KR101721262B1 - Resist stripper composition and a method of stripping resist using the same - Google Patents

Abstract

The present invention relates to a resist stripper composition comprising a secondary alkanolamine and an amide compound, and more particularly, to a resist stripper composition which inhibits the reaction between a secondary alkanolamine and an amide compound to ensure stability of the stripper solution.

Description

The present invention relates to a resist stripper composition and a stripping method using the resist stripper composition.

The present invention relates to a resist stripper composition, and more particularly, to a resist stripper composition for a flat panel display (FPD) substrate.

Photolithography processes are widely used to form a uniform pattern on a substrate in a manufacturing process of a flat panel display. In such a photolithography process, a photoresist is coated on a substrate and exposed, followed by dry or wet etching to form a pattern. At this time, the photoresist remaining on the metal wiring is removed by using the peeling liquid.

Korean Patent Registration No. 10-0950779 discloses a photoresist stripping solution comprising a tertiary alkanolamine, a cyclic organic solvent, a polar solvent and water. Although the peeling liquid composition has an effect of preventing corrosion of Al and Cu metal wiring lines, the use of tertiary amine and water has a disadvantage in that the peeling performance is low and the number of processes is not large.

Korean Patent Laid-Open No. 10-2007-0114037 is a peeling liquid composition comprising a corrosion inhibitor, a water-soluble organic amine compound, and a polar solvent. In addition to the general resist peeling method, it can be peeled off easily at a low temperature within a short time even in a lift- (IPA) technology that eliminates the need for additional rusting of metal wiring even if the rinse process is omitted. However, the primary amine reacts with the amide compound, which is a polar solvent, so that the stability of the chemical solution can not be secured in a long process or storage.

Japanese Patent Application Laid-Open No. 9-152721 discloses a release liquid composition containing an alkanolamine, a hydroxylamine, a diethylene glycol monoalkyl ether, a sugar compound such as sorbitol as a repellent, and water. However, the corrosion inhibiting effect of the composition on the metal film is insignificant.

The present invention has been made to solve the above problems of the prior art and it is an object of the present invention to provide a semiconductor device which is excellent in the ability to remove a resist pattern and a dry / wet etching residue, And a method for peeling a resist using the resist composition.

(B) an amide compound represented by formula (2), (c) an amide compound represented by formula (3), (d) a polar solvent, and (e) a corrosion inhibitor And a resist stripper composition.

Wherein R ₁ and R ₂ are each independently selected from the group consisting of an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, a substituted or unsubstituted An alkyl group having 1 to 10 carbon atoms substituted with an alkoxy group having 1 to 10 carbon atoms, a phenyl group or a benzyl group, provided that at least one of R ₁ and R ₂ is a hydroxyalkyl group having 1 to 10 carbon atoms,

R ₃ and R ₄ are each independently selected from the group consisting of hydrogen, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, and an alkoxy group having 1 to 10 carbon atoms Or an amino group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, and R ₃ and R ₄ may form a ring together.

The present invention also relates to a composition comprising (a) 3 to 20% by weight of an alkanolamine compound represented by formula (1), based on the total weight of the composition; (B) from 20 to 80% by weight of the amide compound represented by the general formula (2); (C) 1 to 30% by weight of the amide compound represented by the general formula (3); 10 to 70% by weight of the polar solvent (d); And (e) 0.01 to 5% by weight of a corrosion inhibitor.

Also,

Depositing a conductive metal film on the flat panel display substrate,

Forming a resist film on the conductive metal film;

Selectively exposing the resist film;

Developing the exposed resist film to form a resist pattern;

Etching the conductive metal film using the resist pattern as a mask; And

And removing the resist, which has been modified and cured by the resist pattern formation and etching after the etching process, using the resist stripper composition of the present invention.

