KR101586865B1 - Manufacturing method of an array substrate for liquid crystal display - Google Patents
Manufacturing method of an array substrate for liquid crystal display Download PDFInfo
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- KR101586865B1 KR101586865B1 KR1020090077211A KR20090077211A KR101586865B1 KR 101586865 B1 KR101586865 B1 KR 101586865B1 KR 1020090077211 A KR1020090077211 A KR 1020090077211A KR 20090077211 A KR20090077211 A KR 20090077211A KR 101586865 B1 KR101586865 B1 KR 101586865B1
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- KR
- South Korea
- Prior art keywords
- copper
- metal film
- based metal
- forming
- weight
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 30
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 61
- 239000000203 mixture Substances 0.000 claims abstract description 58
- 238000005530 etching Methods 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- -1 azole compound Chemical class 0.000 claims abstract description 16
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims abstract description 15
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 11
- 150000003839 salts Chemical class 0.000 claims abstract description 9
- 239000010408 film Substances 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 33
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 11
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 10
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 150000003007 phosphonic acid derivatives Chemical class 0.000 claims description 8
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 7
- 229940042400 direct acting antivirals phosphonic acid derivative Drugs 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- DEPDDPLQZYCHOH-UHFFFAOYSA-N 1h-imidazol-2-amine Chemical compound NC1=NC=CN1 DEPDDPLQZYCHOH-UHFFFAOYSA-N 0.000 claims description 4
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910017855 NH 4 F Inorganic materials 0.000 claims description 4
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 claims description 3
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- NJQHZENQKNIRSY-UHFFFAOYSA-N 5-ethyl-1h-imidazole Chemical compound CCC1=CNC=N1 NJQHZENQKNIRSY-UHFFFAOYSA-N 0.000 claims description 2
- HPSJFXKHFLNPQM-UHFFFAOYSA-N 5-propyl-1h-imidazole Chemical compound CCCC1=CNC=N1 HPSJFXKHFLNPQM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- 150000001298 alcohols Chemical class 0.000 claims 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims 2
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 claims 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 claims 1
- 159000000000 sodium salts Chemical class 0.000 claims 1
- 150000003458 sulfonic acid derivatives Chemical class 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000011651 chromium Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910001431 copper ion Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- FMIYEEHJBJEQKQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole;2-methyl-1h-imidazole Chemical compound CC1=NC=CN1.CCC1=NC=CN1 FMIYEEHJBJEQKQ-UHFFFAOYSA-N 0.000 description 1
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XMEDDALPOKNUEP-UHFFFAOYSA-N [Mo].[In] Chemical compound [Mo].[In] XMEDDALPOKNUEP-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000008194 pharmaceutical composition Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- VBKNTGMWIPUCRF-UHFFFAOYSA-M potassium;fluoride;hydrofluoride Chemical compound F.[F-].[K+] VBKNTGMWIPUCRF-UHFFFAOYSA-M 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- BFXAWOHHDUIALU-UHFFFAOYSA-M sodium;hydron;difluoride Chemical compound F.[F-].[Na+] BFXAWOHHDUIALU-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000004148 unit process Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
- ing And Chemical Polishing (AREA)
Abstract
본 발명은 a)기판 상에 게이트 배선을 형성하는 단계; b)상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계; c)상기 게이트 절연층 상에 반도체층을 형성하는 단계; d)상기 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및 e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서, 상기 a)단계는 기판 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 식각액 조성물로 식각하여 게이트 배선을 형성하는 단계를 포함하고, 상기 d)단계는 반도체층 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 식각액 조성물로 식각하여 소스 및 드레인 전극을 형성하는 단계를 포함하며, 상기 식각액 조성물은, 조성물 총 중량에 대하여, A)과산화수소(H2O2) 5 내지 25 중량%, B)함불소 화합물 0.01 내지 1.0 중량%, C)아졸화합물 0.1 내지 5 중량%, D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물 0.1 내지 10.0 중량% 및 E)잔량의 물을 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법에 관한 것이다.The present invention provides a method of manufacturing a semiconductor device, comprising: a) forming a gate wiring on a substrate; b) forming a gate insulating layer on the substrate including the gate wiring; c) forming a semiconductor layer on the gate insulating layer; d) forming source and drain electrodes on the semiconductor layer; And forming a pixel electrode connected to the drain electrode, wherein the step a) includes the steps of: forming a copper-based metal film on the substrate and forming the copper-based metal film on the etchant composition Wherein the step d) includes forming a copper-based metal film on the semiconductor layer and etching the copper-based metal film with the etchant composition to form source and drain electrodes, Wherein the etchant composition comprises A) from 5 to 25% by weight of hydrogen peroxide (H 2 O 2 ), from 0.01 to 1.0% by weight of a fluorine compound, from C) from 0.1 to 5% by weight of an azole compound, D) 0.1 to 10.0% by weight of at least one compound selected from a sulfonic acid derivative and a salt thereof, and E) a residual amount of water. It relates.
