KR101581376B1 - Apparatus For Analyzing substrate Contamination And Method For Analyzing Wafer Contamination using the same - Google Patents
Apparatus For Analyzing substrate Contamination And Method For Analyzing Wafer Contamination using the same Download PDFInfo
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- KR101581376B1 KR101581376B1 KR1020140109825A KR20140109825A KR101581376B1 KR 101581376 B1 KR101581376 B1 KR 101581376B1 KR 1020140109825 A KR1020140109825 A KR 1020140109825A KR 20140109825 A KR20140109825 A KR 20140109825A KR 101581376 B1 KR101581376 B1 KR 101581376B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
Description
The present invention relates to a substrate contamination analyzer and a method for analyzing contaminants using the same, and more particularly, to a substrate contamination analyzer for effectively collecting and detecting contaminants on a surface of a substrate and a method for analyzing contaminants using the same.
As semiconductor devices become highly integrated, various contaminants generated in the semiconductor manufacturing line and the manufacturing process are adsorbed on the surface of the substrate, thereby affecting the performance and yield of semiconductor devices.
Accordingly, in order to solve this problem, conventionally, a predetermined substrate is selected between each semiconductor manufacturing line and each manufacturing process, and then the surface of the selected substrate is scanned Contaminant samples were collected for analyzing contaminants on the surface of the substrate and analyzed by destructive analysis such as atomic absorption spectroscopy and ICP-mass spectroscopy or total X-ray analysis fluorescent analyzer).
That is, conventionally, after a predetermined substrate is selected in each manufacturing line and each manufacturing process, an oxide film, which is coated on the substrate surface, is first removed This is accomplished by a vapor phase decomposition apparatus in which a gas phase decomposition apparatus includes a process chamber in which a process is performed, a loading plate in which a substrate is loaded in a chamber, And a container containing hydrofluoric acid (HF) for decomposing an oxide film coated on the surface of the substrate. When the substrate is transferred to a loading plate installed in the process chamber, the substrate is placed in the process chamber for a predetermined time, So that the oxide film coated on the substrate surface is decomposed by the natural vaporized hydrofluoric acid vapor.
Thereafter, the user removes the substrate from the process chamber, drops the scanning solution onto the surface of the substrate, and the user directly scans the substrate surface with the scanning solution to manually remove the contaminant sample Respectively. A semiconductor substrate contaminant analyzing apparatus is known from Korean Patent No. 10-0383264. The pollutant collecting apparatus of the semiconductor substrate is composed of a central control unit which controls the entire process chamber, the transfer unit, the loader section, the gas phase decomposition unit, the scanning unit, the dry unit, the unloader section and the pollutant collecting apparatus as a whole.
At this time, the transfer unit, the loader unit, the gas phase decomposition unit, the scanning unit, the dry unit and the unloader unit are installed in the process chamber, and the transfer unit is set as a center, and the loader unit and the unloader unit It is installed in semicircular form. Here, the gas phase decomposition unit, the scanning unit and the dry unit are sequentially installed between the loader unit and the unloader unit.
When an arbitrary substrate is selected to analyze the degree of contamination of the substrate in the semiconductor manufacturing line and the manufacturing process, the user transfers the substrate to the loader section located in the process chamber of the contaminant collecting apparatus. Thereafter, when the user closes the process chamber and activates the pollutant collecting apparatus, the transferring unit transfers the substrate placed in the loader section to the loading plate of the gas phase decomposition unit, and the gas phase decomposition unit closes the substrate transferred to the loading plate Next, hydrofluoric acid vapor is used to decompose the oxide film coated on the substrate surface.
Subsequently, when the oxide film decomposition coated on the substrate surface is completed, the transfer unit again transfers the substrate placed in the vapor phase decomposition unit to the substrate-unevenness of the scanning unit. The scanning unit is rotated to the nozzle tray position to insert the nozzle provided in the nozzle tray, and then the scanning unit is moved to the center of the nozzle tray, In a solution bottle, a predetermined amount of the scanning solution is sucked and moved to the upper side of the substrate, and slowly approaches the center of the substrate.
Subsequently, when the substrate center and the nozzle inserted into the scanning unit are about to approach each other, the scanning unit stops approaching. When the access is stopped, the pump moves the part of the scanning solution sucked into the nozzle through the pumping channel of the scanning unit, So that the scanning liquid is agglomerated in the form of droplets between the lower end of the nozzle and the surface of the substrate.
