KR101816183B1 - Solar cell module - Google Patents

Abstract

The present invention relates to a solar cell module.
A solar cell module according to the present invention includes: a semiconductor substrate; A plurality of solar cells each having a plurality of first electrodes and a plurality of second electrodes arranged in a first direction and having different polarities on the semiconductor substrate; Each of which is connected to each of the plurality of solar cells and is arranged in a second direction crossing the plurality of first and second electrodes and connected to the plurality of first electrodes by a plurality of first conductive wires and a plurality of second A plurality of second conductive wirings superimposed and connected to the electrodes; And a plurality of first conductive wirings arranged in a first direction between the two first and second solar cells adjacent to each other of the plurality of solar cells and connected to the first solar cell of the two solar cells, And a plurality of second conductive wirings connected to the second solar cell are connected in common. The planar shape of the interconnector has an asymmetrical shape with respect to a center line in a direction parallel to the first direction in the interconnector.

Description

Solar cell module {SOLAR CELL MODULE}

The present invention relates to a solar cell module.

Recently, as energy resources such as oil and coal are expected to be depleted, interest in alternative energy to replace them is increasing, and solar cells that produce electric energy from solar energy are attracting attention.

Typical solar cells have a semiconductor portion that forms a p-n junction by different conductive types, such as p-type and n-type, and electrodes connected to semiconductor portions of different conductivity types, respectively.

When light is incident on such a solar cell, a plurality of electron-hole pairs are generated in the semiconductor portion, and the generated electron-hole pairs are separated into electrons and holes, respectively, so that the electrons move toward the n- Type semiconductor portion. The transferred electrons and holes are collected by different electrodes connected to the n-type semiconductor portion and the p-type semiconductor portion, respectively, and electric power is obtained by connecting these electrodes with electric wires.

A plurality of such solar cells may be formed as modules by being connected to each other by inter connecters.

An object of the present invention is to provide a solar cell module.

A solar cell module according to the present invention includes: a semiconductor substrate; A plurality of solar cells each having a plurality of first electrodes and a plurality of second electrodes arranged in a first direction and having different polarities on the semiconductor substrate; Each of which is connected to each of the plurality of solar cells and is arranged in a second direction crossing the plurality of first and second electrodes and connected to the plurality of first electrodes by a plurality of first conductive wires and a plurality of second A plurality of second conductive wirings superimposed and connected to the electrodes; And a plurality of first conductive wirings arranged in a first direction between the two first and second solar cells adjacent to each other of the plurality of solar cells and connected to the first solar cell of the two solar cells, And a plurality of second conductive wirings connected to the second solar cell are connected in common. The planar shape of the interconnector has an asymmetrical shape with respect to a center line in a direction parallel to the first direction in the interconnector.

Here, the first connecting portion, which is connected to the first solar cell and is connected to the interconnector, and the second connecting portion, which is connected to the interconnector by the second conductive interconnect that is connected to the second solar cell, And the interconnector has an asymmetrical shape with respect to the center line in the first connecting portion and an asymmetrical shape with respect to the center line in the second connecting portion.

More specifically, the planar shape of the interconnector may include at least one of a slit, a hole, a protrusion, a depression, or a zigzag shape formed asymmetrically with respect to a center line.

For example, the planar shape of the interconnector has a zigzag shape, wherein the zigzag shape can protrude from one side with respect to the centerline when the interconnector is viewed from the plane, and the other side can be recessed.

Here, the inter connecter having a zigzag shape is characterized in that the first side adjacent to the first solar cell in the first connecting portion protrudes in the direction of the first solar cell, is symmetrical with respect to the center line, The second side is recessed in the center line direction, the second side in the second connecting portion protrudes in the direction of the second solar cell, and the first side can be recessed in the centerline direction.

Here, the linewidth of the inter connecter having a zigzag shape is between 1 mm and 3 mm, and can be uniform within an error range of 10% or less.

The width in the second direction from the one side projecting from the zigzag-shaped inter connector to the other side projecting from the one side may be between 2 mm and 4 mm.

Alternatively, the planar shape of the interconnector has protrusions and / or depressions that are formed asymmetrically with respect to the center line, wherein the first side of the first connection portion is provided with the protrusion, the second side is not provided with the protrusion, The second side surface of the second connection portion is provided with a protrusion, and the first side surface may not have a protrusion or may be provided with a depression.

Here, the width of the protrusion in the first direction may be between 1 mm and 3 mm.

Alternatively, the planar shape of the interconnector may include a depression formed asymmetrically with respect to a center line, the depression may be formed in the second side surface of the first connection portion, and the depression may not be provided in the first side surface that is symmetrical with the second side surface , The first side surface of the second connection portion may have a depression, and the second side surface may not have a depression.

Here, the width of the depressed portion in the first direction may be between 1 mm and 3 mm.