구리막, 식각액, 액정표시장치, 게이트, 소스, 드레인 Copper film, etchant, liquid crystal display, gate, source, drain
Description
본 발명은 액정표시장치용 어레이 기판의 제조방법, 구리계 금속막의 식각액 조성물, 및 상기 식각액 조성물을 사용하는 구리계 금속막의 식각방법에 관한 것이다.The present invention relates to a method for manufacturing an array substrate for a liquid crystal display, an etching liquid composition for a copper-based metal film, and a method for etching a copper-based metal film using the etching liquid composition.
반도체 장치에서 기판 위에 금속 배선을 형성하는 과정은 통상적으로 스퍼터링 등에 의한 금속막 형성공정, 포토레지스트 도포, 노광 및 현상에 의한 선택적인 영역에서의 포토레지스트 형성공정, 및 식각공정에 의한 단계로 구성되고, 개별적인 단위 공정 전후의 세정 공정 등을 포함한다. 이러한 식각공정은 포토레지스트를 마스크로 하여 선택적인 영역에 금속막을 남기는 공정을 의미하며, 통상적으로 플라즈마 등을 이용한 건식식각 또는 식각액 조성물을 이용하는 습식식각이 사용된다.The process of forming a metal wiring on a substrate in a semiconductor device is generally composed of a metal film forming process by sputtering or the like, a photoresist coating process, a photoresist forming process in an optional region by exposure and development, and an etching process , A cleaning process before and after the individual unit process, and the like. This etching process refers to a process of leaving a metal film in a selective region using a photoresist as a mask. Typically, dry etching using plasma or wet etching using an etching composition is used.
이러한 반도체 장치에서, 최근 금속배선의 저항이 주요한 관심사로 떠오르고 있다. 왜냐하면 TFT-LCD(thin film transistor-liquid crystal display)에 있어서 RC 신호지연 문제를 해결하는 것이 패널크기 증가와 고해상도 실현에 관건이 되 는데, 저항이 RC 신호지연을 유발하는 주요한 인자이기 때문이다. 따라서, TFT-LCD의 대형화에 필수적으로 요구되는 RC 신호지연의 감소를 실현하기 위해서는, 저저항의 물질을 개발하는 것이 필수적이다. In such a semiconductor device, resistance of metal wiring has recently become a major concern. This is because resolving the RC signal delay problem in TFT-LCD (thin film transistor-liquid crystal display) is a key factor in increasing the panel size and realizing high resolution, because the resistance is the main factor causing the RC signal delay. Therefore, it is essential to develop a low-resistance material in order to realize reduction of the RC signal delay, which is indispensably required for enlarging the TFT-LCD.
종래에 주로 사용되었던 크롬(Cr, 비저항: 12.7 ×10-8Ωm), 몰리브덴(Mo, 비저항: 5×10-8Ωm), 알루미늄(Al, 비저항: 2.65 ×10-8Ωm) 및 이들의 합금은 저항이 크기 때문에 대형 TFT LCD에 사용되는 게이트 및 데이터 배선 등으로 이용하기 어렵다. 따라서, 저저항 금속막으로서 구리막 및 구리 몰리브덴막 등의 구리계 금속막과 그에 대한 식각액 조성물이 주목을 받고 있다. 그런데, 현재까지 알려진 구리계 식각액 조성물들은 사용자가 요구하는 성능을 충족시키지 못하고 있기 때문에 성능 향상을 위한 연구개발이 요구되고 있다.Chromium which was mainly used conventionally (Cr, specific resistance: 12.7 × 10 -8 Ωm), molybdenum (Mo, specific resistance: 5 × 10 -8 Ωm), aluminum (Al, specific resistance: 2.65 × 10 -8 Ωm), and alloys thereof Is difficult to be used for gate and data wiring used in a large-sized TFT LCD. Therefore, a copper-based metal film such as a copper film and a copper molybdenum film and an etchant composition therefor are attracting attention as a low resistance metal film. However, since copper etching compositions known to date do not satisfy the performance required by users, research and development for performance improvement are required.
본 발명은 식각시 직선성이 우수한 테이퍼프로파일이 형성되고, 금속막의 잔사가 남지 않는 구리계 금속막의 식각액 조성물을 제공하는 것을 목적으로 한다.An object of the present invention is to provide an etching solution composition for a copper-based metal film in which a taper profile having excellent linearity at the time of etching is formed and a residue of a metal film is not left.
또한, 본 발명은 게이트 전극과 게이트 배선 및 소스/드레인 전극과 데이터 배선의 일괄 식각이 가능한 구리계 금속막의 식각액 조성물을 제공하는 것을 목적으로 한다.Another object of the present invention is to provide a copper-based metal film etchant composition capable of collectively etching gate electrodes, gate wirings, source / drain electrodes, and data wirings.
