KR101739882B1

KR101739882B1 - Pulsed power modulator

Info

Publication number: KR101739882B1
Application number: KR1020150102809A
Authority: KR
Inventors: 류홍제; 장성록; 유찬훈
Original assignee: 한국전기연구원
Priority date: 2015-07-21
Filing date: 2015-07-21
Publication date: 2017-05-25
Also published as: WO2017014368A1; KR20170010992A

Abstract

The present invention discloses a pulsed power supply. The pulse power supply according to the preferred embodiment of the present invention includes a semiconductor switching unit connected in series and a bypass switching unit implemented as a semiconductor switching device (for example, IGBT) including anti-parallel diodes at both ends of an energy storage unit in parallel do. When the pulse power is supplied, the bypass switching unit is maintained in the off state, and the anti-parallel diode is used as the bypass diode to protect the devices when malfunction occurs. When the pulse power is not supplied, the bypass switching unit By discharging the voltage charged in the load device through the semiconductor switching element included in the bypass switching part, the load device can be efficiently discharged (e.g., discharged) without adding a separate configuration (e.g., discharge resistor) Thereby reducing the falling time of the power pulse, thereby minimizing unnecessary power consumption.

Description

[0001] Pulsed power modulator [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pulse power supply apparatus, and more particularly, to a pulse power supply apparatus that provides a discharge path capable of quickly discharging a charged voltage or energy to a load apparatus.

Generally, a high voltage pulse generation circuit supplies a pulse power to a load device requiring high voltage such as various test sites or a plasma generation device (PSII, etc.). The conventional high voltage pulse generation circuit has problems in terms of device life, There have been found many problems in terms of increase in frequency, control of pulse voltage, and necessity of a DC high voltage power source.

For example, a system using a pulse generator using a spark gap and a system using a vacuum tube switch have a short life span and can not control the pulse width. In addition, there is a limitation in raising the pulse repetition rate, and a DC high voltage power supply circuit is required.

In addition, the method using a pulse transformer has difficulties in obtaining a fast rise time of the pulse due to the inductance of the transformer, and a circuit such as a reset circuit is added due to magnetic saturation of the transformer, And it is difficult to increase the width.

In addition, efforts have been made to use an Insulated Gate Bipolar Transistor (IGBT) as a semiconductor switch instead of a spark gap switch in a Max pulse generator.

IGBTs have a long lifetime and can overcome the disadvantages of mechanical switches used in conventional Max pulse generators, such as enabling pulse repetition rate and pulse width control when using them. However, the problems of driving switches, The constraints on the product are difficult, which may cause problems in the reliability of the product.

The most important technology in the pulse generator using IGBT is to overcome the voltage and current rating of the switch. Unlike conventional gas discharge switches, IGBTs have small voltage and current ratings.

Instead of using one IGBT in place of one spark gap switch, a plurality of IGBTs as many as desired can be connected in series so as to withstand the voltage rating and turn on / off them simultaneously. In this case, when the IGBTs are turned on or off, a voltage imbalance is likely to occur due to the difference in the driving timing. If the voltage rating is exceeded due to the voltage imbalance, the IGBT is immediately damaged.

Also, when the IGBTs are driven in series, each switch needs an independent driving power source, and the intensity of the isolation power of the independent driving power source must be further increased toward the top of the serial switch configuration. Therefore, one of the most difficult techniques for high-voltage driving is known as the insulation technology of the driving power source.

As a technique using the IGBT in the related art, there is known a method of using an IGBT and a transistor (hereinafter abbreviated as TR) together. Both of the Max pulse generator, the IGBT, and the power generator using the TR, The high-voltage charger used up to now has a problem that the overall size is very large.

In addition, both methods have a limitation on the pulse width. In the method using TR, there is a great restriction on the rise / fall time of the pulse due to the leakage inductance. In addition, the overall size of the device is large and the efficiency is low. In the method using the IGBT and TR, the arc generation protection is possible, but a complicated circuit is pointed out as a problem.

Accordingly, applicants and inventors of the present application have filed a patent application for a new type of pulse power supply system using a semiconductor switch in order to solve the above problems (Korean Patent No. 0820171, US Patent No. 7,843,087). The pulse power system of the patent (hereinafter referred to as the prior patent) has the advantage that life can be greatly improved, miniaturization is possible, and various control of the final output high voltage pulse can be performed.

