KR101644913B1 - Semiconductor package by using ultrasonic welding and methods of fabricating the same - Google Patents

Abstract

There is provided a semiconductor chip including a contact metal layer on an upper surface thereof, a clip on which a lower surface is in contact with a metal layer portion of the semiconductor chip, and a lower portion and a metal layer portion of the clip are welded by ultrasonic welding And a package structure therefor.

Description

Technical Field [0001] The present invention relates to a semiconductor package using ultrasonic welding,

The present invention relates to semiconductor package technology, and more particularly, to a semiconductor package using ultrasonic welding and a manufacturing method thereof.

The semiconductor package may comprise a semiconductor chip or a die, a lead frame, and an encapsulant. A semiconductor chip or die is attached on a die pad of a lead frame and is electrically connected to a lead of the lead frame by a wire. Since an additional area is required for forming the metal wire, the size of the package increases and a gap for wire bonding to the bonding pads of the semiconductor chip is required, so that the overall height of the package can be increased.

In the case of a power chip package including a power semiconductor device such as a power MOSFET or an IGBT, a small switching loss and small conduction loss are attempted to be realized, and a low drain-source on-resistance ( Rds (ON)). These power-chip semiconductor packages can be used in devices such as switching mode power supplies, DC-DC converters, electronic ballasts for fluorescent lamps, inverters for motors, etc. By increasing the energy efficiency of these devices and reducing heat generation It is attempting to achieve resource savings by reducing the size of the final product. An increase in resistance caused by a wire contacting a terminal through which a large current flows, and deterioration in heat radiation characteristics due to a small heat capacity.

A problem to be solved by the present invention is to provide a semiconductor package using ultrasonic welding.

A problem to be solved by the present invention is to propose a method of manufacturing a semiconductor package using ultrasonic welding.

SUMMARY OF THE INVENTION The present invention is directed to a semiconductor package using ultrasonic welding capable of improving defects due to a defective bonding position due to melting state characteristics of an adhesive or a crack of an adhesive material. And a method for producing the same.

One aspect of the present invention provides a lead frame comprising: a lead frame including a first and a second metal layer, the lead frame including a pad portion and a lead portion spaced apart from each other; A semiconductor chip coupled to the pad portion and including a second metal layer on the top surface; A chip contact portion located on a portion of the second metal layer of the semiconductor chip, a extending portion extending outwardly from the chip contact portion, and a terminal portion extending outwardly from the connection extension portion, a clip comprising a terminal portion and a third metal layer; And a second metal layer formed on an interface between the chip contact portion and a portion of the second metal layer to couple the chip contact portion and the second metal layer, and a second metal element of the second metal layer and a third metal element of the chip contact portion And a first welding layer.

According to another aspect of the present invention, there is provided a semiconductor device comprising: a semiconductor chip including a contact metal layer on a top surface thereof; An encapsulant for encapsulating the semiconductor chip; A chip first contact portion located on a portion of the second metal layer of the semiconductor chip, a connecting first extending portion extending outwardly from the chip first contact portion, A first clip including a third metal layer and including a first terminal portion extending outwardly from the extension portion and extending to project outwardly from the sealing portion; And a second metal layer formed on an interface between the chip first contact portion and a portion of the second metal layer to couple the chip first contact portion and the second metal layer, And a first welding layer in which three metal elements are mixed.

The first weld layer may include an intermetallic compound of the second metal element of the second metal layer and the third metal element of the third metal layer.

The first metal element constituting the lead portion and the third metal element constituting the terminal portion are mixed with each other so that the first metal element and the third metal element constituting the lead portion are mixed with each other And a second welding layer.

The connection extension portion may include a recessed groove structure portion that is opposed to a corner portion of the semiconductor chip on a lower surface portion opposed to the semiconductor chip.

A package substrate comprising a contact fourth metal layer to which the semiconductor chip is coupled; A chip contact portion positioned on a portion of the fourth metal layer of the package substrate, a connecting second extending portion extending outwardly from the second contacting portion, A second clip including a fifth metal layer, the second clip including a second terminal portion extending outwardly from the sealing portion and extending to protrude outside the sealing portion; And a fourth metal layer formed on the fourth metal layer, and a second metal layer formed on the fourth metal layer and the fourth metal layer, And a second welding layer in which the first metal layer and the second metal layer are mixed.