또한, 본 발명은 상기 식각액 조성물을 사용하는 구리계 금속막의 식각방법 및 액정표시장치용 어레이 기판의 제조방법을 제공하는 것을 목적으로 한다. It is still another object of the present invention to provide a method of etching a copper-based metal film using the etchant composition and a method of manufacturing an array substrate for a liquid crystal display device.
본 발명은 조성물 총중량에 대하여, A)과산화수소(H2O2) 5 내지 25 중량%, B)함불소 화합물 0.01 내지 1.0 중량%, C)아졸화합물 0.1 내지 5 중량%, D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물 0.1 내지 10.0 중량%, 및 E)잔량의 물을 포함하는 구리계 금속막의 식각액 조성물을 제공한다.The present invention relates to a process for the preparation of a composition comprising a) from 5 to 25% by weight of hydrogen peroxide (H 2 O 2 ), from 0.01 to 1.0% by weight of a fluorine compound, C) from 0.1 to 5% by weight of an azole compound, D) 0.1 to 10.0% by weight of at least one compound selected from the salts thereof, and E) balance of water.
또한, 본 발명은 Ⅰ)기판 상에 구리계 금속막을 형성하는 단계; Ⅱ)상기 구리계 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및 Ⅲ)본 발명의 식각액 조성물을 사용하여 상기 구리계 금속막을 식각하는 단계를 포함하는 구리계 금속막의 식각방법을 제공한다.The present invention also provides a method of manufacturing a semiconductor device, comprising: (I) forming a copper-based metal film on a substrate; II) selectively leaving a photoreactive material on the copper-based metal film; And (III) etching the copper-based metal film using the etchant composition of the present invention.
또한, 본 발명은 a)기판 상에 게이트 배선을 형성하는 단계; b)상기 게이 트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계; c)상기 게이트 절연층 상에 반도체층을 형성하는 단계; d)상기 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및 e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서, 상기 a)단계는 기판 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 본 발명의 식각액 조성물로 식각하여 게이트 배선을 형성하는 단계를 포함하고, 상기 d)단계는 반도체층 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 본 발명의 식각액 조성물로 식각하여 소스 및 드레인 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법을 제공한다.The present invention also provides a method of manufacturing a semiconductor device, comprising the steps of: a) forming a gate wiring on a substrate; b) forming a gate insulating layer on the substrate including the gate wiring; c) forming a semiconductor layer on the gate insulating layer; d) forming source and drain electrodes on the semiconductor layer; And e) forming a pixel electrode connected to the drain electrode, wherein the step a) includes forming a copper-based metal film on the substrate and forming the copper-based metal film on the substrate according to the present invention And forming a gate wiring by etching with the etchant composition of the present invention. In the step d), a copper-based metal film is formed on the semiconductor layer and the copper-based metal film is etched by the etchant composition of the present invention to form source and drain electrodes The method comprising the steps of: forming an array substrate on a substrate;
또한, 본 발명은 본 발명의 식각액 조성물을 사용하여 식각된 게이트 배선 및 소스/드레인 전극 중 하나 이상을 포함하는 액정표시장치용 어레이 기판을 제공한다.The present invention also provides an array substrate for a liquid crystal display comprising at least one of gate wirings and source / drain electrodes etched using the etchant composition of the present invention.
본 발명의 식각액 조성물은 구리계 금속막을 식각할 때, 직선성이 우수한 테이퍼프로파일을 구현하며, 잔사를 발생시키지 않으므로 전기적인 쇼트나 배선의 불량, 휘도의 감소 등의 문제로부터 자유롭다.The etchant composition of the present invention realizes a taper profile with excellent linearity when etching a copper-based metal film, and does not generate residues, so that it is free from problems such as electrical shorts, poor wiring, and reduced brightness.
또한, 본 발명의 식각액 조성물은 액정표시장치용 어레이 기판을 제조시, 게이트 전극과 게이트 배선 및 소스/드레인과 데이터 배선을 일괄 식각할 수 있어, 식각공정을 단순화시키며 공정수율을 극대화시킨다.In addition, the etchant composition of the present invention can collectively etch gate electrodes, gate wirings, source / drain and data wirings at the time of manufacturing an array substrate for a liquid crystal display, thereby simplifying the etching process and maximizing the process yield.
따라서, 본 발명의 식각액 조성물은 대화면, 고휘도의 회로가 구현되는 액 정표시장치용 어레이 기판의 제조시에 매우 유용하게 사용될 수 있다.Therefore, the etchant composition of the present invention can be very usefully used in the production of an array substrate for a liquid crystal display market in which a circuit of a large screen and a high luminance is realized.