The resist stripper composition of the present invention has excellent removability of resist patterns and dry / wet etch residues and is excellent in corrosion resistance of metal wiring including aluminum and / or copper. Therefore, in order to realize high resolution, The manufacturing process of the flat panel display device and the manufacturing process of the flat panel display device using the copper wiring. In addition, since it is possible to process a large number of substrates, it can greatly contribute to cost reduction.

(B) an amide compound represented by formula (2), (c) an amide compound represented by formula (3), (d) a polar solvent, and e) a corrosion inhibitor, and the following components will be described.

(a) an alkanolamine represented by the general formula (1)

[Chemical Formula 1]

R ₁ and R ₂ each independently represent an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, a substituted or unsubstituted C1- An alkyl group having 1 to 10 carbon atoms substituted with an alkoxy group having 1 to 10 carbon atoms, a phenyl group or a benzyl group, provided that at least one of R ₁ and R ₂ is a hydroxyalkyl group having 1 to 10 carbon atoms.

Examples of the alkanolamine represented by Formula 1 include diethanolamine, dipropanolamine, monomethylethanolamine, dibutanolamine, 2- (ethylamino) ethanol, and (ethoxymethylamino) They may be used alone or in combination of two or more.

The alkanolamine can penetrate into the polymer matrix of the resist modified or crosslinked under various process conditions such as dry or wet etching, ashing or ion implant processing, . The action of the alkanolamine is to form an empty space in a structurally weak part in the resist remaining on the substrate, thereby deforming the resist into amorphous polymer gel state so that the resist attached to the upper part of the substrate can be easily removed do.

Further, by using a secondary amine as the alkanolamine, it is possible to secure a release liquid composition which is excellent in the peeling performance and the cumulative sheet-to-sheet performance and in stability.

The alkanolamine represented by the formula (1) is preferably 3 to 20% by weight, more preferably 5 to 15% by weight based on the total weight of the composition. If it is less than 3% by weight, a problem of lowering the resist peeling force is caused. If it exceeds 20% by weight, it causes an increase in the rapid corrosion rate of the metal wiring made of aluminum or aluminum alloy and copper or copper alloy.

(b) an amide compound represented by the general formula (2)

(2)

Wherein R ₃ and R ₄ are each independently selected from the group consisting of hydrogen, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, a carbon number substituted with an alkoxy group having 1 to 10 carbon atoms An amino group substituted or unsubstituted with an alkyl group having 1 to 10 carbon atoms or an alkyl group having 1 to 4 carbon atoms, and R ₃ and R ₄ may form a ring together.

Specific examples of the amide compound represented by Formula 2 include formamide, N-methylformamide, N, N-dimethylformamide, etc. These may be used alone or in combination of two or more.

The amide compound represented by the general formula (2) is a strongly alkaline aprotic polar solvent and is very effective for decomposition and dissolution of a resist polymer degraded or crosslinked by dry etching or the like. In view of the dissolution capacity of the resin as the main material of the resist, And it exerts an excellent effect as compared with the conventional method.

The content of the amide compound represented by the general formula (2) is preferably 20 to 80% by weight, more preferably 40 to 70% by weight based on the total amount of the composition. When it is contained in the above-mentioned content range, it is advantageous to exhibit the removal performance of the resist polymer modified or crosslinked by etching or the like, and at the same time, the effect of increasing the number of treatments is also advantageously exhibited.

(c) an amide compound represented by the general formula (3)

(3)

In Formula 3, R ₁ and R ₂ are of 1 to 10 carbon atoms in the alkyl group, having 2 to 10 carbon atoms an alkenyl group, having 1 to 10 carbon atoms of each is the same as, R1 and R2 and R ₁ and R ₂ of formula independently At least one of R < ₁ > and R < ₂ > represents a C1-10 alkyl group, a C1-10 Hydroxyalkyl group.

The amide compound represented by Formula 3 is a reaction product of (a) an alkanolamine compound represented by Formula (1) and (b) an amide compound represented by Formula (2) The reaction of the amide compound can be suppressed to maintain the stability of the exfoliation solution, and (b) an effect effective for decomposition and dissolution of the resist polymer together with the amide compound is exhibited.