Alternatively, the planar shape of the interconnector may include a slit or hole located asymmetrically with respect to the center line, wherein a slit or hole is provided in a region adjacent to the first side with respect to a center line in the first connecting portion, The slit or hole is not provided in the region adjacent to the second side and the slit or hole is provided in the region adjacent to the second side with respect to the center line in the second connecting portion, Or holes may not be provided.

The first conductive wiring is connected to the first electrode through a conductive adhesive in each of the plurality of solar cells, the second electrode is insulated by the insulating layer, the second conductive wiring is separated from the first conductive wiring, The electrode may be connected to the electrode through a conductive adhesive, and the first electrode may be insulated by an insulating layer.

The semiconductor substrate of each of the first and second solar cells is doped with an impurity of the first conductivity type and the first electrode is located on the rear surface of the semiconductor substrate and is doped with a second conductive impurity opposite to the first conductivity. And the second electrode is located on the rear surface of the semiconductor substrate and can be connected to the rear electric field portion in which the impurity of the first conductive type is doped at a higher concentration than the semiconductor substrate.

The solar cell module according to an embodiment of the present invention has an asymmetrical shape with respect to the center line of the solar cell module, so that even if thermal stress is applied to the interconnector by the first and second conductive interconnections, It is possible to minimize the decrease in the adhesive force between the first and second conductive wirings and the inter-connector.

1 to 4 are views for explaining an example of a solar cell module according to the present invention.
5 is a view for explaining an example in which the planar shape of the interconnector has a zigzag shape of an asymmetric structure when viewed from the front of the solar cell module according to the present invention shown in FIG.
6 is a view for explaining an example in which the planar shape of the interconnector has a depressed portion having an asymmetrical structure when the solar cell module according to the present invention is viewed from the front.
FIG. 7 is a view illustrating an example in which the planar shape of the interconnector has an asymmetrical protrusion when the solar cell module according to the present invention is viewed from the front. FIG.
8 is a view for explaining an example in which the planar shape of the interconnector has protrusions and depressions having an asymmetric structure when the solar cell module according to the present invention is viewed from the front.
9 to 11 are views for explaining an example in which a slit or a hole is asymmetrically located in the interconnector when the solar cell module according to the present invention is viewed from the front.
12 is a view illustrating an example in which the slit is asymmetrically located on the interconnector in a state in which the plane shape of the interconnector is increased or decreased along the first direction when the solar cell module according to the present invention is viewed from the front side .

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and similar parts are denoted by like reference characters throughout the specification.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. When a layer, film, region, plate, or the like is referred to as being "on" another portion, it includes not only the case directly above another portion but also the case where there is another portion in between. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle. Further, when a certain portion is formed as "whole" on another portion, it means not only that it is formed on the entire surface of the other portion but also that it is not formed on the edge portion.

Hereinafter, the front surface may be a surface of the semiconductor substrate 110 on which the direct light is incident, and the rear surface may be an opposite surface of the semiconductor substrate 110 on which the direct light is not incident, have.

1 to 4 are views for explaining an example of a solar cell module according to the present invention.

Here, FIG. 1 is an example of a shape of the solar cell module viewed from the rear side.

1, the solar cell module according to the present invention may include a plurality of solar cells C1 and C2, a plurality of conductive wirings 200, and an interconnector 300.

Each of the plurality of solar cells C1 and C2 includes a plurality of first electrodes 141 spaced apart from each other at least on the rear surface of the semiconductor substrate 110 and the semiconductor substrate 110 and extending in a first direction x, And a plurality of second electrodes 142 (142).

The plurality of conductive wirings 200 are extended in a second direction y intersecting with the first direction x which is the longitudinal direction of the first and second electrodes 141 and 142, Lt; / RTI >

The plurality of conductive wirings 200 may include a plurality of first conductive wirings 210 connected to a plurality of first electrodes 141 and connected to the plurality of second electrodes 142 in a superposed manner, 2 conductive wirings 220 as shown in FIG.

More specifically, the first conductive wiring 210 is connected to the first electrode 141 provided in each solar cell through the conductive adhesive 251, and the second electrode 142 ).

The second conductive wiring 220 is connected to the second electrode 142 provided in each solar cell via the conductive adhesive 251 and is electrically connected to the first electrode 141 and the second electrode 142 by an insulating layer 252 made of an insulating material. Can be insulated.

The plurality of conductive wirings 200 may include any one of two solar cells adjacent to each other among a plurality of solar cells, for example, a plurality of first electrodes 141 provided in the first solar cell C1, A plurality of second electrodes 142 provided in a single solar cell, for example, the second solar cell C2, may be electrically connected to each other in series via the interconnector 300.

More specifically, the inter connector 300 may be disposed so as to extend in the first direction (x) between the first solar cell C1 and the second solar cell C2. For example, the interconnect 300 may be spaced apart from the semiconductor substrate 110 of the first solar cell C1 and the semiconductor substrate 110 of the second solar cell C2.