본 발명은, A)과산화수소(H2O2) 5 내지 25 중량%, B)불소 화합물 0.01 내지 1.0 중량%, C)아졸화합물 0.1 내지 5 중량%, D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물 0.1 내지 10.0 중량% 및 E)잔량의 물을 포함하는 구리계 금속막의 식각액 조성물에 관한 것이다. The present invention relates to a process for the preparation of a pharmaceutical composition which comprises A) 5-25% by weight of hydrogen peroxide (H 2 O 2 ), B) 0.01-1.0% by weight of a fluorine compound, C) 0.1-5% by weight of an azole compound, D) 0.1 to 10.0% by weight of at least one compound and E) balance of water.
본 발명에서 구리계 금속막은 막의 구성성분 중에 구리가 포함되는 것으로서, 단일막 및 이중막 등의 다층막을 포함하는 개념이다. 예컨대, 구리 또는 구리 합금의 단일막, 다층막으로서 구리 몰리브덴막, 구리 몰리브덴 합금막 등이 포함된다. 상기 구리 몰리브덴막은 몰리브덴층과 상기 몰리브덴층 상에 형성된 구리층을 포함하는 것을 의미하며, 상기 구리 몰리브덴 합금막은 몰리브덴 합금층과 상기 몰리브덴 합금층 상에 형성된 구리층을 포함하는 것을 의미한다. 또한, 상기 몰리브덴 합금층은 예컨대, 티타늄(Ti), 탄탈륨(Ta), 크롬(Cr), 니켈(Ni), 네오디늄(Nd), 및 인듐(In) 등으로 이루어진 군에서 선택되는 하나 이상과 몰리브덴의 합금을 의미한다.In the present invention, the copper-based metal film includes copper as a constituent component of the film, and includes a multilayer film such as a single film and a double film. For example, a single film of copper or a copper alloy, a copper molybdenum film, a copper molybdenum alloy film, or the like as a multilayer film. The copper molybdenum film includes a molybdenum layer and a copper layer formed on the molybdenum layer, and the copper molybdenum alloy film includes a molybdenum alloy layer and a copper layer formed on the molybdenum alloy layer. The molybdenum alloy layer may include at least one selected from the group consisting of titanium (Ti), tantalum (Ta), chromium (Cr), nickel (Ni), neodymium (Nd), indium Molybdenum alloy.
본 발명의 식각액 조성물에 포함되는 A)과산화수소(H2O2)는 구리계 금속막을 식각하는 주성분이며, 함량은 조성물 총중량에 대하여 5 내지 25 중량%이다. 상기 A)과산화수소의 함량이 5 중량% 미만이면, 구리계 금속의 식각이 되지 안되거나 식각속도가 아주 느려지며, 25 중량%를 초과하면 식각속도가 전체적으로 빨라지기 때문에 공정 컨트롤이 어렵다.A) hydrogen peroxide (H 2 O 2 ) contained in the etchant composition of the present invention is a main component for etching the copper-based metal film, and its content is 5 to 25% by weight based on the total weight of the composition. If the A) content of hydrogen peroxide is less than 5 wt%, the copper-based metal is not etched or the etching rate becomes very slow. If the content is more than 25 wt%, the etching speed is entirely accelerated.
본 발명의 식각액 조성물에 포함되는 B)함불소 화합물은 물에 해리되어 플루오르 이온을 낼 수 있는 화합물을 의미한다. 상기 B)함불소 화합물은 구리막과 몰리브덴막을 동시에 식각하는 용액에서 필연적으로 발생하는 잔사를 제거하여 주는 역할을 한다. 상기 B)함불소 화합물의 함량은 조성물 총중량에 대하여 0.01 내지 1.0 중량%이다. 상기 B)함불소 화합물의 함량이 0.01 중량% 미만인 경우, 식각 잔사가 발생될 수 있으며, 1.0 중량%를 초과하는 경우에는 유리 기판 식각율이 크게 발생 되는 문제가 있다.The fluorine-containing compound (B) contained in the etchant composition of the present invention means a compound capable of releasing fluorine ions by being dissolved in water. The B) fluorine compound serves to remove residues which are inevitably generated in a solution which simultaneously etches the copper film and the molybdenum film. The content of the fluorine-containing compound (B) is 0.01 to 1.0% by weight based on the total weight of the composition. If the content of the fluorine compound (B) is less than 0.01% by weight, etch residue may be generated. If the content of the fluorine compound exceeds 1.0% by weight, the glass substrate etching rate may be increased.
