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KR101652350B1 - Apparatus for bonding and debonding substrate, and methods of manufacturing semiconductor device substrate using the same - Google Patents

Apparatus for bonding and debonding substrate, and methods of manufacturing semiconductor device substrate using the same Download PDF

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KR101652350B1
KR101652350B1 KR1020140121197A KR20140121197A KR101652350B1 KR 101652350 B1 KR101652350 B1 KR 101652350B1 KR 1020140121197 A KR1020140121197 A KR 1020140121197A KR 20140121197 A KR20140121197 A KR 20140121197A KR 101652350 B1 KR101652350 B1 KR 101652350B1
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substrate
semiconductor element
bending inhibiting
element substrate
bonding
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KR20160031637A (en
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이한승
이석우
조명환
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주식회사 글로벌식스
송재범
이한승
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Abstract

The present invention relates to a method of manufacturing a semiconductor element substrate, comprising: a first deflection suppressing substrate for fixing a semiconductor element substrate, the first deflection suppressing substrate comprising a removal solution used for removing a first sacrificial layer interposed between a semiconductor element substrate and a first deflection suppressing substrate Fixing the semiconductor element substrate to the first bending inhibiting board on which the passages are formed; Reversing the direction of the semiconductor element substrate by rotating the first bending inhibiting substrate; Bonding a second bending inhibiting substrate having a passage for the removing solution to the semiconductor element substrate via a second sacrificial layer on the opposite side of the first bending inhibiting substrate; And removing the first bending inhibiting substrate from the semiconductor element substrate by supplying the removing solution through the passage of the first bending inhibiting substrate to remove the first sacrificing layer. .

Figure 112014086695294-pat00018

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate bonding and debonding device, and a method of manufacturing a semiconductor device substrate using the same.

The present disclosure relates generally to a substrate bonding and debonding apparatus and a method of manufacturing a semiconductor element substrate using the same, and more particularly, to a substrate bonding and debonding apparatus for suppressing bowing of a semiconductor element substrate and a semiconductor element substrate And a method for producing the same.

Semiconductor devices include semiconductor devices such as semiconductor light emitting devices, light receiving devices, and DRAMs, and 3D stacking packages such as memory, logic, MEMS, and TSV (Through Si Via) For example, a group III nitride semiconductor light emitting device. The Group III nitride semiconductor is made of a compound of Al (x) Ga (y) In (1-x-y) N (0? X? 1, 0? Y? 1, 0? X + y? A GaAs-based semiconductor light-emitting element used for red light emission, and the like.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

FIG. 1 is a view showing an example of a conventional semiconductor light emitting device, which is an example of a group III nitride semiconductor light emitting device.

FIG. 2 is a diagram showing an example of a vertical type semiconductor light emitting device shown in U.S. Patent No. 5,008,718. The semiconductor light emitting device includes a semiconductor layer 300 having a first conductivity, an active layer A semiconductor layer 500 having a second conductivity different from that of the first conductivity, an electrode 800 formed on the side where the growth substrate is removed, and a semiconductor layer 300, 400, 500 while supplying current to the semiconductor layer 500 A support substrate S for supporting the substrate S, and an electrode 700 formed on the support substrate S. The electrode 800 is electrically connected to the outside using wire bonding.

The support substrate S may be formed by wafer bonding, plating and / or vapor deposition, and may be formed of a wafer made of a material such as Si, Ge, GaAs, ZnO, SiC, or the like, a metal or a metal alloy such as nickel, nickel, molybdenum, and copper-tungsten (Cu-W), and there is a special limitation in the method no.

FIG. 3 is a view showing an example of a conventional method for manufacturing a semiconductor light emitting device. In this conventional semiconductor light emitting device, if a growth substrate is removed, even if a supporting substrate S is present, A bowing occurs in the semiconductor light emitting device. Such deflection may cause problems such as a photoresist pattern process, a dry etching process, a passivation film deposition process, and an electrode pad deposition process, which are performed after removal of the growth substrate, thereby making the process automation difficult and reducing the yield.

A semiconductor device such as a semiconductor device such as a DRAM or a 3D stacking package (e.g., memory, logic, MEMS, TSV (Through Si Via), etc.). The wafer may be rotated by a process of grinding the wafer or by heat, and the finned wafer is difficult to perform in the subsequent process, and the yield is lowered.

FIG. 4 is a view for explaining an example of a conventional method of manufacturing a semiconductor element substrate, in which a polymer adhesive body 1003 is applied to a silicon wafer 1001 on which a semiconductor element such as a DRAM is formed and a separation layer 1007 To fix the glass substrate 1005 to the polymer adhesive body 1003. Then, the back surface of the wafer 1001 is grinded to thin the wafer, and then a member such as a blue tape 1008 is attached to the back surface of the wafer. The separation layer 1007 may be irradiated with a laser through the glass substrate 1005 to separate the glass substrate 1005 by a laser lift-off method. However, even if the glass substrate 1005 is detached, the polymer adhesive agent 1003 is attached to the wafer 1001, and the separation adhesive layer 1009 is attached to the polymer adhesive agent 1003 again to peel off the polymer adhesive agent 1003. Alternatively, the glass substrate 1005 is removed by a mechanical force instead of the laser lift-off by different materials of the separation layer 1007, the polymer adhesive 1003 is removed by the separation adhesive layer 1009, Device. Such a process is complicated, the laser lift-off is expensive, and the polymer adhesive 1003 is detached from the semiconductor device, causing the wafer 1001 to warp.

FIG. 5 is a view showing an example of a semiconductor element substrate on which a conventional TSV process is performed. In order to form a 3D package using TSV (Through Si Via), a via hole is formed through the Si substrate, It is filled with plating method. In order to perform plating, a conductive seed must be formed inside the via hole. In this case, since a deposition method which can penetrate deeply into the via hole must be used, a sputtering method which is a deposition method using plasma is used. However, even if the sputtering method is used, there is a limit to a deep via hole of several tens of um or more. After the formation of the seed, the via hole can be filled by forming the metal thick on the seed by the electrolytic plating method. The opposite side of the plated via hole is ground to form a conductive material penetrating the Si substrate. In such a process, since the depth of the via hole is limited to several tens of μm, temporary bonding and debonding techniques are required to grind the substrate and attach it to other places. As the substrate is thinned, bowing occurs So that an additional process becomes difficult.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a substrate bonding and debonding apparatus for bonding and debonding a semiconductor element substrate, comprising: a first deflection inhibiting substrate for fixing a semiconductor element substrate; A first bending inhibiting substrate having a passage for a removing solution used in removing the first sacrificial layer interposed between the semiconductor element substrate and the first bending inhibiting substrate; And a second bending inhibiting substrate provided on a side opposite to the first bending inhibiting substrate with respect to the semiconductor element substrate and having a passage for the removing solution formed thereon.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor device substrate, comprising the steps of: providing a first deflection suppressing substrate for fixing a semiconductor device substrate, Fixing the semiconductor element substrate to a first bending inhibiting substrate having a passage for a removing solution used in removing the first sacrificial layer interposed between the bending inhibiting substrates; Reversing the direction of the semiconductor element substrate by rotating the first bending inhibiting substrate; Bonding a second bending inhibiting substrate having a passage for the removing solution to the semiconductor element substrate via a second sacrificial layer on the opposite side of the first bending inhibiting substrate; And removing the first bending inhibiting substrate from the semiconductor element substrate by supplying the removing solution through the passage of the first bending inhibiting substrate to remove the first sacrificing layer. / RTI >

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device,
2 is a view showing an example of a vertical type semiconductor light emitting device shown in U.S. Patent No. 5,008,718,
3 is a view showing an example of a conventional method of manufacturing a semiconductor light emitting device,
4 is a view for explaining an example of a conventional method of manufacturing a semiconductor element substrate,
5 is a view showing an example of a semiconductor element substrate on which a conventional TSV process is performed,
6, 7, and 8 are views illustrating an example of a method of manufacturing a semiconductor device according to the present disclosure,
9 is a view for explaining an example of a pattern of a bonding layer and a hole,
10 is a view for explaining another method of forming the bonding layer,
11 is a view for explaining an example of a method of manufacturing a supporting substrate for a semiconductor element according to the present disclosure,
12 is a view for explaining another example of a support substrate for a semiconductor element according to the present disclosure and a method for manufacturing a semiconductor element using the same,
13 is a view for explaining an example of a substrate bonding and debonding apparatus according to the present disclosure,
14 is a view for explaining an example of a method of fixing the first bending inhibiting board and the semiconductor element board to the fixing portion,
15 is a view for explaining an example of a transfer module included in a substrate bonding and debonding device,
16 is a view for explaining an example in which a bending inhibiting substrate and a semiconductor element substrate are fixed to a fixing portion,
17 is a view for explaining an example of a bonding layer forming section,
18 is a view for explaining an example of a method of reversing a semiconductor element substrate,
19 is a view for explaining an example of a rotation module installed around the bonding module,
20 is a diagram for explaining an example of a curing module,
21 is a view for explaining an example of a method of debonding a semiconductor element substrate and a bending inhibiting substrate,
22 to 24 are views for explaining another example of a method of manufacturing a semiconductor element substrate using the substrate bonding and debonding apparatus according to the present disclosure,
25 is a view for explaining another example of the debonding method,
FIGS. 26 and 27 are views for explaining another example of a method of manufacturing a semiconductor element substrate using the substrate bonding and debonding apparatus according to the present disclosure,
28 to 33 are views for explaining another example of a method of manufacturing a semiconductor element substrate using the substrate bonding and debonding apparatus according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawings.

