KR101762123B1 - Manufacturing method for hollow SiC structure - Google Patents

Abstract

The present invention relates to a method of manufacturing a hollow SiC structure, comprising the steps of: a) preparing an upper structure and a lower structure having grooves formed on at least one side thereof; b) stacking the upper structure and the lower structure, And c) depositing SiC on the resultant product of step b) to form a bonding structure for bonding the upper structure and the lower structure to each other, . The SiC structure divided into the upper part and the lower part based on the hollow part is manufactured and the divided SiC structure is placed in contact with the SiC structure and then the SiC structure is deposited again to bond the upper and lower SiC structures to each other. Can be produced.

Description

Technical Field [0001] The present invention relates to a hollow SiC structure,

The present invention relates to a method of manufacturing a hollow SiC structure, and more particularly, to a method of manufacturing a hollow SiC structure that can easily form a structure having a hole therein.

In general, the use of graphite materials used in conventional semiconductor manufacturing processes has been limited to meet the limited requirements of the LED manufacturing process.

In order to meet these requirements, coatings of SiC, TaC, etc. on the surface of existing graphite parts have been improved to improve chemical resistance and to prevent the generation of foreign matter even at high temperatures.

As an example of such an example, SiC is deposited on the entire surface of a graphite disk in the registered patent No. 10-1178184 (Registered on August 23, 2012, a focus ring of a dry etching apparatus and a manufacturing method thereof) of the applicant of the present invention, Discloses a method of cutting a periphery of a SiC layer so as to expose a side surface thereof, cutting the exposed gpparite original plate in a transverse direction, and then removing a graphite original plate to obtain a pair of SiC original plates.

In this way, it is possible to easily obtain a plate-like or ring-shaped SiC structure, but it is very difficult to make a hollow structure using SiC.

This is because the mechanical strength of SiC is high and it takes a long time to process. Hollow structures may need to form holes with a certain diameter and length in the center of the structure. However, There is a problem that it is not very easy to process solid SiC.

As a result of the investigation of the inventors' prior art in connection with the present invention, the SiC hollow structure could not be found, and it is now known that SiC is coated on the graphite base in the above registered patent, and the graphite base is partially exposed, The hollow structure can be formed by leaving only the coated SiC.

However, in the case where the hollow portion of the hollow SiC structure is a fine or complex structure, there is a limit in forming the hollow SiC structure by the above method.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a method of manufacturing a hollow SiC structure capable of easily manufacturing a SiC structure having a hollow structure with a minute or complex structure.

According to an aspect of the present invention, there is provided a method of manufacturing an upper structure, comprising the steps of: a) preparing an upper structure and a lower structure having grooves formed on at least one side thereof; b) stacking the upper structure and the lower structure, Forming a hollow structure between the lower structures; and c) depositing SiC on the resultant structure of step b) to form a bonding structure for bonding the upper structure and the lower structure to each other.

The upper structure and the lower structure in the step a) may be grooves formed by mechanically processing the SiC masses, or SiC may be deposited on the graphite base, and the grooves may be formed by removing the graphite base.

The width of the lower structure is larger than the width of the upper structure and the bonding structure can be formed on the upper portion of the upper structure and the lower structure exposed on the lower side of the upper structure.

The lower structure may further include a seating surface on which a lower portion of the upper structure is inserted.

A method of manufacturing a hollow SiC structure according to the present invention comprises the steps of: preparing a SiC structure divided into upper and lower portions based on a hollow portion; depositing SiC on the divided SiC structure in contact with the SiC structure; The SiC structure can be manufactured regardless of the shape of the hollow portion.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flowchart of a manufacturing process of a hollow SiC structure according to a preferred embodiment of the present invention. FIG.
FIGS. 2 to 5 are cross-sectional views illustrating a manufacturing process of a hollow SiC structure manufactured according to a preferred embodiment of the present invention.

Hereinafter, a method of manufacturing a hollow SiC structure according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a flow chart of a manufacturing process of a hollow SiC structure according to a preferred embodiment of the present invention, and FIGS. 2 to 5 are cross-sectional views illustrating a manufacturing process of a hollow SiC structure according to the present invention.

1 to 5, a method of manufacturing a hollow SiC according to a preferred embodiment of the present invention includes a step S1 of forming an upper structure 10 having grooves 11 on one surface thereof, A step S2 of forming a lower structure 20 having an upper structure 10 and a lower structure 20 and forming grooves 11 and 21 formed on the upper structure 10 and the lower structure 20 to face each other to form a hollow portion 30 And the upper structure 10 and the lower structure 20 are stacked to form a bonding structure 40 by depositing SiC on the upper structure 10 and the lower structure 20 so that the upper structure 10 having the hollow portion 30 at the center, (S4) joining the lower structure (10) and the lower structure (20).

