KR101648900B1 - Ion Source and Deposition Apparatus therewith - Google Patents

Abstract

The ion source may have a magnetic field, a gas injection extension, and an electrode. The magnetic field portion is opened at one side facing the object to be processed, and the inner magnetic pole and the outer magnetic pole are spaced apart from each other at the opening side, and the other side is connected with a magnetic core. The magnetic field portion forms a plasma ignition and an electron acceleration region on the open side. The inner magnetic pole or the outer magnetic pole has a gas injection portion whose one side opens in the direction of the object to be processed. The gas injection extension part is electrically insulated and coupled to the inner magnetic pole or the outer magnetic pole, communicates with the gas injection part, and protrudes in the direction of the object to be processed. The electrodes are spaced apart from the magnetic head within the magnetic head.

Description

[0001] ION SOURCE AND DEPOSITION APPARATUS [0002]

The present invention relates to an ion source and a deposition apparatus having the ion source.

Ion sources are used for substrate modification and thin film deposition. The ion source has a structure that forms a closed drift loop using electrodes and magnetic poles, and moves electrons at high speed along the closed loop. An ionized gas is supplied from the outside to the inside of the process chamber in the closed loop through which the electrons move.

U.S. Patent No. 7,425,709 has a separate gas supply tube and gas diffusing member for supplying ionizing gas from the outside into the ion source. Thus, the conventional ion source receives the ionized gas from the rear end to the inside, generates plasma therein, and discharges the plasma ions toward the substrate by the inner / outer pressure difference.

However, in the conventional ion source, an etching phenomenon may occur on the electrode surface in the process of generating plasma ions. The etched materials may be ejected to the outside together with the plasma ions due to the pressure difference, which may cause impurity contamination. In addition, particle particles in the spitting area adhere to the electrodes, which can result in arcing between the electrodes and the magnetic poles. Arc generation can produce another impurity. These impurities may degrade the ionization performance of the ion source as well as the deposition quality.

In order to solve such a problem, a method of changing the polarity of the electrode is disclosed in U.S. Patent Nos. 6,750,600, 6,870,164, and 10-2011-0118622. However, these methods also have limitations in preventing deposition ions from sticking to the electrodes.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems,

First, the deposition of contaminants on substrates, electrodes,

Second, the deposition ions are minimized from sticking to the electrodes,

Third, it minimizes arc generation and particle generation,

Fourth, the plasma ions or the deposition ions can easily and quickly move to the substrate,

Fifth, an ion source and a deposition apparatus having the ion source capable of minimizing the surface damage of the substrate when the plasma ions or the deposition ions collide with the substrate are provided.

In order to achieve the above object, the ion source of the present invention may include a magnetic field, a gas injection extension, and an electrode.

The magnetic field portion is configured to open one side facing the object to be processed. The magnetic field portion is disposed on the open side of the inner magnetic pole and the outer magnetic pole so as to form an open slit. The magnetic field part can be closed by connecting the other side with a magnetic core. The magnetic field portion can form a plasma ignition and an electron acceleration region on the open side. The inner magnetic pole or the outer magnetic pole may have a gas injection portion in which one side is opened in the direction of the object to be processed rather than the direction of the opening slit or the inner space.

The gas injection extensions may be electrically insulated and coupled to inner or outer poles. The gas injection extension communicates with the gas injection portion of the magnetic book. The gas injection extension may protrude from the inner or outer magnetic pole in the direction of the object to be processed.

The electrode is located at the bottom of the open slit in the inner space of the magnetic lance and can be spaced apart from the magnetic lance.

In an ion source according to the present invention, the gas injection extensions may comprise an electrical insulator.

In the ion source according to the present invention, the gas injection extension may include an electrical insulating member, a piping member, and the like.

The electrically insulating member is coupled to an inner or outer magnetic pole. The electrical insulating member has a first penetrating portion. The first penetrating portion communicates with one opening portion of the gas injecting portion.

The piping member is coupled to the electrical insulating member. The pipe member has a second penetrating portion. The second penetrating portion communicates with the first penetrating portion at one side and the other side opens toward the object to be processed.