The first conductive interconnect 210 connected to the first electrode 141 of the first solar cell C1 and the second electrode 142 of the second solar cell C2 are connected to the interconnector 300, The connected second conductive wires 220 are connected in common so that the first and second solar cells C1 and C2 can be connected in series in the second direction y.

Meanwhile, in the present invention, the plane shape of the inter connecter 300 may have an asymmetrical shape with respect to the center line 300CL in a direction parallel to the first direction (x) in the interconnector 300. [ As described above, the interconnector 300 according to the present invention has an asymmetrical shape with respect to the center line 300CL in plan view, thereby reducing the thermal expansion stress generated by the first and second conductive interconnects 210 and 220 .

The planar shape of the interconnector 300 will be described later in more detail with reference to FIG.

Each constituent part of the solar cell module will be described in more detail as follows.

FIG. 2 is a partial perspective view showing an example of a solar cell applied to FIG. 1, and FIG. 3 is a sectional view of the solar cell shown in FIG. 2 in a second direction (y).

2 and 3, an example of a solar cell according to the present invention includes an antireflection film 130, a semiconductor substrate 110, a tunnel layer 180, an emitter section 121, a rear electric section 172, a backside surface field (BSF), an intrinsic semiconductor layer 150, a passivation layer 190, a plurality of first electrodes 141, and a plurality of second electrodes 142.

Here, the antireflection film 130, the intrinsic semiconductor layer 150, the tunnel layer 180, and the passivation layer 190 may be omitted. However, since the efficiency of the solar cell is improved when provided, As an example.

The semiconductor substrate 110 may be formed of at least one of monocrystalline silicon and polycrystalline silicon containing an impurity of the first conductivity type. In one example, the semiconductor substrate 110 may be formed of a single crystal silicon wafer.

Here, the first conductivity type may be any one of n-type and p-type conductivity types.

When the semiconductor substrate 110 has a p-type conductivity type, impurity of a trivalent element such as boron (B), gallium, indium, or the like is doped in the semiconductor substrate 110. However, when the semiconductor substrate 110 has an n-type conductivity type, impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb) may be doped into the semiconductor substrate 110.

Hereinafter, a case where the first conductive type of the semiconductor substrate 110 is n-type will be described as an example.

A plurality of uneven portions 200P may be formed on the entire surface of the semiconductor substrate 110. Accordingly, the emitter section 121 located on the front surface of the semiconductor substrate 110 may also have a concave and convex (200P) surface.

Accordingly, the amount of light reflected from the front surface of the semiconductor substrate 110 decreases, and the amount of light incident into the semiconductor substrate 110 increases.

The antireflection film 130 is formed on the front surface of the semiconductor substrate 110 to minimize the reflection of light incident from the outside to the front surface of the semiconductor substrate 110. The antireflection film 130 is formed of an aluminum oxide film (AlOx), a silicon nitride film (SiNx) An oxide film (SiOx), and a silicon oxynitride film (SiOxNy).

The tunnel layer 180 is disposed in direct contact with the entire rear surface of the semiconductor substrate 110, and may include a dielectric material. Therefore, the tunnel layer 180 can pass carriers generated in the semiconductor substrate 110, as shown in FIGS.

The tunnel layer 180 may pass carriers generated in the semiconductor substrate 110 and passivate the back surface of the semiconductor substrate 110.

In addition, the tunnel layer 180 may be formed of a dielectric material formed of SiCx or SiOx having high durability even at a high temperature process of 600 DEG C or more.

The emitter layer 121 is disposed on the rear surface of the semiconductor substrate 110. For example, a plurality of the emitter layers 121 are arranged in a first direction (x) so as to be in direct contact with a part of the rear surface of the tunnel layer 180, Type emitter layer 121 may be formed of a polycrystalline silicon material having a second conductivity type opposite to that of the emitter layer 121. The emitter layer 121 may form a pn junction with the semiconductor substrate 110 via the tunnel layer 180. [

Since each emitter section 121 forms a p-n junction with the semiconductor substrate 110, the emitter section 121 can have a p-type conductivity type. However, unlike the example of the present invention, when the semiconductor substrate 110 has the p-type conductivity type, the emitter portion 121 has the n-type conductivity type. In this case, the separated electrons move toward the plurality of emitter portions 121 and the separated holes can move toward the plurality of rear electric fields 172.

When the plurality of emitter sections 121 have a p-type conductivity type, the emitter section 121 can be doped with an impurity of a trivalent element. Conversely, when the plurality of emitter sections 121 have an n-type conductivity type , The emitter portion 121 may be doped with an impurity of a pentavalent element.

The rear electric field portion 172 is disposed on the rear surface of the semiconductor substrate 110 and is in direct contact with a part of the rear surface of the tunnel layer 180 which is spaced apart from each of the plurality of emitter portions 121, May be formed to be long in a first direction (x) side by side with the emitter part (121).