Specific examples of the amide compound represented by the above formula (c) include N, N-bis (2-hydroxyethyl) formamide, N, N-bis (2- hydroxypropyl) Hydroxyethyl) -N-methylformamide, etc. These may be used singly or in combination of two or more.

The content of the amide compound (c) represented by the general formula (3) is preferably 1 to 30% by weight, more preferably 3 to 20% by weight based on the total amount of the composition. When the amount of the amide compound (c) represented by the formula (3) is less than 1% by weight, the effect of inhibiting the reaction between the alkanolamine compound represented by the formula (1) and the amide compound represented by the formula (2) %, The removal performance of the resist polymer degraded or crosslinked by etching or the like is deteriorated.

(d) polar solvent

(d) The polar solvent assists the amide compound represented by the above formula (b) (2) to (a) dissolve the resist polymer gelled by the alkanolamine compound represented by the formula (1) The removal of the peeling liquid by water in the rinsing process is facilitated, and the re-precipitation of the dissolved resist in the peeling liquid is minimized.

Examples of the polar solvent (d) include a protonic polar solvent and an aprotic polar solvent, which may be used singly or in combination. Specific examples of the protonic polar solvent include ethylene glycol monomethyl ether (MG), diethylene glycol monomethyl ether (MDG), triethylene glycol monomethyl ether (MTG), polyethylene glycol monomethyl ether (MPG), ethylene glycol (EG), diethylene glycol monoethyl ether (EDG), ethylene glycol monobutyl ether (BG), diethylene glycol monobutyl ether (BDG), triethylene glycol monobutyl ether (BTG), propylene glycol monomethyl Ether (MFG), dipropylene glycol monomethyl ether (MFDG), etc. These may be used singly or in combination of two or more. Specific examples of the aprotic polar solvent include pyrrolidone compounds such as N-methylpyrrolidone (NMP) and N-ethylpyrrolidone; Imidazolidinone compounds such as 1,3-dimethyl-2-imidazolidinone and 1,3-dipropyl-2-imidazolidinone; lactone compounds such as? -butyrolactone; Sulfoxide compounds such as dimethylsulfoxide (DMSO) and sulfolane; Phosphate compounds such as triethyl phosphate, tributyl phosphate and the like; Carbonate compounds such as dimethyl carbonate, ethylene carbonate, and the like; Cresol, meta-cresol, para-cresol or cresol mixture. These may be used singly or in combination of two or more kinds.

The polar solvent (d) is preferably contained in an amount of 10 to 70% by weight, more preferably 20 to 60% by weight based on the total weight of the composition. When the content is in the above-mentioned range, there is no fear of decrease in the number of treatments due to deterioration of detergency of the peeling solution by water, and the problem of the relative decrease in the content of the ethanolamine compound and the amide compound can be avoided.

(e) Corrosion inhibitor

(e) The type of corrosion inhibitor is not particularly limited, and examples thereof include benzotriazole, tolythriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, 2 '- [[[ethyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] Methyl] imino] bisethanol, 2,2 '- [[[methyl-1-hydroxy-benzotriazol- Methyl] imino] biscarboxylic acid, 2,2 '- [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] , 2 '- [[[amine-1-hydrogen-benzotriazol-1-yl] methyl] imino] bisethanol and 1,2-benzoquinone, And quinone compounds such as 4-naphthoquinone and anthraquinone. These compounds may be used singly or in combination of two or more .

The corrosion inhibitor (e) is preferably contained in an amount of 0.01 to 5% by weight, more preferably 0.01 to 3% by weight based on the total weight of the composition. If it is less than 0.01% by weight, corrosion may occur in a metal wiring made of aluminum or an aluminum alloy and a copper or copper alloy in a peeling or DI rinse process. If it exceeds 5% by weight, secondary contamination may occur due to precipitation during a long peeling process .