Then, when the scanning liquid is agglomerated in the form of droplets at the lower end of the nozzle inserted into the scanning unit and contacts the surface of the substrate, the substrate is slowly polarized, and the substrate slowly rotates in one direction. The scanning unit moves the lower end of the nozzle, Slowly move the part in contact with the surface in one direction. At this time, the contaminants on the substrate surface are absorbed into the scanning solution as they come into contact with the scanning solution exposed to the outside.
In addition, when the scanning unit rotates once when the scanning unit moves once, and when the scanning unit moves again, the substrate scans the substrate by a step-by-step step by step again. Thus, when the scanning solution is not removed from the lower end of the nozzle and the scanning of the substrate is completed, the substrate misalignment stops rotating and the scanning unit also stops moving, and the pump stops scanning the substrate using the pumping flow path. All are sucked into the nozzle. Then, the scanning unit rotates to the sampling cup tray to discharge all of the contaminant samples that have been scanned in the sampling cup, and when the discharging is completed, the scanning unit rotates again so that the nozzles are positioned above the nozzle bottle, So that the nozzle inserted into the scanning unit is released from the scanning unit and falls to the nozzle bottle. Thereafter, the substrate is transferred to the unloader unit by the transfer unit, and at the same time, unloaded to the outside, the pollutant collecting process is terminated.
As described above, the scanning chemical used in the gas phase decomposition process and the scanning process of the pollutant collecting apparatus of the known semiconductor substrate may be toxic to the human body, but may remain on the surface of the substrate after the process proceeds There is no unit for removing the scanning solution, so that the substrate processing force may be exposed to the scanning solution.
In order to prevent this, there has been proposed a technique of cleaning and drying a substrate in a gas phase decomposition unit after a contaminant collecting process of a semiconductor substrate. However, since this method requires a gas phase decomposition process and a cleaning process in the same chamber, It may protrude and remain on the floor or the wall of the chamber. This problem may lead to cross contamination during the subsequent gas phase cracking process.
Further, when the gas-phase decomposition process and the cleaning process are performed in the same chamber, the gas-phase decomposition process must be performed after the cleaning process is completed, thereby increasing the process time for collecting contaminants in a plurality of wafers.
In addition, in the case of a conventional scan nozzle used for collecting contaminants on the surface of a substrate, if the surface of the substrate is a hydrophilic surface, a scanning solution flows to the substrate, which makes it impossible to recover the contamination. For example, hydrophilic surfaces such as polysilicon (poly-Si) and patterned wafers are more hydrophilic than the scanning nozzles (Teflon series), because the oxide film is much thicker than the natural oxide film and the scanning solution spreads thinly on the substrate surface, Lt; / RTI > In this case, the desired scanning can not be performed and the recovery of the chemical solution becomes difficult.
In addition, the conventional scanning nozzles are not suitable for analyzing impurities existing under the surface of the gypsum because the scanning solution does not have a structure in which the scanning solution is continuously supplied and discharged.
SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate contamination analyzer capable of independently performing a cleaning operation and a gas phase decomposition process independently of a work order by separately providing a gas phase decomposition unit and a cleaning unit.
In addition, a scan nozzle having three flow paths may be used to inspect impurities on the surface of the substrate or to provide an etchant to the scan nozzles to perform point etching of the substrate, and then to analyze impurities existing below the substrate surface of the etched portion And to provide a pollutant analysis apparatus and an analysis method thereof.
According to an aspect of the present invention, there is provided an apparatus for analyzing a substrate contaminant, comprising: a substrate transfer unit for transferring a substrate in a substrate contaminant analyzer; A gas-phase decomposition unit for performing a process, a scanning liquid supply unit for supplying a scanning liquid to a surface of a substrate placed on a scan stage, and scanning and collecting a surface of the substrate and contaminants existing thereunder using a substrate scan nozzle for collecting the provided scanning liquid A substrate scanning unit, a cleaning unit for cleaning and introducing the substrate on which contaminant scans and collecting are performed, and an analysis unit for analyzing contaminants from the scanning solution collected by the substrate scanning unit.