The pulse power supply system of the prior patent includes a plurality of power stages in which power cells having semiconductor switches and charging capacitors are connected in series, a power inverter for supplying power for charging the capacitors of the power cells, a power inverter A control inverter for providing a control signal for generating a gate signal of the semiconductor switch and a gate power supply; a high-voltage insulation cable for supplying a control signal from the control inverter to each power cell; And a control loop connected to be supplied.

Here, the plurality of power stages are all connected in series. Since all the power cells are connected in series in each power stage, all the power cells in the pulse power supply system are all connected in series.

At this time, each power cell constituting the power stage has a semiconductor switch, for example, an IGBT and a charge capacitor connected in series. Also, in each power stage, both the semiconductor switch and the charge capacitors of the entire power cell are connected in series, and the semiconductor switches and charge capacitors of the entire power stage constituting the pulse power supply system are all connected in series.

Each of the power cells includes a bypass diode connected to both ends of the semiconductor switch and the capacitor, a rectifier diode connected to both ends of the charge capacitor, a gate signal for driving the semiconductor switch, And a power switch driver (gate drive circuit) for applying power.

These power cells are supplied with power for charging the capacitors through a power loop connected from the power inverter, and are supplied with control signals through a control loop connected from the control inverter.

That is, each power stage has a transformer comprised of a power loop and a control loop. When the power inverter supplies a high voltage power through the power loop, a voltage is supplied to each power cell through the power transformer to charge the capacitor, The control signal applied through the loop is applied to the power switch driver through the control transformer so that the gate signal for driving the semiconductor switch and the driving power are outputted.

In addition, in the pulse power supply system of the prior patent, the compensating winding connected between the power transformers of the upper and lower power stages is inserted so as to have a negative polarity so as to compensate the difference in charging voltage between the charging capacitors, Thereby solving the problem of imbalance in the charging voltage between the charging capacitors due to the difference.

On the other hand, in the above-described pulse power supply system, the entire charge capacitor is charged in parallel, and then the charge capacitors are connected in series through the switch to generate a high voltage pulse in such a manner that the charge capacitor is discharged in series at the same time.

However, there is a problem that unnecessary power consumption occurs due to addition of a discharge resistor in the pulse power supply device according to the general prior art as described above and the pulse power supply device according to the prior patent.

More specifically, referring to Fig. 1 showing an equivalent circuit of a general pulse power source device, as shown in Fig. 1A, the pulse power source device 10 repeatedly turns on and off the switch, A pulse power source is applied to the load 30 as shown in FIG. 1 (b). In addition, a resistance component as well as a capacitance component exist in the load device 30, Lt; / RTI >

This problem poses a serious problem when a water treatment and gas treatment apparatus requiring a high pulse repetition rate is applied as a load device. The prior art technique is applied to both ends of the load device 30 The discharging resistor 20 is connected to the discharging resistor 20 so that the voltage charged in the load device 30 is discharged through the discharging resistor 20 during a period in which the power supply pulse is not applied, thereby shortening the falling time. However, as the discharge resistance 20 becomes smaller, the falling time of the power supply pulse decreases, but the power loss becomes larger.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a pulse power supply device capable of minimizing a power supply pulse falling time while minimizing power loss.

According to an aspect of the present invention, there is provided a pulse power supply apparatus including: a semiconductor switch unit; An energy storage unit connected in series with the semiconductor switch unit to discharge a voltage charged in the semiconductor switch unit when the semiconductor switch unit is turned on; An energy supply unit for supplying electric energy to the energy storage unit; A bypass switching unit connected in parallel with the semiconductor switch unit and the energy storage unit so that the forward direction of the anti-parallel diode included in the energy storage unit coincides with the discharge direction of the energy storage unit; And a driving unit for driving the semiconductor switch unit and the bypass switching unit.

According to another aspect of the present invention, there is provided a pulse power supply device including a plurality of power cells, each of the plurality of power sources including a plurality of power sources, The cells may be connected in series with each other.

According to another aspect of the present invention, there is provided a pulse power supply apparatus, wherein a turn-on pulse signal and a turn-off pulse are sequentially inputted to a driving unit, and when the turn-on pulse signal is inputted, The bypass switch unit is turned on to turn off the voltage charged in the load device to the bypass unit when the turn-off pulse signal is inputted, Discharge can be performed through the switching unit.