6, 7, and 8 are views for explaining an example of a method of manufacturing a semiconductor device according to the present disclosure. First, as shown in FIG. 6A, holes or grooves are formed in the base substrate 33, The conductor 35 is formed in the hole, as shown in Figs. For example, after a seed is formed by sputtering, plating may proceed to form a conductor. The base substrate 33 may be made of, for example, Si, Ge, GaAs, Al, Mo, MoCu, W, WCu, Cu, Ni, There is no limit. In the case of the TSV process, the base substrate 33 may be made of silicon. Thereafter, a device layer 53 is formed by performing a front-end-of-line (FEOL) process for forming the device as shown in FIG. 6C.

Subsequently, the semiconductor laminated structure 43 is bonded to the element layer 53 as shown in Fig. 7A. Next, as shown in FIG. 7B, the supporting substrate for a semiconductor device (2, 3, 5) according to the present disclosure is bonded to the semiconductor element substrate 107, which is a combination of the base substrate 33, the element layer 53 and the semiconductor stacked structure 43 And the thickness reduction process is performed by, for example, grinding the back surface of the base substrate 33. [ For example, the sacrificial layer 2 is formed on the semiconductor laminated structure 43, and the flexural restraining layer 3 is fixed on the sacrificial layer 2. The bonding layer 5 is interposed between the sacrificial layer 2 and the bending inhibiting layer 3 for fixation. A passage (for example, 3a; a plurality of through holes) of the sacrificial layer 2 removing solution is formed in the bending inhibiting layer 3. The bonding layer 5 is formed in the sacrificial layer 2 avoiding the passage so that the removing solution is well provided. As described above, the semiconductor element substrate 107 is provided on the supporting substrate 2, 3, 5 composed of the sacrificial layer 2, the bonding layer 5, and the bending inhibiting layer 3.

The sacrificial layer 2 may be formed on the semiconductor element substrate 107. Alternatively, after forming the sacrificial layer 2 separately from the semiconductor element substrate 107, the sacrificial layer 2 may be formed by the bonding layer 5, An embodiment in which bonding between the sacrificial layer 2 and the semiconductor element substrate 107 is performed after the supporting substrate 2, 3, 5 is manufactured by fixing the substrate 3 to the sacrificial layer 2 is also included in the present disclosure. The bonding layer 5 may be formed not only on the sacrificial layer 2 but also on the bending inhibiting layer 3 and the sacrificial layer 2 and the bending inhibiting layer 3, 3) may be formed.

As a result of the thickness reduction process, the conductor 35 formed on the base substrate 33 penetrates the base substrate 33 vertically. Such a conductor 35 can be used as a power supply, a signal supply path, or a heat dissipation path. The support substrates 2, 3, and 5 prevent problems such as bending of the semiconductor element substrate 107 due to stress caused by heat or friction in the thickness reduction process. Thereafter, as shown in Fig. 8A, an etchant for removing the sacrificial layer 2 is supplied to the plurality of through holes 3a (passages) of the bending inhibiting layer 3, and as a result, (2, 3, 5) and the semiconductor element substrate 107 are separated to manufacture a semiconductor device.

According to the supporting substrate for a semiconductor device and the method of manufacturing a semiconductor device using the same according to the present embodiment, the warping of the semiconductor element substrate 107 is suppressed, and the yield of the semiconductor device is improved.

In addition, by forming the passage 3a for the removing solution (for example, etchant) used for removing the sacrificial layer 2 on the bending inhibiting layer 3, it is possible to use a low cost and simple wet etching as compared with the laser lift- There are advantages to be able to.

In this example, the support substrates 2, 3, 5 for semiconductor elements include a sacrificial layer 2, a bonding layer 5, and a deflection inhibiting layer 3. For example, the sacrificial layer 2 is integrated on the semiconductor element substrate 107 side, and the sacrificial layer 2 is removed by wet etching. Therefore, it is preferable that the etchant is selected such that the sacrificial layer 2 is etched while the semiconductor element substrate 107 is not etched.

The sacrificial layer 2 is made of a material selected from the group consisting of Ti, SiO 2 , CrN, Cu, Cr 2 O 3 , Al, AlN, ZnO, In and the like. Cr 2 O 3 is Cr-7, Al is KOH, phosphoric acid, nitric acid, AlN, and the like. In the etchant, Ti is BOE and HF, SiO 2 is BOE and HF, CrN is Cr-7, Cu is nitric acid or sulfuric acid, Can be wet etched with NaOH or KOH, HCl with ZnO, sulfuric acid, nitric acid, or In with HCl, sulfuric acid or nitric acid. A mixed solution of the above-mentioned solution is also included. Since a representative etchant of each substance is specified, a liquid surface for dissolving the substance can be used.

The thickness of the bending inhibiting layer 3 is not particularly limited as long as it can suppress the warping of the semiconductor element substrate 107, and may vary depending on the material. For example, the entire supporting substrate 2, 3, 5 has a thickness of about 200 mu m or more, so that the semiconductor device substrate 107 can be restrained against deflection. The bending inhibiting layer (3) is not particularly limited as long as it is a material that does not cause a problem in etching the sacrificial layer (2). For example, the bending inhibiting layer 3 may be made of a material selected from the group consisting of ceramic, sapphire, SUS, Al, Si, Cu-C (kappa graphite), Ge, GaAs, Mo, MoCu, W, WCu, Cu, Or as a laminate thereof. It is also conceivable to form the bending inhibiting layer 3 from a plastic or polymer material. The passage 3a is formed in the bending inhibiting layer 3 for the removal solution used for removing the sacrificial layer 2. For example, the passage 3a is formed in the bending inhibiting layer 3 (Not shown).

On the other hand, when the supporting substrate 2, 3, 5 is bonded to the semiconductor element substrate 107 and a subsequent process is performed, the supporting substrate 2, 3, 5 and the semiconductor element substrate 107 are heated It is subjected to thermal stress. At this time, if there is a large difference in thermal expansion between the semiconductor element substrate 107 and the support substrates 2, 3, 5, the semiconductor element substrate 107 and the support substrates 2, 3, have. In order to prevent this, it is necessary to select the materials of the support substrates (2, 3, 5), particularly the material of the bending inhibiting layer (3), to match with the semiconductor element substrate (107). That is, since the material of the semiconductor element substrate 107 is defined to a certain degree according to the characteristics of the semiconductor element, it is preferable to select the material of the deflection inhibiting layer 3 as a material having a small difference in thermal expansion coefficient from the semiconductor element substrate 107 .

Materials and thermal expansion coefficients that can be used as the bending inhibiting layer 3 are shown in Table 1 below.