상기 B)함불소 화합물은 이 분야에서 사용되는 물질로서 용액 내에서 플루오르 이온 혹은 다원자 플루오르 이온으로 해리될 수 있는 것이라면 특별히 한정되지 않으나, 불화암모늄(ammonium fluoride: NH4F), 불화나트륨(sodium fluoride: NaF), 불화칼륨(potassium fluoride: KF), 중불화암모늄(ammonium bifluoride: NH4FHF), 중불화나트륨(sodium bifluoride: NaFHF) 및 중불화칼륨(potassium bifluoride: KFHF) 등으로 이루어진 군으로부터 선택되는 1종 또는 2종 이상인 것이 바람직하다.The B) fluorine compound is not particularly limited as long as it can be dissociated into fluorine ions or polyatomic fluorine ions in a solution used in the field, but ammonium fluoride (NH 4 F), sodium fluoride from potassium fluoride (KFHF), ammonium bifluoride (NH 4 FHF), sodium bifluoride (NaFHF) and potassium bifluoride (KFHF) It is preferable that one kind or two kinds or more of them are selected.
본 발명의 식각액 조성물에 포함되는 C)아졸화합물은 구리계 금속의 식각 속도를 조절하며 패턴의 시디로스(CD Loss)를 줄여주어 공정상의 마진을 높이는 역할을 한다. 상기 C)아졸화합물의 함량은 조성물 총 중량에 대하여, 0.1 내지 5 중량%이다. 상기 C)아졸화합물의 함량이 0.1 중량% 미만인 경우, 식각 속도가 빠르게 되어 시디로스가 너무 크게 발생될 수 있으며, 5 중량%를 초과하는 경우, 구리의 식각속도가 느려지고 몰리브덴 또는 몰리브덴 합금의 식각 속도가 빨라지기 때문에 몰리브덴 또는 몰리브덴 합금이 과식각되어 언더컷이 발생 될 수 있다.The C) azole compound contained in the etchant composition of the present invention controls the etch rate of the copper-based metal and reduces the CD loss of the pattern, thereby enhancing the process margin. The content of the C) azole compound is 0.1 to 5% by weight based on the total weight of the composition. If the content of the C) azole compound is less than 0.1% by weight, the etching rate may become high and the seed loss may be excessively large. If the content of the C) azole compound exceeds 5% by weight, the etching rate of copper may be slowed and the etching rate of the molybdenum or molybdenum alloy Molybdenum or molybdenum alloy is over-deflected and undercut may occur.
상기 C)아졸화합물로는 예컨대, 아미노테트라졸(aminotetrazole), 벤조트리아졸 (benzotriazole), 톨리트리아졸(tolytriazole), 피라졸(pyrazole), 피롤(pyrrole), 이미다졸, 2-메틸이미다졸, 2-에틸이미다졸, 2-프로필이미다졸, 2-아미노이미다졸, 4-메틸이미다졸, 4-에틸이미다졸, 4-프로필이미다졸 등을 들 수 있으며, 이들은 1종 단독으로 또는 2종 이상이 함께 사용될 수 있다.Examples of the C) azole compound include aminotetrazole, benzotriazole, tolytriazole, pyrazole, pyrrole, imidazole, 2-methylimidazole 2-ethylimidazole, 2-aminoimidazole, 4-methylimidazole, 4-ethylimidazole, 4-propylimidazole and the like. The species may be used singly or two or more species may be used together.
본 발명의 식각액 조성물에 포함되는 D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물은 구리막을 식각할 때 식각액에 용해되는 구리 이온을 킬레이팅하여 구리이온의 활동도를 억제함으로써 과산화수소의 분해 반응을 억제한다. 이렇게 구리이온의 활동도를 낮추게 되면 식각액을 사용하는 동안 안정적으로 공정을 진행 할 수 있다. 상기 D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물의 함량은 조성물 총 중량에 대하여 0.1 내지 10.0 중량%이다. 상기 D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물의 함량이 0.1 중량% 미만인 경우, 식각 균일성이 저하되고 과산화수소의 분해가 가속화 되는 문제가 발생하며, 10.0 중량%를 초과하면 식각속도가 너무 빨라지는 문제가 발생한다.The at least one compound selected from D) phosphonic acid derivatives and salts thereof contained in the etchant composition of the present invention is a compound which chelates copper ions dissolved in an etchant when the copper film is etched to inhibit the activity of copper ions thereby decomposing hydrogen peroxide Inhibit the reaction. When the activity of the copper ion is lowered, the process can be performed stably while using the etching solution. The content of at least one compound selected from the above D) phosphonic acid derivatives and salts thereof is 0.1 to 10.0% by weight based on the total weight of the composition. If the amount of the at least one compound selected from the D) phosphonic acid derivative and its salt is less than 0.1% by weight, the etching uniformity is lowered and the decomposition of hydrogen peroxide accelerates. When the content exceeds 10.0% by weight, A problem occurs that the speed becomes too fast.