According to another preferred embodiment of the present invention, the energy storage unit of the pulse power supply device includes a pair of charging capacitors connected in series to each other, and the energy supply unit includes a pair of rectifying diodes connected in series to each other, Wherein the switch unit includes a pair of semiconductor switches each of which is connected to the charge capacitor, wherein the bypass switch unit includes a pair of semiconductor switching elements, each of the semiconductor switching elements being connected to the charge capacitor connected in series with the charge capacitor, Respectively.

In addition, the energy storage unit of the pulse power supply according to another preferred embodiment of the present invention may include a charging capacitor, and the energy supply unit may be implemented as a rectifying circuit that receives the AC power and converts the AC power to DC power to charge the charging capacitor. have.

According to another preferred embodiment of the present invention, the driving unit of the pulse power supply unit turns on the semiconductor switch unit according to the turn-on pulse signal inputted from the control inverter, and turns on the semiconductor switch unit until the turn- A first driving unit for maintaining a state; And a second driving unit for turning on the bypass switching unit when a turn-off pulse signal is inputted from the control inverter.

In the pulse power supply device according to another preferred embodiment of the present invention, when the turn-off pulse signal is inputted from the control inverter, the second driving unit turns off the semiconductor switch unit after the first driving unit turns off the pre- The bypass switching unit can be turned on after the delay time has elapsed.

Also, in the pulse power supply apparatus according to another preferred embodiment of the present invention, the semiconductor switch unit and the bypass switching unit may be implemented as an IGBT (Insulated-Gate Bipolar Transistor).

According to another preferred embodiment of the present invention, there is provided a pulse power supply apparatus comprising: a power inverter for supplying power for charging the energy storage unit; A power loop for supplying power from the power inverter to an energy supply unit in each power cell; A control inverter for providing power and control signals to the semiconductor switch unit and the semiconductor switching unit; And a control loop for supplying a control signal from the control inverter to a driving unit in each power cell.

In the present invention, a bypass switching unit implemented in a semiconductor switching device (for example, an IGBT) including an anti-parallel diode is connected in parallel at both ends of a semiconductor switch unit connected in series and an energy storage unit. When the pulse power is supplied, the bypass switching unit is maintained in the off state, and the anti-parallel diode is used as the bypass diode to protect the devices when malfunction occurs. When the pulse power is not supplied, the bypass switching unit By discharging the voltage charged in the load device through the semiconductor switching element included in the bypass switching part, the load device can be efficiently discharged (e.g., discharged) without adding a separate configuration (e.g., discharge resistor) So that the falling time of the power pulse can be reduced, and unnecessary power consumption can be minimized.

1 is a diagram showing an equivalent circuit of a pulse power supply device according to the prior art and a waveform of a power supply pulse.
FIGS. 2A and 2B are diagrams showing a configuration of a pulse power source device according to a preferred embodiment of the present invention.
3 is a circuit diagram showing a detailed configuration of a driving unit according to a preferred embodiment of the present invention.
4 is a circuit diagram illustrating a turn-on mode operation of a driver according to a preferred embodiment of the present invention.
5 is a circuit diagram illustrating a sustain mode operation after the turn-on of the driving unit according to the preferred embodiment of the present invention.
6 is a circuit diagram illustrating a turn-off mode operation of a driving unit according to a preferred embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 2A is a diagram illustrating a configuration of a pulse power source apparatus according to a preferred embodiment of the present invention. FIG. 2B is a diagram illustrating a path for outputting a power pulse from a pulse power source apparatus to a load apparatus, Fig.

Referring to FIGS. 2A and 2B, the structure of the pulse power supply according to the preferred embodiment of the present invention is similar to that of the prior art (Korean Patent No. 0820171, US Pat. No. 7,843,087) A basic structure of a pulse power supply device for generating other high voltage pulses, for example, a plurality of power cells 200-1 to 200-24 are connected in series to constitute a power stage, The configuration in which the charge capacitors C_ST1, C_ST2, ... and the semiconductor switches IGBT1, IGBT2, ... are connected in series is not limited to the pulse power source shown in the above-mentioned prior art patents (Korean Patent No. 0820171, U.S. Patent No. 7,843,087) It is the same as the basic configuration of the system.