The rear electric field portion 172 may be formed of a polycrystalline silicon material doped with impurities of the first conductivity type at a higher concentration than the semiconductor substrate 110. Thus, for example, when the substrate is doped with an n-type impurity, the plurality of backside electrical paths 172 may be n + impurity regions.

The rear electric field 172 disturbs the hole movement toward the rear electric field 172, which is the movement direction of the electrons, due to the potential barrier due to the difference in impurity concentration between the semiconductor substrate 110 and the rear electric field 172, (E. G., Electrons) to the backside electrical < / RTI >

Thus, by reducing the amount of charge lost due to recombination of electrons and holes in the rear electric field 172 and in the vicinity thereof or at the first and second electrodes 142, 141 and 142 and accelerating electron movement, 172 can be increased.

2 and 3, the case where the emitter portion and the rear electric field portion are formed of a polycrystalline silicon material on the rear surface of the tunnel layer has been described as an example. Alternatively, when the tunnel layer is omitted, 110 may be diffused and doped. In this case, the emitter portion and the rear surface electric portion may be formed of the same single-crystal silicon material as the semiconductor substrate 110.

The intrinsic semiconductor layer 150 may be formed on the back surface of the tunnel layer exposed between the emitter portion and the rear electric portion and the intrinsic semiconductor layer 150 may be formed on the back surface of the tunnel layer, The impurity of the first conductivity type or the impurity of the second conductivity type may be formed of an intrinsic polycrystalline silicon layer not doped.

2 and 3, each of the opposite side surfaces of the intrinsic semiconductor layer 150 may have a structure in which the side surfaces of the emitter layer 121 and the side surfaces of the rear electric section 172 are in direct contact with each other.

The passivation layer 190 is formed by removing a defect caused by a dangling bond formed on the rear surface of the polycrystalline silicon layer formed on the rear electric field portion 172, the intrinsic semiconductor layer 150, and the emitter portion 121 , And to prevent the carriers generated from the semiconductor substrate 110 from being recombined by a dangling bond and disappearing.

The plurality of first electrodes 141 may be connected to the emitter section and extend in the first direction (x). The first electrode 141 may collect carriers, for example, holes, which have migrated toward the emitter section 121.

The plurality of second electrodes 142 may be formed to extend in the first direction (x) in parallel with the first electrode 141, connected to the rear electric field portion. As such, the second electrode 142 may collect carriers, e.g., electrons, that have migrated toward the rear electric section 172.

1, each of the first and second electrodes 141 and 142 may be extended in a first direction x, and the first electrode 141 and the second electrode 142 may be formed to extend in the first direction x, May be alternately arranged in the second direction (y).

The holes collected through the first electrode 141 and the electrons collected through the second electrode 142 in the solar cell according to the present invention are used as electric power of the external device through the external circuit device .

The solar cell applied to the solar cell module according to the present invention is not necessarily limited to only FIGS. 2 and 3, and the first and second electrodes 141 and 142 provided on the solar cell are formed only on the rear surface of the semiconductor substrate 110 Other components can be changed at any time.

For example, in the solar cell module of the present invention, a part of the first electrode 141 and the emitter part 121 are located on the front surface of the semiconductor substrate 110, and a part of the first electrode 141 is formed on the semiconductor substrate 110 The MWT type solar cell connected to the remaining part of the first electrode 141 formed on the rear surface of the semiconductor substrate 110 through the formed hole is also applicable.

The cross-sectional structure in which the solar cell is connected in series using the conductive wiring 200 and the interconnector 300 as shown in FIG. 1 is as shown in FIG.

Fig. 4 shows a cross section taken along the line X1-X1 in Fig. 1. Fig.

As shown in FIG. 4, a plurality of solar cells including the first solar cell C1 and the second solar cell C2 may be arranged in the second direction (y).

At this time, the longitudinal direction of the first and second electrodes 141 and 142 provided in the first and second solar cells C1 and C2 may be oriented in the first direction x.

The first and second solar cells C1 and C2 are connected to the first and second conductive wirings 210 and 220 while the first and second solar cells C1 and C2 are arranged in the second direction y. And one interconnected string can be formed by the interconnector 300 and extending in the second direction y.

The first and second conductive wirings 210 and 220 and the interconnector 300 are formed of a conductive metal and the first and second conductive wirings 210 and 220 are formed on the rear surface of the semiconductor substrate 110 of each solar cell And the first and second conductive wirings 210 and 220 connected to the respective semiconductor substrates 110 for the series connection of the solar cells may be connected to the interconnector 300.

In addition, the plurality of first and second conductive wirings 210 and 220 may have a conductive wire shape having a circular section or a ribbon shape having a width larger than the thickness.