상기 D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물에 있어서, 포스폰산 유도체의 대표적인 예로는 1-히드록시에틸리덴-1,1-디포스포닉산(HEDP: 1-hydroxyethylidene-1,1-diphosphonic acid)을 들 수 있으며, 포스폰산 유도체 염의 대표적인 예로는 1-히드록시에틸리덴-1,1-디포스포닉산의 나트륨 또는 칼륨염을 들 수 있다.In the at least one compound selected from the above D) phosphonic acid derivatives and salts thereof, typical examples of the phosphonic acid derivatives include 1-hydroxyethylidene-1 (HEDP) 1-diphosphonic acid). Typical examples of the phosphonic acid derivative salt include sodium or potassium salts of 1-hydroxyethylidene-1,1-diphosphonic acid.
본 발명의 식각액 조성물에 포함되는 E)물은 특별히 한정되는 것은 아니나, 탈이온수가 바람직하다. 더욱 바람직하게는 물의 비저항 값(즉, 물속에 이온이 제거된 정도)이 18㏁/㎝이상인 탈이온수를 사용하는 것이 좋다. The E) water contained in the etchant composition of the present invention is not particularly limited, but deionized water is preferred. More preferably, it is preferable to use deionized water having a resistivity value of water (i.e., the degree of removal of ions in water) of 18 M? / Cm or more.
본 발명의 식각액 조성물은 계면활성제를 더 포함할 수 있다. 상기 계면활성제는 표면장력을 저하시켜 식각의 균일성을 증가시키는 역할을 한다. 상기 계면활성제는 본 발명의 식각액 조성물에 견딜 수 있고, 상용성이 있는 것이라면 특별히 한정되지 않으나, 음이온성 계면활성제, 양이온성 계면활성제, 양쪽 이온성 계면활성제, 비이온성 계면활성제 및 다가알코올형 계면활성제로 이루어진 군에서 선택되는 1종 또는 2종 이상인 것이 바람직하다. The etchant composition of the present invention may further comprise a surfactant. The surfactant serves to lower the surface tension and increase the uniformity of the etching. The surfactant is not particularly limited as long as it can withstand the etching composition of the present invention and is compatible with the surfactant. However, the surfactant may be an anionic surfactant, a cationic surfactant, an amphoteric surfactant, a nonionic surfactant and a polyhydric alcohol surfactant , Or a combination thereof.
또한, 전술한 성분 이외에 통상의 첨가제를 더 첨가할 수 있으며, 첨가제로는 금속 이온 봉쇄제, 및 부식 방지제 등을 들 수 있다.In addition to the above-described components, conventional additives may be further added. Examples of the additive include a metal ion blocking agent and a corrosion inhibitor.
본 발명에서 사용되는 A)과산화수소(H2O2), B)함불소 화합물, C)아졸화합물, D)포스폰산 유도체 및 그의 염으로부터 선택되는 1종 이상의 화합물 및 E)물을 포함하는 식각액은 통상적으로 공지된 방법에 의해서 제조가 가능하며, 반도체 공정용의 순도를 가지는 것이 바람직하다. The etching solution comprising at least one compound selected from A) hydrogen peroxide (H 2 O 2 ), B) fluorine compounds, C) azole compounds, D) phosphonic acid derivatives and salts thereof and E) It can be prepared by a conventionally known method and preferably has a purity for semiconductor processing.
본 발명의 식각액 조성물은 구리계 금속으로 이루어진 액정표시장치의 게이트 전극과 게이트 배선 및 소스/드레인 전극과 데이터 배선을 일괄 식각할 수 있다.The etchant composition of the present invention can collectively etch gate electrodes, gate wirings, source / drain electrodes, and data wirings of a liquid crystal display device made of a copper-based metal.
또한, 본 발명은,Further, according to the present invention,
Ⅰ)기판 상에 구리계 금속막을 형성하는 단계;I) forming a copper-based metal film on a substrate;
Ⅱ)상기 구리계 금속막 상에 선택적으로 광반응 물질을 남기는 단계; 및II) selectively leaving a photoreactive material on the copper-based metal film; And
Ⅲ)본 발명의 식각액 조성물을 사용하여 상기 구리계 금속막을 식각하는 단계를 포함하는 구리계 금속막의 식각방법에 관한 것이다.III) etching the copper-based metal film using the etching solution composition of the present invention.
본 발명의 식각방법에서, 상기 광반응 물질은 통상적인 포토레지스트 물질인 것이 바람직하며, 통상적인 노광 및 현상 공정에 의해 선택적으로 남겨질 수 있다.In the etching method of the present invention, the photoreactive material is preferably a conventional photoresist material, and may be selectively left by conventional exposure and development processes.