The pulse power supply device includes a plurality of power stages in which power cells are connected in series, a power inverter 400 for supplying power for charging the capacitors C_ST1, C_ST2, ... of the power cells, a high voltage insulation cable A power loop 600 connected to supply electric energy from the power inverter 400 to an energy supply unit in each power cell, a control signal for generating a gate signal and a gate power of the semiconductor switches IGBT1, IGBT2, And a control loop 500 connected to supply control signals from the control inverter 300 as the high-voltage insulation cable to the driving units 210-1, 210-2, ... in each power cell And is the same as the preceding patent in that it is constituted by

Similarly, in the above configuration, the power cells 200-1 to 200-24 supply power for charging the capacitors C_ST1, C_ST2, ... through the power loop 600 connected from the power inverter 400 And receives a control signal through the control loop 500 connected from the control inverter 300. [

Specifically, when the power inverter 400 supplies the high voltage power through the power loop 600, the voltages induced through the secondary windings of the power cells 200-1 to 200-24 are supplied to the respective power cells 200-1 The control signals applied by the control inverter 300 through the control loop 500 are supplied to the driving units 210-1, 210-2, ..., 210-2, ..., The semiconductor switching elements IGBT_BP1, IGBT_BP2, ..., which are applied to the driving units 210-1, 210-2, ... through the secondary side winding connected to the semiconductor switching elements IGBT1, IGBT2, ... and the bypass switching unit. So that the gate signal and the driving power are outputted.

In addition, although not shown in the drawings, the compensating windings connected between the power transformers of the upper and lower power stages may be inserted so as to have a negative polarity in order to compensate for the difference in charging voltage between the charging capacitors.

Other than the above, the same structure as that of the pulse power supply device shown in the above-mentioned prior patents will not be described in detail here.

Hereinafter, the detailed configuration and operation of the power cell according to the preferred embodiment of the present invention, which are different from the prior art, will be described.

The prior patent includes a rectifier diode in a power cell, a single capacitor connected in parallel with the rectifier diode, a single semiconductor switch coupled in series with the capacitor, a single bypass diode, and a single power switch driver, One power cell according to the example includes therein an energy storing portion implemented with a pair of charging capacitors, an energy supplying portion implemented with a pair of rectifying diodes, a semiconductor realized by including a pair of semiconductor switches, A switch unit, a bypass switching unit including a pair of semiconductor switching elements, and a pair of drivers. Here, each of the pair of drivers is composed of a first driver for driving the semiconductor switch and a second driver for driving the semiconductor switching element.

The pulsed power supply apparatus of the embodiment shown in FIGS. 2A and 2B includes 24 power cells 200-1 through 200-24 connected in series. The pair of charging capacitors C_ST1 and C_ST2 included in the power cell of the present invention are connected in series and a pair of rectifying diodes D_REC1 , D_REC2) are connected in series. The upper and lower ends of the pair of charging capacitors C_ST1 and C_ST2 connected in series are connected to the upper and lower ends of a pair of rectifying diodes D_REC1 and D_REC2 connected in series to each other to thereby connect the charging capacitors C_ST1 and C_ST2 and the rectifying diodes D_REC1, D_REC2) are connected in parallel.

One end of the secondary winding TR_Sec1 is connected to the connection node between the pair of charge capacitors C_ST1 and C_ST2 and the other end of the secondary winding TR_Sec1 is connected to the connection node between the pair of rectification diodes D_REC1 and D_REC2. Is connected to constitute a voltage-doubler rectification circuit.

Semiconductor switches IGBT1 and IGBT2 are connected in series to the pair of charge capacitors C_ST1 and C_ST2, and drivers 210-1 and 210-2 are connected to the semiconductor switches IGBT1 and IGBT2, respectively. The configuration and operation of the driving units 210-1 and 210-2 will be described with reference to Figs. 3 to 6. Fig.

The pair of semiconductor switching elements IGBT_BP1 and IGBT_BP2 included in the bypass switching unit includes an inverse parallel diode and the forward direction of the reverse parallel diode is connected to the load device 1000 through the charge capacitors C_ST1 and C_ST2, The charge capacitors C_ST1 and C_ST2 and the semiconductor switches IGBT1 and IGBT2 are connected in parallel so as to coincide with the direction in which the power supply pulse is supplied. The charge capacitors C_ST1 and C_ST2 of the respective power cells and the semiconductor switches IGBT1 and IGBT2 are connected to the charge capacitors C_ST1 and C_ST2 of the adjacent power cells and the semiconductor switches IGBT1 , IGBT2 ...) are connected in series with each other, so that the semiconductor switching elements IGBT_BP1, IGBT_BP2, ... connected in parallel with them are also connected in series with the semiconductor switching elements IGBT_BP1, IGBT_BP2, ... of each power cell .