Here, the line width of each of the first and second conductive wirings 210 and 220 may be formed to be between 0.5 mm and 2.5 mm in consideration of minimizing the manufacturing cost while keeping the line resistance of the conductive wiring sufficiently low, The interval between the conductive wirings 210 and the second conductive wirings 220 may be formed to be between 4 mm and 6.5 mm in order to prevent the short circuit current of the solar cell module from being damaged in consideration of the total number of the conductive wirings 200.

In addition, the thickness of the conductive wiring 200 may be between 0.05 mm and 0.3 mm.

More specifically, the plurality of first conductive wirings 210 are connected to the plurality of first electrodes 141 provided in each of the plurality of solar cells C1 and C2 via the conductive adhesive 251, And may be insulated from the plurality of second electrodes 142 by the insulating layer 252.

The plurality of second conductive wirings 220 are connected to the plurality of second electrodes 142 provided in each of the plurality of solar cells C1 and C2 through the conductive adhesive 251, And may be insulated from the plurality of first electrodes 141 by the layer 252.

Here, the conductive adhesive 251 may be formed of a metal material including an alloy containing tin (Sn) or tin (Sn). The conductive adhesive 251 may be a solder paste including an alloy containing tin (Sn) or tin (Sn), an alloy containing tin (Sn) or tin (Sn) May be formed in the form of either an epoxy solder paste or a conductive paste.

Here, the insulating layer 252 may be any insulating material. For example, an insulating material such as epoxy resin, polyimide, polyethylene, acryl-based resin, or silicone-based resin may be used.

1 and 4, each of the plurality of first conductive wirings 210 is electrically connected to the semiconductor substrate (not shown) disposed on the side of the interconnector 300 disposed between the first and second solar cells C1 and C2 110, respectively.

1 and 4, each of the plurality of second conductive wirings 220 includes a plurality of first conductive wirings 220 disposed on the semiconductor substrate 110, respectively.

As described above, a portion of the plurality of first conductive wirings 210 and the plurality of second conductive wirings 220, which are connected to the rear surface of each solar cell, protruding out of each semiconductor substrate 110 is shown in Figs. 1 and 4 The plurality of solar cells C1 and C2 can be connected in common to the rear surface of the interconnector 300 disposed between the first and second solar cells C1 and C2, lt; RTI ID = 0.0 > (y). < / RTI >

4, the first and second conductive wirings 210 and 220 may be directly bonded to the interconnector 300 at a connection portion overlapping the interconnector 300. Alternatively, however, Although not shown, the first and second conductive wirings 210 and 220 may be bonded to the interconnect 300 through a conductive adhesive at a connection portion overlapping the interconnector 300.

In a solar cell module having such a structure, when there is a solar cell in which a connection failure occurs between the first and second conductive wirings 210 and 220 and the first and second electrodes 141 and 142 among a plurality of solar cells, The connection between the solar cell 300 and the plurality of first and second conductive wirings 210 and 220 is released so that the solar cell can be replaced more easily.

In the present invention, as shown in FIG. 1, a first connecting portion connected to the first connector C1 by a first conductive wiring 210 connected to the inter connector 300, The second connecting portion in which the second conductive wiring 220 connected to the second connector C2 is overlapped and connected to the inter connecter 300 is located alternately along the first direction x in the longitudinal direction of the inter connecter 300 .

In addition, the planar shape of the interconnect 300 according to the present invention may have an asymmetrical shape with respect to the center line 300CL in the first connecting portion, and an asymmetric shape with respect to the center line 300CL in the second connecting portion .

When the first connecting portion and the second connecting portion are alternately disposed on the rear surface of the inter connecter 300 along the first direction x, the process of manufacturing the solar cell module or the process of using the solar cell module Thermal expansion may occur in the first and second conductive wirings 210 and 220. The thermal expansion stress of the first and second conductive wirings 210 and 220 causes the interconnector 300 to have a planar shape, 2 warps in the second direction (y), which is the longitudinal direction of the first and second conductive wirings (210, 220).

If deformation occurs in the interconnector 300, the adhesive force between the interconnector 300 and the first and second conductive interconnects 210 and 220 may be reduced, The shape of the interconnector 300 can hardly be restored to its original state. Therefore, the state where the adhesive force is lowered may be continued, and as a result, the efficiency of the solar cell module may be lowered or defective.

However, as shown in Fig. 1, the planar shape of the interconnector 300 is formed so as to have an asymmetrical shape with respect to the center line 300CL in the direction parallel to the first direction (x) in each of the first and second connecting portions In this case, even if the shape of the interconnector 300 is deformed as described above, the thermal expansion stress caused by the first and second conductive interconnects 210 and 220 can be relaxed to minimize the deformation, It is possible to minimize the deterioration of the adhesive force between the first conductive wiring 300 and the first and second conductive wirings 210 and 220.

For example, the interconnector 300 according to the present invention has a planar shape in which the planar shape of the interconnector 300 is slit longer than the width formed asymmetrically with respect to the center line 300CL, Holes, protrusions, depressions, or zigzag shapes.

