KR101574404B1 - Power converter - Google Patents

Abstract

An anode connection plate 66 connecting the anode terminals 28, 36, 48 of the plurality of power converter circuits is provided with slits 100, 102. The positive electrode connection plate includes a first inverter corresponding region 94 connected to the positive electrode terminal 36 of the first inverter as one of the power converter circuits via the positive electrode connecting piece 80a, A second inverter corresponding region 96 that is connected to the positive terminal 48 of the second inverter as one of the converter circuits and a negative terminal of the boost converter as one of the power converter circuits through the positive connection 80c And a positive bus bar portion 78 in which a step-up converter corresponding region 98 connected to the positive bus bar portion 78 is defined. The slits extend from the edge 82 of the anode busbar portion along the boundaries between the corresponding regions.

Description

POWER CONVERTER

The present invention relates to a power converter that converts AC power to DC power and DC power to AC power and converts the voltage.

Power converter circuits, or inverters, that convert DC power to AC power or convert AC power to DC power are known. A power converter circuit, that is, a boost converter, that raises or lowers the DC voltage is also known. A plurality of power converter circuits, which change the characteristics of power (AC / DC, voltage, etc.), are sometimes integrally combined to form a power converter.

One example of the use of a power converter is a hybrid vehicle in which an internal combustion engine and an electric motor are provided as drive sources. A three-phase AC synchronous motor is sometimes used as the motor of a hybrid vehicle. The electric motor also functions as a generator that generates electric power when its rotational axis is driven by the inertia of the vehicle. In the following description, electric devices corresponding to the concept including electric motors, generators, and electric devices capable of functioning as electric motors and generators are referred to as "rotating electric machines ". An inverter is used to drive a rotating electric machine having a DC power source such as a secondary battery mounted on a vehicle or to charge the secondary battery with electric power regenerated by a rotating electric machine. The step-up converter is sometimes provided to step up the terminal voltage of the secondary battery and supply the step-up voltage to the motor. Further, a hybrid vehicle having two rotating electrical machines is known. In this case, the inverter is used for each of the two motors.

Such a power converter circuit is constructed using a semiconductor module including, for example, an IGBT element. Japanese Patent Laid-Open Publication No. 2006-295997 (JP 2006-295997 A) discloses a device in which terminals of a plurality of semiconductor modules constituting a power converter are connected by a bus bar.

When a plurality of power converter circuits are combined to form a power converter and the terminals of the semiconductor modules of the power converter circuits are connected by a bus bar, interference may occur between the power converter circuits due to the surge voltage.

The present invention provides a power converter in which interference between power converter circuits caused by surge voltage can be prevented.

The power converter according to the first aspect of the present invention includes a plurality of power converter circuits each including at least one semiconductor module, and the semiconductor modules are stacked. The power converter has bus bars common to the semiconductor modules connecting the stacked semiconductor modules and the capacitors, and connection members arranged along the edge of each of the bus bars and connecting the terminals of the bus bars to the terminals of the semiconductor modules. Each of the bus bars includes conversion circuit corresponding areas that are virtually divided for each of the power converter circuits including semiconductor modules connected to the bus bar by connecting members. That is, the area on the bus bar to which the terminals of the semiconductor module included in the power converter circuit are connected is defined as a conversion circuit corresponding area. The conversion circuit corresponding areas are defined in a one-to-one correspondence with a plurality of power converter circuits. At least one of the bus bars has a slit extending from its edge along which contact members are arranged along at least one of the boundaries between the conversion circuit corresponding areas.

According to the first aspect, the slits of the bus bars increase the length of the current paths between the power converter circuits, which reduces the influence of the surge voltage on other power converter circuits.

In this aspect, the bus bars having slits in the bus bars may be connected to the positive terminals of the semiconductor modules.

In this aspect, the plurality of power converter circuits may include a first power converter circuit including a first inverter provided corresponding to the first rotating electrical machine, and a second inverter provided corresponding to the second rotating electrical machine. 2 power converter circuit. The conversion circuit corresponding regions of each of the bus bars may include a first inverter corresponding region corresponding to the first inverter and a second inverter corresponding region corresponding to the second inverter and the slits may correspond to the first inverter corresponding region and the second inverter corresponding region May be provided between the regions.