2A and 2B, in the case of the semiconductor switching element IGBT_BP1, the gate receives a control signal from the driving unit 210-1, the collector is connected to the emitter of the semiconductor switch IGBT1, And is connected to one end of the capacitor C_ST1.

The antiparallel diodes included in the semiconductor switching elements IGBT_BP1 and IGBT_BP2 ... function as a bypass diode of the prior art, so that a part of the plurality of semiconductor switches is not synchronized and malfunctions or an abnormality occurs in the semiconductor switch The power supply pulse can be smoothly supplied to the load device 1000 by forming the bypass path.

2A and 2B, when each power cell is configured by a double voltage rectifier circuit, the semiconductor switches IGBT1 and IGBT2 and the charge capacitors C_ST1 and C_ST2 are connected to a series circuit The two charge capacitors C_ST1 and C_ST2 are simultaneously charged by the voltage supplied from one secondary side winding and the two semiconductor switches IGBT1 and IGBT2 are simultaneously turned on so that the voltages of the two charge capacitors C_ST1 and C_ST2 are simultaneously So that the voltage twice the voltage applied through the secondary winding can be charged and discharged.

The operation of the pulse power supply apparatus of the present invention will be described with reference to FIGS. 2A and 2B. First, the control inverter 300 calculates the amount (a) for turning on the plurality of semiconductor switches IGBT1, IGBT2, + &Lt; / RTI > polarity through the control loop 500.

The turn-on pulse signal is input to the driving units 210-1, 210-2, ... through the secondary windings C_TR1, C_TR2, ... of the driving units 210-1, 210-2, 2) is driven by a turn-on pulse signal to turn on the semiconductor switches IGBT1, IGBT2, ... connected thereto, and the second drive unit 210- 3) are not driven by the turn-on signal, and the semiconductor switching elements IGBT_BP1, IGBT_BP2,... Connected to the second driver 210b (see FIG.

When the driving units 210-1, 210-2, ... included in each power cell simultaneously turn on the semiconductor switches IGBT1, IGBT2 ..., a plurality of semiconductor switches IGBT1, IGBT2, The charge capacitors C_ST1 and C_ST2 ... perform discharges at the same time and a voltage pulse having a magnitude in which the voltages charged in the respective charge capacitors C_ST1 and C_ST2 ... are combined is output to the load device 1000. [ Here, the turned-on semiconductor switches IGBT1, IGBT2, ... are kept in a turned-on state until the control inverter 300 transmits a turn-off signal.

If any one of the serially connected semiconductor switches IGBT1, IGBT2, ... is not synchronized or an error occurs, the voltage discharged from the other power cells is supplied to the semiconductor switching elements IGBT_BP1, IGBT_BP2, And are transferred to the adjacent semiconductor switches through the included anti-parallel diodes.

2A and 2B, when the semiconductor switch IGBT1 malfunctions, the current that has passed through the semiconductor switch IGBT2 and the charge capacitor C_ST2 flows through the semiconductor switching element IGBT_BP1 included in the bypass switching unit, To the load device 1000 through the anti-parallel diode included in the load cell.

Thereafter, when the control inverter 300 transmits a turn-off signal through the control loop 500, the turn-off signal is transmitted to the secondary windings C_TR1, C_TR2, ... of the drivers 210-1, 210-2, The first driver 210a turns off the semiconductor switches IGBT1, IGBT2 ... connected to the first driver 210a and the second driver 210b turns off the semiconductor switches IGBT1, IGBT2, (IGBT_BP1, IGBT_BP2, ...) connected to the semiconductor switching elements.

When the semiconductor switching elements IGBT_BP1, IGBT_BP2, ... of the respective power cells are turned on, the voltages charged in the capacitance components inside the load device 1000 are connected to the semiconductor switching elements IGBT_BP1, IGBT_BP2 ...).

3 is a circuit diagram showing the detailed configuration of the driving units 210-1, 210-2,... According to the preferred embodiment of the present invention. Referring to FIG. 3, as described above, the driving units 210-1, 210-2,... Are composed of a first driving unit 210a and a second driving unit 210b.

