KR101589257B1 - Thin film deposition apparatus - Google Patents

Abstract

The thin film deposition apparatus includes a chamber, a susceptor, and a gas supply section. The chamber has an interior space in which the deposition process is performed. The susceptor is rotatably mounted in the chamber and supports a plurality of substrates directly on the upper surface around the center of rotation, or a substrate holder on which one or more substrates are disposed. The gas supply portion includes first, second and third gas introduction portions into which the first, second and third gases are introduced into the upper center of the susceptor, respectively, and a second gas introduction portion extending from the first gas introduction portion to inject the first gas onto the upper surface of the susceptor A second jetting portion extending from the second gas introducing portion so as to jet the second gas onto the upper surface of the susceptor from below the first jetting portion and a second jetting portion extending from the upper side of the first jetting portion to the upper surface And a third jetting portion extending from the third gas introducing portion so as to jet in a downward inclined direction with respect to the first jetting portion.

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus used for depositing a thin film on a substrate in the production of semiconductors and the like.

Generally, thin film manufacturing methods used in semiconductors include CVD (Chemical Vapor Deposition) and PVD (Physical Vapor Deposition). CVD is a technique in which a gaseous mixture is chemically reacted on the surface of a heated substrate to deposit a product on the surface of the substrate. The CVD method can be performed by various methods such as APCVD (Atmospheric CVD), LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD), MOCVD (Metal Chemical Vapor Deposition), and the like, depending on the kind of material used as a precursor, Organic CVD) method.

Recently, a nitride semiconductor for a light emitting diode has been spotlighted, and MOCVD is widely used for growing a single crystal of a nitride semiconductor for a light emitting diode. The MOCVD method vaporizes an organometallic compound, which is a raw material in a liquid state, in a gaseous state, and then supplies a vaporized source gas to a substrate to be vaporized, and contacts the substrate with a high temperature, thereby depositing a metal thin film on the substrate.

In the case of this MOCVD method, many injection methods are employed in a method for supplying the source gas to the substrate. In the injection method, the source gas is introduced into the upper center of the susceptor through an injector installed in the center of the chamber, and the introduced source gas is horizontally injected toward the periphery of the susceptor and supplied to the substrates on the susceptor.

However, according to the above-described injection method, since the internal space of the chamber is a high-temperature environment in the deposition process, the injected source gas comes into contact with the ceiling of the chamber while forming a rising air flow. The ceiling is designed to protect the top lid of the chamber.

As the source gas contacts the ceiling during the deposition process, unnecessary thin films may be deposited on the ceiling. Unnecessary thin films cause problems when the deposition process is repeated several times and affect the substrate. In order to prevent such problems, the operator has to frequently change the ceiling so that the PM (Preventive Maintenance) cycle is shortened. Therefore, the worker is inconvenienced. In addition, since some of the source gases are used for depositing unnecessary thin films on the ceiling, there is also a problem of lowering the supply efficiency of the source gas to the substrate.

An object of the present invention is to provide a thin film deposition apparatus capable of increasing unnecessary thin film deposition on the top lead side to increase the PM period and increase supply efficiency of the source gas.

According to an aspect of the present invention, there is provided a thin film deposition apparatus including: a chamber having an inner space in which a deposition process is performed; A susceptor rotatably installed in the chamber and directly supporting a plurality of substrates on a top surface around a rotation center, or supporting a substrate holder on which at least one substrate is disposed; And a first, a second, and a third gas introducing portion into which the first, second, and third gases are introduced into an upper center of the susceptor, respectively, and a second gas introducing portion that injects the first gas into the upper surface of the susceptor, A second jetting portion extending from the second gas introducing portion so as to jet the second gas to the upper surface of the susceptor from below the first jetting portion, and a second jetting portion extending from the upper side of the first jetting portion, And a third injecting portion extending from the third gas introducing portion to inject the third gas in a downward inclined direction with respect to the upper surface of the susceptor.

According to the present invention, it is possible to prevent the source gas from contacting the ceiling of the chamber during the deposition process. Thus, unnecessary thin films can be prevented from being deposited on the ceiling of the chamber. Therefore, the operator does not need to change the ceiling frequently, so the PM period can be increased. In addition, unnecessary thin films are prevented from being deposited on the ceiling of the chamber, thereby eliminating unnecessary consumption of the source gas and increasing the supply efficiency of the source gas.

1 is a side sectional view of a thin film deposition apparatus according to an embodiment of the present invention;
Fig. 2 is a side cross-sectional view showing a modified example of the gas supply portion in Fig. 1; Fig.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a side sectional view of a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a thin film deposition apparatus 100 includes a chamber 110, a susceptor 120, and a gas supply unit 130 for depositing a thin film on a substrate 10. Here, the substrate 10 may be a wafer or a glass substrate.

The chamber 110 has an internal space in which the deposition process is performed. The chamber 110 includes a chamber body 111 having an opened upper portion and a top lead 112 covering the upper opening of the chamber main body 111 and a ceiling made of quartz or the like 113).