The package substrate may include a ceramic material.

Another aspect of the present invention provides a method of manufacturing a semiconductor device, comprising: providing a lead frame including a first metal layer, the first lead comprising a pad portion and a lead portion spaced apart from each other; Coupling a semiconductor chip including a second metal layer on the upper surface on the pad portion; A chip contact portion located on a portion of the second metal layer of the semiconductor chip, a extending portion extending outwardly from the chip contact portion, and a terminal portion extending outwardly from the connection extension portion, providing a clip comprising a terminal portion and a third metal layer; And ultrasonic welding the interface between the chip contact portion and a portion of the second metal layer to fasten the chip contact portion and the second metal layer and to bond the second metal element of the second metal layer and the third metal layer of the chip contact portion And forming a first welding layer in which the metal elements are mixed.

The first metal element and the third metal element constituting the terminal portion of the first metal layer constituting the lead portion are bonded to each other at the interface between the terminal portion and the lead portion of the clip by the ultrasonic welding A mixed second welding layer can be formed.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: providing a semiconductor chip including a contact second metal layer on an upper surface thereof; Forming an encapsulant for encapsulating the semiconductor chip; A chip first contact portion positioned on a portion of the second metal layer of the semiconductor chip prior to forming the encapsulation portion; a connecting first extending portion extending outwardly from the chip first contact portion; And a first terminal portion extending outwardly from the connection first extension portion and extending to protrude outwardly from the sealing portion, the first clip including a third metal layer; And ultrasonic welding an interface between the chip first contact portion and a portion of the second metal layer to fasten the chip first contact portion and the second metal layer, and to bond the second metal element and the chip And forming a first welding layer in which a third metal element of the first contact portion is mixed.

Coupling the semiconductor chip to a package substrate comprising a contact fourth metal layer; A second contact portion located on a portion of the fourth metal layer of the package substrate, a connecting second extending portion extending outwardly from the second contacting portion, and a second connecting portion extending from the connecting second extending portion Providing a second clip including a fifth metal layer including a second terminal portion extending outwardly and extending to project outwardly of the sealing portion; And ultrasonic welding to form an interface between the second contact portion and a portion of the fourth metal layer to fasten the second contact portion and the fourth metal layer, And forming a second welding layer in which a fifth metal element of the second contact portion is mixed.

Another aspect of the invention provides a method of manufacturing a semiconductor device, comprising: providing a semiconductor chip comprising a contact metal layer on an upper surface; Providing a clip in contact with a lower surface of the metal layer portion of the semiconductor chip; And welding the lower surface portion of the clip and the metal layer portion by ultrasonic welding.

According to the present invention, a semiconductor package using ultrasonic welding can be presented. According to the present invention, a method of manufacturing a semiconductor package using ultrasonic welding can be presented. According to the present invention, it is possible to eliminate the use of an adhesive material by using ultrasonic welding, and it is possible to prevent the bonding position defect due to the melting state characteristic of the adhesive or the crack of the adhesive material The present invention can provide a method of manufacturing a semiconductor package using ultrasonic welding that can improve defects caused by the ultrasonic welding.

In order to connect the clip with the semiconductor chip, a metal layer for fastening may be provided at a position opposite to the clip on the semiconductor chip, and the metal layer and the clip may be welded together by ultrasonic welding. The clip can be fastened by ultrasonic welding, and the use of an adhesive such as a solder for fastening can be eliminated. Since the use of the adhesive material is excluded, it is possible to prevent defects in which the bonding position is varied by the melting state characteristics of the adhesive material. The position of the clip may be changed due to the variation of the melting state of the adhesive, so that the bonding position may deviate from the designed position. However, since the clip is fastened by the ultrasonic welding, the positional variation can be substantially effectively prevented. Since the use of the adhesive is excluded, adhesive dotting or printing of the adhesive is omitted, and a process for curing the adhesive, followed by a subsequent cleaning process, can be omitted. For example, clip mounting, ultrasonic welding and encapsulation molding can reduce process steps. This reduction in the number of process steps can realize the effect of reducing the process cost.

