KR101620762B1 - 고순도 구리 망간 합금 스퍼터링 타깃 - Google Patents
고순도 구리 망간 합금 스퍼터링 타깃 Download PDFInfo
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- KR101620762B1 KR101620762B1 KR1020147006902A KR20147006902A KR101620762B1 KR 101620762 B1 KR101620762 B1 KR 101620762B1 KR 1020147006902 A KR1020147006902 A KR 1020147006902A KR 20147006902 A KR20147006902 A KR 20147006902A KR 101620762 B1 KR101620762 B1 KR 101620762B1
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- diameter
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- 229910000914 Mn alloy Inorganic materials 0.000 title abstract description 59
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 title abstract description 59
- 238000005477 sputtering target Methods 0.000 title abstract description 27
- 239000000654 additive Substances 0.000 claims abstract description 67
- 230000000996 additive effect Effects 0.000 claims abstract description 67
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 46
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 45
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000011572 manganese Substances 0.000 abstract description 144
- 239000010949 copper Substances 0.000 abstract description 131
- 239000002245 particle Substances 0.000 abstract description 122
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 89
- 229910052802 copper Inorganic materials 0.000 abstract description 89
- 238000004544 sputter deposition Methods 0.000 abstract description 44
- 229910052748 manganese Inorganic materials 0.000 abstract description 35
- 238000004519 manufacturing process Methods 0.000 abstract description 34
- 239000012535 impurity Substances 0.000 abstract description 29
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000005520 cutting process Methods 0.000 description 59
- 238000011156 evaluation Methods 0.000 description 52
- 239000010409 thin film Substances 0.000 description 51
- 235000012431 wafers Nutrition 0.000 description 50
- 230000000052 comparative effect Effects 0.000 description 45
- 239000010408 film Substances 0.000 description 38
- 239000013077 target material Substances 0.000 description 35
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 28
- 229910052799 carbon Inorganic materials 0.000 description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 27
- 238000005242 forging Methods 0.000 description 26
- 230000009467 reduction Effects 0.000 description 25
- 229910000831 Steel Inorganic materials 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 24
- 238000013441 quality evaluation Methods 0.000 description 24
- 239000010959 steel Substances 0.000 description 24
- 239000002344 surface layer Substances 0.000 description 24
- 238000005498 polishing Methods 0.000 description 16
- 239000006061 abrasive grain Substances 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 11
- 229910000881 Cu alloy Inorganic materials 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229910017566 Cu-Mn Inorganic materials 0.000 description 3
- 229910017871 Cu—Mn Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002250 progressing effect Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (3)
- Mn 0.05 ∼ 20 wt% 를 함유하고, 첨가 원소를 제외하고, 잔부가 Cu 및 불가피적 불순물인 고순도 구리 망간 합금 스퍼터링 타깃으로서, 그 타깃은 필수 첨가 원소로, P : 0.001 ∼ 0.06 wtppm, S : 0.005 ∼ 5 wtppm, Ca : 0.001 ∼ 13 wtppm, Si : 0.001 ∼ 7 wtppm 을 함유하고, P, S, Ca, Si 의 합계량이 0.01 ∼ 20 wtppm 인 것을 특징으로 하는 고순도 구리 망간 합금 스퍼터링 타깃.
- 제 1 항에 있어서,
P, S, Ca, Si 의 합계량이 0.1 ∼ 15 wtppm 인 것을 특징으로 하는 고순도 구리 망간 합금 스퍼터링 타깃. - 제 1 항에 있어서,
P, S, Ca, Si 의 합계량이 1 ∼ 10 wtppm 인 것을 특징으로 하는 고순도 구리 망간 합금 스퍼터링 타깃.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2012-011235 | 2012-01-23 | ||
JP2012011235 | 2012-01-23 | ||
PCT/JP2013/050002 WO2013111609A1 (ja) | 2012-01-23 | 2013-01-04 | 高純度銅マンガン合金スパッタリングターゲット |
Publications (2)
Publication Number | Publication Date |
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KR20140054260A KR20140054260A (ko) | 2014-05-08 |
KR101620762B1 true KR101620762B1 (ko) | 2016-05-12 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020147006902A KR101620762B1 (ko) | 2012-01-23 | 2013-01-04 | 고순도 구리 망간 합금 스퍼터링 타깃 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9165750B2 (ko) |
EP (1) | EP2808419B1 (ko) |
JP (1) | JP5635188B2 (ko) |
KR (1) | KR101620762B1 (ko) |
CN (1) | CN104066868B (ko) |
IL (1) | IL231041A (ko) |
SG (1) | SG2014013916A (ko) |
TW (1) | TWI544096B (ko) |
WO (1) | WO2013111609A1 (ko) |
Families Citing this family (11)
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WO2013038983A1 (ja) | 2011-09-14 | 2013-03-21 | Jx日鉱日石金属株式会社 | 高純度銅マンガン合金スパッタリングターゲット |
KR20140029532A (ko) | 2011-09-30 | 2014-03-10 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타깃 및 그 제조 방법 |
WO2014136673A1 (ja) | 2013-03-07 | 2014-09-12 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット |
US20160002749A1 (en) * | 2013-10-25 | 2016-01-07 | Jx Nippon Mining & Metals Corporation | Method for manufacturing high purity manganese and high purity manganese |
KR101678334B1 (ko) * | 2013-10-25 | 2016-11-21 | 제이엑스금속주식회사 | 고순도 망간의 제조 방법 |
JP5850077B2 (ja) * | 2014-04-09 | 2016-02-03 | 三菱マテリアル株式会社 | Ag合金膜及びAg合金膜形成用スパッタリングターゲット |
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JP6299802B2 (ja) * | 2016-04-06 | 2018-03-28 | 三菱マテリアル株式会社 | 超伝導安定化材、超伝導線及び超伝導コイル |
TWI663274B (zh) * | 2017-03-30 | 2019-06-21 | 日商Jx金屬股份有限公司 | Sputtering target and manufacturing method thereof |
US10760156B2 (en) * | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
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2013
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Patent Citations (3)
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JP2007051351A (ja) | 2005-08-19 | 2007-03-01 | Mitsubishi Materials Corp | パーティクル発生の少ないMn含有銅合金スパッタリングターゲット |
JP2010053445A (ja) | 2008-08-01 | 2010-03-11 | Mitsubishi Materials Corp | フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット |
JP7109016B2 (ja) * | 2018-02-21 | 2022-07-29 | 国立大学法人富山大学 | アンテナ装置 |
Also Published As
Publication number | Publication date |
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EP2808419B1 (en) | 2016-08-31 |
TWI544096B (zh) | 2016-08-01 |
JP5635188B2 (ja) | 2014-12-03 |
US9165750B2 (en) | 2015-10-20 |
SG2014013916A (en) | 2014-07-30 |
TW201348470A (zh) | 2013-12-01 |
US20140284211A1 (en) | 2014-09-25 |
CN104066868B (zh) | 2016-09-28 |
WO2013111609A1 (ja) | 2013-08-01 |
KR20140054260A (ko) | 2014-05-08 |
IL231041A0 (en) | 2014-03-31 |
JPWO2013111609A1 (ja) | 2015-05-11 |
EP2808419A4 (en) | 2015-03-18 |
CN104066868A (zh) | 2014-09-24 |
EP2808419A1 (en) | 2014-12-03 |
IL231041A (en) | 2017-05-29 |
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