또한, 본 발명은, Further, according to the present invention,
a)기판 상에 게이트 배선을 형성하는 단계; a) forming a gate wiring on the substrate;
b)상기 게이트 배선을 포함한 기판 상에 게이트 절연층을 형성하는 단계; b) forming a gate insulating layer on the substrate including the gate wiring;
c)상기 게이트 절연층 상에 반도체층을 형성하는 단계; c) forming a semiconductor layer on the gate insulating layer;
d)상기 반도체층 상에 소스 및 드레인 전극을 형성하는 단계; 및 d) forming source and drain electrodes on the semiconductor layer; And
e)상기 드레인 전극에 연결된 화소전극을 형성하는 단계를 포함하는 액정표시장치용 어레이 기판의 제조방법에 있어서, e) forming a pixel electrode connected to the drain electrode, the method comprising the steps of:
상기 a)단계는 기판 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 본 발명의 식각액 조성물로 식각하여 게이트 배선을 형성하는 단계를 포함하며, The step a) includes forming a copper-based metal film on the substrate and etching the copper-based metal film with the etchant composition of the present invention to form a gate wiring,
상기 d)단계는 반도체층 상에 구리계 금속막을 형성하고 상기 구리계 금속막을 본 발명의 식각액 조성물로 식각하여 소스 및 드레인 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치용 어레이 기판의 제조방법에 관한 것이다.And d) forming a copper-based metal film on the semiconductor layer and etching the copper-based metal film with the etchant composition of the present invention to form source and drain electrodes. And a manufacturing method thereof.
상기 액정표시장치용 어레이 기판은 박막트랜지스터(TFT) 어레이 기판일 수 있다. The array substrate for a liquid crystal display may be a thin film transistor (TFT) array substrate.
이하에서 본 발명을 실시예를 통하여 더욱 구체적으로 설명한다. 그러나, 하기의 실시예에 의하여 본 발명의 범위가 제한되는 것은 아니다. Hereinafter, the present invention will be described more specifically with reference to examples. However, the scope of the present invention is not limited by the following examples.
실시예1 내지 6: 구리계 금속막의 식각액 조성물의 제조 Examples 1 to 6: Preparation of etchant composition of copper-based metal film
하기 표 1에 나타낸 조성에 따라 실시예 1 내지 6의 식각액 조성물을 제조하였다. The etchant compositions of Examples 1 to 6 were prepared according to the compositions shown in Table 1 below.
*HEDP: 1-히드록시에틸리덴-1,1-디포스포닉산* HEDP: 1-hydroxyethylidene-1,1-diphosphonic acid
시험예: 식각액 조성물의 특성평가Test Example: Characteristic Evaluation of Etchant Composition
실시예1 내지 실시예6의 식각액 조성물을 이용하여 구리계 금속막(Cu 단일막 및 Cu/Mo-Ti 이중막)의 식각공정을 수행하였다. 식각공정 시 식각액 조성물의 온도는 약 30 ℃ 내외로 하였으나, 적정온도는 다른 공정조건과 기타 요인에 의해 필요에 따라 변경될 수 있다. 식각 시간은 식각 온도에 따라서 다를 수 있으나, 통상 30 내지 180초 정도로 진행한다. 상기 식각공정에서 식각된 구리계 금속막의 프로파일을 단면 SEM (Hitachi사 제품, 모델명 S-4700)을 사용하여 검사하였고, 결과를 하기 표2에 기재하였다.The etching process of the copper-based metal film (Cu single film and Cu / Mo-Ti double film) was performed using the etchant compositions of Examples 1 to 6. The temperature of the etchant composition during the etching process is about 30 캜, but the proper temperature may be changed as needed depending on other process conditions and other factors. The etching time may vary depending on the etching temperature, but is usually 30 to 180 seconds. The profile of the copper-based metal film etched in the etching process was inspected using a cross-sectional SEM (product of Hitachi, model name S-4700), and the results are shown in Table 2 below.
상기 표2의 결과로부터, 실시예1 내지 실시예6의 식각속도는 적당한 것으로 확인되었다. 또한, 도 1 및 2에서 확인할 수 있는 바와 같이, 실시예1에 따른 식각액 조성물로 식각한 구리계 금속막은 양호한 식각 프로파일을 나타내었다. 또한, 도 3에서 확인할 수 있는 바와 같이, 실시예1에 따른 식각액 조성물로 구리막계 금속막을 식각 한 경우, 식각 잔사가 남지 않았다. From the results shown in Table 2, it was confirmed that the etching rates of Examples 1 to 6 were appropriate. Also, as can be seen from Figs. 1 and 2, the copper-based metal film etched with the etchant composition according to Example 1 exhibited a good etching profile. Further, as can be seen from FIG. 3, when the copper film-based metal film was etched with the etching solution composition according to Example 1, the etching residue remained.
따라서, 본 발명의 식각액 조성물은 구리계 금속막의 우수한 테이퍼프로파일, 패턴의 직선성, 적당한 식각 속도를 제공하며, 특히, 식각 후 잔사가 전혀 남지 않는 우수한 식각 특성을 가짐을 알 수 있다.Therefore, it can be seen that the etching composition of the present invention has excellent taper profile of copper-based metal film, linearity of pattern, proper etching rate, and particularly excellent etching property which does not leave any residue after etching.