Thermal expansion coefficient Thermal conductivity Electrical resistivity Mineral hardness Melting point Coefficient of thermal expansion Thermal conductivity resistance Hardness Melting point 10 -6 K -1 W m -1 K -1 10 -8 Ω m (no units) ° C Ni 13.4 91 7.2 4.0 1455 Cu 16.5 400 1.7 3.0 1085 Ag 18.9 430 1.6 2.5 962 Au 14.2 320 2.2 2.5 1064 Ti 8.6 22 40.0 6.0 1668 Cr 4.9 94 12.7 8.5 1907 W 4.5 174 5.4 7.5 3422 Pt 8.8 72 10.6 3.5 1768 Ge 6.0 60 Semi. 6.0 938 Sapphire 7.5 35 9.0 2030 GaN 5.6 130 Semi. 2573 Si 2.6 150 Semi. 6.5 1414 AlN 4.2 285 Semi. 2200 SiC 4.5 283 Semi. 2793 Al 23.1 237 2.7 2.8 660 CuW 170 CuMo 6.7 170 ZnO 6.5 130 Semi. 1975 Au80Sn20 16.0 57 280 Mo 4.8 139 5.5 5.5 2896 Ta 6.3 57 13.5 6.5 3290 In 32.0 82 8.0 1.2 157

Referring to Table 1, the coefficient of thermal expansion of sapphire is 7.5, and the combination of ceramic / Mo or ceramic / sapphire has a small difference in thermal expansion coefficient, which is an appropriate combination example. It may be preferable to select the bending inhibiting layer 3 from the same material as the semiconductor laminated structure 43 in terms of prevention of falling due to thermal stress. Therefore, a Mo / Mo combination is good, and a ceramic / sapphire combination is also good. Here, when a material such as Al 2 O 3 is in a single crystal state, it is called a sapphire, and an amorphous state is called a ceramic. Both have the same thermal expansion coefficient of about 7.5. On the other hand, the combination of ceramic / Cu and ceramic / Ni shows a large difference in thermal expansion coefficient. For example, Cr, W, AlN, SiC, and Mo may be used as the bending inhibiting layer 3 because silicon has a small thermal expansion coefficient.

The bonding layer 5 attaches the semiconductor element substrate 107 and the sacrificial layer 2 and then is removed together or separated from the semiconductor element substrate 107 as the sacrificial layer 2 is removed using the removing solution. As a result, the bending inhibiting layer 3 is separated from the semiconductor element substrate 107. The bonding layer 5 is not particularly limited as long as it is a material capable of bonding or fixing the semiconductor element substrate 107 and the sacrificial layer 2. For example, the bonding layer 5 may be made of Ag paste or AgSnCu paste. Alternatively, the bonding layer 5 may be made of a metal alloy such as AuSn, AgSn, NiSn, CuSn, AgSnCu, AuIn, AuGe, AuSi, AlGe, , Sn, and the like. It is also possible to bond the sacrificial layer 2 and the bending inhibiting layer 3 to each other using a double-faced tape made of a synthetic resin, an adhesive, or an adhesive (for example, polyimide or Temploc) as the bonding layer 5. As a polymer adhesive material, for example, MUC (Mega Uncombustible Coat) which is a film-type fire retardant coating material of Eco Infra Holdings Co., Ltd., and ceramic high paint such as a ceramic high coat of ECOWARE Co., Ratio Subject 14: As a material for the hardening agent 4, a graphene heat-insulating adhesive material, for example, MTCA (Mega Thermal Conductive Adhesive) manufactured by Eco Infrastructure Holdings Co., Ltd. may be used as the material of the bonding layer 5. In addition, the bonding layer 5 may be made of a material such as Epoxies (EPO), Polyimides (PI or PSPI), Benzocyclobutene (BCB), Polybenzoxazole (PBO), Silicones (Siloxanes) These materials are customarily used for their intended use.

The bonding layer 5 is formed on at least one of the sacrificial layer 2 and the bending inhibiting layer 3. In this example, the bonding layer 5 comprises a top bonding layer 5a patterned on the sacrificial layer 2 and a bottom bonding layer 5b bonded to the top bonding layer 5a by being patterned on the bending inhibiting layer 3. [ ).

As described above, in the manufacturing method of the supporting substrate 2, 3, 5, the sacrificial layer 2 and the bonding layer 5 are formed on the semiconductor element substrate 107, ). ≪ / RTI > The bending inhibiting layer 3 formed with the plurality of holes 3a is bonded to the sacrificial layer 2 by the bonding layer 5 before the support substrates 2, 3, and 5 are attached to the semiconductor element substrate 107. [ The support substrates 2, 3, and 5 can be manufactured. Alternatively, a method of forming a plurality of holes 3a in the bending inhibiting layer 3 after the bending inhibiting layer 3 is bonded to the sacrificial layer 2 by the bonding layer 5 is of course possible.

However, since the step of forming the plurality of holes 3a may adversely affect the bonding layer 5, the sacrificial layer 2, and the semiconductor element substrate 107, the bending inhibiting layer 3 may have a plurality of holes 3a may be combined with the semiconductor element substrate 107 in a pre-formed state. On the other hand, it is also possible to form the plurality of holes 3a through the bonding layer 5 after the bonding layer 5 is entirely coated on the sacrificial layer 2 and the bending inhibiting layer 3 is bonded, . ≪ / RTI >

9A and 9B illustrate examples of patterns of the bonding layer 5 and the holes 3a. A plurality of holes 3a are formed in the bending inhibiting layer 3 as shown in Fig. 9A The bonding layer 5 is sandwiched between the sacrificial layer 2 and the bending inhibiting layer 3 to avoid the plurality of holes 3a to fix the bending inhibiting layer 3 to the sacrificial layer 2. [ The bonding layer 5 is formed to have a pattern (e.g., 5a, 5b) on at least one of the bending inhibiting layer 3 and the sacrificial layer 2 as shown in Fig. 9 (b) -beam deposition, plating, thermal deposition, or the like may be used. For example, patterns 5a and 5b of the bonding layer 5 may be formed by a screen printing method in which an Ag paste is applied onto a patterned mask (e.g., silk, tape, metal, etc.). Alternatively, the bonding layer 5 may be formed, a photoresist pattern may be formed thereon, and the bonding layer 5 may be etched using the photoresist pattern as a mask to form the patterns 5a and 5b of the bonding layer 5 . In the case of silk screen printing, a cleaning process may be added to reuse the bending inhibiting layer 3. On the other hand, a printing method using a tape can be performed by, for example, forming a hole in a hole-formed blue tape or a blue tape and attaching a blue tape to the sacrificial layer 2 or the deflection- And the blue tape is removed from the bending inhibiting layer 3 after the CLO process in which the bending inhibiting layer 3 is separated from the semiconductor element substrate 107 by wet etching, This is a simple, blue tape is inexpensive because it is an advantage and can be helpful in developing substrate bonding and debonding equipment. 10 is a view for explaining another method of forming the bonding layer 5. As an engineering product of Musashi Co., Ltd., bonding is performed by dispensing the raw material of the bonding layer 5 with a dispenser in which the piston is dispensed 333 times per second Layer 5 can be formed.

The upper bonding layer 5a formed on the sacrificial layer 2 and the lower bonding layer 5b formed on the bending inhibiting layer 3 are aligned and the sacrificial layer 2 and the bending inhibiting layer 3 are aligned Are fixed to each other by the upper bonding layer 5a and the lower bonding layer 5b. At this time, as shown in Fig. 9 (c), a plurality of bonding layer 5 patterns 5a and 5b are provided around each hole 3a formed in the bending inhibiting layer 3, for example, Six bonding layer 5 patterns 5a and 5b are formed around each hole 3a as shown in Fig. 9 (d).

As a method of fixing the sacrificial layer 2 and the bending inhibiting layer 3 to each other by the bonding layer 5, for example, the sacrificial layer 2 (e.g., Ti) integrated with the semiconductor element substrate 107 and the bending AuSn is formed to a thickness of about 1.5 mu m by e-beam deposition, plating, thermal deposition or the like as a bonding layer 5 in each of the suppression layers (e.g., ceramics) The bending inhibiting layer 3 is bonded to the sacrificial layer 2 by the bonding layer 5 or the eutectic bonding by applying a pressure of 20 kg / cm 2 or more for 10 minutes or more. The composition of the materials constituting the bonding layer 5 and the eutectic temperature are shown in Table 2 below. Au may be formed on one side of the sacrificial layer 2 and the antifriction layer 3, and Sn may be formed on the other side. As a result, the supporting substrates 2, 3 and 5 including the sacrificial layer 2, the bonding layer 5 and the bending inhibiting layer 3 are produced.

Eutectic alloy Eutectic composition Eutectic temperature Au-In 0.6 / 99.4 wt-% 156 ℃ Cu-Sn 5/95 wt-% 231 ° C Au-Sn 80/20 wt-% 280 ℃ Au-Ge 28/72 wt-% 361 ° C Au-Si 97.15 / 2.85 wt-% 370 ° C Al-Ge 49/51 wt-% 419 DEG C Al-Si 87.5 / 12.5 wt-% 580 ° C

In addition, the bonding layer (5) may be made of a material such as Epoxies (EPO), Polyimides (PI or PSPI), Benzocyclobutene (BCB), Polybenzoxazole (PBO), Silicones (Siloxanes)

11 is a view for explaining an example of a manufacturing method of the support substrates 2, 3 and 5 according to the present disclosure, in the case where the bending inhibiting layer 3 of the support substrates 2, 3 and 5 is formed of ceramics First, as shown in Fig. 11A, a soft ceramic sheet 155 is formed. The kind of the ceramic is not particularly limited, and examples thereof include alumina (Al 2 O 3 ), aluminum nitride (AlN), silicon carbide (SiC) and silicon nitride (SiN). A solvent, an organic binder, a dispersant, and the like are mixed with such a ceramic powder to prepare a slurry, and a soft ceramic sheet 155 is prepared by using this slurry.