In the ion source according to the present invention, the piping member may have a depression in the boundary region with the electrically insulating member.

In the ion source according to the present invention, the electrically insulating member may have a depression at the boundary region with the piping member, or at the boundary region with the inner or outer magnetic pole.

In an ion source according to the present invention, the plasma ignition and electron acceleration regions can be configured to form a plurality of closed loops.

The ion source according to the present invention may comprise a power distribution unit. The power divider can generate and apply a direct current, alternating current, or pulse voltage to the electrode in a multi-loop ion source having a plurality of electrodes.

In the ion source according to the present invention, the gas injection unit may be configured to include a gas inlet, a gas dispersion unit, a gas ejector, and the like.

Gas flows into the gas inlet from the outside.

The gas distributing portion communicates with the gas inlet, is formed along the longitudinal direction of the inner magnetic pole or the outer magnetic pole, and can have a wider cross section than the gas inlet.

The gas spouting part communicates with the gas dispersion part at one side along the longitudinal direction of the inner magnetic pole or the outer magnetic pole, and the other side opens toward the object to be treated. The gas ejection portion may have a smaller cross section than the gas dispersion portion. The gas spouting part may be composed of a slit to be connected or a plurality of through holes to be spaced apart.

The deposition apparatus having an ion source according to the present invention may include a process chamber, an ion source, first and second gas injectors, and the like.

The process chamber defines an enclosed space therein.

The ion source is mounted in the process chamber. The ion source may comprise a magnetic head, a gas injection extension, and an electrode. The magnetic field portion is opened at one side facing the object to be processed, and the inner magnetic pole and the outer magnetic pole are spaced apart from each other to form an opening slit, and the other side is closed by a magnetic core to form a plasma ignition and an electron acceleration region can do. The inner magnetic pole or the outer magnetic pole may have a gas injection portion in which one side is opened in the direction of the object to be processed rather than the direction of the opening slit or the inner space. The gas injection extension may be electrically insulated and coupled to the inner or outer magnetic poles, communicate with the gas injection portion, and may protrude from the inner or outer magnetic poles in the direction of the object to be processed. The electrode may be spaced apart from the magnetic book at the bottom of the open slit in the internal space of the magnetic book.

The first gas injector may inject reaction or deposition gas into the process chamber through the gas injection portion and the gas injection extension.

A second gas injector may inject a process gas into the process chamber.

In a deposition apparatus having an ion source according to the present invention, the plasma ignition and electron acceleration regions can be configured to form a plurality of closed loops.

A deposition apparatus having an ion source according to the present invention can include a power distributor. The power divider can apply a plurality of electrodes to the electrode in the configuration of multiple loops by generating DC, AC, or pulse voltage.

According to the ion source and the deposition apparatus of the present invention having such a configuration, it is possible to minimize the generation of etchant contaminants in the ion source itself, and as a result, the deposition of etchant contaminants on the electrode or magnetic pole of the ion source can be reduced. In addition, deposition of contaminants on the substrate on which only the desired material is to be deposited can be minimized.

 According to the ion source and the deposition apparatus according to the present invention, deposition ions generated in the process chamber can be minimized from adhering to the electrode of the ion source, and generation of an arc and thereby generation of particles can be reduced.

According to the ion source and the deposition apparatus of the present invention, the plasma ion or the deposition ion can flow quickly to the substrate, so that the plasma ion or the deposition ion can easily and quickly move to the substrate.

According to the ion source and the deposition apparatus of the present invention, damage of the plasma ion or the deposition ion on the substrate surface can be minimized.

1A and 1B are a perspective view and a cross-sectional view showing a first embodiment of an ion source according to the present invention.
2A to 2D are cross-sectional views showing examples of modifications of the gas injection extension of the ion source according to the present invention.
3A and 3B are a perspective view and a cross-sectional view showing a second embodiment of the ion source according to the present invention.
4A and 4B are a perspective view and a cross-sectional view showing a third embodiment of the ion source according to the present invention.
5A and 5B are a perspective view and a cross-sectional view showing a fourth embodiment of the ion source according to the present invention.
6A and 6B are a perspective view and a cross-sectional view showing a fifth embodiment of the ion source according to the present invention.
7 shows a deposition apparatus having an ion source according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1A and 1B are a perspective view and a cross-sectional view showing a first embodiment of an ion source according to the present invention.