1 and 2 are a plan view and a sectional view showing a semiconductor package using ultrasonic welding according to an example.
3 is a view illustrating a method of manufacturing a semiconductor package using ultrasonic welding according to an example.
4 is a cross-sectional view illustrating a semiconductor package using ultrasonic welding according to another example.
5 is a view for explaining a method of manufacturing a semiconductor package using ultrasonic welding according to another example.
FIG. 6 is a flowchart illustrating a method of manufacturing a semiconductor package using ultrasonic welding according to an exemplary embodiment of the present invention.

Embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the embodiments of the present invention may be modified into various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The embodiments of the present invention may be provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shape and the like of the elements in the drawings may be exaggerated to emphasize a clearer description. Meanwhile, in describing the present invention with reference to the accompanying drawings, the same or corresponding components may be denoted by the same reference numerals. In the description, the terms "first" and "second" are intended to distinguish the members and are not used to limit the members themselves or to denote a particular order. Further, the description that the substrate is located on the "upper" or lower side of the member means a relative positional relationship, and does not limit the specific case in which the member is directly contacted or another member is further introduced into the interface therebetween. It is also to be understood that the description of "connected" or "connected" to one component may be directly or indirectly electrically or mechanically connected to another component, Separate components may be interposed to form a connection relationship or a connection relationship. The semiconductor chip may refer to a form in which a semiconductor substrate on which electronic circuits are integrated is cut into chips.

The semiconductor package of the present invention introduces a clip-shaped structure into a connection member electrically connected to a semiconductor chip, which may be a power chip. A wireless package can be constructed using a clip structure instead of a wire as a connecting member. A clip attached to a semiconductor chip or a power chip and may have superior electrical and thermal performance over packages using electrical connections based on wires. The power chip or semiconductor package with clips need to be designed into the circuit boards of consumers, so that the circuit boards can have unique footprints and pin assignments.

FIG. 1 is a plan view showing a semiconductor package using ultrasonic welding according to one example, and FIG. 2 is a sectional view showing a shape along the cutting line A-A 'in FIG.

1 and 2, an exemplary semiconductor package 10 includes a lead frame 100 and a semiconductor chip 200, which may be a power chip substantially mounted thereon. A part of the lead frame 100 is a lead frame pad portion 101, and the semiconductor chip 200 can be mounted thereon. The semiconductor chip 200 is attached to the pad portion 101 by an adhesive layer 420 including a solder layer or an epoxy layer and the pad portion 101 is connected to a terminal of the semiconductor chip 200, For example, it may be electrically connected to a drain. The adhesive layer 420 may include a conductive adhesive such as a solder layer or may include an insulating adhesive of an epoxy component. The lead frame pad portion 101 may be used as a drain terminal connected to a drain of a power MOSFET (MOSFET) integrated in the semiconductor chip 200.

The lead frame 100 may have a lead portion 103 as another terminal mutually spaced apart from the pad portion 101 together with the pad portion 101. [ The lead portions 103 and the pad portions 101 of the lead frame 100 are spaced apart from each other and used as a part of a different electrical path. However, the entire lead frame 100 includes one first metal layer As shown in Fig. The first metal layer may comprise a copper (Cu) layer or a copper alloy in which the copper element is further alloyed with other metal elements or other elements. The first metal layer may be formed of a metal material capable of forming an intermetallic compound such as copper, aluminum (Al), nickel (Ni), or the like capable of being bonded to another metal layer on the copper layer, the copper alloy layer, A metal layer of nickel (Ni), gold (Au), lead (Pb), or an alloy containing them may be plated, vapor-deposited or coated.

A second metal layer 210 may be provided on the upper surface of the semiconductor chip 200 and a clip 300 may be provided on the second metal layer 210 so that one end of the clip may be in contact with the second metal layer 210. The second metal layer 210 may be introduced into a layer that is welded to a portion of the clip 300 by ultrasonic welding. The clip 300 may be formed of a plate-shaped conductive member of a third metal layer including a copper layer or a copper alloy layer, and the second metal layer 210 may be welded to the copper layer or the copper alloy layer by ultrasonic welding. (Al), nickel (Ni), gold (Au), lead (Pb), or a metal layer of an alloy containing them. The second metal layer 210 is formed of a metal element capable of forming a first welding layer 431 including a material capable of differentiating by ultrasonic welding, that is, an intermetallic compound, with a third metal layer constituting the clip 300 As shown in FIG.