The plurality of power converter circuits may further include a third power converter circuit including a step-up converter including a semiconductor module positioned between the semiconductor module of the first inverter and the semiconductor module of the second inverter. The conversion circuit corresponding regions of each of the bus bars may include slits provided between the boost converter corresponding region and the first inverter corresponding region and the step-up converter corresponding region and between the second inverter corresponding region and the step-up converter corresponding region.

In this aspect, the slit provided between the first inverter corresponding region and the voltage boosting converter corresponding region has a length which may be determined based on the current flowing between the first inverter corresponding region and the voltage increasing converter corresponding region and the upper limit of the heat amount from the bus bar And the slits provided between the second inverter corresponding region and the step-up converter corresponding region have a length that may be determined based on the current flowing between the second inverter corresponding region and the step-up converter corresponding region and the upper limit of the heat amount from the bus bar . That is, each of the slits has a length that may be determined based on the current flowing through the portion of the bus bar that is narrowed by the slit and the upper limit of the amount of heat from this portion. In the power converter circuit in which the semiconductor module included in the step-up converter is interposed between the semiconductor modules included in the two inverters, the length of the slit provided between the step-up converter corresponding area on the bus bar and one of the inverter- May be determined based on the current flowing between the corresponding regions and the upper limit of the calorific value from the bus bar.

The power converter according to the second aspect of the present invention includes a plurality of power converter circuits each including at least one semiconductor module, and the semiconductor modules are stacked. The power converter also has bus bars connecting the terminals of the stacked semiconductor modules and connection members arranged along the edge of each of the bus bars and connecting the corresponding one of the terminals of the bus bar and the terminals of the plurality of power converter circuits. Each of the bus bars includes conversion circuit corresponding areas defined for each of the power converter circuits including semiconductor modules connected to the bus bar by connecting members. At least one of the bus bars includes a slit extending from an edge of the bus bar along at least one of the boundaries between the conversion circuit corresponding areas.

The power converter according to the third aspect of the present invention includes a plurality of power converter circuits each including at least one semiconductor module, and the semiconductor modules are stacked. The power converter also includes bus bars connecting the terminals of the stacked semiconductor modules and a connection member arranged equidistantly along the edges of each of the bus bars and connecting the corresponding one of the terminals of the bus bar and the terminals of the plurality of power converter circuits. Respectively. Each of the bus bars includes conversion circuit corresponding areas defined for each of the power converter circuits including semiconductor modules connected to the bus bar by connecting members. At least one of the bus bars has a bend provided along at least one of the boundaries between adjacent conversion circuit corresponding areas configured to increase the length of the current paths between adjacent conversion circuit corresponding areas.

The power converter according to the fourth aspect of the present invention includes a plurality of power converter circuits, each of which includes at least one semiconductor module, and the semiconductor modules are stacked. The power converter also includes connection plates connecting the terminals of the stacked semiconductor modules. Each of the connection plates includes bus bar portions extending in a direction in which the semiconductor modules are stacked, and connection pieces extending from the bus bar portion and connecting terminals of the bus bar portion and the semiconductor modules. The bus bar portion includes conversion circuit corresponding areas defined for each of the power converter circuits including semiconductor modules connected via connection pieces. At least one of the bus bar portions is formed along at least one of the boundaries between the conversion circuit corresponding areas and has a slit extending beyond the bases of the connection pieces.

According to these aspects, the means for increasing the length of the current path between the two power converter circuits on the bus bar reduces the interference between the two power converter circuits caused by the surge voltage.