The substrate scan nozzle may include a nozzle cover connected to the scanning liquid supply line and the first vacuum line and fastened to an upper portion of the first nozzle unit, a vacuum channel coupled to the nozzle cover, and connected to the second vacuum line, A first nozzle unit including a first nozzle body having a first nozzle body and a first nozzle tip formed with a first flow path for supplying a scanning solution to a surface and sucking a scanning solution; A second nozzle body having a purge gas introduction passage formed therein and a second nozzle tip having a diameter for receiving the first nozzle tip, the first nozzle tip being fastened to the first nozzle body while receiving the first nozzle tip, A second nozzle part forming a second flow path between the second nozzle tip and the vacuum flow path; And a third channel forming a third flow path for allowing the purge gas introduced through the purge gas introduction flow path to flow along the outer peripheral surface of the second nozzle tip by being coupled to the second nozzle body while receiving the second nozzle tip, And a nozzle unit.
In one embodiment of the present invention, the gas phase decomposition unit includes a process chamber for providing a space in which a process chamber for removing an oxide film is provided, the process chamber including a top cover; A substrate stage disposed in the process chamber and supporting and rotating the substrate; And a gas injection unit connected to the upper cover of the process chamber and injecting the etching gas into the surface of the substrate.
In one embodiment of the present invention, the cleaning unit includes a top cover, a cleaning chamber for providing a space in which a process of cleaning and drying the front surface of the substrate is performed, and a contact sliding gate A spin chuck provided in the cleaning chamber for supporting and rotating the substrate, and a cleaning liquid supply unit for supplying a cleaning liquid or gas to the upper portion of the substrate while moving from the central portion to the outer side of the substrate rotated in the cleaning process, And a fluid ejecting portion for ejecting the fluid.
According to an embodiment of the present invention, the contact sliding gate may include a fixed contact portion formed at an entrance of the chamber and having an inclined face in a first direction, and a second contact portion which is vertically driven by the driving portion and corresponds to the inclined face of the fixed contact portion, And the sliding contact portion is raised by the driving portion when the entrance of the chamber is closed.
In one embodiment according to the present invention, the substrate scanning unit preferably includes one or two substrate scan nozzles.
According to another aspect of the present invention, there is provided a method for analyzing substrate surface contaminants, comprising: introducing a substrate to be analyzed into a substrate scanning unit through a transfer unit; Collecting contaminants present thereunder, providing and analyzing contaminants to the analysis unit through the substrate scan nozzles, and performing a step of cleaning and drying the substrate on which the scanning process has been performed in the cleaning unit .
In one embodiment of the present invention, the scanning and collecting of contaminants present on the surface of the substrate are connected to the scanning liquid supply line and the vacuum line, respectively, and are fastened to the upper portion of the first nozzle unit, A first nozzle unit coupled to the nozzle cover and including a first nozzle body having a vacuum hole formed therein and a first nozzle tip having a first flow path for supplying a vacuum or a scanning solution to the substrate; 1 nozzle body and a second nozzle tip having a diameter to receive the first nozzle tip, wherein the first nozzle tip and the second nozzle tip are fastened to the first nozzle body while surrounding the first nozzle tip, And a purge gas introduced through the purge gas introduction hole is connected to the second nozzle body through the second nozzle body while surrounding the second nozzle tip, And a third nozzle portion having a third flow path for allowing the nozzle to flow along the outer circumferential surface of the nozzle tip.
In one embodiment of the present invention, the scanning and analysis of the substrate surface contaminants comprises the steps of forming a purge gas barrier by supplying purge gas to the surface of the substrate through a third flow path of the substrate scan nozzles, Injecting purge gas flowing inwardly through a second flow path of the scan nozzle so that purge gas does not flow into the first flow path of the scan nozzles; Supplying the scanning solution to the analysis unit through the first flow path of the scan nozzle after the completion of the scan, supplying the scanning solution to the analysis unit through the first flow path of the scan nozzle, And the like.
In one embodiment according to the present invention, the scanning and analysis of contaminants below the surface of the substrate comprises supplying a purge gas to the surface of the substrate through the substrate scan nozzle to form a purge gas barrier, Supplying a predetermined amount of etching liquid to the surface of the substrate defined by the etching liquid supplied to the analysis unit, etching the lower surface of the substrate using the etchant supplied in a predetermined amount, supplying the etching liquid to the analysis unit through the suction channel of the scan nozzle, Forming a purge gas barrier, and supplying the etchant to the analysis unit at least once.