The clip 300 includes a chip contact portion 310 positioned on a portion of the second metal layer 210 of the semiconductor chip 200 such that a lower surface portion thereof is in contact with the chip contact portion 310, An extension portion 330 and a connection portion including a connection portion 350 as a downset portion extending outwardly from the connection extension portion 330. [ The portion of the second metal layer 210 located on the upper surface of the semiconductor chip 200 to which the chip contact portion 310 of the clip 300 is connected is connected to a terminal through which a large current such as a source electrode of a MOSFET or a collector electrode of an IGBT flows Can operate.

The chip contact portion 310 of the clip 300 is connected to such a terminal and can be used as a passage through which a large current flows. 1, the chip contact portion 310 may be designed to have a larger area, for example, a portion having a greater area and width than the connection extension portion 330. [ Although not shown, a gate terminal may be further provided on the upper surface of the semiconductor chip 200. The plate-shaped clip 300 provides a larger contact area with the second metal layer 210 as compared to the wire bonding structure, thereby reducing the contact resistance, having a wider cross-sectional area and inducing a reduction in the on- have. In addition, the wide contact area can lead to a wider heat path from the semiconductor chip 200, and can induce a smooth heat dissipation effect.

A first welding layer 431 may be provided at the interface between the chip contact portion 310 of the clip 300 and the second metal layer 210. The first weld layer 431 may be formed by ultrasonic welding and may include third metal elements provided from the third metal layer constituting the chip contact portion 310 and second metal elements provided from the second metal layer 210, And a layer in which metal elements are mixed. For example, the first welding layer 431 may be formed of a layer containing an intermetallic compound including a second metal element of the second metal layer 210 and a third metal element of the third metal layer. When the material of the clip 300 is different from the material of the second metal layer 210, the first welding layer 431 may be a heterogeneous bonding layer containing an intermetallic compound. Alternatively, when the material of the clip 300 and the material of the second metal layer 210 are the same, the first welding layer 431 may be formed of a layer in which the hetero-junction layer containing an intermetallic compound is not induced, As shown in FIG.

Ultrasonic welding for guiding the first welding layer 431 is performed by applying an ultrasonic vibration of, for example, 10 kHz to 75 kHz or higher to the joining surface to induce the vibration frictional heat, and the joining surfaces are fused by the vibration frictional heat to form the first welding layer 431, Lt; / RTI > Since the first welding layer 431 is provided as a resultant bonding layer by ultrasonic welding, the use of an adhesive such as solder or epoxy can be eliminated. Since the use of the adhesive material is excluded, it is possible to prevent defects in which the bonding position is varied by the melting state characteristics of the adhesive material. The position of the clip may be changed due to the variation of the melting state of the adhesive, so that the bonding position may deviate from the designed position. However, since the clip is fastened by the ultrasonic welding, the positional variation can be substantially effectively prevented. Since the use of the adhesive is excluded, the adhesive dotting or printing of the adhesive is omitted, and the process for curing the adhesive, followed by the subsequent cleaning process, can be omitted. For example, clip mounting, ultrasonic welding and encapsulation molding can reduce process steps. This reduction in the number of process steps can realize the effect of reducing the process cost.

1 and 2, the connection extension portion 330 extending from the chip contact portion 310 of the clip 300 extends the clip 300 to an outer region other than the region overlapping the semiconductor chip 200 . The end extending from the connection extension part 330 may serve as the connection terminal part 350 and the connection terminal part 350 may serve to connect the clip 300 to another device or member. The connection terminal portion 350 of the clip 300 may be bent at a predetermined angle from the chip contact portion 310 or the connection extension portion 330 so as to be bent or downsized. An end portion of the connection terminal portion 350 of the clip 300 may be provided on the lead portion 103 and contact the surface of the lead portion 103, for example. At this time, the shape of the clip 300 may be designed so that the lower surface of the end portion of the connection terminal portion 350 contacts the upper surface of the lead portion 103.

