KR101842121B1 - Apparatus for treating substrate and method for controlling driving speed thereof - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a driving speed control method thereof. A substrate processing apparatus according to an embodiment of the present invention includes: a processing unit having a processing region for processing a substrate; A transport unit moving along the transport area and transporting the substrate to the processing unit; And a controller for controlling the speed of the transfer unit, wherein the controller divides the entire area including the processing area and the transfer area into a plurality of divided areas, and sets the speed of the transfer unit in each of the divided areas as It is possible to calculate the time required for transporting the substrate and the processing of the substrate when the same is maintained and controlling the speed of the transport unit differently according to the plurality of divided regions according to the calculated time.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus,

The present invention relates to a substrate processing apparatus and a driving speed control method thereof.

The process of processing a substrate, such as forming a circuit pattern on a substrate such as a silicon wafer or glass, is performed by a substrate processing apparatus manufactured in accordance with the requirements of the process. The substrate processing apparatus includes various modules necessary for processing the substrate.

For example, when lithography is performed to form a circuit pattern on a substrate, the substrate processing equipment includes an application module for applying a photosensitive material to the substrate, an exposure module for exposing the substrate to which the photosensitive material is applied, And a module for performing a unit process necessary for lithography, such as a development module for performing a lithography process.

Various modules provided in such a substrate processing apparatus include a substrate processing unit having a processing region having a processing region for processing a substrate for each module, and a transporting unit for transporting the substrate to the substrate processing unit.

The substrate processing process by the substrate processing facility is a series of organic processes in which a plurality of substrates are processed according to a predetermined recipe, and the modules in the facility receive the substrate from the module that performs the process corresponding to the previous step in the order of the process, And transfers the substrate to the module for performing the process corresponding to the next step.

In this manner, in performing substrate processing for each module, the same driving speed is applied to each module at a predetermined driving speed in spite of the fact that the time required for carrying and processing substrates for each module is different in the past, The unit is driven unnecessarily at a high speed, shortening the life span of the parts and increasing the probability of occurrence of defects.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate processing apparatus including a driving speed controller that minimizes a driving speed for each module within a range in which a production amount is maintained, and a driving speed control method thereof.

The problems to be solved by the present invention are not limited to the above-mentioned problems. Other technical subjects not mentioned will be apparent to those skilled in the art from the description below.

A substrate processing apparatus according to an embodiment of the present invention includes: a processing unit having a processing region for processing a substrate; A transport unit moving along the transport area and transporting the substrate to the processing unit; And a controller for controlling the speed of the transfer unit, wherein the controller divides the entire area including the processing area and the transfer area into a plurality of divided areas, and sets the speed of the transfer unit in each of the divided areas as It is possible to calculate the time required for transporting the substrate and the processing of the substrate when the same is maintained and controlling the speed of the transport unit differently according to the plurality of divided regions according to the calculated time.

In one embodiment, the speed of the transport unit may be controlled to be slower than the calculated length of the divided area in the above-mentioned divided area where the calculated time is short.

In one embodiment, the speed of the transport unit in the plurality of divided areas can be controlled by multiplying by the ratio of the calculated time in each divided area to the longest of the calculated times in the plurality of divided areas have.

Another substrate processing apparatus according to another embodiment of the present invention includes: a plurality of processing modules including a substrate processing unit and a transfer unit; And a controller for controlling a driving speed of the transfer unit, wherein the controller comprises: a time measuring unit for measuring a time required for transferring the substrate and processing the substrate in each of the processing modules; And a speed adjusting unit for adjusting the driving speed of the transporting unit for each of the process modules based on the time measured by the time measuring unit.

In one embodiment, the speed regulator may lower the driving speed of the transfer unit of the remaining process module other than the process module having the longest time among the plurality of process modules.

In one embodiment, the speed controller may be adjusted by multiplying the driving speed of the transport unit by the process module by the ratio of the time in each process module to the longest time measured in the respective process modules.