As an example, it is preferable that the substrate to be analyzed be introduced into the gas phase decomposition unit via a transfer unit before the substrate is introduced into the substrate scanning unit, etching the top of the substrate, and positioning the etched substrate on the scan stage .
In one embodiment according to the present invention, contaminant analysis below the substrate surface comprises supplying a purge gas to a surface of the substrate through a third flow path of the substrate scan nozzle to form a purge gas barrier, The method comprising the steps of: sucking a purge gas flowing inwardly through a second flow path of the scan nozzle so that gas does not enter the first flow path of the scan nozzle; Sequentially etching the surface of the substrate using a etchant supplied in a predetermined amount, and etching the etchant containing the contaminants used in the etching to a first flow path of the scan nozzle To an analytical unit.
The apparatus for analyzing substrate contaminants according to the present invention may further include a cleaning chamber for introducing a separate substrate into the substrate to remove the oxide film on the substrate in the vapor phase decomposition unit, thereby rapidly cleaning the substrate on which the scanning process is performed.
In addition, by using a substrate scan nozzle having a structure in which three flow paths are formed by inserting and arranging three nozzle portions composed of inner, middle, and outer portions, not only the surface of the substrate but also contaminants existing under the surface of the substrate (bulk silicon) Scanning and collecting can be performed to further improve the analytical sensitivity of the substrate contaminants.
Further, in the analysis method using the scan nozzle having the above-described structure, two kinds of scanning solutions can be supplied directly to the surface of the substrate or to the surface of the substrate using the scan nozzles formed with the respective flow paths, Can be directly provided to the analysis unit, thereby further improving the analytical sensitivity of the substrate contaminants.
1 is a plan view schematically showing an apparatus for analyzing substrate contaminants according to an embodiment of the present invention.
2 is a view showing a structure of a gas phase decomposition unit applied to an apparatus for analyzing substrate contaminants according to an embodiment of the present invention.
3 is a cross-sectional view illustrating the structure of a cleaning unit applied to an apparatus for analyzing substrate contaminants according to an embodiment of the present invention.
4 is a cross-sectional view illustrating the structure of a substrate scan nozzle applied to the substrate contamination analyzer according to an embodiment of the present invention.
5 is an exploded perspective view showing the substrate scan nozzle of FIG.
FIG. 6 is a schematic view illustrating fluid flow of scan nozzles applied to a substrate contaminant analyzing apparatus according to an embodiment of the present invention. Referring to FIG.
FIG. 7 is a block diagram illustrating a calibration sample introduction unit applied to an apparatus for analyzing substrate contaminants according to an embodiment of the present invention. Referring to FIG.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a substrate contamination analyzer according to an embodiment of the present invention and a method for analyzing contaminants using the same will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.
The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.
The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
Substrate contaminant analyzer
1 is a plan view schematically showing an apparatus for analyzing substrate contaminants according to an embodiment of the present invention.
Referring to FIG. 1, the apparatus for analyzing substrate contaminants according to the present invention includes an
As an example, the
The
The gas
The
The
The
Analysis of contaminants present on or below the surface of the substrate using the
The
2 is a view showing a structure of a gas phase decomposition unit applied to an apparatus for analyzing substrate contaminants according to an embodiment of the present invention.
2, the gas
The
The
Although not shown in the drawing, an etching gas discharging unit (not shown) is formed in the process chamber so that the etching gas existing therein can be discharged to the outside, thereby improving the work safety of the operator.
Also, although not shown in the drawings, the gas
A
The
The
3 is a cross-sectional view illustrating the structure of a cleaning unit applied to an apparatus for analyzing substrate contaminants according to an embodiment of the present invention.
Referring to FIG. 3, the
The cleaning chamber 310 accommodates the substrate stage and provides a space in which a cleaning and drying process is performed to remove the scanning solution remaining on the surface of the substrate subjected to the scanning process by receiving the cleaning liquid and the purge gas. The cleaning chamber 310 has a structure in which a transparent
For example, the contact
A
The
The
FIG. 4 is a cross-sectional view illustrating the structure of a substrate scan nozzle applied to the substrate contamination analyzer according to an embodiment of the present invention, and FIG. 5 is an exploded perspective view illustrating the substrate scan nozzle of FIG.