Thereafter, as shown in Fig. 11B, a plurality of holes 3a are formed in the soft ceramic sheet 155 by a hole forming process. Here, the soft ceramic sheet 155 is in a soft state so that the shape of the ceramic sheet 155 is relatively free from deformation and is suitable for forming the holes 3a and grooves. As the hole forming step, methods such as punching 51, drilling, spot pacing, laser machining and the like can be used. In this example, a plurality of holes 3a are formed in the ceramic sheet 155 by a low-cost and easy punching process. The plane shape of the hole 3a is not particularly limited, and may be a circular, oval, or polygonal shape such as a triangle, a square, or a hexagon. The width or the maximum dimension in the radial direction of the hole 3a is not particularly limited, and the etching speed of the sacrificial layer 2 can be improved by increasing the density of the holes 3a. It is also possible to form the end face of the hole 3a, that is, the face of the ceramic sheet 155 due to the hole 3a to be an inclined face. Alternatively, when the soft ceramic sheet 155 is formed of a ceramic slurry, the hole 3a may be formed using a certain frame.

Thereafter, as shown in Fig. 11C, the flexible ceramic sheet 155 on which the holes 3a are formed is degreased, and then the bending inhibiting layer 3 is formed by firing at a predetermined temperature. For example, a ceramic sheet 155 having a plurality of holes 3a is placed in an oven or the like and baked. As a result, as shown in Fig. 11D, a binder material or a solvent for fixing ceramics such as alumina is blown by the firing process, and a rigid bending inhibiting layer 3 slightly smaller than the ceramic sheet 155 is formed. The firing temperature of a typical ceramic sheet 155 is usually about 1400 ° C to 1500 ° C. In this example, the thickness of the deflection inhibiting layer 3 can be selected as required. For example, a flexible ceramic sheet 155 (e.g., a green sheet) may be baked and then subjected to a polishing process to form a deflecting layer 3 having a desired thickness. Alternatively, the green sheet may be formed to have a desired thickness from the beginning and then fired to produce the deflection-restraining layer 3, which is advantageous in that the polishing process can be omitted. For example, in order to form a flexible ceramic sheet 155, the thickness of filling aluminum powder can be adjusted. When the aluminum powder is thinned, it can be formed to have a thickness of about 50 μm to about 500 μm. In this example, the hole 3a is punched easily and inexpensively from the beginning on the soft green sheet. Since the green sheet before firing is soft or soft, it is easy to process the hole 3a into a desired shape by punching or the like. The cost is much reduced if it is formed by woodcarving (for example, punch) rather than using a laser to form the hole 3a. As described above, the method of forming the bonding layer and the sacrificial layer on the antiferromagnetic layer formed of ceramic is as described above.

On the other hand, it is important to increase the speed of the CLO process for separating the semiconductor element substrate 107 and the bending inhibiting layer 3 from each other in order to improve process efficiency. Therefore, it is preferable that the sacrificial layer 2 is rapidly etched by the etchant, and it is better if the sacrificial layer 2 is formed to have a porous structure. E-beam deposition or sputtering can be used in the sacrificial layer 2 formation method. It can be seen that the sacrificial layer 2 formed by e-beam deposition is faster than the etching rate of the sacrificial layer 2 by sputtering there was. When the bonding layer 5 is formed of a polymer, the interface characteristics of the polymer and the sacrifice layer 2 can be adjusted favorably by etching the sacrificial layer 2 (e.g., to cause a porous gap) by appropriately adjusting the curing time and temperature, . Further, when forming the pattern of the bonding layer 5, as long as there is no problem with the adhesive ability, the area of the pattern of the bonding layer 5 is reduced to increase the contact surface between the etchant and the sacrifice layer 2, The CLO speed can be increased by increasing the density of the hole as much as possible.

12A and 12B are diagrams for explaining another example of a method for manufacturing a semiconductor device using the supporting substrate for a semiconductor device according to the present invention. In this case, a DRAM, an ASIC, a transistor, a CMOS The sacrificial layer 2 is formed on the semiconductor element substrate 110 on which the semiconductor element 108 such as ROM, EP-ROM is formed. The sacrificial layer 2 and the etchant can be selected in various manners as described above, wherein the sacrificial layer 2 is selected so that the etchant has a good etch selectivity ratio and the etchant does not damage the semiconductor element 108 do. For example, if semiconductor element 108 is made of SiO 2 When the sacrificial layer 2 is formed of Cu, Al or the like and etchant such as KOH, phosphoric acid or nitric acid is used for Cu as the nitric acid or sulfuric acid and Al as the material for the semiconductor element 108 The sacrificial layer 2 can be removed without damaging the sacrificial layer 2.

Subsequently, the bending preventive layer 3 is bonded or fixed to the sacrificial layer 2. The bonding layer 5 is formed by patterning to avoid holes in at least one of the sacrificial layer 2 and the bending inhibiting layer 3 as described above. Next, as shown in FIG. 12B, the base substrate 109 is thinned by grinding the opposite side of the surface on which the semiconductor element 108 is formed, for example, the back surface of the base substrate 109 (e.g., silicon wafer). The bending prevention layer 3 prevents warpage of the base substrate 109 during handling such as grinding or moving. Subsequently, as shown in Fig. 12C, a blue tape-like bonding member 121 is attached to the ground base substrate 109, and a plurality of holes (3a) formed in the bending prevention layer (3) The sacrificial layer 2 is etched by providing the support substrate 9 to separate the base substrate 109 and the support substrates 2, 3 and 5 as shown in Fig. Here, the semiconductor device means a wafer separated from the supporting substrate (2, 3, or 5), or may be a semiconductor device having a wafer subjected to an additional process (for example, a separation process for each individual device).

According to the supporting substrate for a semiconductor device (2, 3, 5) and the method for manufacturing a semiconductor device using the same according to this embodiment, warping of the semiconductor element substrate is suppressed and the yield is improved. In addition, wet etching is inexpensive and easy compared with the laser lift-off method in which a separation layer is irradiated with laser through a glass substrate. In addition, the step of omitting the polymer bonding the semiconductor element substrate 110 to the glass substrate by using a tape is omitted, and the sacrifice layer 2 is cleanly removed, thereby improving the yield.

FIG. 13 is a view for explaining an example of a substrate bonding and debonding apparatus according to the present disclosure, and FIG. 18 is a view for explaining an example of a method of operating the substrate bonding and debonding apparatus. The substrate bonding and debonding apparatus includes a first bending inhibiting substrate 101, a second bending inhibiting substrate 102, a first fixing portion 301, and a second fixing portion 305 (see FIG. 18B). When the first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 are required to be used together, the second bending inhibiting substrate 102 is provided on the first bending inhibiting substrate 101 As shown in Fig. The first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 suppress the warpage of the semiconductor element substrate 107 during the manufacture and handling of the semiconductor element substrate 107. The first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 are formed with passages 3a for holes for removing the sacrificial layer 2. The sacrificial layer 2 may be formed on the semiconductor element substrate 107 or the first bending inhibiting substrate 101 and the second bending inhibiting substrate 102. 6 to 11 may be applied to the sacrificial layer 2 and the sacrificial layer 2 removing solution 9. The bonding layer 5 bonds the first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 to the sacrificial layers 2-1 and 2-2. As examples of the bending inhibiting substrates 101 and 102, the bending inhibiting layers described in Figs. 6 to 11 may be used.

The first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 may be fixed to the first fixing portion 301 and the second fixing portion 305 in a detachable manner. The first fixing part 301 and the second fixing part 305 can move independently of each other, and the number of the fixing parts and the number of the flexure-suppressing boards can be further added. Although possible, it is desirable to use two or more deflection suppression substrates for various functions.

As an example of the fixing portions 301 and 305, a chuck can be used. The method of fixing the first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 to the chuck may be, for example, electrical fixation, vacuum adsorption, or adsorption by air pressure by the Bernoulli principle.

In this example, the substrate bonding and debonding apparatus includes bonding modules 610, 620. For example, the bonding modules 610 and 620 may have a tubular structure, a container structure, or a chamber structure having an internal space that can be blocked from external contamination, and may be provided inside the bonding modules 610 and 620, Similarly, the first fixing part 301 and the second fixing part 305 may be provided.