The features, advantages, and technical and industrial significance of the exemplary embodiments of the present invention will be described below with reference to the accompanying drawings, wherein like reference numerals designate like elements.
1 is a circuit configuration diagram including the power converter of the present embodiment.
2 is a perspective view showing a part of the power converter of the present embodiment.
3 is a side sectional view showing a part of the power converter of the present embodiment.
4 is a perspective view showing the anode connection plate and the cathode connection plate.
5 is a side view showing the anode connection plate and the cathode connection plate.
6 is a plan view of the anode connection plate.
7 is a plan view of the cathode connection plate.
8 is a cross-sectional view showing another configuration of the positive electrode connection plate.
9 is a plan view showing another configuration of the negative electrode connection plate.
Fig. 10A is a plan view showing still another configuration of the positive electrode connection plate, and Fig. 10B is a plan view showing still another configuration of the negative electrode connection plate.
11 is a plan view showing still another configuration of the positive electrode connection plate.
12 is a side sectional view showing a part of a power converter of a different configuration.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 is a circuit configuration diagram including the power converter 10 of the present embodiment. 1 is a diagram showing a circuit configuration of a control system for driving first and second rotating electrical machines 12 and 14 serving as drive motors of a hybrid vehicle. The two rotating electric machines 12 and 14 are rotatably driven by the electric power from the secondary battery 16 and the secondary battery 16 is driven by the electric power generated by the rotating electric machines 12 and 14 Is charged. It is the power converter 10 that is used to drive the rotating electric machines 12 and 14 and charge the secondary battery 16. The power converter 10 includes a step-up converter 18 for stepping up the voltage of the secondary battery 16 and a step-down converter 18 for converting DC power from the secondary battery 16 into three-phase AC power, 12, and 14) to DC power. ≪ RTI ID = 0.0 > [0029] < / RTI > A first inverter 20 is provided for the first rotating electrical machine 12 and a second inverter 22 is provided for the second rotating electrical machine 14. [ Step-up converter 18 is a power converter or circuit that changes the characteristic value of power, voltage, and first and second inverters 20 and 22 are power converters or circuits that change the characteristics of power, AC or DC . Both of the two rotating electric machines 12 and 14 of the present embodiment function as electric motors and generators, but they may be rotating electric machines functioning as either an electric motor or a generator.

The step-up converter 18 has at least one semiconductor module 26 including power transistors such as a reactor 24 and IGBTs. The semiconductor module 26 includes a positive terminal 28 connected to the positive terminals of the first and second inverters 20 and 22, a negative terminal 30 connected to the negative terminals of the inverters 20 and 22, And an output pole terminal 32 connected to the reactor 24. [

The first inverter 20 has three semiconductor modules 34 of the same structure, each including power transistors such as IGBTs. Three semiconductor modules 34 correspond to three phases of three-phase AC power supplied to the first rotating electrical machine 12, respectively. Each of the semiconductor modules 34 has a positive terminal 36, a negative terminal 38, and an output terminal 40. The positive terminal terminals 36 of the three semiconductor modules 34 are connected to each other by a positive bus 42 and are also connected to the positive terminal 28 of the boost converter 18 by a positive bus 42. The negative terminal terminals 38 of the three semiconductor modules 34 are connected to each other by the negative bus 44 and are also connected to the negative terminal 30 of the boost converter 18 by the negative bus 44. Three output pole terminals 40 are connected to three-phase power lines, respectively, which supply power to the coils of the first rotating electrical machine 12.

The second inverter 22 has three semiconductor modules 46 of the same structure, each including power transistors such as IGBTs. Three semiconductor modules 46 correspond to three phases of three-phase AC power supplied to the second rotating electrical machine 14, respectively. Each of the semiconductor modules 34 has a positive terminal 48, a negative terminal 50, and an output terminal 52. The positive terminal terminals 48 of the three semiconductor modules 46 are connected to each other by a positive bus 42 and are also connected to the positive terminal 28 of the boost converter 18 by a positive bus 42. The cathode terminals 50 of the three semiconductor modules 46 are connected to each other by a cathode bus 44 and are also connected to a cathode terminal 30 of the voltage step up converter 18 by a cathode bus 44. Three output pole terminals 52 are connected to the three-phase power lines, respectively, which supply power to the coils of the second rotating electrical machine 14.