A driving speed control method according to an embodiment of the present invention is a driving speed control method for a substrate processing apparatus including a plurality of process modules each having a substrate processing unit and a transport unit, Measuring a time required for processing the substrate; And adjusting the driving speed of the transport unit for each process module based on the measured time.

In one embodiment, the step of adjusting the driving speed of the transfer unit may lower the driving speed of the transfer unit of the remaining process module other than the process module having the longest time among the plurality of process modules.

In one embodiment, the step of adjusting the driving speed of the transport unit may be adjusted by multiplying the time of each process module with respect to the longest time of the plurality of process modules.

According to an embodiment of the present invention, the driving speed of each process module is controlled within a range in which the production amount of the substrate processing apparatus is maintained, so that the driving speed of each process module is minimized, thereby extending the service life of the component, have.

The effects of the present invention are not limited to the effects described above. Unless stated, the effects will be apparent to those skilled in the art from the description and the accompanying drawings.

1 is a top view of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a view of the facility of Fig. 1 viewed from the direction AA.
Fig. 3 is a view of the equipment of Fig. 1 viewed from the BB direction.
4 is a block diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.
5 is a flowchart illustrating a method of controlling a driving speed of a substrate processing apparatus according to an embodiment of the present invention.

Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Although not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not. The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention.

In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. Also, 'equipped' and 'possessed' should be interpreted in the same way.

The facility of this embodiment is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facilities of this embodiment are used to perform a coating process and a developing process on a substrate. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

1 to 3 are views schematically showing a substrate processing apparatus 1 according to an embodiment of the present invention. Fig. 1 is a view of the substrate processing apparatus 1 viewed from above, Fig. 2 is a view of the apparatus 1 of Fig. 1 viewed from the AA direction, Fig. 3 is a view of the apparatus 1 of Fig. to be.

Referring to FIGS. 1 to 3, the substrate processing apparatus 1 includes a plurality of process modules and a controller 600. The plurality of process modules includes a load port 100, an index module 200, a buffer module 300, an application and development module 400, and an interface module 700. The plurality of process modules includes a substrate processing unit and a transport unit, and the controller 600 controls the driving speed of the transport unit of each process module. The load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 are sequentially arranged in one direction in one direction.

Hereinafter, a direction in which the load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700 are disposed is referred to as a first direction 12, A direction perpendicular to the first direction 12 is referred to as a second direction 14 and a direction perpendicular to the first direction 12 and the second direction 14 is referred to as a third direction 16 .

The wafer W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the buffer module 300, the application and development module 400, the interface module 700, and the utilization rate calculation module 800 will be described in detail.

The load port 100 has a mounting table 120 on which a cassette 20 accommodating wafers W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 1, four placement tables 120 are provided.

The index module 200 transfers the wafer W between the cassette 20 and the buffer module 300 placed on the table 120 of the load port 100. The index module 200 includes a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is a four-axis drive system in which the hand 221 directly handling the wafer W is movable in the first direction 12, the second direction 14 and the third direction 16, . The index robot 220 includes a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The buffer module 300 includes a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of wafers W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 332. The housing 331 is configured such that the index robot 220, the first buffer robot 360 and the development robot 482 of the developing module 402 described later attach the wafer W to the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the wafer W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chambers 350 cool the wafers W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the wafer W is placed and a cooling means 353 for cooling the wafer W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the wafer W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 described later can carry the wafers W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The coating and developing module 400 performs a process of applying a photoresist on the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a step of applying a photosensitive liquid such as a photoresist to the wafer W and a heat treatment step such as heating and cooling for the wafer W before and after the resist application step. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 transfers the wafer W between the bake chambers 420, the resist application chambers 400 and the first buffer 320 of the buffer module 300. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the wafer W. [ The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the wafer W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the wafer W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the wafer W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W coated with the photoresist.