1A and 1B, the first embodiment includes a magnetic loop 10, an inner stimulating gas injection portion 20, an inner stimulating gas injection extension portion 30, an electrode 40, And the like.

The magnetic latch 10 can be opened at the front side facing the substrate, and the side and rear sides can be closed. On the open side, the inner magnetic pole 11 and the outer magnetic pole 13 are disposed apart from each other. A magnet may be provided at the lower end of the inner magnetic pole 11. For example, the inner magnetic pole 11 may be arranged to be an N pole, the outer magnetic pole 13 to be an S pole, and the upper portion to be an N pole.

And a magnetic core that is integrally or detachably coupled to the inner and outer magnetic poles 11 and 13 on the closed side. Fig. 1B shows that the magnetic core is formed integrally with the inner and outer magnetic poles 11 and 13. Here, the magnetic core may mean the entire rear end excluding the inner magnetic pole 11 and the outer magnetic pole 13 forming the accelerated closed loop on the open side. The outer magnetic pole 13 may be magnetically coupled to the S pole which is the lower end of the magnet through the magnetic core, and may have the S pole. The magnetic core is a passage through which the magnetic force lines of the S pole, which is the lower end of the magnet, pass through and can be made of a material having a high magnetic permeability. The magnetic core can also function to minimize the magnetic influence of the magnet, that is, the magnetic force line of the S pole, which is the lower end of the magnet, affects the magnetic force line of the N pole at the upper end.

The inner magnetic pole 11 may include an inner magnetic pole gas injecting portion 20 for supplying gas toward the front substrate. 1B, the inner stimulating gas injecting unit 20 may include an inner stimulating gas inlet IN20, an inner stimulating gas dispersing unit DIS20, and an inner stimulating gas spraying unit OUT20.

The inner stimulating gas inlet (IN20) receives gas from the outside. The inner stimulating gas inlet portion IN20 may be a through hole such as a circular hole penetrating the inner magnetic pole 11 forward from the rear. A circular tube may be inserted into the through-hole. The inner stimulating gas inlet IN20 may be formed with a plurality of spaced apart predetermined intervals depending on the size of the ion source.

The gas injected into the inner stimulating gas inlet IN20 may be a reaction gas such as O ₂ or N ₂ or a gas such as CH ₃ COOH, CH ₄ , CF ₄ , SiH ₄ , NH ₃ , TMA And the like.

The inner stimulating gas dispersing part DIS20 communicates with the inner stimulating gas inlet part IN20 and may have a circular or square cross section. The inner stimulating gas dispersing unit DIS20 can be formed along the longitudinal direction of the inner magnetic pole 11. [ The inner stimulating gas dispersing part DIS20 may have a wider cross section than the inner stimulating gas inlet part IN20. The inner stimulating gas dispersing unit DIS20 can evenly disperse the gas flowing from the inner stimulating gas inlet IN20 into the entire inside of the inner magnetic pole 11. [

The inner stimulating gas spouting unit OUT20 can be formed along the longitudinal direction of the inner magnetic pole 11. [ One side of the inner stimulating gas discharge portion OUT20 communicates with the inner stimulating gas dispersing portion DIS20 and the other side communicates with the substrate direction. The inner stimulating gas ejecting portion OUT20 has a smaller cross section than the inner stimulating gas dispersing portion DIS20 and can eject the gas in the inner stimulating gas dispersing portion DIS20 toward the substrate. The inner stimulating gas spouting unit OUT20 may be a continuous slit.