The first drive unit 210a turns on the semiconductor switches IGBT1, IGBT2 ... and maintains the turn-on state when the turn-on pulse signal is inputted from the control inverter 300, When the signal is inputted, the semiconductor switches IGBT1, IGBT2, ... are turned off. On the other hand, when the turn-off pulse signal is inputted from the control inverter 300, the second driving part 210b turns on the semiconductor switching elements IGBT_BP1 and IGBT_BP2.

4 is a circuit diagram illustrating a turn-on mode operation of a driving unit according to a preferred embodiment of the present invention.

Referring to FIG. 4, the turn-on process of the semiconductor switch will be described. When a turn-on pulse signal is inputted to the driving units 210-1, 210-2,... In the first driving unit 210a, Capacitors C2 and C1 are charged. The current passing through the capacitor C2 passes through the resistor R7 to generate a voltage difference to turn on the transistor Q2 and decrease the voltage value applied to the gate of the MOSFET U1 by the current flowing through the resistor R3 and the transistor Q2, And the voltage value across the resistor R8 due to the current flowing through the MOSFET U1 is applied to the gate of the semiconductor switch (main IGBT) to turn on the semiconductor switches IGBT1, IGBT2, ....

5 is a circuit diagram illustrating a sustain mode operation after the turn-on of the driving unit according to the preferred embodiment of the present invention.

Referring to FIG. 5, once the MOSFET U1 is turned on by the process shown in FIG. 4, a voltage charged in the capacitor C2 is discharged, and a current flows continuously through the resistor R8. (Main IGBT) to maintain the semiconductor switches IGBT1, IGBT2, ... in a turned-on state.

6 is a circuit diagram illustrating a turn-off mode operation of a driving unit according to a preferred embodiment of the present invention.

Referring to FIG. 6, when a negative turn-off pulse signal is inputted to the driving unit while the turn-on state is maintained by the process shown in FIG. 5, the first driving unit 210a turns on the diodes D2 and D6 While the current flows, the capacitor C2 is charged while the transistor Q1 is turned on by the voltage drop at the resistor R6.

On the other hand, while the capacitor C1 is discharged through the diode D3, the MOSFET U1 is turned off, and the voltage applied to the gate of the semiconductor switch (Main IGBT) is discharged through the resistor R2, the transistor Q1 and the resistor R6, Off.

On the other hand, when a negative (-) turn-off pulse signal is input to the driving unit, the transistor Q3 is instantaneously turned on by the current flowing instantaneously along the resistor R12, the capacitor C3, and the resistor R13 in the second driving unit 210b, While the transistor Q3 is turned on, the current flowing through the inductor L1 flows through the transistor Q3, so that no voltage is applied to the gate of the semiconductor switching element IGBT_BP.

The transistor Q3 is turned off and the current flowing in the inductor L1 flows into the gate of the semiconductor switching element IGBT_BP and the semiconductor switching element IGBT_BP is turned on after the time delay due to the time constant determined by the resistor R12, the capacitor C3, IGBT_BP is turned on, so that the voltage charged in the load device 1000 is quickly discharged through the semiconductor switching element IGBT_BP.

In the turn-off mode, the reason why the semiconductor switch (main IGBT) is turned off and the semiconductor switching device IGBT_BP is turned on after generating a time delay in accordance with the time constant determined by the resistor R12, the capacitor C3, and the resistor R13, It is for the purpose of preventing a malfunction such as a noise effect caused by the simultaneous turn-off of the semiconductor switch (main IGBT) and the semiconductor switching element (IGBT_BP).

Up to now, a pulse power supply device according to a preferred embodiment of the present invention has been described with reference to FIGS. However, it will be understood by those skilled in the art that the present invention can be applied to other pulse power supply devices other than the pulse power supply devices shown in Figs. 2A and 2B.

For example, in the case of the above-mentioned prior patents (Korean Patent No. 0820171 and US Pat. No. 7,843,087), the bypass diode provided in each power cell is replaced with a semiconductor switching device including an anti-parallel diode, The first driving unit 210a for controlling the semiconductor switch and the second driving unit 210b for controlling the semiconductor switching device can be operated in the same manner as in the present invention.