1, the planar shape of the interconnector 300 is a zigzag shape. However, the planar shape of the interconnector 300 is different from the planar shape of the interconnector 300 asymmetrically with respect to the center line 300CL A shape of at least one of a slit, a hole, a projection, or a depression may be provided.

Hereinafter, various shapes of the interconnector 300 having such an asymmetric planar shape will be described in more detail.

5 is a view for explaining an example in which the planar shape of the interconnector 300 has a zigzag shape of an asymmetrical structure when the solar cell module according to the present invention shown in FIG. 1 is viewed from the front.

5 is an enlarged view of the interconnector 300 between the first and second solar cells C1 and C2 viewed from the front side of the solar cell module.

5, a first connecting portion 300a and a second connecting portion 300a, to which the first conductive wiring 210 connected to the first solar cell C1 are overlapped and connected to the interconnect 300, The second connecting portion 300b in which the second conductive wiring 220 connected to the interconnection 300 is overlapped and connected to the interconnection 300 alternately moves along the first direction x, can do.

In addition, the interconnector 300 may have a zigzag shape having an asymmetrical structure with respect to a center line 300CL in a direction parallel to the first direction x when viewed in plan view. That is, the zigzag-shaped inter connector 300 may have a structure in which a planar shape is protruded from one side of the center line 300CL and the other side is recessed.

More specifically, in the zigzag-shaped inter connector 300, the first side 300S1 immediately adjacent to the first solar cell C1 in the first connecting portion 300a protrudes in the direction of the first solar cell C1 The second side 300S2 immediately adjacent to the second solar cell C2 can be recessed in the direction of the center line 300CL and the second side 300S2 can be recessed in the direction of the center line 300CL, The two side surfaces 300S2 protrude toward the second solar cell C2 and the first side surface 300S1 can sink toward the center line 300CL.

Therefore, the interconnect 300 can be positioned relatively closer to the first solar cell C1 in the first connecting portion 300a, and relatively closer to the second solar cell C2 in the second connecting portion 300b As shown in FIG.

As described above, the solar cell module according to the present invention is configured such that the interconnector 300 has a zigzag shape of an asymmetric structure, and the zigzag-shaped interconnector 300 is connected to the first connecting portion 300a with respect to the center line 300CL And protrudes in the direction of the first solar cell C1 to which the first conductive wiring 210 is connected and protrudes in the direction of the second solar cell C2 to which the second conductive wiring 220 is connected in the second connecting portion 300b The thermal expansion stress generated by the first and second conductive wirings 210 and 220 can be relieved so that the deformation of the interconnector 300 can be minimized and even if the interconnector 300 is deformed, 2 conductive wirings 210 and 220 can be minimized.

The wire width W300 of the zigzag interconnector 300 is set to 1 mm or less in consideration of the distance between the first and second solar cells C1 and C2 and the first and second connection areas 300a and 300b. To 3 mm, and can be uniformly formed within a range of an error range of 10% or less.

In addition, the second directional width WP300 extending from one surface of the inter connecter 300 having a zigzag shape protruding from one side may be between 2 mm and 4 mm.

Although FIGS. 1 and 5 illustrate a case where the planar shape of the interconnector 300 has a zigzag shape of an asymmetric structure, the case where the planar shape of the interconnector 300 has an asymmetrical shape may be various .

Hereinafter, various examples in which the planar shape of the interconnector 300 has an asymmetric shape will be described in more detail with reference to Figs. 6 to 12 below.

In the following Figs. 6 to 12, the same parts as those of the prior solar cell module are omitted, and the other parts are mainly described.

6 is a view for explaining an example in which a solar cell module according to the present invention has a depressed portion 300R having an asymmetrical planar shape of the interconnector 300 when viewed from the front.

As shown in FIG. 6, the planar shape of the interconnector 300 may include a depression 300R that is formed to be long in the first direction (x) and is formed asymmetrically with respect to the center line 300CL.

More specifically, the second side surface 300S2 of the first connector 300a of the inter connecter 300 is provided with a depression 300R depressed in the direction of the center line 300CL of the inter connector 300, The first side 300S1 symmetrical with the side surface 300S2 may not be provided with the depression 300R.

The first side 300S1 of the second connector 300b of the inter connector 300 is provided with a depression 300R depressed in the direction of the center line 300CL of the inter connector 300, 300S2 may not be provided with the depressed portion 300R.

6, the planar shape of the depression 300R provided in the interconnector 300 may be a curved surface shape, for example, semicircular or semi-elliptic.

However, as shown in Fig. 6, the shape of the depression 300R may be triangular, rectangular or polygonal.

At this time, the maximum depression depth H300R of the depression 300R may be 1/2 or less of the interconnect line width W300, and may be, for example, 0.5 mm to 1.5 mm.

The maximum width W300R of the depression 300R in the first direction x may be substantially equal to or larger than the line widths W210 and W220 of the first and second conductive wirings 210 and 220, And may be between 1 mm and 3 mm.