The inner stimulating gas injection extension 30 can be extended to the front end surface of the inner magnetic pole 11. [ The inner stimulating gas injection extension part 30 may have a penetration part T30 therein. The penetrating portion T30 has one side communicated with the inner stimulating gas spouting portion OUT20 and the other side opened with the upper side. The inner stimulating gas injection extension 30 may be configured to protrude upward from the upper surface of the inner magnetic pole 11. As shown in Figs. 1A and 1B, the inner stimulating gas injection extension 30 may be a plate having slits opened up and down along the longitudinal direction.

The inner stimulating gas injection extension 30 may be electrically insulated from the inner magnetic pole 11 and coupled thereto. The inner stimulating gas injection extension 30 may be made of an electrical insulator, for example, ceramic, aluminum oxide, Teflon, or the like.

The gas ejected through the inner stimulus gas injection extensions 30 is ionized away from the electrode 40 of the ion source, for example, near the substrate and deposited on the substrate. As a result, the probability of the ions moving toward the electrode 40 is low, so that adhesion of the deposition ions to the electrode 40 can be minimized.

The inner stimulating gas injection extension 30 can form a gas flow path in the direction of the substrate. The gas flow path can serve as a guide for guiding the ions and the like to the substrate, thereby enhancing the process efficiency of deposition and the like.

The electrode 40 may be located in the magnetic pocket 10 between the inner and outer magnetic poles 11 and 13 and may be spaced apart from the magnetic pocket 10 in the lower portion of the accelerator closed loop .

A power source (V) is connected to the electrode (40), and the power source (V) may be a high voltage alternating current, a direct current, or a pulse.

When a high voltage is applied to the electrode 40, heat is generated in the electrode 40. In order to cool such heat, the electrode 40 may be provided with a cooling channel or a cooling tube CT made by processing the electrode 40. The cooling channel or the cooling tube (CT) can be formed of a metal having excellent electrical conductivity and thermal conductivity. Cooling water flows through the cooling channel or the cooling tube (CT).

The ion source of the first embodiment shown in Figs. 1A and 1B has an elliptical acceleration between the inner magnetic pole 11 and the outer magnetic pole 13 by a magnetic field and an electric field formed by the magnetic pole 10 and the electrode 40 A closed loop can be formed. In the accelerated closed loop, electrons move at high speed and collide with process gases such as Ar, resulting in argon ions (Ar ⁺ ).

The electrode 40 forms an electric field to move argon ions (Ar ^< ^{+ &} gt ^; ) toward the substrate. The argon ion (Ar ⁺ ) moves to the substrate with energy and collides with an evaporation gas such as SiH ₄ that is ejected through the upper opening of the inner stimulus gas injection extension part 30 in the process, (Si &^lt;" ^{4 >} ). Thereafter, silicon ions (Si ^4- ) are deposited on the substrate surface to form a silicon film.

If the ion source does not have the inner stimulating gas injection extension 30 protruding in the direction of the substrate from the inner magnetic pole 11, the silicon ion (Si ^4- ) moves to the electrode 40 to which the positive high voltage is applied And may adhere to the electrode 40, which may generate an arc between the electrode 40 and the magnetic poles 11 and 13. [

1A and 1B, the inner stimulating gas injection extension 30 is shown as having one opening at the front open end, but the structure of the front open end is not limited thereto. For example, the inner stimulating gas injection extension part 30 may further include a T-shaped flow path changing part at the front open end. The channel changing portion may be constituted by a left shunt extending between the 9 o'clock direction and the 12 o'clock direction, and a right shunt extending between the 12 o'clock direction and the 3 o'clock direction. Here, the lengths of the left shunt and the right shunt may be enough to change the gas ejection direction. Further, the left and right shunts of the flow path changing portion may be formed in the same or similar shape as the inner stimulating gas injection extending portion 30, and may be, for example, a plate having slits opened upward and downward therein.

2A to 2D are cross-sectional views showing examples of modifications of the gas injection extension of the ion source according to the present invention.

2A is a cross-sectional view showing a first modification of the gas injection extension.

As shown in FIG. 2A, the gas injection extension portion 50 may include an electric insulating member 51, a pipe member 53, and the like.