As the semiconductor element substrate 107, a semiconductor element such as a DRAM, a semiconductor light emitting element, a semiconductor light receiving element, a 3D stacking package (e.g., memory, logic, MEMS, TSV, etc.) . The semiconductor element substrate 107 may be moved or processed in a state of being processed. For example, the semiconductor element substrate 107 may be heated by a process of grinding the semiconductor element substrate 107 or a deposition process for forming a semiconductor element on the semiconductor element substrate 107. In this case, And the yield is lowered.

The substrate bonding and debonding apparatus according to the present embodiment fixes the semiconductor element substrate 107 using the deflection suppression substrates 101 and 102 to perform a subsequent process and performs a process for reducing the thickness of the semiconductor element substrate 107 And / or suppress the warping of the semiconductor element substrate 107 during the semiconductor element forming process. Therefore, the above problem is prevented. Particularly, the substrate bonding and debonding apparatus is preferably capable of freely changing the position and direction so that the element layer of the semiconductor element substrate 107 faces upward or downward by using a plurality of deflection suppressing substrates, Since the semiconductor element substrate 107 is fixed to one deflection suppressing substrate or is separated from another deflection suppressing substrate, deflection is suppressed. Therefore, the substrate bonding and debonding apparatus is required not only as an apparatus for bonding the deflection suppression substrates 101 and 102 to the semiconductor element substrate 107, but also to change the side where the elements of the semiconductor element substrate 107 are formed to face downward or upward It can be effectively applied to suppress warpage.

In FIG. 13, the reference numerals will be described later.

Hereinafter, an example of a substrate bonding and debonding apparatus and a method of manufacturing a semiconductor element substrate using the same will be described with reference to the accompanying drawings.

14 is a view for explaining an example of a method of fixing the first bending inhibiting board and the semiconductor element substrate to the fixing part, and Fig. 15 is a view for explaining an example of a conveyance module including the substrate bonding and debonding device And FIG. 16 is a view for explaining an example in which the bending inhibiting substrate and the semiconductor element substrate are fixed to the fixing portion.

In this example, the substrate bonding and debonding device may include a transport module 401. First, the transfer module 401 supplies the deflection suppression substrates 101 and 102, the semiconductor element substrate 107, and the like to the bonding modules 610 and 620 side. The bending inhibiting substrate 101 or 102 or the semiconductor element substrate 107 may be provided in the path indicated by the arrow in Fig. 13 and the transfer module 401 may be provided with a robot arm structure, for example, as shown in Fig. have. Of course, it is possible for the transfer module 401 to have a structure different from that of the robot arm structure. The provided first bending inhibiting substrate 101 is aligned on the first fixing portion 301 and can be fixed to the first fixing portion 301 as shown in Figs. 14B and 16, as shown in Fig. 14A .

Optical means such as a camera may be used for alignment between the semiconductor element substrate 107 and the flexural restraining substrates 101 and 102 or between the two flexural restraining substrates 101 and 102. For this purpose, (101, 102) may have translucency. Further, micro-holes for alignment may be formed on the bending inhibiting substrates 101 and 102. [ The first fixing part 301 and the second fixing part 305 can be moved three-dimensionally including the vertical and horizontal directions for alignment.

FIG. 17 is a view for explaining an example of the bonding layer forming unit. The substrate bonding and debonding apparatus may include a bonding layer forming unit 501. FIG. For example, the bonding layer forming portion 501 may include the dispenser described in FIG. The bonding layer forming portion 501 may be formed around the bonding modules 610 and 620 to form the bonding layer 5 on the bending inhibiting substrates 101 and 102 mounted on the fixing portions 301 and 305. The bonding layer 105 can be formed as shown in FIG. 14B at a high speed by a dispenser. Alternatively, it is of course possible that the bending inhibiting substrates 101 and 102, in which the bonding layer 5 is formed, are mounted on the fixing portions 301 and 305 through a device or a process separate from the substrate bonding and debonding device.

Thereafter, as shown in Fig. 14C, the supporting layer 1 is bonded to the bonding layer 5 of the first bending inhibiting substrate 101. Fig. The bonding layer 5 may be formed on at least one of the first bending inhibiting substrate 101 and the supporting layer 1. [ The sacrificial layer 2-1 is preferably formed between the bonding layer 105 and the support layer 1. In this case, the sacrificial layer 2-1 is formed on the lower surface of the support layer 1, And can be aligned on the suppression substrate 101.

Subsequently, the wafer 201 on which the semiconductor light emitting element (for example, LED) is formed or the wafer 201 to be formed may be bonded on the support layer 1. [ The first fixing part 301 and the second fixing part 305 can pressurize the supporting layer 1 and the wafer 201 as shown in Fig. 14C. The sacrificial layer 2-2 can be added to the upper surface of the wafer 201 when it is necessary to reverse the semiconductor element substrate 107 (in this example, the combination of the support layer 1 and the wafer 201). The sacrificial layers 2-1 and 2-2 may be formed in a device or process (for example, a deposition process) separate from the substrate bonding and debonding device. However, the sacrificial layers 2-1 and 2-2 may be formed by using a dispenser Similarly, devices for forming sacrificial layers 2-1 and 2-2 may be provided in the substrate bonding and debonding device. For example, the sacrificial layers 2-1 and 2-2 may be formed on the semiconductor element substrate 107 rotated by the fixing portions 301 and 305 by a spin coating method.

FIG. 18 is a view for explaining an example of a method of reversing a semiconductor element substrate, and FIG. 19 is a view for explaining an example of a rotation module installed around the bonding module. The substrate bonding and debonding device may include a rotation module 450. When it is necessary to reverse the semiconductor element substrate 107 bonded to the first bending inhibiting substrate 101, the first bending inhibiting substrate 101 is first detached from the first fixing portion 301, and the rotation module 450 Can hold and hold the combined body of the first bending inhibiting board 101 and the semiconductor element board 107 as shown in Figs. 18A and 19B. As shown in Fig. 18 (b), in a state in which the semiconductor element substrate 107 is rotated downward, The inhibiting substrate 101 is fixed. At this time, the second bending inhibiting board 102 is loaded and fixed to the first fixing unit 301. The first fixing portion 301 and the second fixing portion 305 are moved to move the first bending inhibiting substrate 101 and the second bending inhibiting substrate 102 or between the semiconductor element substrate 107 and the bending inhibiting substrates 101 and 102 ). The first fixing portion 301 and the second fixing portion 305 are pressed and the second bending inhibiting substrate 102 and the semiconductor element substrate 107 are bonded.

FIG. 20 is a view for explaining an example of the curing module. In this example, the substrate bonding and debonding device may include a curing module 630. The combination of the first bending inhibiting substrate 101, the semiconductor element substrate 107 and the second bending inhibiting substrate 102 can be transferred from the bonding modules 610 and 620 to the curing module 630 shown in Figs. 13 and 20 . For example, the second bending inhibiting substrate 102 is detached from the first fixing unit 301, the first bending inhibiting substrate 101 is detached from the second fixing unit 305, and the first bending inhibiting substrate 101 A combination of the semiconductor element substrate 107 and the second bending inhibiting substrate 102 is provided into the curing module 630 by the transfer module 401. The curing module 630 includes, for example, a support 631 for supporting the assembly, a heater 633 for applying heat, and a chamber 635 in which the heater 633 and the heater 633 are installed. The curing module 630 hardens the bonding layer 105 at the process time and process temperature selected by selecting the material characteristic of the bonding layer 105 for bonding the support layer 1 (e.g., a metal substrate) and the bending inhibiting substrates 101 and 102 (Eg substrate separation process, etching process, electrode formation process, chip separation process, etc.) by making the adhesive force stronger and stronger.

21 is a view for explaining an example of a method of debonding the semiconductor element substrate 107 and the deflection restraining substrate, in which the substrate bonding and debonding apparatus includes a debonding module 640 (see FIG. 13) . When the curing process is completed, the first deflection suppressing substrate 101, the semiconductor element substrate 107 and the second deflection suppressing substrate 102 combined from the curing module 630 are transferred to the debonding module 630 by the transfer module 401, (640). The second bending inhibiting substrate 102 may be fixed to the fixing portion 301. The second bending inhibiting substrate 102 may be fixed to the fixing portion 301. [ 21A, the removing solution 9 is supplied to the holes 3a of the first bending inhibiting substrate 101 and the sacrificing layer 2-1 is removed to form the first bending inhibiting substrate 101. Then, Is separated from the semiconductor element substrate 107. The debonding module 640 may be provided with a removing solution supply part 701 for supplying the removing solution. The removal solution supply unit 701 supplies the removal solution supply nozzle to the respective holes 3a or supplies the removal solution 9 to the exposed surface of the first bending inhibition substrate 101 as a whole So that the solution can flow. The method of supplying the removing solution 9 in the debonding module 640 may be variously changed. In the debonding module 640, the process can be performed at room temperature, and the sacrificial layer 2 is selectively removed, so that the process is simple and efficient. Thus, as shown in FIG. 21B, the semiconductor element substrate 107 can be transferred to another device for subsequent processing while being bonded to the second bending inhibiting substrate 102 such that the supporting layer 1 faces upward.