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples. However, the following examples and comparative examples are provided for illustrating the present invention, and the present invention is not limited by the following examples and comparative examples, and various modifications and changes may be made.

Examples 1 to 12 and Comparative Examples 1 to 5: Preparation of resist stripper composition

The components and contents described in Table 1 below were mixed to prepare a resist stripper composition.

division (a)
[weight%] (b)
[weight%] (c)
[weight%] (d)
[weight%] (e)
[weight%] Example 1 DEA 10 NMF 53 BHF 10 BDG 25 - - E-1 2 Example 2 DEA 10 NMF 53 BHF 10 BDG 25 - - E-2 2 Example 3 DEA 10 NMF 52 BHF 10 BDG 25 - - E-3 3 Example 4 DEA 10 NMF 53 BHF 10 MDG 25 - - E-1 2 Example 5 DEA 10 NMF 53 BHF 10 BDG 15 BGL 10 E-1 2 Example 6 DEA 10 NMF 53 BHF 10 MDG 15 BGL 10 E-1 2 Example 7 DEA 10 NMF 53 BHF 10 BDG 15 NMP 10 E-1 2 Example 8 DEA 10 NMF 53 BHF 10 - - NMP 25 E-1 2 Example 9 DEA 10 DMF 53 BHF 10 BDG 25 - - E-1 2 Example 10 DEA 10 DMF 53 BHF 10 BDG 15 BGL 10 E-1 2 Example 11 MMEA 10 NMF 53 HMF 10 BDG 25 E-1 2 Example 12 MMEA 10 NMF 53 HMF 10 BDG 25 NMP 10 E-1 2 Comparative Example 1 - - NMF 54 - - BDG 25 NMP 20 E-1 One Comparative Example 2 DEA 15 - - - - BDG 55 NMP 27 E-1 3 Comparative Example 3 DEA 15 NMF 82 - - - - - - E-1 3 Comparative Example 4 DEA 10 NMF 55 - - BDG 25 NMP 10 - - Comparative Example 5 DEA 10 NMF 53 - - BDG 25 NMP 10 E-1 2 Comparative Example 6 MEA 10 NMF 53 - - BDG 25 NMP 10 E-1 2

 DEA: diethanolamine

MMEA: Monomethylethanolamine

MEA: Monoethanolamine

NMF: N-methylformamide

DMF: N, N-dimethylformamide

BHF: N, N-bis (2-hydroxyethyl) formamide

HMF: N- (2-hydroxyethyl) -N-methylformamide

BDG: diethylene glycol monobutyl ether

MDG: diethylene glycol monomethyl ether

GBL:? -Butyrolactone

NMP: N-methylpyrrolidone

E-1: benzotriazole

E-2: 2,2 '- [[[ethyl-1H-benzotriazol-1-yl] methyl] imino] bisethanol

E-3: 1,4-benzoquinone

Experimental Example: Peeling performance, processing performance, evaluation of metal wiring damage, evaluation of metal wiring damage in rinsing process, and stability of stripping solution

1. Evaluation of peeling liquid peeling performance

In order to confirm the peeling effect of the resist stripping composition, a Mo / Al layer is formed on a glass substrate by a thin film sputtering method, and then a photoresist pattern is formed. Thereafter, a wet etching and a dry etching And a substrate on which a metal film was etched were prepared. After the resist stripping composition was maintained at a constant temperature of 50 캜, an object was immersed for 10 minutes to evaluate the stripping force. Then, the substrate was cleaned with pure water for 1 minute to remove the peeling liquid remaining on the substrate, and the substrate was completely dried with nitrogen to remove pure water remaining on the substrate after cleaning. The removal performance of the modified or cured resist and the dry etching residue of the substrate was confirmed using a scanning electron microscope (SEM, Hitachi S-4700). The results are shown in Table 2, Usually, △ and bad are marked with ×.