A smoothing capacitor 54 is interposed between the anode bus 42 and the cathode bus 44. The power converter 10 is also provided with a control device 56 for controlling the operation of the step-up converter 18 and the first and second inverters 20 and 22. Control device 56 controls the operation of voltage step-up converter 18 and first and second inverters 20 and 22 by controlling the power transistors of semiconductor modules 26, 34 and 46.

2 is a perspective view showing an overview of a part of the power converter 10. The step-up converter 18 and the semiconductor modules 26, 34, and 46 of the first and second inverters 20 and 22 are stacked to form the semiconductor module unit 58. Preferably, the semiconductor modules 26, 34 and 46 are stacked at regular intervals. The three semiconductor modules 34 of the first inverter 20 and the three semiconductor modules 46 of the second inverter 22 are connected to both sides of the three semiconductor modules 26 of the voltage- . The number of semiconductor modules 34 of the first and second inverters is three because it corresponds to the number of phases of the three-phase AC power, while the number of semiconductor modules 26 of the step-up converter 18 is three But are not limited to dogs. The number of semiconductor modules 26 depends on the allowable current value of the elements, such as transistors, included in the semiconductor modules 26. [ The current per device can be reduced by increasing the number of semiconductor modules, and the number of modules is determined based on the use conditions.

The semiconductor modules 26, 34, and 46 are apparently identical and the terminals are located on the top surfaces of the semiconductor modules 26, 34, and 46 shown in FIG. In the case of the semiconductor modules 34 of the first inverter, the positive terminal 36, the negative terminal 38, and the output terminal 40 are arranged in this order from the rear of FIG. 2 to the front. Although not shown for simplicity, in the case of the semiconductor modules 26 of the step-up converter and the semiconductor modules 46 of the second inverter, the anode terminal 28 or 48, the cathode terminal 30 or 50, 32 or 52) are also arranged in this order from the rear of Fig. 2 to the front. Electrical wiring connected to the output terminal terminals is not shown. When the semiconductor modules 26, 34 and 46 are stacked at regular intervals, the terminals are also arranged at regular intervals.

The semiconductor module unit 58 also has a cooler for cooling the semiconductor modules 26, 34 and 46. The cooler includes cooling plates 60 and cooling liquid delivery pipes 62 and 64 arranged to sandwich each of the semiconductor modules 26, 34 and 46. The cooling plates 60 are hollow and the spaces in the cooling plates 60 are in communication with the cooling liquid delivery pipes 62 and 64. The cooling liquid delivered through one cooling liquid delivery pipe 62 is distributed to the cooling plates 60 and flows in each of the cooling plates 60 and reaches another cooling liquid delivery pipe 64. The cooling liquid flowing in the cooling plates 60 absorbs heat from the semiconductor modules 26, 34 and 46 to cool the modules in these half-ways. The cooling liquid that flows out to the cooling liquid transfer pipe 64 is sent to a radiator (not shown) through the cooling liquid transfer pipe 64 and is cooled by the radiator and then returned to the cooling plates 60 through the cooling liquid transfer pipe 62 .

The anode terminals 28, 36 and 48 of the semiconductor modules are connected to the common anode connection plate 66. The positive electrode connection plate 66 is fixed and supported on the upper surface of the fixing table 68. The cathode terminals 30, 38 and 50 are connected to the common cathode connection plate 70. The cathode connection plate 70 (see Figs. 3 and 4) is fixed and supported on the lower surface of the fixing table 68. Therefore, the cathode connection plate 70 is hidden behind the fixing table 68 and can not be seen in Fig. The positive electrode connection plate 66 is connected to the capacitor positive terminal 72 and the negative electrode connection plate 70 is connected to the capacitor negative terminal 74. Each of the capacitor positive terminal 72 and the capacitor negative terminal 74 is connected to the capacitor 54 housed in the capacitor case 76 in the case.

3 is a view showing a section perpendicular to the direction in which the semiconductor modules 26, 34, and 46 are stacked. As shown in Fig. 3, the cathode connection plate 70 is on the lower surface of the fixing table 68. As shown in Fig. It is understood that the capacitor positive terminal 72 and the capacitor negative terminal 74 enter the capacitor case 76 and are connected to the capacitor 54.