Hereinafter, a method of manufacturing a hollow SiC structure according to a preferred embodiment of the present invention will be described in detail.

First, in step S1 (FIG. 2), the upper structure 10 is formed. The upper structure 10 may mechanically process the SiC mass to form the grooves 11. The upper structure 10 may be formed by processing the graphite base into the shape of the grooves 11 and then forming the grooves 11 on the graphite base SiC, and then removing the graphite base.

In particular, the superstructure 10 has a width that is narrower than the width of the substructure 20 to be described later.

Next, in step S2 (FIG. 3), a substructure 20 is formed. The lower structure 20 is wider than the upper structure 10 as described above.

The manufacturing method can be manufactured by using a mechanical working or a graphite base as in the manufacture of the upper structure 10 in advance.

In particular, in the case of the lower structure 20, a seating surface 22 on which the bottom of the periphery of the groove 11 of the upper structure 10 can be seated can be formed around the groove 21. The seating surface 22 is a lower surface than the one surface of the lower structure 20 on which the groove 21 is formed.

That is, a wall surface is vertically provided between the seating surface 22 formed on the lower structure 20 and the upper surface of the lower structure 20 surrounding the seating surface 22, and the upper structure 10 is inserted and fixed.

4), the groove 21 and the seating surface 22 of the lower structure 20 are arranged to face upward. In the upper structure 10, the groove 11 is positioned on the bottom surface So that the hollow portion 30 is formed by the recessed grooves 11 and 21 by engaging with the lower structure 20 on which the seating surface 22 is formed.

Such a coupling state does not cause a clearance between the upper structure 10 and the lower structure 20, and in particular, SiC deposited thereafter can prevent SiC from being deposited on the hollow portion 30. [

Then, in step S4 (FIG. 5), the resultant of step S3 is charged into the deposition furnace, and SiC is deposited. At this time, SiC is deposited on the upper part of the lower structure 20 where a part of the upper surface is exposed on the upper part of the upper structure 10 and the lower side of the side surface of the upper structure 10.

As described above, SiC is deposited to a predetermined thickness or more to form a bonding structure 40 for bonding the upper structure 10 and the lower structure 20 to each other.

As described above, since the SiC does not flow into the hollow portion 30, the shape of the hollow portion 30 can be maintained as it is. The SiC is deposited on the upper and side surfaces of the upper structure 10 and the lower structure 20, The upper structure 10 and the lower structure 20 are joined to each other with the structure 40.

As described above, since the structure having the hollow portion 30 can be manufactured using the upper structure 10 and the lower structure 20 having the grooves 11 and 21, the hollow structure can be easily manufactured.

That is, according to the present invention, a groove is formed without forming a hollow portion directly in the SiC structure, so that it is easier to process and a finer hollow portion can be formed.

The grooves 11 and 21 are formed in the upper structure 10 and the lower structure 20 respectively but the grooves are formed in only one side of the upper structure 10 or the lower structure 20, It is also possible to use the groove as the hollow portion 30.

The upper structure 10 having a flat bottom is seated on the seating surface 22 while the groove 21 and the seating surface 22 are formed on the lower structure 20, The grooves 21 form the hollow portion 30 even if the grooves 21 are formed by vapor deposition.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention will be.

10: superstructure 11: groove
20: Substructure 21: Home
22: seat surface 30: hollow portion
40: bonding structure

Claims (4)

a) preparing an upper structure and a lower structure having grooves on at least one side thereof;
b) stacking the upper structure and the lower structure such that hollows are formed between the upper structure and the lower structure by the grooves; And
c) depositing SiC on top of the result of step b) to form a bonded structure where the upper structure and the lower structure are bonded to each other,
Wherein a width of the lower structure is larger than a width of the upper structure,
Wherein the bonding structure is formed on an upper portion of the lower structure exposed on the upper portion of the upper structure and the lower side of the upper structure.
The method according to claim 1,
The upper structure and the lower structure in step a)
Wherein a groove is formed by mechanically processing the SiC mass, or after the SiC is deposited on the graphite base, the graphite base is removed to form a groove.
delete The method according to claim 1,
The substructure may comprise:
And a seating surface on which a lower portion of the upper structure is inserted and seated.

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