A Cu / Mo-Ti layer was formed on the substrate and the same evaluation was made on the result, and a similar result was obtained.

2. Performance evaluation of stripping liquid treatment

To evaluate the number of processed substrates of the resist stripper solution, 1 to 5% by weight of a stripped photoresist (photoresist solidified by heat treatment at 130 캜 for one day by removing all the solvent) was sequentially dissolved to prepare a stripper solution composition Respectively. After the photoresist pattern was formed, the Mo / Al wiring substrate, on which the metal film was etched by wet etching and dry etching, was immersed in the peeling liquid composition at 50 占 폚 for 10 minutes, washed and dried, and examined under a scanning electron microscope S-4700) was used to confirm the timing of the release of the residue. The results are shown in Table 2 below. Excellent results are shown as " good ", good results are shown as "? &Quot;

Similar evaluations were performed on Cu / Mo-Ti interconnection substrates etched with metal films, and similar results were obtained.

division Peeling performance Processing performance
(Solidified resist concentration) Wet etching Dry etching 1 wt% 2 wt% 3 wt% 4 wt% 5 wt% Example 1 ◎ ◎ ◎ ◎ ○ △ X Example 2 ◎ ○ ◎ ◎ ◎ ○ X Example 3 ◎ ◎ ◎ ◎ ◎ ○ X Example 4 ◎ ◎ ◎ ◎ ◎ ○ △ Example 5 ◎ ○ ◎ ◎ ○ △ X Example 6 ◎ ◎ ◎ ◎ ○ △ X Example 7 ◎ ◎ ◎ ◎ ◎ ○ X Example 8 ◎ ◎ ◎ ◎ ○ △ △ Example 9 ◎ ◎ ◎ ◎ ◎ ○ X Example 10 ◎ ◎ ◎ ◎ ◎ ○ X Example 11 ◎ ◎ ◎ ◎ ◎ ○ X Example 12 ◎ ○ ◎ ◎ ○ △ X Comparative Example 1 ○ X △ X X X X Comparative Example 2 ○ △ ○ △ X X X Comparative Example 3 ◎ ◎ ◎ △ △ △ X

From the results shown in Table 2, the resist stripping liquid compositions of Examples 1 to 12 of the present invention not only excelled in the resist stripping force by wet etching but also exhibited excellent performance for resist and etching residue removal after dry etching . However, in the case of Comparative Example 1 which does not contain an alkanolamine compound, the photoresist after the wet etching process showed normal performance, but the removal effect of the resist and the etching residue after dry etching was poor. Also in the case of Comparative Example 2 which does not contain an amide compound, the resist removal performance against the dry etching substrate was poor.

As a result of evaluating the number of substrates processed in Table 2, the resist stripper compositions of Examples 1 to 12 of the present invention began to generate residues of the substrate from the time when 3 to 4% by weight of the solidified resist was dissolved , Alkanolamine compounds, amide compounds, and Comparative Examples 1 to 3 which did not contain a polar solvent, residues started to be formed at the time when the solidified resist was dissolved by 1 to 2% by weight. From these results, it can be confirmed that the resist stripper composition of the present invention can process a larger number of substrates than the conventional stripper composition.

3. Evaluation of metal wastewater power of stripping liquid

Evaluation of the corrosion inhibiting ability of the resist stripping solution composition on metal wiring was carried out using a substrate on which Mo / Al and Cu / Mo-Ti wiring lines were exposed. First, the release liquid composition was maintained at a constant temperature of 60 캜, and the substrate was immersed for 30 minutes, washed, dried, and evaluated using a scanning electron microscope (SEM, Hitachi S-4700). The results are shown in Table 3 below. Excellent results are shown as?, Good results as?, Average as?, And defects as?.

