the neighboring other metal layers, The three-dimensional Hall sensor according to claim 1, wherein the sensing means includes a metal layer, a lower bridge-direction conversion layer, and an upper bridge structure continuously extending in one direction.

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