Figs. 4 and 5 are views showing only the anode connection plate 66 and the cathode connection plate 70. Fig. 6 is a plan view of the anode connection plate 66, and Fig. 7 is a plan view of the cathode connection plate 70. Fig.

The anode connection plate 66 includes a plate portion 78 extending in the direction in which the semiconductor modules are stacked and an anode extending from the edge of the plate portion 78 opposite to the anode terminals 28, And includes connecting pieces (80). The plate-like portion 78 is a common conductor for the positive terminals 28, 36 and 48 of the semiconductor modules and functions as a bus bar. This portion is hereinafter referred to as "anode bus bar portion 78 ". The anode bus bar portion 78 is a portion enclosed by the one-dot chain line in Fig. The positive electrode connection pieces 80 provided for each of the positive electrode terminals 28, 36 and 48 are aligned along the direction in which the semiconductor modules are stacked and connected to the corresponding one of the positive electrode terminals. When the positive electrode terminals 28, 36 and 48 are arranged at equal intervals, it is also preferable that the positive electrode connection pieces 80 are also arranged at regular intervals. Each of the anode connection pieces 80 has a leading end portion 81 formed by extending from the edge 82 of the anode bus bar portion 78 to extend the bus bar portion 78 and to bend its extended end. The tip portion 81 extends perpendicular to the plate surface of the bus bar portion 78, that is, parallel to the anode terminals 28, 36 and 48 of the semiconductor modules. The surface of the tip end portion 81 of each of the positive electrode connection pieces is fixed in close contact with the plate surface of the corresponding one of the positive electrode terminals 28,

The positive bus bar portion 78 has capacitor connection points 84 to which the capacitor positive terminal 72 is coupled. Two capacitor connection points 84 are provided and a recess 85 formed by cutting the edge opposite the edge 82 where the anode connection pieces 80 extend is provided between the capacitor connection points 84 do. The capacitor positive terminal 72 and the positive electrode connection plate 66 are coupled to each other by bolts as shown in Fig.

The anode connection plate 66 functions as a cathode bus 42 connecting the anode terminals 28, 36 and 48 of the semiconductor modules to the capacitor anode terminal 72. The anode bus bar portion 78 and the anode connection pieces 80 may be integrally formed from one sheet metal, for example, by punching and bending. The separately formed connection members may be connected to the anode bus bar portion formed from the sheet metal. The connecting members may be formed from a material other than sheet metal, such as a lead wire.

The negative electrode connection plate 70 includes a plate-like portion 86 extending in the direction in which the semiconductor modules are stacked, and a negative electrode 86 extending from the edge of the plate-like portion 86 opposite to the negative terminals 30, And includes connecting pieces 88. The plate-like portion 86 is a common conductor for the negative terminals 30, 38 and 50 of the semiconductor modules and functions as a bus bar. This portion is hereinafter referred to as "cathode bus bar portion 86 ". The negative bus bar portion 86 is a portion enclosed by a one-dot chain line in Fig. The negative electrode connection pieces 88 provided for each of the negative electrode terminals 30, 38 and 50 are aligned along the direction in which the semiconductor modules are stacked and connected to the corresponding one of the negative electrode terminals. When the cathode terminals 30, 38 and 50 are arranged at regular intervals, it is also preferable that the cathode connection pieces 88 are also arranged at equal intervals. Each of the cathode connection pieces 88 has a tip portion 89 that extends from the edge 90 of the cathode bus bar portion 86 to extend the bus bar portion 86 and to bend its extended end. The tip portion 89 extends perpendicular to the plate surface of the bus bar portion 86, that is, parallel to the cathode terminals 30, 38 and 50 of the semiconductor modules. The surface of the tip end portion 89 of each of the negative electrode connection pieces is fixed in close contact with the plate surface of the corresponding one of the negative electrode terminals 30, 38 and 50.