The top lead 112 may be lowered during the deposition process to close the upper opening of the chamber body 111 and move up and down when loading or unloading the substrate 10 to open the upper opening of the chamber body 111 .

The susceptor 120 supports a plurality of substrates 10 on the upper surface along the circumference of the center. This is for thin film deposition at a time on more substrates 10 for mass production. A plurality of substrate seating portions 121 may be uniformly distributed around the center of the susceptor 120. [ The substrates 10 can be respectively mounted and supported on the substrate seating portions 121. [ As another example, although not shown, a plurality of substrate substrate holders may be uniformly distributed around the center of the susceptor 120. Each substrate holder houses and supports a plurality of substrates on its upper surface.

The susceptor 120 is rotatably installed in the chamber 110 by a rotation drive mechanism (not shown). For example, the susceptor 120 is supported by the susceptor support 122 and can rotate as the susceptor support 122 is rotated by the rotation drive mechanism. If the substrate holders are provided on the susceptor 120, the substrate holders are also rotatably installed by gas cushions and the like, respectively. This is to ensure that the source gas injected from the upper center of the susceptor 120 during the deposition process is uniformly supplied to all the substrates 10 on the susceptor 120. The susceptor 120 is heated by a heater (not shown) during the deposition process to allow the substrates 10 supported on the top surface to be heated.

The gas supply unit 130 supplies the first, second, and third gases to the substrates 10 on the susceptor 120. The gas supply unit 130 includes first, second, and third gas introduction units 131, 132, And 133, 135 and 135, respectively. The first, second, and third gas introducing portions 131, 132, and 133 introduce the first, second, and third gases into the upper center of the susceptor 120, respectively. The first, second and third gas inlet portions 131, 132 and 133 may extend through the top lead 112 and the ceiling 113 and extend to the upper center of the susceptor 120. The first, second, and third gas introducing portions 131, 132, and 133 are connected to the first, second, and third gas supply sources (not shown) 3 gas, respectively.

The first jet part 134 extends from the first gas introducing part 131 to jet the first gas onto the upper surface of the susceptor 120. One end of the first jetting section 134 is communicated with the lower end of the first gas introducing section 131 and the other end of the first jetting section 134 is opened to function as a jetting port. The first jet part 134 may be formed by extending from the lower end of the first gas introducing part 131 to the upper surface of the susceptor 120 in a bent manner.

The second jetting section 135 is disposed below the first jetting section 134. The second jetting section 135 is extended from the second gas introducing section 132 to jet the second gas onto the upper surface of the susceptor 120. One end of the second jetting section 135 is communicated with the lower end of the second gas introducing section 132 and the other end of the second jetting section 135 is opened to function as a jetting port. The second jetting section 135 may extend from the lower end of the second gas introducing section 132 to the upper surface of the susceptor 120 under the first jetting section 134.

The third jetting section 136 extends from the third gas introducing section 133 so as to jet the third gas from the upper side of the first jetting section 134 in a downward inclined direction with respect to the upper surface of the susceptor 120 . One end of the third jetting section 136 communicates with the lower end of the third gas introducing section 133 and the other end of the third jetting section 136 is opened to function as a jetting port. The third jetting section 136 may be bent from the lower end of the third gas introducing section 133 and extend from the upper side of the first jetting section 134 to the upper surface of the susceptor 120 so as to be bent. A guide 137 for guiding the third gas to spray in a downward inclined direction may be formed in the injection hole of the third spray part 136.

The third spraying section 136 deposits an unnecessary thin film on the ceiling 113 of the chamber 110 when the first and second gases serving as source gases are respectively injected from the first and second spraying sections 134 and 135, . In other words, the first and second gases injected from the first and second jetting parts 134 and 135 are diffused and mixed with each other, and the mixed gas flows toward the periphery of the susceptor 120. Since the internal space of the chamber 110 is a high temperature environment, the mixed first and second gases try to rise to the upper side in the chamber 110 while forming a rising air flow while flowing toward the periphery of the susceptor 120.

At this time, since the third gas is injected from the third spray part 136 in a downward inclined direction to the upper surface of the susceptor 120, the mixed first and second gases are introduced into the chamber 110 through the third gas And is induced to flow along the upper surface of the susceptor 120 in a side-by-side manner.

Therefore, since the mixed first and second gases are not brought into contact with the ceiling 113 of the chamber 110, unnecessary thin films can be prevented from being deposited on the ceiling 113. Thereby, the operator does not need to frequently change the ceiling 113, so the PM period can be increased. In addition, since unnecessary thin films are prevented from being deposited on the ceiling 113, unnecessary consumption of the first and second gases can be eliminated and the efficiency of supplying the first and second gases can be increased.

The first and second sprayers 134 and 135 may be formed to spray the first and second gases in the horizontal direction parallel to the upper surface of the susceptor 120, respectively. However, the present invention is not limited to this, and the first and second ejection portions may be formed in various ways such as spraying in a downward inclination direction in a range capable of smoothly supplying the first and second gases to the substrates 10 on the susceptor 120 have.