As an alternative to the present example, it is also possible that the debonding module 640 and the curing module 630 are not provided together with the bonding modules 610 and 620 as shown in FIG. 13 but are separately provided in separate places.

22 to 24 are views for explaining another example of a method of manufacturing a semiconductor element substrate using the substrate bonding and debonding apparatus according to the present disclosure. As shown in FIGS. 22A and 22B, a first bending inhibiting substrate 101 The support layer 1 is bonded. A sacrificial layer 2 may be formed on the support layer 1 for bonding and the bonding layer 5 may be formed on the sacrificial layer 2 or the first bending inhibiting substrate 101. [ Thereafter, as shown in Fig. 22C, a wafer 201 on which a device such as a semiconductor light emitting element is formed or to be formed is bonded onto the support layer 1. [ The process shown in FIG. 22 may be performed using the bonding modules 610 and 620 described in FIGS. Hereinafter, the illustration of the fixing portions 301 and 305 is omitted in the explanation of the manufacturing method.

23 is a view for explaining an example of a laser lift-off process for removing a substrate of a semiconductor light emitting element from a wafer. The first bending inhibiting substrate 101, the supporting layer 1, and the combination of the wafers 201 From the substrate bonding and debonding device to the laser lift-off device. Prior to that, the curing process described in Figs. 13 to 21 can be performed.

When the wafer 201 bonded to the support layer 1 is a vertical LED wafer, the side of the vertical LED element and the support layer 1 are bonded. In this case, the substrate 10 of the vertical LED can be removed as shown in Fig. 23B by a laser lift-off process. The substrate of the vertical LED may be removed, and a chip forming process such as electrode formation may be further performed on the exposed semiconductor layer.

A plurality of semiconductor layers 30, 40, and 50 constituting a semiconductor light emitting device such as a vertical type LED includes a first semiconductor layer 30 (e.g., n-type GaN) having a first conductivity, And an active layer 40 (for example, p-type GaN) interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes E.g., an InGaN / GaN multiple quantum well structure). The first semiconductor layer 30 and the second semiconductor layer 50 may have a multi-layered structure. The first semiconductor layer 30 and the second semiconductor layer 50 may include a layer made of a different material inside or outside the plurality of semiconductor layers 30, May be provided. The plurality of semiconductor layers 30, 40, and 50 are grown using the growth substrate 10. The growth substrate is not particularly limited as long as a plurality of semiconductor layers 30, 40, and 50 can be grown, and is selected in consideration of a material constituting the plurality of semiconductor layers 30, 40, and 50. For example, Si, SiC , GaAs, Al 2 O 3 , and ZnO. In the case where the plurality of semiconductor layers 30, 40, and 50 are made of a group III nitride semiconductor, a sapphire (Al 2 O 3 ) substrate is mainly used.

The first bending inhibiting substrate 101 is formed on the surface of the growth substrate 10 such that when the growth substrate 10 is removed from the plurality of semiconductor layers 30, Thereby suppressing warpage. A supporting layer (1) is provided between the plurality of semiconductor layers and the bending inhibiting substrates (101, 102). The support layer 1 is bonded to a plurality of semiconductor layers by a bonding material 4 and is bonded to the bonding layer 5 by a sacrifice layer 2. The entirety of the support layer 1, the sacrificial layer 2, the bonding layer 5 and the first bending inhibiting substrate 101 may be regarded as a bending inhibiting structure for suppressing warping of a plurality of semiconductor layers. It is also possible that the sacrificial layer 2, the bonding layer 5, and the first bending inhibiting substrate 101 are integrated and mounted on and detached from the fixed portion of the substrate bonding and debonding device. In other respects, a combined body in which the plurality of semiconductor layers 30, 40, and 50, the bonding material 4, and the supporting layer 1 are integrated can be seen as the semiconductor element substrate 107 in this example.

After the laser lift-off process, the first bending inhibiting substrate 101 is separated from the supporting layer 1. [ This process can be performed in the debonding module 640 described in FIGS. For example, the vertical LED side on which the growth substrate 10 is removed is fixed to the fixing portion 301 of the debonding module 640 and the removing solution ( 9). ≪ / RTI > 24, the fixing sheet 105 (e.g., blue tape) is bonded to the vertical LED side 202 from which the growth substrate 10 has been removed, and the holes of the first bending inhibiting substrate 101 And supplying the removing solution 9 to the cleaning solution 3a. Fig. 25 is a view for explaining another example of the debonding method. As shown in Fig. 25, for example, a first bending inhibiting substrate 101 and the support layer 1 can be separated from each other. As described above, the batch-type debonding method is advantageous in that a plurality of substrates can be bonded together at one time. Even if the vertical type LEDs are separated into individual chips, they are fixed to the fixing sheet 105, which makes handling easy.

Figs. 26 and 27 are diagrams for explaining another example of a method of manufacturing a semiconductor element substrate using the substrate bonding and debonding apparatus according to the present disclosure. As shown in Fig. 22, for example, After the support layer 1 and the wafer 201 are bonded to the first bending inhibiting substrate 101 using the transfer module 401, the bonding modules 610 and 620 and the curing module 630 described in Fig. 21, The semiconductor device manufacturing process can be performed on the wafer 201 by moving to an apparatus used for a semiconductor device process such as a deposition apparatus. Thereafter, the wafer 201 is transferred to the substrate bonding and debonding apparatus, and the first bending inhibiting substrate 101 is rotated as shown in FIG. 26A by using the rotation module 450 and the bonding modules 610 and 620, , And the second bending inhibiting substrate 102 is aligned below the wafer 201. [ Thereafter, the second bending inhibiting substrate 102 and the sacrificial layer 2 formed on the wafer 201 are bonded. Thereafter, the curing process may be performed, and the debonding module 640 supplies the removing solution 9 as shown in FIG. 26B to separate the first bending inhibiting substrate 101.

27, the blue tape 105 is bonded to the support layer 1, and the removal solution 9 is supplied to the holes 3a of the second bending inhibiting substrate 102, The second bending inhibiting substrate 102 is separated.

The substrate bonding and debonding apparatus according to the present disclosure and the method for manufacturing the semiconductor element substrate 107 using the same can be applied to the semiconductor element substrate described in FIG.

28 to 33 are diagrams for explaining another example of a method of manufacturing a semiconductor element substrate using the substrate bonding and debonding apparatus according to the present disclosure, and are views for explaining an example of a method of manufacturing a TSV substrate.

First, as shown in FIG. 28A, the first bending inhibiting substrate 101 and the semiconductor element substrate 107 are transferred to the bonding modules 610 and 620 by the transfer module 401, and the first bending The inhibiting substrate 101 is fixed and the semiconductor element substrate 107 is aligned on the first bending inhibiting substrate 101. [ The bonding layer 5 can be formed on the first bending inhibiting substrate 101 as in the examples described above. The semiconductor element substrate 107 can be exemplified by the semiconductor element substrate 107 described with reference to Figs. 6, 7 and 8. In order to align the first bending inhibiting substrate 101 and the semiconductor element substrate 107, the first bending inhibiting substrate 101 may have a light transmitting property and a microhole for alignment may be formed. Subsequently, as shown in Fig. 28B, the sacrificial layer 2 and the bonding layer 5 are bonded. As the method of bonding, the method described in Figs. 6 to 9 can be used.

Next, the substrate is transferred from the substrate bonding and debonding apparatus to the thickness reducing apparatus, and the thickness reducing process is performed by, for example, grinding the back surface of the semiconductor element substrate 107 as shown in Fig. 29A. For the grinding process, the example described in Fig. 7 can be applied. As a result of the thickness reduction process, as shown in Fig. 29B, the back surface portion 33 having the grinding surface opposite to the side where the semiconductor element 43 is formed is exposed upward. At this time, the conductor 35 formed on the semiconductor element substrate may be exposed to the back surface portion 33 side.