The electric insulating member 51 is coupled to the inner magnetic pole 11. The electric insulating member 51 has a penetrating portion T51. The lower side of the penetrating portion T51 is communicated with the gas spouting portion OUT20 of the inner stimulating gas injecting portion 20 and the other side is opened upward. The electric insulating member 51 may be a plate having a slit protruding upward from the upper surface of the inner magnetic pole 11 and opening up and down along the longitudinal direction thereof. The electrical insulating member 51 may be formed of an electrical insulating material, for example, ceramic, aluminum oxide, Teflon, or the like.

The piping member 53 is coupled to the upper portion of the electric insulating member 51. The piping member 53 has a penetrating portion T53. The lower side of the penetrating portion T53 is communicated with the penetrating portion T51 of the electric insulating member 51 and the other side is opened toward the substrate. The piping member 53 protrudes upwardly from the electrically insulating member 51. The pipe member 53 may be a plate having a slit that opens upward and downward along the longitudinal direction. The piping member 53 may be formed of an electrical insulator of the same material as the electrical insulator 51, or may not be an electrical insulator.

2B is a sectional view showing a second modification of the gas injection extension portion.

2B, the gas injection extension 60 may include an electrical insulating member 51 having a penetrating portion T51, a piping member 63 having a penetrating portion T63, and the like .

The second modification differs from the first modification in that the depression R1 is formed in the lower end side of the piping member 63. [ Deposition ions, plasma ions, and etching contaminants are hardly deposited on the depressions R1. As a result, it is possible to prevent the inner magnetic pole 11 and the pipe member 63 from being electrically short-circuited.

Since the remaining configuration of the second modification is the same as the corresponding configuration of the first modification of Fig. 2A, the detailed description of the remaining configuration is replaced with the description of the first modification.

2C and 2D are cross-sectional views showing the third and fourth modifications of the gas injection extension portion.

2C, the gas injection extension portion 70 can include an electrical insulating member 71 having a penetrating portion T71, a piping member 53 having a penetrating portion T53, and the like . 2D, the gas injection extension portion 80 includes an electrical insulating member 81 having a penetrating portion T81, a piping member 53 having a penetrating portion T53, and the like .

As shown in Figs. 2C and 2D, the third and fourth modifications are different from the first modification of Fig. 2A in that depressions R2 and R3 are formed on the upper end side or the lower end side of the electrical insulating members 71 and 81, . Deposition ions, plasma ions, etching contaminants and the like are hardly deposited on the depressions R2 and R3, like the depressions R1 of the second modification. As a result, it is possible to prevent the inner magnetic pole 11 and the pipe member 53 from being electrically short-circuited.

The remaining configuration of the third and fourth modifications is the same as the corresponding configuration of the first modification of Fig. 2A, and therefore, the detailed description of the remaining configuration is omitted from the description of the first modification.

3A and 3B are a perspective view and a cross-sectional view showing a second embodiment of the ion source according to the present invention.

The second embodiment differs from the first embodiment in that the outer pole gas injecting extensions 90A and 90B are disposed in the outer pole 13. As shown in Fig. 3A, the outer pole gas injection extensions 90A and 90B can be formed only in the straight line region of the elliptical closed loop. In other words, it is possible to arrange them linearly on both sides of the inner magnetic pole 11 therebetween. Of course, it is not excluded that the outer stimulating gas injection extensions 90A and 90B are formed in an elliptical shape along the elliptical closed loop.

The outer stimulating gas injection extensions 90A and 90B may be extended to the front end surface of the outer magnetic pole 13. [ The outer stimulus gas injection extensions 90A and 90B may form through portions T90A and T90B therein. The penetrating portions T90A and T90B have one side communicated with the outside stimulating gas spouting portions OUT22 and OUT24 and the other side opened with the upper side. The outer stimulating gas injection extensions 90A and 90B may be plates having upper and lower slits protruding upward from the outer magnetic pole 11 and opening up and down along the longitudinal direction.

The outer stimulating gas injection extensions 90A and 90B may be electrically insulated from the outer magnetic pole 13 and coupled thereto. The outer pole gas injection extensions 90A and 90B may be made of an electrical insulator such as ceramic, aluminum oxide, Teflon, or the like.