The negative bus bar portion 86 has capacitor connection points 92 to which the capacitor negative terminal 74 is coupled. One capacitor connection point 92 is provided at a position corresponding to the position of the concave portion 85 of the positive electrode connection plate 66. [ Accordingly, the capacitor connection point 92 is exposed upward as shown in Fig. 4, and the cathode connection plate 70 can be fixed with a bolt from above as shown in Fig. 7, the width of the cathode bus bar portion 86 is large around the capacitor connection point 92 and small on both sides. The narrow portions provide spaces through which the bolts used to secure the positive electrode connection plate 66 extend. The capacitor negative electrode terminal 74 and the negative electrode connection plate 70 are coupled to each other with a bolt as shown in Fig.

The anode bus bar portion 86 has two capacitor connection points 84 and the cathode bus bar portion 86 has one capacitor connection point 92. As described above, Can be reduced in size compared to the case where both the anode bus bar portion 78 and the cathode bus bar portion 86 have two capacitor connection points. The anode bus bar portion may have one capacitor connection point and the cathode bus bar portion may have two capacitor connection points.

The cathode connection plate 70 functions as a cathode bus 44 connecting the cathode terminals 30, 38 and 50 of the semiconductor modules with the capacitor cathode terminal 74. The cathode bus bar portion 86 and the cathode connection pieces 88 may be integrally formed from a sheet of sheet metal, for example, by punching and bending. The separately formed connecting members may be connected to the cathode bus bar portion formed from the sheet metal. The connecting members may be formed from a material other than sheet metal, such as a lead wire.

The anode terminals 28, 36 and 48 of the semiconductor modules are shown in Fig. A ", "b" and "c" are attached to the reference numeral 80 to distinguish the anode connection pieces 80 according to the types of semiconductor modules to which the connection pieces are connected. That is, the positive polarity connection pieces connected to the positive polarity terminals 36 of the semiconductor modules of the first inverter 20 are designated by reference numeral 80a, and the positive polarity terminals 48 of the semiconductor modules of the second inverter 22 And the positive polarity connection pieces connected to the positive terminal terminals 28 of the semiconductor modules of the step-up converter 18 are designated by the reference numeral 80c.

For convenience of the following description, the anode bus bar portion 78 is divided into regions 94, 96, and 98 corresponding respectively to the anode connecting pieces 80a, 80b, and 80c, . The areas are, for example, three areas surrounded by dotted lines as shown in Fig. The boundaries between the regions 94, 96 and 98 are shown perpendicular to the edge 82 in Fig. 6 for convenience. The area 94 of the portion of the positive bus bar to which the positive electrode connection pieces 80a are connected is a region defined in correspondence with the semiconductor modules 34 of the first inverter 20, Quot;). ≪ / RTI > The area 96 of the portion of the positive bus bar to which the positive electrode connection pieces 80b are connected is a region defined in correspondence with the semiconductor modules 46 of the second inverter 22, Quot;). ≪ / RTI > The region 98 of the anode bus bar portion to which the anode connection pieces 80c are connected is an area defined corresponding to the semiconductor modules 26 of the step-up converter 18, . The anode bus bar portion 78 has three imaginary regions 94, 96 and 98 arranged in the longitudinal direction of the bus bar portion, i.e. in the direction in which the semiconductor modules are stacked.

The power converter circuits, i.e., the first and second inverters 20 and 22 and the boost converter 18, are individually controlled. The terminals of the semiconductor modules of these power converter circuits are all connected to the anode and cathode connection plates 66 and 70. Thus, the surge voltage generated in one power converter circuit may affect other power converter circuits through the connection plates 66 and 70 and interfere with the control. In particular, in the case of the semiconductor module unit 58, since the semiconductor modules 26, 34 and 46 and the cooling plates 60 are laminated to simplify the structure of the cooler and the overall size is reduced, Is small. The interference of the surge voltage tends to occur between the first inverter 20 and the second inverter 22.

