KR101709992B1 - Light Emitting device - Google Patents

Abstract

A light emitting device according to an embodiment of the present invention includes: a support member of a conductive material; a second light emitting structure disposed on the support member and including a first semiconductor layer, an active layer, and a second semiconductor layer stacked in order, A first electrode layer formed between the first semiconductor layer of the first light emitting structure and the first passivation disposed on one side of the first light emitting structure; A second passivation disposed between the support member and the first semiconductor layer of the second light emitting structure and at least one region protruding outward of the first semiconductor layer; A third electrode layer formed on the first semiconductor layer and the second semiconductor layer and electrically connected to the second electrode layer; and a second electrode layer formed between the first and second light emitting structures and the support member, and between the first electrode layer and the second electrode layer, Included And a fourth electrode layer disposed in the through hole and contacting the second semiconductor layer and the supporting member of the second light emitting structure, wherein an insulator is disposed between the lower portion of the first semiconductor layer and the second electrode layer in the second region , At least one region of the insulator protrudes to the outside of the first semiconductor layer to cover at least one region of the second electrode layer.

Description

[0001] Light Emitting Device [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and more particularly to a light emitting device having electrostatic withstand voltage (ESD) characteristics.

As a typical example of a light emitting device, a light emitting diode (LED) is a device for converting an electric signal into an infrared ray, a visible ray, or a light using the characteristics of a compound semiconductor, and is used for various devices such as household appliances, remote controllers, Automation equipment, and the like, and the use area of LEDs is gradually widening.

In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

As the use area of the LED is widened as described above, it is important to increase the luminance of the LED as the brightness required for a lamp used in daily life and a lamp for a structural signal is increased.

In order to apply a light emitting device to a lighting device or the like, resistance to electrostatic discharge (ESD) of a certain level or more is required. To this end, the light emitting device may include a second region where a member such as a zener diode is mounted have.

On the other hand, when the first region and the second region are formed by etching the light emitting element, particles generated from the reflective layer and the electrode layer during the etching process can be diffused and adsorbed to the active layer and the electrode layer. This may lead to a poor short-circuiting property, which may lead to a reduction in the yield and reliability of the light-emitting device.

An object of the embodiment is to provide a semiconductor device in which an insulator is mounted between a semiconductor layer and an electrode layer in a zener region and the insulator covers one region of the electrode layer so that conductive particles generated during the etching process of the light emitting element are diffused and adsorbed to the electrode layer, Emitting device, which is improved in yield and improved in reliability.

A light emitting device according to an embodiment includes a support member made of a conductive material, a first semiconductor layer, an active layer, and a second semiconductor layer stacked on the support member in this order, A first electrode layer formed between the first semiconductor layer of the first light emitting structure and a first passivation disposed on one side of the first light emitting structure; A second passivation layer disposed between the support member and the first semiconductor layer of the second light emitting structure and having at least one region protruding outward of the first semiconductor layer; A third electrode layer formed on the second semiconductor layer and electrically connected to the second electrode layer, and a second electrode layer formed between the first and second light emitting structures and the support member, and between the first electrode layer and the second electrode layer, A temple And a fourth electrode layer disposed in the through hole and contacting the second semiconductor layer and the supporting member of the second light emitting structure, and an insulator is disposed between the lower portion of the first semiconductor layer and the second electrode layer in the second region , At least one region of the insulator protrudes to the outside of the first semiconductor layer to cover at least one region of the second electrode layer.

In the light emitting device according to the embodiment, an insulator is mounted between the first semiconductor layer and the electrode layer included in the second light emitting structure of the second region, thereby forming an active layer between the second semiconductor layer and the electrode layer The short-circuiting defectiveness of the light-emitting element can be prevented, and therefore the yield of the light-emitting element can be improved and the reliability can be improved.

1 is a cross-sectional view of a light emitting device according to a first embodiment.
FIGS. 2 to 7 are process flow diagrams illustrating a method of manufacturing a light emitting device according to an embodiment.

Before the description of the embodiments, the terms "on "," on ", " on "quot;, " on ", "under ", " directly ", or " indirectly" In addition, the criteria for above or below each layer will be described with reference to the drawings.