The third jetting portion 136 may be formed to jet the third gas in a direction inclined downward by 90 degrees with respect to the upper surface of the susceptor 120. To this end, the third jetting unit 136 may be provided with a guide 137 which is extended from the lower end of the jetting port at an upper end and then bent downward by 90 degrees.

As another example, as shown in FIG. 2, the third jetting portion 236 may be formed to jet the third gas in a downwardly inclined direction to less than 90 degrees with respect to the upper surface of the susceptor 120. To this end, the third spray part 236 may be provided with a guide 237 which is extended from the lower end of the injection port so as to protrude from the lower end and then bent down to less than 90 degrees downward. The guide 237 may be bent and extended downward from the upper end of the jetting port to less than 90 degrees. The spray angle of the third spray part 236 can be variously set to an angle of less than 90 degrees in a range capable of performing the above-described function.

On the other hand, when the deposition process is performed by the III-V group MOCVD method, the first gas may be a source gas containing a Group III element and the second gas may be a source gas containing a Group V element. The first gas may be TMG (trimethylgallium), TEG (triethylgallium), or TMI (trimethylindium) as an organic metal including a Group III element. The second gas may be a hydride containing a Group V element, such as NH ₃ or PH ₃ or AsH ₃ . The first and second gases may each include a carrier gas.

The third gas may be at least one selected from a gas containing a group V element, a hydrogen gas, and an inert gas. An example of a gas containing a Group V element may be a hydride comprising a Group V element such as NH ₃ or PH ₃ or AsH ₃ . Examples of the inert gas may be nitrogen (N ₂ ) gas, helium (He) gas, argon (Ar) gas, or the like.

Although not shown, the thin film deposition apparatus 100 may be provided between the first jetting section 134 and the second jetting section 135, or between the first jetting section 134 and the third jetting sections 136, 236, Or an inert gas supply unit for supplying the inert gas between the first and second injection units 136 and 236 or below the second spray unit 135 or the third spray units 136 and 236. The inert gas supplied from the inert gas supply part serves to prevent the reaction in the vicinity of the injection port between the first, second and third gases injected from the gas supply part 130, or acts as a carrier of the first, can do. Here, the inert gas may be a nitrogen gas, a helium gas, or an argon gas.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation and that those skilled in the art will recognize that various modifications and equivalent arrangements may be made therein. It will be possible. Accordingly, the true scope of protection of the present invention should be determined only by the appended claims.

110 .. chamber 112 .. top lead
113 .. ceiling 120 .. susceptor
130. Gas supply part 131. First gas introduction part
132 .. Second gas introducing part 133 .. Third gas introducing part
134 .. 1st jaw 135 .. 2nd jaw
136,236 .. The third divison part 137,237 .. Guide

Claims (6)

A chamber having an interior space in which a deposition process is performed;
A susceptor rotatably installed in the chamber and directly supporting a plurality of substrates on a top surface around a rotation center, or supporting a substrate holder on which at least one substrate is disposed; And
A first, a second, and a third gas introducing portions into which the first, second, and third gases are introduced into the upper center of the susceptor, respectively, and a second gas introducing portion that introduces the first gas into the susceptor from the first gas introducing portion A second jetting portion extending from the second gas introducing portion so as to jet the second gas to the upper surface of the susceptor from below the first jetting portion, and a second jetting portion extending from the upper side of the first jetting portion, And a third injecting part extending from the third gas introducing part so as to inject the third gas in a downward inclined direction with respect to the upper surface of the susceptor,
And a guide for guiding the third gas to be sprayed in a downward inclined direction is provided at an injection port of the third jetting unit. The method according to claim 1,
Wherein the third gas is at least one selected from a gas containing a Group V element, a hydrogen gas, and an inert gas. 3. The method of claim 2,
Wherein the first gas is a source gas containing a Group III element,
Wherein the second gas is a source gas containing a Group V element. The method according to claim 1,
The first and second injectors
The first and second gases being injected in a direction parallel to an upper surface of the susceptor;
The guide
Wherein the third injection part is extended at an upper end of an injection port of the third injection part so as to protrude from a lower end thereof and then is bent by 90 degrees downward. The method according to claim 1,
The first and second injectors
The first and second gases being injected in a direction parallel to an upper surface of the susceptor;
The guide
Wherein the third injection part is formed to extend from the upper end of the injection port of the third injection part downward to less than 90 degrees or to the upper end of the injection port of the third injection part so as to extend beyond the lower end, Film deposition apparatus. The method according to claim 1,
An inert gas supply unit for supplying an inert gas between the first jetting unit and the second jetting unit, or between the first jetting unit and the third jetting unit, or below the second jetting unit, or above the third jetting unit Wherein the thin film deposition apparatus further comprises a thin film deposition apparatus.

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