Such a conductor 35 can be used as a power supply, a signal supply path, or a heat dissipation path. The first bending inhibiting substrate 101 prevents a problem such as bending of the semiconductor element substrate 107 due to stress caused by heat or friction in the thickness reducing process. 30A, the first bending inhibiting substrate 101 rotates and the rear surface of the semiconductor element substrate 107 is rotated by using the rotation module 450 and the bonding modules 610 and 620 in the substrate bonding and debonding apparatus 33 are oriented downward, and the second bending inhibiting substrate 102 is aligned below the semiconductor element substrate 107. The sacrificial layer 2 may be formed on the back surface portion 33 of the semiconductor element substrate 107 before the rotation of the first bending inhibiting substrate 101. [ Then, as shown in FIG. 30B, the semiconductor element substrate 107 is bonded to the second bending inhibiting substrate 102 with the bonding layer 5. Next, the curing process may be performed in the curing module 630, and the debonding module 640 may provide the removing solution 9 to the holes 3a of the first bending inhibiting substrate 101, The bending inhibiting substrate 101 is separated from the semiconductor element substrate 107 (see Fig. 30C).

Subsequently, as shown in Fig. 31A, a third bending inhibiting substrate 103 is provided on the bonding modules 610 and 620, and a further semiconductor element substrate 109 is prepared thereon. For example, a further semiconductor element substrate 109 is fixed to the third bending inhibiting substrate 103 and the thickness reducing process is performed in the manner described above, so that the backside 33 having the ground plane is prepared do. Thereafter, the semiconductor element substrate 107 fixed to the second bending inhibiting substrate 102 is removed from the debonding module 640 by the transfer module 401 and the semiconductor element substrate 107 is transferred to the second bending inhibiting substrate 102 using the rotation module 450 and the bonding modules 610 and 620 The semiconductor element substrate 107 fixed on the second bending inhibiting substrate 102 is aligned on the additional semiconductor element substrate 109 and bonded together as shown in Fig.

Next, in the debonding module 640, the removing solution 9 is provided in the hole 3a of the second bending inhibiting substrate 102 to separate the second bending inhibiting substrate 102 from the semiconductor element substrate 107 (See FIG. 32). As a result, a semiconductor element substrate stacked structure in which two semiconductor element substrates 107 and 109 are stacked is manufactured. By repeating this process, three or more semiconductor element substrate stacked structures can be manufactured.

Thereafter, as shown in FIG. 33A, the blue tape 105 is bonded to the semiconductor element substrate laminate structure, and the removing solution 9 is provided in the hole 3a of the third bending inhibiting substrate 103 to form the sacrificial layer 2 Is removed to separate the third bending inhibiting substrate 103 from the semiconductor element substrate laminate structure. This process can be performed by the method described in Fig.

According to the substrate bonding and debonding apparatus and the method for manufacturing a semiconductor element substrate using the substrate according to the present embodiment, since the process proceeds in a state where at least one deflection restraining substrate is always engaged or the upper and lower sides of the semiconductor element substrate are reversed, The present invention provides a highly effective and useful apparatus and method for suppressing warpage in a process in which the process needs to be carried out upside down.

Further, warpage of the semiconductor element substrate is suppressed, and the yield of the semiconductor element is improved.

The formation of the holes 3a for the removal solution used in the removal of the sacrificial layer 2 is advantageous in that a low cost and easy wet etching can be used as compared with the laser lift-off process.

Various embodiments of the present disclosure will be described below.

(1) A substrate bonding and debonding apparatus for bonding and debonding a semiconductor element substrate, the apparatus comprising: a first bending inhibiting substrate for fixing a semiconductor element substrate, the first bending inhibiting substrate comprising a semiconductor element substrate and a first bending inhibiting substrate 1 < / RTI > sacrificial layer; And a second bending inhibiting substrate provided on an opposite side of the first bending inhibiting substrate with respect to the semiconductor element substrate and having a passage for the removing solution.

The substrate bonding and debonding apparatus also includes a case where there is one deflection suppressing substrate.

(2) a bonding layer formed on the first bending inhibiting substrate to avoid a passage, the bonding layer being bonded to the first sacrificial layer formed on the semiconductor element substrate.

(3) a first fixing part, to which the first bending inhibiting board is fixed so as to be detachable; And a second fixing part for fixing the second bending inhibiting board so as to be longitudinally detachable, wherein the first fixing part and the second fixing part move independently of each other, and the first bending inhibiting board and the second bending inhibiting board are rotated And transferring the substrate.

(4) The second bending inhibiting substrate is bonded to the second sacrificial layer formed on the semiconductor element substrate. The removal solution is supplied to the first bending inhibiting substrate through the passage to remove the first sacrificing layer, Wherein the substrate is separated from the device substrate.

(5) Before the second bending inhibiting substrate is bonded to the second sacrificial layer, the first bending inhibiting substrate rotates and the direction of the semiconductor element substrate is inverted, and the second bending inhibiting substrate faces the second Wherein the sacrificial layer is bonded to the sacrificial layer.

(6) A third bending inhibiting substrate, wherein the second bending inhibiting substrate on which the semiconductor element substrate is fixed is rotated and the direction of the semiconductor element substrate is inverted and bonded to a third sacrificial layer formed on the inverted semiconductor element substrate And the second bending inhibiting substrate is separated from the semiconductor element substrate as the removal solution is supplied through the passage of the second bending inhibiting substrate to remove the second sacrificial layer.

(7) a bonding module having an internal space for accommodating the first fixing part and the second fixing part; And a transfer module for transferring the first bending inhibiting substrate and the semiconductor element substrate onto the first fixing part.

(8) a fixing unit for fixing the second bending inhibiting board; And a removing solution supply unit for supplying the removing solution to the first deflection suppressing substrate through the passage.

(9) A substrate bonding and debonding device comprising: a first deflection suppressing substrate; and a rotation module for rotating the semiconductor element substrate.

(10) The substrate bonding and debonding apparatus according to any one of the preceding claims, wherein the semiconductor element substrate comprises one of a through silicon via (TSV) substrate and a wafer on which a semiconductor light emitting device is formed.

(11) A method of manufacturing a semiconductor element substrate, comprising: a first deflection suppressing substrate for fixing a semiconductor element substrate, the method comprising: a removing solution used for removing a first sacrificial layer interposed between a semiconductor element substrate and a first deflection suppressing substrate Fixing the semiconductor element substrate to the first bending inhibiting board on which the passages are formed; Reversing the direction of the semiconductor element substrate by rotating the first bending inhibiting substrate; Bonding a second bending inhibiting substrate having a passage for the removing solution to the semiconductor element substrate via a second sacrificial layer on the opposite side of the first bending inhibiting substrate; And removing the first bending inhibiting substrate from the semiconductor element substrate by supplying the removing solution through the passage of the first bending inhibiting substrate to remove the first sacrificing layer. .

And forming a bonding layer to be bonded to the first sacrificial layer on at least one of the first bending inhibiting substrate and the semiconductor element substrate by avoiding the passage of the first sacrificial layer (12).

(13) The step of fixing the semiconductor element substrate to the first bending inhibiting substrate includes: a step of fixing the first bending inhibiting substrate on the first fixing portion; And aligning the semiconductor element substrate on the first bending inhibiting substrate and pressing the second element on the first bending inhibiting substrate to bond the semiconductor element substrate to the first bending inhibiting substrate.

(14) The step of reversing the direction of the semiconductor element substrate comprises: a step of releasing the first bending inhibiting board and the semiconductor element board from the fixing unit; Reversing the direction of the semiconductor element substrate by holding the first bending inhibiting board and the semiconductor element substrate combination with the robot arm; And fixing the first bending inhibiting substrate to the other fixing portion.

(15) After the step of bonding the second bending inhibiting substrate to the semiconductor element substrate via the second sacrificial layer at the side opposite to the first bending inhibiting substrate, before separating the first bending inhibiting substrate from the semiconductor element substrate, 1. A method of manufacturing a semiconductor device substrate, comprising: curing a combination of a first bending inhibiting substrate, a semiconductor element substrate, and a second bending inhibiting substrate.

(16) The step of separating the first bending inhibiting substrate from the semiconductor element substrate comprises: a step of fixing the second bending inhibiting substrate to the fixing portion of the debonding module; A process of supplying the removing solution through the passage of the first bending inhibiting substrate; And separating the semiconductor element substrate and the second bending inhibiting substrate from which the first bending inhibiting substrate has been separated from the debonding module.

(17) After the process of fixing the first bending inhibiting substrate on the first fixing unit, before the process of bonding the first bending inhibiting substrate and the semiconductor element substrate, the first bending inhibiting substrate is bonded to the first bending inhibiting substrate And forming a bonding layer on the semiconductor substrate.