4. Evaluation of stripping rinse process metal wiring power

A substrate on which Mo / Al and Cu / Mo-Ti wirings were exposed was used for evaluating the corrosion inhibiting ability against metal wiring in the DI rinse process of the stripper composition after peeling off the resist. The substrate was immersed for 5 minutes at room temperature in a diluted solution prepared by mixing 1% by weight of the peeling liquid composition and 99% by weight of pure water, washed and dried, and evaluated using a scanning electron microscope (SEM, Hitachi S-4700). The results are shown in Table 3 below. Excellent results are shown as?, Good results as?, Average as?, And defects as?.

division Separation liquid Metal wiring power Rinse process metal wiring power Mo / Al Cu / Mo-Ti Mo / Al Cu / Mo-Ti Example 1 ◎ ◎ ○ ◎ Example 2 ◎ ◎ ○ ◎ Example 3 ◎ ◎ ○ ◎ Example 4 ◎ ◎ ○ ◎ Example 5 ◎ ◎ ◎ ◎ Example 6 ◎ ◎ ◎ ○ Example 7 ◎ ◎ ◎ ◎ Example 8 ◎ ◎ ◎ ◎ Example 9 ◎ ◎ ○ ◎ Example 10 ◎ ◎ ◎ ○ Example 11 ◎ ◎ ○ ◎ Example 12 ◎ ◎ ◎ ◎ Comparative Example 4 ○ × × × Comparative Example 6 ◎ ○ × ×

From the results shown in Table 3, it can be seen that the peeling liquid compositions of Examples 1 to 12 of the present invention exhibited excellent corrosion inhibiting performance against metal wiring in the peeling liquid itself or the rinsing process, while containing the corrosion inhibitor of Comparative Example 4 And the primary amine in Comparative Example 6 was contained in the rinse process even though it contained a corrosion inhibitor.

5. Stability evaluation of release liquid

To evaluate the process stability of the resist stripper composition, 500 g of the stripper composition was placed in a 1000 ml beaker, and the composition was kept at a constant temperature of 50 캜 for 7 days, and then GC-MS (Thermo electronic co., Trace GC ultra + DSQ) The results are shown in Table 4. The results are shown in Table 4. < tb > < TABLE > Id = Table 4 Columns = 5 < tb > After leaving for 7 days, the peeling performance and the processing performance were evaluated. The results are shown in the following Table 5, and the results are shown as " good ", " good ", " good "

division Alkanolamine Compound Weight% Reaction product Early After 7 days Example 7 10 8.7 - Example 12 10 8.4 - Comparative Example 5 10 6.6 has exist Comparative Example 6 10 1.2 has exist

From the results shown in Table 4, it can be seen that the content of the primary amine added as the alkanolamine compound in Comparative Example 6 is drastically decreased, and the reaction product produced by the reaction of the alkanolamine and the amide compound can be identified . In Comparative Example 5, the secondary amine added with the alkanolamine compound showed a relatively small decrease in the content as compared with the primary amine, but the reaction product of the alkanolamine and the amide compound was produced. In other words, it can be seen that the decrease in the content of the amine compound in the comparative example is great, and that the decrease in the amine compound is reduced not only by the evaporation but also by the reaction with the amide compound represented by the formula (2). On the other hand, in Example 7 and Example 12 of the present invention, the content of the alkanolamine compound is relatively small. The reaction product was not separated in GC-MS.

division Peeling performance Processing performance
(Solidified resist concentration) Wet etching Dry etching 1 wt% 2 wt% 3 wt% 4 wt% 5 wt% Example 7 Early ◎ ◎ ◎ ◎ ◎ ○ X After 7 days ◎ ◎ ◎ ◎ ◎ △ X Example 12 Early ◎ ○ ◎ ◎ ○ △ X After 7 days ◎ ◎ ◎ ◎ ○ △ X Comparative Example 5 Early ◎ ◎ ◎ ◎ ◎ ○ X After 7 days ◎ ◎ ◎ ○ △ X X Comparative Example 6 Early ◎ ◎ ◎ ◎ ○ X X After 7 days ◎ ○ ○ △ △ X X

From the results shown in Table 5, it was found that the resist stripper compositions of Example 7 and Example 12 of the present invention had no change in the peeling performance and the processability after the resist film was left to stand at 50 占 폚 for 7 days, There was no significant change in the peeling performance of the peeling liquid composition, but peeling performance deteriorated in the evaluation of the performance of the peeling solution. From these results, it can be confirmed that the resist stripper composition of the present invention is more stable than the conventional stripper composition.