The gas ejected through the outer stimulus gas injection extensions 90A and 90B is ionized near the substrate and deposited on the substrate so that the deposition ions move toward the electrode 40 and the probability of sticking to the electrode 40 is low.

The outer pole gas injection extensions 90A and 90B can form a gas flow path in the substrate direction.

In Figs. 3A and 3B, the outer stimulating gas injection extensions 90A and 90B are shown as having one opening at the front open end, but the structure of the front open end is not limited thereto. For example, the outer stimulating gas injection extensions 90A and 90B may further include a "? &Quot; and "? "Type flow path changing portion which is inclined toward the inner magnetic pole 11 at the front open end. The left channel changing portion coupled to the outside stimulating gas injection extending portion 90A is opened to extend between the 12 o'clock direction and the 3 o'clock direction and is opened to the outer stimulus gas injection extending portion 90B The coupled right channel change portion can be opened and extended between the 3 o'clock direction and the 12 o'clock direction. The left and right flow path changing portions may be formed in the same or similar shape as the outer stimulus gas injection extending portions 90A and 90B, respectively, and may be, for example, a plate having slits opened upward and downward therein.

Since the remaining configuration of the second embodiment is the same as the corresponding configuration of the first embodiment, a detailed description of the remaining configuration is omitted in the description of the first embodiment.

4A and 4B are a perspective view and a cross-sectional view showing a third embodiment of the ion source according to the present invention.

The third embodiment differs from the first embodiment in that the inner stimulating gas injection extension 30 and the outer stimulus gas injection extensions 90A and 90B, which combine the first and second embodiments, as shown in Figs. 4A and 4B, .

The inner stimulating gas injection extension 30 and the outer stimulation gas injection extensions 90A and 90B of the third embodiment are the same as the inner stimulus gas injection extension 30 of the first embodiment and the outer stimulus gas injection extension 30 of the second embodiment, 90A and 90B, the detailed description thereof is omitted in the description of the first and second embodiments, and the other configurations are the same as the corresponding configurations of the first and second embodiments, .

5A and 5B are a perspective view and a cross-section showing a fourth embodiment of the ion source according to the present invention.

As shown in Figs. 5A and 5B, the fourth embodiment is different from the first embodiment in that a plurality of tubes 35 having through-holes H35 passing through in the up and down direction, And forms an inner stimulating gas injection extension portion in such a manner as to be coupled to the upper surface of the inner magnetic pole 11. [

In the fourth embodiment, the inner stimulating gas inlet portion IN20 and the inner stimulating gas dispersing portion DIS20 constituting the inner stimulating gas injection portion 20 can be configured in the same manner as the corresponding configuration of the first embodiment, The stimulating gas spouting unit OUT20 may be structured to open upward only to the position of each tube 35 of the inner stimulating gas injection extension unit and seal the remaining area.

5A and 5B, the inner stimulating gas injection extension portion 35 has one opening at the front open end, but the structure of the front open end is not limited thereto. For example, the T-shaped flow path changing portion as described in the first embodiment may further be provided at the front open end of the inner stimulating gas injection extension portion 35. [ The passage changing portion may be formed in the same or similar shape as the inner stimulating gas injection extending portion 35, and may be a tube having through holes that are opened up and down, for example.

The rest of the configuration and operation of the fourth embodiment are the same as those of the first embodiment, and therefore the detailed description of the remaining configuration will be omitted from the description of the first embodiment.

6A and 6B are a perspective view and a cross-sectional view showing a fifth embodiment of the ion source according to the present invention.

The fifth embodiment is a multi-loop ion source in which two single loop ion sources are connected in parallel. The fifth embodiment can be configured to include the magnetic storage units 11 and 13, the gas injection unit 26, the gas injection extension unit 33, the electrodes 40A and 40B, and the like. Unlike the first embodiment, The positions of the gas injection unit 26 and the gas injection extension unit 33 are different from the voltage sources PS and PD applied to the electrodes 40A and 40B.