In the power converter 10, the anode connection plate 66 has means for increasing the length of the current paths between the power converter circuits to prevent interference between the power converter circuits. Particularly, the bus bar portion 78 of the anode connection plate 66 has a slit 100 between the first inverter corresponding region 94 and the step-up converter corresponding region 98, and a slit 100 between the second inverter corresponding region 96 and the step- And the slits 102 between the converter corresponding regions 98. [ The slit 100 extends from the edge 82 of the anode bus bar portion 78, opposite the anode terminals of the semiconductor modules, along the boundary between the first inverter corresponding region 94 and the boost converter corresponding region 98 Lt; / RTI > The slit 102 extends inwardly from the edge 82 of the anode bus bar portion along the boundary between the second inverter corresponding region 96 and the boost converter corresponding region 98. As a result, the lengths of the current paths between the power converter circuits increase because they run around the slit 100 or 102. The current paths between the corresponding regions 94, 96, and 98, even when the anode connection pieces 80 as the connection members are arranged at equal intervals, are shorter than the current paths between the contact members included in one corresponding region It can be longer. Since the slits 100 and 102 increase the length of the current paths between the power converter circuits, the surge voltage generated in one power converter circuit is attenuated while being transferred to the other power circuit, thereby preventing interference.

The slits 100 and 102 also include a positive bus bar portion 78 having two capacitor connection points 84 and a negative bus bar portion 86 having one capacitor connection point 92, And the capacitor connection points 84 are disposed in the vicinity of the extension of the slits 100 and 102. In addition, Thus, for example, the distance from each terminal to the capacitor connection points 84 is greater when the capacitor connection points 84 are located together at the location of the end of the bus bar portion in the direction in which the connection members are aligned Since the length of the current path between the terminal facing the first inverter corresponding region 94 and the terminal facing the step-up converter corresponding region 98 can be longer by the slit, the influence of the surge voltage Can be suitably reduced.

The length of the slit 100 can be determined based on the current flowing between the first inverter corresponding region 94 and the step-up converter corresponding region 98 and the upper limit of the heat amount from the anode connection plate 66. [ The heat resistance requirements for each of the components and members around the anode connection plate 66 are determined and the upper limit of the amount of heat generated from the anode connection plate 66 can be set to meet those requirements. When the length of the slit 100 is increased, the width of the portion of the anode bus bar portion 78 which is narrowed due to the slit 100 is reduced and the amount of heat generated from this portion is increased. The length of the slit 100 is determined so that the calorific value from that portion can not exceed the upper limit determined as described above. The length of the slit 100 can be determined in the same manner.

The anode connection pieces 80 of the anode connection plate 66 can be regarded as being divided and formed by forming a plurality of slits along the edge of the connection plate. However, slits 100 and 102 must be distinguished from these slits. Each of the slits 100 and 102 further extends into the connection plate from the bottom of one of the slits dividing the connecting pieces.

8 is a diagram illustrating another example of a means for increasing the length of current paths between power converter circuits. Between the first inverter corresponding region 94 and the boost converter corresponding region 98, a curved portion 104 is provided instead of the slit 100 described above. Between the second inverter corresponding region 96 and the step-up converter corresponding region 98, a curved portion 106 is provided instead of the slit 102 described above. Each of the curved portions 104 and 106 is a portion formed by expanding a portion of the flat plate surface of the anode bus bar portion 78 in the vicinity of the edge 82 of the anode bus bar portion 78. By providing the curved portions 104 and 106, the length of the current paths between the power converter circuits can be longer than the length in the plate-like planar configuration. Further, even when the connecting members are arranged at regular intervals, the current paths between the corresponding regions 94, 96 and 98 can be longer than the rectifying paths between the connecting members included in one corresponding region. When curved along the curved portions 104 and 106, the current paths can become longer and interference caused by the surge voltage is prevented.

In the power converter 10, the negative electrode connection plate 70 does not have means for increasing the length of the current paths such as slits, but the negative electrode connection plate 70 has the same means as in the case of the positive electrode connection plate 66 .