4 and 5, the
Specifically, the
The
In particular, in the scan nozzle of the present invention, the first nozzle unit is configured to solve the problem that the space for accommodating the solution is limited and limited when the amount of the scan solution needs to be changed, And has a structure capable of expanding the flexibility of solution supply, such as easy supply and change in volume of the supply solution. In addition, the first nozzle unit can improve the physical holding ability of the scan solution by the upper suction path (Vacuum 2). The vacuum in the upper suction line can be finely adjusted by diaphragm pump and valve control.
The
The
Specifically, the second flow path of the second nozzle portion sucks the purge gas to prevent the purge gas from being introduced into the first nozzle when forming the purge gas barrier. This allows the second flow path to have an upward flow of the purge gas while maximizing the holding effect of the scan solution contained in the first nozzle tip. That is, the loss of the scan solution contained in the first nozzle tip can be minimized in analyzing the substrate contaminants.
The
The substrate scan nozzle supplies a purge gas injected through the third flow path while surrounding the second nozzle tip, thereby limiting a range of the chemical spreading process during the scanning process or the point etching process of the substrate, The problem of flowing out can be prevented.
Particularly, since the substrate scan nozzle having the above-described structure is additionally provided with a predetermined amount of sample introduction portion including the metering pump and the sample loading portion, the scanning solution collected after the scanning process can be supplied to the analyzer at a constant flow rate.
FIG. 6 is a schematic view illustrating fluid flow of scan nozzles applied to a substrate contaminant analyzing apparatus according to an embodiment of the present invention. Referring to FIG.
Referring to FIG. 6, the flow of the fluid for scanning and analyzing the contaminants on the surface of the substrate using the substrate scan nozzle is firstly opened by opening the first valve (v1) and then by using the first metering pump (p1) The scanning solution contained in the container (A) is provided with a scanning nozzle. Then, the scan solution is supplied to the surface of the substrate via the first flow path of the scan nozzle by a predetermined amount. Thereafter, the scanning solution sample collected after the scanning solution sample is collected using the
As another example, the flow of the fluid for scanning and analyzing the contaminants beneath the surface of the substrate surface using the substrate scan nozzle will be described. First, the third valve (v3) is opened and then the first metering pump (p1) (B) is supplied to the substrate via the first flow path of the scan nozzle by a predetermined amount. The etchant sample collected through the
Although not shown, the
The sample
The standard
Examples of the first metering pump or the second metering pump include a syringe pump, a diaphragm pump, a gear pump, and a piston pump. As an example, the second sample loop may be included in the loading portion of the injection valve type.
The
Method for analyzing substrate surface contaminants
In order to analyze contaminants on the surface of the substrate according to an embodiment of the present invention, the substrate to be analyzed is first introduced into the gas phase decomposition unit using the transfer arm of the transfer unit. (Step S110) In this embodiment, Wafer.
Next, the wafer introduced into the gas-phase decomposition unit is etched by performing a gas-phase decomposition etching process (step S120)
In step S120, the etching of the wafer is performed using the gas phase decomposition unit shown in FIG. When the oxide film of the wafer is etched by gas phase decomposition, the
Next, the wafer on which the oxide film is etched is placed on the scan stage (S130)
In step S130, the wafer on which the oxide film is etched is discharged from the gas phase decomposition unit by the transfer arm of the substrate transfer unit, and is then placed on the substrate stage. The substrate mounted on the substrate stage is then rotated on the substrate stage in a process for scanning the substrate contaminants using the substrate scanning unit.
Subsequently, the scanning unit scans and collects contaminants present on the surface of the wafer (S140)
As an example, the process of scanning and collecting the wafer surface contaminants in step S140 may be performed by the following method. A purge gas is supplied to the surface of the wafer through a third flow path of a substrate scan nozzle included in the scanning unit to form a purge gas barrier. Then, the purge gas flowing inward through the second flow path of the scan nozzle is sucked so that the purge gas does not flow into the first flow path of the scan nozzle. Then, a scanning solution is supplied in a fixed amount to the surface of the wafer defined by the purge gas barrier through the first flow path of the substrate scan nozzle. Subsequently, by moving the scanning solution supplied in a fixed amount, contaminants present on the surface of the wafer can be scanned and collected.