In the drawings, the thickness and size of each layer are exaggerated, omitted, or schematically illustrated for convenience and clarity. Therefore, the size of each component does not entirely reflect the actual size.

Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

(One)

1 is a cross-sectional view showing a cross section of a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device 100 may include a light emitting structure 160 on a support member 110 and a support member 110.

The support member 110 may be formed using a material having excellent thermal conductivity, or may be formed of a conductive material, and may be formed using a metal material or a conductive ceramic. The support member 110 may be formed of a single layer, and may be formed of a double structure or a multiple structure.

In an embodiment, the support member 110 is described as having conductivity, but may not be conductive, but is not limited thereto.

That is, the support member 110 is a base supporting substrate made of at least one material selected from the group consisting of copper (Cu), gold (Au), nickel (Ni), molybdenum (Mo), copper-tungsten , it may be implemented as Ge, GaAs, ZnO, SiC, SiGe, GaN, Ga ₂ O _3, etc.), and the like. Further, the conductive supporting member 110 may not be formed, or may be embodied as a conductive sheet.

The support member 110 facilitates the emission of heat generated in the light emitting device 100, thereby improving the thermal stability of the light emitting device 100.

An adhesive layer 111 may be laminated on the support member 110. The adhesive layer 111 may be formed by electromigration in which the atoms of the first and second electrode layers 130a and 130b are moved by the electric field during the application of a current It is formed to minimize. Further, the adhesive layer 111 can be formed using a metal material having excellent adhesion to the lower material.

The adhesive layer 111 includes a barrier metal or a bonding metal and is formed of a metal such as Ti, Au, Sn, Ni, Cr, Ga, And may include at least one of indium (In), bismuth (Bi), copper (Cu), silver (Ag), and tantalum (Ta). The adhesive layer 111 may be formed by bonding different adhesive layers (not shown), but the present invention is not limited thereto.

On the other hand, the adhesive layer 111 may further include a diffusion preventing layer (not shown). Therefore, the adhesive layer 111 and the diffusion barrier layer (not shown) may be formed as a single layer. Alternatively, a diffusion preventing layer (not shown) may be formed on or under the adhesive layer 111 and separated from each other. However, the present invention is not limited thereto, and the order of lamination is not particularly limited. On the other hand, at least one of the adhesive layer 111 and the diffusion preventing layer (not shown) may be formed on the supporting member 110, but the present invention is not limited thereto.

The first semiconductor layer 162, the active layer 166 and the second semiconductor layer 164 are sequentially stacked on the adhesive layer 111 and the first light emitting structure 160a and the second region The light emitting structure 160 including the second light emitting structure 160b of the second light emitting structure B may be formed. Meanwhile, the first region A may be a light emitting region, and the second region B may be a zener region.

1, one region of the adhesive layer 111 is in contact with the reflective layer 130a of the first region A and the other region is in contact with the insulating layer 120. However, the present invention is not limited thereto.

Here, the light emitting structure 160 is described as having a configuration in which the active layer 166 is interposed between the first semiconductor layer 162, the second semiconductor layer 164, and the first and second semiconductor layers 162 and 164 .

The first semiconductor layer 162 is formed of a p-type semiconductor layer, and holes can be injected into the active layer 152. For example, the first semiconductor layer 162 may be a semiconductor material having a composition formula of In _x Al _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN and the like, and p-type dopants such as Mg, Zn, Ca, Sr and Ba can be doped.

The active layer 166 may be formed on the first semiconductor layer 162.

The active layer 166 is a region where electrons and holes are recombined. As the electrons and the holes are recombined, the active layer 166 transitions to a low energy level and can generate light having a wavelength corresponding thereto.

Well active layer 166 has a composition formula in this case formed of a quantum well structure, for _{example, In x Al y Ga 1 -x-} y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) Layer and a barrier layer having a composition formula of In _a Al _b Ga _{1 -a- b} N (0? A? ₁ , 0? B? ₁ , 0? A + b? 1) have. The well layer may be formed of a material having a band gap lower than the band gap of the barrier layer.