The second welding layer 435 may be provided at the interface between the lower surface of the end portion of the connection terminal portion 350 of the clip 300 and the upper surface of the lead portion 103. The first welding layer 435 may be formed by ultrasonic welding and may be formed from a first metal layer constituting the lead portion 103 and third metal elements provided from the third metal layer constituting the connection terminal portion 350 The first metal elements may be mixed with the first metal elements. For example, the second welding layer 435 may be formed of a layer containing an intermetallic compound including a first metal element of the first metal layer and a third metal element of the third metal layer. When the material of the clip 300 and the material of the first metal layer of the lead portion 103 are different, the second welding layer 435 may be provided as a heterojunction layer containing an intermetallic compound. Alternatively, when the material of the clip 300 is the same as the material of the first metal layer, the second welding layer 435 may be formed of a layer in which the same kind of metals are fusion-bonded without introducing the hetero-bonding layer.

When the connection terminal portion 350 down-set to the bending portion bent at a predetermined angle from the bottom surface of the connection extension portion 330 of the clip 300 is set, The connection terminal portion 350 may be formed such that the surface thereof is bent at a predetermined angle from the surface of the upper surface. At this time, the connection terminal portion 350 may be formed by bending at a substantially right angle with respect to the connection extension portion 330.

A concave groove structure 335 may be provided on the lower surface of the connection extension part 330 facing the semiconductor chip 200 so as to be opposed to the edge part 201 of the semiconductor chip. The concave groove structure 335 may be provided such that the lower surface of the connection extension portion 330 is spaced apart from the edge portion 201 of the semiconductor chip 200 by a greater distance. The connection extension portion 300 of the clip 300 can be further separated from the edge portion 201 of the semiconductor chip 200 by the concave depth of the groove structure portion 335. [

The corner portion 201 of the semiconductor chip 200 as a power element may be a weak point where leakage current can easily be induced. The path of the leakage current may be undesirably configured if the edge portion 201 and the clip 300 are undesirably contacted as the case may be. In order to more reliably prevent the contact between the edge portion 201 of the semiconductor chip 200 and the clip 300 and to prevent a leakage current, the corner portion 201 is correspondingly provided And a groove structure portion 335 for guiding the step on the lower surface of the facing connection extension portion 330. The clip 300 may be made of a metal material including copper and may be formed by processing a plate material having a thickness of 0.1 mm to 1.5 mm.

The semiconductor package 10 may further include an encapsulant 500 for sealing and sealing the semiconductor chip 200. The encapsulant 500 covers and protects the semiconductor chip 200 and the clip 300 . The encapsulant 500 may be formed by a molding process using an epoxy molding material (EMC). The sealing portion 500 is formed so as to expose the lower surface of the lead frame 100, so that the heat releasing effect can be further enhanced.

3 shows a method of manufacturing a semiconductor package using ultrasonic welding.

Referring to FIG. 3, the semiconductor package 10 may be manufactured by fusing the clip 300 with the second metal layer 210 of the semiconductor chip 200 using ultrasonic welding. A lead frame 100 including a first metal layer including a pad portion 101 and a lead portion 103 spaced apart from each other and a semiconductor chip 200 having a contact second metal layer 210 on a top surface thereof, Can be mounted on the pad portion 101 via the adhesive layer 420 and coupled.

A clip 300 including a chip contact portion 310, a connection extension portion 330 and a connection terminal portion 350 positioned on a part of the second metal layer 210 of the semiconductor chip 200 and including a third metal layer, Is provided on the semiconductor chip 200 and the interface between the chip contact portion 310 and a portion of the second metal layer 210 is ultrasonically welded to form a first weld layer 431 . A second welding layer (435 in FIG. 2) is formed by ultrasonic welding the interface between the connection terminal portion 350 and the lead portion 103 so that the semiconductor chip 200 and the lead portion 103 To be connected. Thereafter, the semiconductor package (10 of FIG. 2) can be formed by performing a molding process for forming the sealing portion 500. [

4 is a view showing a semiconductor package using ultrasonic welding according to another example.