7 is a view for explaining an example in which the solar cell module according to the present invention has an asymmetrical protrusion 300P with a plane shape of the interconnector 300 when viewed from the front.

As shown in FIG. 7, the planar shape of the interconnector 300 may include a protrusion 300P that is elongated in the first direction (x) and is formed asymmetrically with respect to the center line 300CL.

More specifically, the first side 300S1 of the first connector 300a of the inter connector 300 is provided with a protrusion 300P protruding in the direction of the first solar cell C1, The protrusion 300P may not be provided.

The second side 300S2 of the second connector 300b of the inter connector 300 is provided with a protrusion 300P protruding in the direction of the second solar cell C2. (300P) may not be provided.

7, the protrusion 300P protrudes in a rectangular shape as an example. Alternatively, the protrusion 300P may have a curved shape, i.e., a semicircular or oval shape, or a triangular shape.

At this time, the maximum protrusion length H300P of the protrusion 300P may be 1/2 or less of the interconnect line width W300, and may be, for example, 0.5 mm to 1.5 mm.

The maximum width W300P of the protrusion 300P in the first direction x may be substantially equal to or greater than the line widths W210 and W220 of the first and second conductive wirings 210 and 220, Lt; / RTI >

8 is a view for explaining an example in which the planar shape of the interconnector 300 has projected portions 300P and depressions 300R having an asymmetrical structure when the solar cell module according to the present invention is viewed from the front.

8, the planar shape of the interconnect 300 is formed to be long in the first direction x, and the projections 300P and the depressions 300R, which are formed asymmetrically with respect to the center line 300CL, .

More specifically, the first side 300S1 of the first connector 300a of the inter connector 300 is provided with a protrusion 300P protruding in the direction of the first solar cell C1, The depression 300R may be provided in the direction of the center line 300CL of the inter connecter 300.

The second side 300S2 of the second connector 300b of the inter connector 300 is provided with a protrusion 300P protruding in the direction of the second solar cell C2. A depressed portion 300R depressed toward the center line 300CL of the connector 300 may be provided.

Although the protrusion 300P and the depression 300R have a rectangular shape as an example, the protrusion 300P and the depression 300R may have a curved shape. The width, protrusion length, or recess length may be the same as those described in FIGS. 6 and 7 above.

6 to 8 illustrate the case where the depression 300R and the protrusion 300P are formed on the first side 300S1 and the second side 300S2 of the inter connecter 300. However, The first side 300S1 and the second side 300S2 of the connector 300 may be formed in a straight line and may include slits or holes formed asymmetrically in the interconnect 300. [

This will be described in more detail as follows.

9 to 11 are views for explaining an example in which the slit 300SL or the hole 300H is asymmetrically located on the interconnect 300 when the solar cell module according to the present invention is viewed from the front.

As shown in FIG. 9, the planar shape of the interconnector 300 may include a slit 300SL positioned asymmetrically with respect to the center line 300CL.

The first and second side faces 300S1 and 300S2 of the interconnector 300 are provided in a linear shape and the line width W300 of the interconnector 300 may be uniform. And the longitudinal direction of the light source 300SL may be the first direction x.

The slit 300SL is provided in a region adjacent to the first side 300S1 with respect to the center line 300CL in the first connecting portion 300a of the inter connecter 300, It may not be provided in the region adjacent to the two side surfaces 300S2.

The slit 300SL is provided in a region adjacent to the second side 300S2 with respect to the center line 300CL in the second connecting portion 300b of the inter connecter 300, But may not be provided in a region adjacent to the side surface 300S1.

The line width WSL of the slit 300SL may be between 0.2 mm and 0.5 mm and the length LSL of the slit 300SL in the first direction x may be less than the length LSL of the first and second conductive lines 210 and 220 W210 and W220 of the line width W220, and may be, for example, between 1 mm and 2 mm.

Although the slit 300SL is stressed by the first and second conductive wirings 210 and 220, the space formed by the slit 300SL serves to buffer the interconnector 300, Can be relieved from being deformed.

9 shows an example in which the number of the slits 300SL formed in each of the first and second connecting portions 300a and 300b is one. However, in the first and second connecting portions 300a and 300b, The number of slits 300SL formed may be plural.

9, the slit 300SL has a longitudinal direction in the first direction x. However, as shown in FIG. 10, the slit 300SL may be elongated in the second direction y, .

11, the interconnect 300 may include a hole 300H having the same width and the same length, which are positioned asymmetrically with respect to the center line 300CL.

Such a hole 300H is provided in a region adjacent to the first side face 300S1 with respect to the center line 300CL in the first connecting portion 300a of the inter connecter 300, It may not be provided in the region adjacent to the two side surfaces 300S2.

The second connecting portion 300b of the inter connector 300 is provided in the vicinity of the second side 300S2 with respect to the center line 300CL and is provided on the first side 300S1 with respect to the center line 300CL It may not be provided in the adjacent area.