(18) The step of fixing the semiconductor element substrate to the first bending inhibiting substrate includes: a step of bonding the supporting layer on the bonding layer of the first bending inhibiting substrate; And a step of bonding a vertical LED having a growth substrate and a plurality of semiconductor layers to a support layer, wherein the growth substrate is separated by a laser lift-off method before the step of reversing the direction of the semiconductor element substrate ≪ / RTI >

(19) The step of fixing the semiconductor element substrate to the first bending inhibiting substrate includes: a step of bonding the supporting layer on the bonding layer of the first bending inhibiting substrate; And forming a semiconductor element on the wafer before the step of reversing the direction of the semiconductor element substrate includes the step of bonding a wafer to a support layer, .

(20) The semiconductor element substrate is a TSV (Through Silicon Via) substrate. Before the semiconductor element substrate is turned upside down, the thinning process of the TSV substrate is performed while the semiconductor element substrate is fixed to the first bending inhibiting substrate. The method comprising the steps of: providing a substrate;

(21) fixing an additional semiconductor element substrate to the third bending inhibiting board; Performing a thinning process on the additional semiconductor element substrate; Stacking a semiconductor element substrate fixed on a second bending inhibiting substrate on a side where a thinning process of an additional semiconductor element substrate is performed after the first bending inhibiting substrate is separated from the semiconductor element substrate; And removing the second deflection inhibiting substrate from the semiconductor element substrate by providing a remover solution in the passage of the second deflection inhibiting substrate.

According to one substrate bonding and debonding apparatus and a method of manufacturing a semiconductor element substrate using the same according to the present disclosure, since the semiconductor element substrate is turned upside down in a state where at least one deflection suppression substrate is always engaged, It provides a very effective and useful device and method for warping suppression in many processes where it is necessary to turn over.

Further, warpage of the semiconductor element substrate is suppressed, and the yield of the semiconductor element is improved.

In addition, by forming a passageway for the sacrificial layer removing solution on the deflection suppressing substrate, it is advantageous to use a low-cost and simple wet etching as compared with the laser lift-off process.

107, 109: semiconductor element substrate, 2: sacrificial layer 3: bending inhibiting layer
5: bonding layer 3a: hole 101: first bending inhibiting substrate 102: second bending inhibiting substrate
103: third bending inhibiting substrate 105: fixing sheet 201: wafer
610, 620: bonding module 630: curing module 640: debonding module

Claims (11)

A method of manufacturing a semiconductor device substrate,
A first deflection suppressing substrate for fixing a semiconductor element substrate is provided with a first deflection suppressing substrate having a passage for a removing solution used for removing a first sacrificing layer interposed between a semiconductor element substrate and a first deflection suppressing substrate, Securing a substrate;
Reversing the direction of the semiconductor element substrate by rotating the first bending inhibiting substrate;
Bonding a second bending inhibiting substrate having a passage for the removing solution to the semiconductor element substrate via a second sacrificial layer on the opposite side of the first bending inhibiting substrate; And
And removing the first bending inhibiting substrate from the semiconductor element substrate as the first sacrificial layer is removed by supplying the removing solution through the passage of the first bending inhibiting substrate,
And forming a bonding layer to be bonded to the first sacrificial layer on at least one of the first bending inhibiting substrate and the semiconductor element substrate by avoiding the passage. delete The method according to claim 1,
The step of securing the semiconductor element substrate to the first bending inhibiting substrate comprises:
Fixing the first bending inhibiting board on the first fixing part; And
And aligning the semiconductor element substrate on the first bending inhibiting substrate and pressing the second bending inhibiting substrate against the second bending inhibiting substrate to bond the first bending inhibiting substrate to the semiconductor element substrate. The method according to claim 1,
Reversing the direction of the semiconductor element substrate comprises:
A process of releasing the first bending inhibiting board and the semiconductor element board from the fixing unit;
Reversing the direction of the semiconductor element substrate by holding the first bending inhibiting board and the semiconductor element substrate combination with the robot arm;
And fixing the first bending inhibiting substrate to the other fixing portion. The method according to claim 1,
After the step of bonding the second bending inhibiting substrate to the semiconductor element substrate via the second sacrificial layer at the opposite side of the first bending inhibiting substrate,
Before separating the first bending inhibiting substrate from the semiconductor element substrate,
And curing the combination of the first bending inhibiting substrate, the semiconductor element substrate, and the second bending inhibiting substrate. The method according to claim 1,
Separating the first deflection inhibiting substrate from the semiconductor element substrate comprises:
Fixing the second bending inhibiting board to the fixing portion of the debonding module;
A process of supplying the removing solution through the passage of the first bending inhibiting substrate; And
And removing the semiconductor element substrate and the second bending inhibiting substrate from which the first bending inhibiting substrate has been separated from the debonding module. A method of manufacturing a semiconductor device substrate,
A first deflection suppressing substrate for fixing a semiconductor element substrate is provided with a first deflection suppressing substrate having a passage for a removing solution used for removing a first sacrificing layer interposed between a semiconductor element substrate and a first deflection suppressing substrate, Securing a substrate;
Reversing the direction of the semiconductor element substrate by rotating the first bending inhibiting substrate;
Bonding a second bending inhibiting substrate having a passage for the removing solution to the semiconductor element substrate via a second sacrificial layer on the opposite side of the first bending inhibiting substrate; And
And removing the first bending inhibiting substrate from the semiconductor element substrate as the first sacrificial layer is removed by supplying the removing solution through the passage of the first bending inhibiting substrate
The step of securing the semiconductor element substrate to the first bending inhibiting substrate comprises:
Fixing the first bending inhibiting board on the first fixing part; And
And aligning the semiconductor element substrate on the first bending inhibiting substrate and pressing the second bending inhibiting substrate against the second bending inhibiting substrate to bond the semiconductor element substrate to the first bending inhibiting substrate,
After the process of fixing the first bending inhibiting substrate on the first fixing portion,
Before the process of bonding the first bending inhibiting substrate and the semiconductor element substrate,
And forming a bonding layer to be bonded to the first sacrificial layer on the first bending inhibiting substrate by avoiding the passage. The method according to claim 1,
The step of fixing the semiconductor element substrate to the first bending inhibiting substrate comprises:
Bonding the support layer to the bonding layer of the first bending inhibiting substrate; And
And bonding the vertical LED having the growth substrate and the plurality of semiconductor layers to the support layer,
And separating the growth substrate by a laser lift-off method prior to the step of inverting the direction of the semiconductor element substrate. The method according to claim 1,
The step of fixing the semiconductor element substrate to the first bending inhibiting substrate comprises:
Bonding the support layer to the bonding layer of the first bending inhibiting substrate; And
And a step of bonding a wafer onto the support layer,
And forming a semiconductor element on the wafer before the step of reversing the direction of the semiconductor element substrate. The method according to claim 1,
The semiconductor element substrate is a TSV (Through Silicon Via) substrate. Before the semiconductor element substrate is turned upside down, a thinning process of a TSV substrate is performed in a state where the semiconductor element substrate is fixed to the first bending inhibiting substrate ≪ RTI ID = 0.0 > 1, < / RTI > A method of manufacturing a semiconductor device substrate,
A first deflection suppressing substrate for fixing a semiconductor element substrate is provided with a first deflection suppressing substrate having a passage for a removing solution used for removing a first sacrificing layer interposed between a semiconductor element substrate and a first deflection suppressing substrate, Securing a substrate;
Reversing the direction of the semiconductor element substrate by rotating the first bending inhibiting substrate;
Bonding a second bending inhibiting substrate having a passage for the removing solution to the semiconductor element substrate via a second sacrificial layer on the opposite side of the first bending inhibiting substrate;
Separating the first bending inhibiting substrate from the semiconductor element substrate as the first sacrificial layer is removed by supplying the removing solution through the passage of the first bending inhibiting substrate;
Fixing an additional semiconductor element substrate to the third bending inhibiting substrate;
Performing a thinning process on the additional semiconductor element substrate;
Stacking a semiconductor element substrate fixed on a second bending inhibiting substrate on a side where a thinning process of an additional semiconductor element substrate is performed after the first bending inhibiting substrate is separated from the semiconductor element substrate; And
And removing the second deflection inhibiting substrate from the semiconductor element substrate by providing a removal solution in the passage of the second deflection suppressing substrate,
The step of fixing the semiconductor element substrate to the first bending inhibiting substrate comprises:
Bonding the support layer to the bonding layer of the first bending inhibiting substrate; And
And a step of bonding a wafer onto the support layer,
And forming a semiconductor element on the wafer before the step of reversing the direction of the semiconductor element substrate.
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