Subsequently, the collected scanning solution is received, and the presence and content of contaminants are analyzed using an analyzer (S150)
Then, the wafer having been subjected to the substrate scanning and analysis process is cleaned and dried (S160). In step S160, the wafer is preferably cleaned and dried using the cleaning unit shown in FIG.
As an example, when the cleaning process of the substrate in the cleaning unit is performed, a separate substrate may be introduced into the vapor phase decomposition unit to perform the etching process, thereby further improving the processing speed of the analysis process.
Method of analyzing contaminants below substrate surface
The analysis of contaminants below the surface of the substrate according to another embodiment of the present invention can be performed by the following method.
First, the substrate to be analyzed is introduced into the scanning unit. In this embodiment, the substrate is a silicon wafer. Subsequently, the substrate scan nozzle of the present invention is placed on a wafer to be analyzed, and then a purge gas is supplied to the surface of the wafer through a third flow path of the substrate scan nozzle to form a purge gas barrier. Then, the purge gas flowing inward through the second flow path of the scan nozzle is sucked so that the purge gas does not flow into the first flow path of the scan nozzle. Subsequently, the etchant is continuously and quantitatively supplied to the surface of the substrate defined by the purge gas barrier through the first flow path of the substrate scan nozzle. Subsequently, etching is performed under the surface of the substrate using the etchant supplied continuously in a constant amount. At this time, the etchant containing impurities may be continuously supplied to the analysis unit through the first flow path of the scan nozzle to obtain a concentration profile of impurities existing under the substrate surface.
As an example, in order to analyze contaminants present below the surface of the wafer, the step of forming the purge gas barrier or the step of supplying the etchant containing the contaminants to the analyzing unit used in the etching is repeated at least twice To analyze contaminants along the substrate of the substrate.
The method of analyzing the surface of the substrate using the scan nozzle having the structure described above is a method of directly etching a specific point of the wafer regardless of whether the gas phase decomposition process is performed or not, ). That is, it is possible to repeatedly analyze the scan nozzle of the present invention while fixing the scan nozzle at a specific position of the substrate. When the concentration of silicon (Si) in the etchant introduced into the analysis unit is measured, The effect that can be obtained can be obtained.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.
100: Opener 200: Feed unit
300: gas phase decomposition unit 350: cleaning unit
400: Scan stage 500: Scanning unit
600: Analysis unit
Claims (12)
A gas phase decomposition unit that performs a process of etching an oxide film or a substrate surface of the transferred substrate;
A substrate scanning unit for scanning and collecting contaminants present on the surface of or below the substrate using a substrate scan nozzle having a structure in which three nozzle channels are formed by interposing three nozzle units composed of inner, middle, and outer portions;
A cleaning unit for cleaning and introducing a substrate on which contaminants are scanned and collected; And
An analysis unit for analyzing contaminants from the scanning solution captured by the substrate scanning unit,
The substrate scan nozzles
A nozzle cover connected to the scanning liquid supply line and the first vacuum line, respectively, and fastened to the upper portion of the first nozzle unit;
And a first nozzle body having a first nozzle body formed with a vacuum passage communicating with the second vacuum line and a first nozzle tip having a first flow path for supplying a scanning solution to the surface and a first flow path for sucking the scanning solution, 1 nozzle portion;
A second nozzle body having a purge gas introduction passage formed therein and a second nozzle tip having a diameter for receiving the first nozzle tip, the first nozzle tip being fastened to the first nozzle body while receiving the first nozzle tip, A second nozzle part forming a second flow path between the second nozzle tip and the vacuum flow path; And
A third nozzle forming a third flow path for allowing the purge gas introduced through the purge gas introduction flow path to flow along the outer circumferential surface of the second nozzle tip by being coupled to the second nozzle body while receiving the second nozzle tip, Wherein the substrate contamination analyzing apparatus comprises:
A cleaning chamber including a top cover, the cleaning chamber providing a space in which a process of cleaning and drying the front surface of the substrate is performed;
A contact sliding gate for opening and closing the cleaning chamber inlet;
A spin chuck provided in the cleaning chamber and supporting and rotating the substrate; And
And a fluid injection unit provided at one side of the cleaning chamber and discharging a cleaning liquid or gas to the upper part of the substrate while moving from the central part to the outer side of the rotating substrate during the cleaning process.