The width or length W300H of the hole 300H may be smaller or larger than the line widths W210 and W220 of the first and second conductive wirings 210 and 220 and may be set to be between 1.5 mm and 2.5 mm, .

9 to 11 show a case where the slit 300SL or the hole 300H located asymmetrically to the interconnector 300 is provided in a state where the line width W300 of the interconnector 300 is uniform The slit 300SL or the hole 300H may be asymmetric to the inter connector 300 in a state in which the line width W300 of the interconnect 300 is increased or decreased along the first direction x Lt; / RTI >

This will be described with reference to FIG.

12 is a sectional view of the solar cell module according to the present invention when the slit 300SL is connected to the interconnector 300 in a state in which the planar shape of the interconnector 300 is formed to increase or decrease along the first direction x, 300 as shown in FIG.

12, the interconnect 300 according to the present invention can be formed such that the planar shape increases or decreases along the first direction x, and the slit 300SL is asymmetric to the interconnect 300 Lt; / RTI >

The slit 300SL in the first direction x is provided adjacent to the first side 300S1 with respect to the center line 300CL in the first connecting portion 300a of the inter connecter 300, The slit 300SL may not be provided in a region adjacent to the second side 300S2.

A slit 300SL in the first direction x is provided in a region adjacent to the second side 300S2 with respect to the center line 300CL in the second connecting portion 300b of the inter connecter 300, The slit 300SL may not be provided in a region adjacent to the first side 300S1 with respect to the first side 300L1.

A slit 300SL in the second direction y may be provided between the first and second connecting portions 300a and 300b of the inter connecter 300. [

12 shows a case where the slit 300SL is provided in the first and second connecting portions 300a and 300b of the inter connecter 300. Alternatively, the first and second connecting portions 300a and 300b may be provided with slits A hole 300H may be provided instead of the hole 300SL.

Here, the length and the width of each slit 300SL may be the same as those described in Figs. 9 and 10 above.

In addition, the maximum line width WM300 of the interconnect 300 may be between 2 mm and 3 mm, and the minimum line width WS300 of the interconnect 300 may be between 0.6 mm and 1 mm.

The length 300X1 of the interconnect 300 in which the maximum line width WM300 is maintained may be between 5mm and 7mm and the length 300X2 of the line width W300 of the interconnect 300 may be 1mm And the length 300X3 at which the minimum line width WS300 of the interconnect 300 is maintained may be between 3 mm and 3.5 mm.

As described above, the interconnector 300 according to the present invention has an asymmetrical shape with respect to the center line 300CL in plan view, thereby reducing the thermal expansion stress generated by the first and second conductive interconnects 210 and 220 .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, Of the right.

Claims (5)

A semiconductor substrate; A plurality of solar cells each having a plurality of first electrodes and a plurality of second electrodes arranged in a first direction and having different polarities on the semiconductor substrate;
A plurality of first conductive wirings, each of which is connected to each of the plurality of solar cells and is arranged in a second direction crossing the plurality of first and second electrodes, the plurality of first conductive wirings being overlapped and connected to the plurality of first electrodes; A plurality of second conductive wirings connected in superposition with the plurality of second electrodes; And
A plurality of first conductive wirings arranged in the first direction between two first and second solar cells adjacent to each other of the plurality of solar cells and connected to the first solar cell of the two solar cells, And an interconnector in which the plurality of second conductive interconnections connected to the second solar cell of the two solar cells are commonly connected,
The planar shape of the interconnector includes first and second slits or first and second holes positioned asymmetrically with respect to a center line of the interconnector in parallel with the first direction,
Wherein a first side surface of the interconnector adjacent to the first solar cell is spaced apart from the first solar cell and a plurality of first conductive interconnections connected to the first solar cell are connected, The first slit or the first hole is provided,
Wherein a second side surface of the interconnector adjacent to the second solar cell is spaced apart from the second solar cell and a plurality of second conductive interconnections connected to the second solar cell are connected, The second slit or the second hole is provided,
The first slit and the second slit may be provided at positions that are not line-symmetrical with respect to the center line of the interconnector, or the first hole and the second hole may be provided at positions that are not line-symmetrical with respect to the center line of the interconnector Solar cell module. The method according to claim 1,
Wherein a plurality of the first slits or the first holes are provided in the first connection region of the interconnector,
And a plurality of second slits or second holes are provided in the second connection region of the interconnector. The method according to claim 1,
Wherein the interconnector further comprises a third slit or a third hole in another region that does not overlap the first and second connection regions. The method of claim 3,
And the third slit or the third hole overlaps with a center line of the interconnector. The method according to claim 1,
The line width of the interconnector in the second direction changes as the interconnector moves in the first direction,
Wherein the interconnector includes a portion having a maximum line width in the second direction of the first, second slits, or first and second holes, or a line width smaller than the maximum length in the first direction.

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