The bake chamber 420 heat-treats the wafer W. For example, the bake chambers 420 may be formed by a prebake process in which the wafer W is heated to a predetermined temperature to remove organic matter and moisture on the surface of the wafer W before the photoresist is applied, A soft bake process is performed after coating the wafer W on the wafer W, and a cooling process for cooling the wafer W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process of supplying a developing solution to obtain a pattern on the wafer W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process . The development module 5402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The developing robot 482 transfers the wafer W between the bake chambers 470, the developing chambers 460 and the second buffer 330 of the buffer module 300 and the cooling chamber 350. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the wafer W irradiated with light. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is placed in the housing 461 and supports the wafer W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the wafer W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the wafer W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 463 may be provided as a slit. Further, the developing chamber 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W to which the developer is supplied.

The bake chamber 470 heat-treats the wafer W. For example, the bake chambers 470 may include a post-bake process for heating the wafer W before the development process is performed, a hard bake process for heating the wafer W after the development process is performed, And a cooling step for cooling the wafer. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

The interface module 700 transfers the wafer W between the application and development module 400 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730.

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the wafer W between the first buffer 720, the second buffer 730 and the exposure apparatus 900.

The first buffer 720 temporarily stores the processed wafers W before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed wafers W in the exposure apparatus 900 before they are moved. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the wafer W to and from the support table 722, 632 are provided with openings in the direction in which they are provided. The second buffer 730 has a structure similar to that of the first buffer 720. The interface module may be provided with only buffers and robots as described above without providing a chamber to perform a predetermined process on the wafer.

The controller 600 can divide the entire area including the processing area for processing the substrate and the transport area for transporting the substrate into a plurality of divided areas 601, 602, 603, and 604. In one embodiment, the plurality of partitions may be an area divided into the load port 100, the index module 200, the buffer module 300, the application and development module 400, and the interface module 700. The controller 600 can calculate the time required for carrying the substrate and processing the substrate when the speeds of the transfer units provided in the plurality of divided areas are kept the same. In addition, the controller 600 can control the speed of the transport unit provided in each of the divided areas differently based on each calculated time. By way of example, the speed of the transport unit can be controlled to be slower than that of the divided region where the calculated time is long in the divided region where the calculated time in each divided region is short. The transfer unit may be an index robot 220, a buffer unit robot 360, an application unit robot 432, a development unit robot 482, and an interface robot 740 provided in different process modules. have. As described above, the speed of the transporting unit is adjusted for each process module so that the speed of the transporting unit for each process module is minimized within the range in which the production amount of the substrate processing apparatus is maintained, thereby extending the service life of the component, .

4 is a block diagram for explaining a substrate processing apparatus according to an embodiment of the present invention.

4, a substrate processing apparatus according to an embodiment of the present invention includes a plurality of process modules as a plurality of divided areas 601, 602, and 603, and a controller 600).

In one embodiment, the plurality of partitions 601, 602, and 603 may include a process module 1, a process module 2, and a process module 3. The process module 1, the process module 2, and the process module 3 may each include a processing unit for processing the substrate and a transport unit for transporting the substrate. The controller 600 includes a time measuring unit 610 for measuring a time required for each process module, a speed adjusting unit 630 for adjusting a driving speed of the transferring unit of each process module based on the time measured by the time measuring unit, . ≪ / RTI > The time measurement unit 610 can measure the time required for transporting the substrate and processing the substrate in the process module 1, the process module 2, and the process module 3, respectively. In one embodiment, the time required for each process module can be calculated by calculating a time point at which a substrate is inserted into or removed from an arbitrary process module. The speed adjusting unit 630 may lower the driving speed of the transfer unit of the remaining process module other than the process module having the longest time of the process module 1, the process module 2, and the process module 3 measured by the time measuring unit 610 . For example, the driving speed of the conveying unit provided in the remaining process module may be multiplied by the driving speed of the predetermined conveying unit by the ratio of the required time in each process module to the longest required time. In one embodiment, the driving speed of the transporting unit in each process module is all the same, and the time required for transporting the substrate and processing the substrate in each process module is 20 seconds for the process module 1, 10 Second, and the process module 3 is 5 seconds, the driving speeds of the other process modules 2 other than the process module 1 having the longest required time and the conveying unit included in the process module 3 are adjusted. In this case, in the case of the process module 2, it is adjusted by multiplying the drive time a set in advance by the ratio of the time required in the process module 2 to the longest required time, that is, 10/20. Further, in the case of the process module 3, the process time is adjusted by multiplying the drive time a set by the ratio of the time required in the process module 3 to the longest required time, that is, 5/20. That is, the driving speed of the conveying unit of the process module 1 is a, the driving speed of the conveying unit of the process module 2 is a / 2, and the driving speed of the conveying unit of the process module 3 is a / 4.