A conductive clad layer may be formed on and / or below the active layer 166. The conductive clad layer may be formed of an AlGaN-based semiconductor and may have a band gap higher than that of the active layer 166.

A second semiconductor layer 164 may be formed on the active layer 166.

The second semiconductor layer 164 may be implemented as an n-type semiconductor layer.

The second semiconductor layer 164 is formed of a semiconductor material having a composition formula of In _x Al _y Ga _(1-xy) N (0? X? 1, 0? _Y? 1, 0? _X + For example, InAlGaN, GaN, AlGaN, InGaN, AlN, InN, AlInN and the like, and n-type dopants such as Si, Ge, and Sn can be doped.

Here, the insulating layer 120, the first and second reflective films 130a and 130b, and the first and second reflective films 130a and 130b are formed between the supporting member 110 and the first semiconductor layer 162 of the first light emitting structure 160a, 1 and the second electrode layers 140 and 150 may be formed.

The first and second reflective films 130a and 130b may be formed in a manner such that when a part of the light generated in the active layer 166 of the first and second light emitting structures 160a and 160b is directed toward the support member 110, The light extraction efficiency of the light emitting device 100 can be improved.

Accordingly, the first and second reflective films 130a and 130b may be formed of a material selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, (Mg), zinc (Zn), platinum (Pt), gold (Au), hafnium (Hf), and alloys of two or more thereof.

1, the first and second reflective films 130a and 103b may be formed under the first and second light emitting structures 160a and 160b, or may be formed under the first and second light emitting structures 160a and 160b, But may be formed only on the lower portion of the structure 160a, but is not limited thereto.

The first electrode layer 140 may be formed of, for example, ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IAZO (indium aluminum zinc oxide), IGZO gallium tin oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au and Ni / IrOx / , Ni, Au, Rh, and Pd. The reflective layer may include at least one layer selected from the group consisting of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf and a material composed of two or more of these alloys.

The first reflective layer 130a and the first electrode layer 140 may be formed to have the same width and the first reflective layer 130a and the first electrode layer 140 may be formed through a simultaneous firing process Therefore, the bonding force can be excellent.

As shown in FIG. 1, the first reflective layer 130a and the first electrode layer 140 are described as having the same width and length. However, at least one of the width and the length may be different, but is not limited thereto.

The second electrode layer 150 may be formed on the lower portion of the first semiconductor layer 162 of the second light emitting structure 160b so as to be spaced apart from the first electrode layer 140. [

The second electrode layer 150 is made of the same material as the first electrode layer 140 and can provide electrons to the first semiconductor layer 162 in the same manner as the first electrode layer 140.

The second reflective layer 130b and the second electrode layer 150 may have the same width as the first reflective layer 130a and the first electrode layer 140. Alternatively, The first electrode layer 130b may capture the second electrode layer 150, but the present invention is not limited thereto. Also, the second reflective layer 130b and the second electrode layer 150 may be formed through a co-firing process, so that the bonding force may be excellent.

An insulating layer 120 may be formed between the outer peripheral side surface of at least one of the first reflective layer 130a and the first electrode layer 140 and between the second reflective layer 130b and the adhesive layer 111. [

Here, the insulating layer 120 may include at least one of a metal material and an insulating material. In the case of the metal material, a material having a lower electrical conductivity than the material constituting the first and second electrode layers 140 and 150 may be used So that the power applied to the first and second electrode layers 140 and 150 is not applied to the light emitting structure 160.

The insulating layer 120 includes at least one of titanium (Ti), nickel (Ni), platinum (Pt), lead (Pb), rhodium (Rh), iridium (Ir), and tungsten (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), and titanium oxide (TiOx), or may include at least one of indium tin oxide (ITO) (AZO), aluminum zinc oxide (IZO), and indium zinc oxide (IZO).

The first passivation 170 and the second passivation 172 may be formed on the side surfaces of the first and second light emitting structures 160a and 160b and may be formed on the side surfaces of the first passivation 170 and the side walls of the first light emitting structure 160a. A third electrode layer 180 may be formed on the second semiconductor layer 164 and a fourth electrode layer 190 may be formed on the side surfaces of the second passivation layer 192 and the second semiconductor layer 164 of the second light emitting structure 160b. Can be formed.