4, the semiconductor package 20 includes a package substrate 2100, a semiconductor chip 2200 that can be a power chip substantially mounted on the package substrate 2100, and an encapsulation unit 2500 that encapsulates the semiconductor chip 2200 . The package substrate 2100 may be a substrate made of an insulating material such as a ceramic material. On the package substrate 2100, a contact fourth metal layer 2110 may be provided as an electrically connecting wiring circuit pattern. A sixth metal layer 2130 may be provided on the lower surface of the package substrate 2100 opposite to the fourth metal layer 2110. The fourth and sixth metal layers 2110 and 2130 may comprise a copper (Cu) layer or a copper alloy in which the copper element is further alloyed with other metal elements or other elements. The fourth metal layer may be formed of a metal material capable of forming an intermetallic compound such as copper, aluminum (Al), nickel (Ni), or the like, which is capable of being bonded to another metal layer on a copper layer, a copper alloy layer, A metal layer of nickel (Ni), gold (Au), lead (Pb), or an alloy containing them may be plated, vapor-deposited or coated.

The semiconductor chip 2200 is attached to the fourth metal layer 2110 of the package substrate 2100 by an adhesive layer 2420 including a solder layer or an epoxy layer and the fourth metal layer 2110 is attached to the semiconductor chip For example, a drain of the memory cell array 2200. The adhesive layer 2420 may include a conductive adhesive such as a solder layer or may include an insulating adhesive of an epoxy component. The fourth metal layer 2110 may have a portion extending outside the outer side of the semiconductor chip 2200.

A second metal layer 2210 may be provided on the upper surface of the semiconductor chip 2200 and a first clip 2300 may be provided on the second metal layer 2210 so that one end of the semiconductor chip 2200 may be contacted. The first clip 2300 may be provided to serve as a lead frame. The second metal layer 2210 may be introduced into the layer to be welded with a part of the first clip 2300 by ultrasonic welding. The first clip 2300 may be formed of a plate-shaped conductive member of a third metal layer including a copper layer or a copper alloy layer, and the second metal layer 2210 may be formed by welding with a copper layer or a copper alloy layer by ultrasonic welding (Al), nickel (Ni), gold (Au), lead (Pb), or a metal layer of an alloy containing them. The second metal layer 2210 is formed of a metal capable of forming a first welding layer 2431 including a substance capable of being differentially bonded to the third metal layer constituting the first clip 2300 by ultrasonic welding, Element may be provided.

The first clip 2300 includes a chip first contact portion 2310 positioned on a portion of the second metal layer 2210 of the semiconductor chip 2200 such that a lower surface portion thereof is in contact with the chip first contact portion 2310, And a connection first terminal portion 2350 as a downset portion extending outwardly from the connection first extension portion 2330. The connection first extension portion 2330 may be formed of a conductive material. The connection first terminal portion 2350 may be designed as an external connection terminal or an external connection lead portion which protrudes to the outside of the sealing portion 2500 and is connected to another external device.

The portion of the second metal layer 2210 located on the upper surface of the semiconductor chip 2200 to which the chip first contact portion 2310 of the first clip 2300 is connected is connected to the source electrode of the MOSFET or the collector electrode of the IGBT, As shown in Fig. The chip first contact portion 2310 of the first clip 2300 is connected to such a terminal and can be used as a passage through which a large current flows.

A first welding layer 2431 may be provided at an interface between the chip contact portion 2310 of the first clip 2300 and the second metal layer 2210. The first weld layer 2431 may be formed by ultrasonic welding and may be provided from third metal elements provided from the third metal layer constituting the chip first contact portion 2310 and from the second metal layer 2210 And a layer in which the second metal elements are mixed. For example, the first weld layer 2431 may be formed of a layer containing an intermetallic compound including a second metal element of the second metal layer 2210 and a third metal element of the third metal layer. When the material of the first clip 2300 and the material of the second metal layer 2210 are different, the first welding layer 2431 may be provided as a heterojunction layer containing an intermetallic compound. Alternatively, when the material of the first clip 2300 and the material of the second metal layer 2210 are the same, the first welding layer 2431 may be formed by melting the same metals without inducing a heterojunction layer containing an intermetallic compound As shown in FIG.