Claims (7)

A resist composition comprising (a) an alkanolamine represented by the formula (1), (b) an amide compound represented by the formula (2), (c) an amide compound represented by the formula (3), (d) a polar solvent, With the release liquid composition,
(c) the amide compound represented by formula (3) is a reaction product of (a) an alkanolamine represented by formula (1) and (b) an amide compound represented by formula (2).
[Chemical Formula 1]

(2)

(3)

Wherein R ₁ and R ₂ are each independently selected from the group consisting of an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, a carboxyl group, a substituted or unsubstituted An alkyl group having 1 to 10 carbon atoms substituted with an alkoxy group having 1 to 10 carbon atoms, a phenyl group or a benzyl group, provided that at least one of R ₁ and R ₂ is a hydroxyalkyl group having 1 to 10 carbon atoms,
In Formula 2, R ₃ and R ₄ are each independently selected from the group consisting of hydrogen, an alkyl group having 1 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a carboxyl group, an alkyl group having 1 to 10 carbon atoms substituted with an alkoxy group having 1 to 10 carbon atoms, An amino group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, and R ₃ and R ₄ may form a ring together. The method according to claim 1,
With respect to the total weight of the composition,
(A) 3 to 20% by weight of the alkanolamine compound represented by the formula (1);
(B) from 20 to 80% by weight of the amide compound represented by the general formula (2);
(C) 1 to 30% by weight of the amide compound represented by the general formula (3);
10 to 70% by weight of the polar solvent (d); And
(E) 0.01 to 5% by weight of a corrosion inhibitor. The method according to claim 1,
The alkanolamine represented by the above formula (1) (a) is preferably selected from the group consisting of diethanolamine, dipropanolamine, monomethylethanolamine, dibutanolamine, 2- (ethylamino) ethanol and (ethoxymethylamino) Wherein the resist stripping liquid composition is one or more selected from the group consisting of a resist composition and a resist composition. The method according to claim 1,
(B) the amide compound represented by the general formula (2) is one or more selected from the group consisting of formamide, N-methylformamide and N, N-dimethylformamide. The method according to claim 1,
(C) The amide compound represented by the above-mentioned general formula (3) can be obtained by reacting N, N-bis (2-hydroxyethyl) formamide, N, N- Ethyl) -N-methylformamide. The resist stripper composition according to claim 1, The method according to claim 1,
(E) the corrosion inhibitor is selected from the group consisting of benzotriazole, tolytriazole, methyltolytriazole, 2,2 '- [[[benzotriazole] methyl] imino] bisethanol, 2,2' - [[[ Methyl] imino] bis-methanol, 2,2 '- [[[ethyl-1-hydrogen benzotriazol- , 2,2 '- [[[methyl-1-hydrogen-benzotriazol-1-yl] methyl] imino] Methyl] imino] biscylamine, 2,2 '- [[[methyl-1-hydrogen- 1-yl] methyl] imino] bisethanol, 1,2-benzoquinone, 1,4-benzoquinone, 1,4-naphthoquinone, and anthraquinone Wherein the resist stripping liquid composition is one or more selected from the group consisting of a resist composition and a resist composition. Depositing a conductive metal film on the flat panel display substrate,
Forming a resist film on the conductive metal film;
Selectively exposing the resist film;
Developing the exposed resist film to form a resist pattern;
Etching the conductive metal film using the resist pattern as a mask; And
And removing the resist, which has been modified and cured by the resist pattern formation and etching after the etching process, using the resist stripping liquid composition according to any one of claims 1 to 5.