5 is a flowchart illustrating a method of controlling a driving speed of a substrate processing apparatus according to an embodiment of the present invention.

5, a method of controlling a driving speed of a substrate processing apparatus including a plurality of processing modules each having a substrate processing unit and a transport unit according to an embodiment of the present invention, And measuring the time required for the process (S610), and adjusting the driving speed of the transport unit for each process module based on the measured time (S630).

In one embodiment, the step of adjusting the driving speed of the transporting unit may reduce the driving speed of the transporting unit provided in the remaining process modules other than the process modules having the longest time among the plurality of process modules. In one embodiment, the driving speed of the transfer unit provided in the remaining process module may be reduced by multiplying the time of the process module with the longest time of the plurality of process modules.

It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modifications are possible within the scope of the present invention. It is to be understood that the technical scope of the present invention should be determined by the technical idea of the claims and the technical scope of protection of the present invention is not limited to the literary description of the claims, To the invention of the invention.

600: controller
601, 602, 603, 604:
610: time measuring unit
630:

Claims (9)

An apparatus for processing a substrate,
A processing unit having a processing region for processing a substrate;
A transport unit moving along the transport area and transporting the substrate to the processing unit;
And a controller for controlling a speed of the conveying unit,
The controller comprising:
The entire region including the process region and the transfer region is divided into a plurality of divided regions,
Calculating a time required for transporting the substrate and processing the substrate when the speed of the transport unit is kept the same in each of the divided areas,
And controls the speed of the transport unit differently according to the calculated time according to the plurality of divided areas,
And the speed of the transfer unit in the plurality of divided areas is multiplied by a ratio of the calculated time in each divided area to the longest one of the calculated times in the plurality of divided areas. The method according to claim 1,
Wherein the calculated speed of the transfer unit is controlled to be slower than the calculated length of the divided area in the divided area where the calculated time is short. delete An apparatus for processing a substrate,
A plurality of process modules including a substrate processing unit and a transfer unit;
And a controller for controlling a driving speed of the conveying unit,
The controller comprising:
A time measuring unit for measuring a time required for carrying the substrate and processing the substrate in each process module; And
And a speed adjusting unit for adjusting a driving speed of the transporting unit for each of the process modules based on the time measured by the time measuring unit,
The speed controller may include:
And multiplies the driving speed of the transfer unit by the ratio of the time of each process module to the longest time among the times measured by the respective process modules. 5. The method of claim 4,
The speed controller may include:
And the driving speed of the transfer unit of the other process module other than the process module having the longest time among the plurality of process modules is lowered. delete A method of controlling a driving speed of a substrate processing apparatus including a plurality of process modules each having a substrate processing unit and a transfer unit,
Measuring a time required for transporting the substrate and processing the substrate in the plurality of process modules; And
And adjusting the driving speed of the transfer unit for each process module based on the measured time,
Wherein the step of adjusting the driving speed of the transfer unit comprises:
Wherein the plurality of process modules are multiplied by a ratio of time in each process module to a longest time of the plurality of process modules. 8. The method of claim 7,
Wherein the step of adjusting the driving speed of the transfer unit comprises:
Wherein the driving speed of the transfer unit of the other process module other than the process module having the longest time among the plurality of process modules is lowered. delete

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