Ultrasonic welding for guiding the first welding layer 2431 is performed by applying ultrasonic vibration of, for example, 10 kHz to 75 kHz or more to the bonding surface to induce the vibration frictional heat so that the bonding surfaces are fused by the vibration frictional heat to form the first welding layer 2431, Lt; / RTI > Since the first weld layer 2431 is provided as a resultant bonding layer by ultrasonic welding, the use of an adhesive such as solder or epoxy can be eliminated. Since the use of the adhesive material is excluded, it is possible to prevent defects in which the bonding position is varied by the melting state characteristics of the adhesive material. The position of the clip may be changed due to the variation of the melting state of the adhesive, so that the bonding position may deviate from the designed position. However, since the clip is fastened by the ultrasonic welding, the positional variation can be substantially effectively prevented. Since the use of the adhesive is excluded, the adhesive dotting or printing of the adhesive is omitted, and the process for curing the adhesive, followed by the subsequent cleaning process, can be omitted. For example, clip mounting, ultrasonic welding and encapsulation molding can reduce process steps. This reduction in the number of process steps can realize the effect of reducing the process cost.

The connection first extension portion 2330 extending from the chip contact portion 2310 of the first clip 2300 serves to extend the first clip 2300 to an outer region other than the region overlapping the semiconductor chip 2200 Is designed. An end extending from the connection first extension portion 2330 may serve as a connection first terminal portion 2350 and the connection first terminal portion 2350 may include an outer lead 2350 connecting the first clip 2300 to another device or member, can serve as an out lead. The connection first terminal portion 2350 of the first clip 2300 may be bent at a predetermined angle bending outside the side surface of the sealing portion 2500.

A concave groove structure 2335 may be provided on the lower surface of the connection first extension portion 2330 opposite to the semiconductor chip 2200 so as to face the edge portion 2201 of the semiconductor chip.

The second clip 3300 can be electrically connected to an exposed part of the contact fourth metal layer 2110 to which the semiconductor chip 2200 is coupled. The second clip 3300 includes a second contact portion 3310 positioned on an exposed portion of the fourth metal layer 2110, a connection second extension portion 3330 extending outward from the second contact portion 3310, And a connection second terminal portion 3350 extending outward from the connection second extension portion 3330 and extending to protrude outward from the sealing portion 2500, and may include a fifth metal layer. The second clip 3300 may be provided in the form of a lead frame, and may be formed of a plate-shaped conductive member of a fifth metal layer including a copper layer or a copper alloy layer.

A second welding layer 3431 may be provided at the interface between the second contact portion 3310 of the second clip 3300 and a portion of the fourth metal layer 2110 by ultrasonic welding. The second welding layer 3431 is formed by joining the second contact portion 3310 and the fourth metal layer 2110 and by mixing the fourth metal element of the fourth metal layer 2110 and the fifth metal element of the second contact portion 3310 Or the like.

5 shows a method of manufacturing a semiconductor package using ultrasonic welding.

5, the semiconductor package 20 is manufactured by fusing the first clip 2300 to the second metal layer 2210 portion of the semiconductor chip 2200 using ultrasonic welding, and further, by using ultrasonic welding, The clip 3300 can be manufactured by fusing the clip 3300 to the fourth metal layer 2110 of the package substrate 2100. The semiconductor chip 2200 is mounted on the package substrate 2100 having the fourth metal layer 2110 and coupled thereto.

A chip first contact portion 2310 located on a portion of the second metal layer 2210 of the semiconductor chip 2200, a connection first extension portion 2330, and a connection first terminal portion 2350, And the interface between the first contact portion 2310 and a portion of the second metal layer 2210 is subjected to ultrasonic welding to form a first clip 2300 on the semiconductor chip 2200, (2431 in Fig. 4). The second contact portion 3310, the second extension portion 3330, and the third contact portion 3310 are formed on the upper surface of the fourth metal layer 2110 of the package substrate 2100 so that the second contact portion 3310 of the second clip 3300 is positioned. And a second terminal portion 3350. The second clip 3300 includes a first terminal portion 3350 and a second terminal portion 3350. The interface between the second contact portion 3310 and the fourth metal layer 2210 is ultrasonically welded to form a second welding layer 3431 shown in FIG. 4 so that the first clip 2300 and the second clip 3300 are bonded to the semiconductor chip The semiconductor package (20 of FIG. 4) having a structure in which the external terminals such as the first terminal portion 2350 and the second terminal portion 3350 are exposed to the outside of the sealing portion 2500 are formed can do.