In other words, the pair of charging capacitors included in each power cell shown in FIGS. 2A and 2B is connected to the energy storing unit, the pair of semiconductor switches is connected to the semiconductor switch unit, and the pair of rectifying diodes are connected in parallel with the energy storing unit The energy supply unit and the pair of semiconductor switching elements are equivalently expressed by the bypass switching unit respectively, the circuit shown in FIGS. 2A and 2B can be expressed in substantially the same structure as the application of the present invention to the prior patent, Therefore, the technical idea of the present invention can be applied as it is.

In addition, the preferred embodiments of the present invention described above with reference to FIGS. 2A to 6 and the prior patent include a plurality of power cells, but the technical idea of the present invention is that the pulse power supply device comprising one or more power cells All are applicable.

The present invention has been described with reference to the preferred embodiments. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the disclosed embodiments should be considered in an illustrative rather than a restrictive sense. The scope of the present invention is defined by the appended claims rather than by the foregoing description, and all differences within the scope of equivalents thereof should be construed as being included in the present invention.

200-1, 200-12, 200-13, 200-24: power cell
300: Control inverter
400: Power inverter
500: Control loop
600: Power loop
1000: Load device
C_ST1 to C_ST48: Charge capacitor
IGBT1 to IGBT48: Semiconductor switch
IGBT_BP1 to IGBT_BP48: Semiconductor switching elements
D_REC1 to D_REC48: rectifying diodes

Claims

A semiconductor switch section;
An energy storage unit connected in series with the semiconductor switch unit to discharge a voltage charged in the semiconductor switch unit when the semiconductor switch unit is turned on;
An energy supply unit for supplying electric energy to the energy storage unit;
A bypass switching unit connected in parallel with the semiconductor switch unit and the energy storage unit so that the forward direction of the anti-parallel diode included in the energy storage unit coincides with the discharge direction of the energy storage unit; And
And a driving unit for driving the semiconductor switch unit and the bypass switching unit.

The method according to claim 1,
Wherein the pulse power supply device includes a plurality of power cells,
Wherein the plurality of power cells are connected in series with each other so that the semiconductor switch unit and the energy storage unit included in the plurality of power cells are connected in series with each other.

The method according to claim 1,
A turn-on pulse signal and a turn-off pulse are sequentially inputted to the driving unit,
The semiconductor device according to claim 1, wherein when the turn-on pulse signal is input, the drive unit turns on the semiconductor switch unit to discharge the voltage charged in the energy storage unit to the load unit. When the turn-off pulse signal is inputted, And turns on the switching unit to discharge the voltage charged in the load device through the bypass switching unit.

The method according to claim 1,
Wherein the energy storage unit includes a pair of charge capacitors connected in series with each other,
Wherein the energy supply unit includes a pair of rectifying diodes connected in series to each other,
Wherein the semiconductor switch portion includes a pair of semiconductor switches each of which is connected to the charge capacitor,
Wherein the bypass switching unit includes a pair of semiconductor switching elements, and each semiconductor switching element is connected to both ends of the charge capacitor and the semiconductor switch connected in series with each other.

The method according to claim 1,
Wherein the energy storage unit includes a charge capacitor, and the energy supply unit is a rectification circuit that receives the AC power and converts the AC power to DC power to charge the charge capacitor.

2. The apparatus of claim 1, wherein the driving unit
A first driving unit for turning on the semiconductor switch unit according to a turn-on pulse signal input from the control inverter and maintaining the turn-on state of the semiconductor switch unit until a turn-off pulse signal is input; And
And a second driving unit for turning on the bypass switching unit when a turn-off pulse signal is inputted from the control inverter.

The method according to claim 6,
When the turn-off pulse signal is inputted from the control inverter, the second driving unit turns the bypass switching unit on after a predetermined delay time has elapsed after the first driving unit turns off the semiconductor switch unit Characterized by a pulsed power supply.

8. The method according to any one of claims 1 to 7,
Wherein the semiconductor switching unit and the bypass switching unit are implemented as IGBTs (Insulated-Gate Bipolar Transistors).

8. The method according to any one of claims 1 to 7,
A power inverter for supplying power for charging the energy storage unit;
A power loop for supplying power from the power inverter to an energy supply unit in each power cell;
A control inverter for providing power and control signals to the semiconductor switching unit and the bypass switching unit; And
And a control loop for supplying a control signal to the driving unit in each power cell from the control inverter.