The third electrode layer 180 may be formed of nickel (Ni) or the like and may be formed on the entire surface of the second semiconductor layer 164, A concavo-convex pattern for improving the efficiency can be formed, but the present invention is not limited thereto.

In the embodiment, it is assumed that the concavo-convex pattern is not formed on the second semiconductor layer 164.

In the second region B, a through hole (not shown) is formed in the insulating layer 120 and the second semiconductor layer 164 of the second light emitting structure 160b and the adhesive layer (not shown) And a fourth electrode layer 190 connecting the first electrode layer 111 and the second electrode layer 110 may be formed.

Here, the first passivation 170 can prevent shorting between the first and second semiconductor layers 162 and 164 and the active layer 166 of the first light emitting structure 160a by the third electrode layer 180 have. On the other hand, the second passivation 172 can prevent a short between the first and second semiconductor layers 162 and 164 and the active layer 166 of the second light emitting structure 160b by the fourth electrode layer 190 have.

Meanwhile, the passivation layers 174 and 176 may be formed on the other side of the first and second light emitting structures 160a and 160b in which the first and second passivation layers 170 and 172 are not formed. .

An insulator 199 may be formed between the first semiconductor layer 162 and the second electrode layer 150 of the second region B and the insulator 199 may be formed on the first semiconductor layer 162, Region may extend outside the zener region B and may cover the second electrode layer 150. [

The insulator 199 may include at least one of a low-electrical-conductivity metal material and an insulating material such as an insulating layer 120 and may be formed of at least one of titanium (Ti), nickel (Ni), platinum (Pt) (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), and titanium oxide (TiO ₂ ), or at least one selected from the group consisting of rhodium (Rh), iridium (Ir), and tungsten TiOx), or may include at least one of indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide (IZO) .

The insulator 199 overlaps the etched surface and covers the second electrode layer 150 when the first region A and the second region B are formed by etching the light emitting element 100 to form the second electrode layer 150 Is exposed to the etched surface to prevent the conductive particles generated from the first and second semiconductor layers 162 and 164 and the active layer 166 from being adsorbed to the second electrode layer 150.

An insulating layer 199 having a low electrical conductivity is formed between the first semiconductor layer 162 and the second electrode layer 150 of the zener region B and one region of the insulating layer 199 is located outside the zener region B The second electrode layer 150 is exposed to the etched surface to cover the first and second semiconductor layers 162 and 164 and the second electrode layer 150, And conductive particles generated from the active layer 166 are adsorbed on the second electrode layer 150 and the short-circuiting defect caused by the particles can be prevented. Thus, the yield and reliability of the light-emitting device 100 can be prevented from lowering.

(2)

FIGS. 2 to 7 are process flow diagrams illustrating a method of manufacturing a light emitting device according to an embodiment.

Referring to FIG. 2, the light emitting device 100 may grow the light emitting structure 160 on the growth supporting member 101.

The growth supporting member 101 may be selected from the group consisting of a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP and GaAs. A buffer layer (not shown) may be formed between the light emitting structure 160 and the light emitting structure 160.

The buffer layer may be formed of a combination of Group 3 and Group 5 elements, or may be formed of any one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN, and may be doped with a dopant.

An undoped semiconductor layer (not shown) may be formed on the growth supporting member 101 or the buffer layer (not shown), and a buffer layer (not shown) and an undoped semiconductor layer (not shown) Or may not be formed, and the structure is not limited thereto.

The light emitting structure 160 including the first semiconductor layer 162, the active layer 166 and the second semiconductor layer 164 may be disposed on the growth supporting member 101. The first semiconductor layer 162, The first semiconductor layer 166 and the second semiconductor layer 164 are the same as those described above with reference to FIG.

(3)

Referring to FIG. 3, the first and second electrode layers 140 and 150 and the insulator 199 may be formed on the light emitting structure 160 grown on the growth supporting member 101.