In the fifth embodiment, two gas injection portions 26 and a gas injection extension portion 33 are arranged in the center of a single loop, and the voltage sources PS and PD include a power supply PS and a power distributor PD . When the power supply PS outputs a DC voltage, the power distributor PD converts the voltage to a voltage of a pulse signal (uni-polar), and can apply alternating positive and negative voltages to each loop.

In a multi-loop ion source, when a uni-polar voltage is applied to the electrodes 40A and 40B of each loop, argon ions (Ar ⁺ ) are shifted to the central region between the loops by a voltage bias or the like, . Therefore, a desired effect can be obtained by injecting an evaporation gas ionized by argon ion (Ar ⁺ ) into the central region in front of the multi-loop ion source. Of course, it is not excluded to dispose the gas injection part and the gas injection extension part in the central stimulus of each loop.

In the fifth embodiment, when the power distributor PD applies a uni-polar voltage to the electrodes 40A and 40B, the electric field applied to the argon ions (Ar ⁺ ) repeats application and disconnection, The total size of the electric field applied to the (Ar ⁺ ) can be reduced. As a result, argon ions (Ar ^< ^{+ &} gt ^; ) collide less strongly on the substrate, thereby reducing surface damage of the substrate.

6A and 6B, the gas injection extension portion 33 is shown as having one opening at the front open end, but the structure of the front open end is not limited thereto. For example, the T-shaped flow path changing portion as described in the first embodiment can further be provided at the front open end of the gas injection extension portion 33. [ The flow path changing portion may be formed in the same or similar shape as the gas injection extending portion 33, and may be, for example, a plate having slits opened upward and downward therein.

7 shows a deposition apparatus having an ion source according to the present invention.

The deposition apparatus may include a process chamber 100, a carrier 200, a substrate 300, an ion source 400, a deposition gas injector 500, a process gas injector 600, and the like.

The process chamber 100 forms a closed interior space for thin film deposition. A vacuum pump is coupled to one side of the process chamber 100, and the vacuum pump can maintain the internal space at a predetermined process pressure. In the process chamber 100, a reactive gas or process gas and a process gas are injected according to the process. N ₂ , O ₂ , CH ₄ , CF ₄ , SiH ₄ and the like are used as the reaction or deposition gas, and argon, neon, helium and xenon are used as the process gas.

The carrier 200 supports the substrate 300 facing the ion source 400 and moves the substrate 300 in a predetermined direction.

The ion source 400 can use the ion source of the first to fifth embodiments described above.

The gas-introducing gas injector 500 may be used to process a gas such as O ₂ , N ₂ , or an evaporation gas such as CH ₃ COOH, CH ₄ , CF ₄ , SiH ₄ , NH ₃ , and TMA And supplies it into the chamber 100. The deposition gas injector 500 is connected to the gas injection section 20 and the gas injection extension section 30 of the ion source 400 and is placed in the process chamber 100 in front of the ion source 400 for reaction or vapor deposition Gas can be ejected.

The process gas injector 600 supplies a process gas such as Ar into the process chamber 100. The process gas injector 600 may be coupled to the side of the process chamber 100, but its position is not limited.

In the deposition apparatus having such a configuration, first, the ion source 400 ionizes the process gas injected from the process gas injector 600 to generate plasma ions. The ion source 400 may form a plasma region on one side of the opening by using an electric field and a magnetic field formed by the electrode 40 and the magnetic poles 11 and 13. The ion source 400 ionizes the process gas in the plasma region and moves the ionized plasma ions, for example argon ion (Ar ⁺ ), toward the substrate 300 by the electric field of the electrode 40. The moving argon ions (Ar ⁺ ) ionize the deposition gas to produce deposition ions, for example, silicon ions (Si ^4- ). Herein, the deposition gas is injected into the front central region of the ion source 400 through the gas injection unit 20 and the gas injection extension unit 30. The deposition ions migrate to the substrate 300 and are deposited on the substrate 300.

Although the present invention has been described based on various embodiments, it is intended to exemplify the present invention. Those skilled in the art will recognize that the technical idea of the present invention can be variously modified or modified based on the above embodiments. However, such variations and modifications may be construed to be included in the following claims.