6 is a process flow diagram illustrating a method of manufacturing a semiconductor package using ultrasonic welding.

Referring to Fig. 6, a semiconductor package (10 in Fig. 2 or 20 in Fig. 4) includes a semiconductor chip (210 in Fig. 2 or 2200 in Fig. 4) (Fig. 6). After providing a clip (300 in Fig. 2 or 2300 and 3300 in Fig. 4) in contact with the metal layer portion of the semiconductor chip (4020 in Fig. 6) And the metal layer portion are welded and welded together by ultrasonic welding (4030 in FIG. 6), and then the sealing portion is molded.

In this semiconductor package manufacturing process, since the clip and the semiconductor chip are connected by ultrasonic welding, it is not necessary to introduce a separate adhesive or solder to connect the clip and the semiconductor chip. Since the use of the adhesive is excluded, the adhesive dotting or printing process of the adhesive can be omitted. Also, an annealing process for curing the epoxy or solder introduced into the adhesive may be omitted, and the subsequent cleaning process may be omitted. Thus, the semiconductor package fabrication process may consist of simplified process steps, such as clip mounting, ultrasonic welding, and encapsulation molding. Thus, the intermediate process steps are omitted, and the semiconductor package can be manufactured with relatively simple process steps, thereby reducing the process cost and improving the package reliability.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Various other modifications will be possible as long as the technical ideas proposed in the present invention are reflected.

200: semiconductor chip,
300: clip,
431: Welding layer by ultrasonic welding.

Claims (12)

delete delete delete delete delete A semiconductor chip including a first metal layer on an upper surface thereof;
An encapsulant for encapsulating the semiconductor chip;
A chip first contact portion located on a portion of the first metal layer of the semiconductor chip, a connecting first extending portion extending outwardly from the chip first contact portion, A first clip comprising a second metal layer and including a first terminal portion extending outwardly from the extension portion and extending to project outwardly from the sealing portion;
The first metal layer and the chip first contact portion of the first metal layer, the chip first contact portion and the first metal layer being formed at an interface between the chip first contact portion and a portion of the first metal layer, A first welding layer in which a second metal element of the second metal layer is mixed;
A package substrate comprising a contact third metal layer to which the semiconductor chip is coupled;
A chip contact portion positioned on a portion of the third metal layer of the package substrate, a connecting second extending portion extending outwardly from the second contacting portion, And a second terminal portion extending outwardly from the sealing portion and extending to protrude outward from the sealing portion, the second clip comprising a fourth metal layer; And
The second contact portion and the third metal layer are formed on an interface between the second contact portion and a part of the third metal layer to fasten the second contact portion and the third metal layer and the fourth metal layer and the fourth metal layer, And a second welding layer in which the fourth metal element is mixed. The method according to claim 6,
The package substrate
A semiconductor package comprising a ceramic material. delete delete delete Providing a semiconductor chip comprising a first metal layer on an upper surface thereof;
Forming an encapsulant for encapsulating the semiconductor chip;
A chip first contact portion positioned on a portion of the first metal layer of the semiconductor chip prior to forming the encapsulation portion; a connecting first extending portion extending outwardly from the chip first contact portion; And a first terminal portion extending outwardly from the connection first extension portion and extending to project outwardly from the sealing portion, the method comprising: providing a first clip comprising a second metal layer; And
An interface between the chip first contact portion and a portion of the first metal layer is ultrasonically welded to fasten the chip first contact portion and the first metal layer so that the first metal element of the first metal layer, Forming a first welding layer in which a second metal element of the second metal layer as a contact portion is mixed;
Coupling the semiconductor chip to a package substrate comprising a contact third metal layer;
A second contact portion located on a portion of the third metal layer of the package substrate, a connecting second extending portion extending outwardly from the second contacting portion, and a second connecting portion extending from the connecting second extending portion Providing a second clip of a fourth metal layer including a second terminal portion extending outwardly and extending to project outwardly of the sealing portion; And
The second contact portion and the third metal layer are formed at the interface between the second contact portion and a portion of the third metal layer by the ultrasonic welding to fasten the second contact portion and the third metal layer, And forming a second welding layer in which a fourth metal element of the fourth metal layer constituting the second contact is mixed.

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