비교예1 내지 2: 식각액 조성물의 처리매수 평가COMPARATIVE EXAMPLES 1 and 2: Evaluating the number of treatments of the etchant composition
하기 표3에 기재된 비교예1의 식각액 조성물(종래의 식각액 조성물)과 본 발명 실시예3의 식각액 조성물을 사용하여 Cu 농도에 따른 side etch(㎛) 변화량을 측정하였다. Side Etch는 식각 후에 측정된 포토레지스트 끝단과 하부 금속 끝단 사이의 거리를 말한다. Side etch 량이 변화 하면, TFT 구동시 신호 전달 속도가 변화하게 되어 얼룩이 발생 될 수 있기 때문에, side etch 변화량은 최소화 되는 것이 바람직하다. 본 평가에서는 side etch 변화량이 ±0.1 ㎛ 인 조건이 충족되는 경우에 식각액 조성물을 식각공정에 계속 사용할 수 있는 것으로 정하고 실험을 실시하였다.The etchant composition of Comparative Example 1 (conventional etchant composition) shown in Table 3 and the etchant composition of Example 3 of the present invention were used to measure changes in side etch (占 퐉) according to Cu concentration. Side Etch is the distance between the photoresist tip and the bottom metal tip measured after etching. If the side etch amount is changed, since the signal transmission speed may change during TFT driving, unevenness may occur, so that the side etch variation amount is preferably minimized. In this evaluation, when the condition of the side etch variation of ± 0.1 μm is satisfied, the etching composition is determined to be continuously used in the etching process and the experiment is conducted.
상기 표 3에 나타낸 바와 같이, 종래의 식각액 조성물인 비교예 1은 Cu가 4500 ppm이 용출 될 때까지 사용이 가능한 반면, 본 발명 실시예3의 식가액 조성물은 Cu가 6000 ppm이 용출될 때까지 사용 가능함을 확인할 수 있다.As shown in Table 3, Comparative Example 1, which is a conventional etchant composition, can be used until 4500 ppm of Cu is eluted, whereas in the edible liquid composition of Example 3, until 6000 ppm of Cu is eluted It can be confirmed that it is usable.
도 1은 본 발명의 실시예1의 식각액 조성물을 사용하여 Cu/Mo-Ti 이중막을 식각한 후, 식각 단면을 관찰한 주사전자현미경 사진이고,1 is a scanning electron microscope (SEM) image of a Cu / Mo-Ti double-layer film etched using the etchant composition of Example 1 of the present invention,
도 2는 본 발명의 실시예1의 식각액 조성물을 사용하여 Cu/Mo-Ti 이중막을 식각한 후, 전체적인 식각 프로파일을 관찰한 주사전자현미경 사진이고,FIG. 2 is a scanning electron microscope (SEM) image of a Cu / Mo-Ti bilayer film etched using the etchant composition of Example 1 of the present invention,
도 3은 본 발명의 실시예1의 식각액 조성물을 이용하여 Cu/Mo-Ti 이중막을 식각한 후, 식각 잔사가 남지 않음을 확인하기 위해 구리 배선 주변 표면을 관찰한 전자주사현미경 사진이다.FIG. 3 is an electron micrograph of the surface of the copper wiring to confirm that no etching residue remains after etching the Cu / Mo-Ti bilayer using the etchant composition of Example 1 of the present invention.
Claims (9)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090077211A KR101586865B1 (en) | 2009-08-20 | 2009-08-20 | Manufacturing method of an array substrate for liquid crystal display |
| PCT/KR2010/005484 WO2011021860A2 (en) | 2009-08-20 | 2010-08-19 | Method of fabricating array substrate for liquid crystal display |
| CN201080037314.9A CN102576170B (en) | 2009-08-20 | 2010-08-19 | Method of fabricating array substrate for liquid crystal display |
| TW099127987A TWI524428B (en) | 2009-08-20 | 2010-08-20 | Method of fabricating array substrate for liquid crystal display |
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| KR101965904B1 (en) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR101966442B1 (en) * | 2011-12-20 | 2019-08-14 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR102092351B1 (en) * | 2014-03-31 | 2020-03-23 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
| KR20170011587A (en) | 2015-07-23 | 2017-02-02 | 동우 화인켐 주식회사 | Etchant composition for copper-containing metal layer and preparing method of an array substrate for liquid crystal display using same |
| KR102343672B1 (en) * | 2015-08-19 | 2021-12-27 | 동우 화인켐 주식회사 | Manufacturing method of an array for liquid crystal display |
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| KR20090079436A (en) * | 2008-01-17 | 2009-07-22 | 동우 화인켐 주식회사 | Manufacturing method of an array substrate for liquid crystal display |
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