An insulator 199 may be formed on one region of the second region B on the first semiconductor layer 162. Since the insulator 199 is the same as that described above with reference to FIG.

The first and second electrode layers 140 and 150 may be formed on the first semiconductor layer 162 and the insulator 199. The first and second electrode layers 140 and 150 may be formed on the first semiconductor layer 162, And therefore it is omitted.

The first and second reflective films 130a and 130b may be formed on the first and second electrode layers 140 and 150. Since the first and second reflective films 130 are the same as those described in FIG. .

Here, the first and second reflective films 130a and 130b may be formed to have flat back surfaces that are not in contact with the first and second electrode layers 140 and 150, and may have irregularities (not shown) Do not limit.

On the other hand, when the concavities and convexities are formed on the back surfaces of the first and second reflective films 130a and 130b, the light extracting effect generated in the light emitting structure 160 can be improved.

(4)

Referring to FIG. 4, an insulating layer 120 may be formed on the upper surfaces of the first and second reflective films 130a and 130b and the outer peripheral side surfaces of the first electrode layer 140. Referring to FIG.

Here, the insulating layer 120 prevents the first semiconductor layer 162 of the light emitting structure 160 from being exposed to the outside, thereby preventing water penetrating from the outside and preventing corrosion of the light emitting structure 160 have.

(5)

Referring to FIG. 5, a fourth electrode layer (not shown) may be formed in the through hole 195 after the through hole 195 is formed in the insulating layer 120.

(6)

Referring to FIG. 6, the supporting member 110 may be bonded to the insulating layer 120 and the reflective layer 130 by an adhesive layer 111. The adhesive layer 111 may be diffused so that the support member 110 and the light emitting structure 160 are bonded to each other by contacting the insulating layer 120 and the reflective layer 130.

The diffusion preventing layer (not shown) may prevent diffusion of the power supplied to the first and second electrode layers 140 and 150 to the diffusion layer (not shown) So that the current can be concentrated on the first electrode 162.

When the supporting member 110 is formed, the supporting member 110 is positioned on the base, and then the growth supporting member 101 is removed. Here, the growth supporting member 101 can be removed by physical and / or chemical methods, and the physical method can be removed, for example, by a LLO (laser lift off) method.

On the other hand, although not shown, a buffer layer (not shown) disposed on the light emitting structure 160 after removing the growth supporting member 101 can be removed. At this time, the buffer layer (not shown) may be removed by a dry or wet etching method or a polishing process.

(7)

7, the light emitting structure 160 bonded to the support member 110 may include a first light emitting structure 160a of the first region A and a second light emitting structure 160b of the second region B The etching process can be performed so as to divide.

On the other hand, an insulating layer 199 having a low electrical conductivity is formed between the first semiconductor layer 162 and the second electrode layer 150 of the Zener region B, and one region extends outside the Zener region B, The conductive particles generated during the etching process of the light emitting device 100 are diffused and adsorbed on the upper surface of the two-electrode layer 150, and the short- It is possible to prevent defects, so that the yield and reliability of the light emitting device 100 can be prevented from lowering.

After the etching process, the first and second light emitting structures 160a and 160b are separated from each other and the first and second light emitting structures 160a and 160b are formed on the sides of the first and second light emitting structures 160a and 160b A passivation 170 may be formed.

On the other hand, the passivation layers 174 and 176 may be formed on the sides of the first and second light emitting structures 160a and 160b in which the first and second passivation layers 170 and 172 are not formed.

Although the first and second passivations 170 are described as being formed above the second semiconductor layer 164 of the first and second light emitting structures 160a and 160b in the embodiment, The present invention is not limited thereto.

Then, a third electrode layer 180 may be formed on the first passivation 170 of the first light emitting structure 160a.

The third electrode layer 180 is disposed on the second semiconductor layer 164 of the first light emitting structure 160a and the third electrode layer 180 is disposed on the first semiconductor layer 162 of the second light emitting structure 160b. The third electrode layer 150 formed on the first electrode layer 150 may be in contact with the third electrode layer 150.