10: magnetic tape 11: inner stimulus
13: outer magnetic pole 20: inner gas injection part
22, 24: outer gas injection part
30, 33, 35, 50, 60, 70, 80, 90A, 90B:
40, 40A, 40B: electrode CT: cooling tube
100: Process chamber 200: Carrier
300: substrate 400: ion source
500: Gas injector for reaction or vapor deposition
600: Process gas injector

Claims (13)

In the ion source,
An inner magnetic pole and an outer magnetic pole are spaced apart from each other to form an opening slit and a magnetic core is connected to the other side of the opening slit so that a plasma ignition and an electron acceleration region are formed in the opening slit Wherein the inner magnetic pole or the outer magnetic pole has a gas injecting portion which is opened in the direction of the object to be processed not in the direction of the opening slit or the inner space;
A gas injection extension part electrically insulated and coupled to the inner magnetic pole or the outer magnetic pole, communicated with the gas injection part, and protruding in the direction of the object to be processed;
And an electrode disposed at a lower portion of the open slit in the magnetic pocket interior space, the electrode being spaced apart from the magnetic pocket. 2. The apparatus of claim 1, wherein the gas injection extension
An electrical insulator, ion source 2. The apparatus of claim 1, wherein the gas injection extension
An electrically insulating member coupled to the inner magnetic pole or the outer magnetic pole and having a first penetrating portion communicating with the gas injecting portion;
And a piping member coupled to the electrical insulating member, the piping member having a second penetrating portion having one side communicating with the first penetrating portion and the other side opening toward the object to be processed. 4. The apparatus according to claim 3, wherein the pipe member
And a depressed portion in a boundary region with the electrically insulating member. 4. The electrical connector according to claim 3, wherein the electrically insulating member
And a depressed portion in a boundary region with the piping member or a boundary region with the inner or outer magnetic pole. 2. The apparatus of claim 1, wherein the gas injection extension
And a flow path changing portion at an end portion in the direction of the object to be processed. 7. The method according to any one of claims 1 to 6,
Wherein the plasma ignition and electron acceleration regions form a plurality of closed loops. 8. The method of claim 7,
Comprising a plurality of electrodes,
And a power divider that generates and applies a DC, AC, or pulse voltage to the plurality of electrodes. 7. The fuel cell system according to any one of claims 1 to 6,
A gas inflow portion through which gas flows from the outside;
A gas distributor communicating with the gas inlet and formed along the longitudinal direction of the inner magnetic pole or the outer magnetic pole and having a wider cross section than the gas inlet;
An ion source including a gas discharge portion having one side along the longitudinal direction of the inner magnetic pole or the outer magnetic pole communicating with the gas dispersion portion and the other side opened toward the object to be processed and having a smaller cross section than the gas dispersion portion. 10. The fuel cell system according to claim 9, wherein the gas-
An ion source comprising a plurality of apertures spaced from each other or connected to the slit. In the vapor deposition apparatus,
A process chamber;
And an inner magnetic pole and an outer magnetic pole are spaced apart from each other to form an opening slit and a magnetic core is connected to the other side to form a plasma ignition and an electron acceleration region in the opening slit Wherein the inner magnetic pole or the outer magnetic pole is electrically insulated from the inner magnetic pole or the outer magnetic pole and has a gas injection portion opened in the direction of the object to be processed not in the direction of the opening slit or the inner space, And an electrode disposed in a lower portion of the open slit in an inner space of the magnetic slot and spaced apart from the magnetic field, wherein the ion implantation electrode sauce;
A first gas injector injecting a reaction or deposition gas through the gas injection unit;
And a second gas injector for injecting a process gas into the process chamber. 12. The method of claim 11,
Wherein the plasma ignition and electron acceleration regions form a plurality of closed loops. 13. The method according to claim 11 or 12,
Comprising a plurality of electrodes,
And a power distributor for generating and applying a DC, AC, or pulse voltage to the plurality of electrodes.

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