A fixed contact portion formed at an entrance of the chamber and having an inclined surface in a first direction;
And a sliding contact portion which is inclined in a second direction corresponding to the inclined surface of the fixed contact portion and which is raised by the driving portion when the inlet of the chamber is closed.
Collecting contaminants existing on the surface or below the substrate using a substrate scan nozzle having a structure in which three nozzle channels composed of an inner, a middle and an outer are inserted and three flow channels are formed;
Providing and analyzing contaminants to the analysis unit through the substrate scan nozzles; And
Cleaning and drying the substrate on which the scanning process has been performed in the cleaning unit,
The analysis of the substrate surface contaminants
Supplying a purge gas to a surface of the substrate through a third flow path of the substrate scan nozzle to form a purge gas barrier;
Sucking the purge gas flowing inward through the second flow path of the scan nozzle so that the purge gas does not flow into the first flow path of the scan nozzle;
Supplying a scanning solution to the surface of the substrate defined by the purge gas barrier through a first flow path of the substrate scan nozzle in a fixed amount;
Scanning the substrate while moving the scanning solution supplied in a fixed amount to collect contaminants; And
And supplying the scanning solution in which contamination is collected after the completion of the scanning to the analysis unit through the first flow path of the scan nozzle.
A nozzle cover connected to the scanning liquid supply line and the vacuum line, respectively, and fastened to the upper portion of the first nozzle unit; A first nozzle unit including a first nozzle body coupled to the nozzle cover and having a vacuum hole formed therein and a first nozzle tip having a first flow path for supplying a vacuum or a scanning solution to the substrate; A first nozzle body having a purge gas introduction hole formed therein and a second nozzle tip having a diameter for receiving the first nozzle tip, the first nozzle tip being enclosed by the first nozzle body and being fastened to the first nozzle body, A second nozzle part forming a second flow path communicating with the vacuum hole between the second nozzle tips; And a third flow path that is coupled to the second nozzle body while surrounding the second nozzle tip and has a third flow path for allowing the purge gas introduced through the purge gas introduction hole to flow along the outer peripheral surface of the second nozzle tip, ≪ / RTI > wherein the method is performed using a substrate scan nozzle comprising a substrate.
Introducing the substrate to be analyzed into a gas phase decomposition unit through a transfer unit;
Etching an upper portion of the substrate; And
Further comprising: positioning the etched substrate on a scan stage.
Collecting contaminants existing on the surface or below the substrate using a substrate scan nozzle having a structure in which three nozzle channels composed of an inner, a middle and an outer are inserted and three flow channels are formed;
Providing and analyzing contaminants to the analysis unit through the substrate scan nozzles; And
Cleaning and drying the substrate on which the scanning process has been performed in the cleaning unit,
Contaminant analysis below the substrate surface
Supplying a purge gas to a surface of the substrate through a third flow path of the substrate scan nozzle to form a purge gas barrier;
Sucking the purge gas flowing inward through the second flow path of the scan nozzle so that the purge gas does not flow into the first flow path of the scan nozzle;
Continuously supplying a predetermined amount of etchant through the first flow path of the substrate scan nozzle to the surface of the substrate defined by the purge gas barrier;
Etching under the surface of the substrate using the etchant continuously supplied in a constant amount; And
And measuring the profile of contaminants present below the substrate surface by successively feeding the etchant used in the etching and containing contaminants to the analysis unit through the first flow path of the scan nozzles .
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| KR1020140109825A KR101581376B1 (en) | 2014-08-22 | 2014-08-22 | Apparatus For Analyzing substrate Contamination And Method For Analyzing Wafer Contamination using the same |
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| KR1020140109825A KR101581376B1 (en) | 2014-08-22 | 2014-08-22 | Apparatus For Analyzing substrate Contamination And Method For Analyzing Wafer Contamination using the same |
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| KR101721167B1 (en) * | 2016-01-04 | 2017-04-10 | 주식회사 엘지실트론 | Method of analyzing metal contamination of a wafer |
| KR102217638B1 (en) | 2020-10-08 | 2021-02-19 | 주식회사 위드텍 | Apparatus and method for scanning the contaminant of the wafer surface |
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| KR20210108564A (en) * | 2020-02-26 | 2021-09-03 | 삼성전자주식회사 | Apparatus and method for ion analysis |
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