At this time, an insulating member (not shown) may be formed on the exposed upper surface of the second electrode layer 150, but the present invention is not limited thereto.

In the meantime, although the vertical emissive element is mainly described in the embodiment, the present invention is not limited thereto, and the present invention can be applied to a horizontal emissive element.

In addition, at least one process in the process sequence shown in FIGS. 2 to 7 may be changed in order and is not limited thereto.

The light emitting device 100 according to the embodiment can be mounted in a package. A plurality of light emitting device packages each having the light emitting diode mounted thereon are arrayed on a support member, and a light guide plate, , A diffusion sheet, and the like may be disposed.

The light emitting device package, the supporting member, and the optical member can function as a light unit. Another embodiment may be implemented with a display device, an indicating device, a lighting system including the light emitting diode or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp, a streetlight.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of example, It will be understood that various modifications and applications are possible without departing from the scope of the present invention. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

100: light emitting element 110: support member
111: adhesive layer 120: insulating layer
130a, 130b: first and second reflective films 140: first electrode layer
150: second electrode layer 160: light emitting structure
162: first semiconductor layer 164: second semiconductor layer
166: active layer 170: first passivation
180: third electrode layer 190: fourth electrode layer
199: Insulator

Claims (10)

Conductive support members;
A light emitting structure formed by stacking a first semiconductor layer, an active layer, and a second semiconductor layer on the support member in order, the first light emitting structure of the first region and the second light emitting structure of the second region;
A first electrode layer formed between the supporting member and the first semiconductor layer of the first light emitting structure;
A first passivation disposed on one side of the first light emitting structure;
A second passivation disposed on one side of the second light emitting structure;
A second electrode layer disposed between the support member and the first semiconductor layer of the second light emitting structure and having at least one region protruding outside the first semiconductor layer;
A third electrode layer formed on a side surface of the first passivation layer and a second semiconductor layer of the first light emitting structure and electrically connected to the second electrode layer;
An insulating layer formed between the first and second light emitting structures and the supporting member, and between the first electrode layer and the second electrode layer and including a through hole;
And a fourth electrode layer disposed in the through hole and contacting the second semiconductor layer and the supporting member of the second light emitting structure,
Wherein an insulator is disposed between a lower portion of the first semiconductor layer of the second region and the second electrode layer, and at least one region of the insulator protrudes outward of the first semiconductor layer to cover at least one region of the second electrode layer Emitting element. The method according to claim 1,
The insulator may be at least one selected from the group consisting of Ti, Ni, Pt, Pb, Rh, Ir, W, Al ₂ O ₃ , SiO ₂ , silicon nitride (Si ₃ N ₄ ), titanium oxide (TiO x), indium tin oxide (ITO), aluminum zinc oxide (AZO), and indium zinc oxide ). ≪ / RTI > The method according to claim 1,
And one end of the insulator contacts the second electrode layer. The method according to claim 1,
Wherein at least one of the first to fourth electrode layers comprises a first electrode layer,
(ITO), indium zinc oxide (IZO), indium zinc oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO) NiO, Au, Rh, Pd, and the like are used as the antimony oxide, ATO, GZO, IrOx, RuOx, RuOx / ITO, Ni / IrOx / Au, And at least one light emitting element. The method according to claim 1,
A reflective film formed between the supporting member and the first and second electrode layers; . The method of claim 1,
A passivation formed on the other side of the first and second light emitting structures; . The method according to claim 1,
And an adhesive layer formed between the support member and the light emitting structure,
Wherein the adhesive layer comprises at least one of indium (In), tin (Sn), silver (Ag), niobium (Nb), nickel (Ni), aluminum (Au), and copper (Cu). The method according to claim 1,
And a diffusion barrier layer formed between the support member and the light emitting structure,
The diffusion barrier layer may be formed of at least one selected from the group consisting of Pt, Pd, W, Ni, Ru, Mo, Ir, Rh, (Hf), zirconium (Zr), niobium (Nb), and vanadium (V). The method according to claim 1,
Wherein the first region is a light emitting region. The method according to claim 1,
And the second region is a zener region.

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