9 is a view showing a configuration of a cathode connection plate 108 provided with slits. Components common to the cathode connection plate 70 are designated by the same reference numerals, and a description thereof is omitted. A ", "b" and "c" are attached to the reference numeral 88 to distinguish the negative electrode connection pieces 88 according to the types of semiconductor modules to which the connecting pieces are connected. That is, the negative electrode connection pieces connected to the negative electrode terminals 38 of the semiconductor modules of the first inverter 20 are designated by reference numeral 88a and the negative electrode terminals 50 of the semiconductor modules of the second inverter 22 are designated by reference numeral 88a. The negative electrode connection pieces connected to the negative electrode terminals 30 of the semiconductor modules of the step-up converter 18 are designated by reference numeral 88c.

For convenience of the following description, the negative bus bar portion 86 is divided into regions 110, 112, and 114 corresponding to the negative electrode connection pieces 88a, 88b, and 88c, respectively, . For example, the areas are areas enclosed by a one-dot chain line as shown in FIG. The boundaries between regions 110, 112, and 114 are shown perpendicular to edge 90 of FIG. 9 for convenience. The region 110 of the cathode bus bar portion to which the cathode connection pieces 88a are connected is an area defined in correspondence with the semiconductor modules 34 of the first inverter 20, Quot;). The region 112 of the cathode bus bar portion to which the cathode connection pieces 88b are connected is an area defined in correspondence with the semiconductor modules 46 of the second inverter 22 and is hereinafter referred to as a "second inverter corresponding region 112 Quot;). The region 114 of the cathode bus bar portion to which the cathode connection pieces 88c are connected is a region defined in correspondence with the semiconductor modules 26 of the step-up converter 18, and hereinafter the "step-up converter corresponding region 114" . The cathode bus bar portion 86 has three imaginary regions 110, 112 and 114 arranged in the longitudinal direction of the bus bar portion, i.e. in the direction in which the semiconductor modules are stacked.

The cathode connection plate 108 also has a means for increasing the length of the current paths between the power converter circuits to prevent interference between the power converter circuits, such as in the case of the anode connection plate 66. Particularly, the bus bar portion 86 of the cathode connection plate 108 has a slit 116 between the first inverter corresponding region 110 and the step-up converter corresponding region 114 and a slit 116 between the second inverter corresponding region 112 and the step- And a slit 118 between the converter corresponding regions 114. [ The slit 116 extends from the edge 90 of the negative bus bar portion 86, opposite the negative terminals of the semiconductor modules, along the boundary between the first inverter corresponding region 110 and the boost converter corresponding region 114 Lt; / RTI > The slit 118 extends inwardly from the edge 90 of the portion of the negative bus bar along the boundary between the second inverter corresponding region 112 and the boost converter corresponding region 114. As a result, the length of the current paths between the power converter circuits increases because they run around the slit 116 or 118. [ The current paths between the corresponding regions 110, 112, and 114, even when the cathode connection pieces 88 as the connection members are arranged at equal intervals, are shorter than the current paths between the contact members included in one corresponding region It can be longer. Since the slits 116 and 118 increase the length of the current paths between the power converter circuits, the surge voltage generated in one power converter circuit is attenuated while being transferred to the other power circuit, thereby preventing interference. The length of the slits 116 and 118 is determined by the thermal resistance requirements of the components around the cathode connection plate 108 and the cathode connection plate 108 as in the case of the slits 100 and 102 of the anode connection plate 66. [ Based on the amount of heat generated by the heat exchanger.

It is also possible to employ a negative electrode connection plate 108 having a slit on the negative electrode side and a connecting plate having no slits on the positive electrode side.

Further, when the slits are provided in both of the positive electrode connection plate and the negative electrode connection plate, the positive electrode connection plate and the negative electrode connection plate may each have one slit. One example is shown in Figures 10A and 10B. The components common to the above-described positive electrode and negative electrode connection plates are designated by the same reference numerals, and a description thereof is omitted. The anode connection plate 120 has a slit 100 between the first inverter corresponding region 94 and the step-up converter corresponding region 98 and a slit 100 between the second inverter corresponding region 96 and the step-up converter corresponding region 98 It does not have a slit. In contrast, the negative electrode connection plate 122 does not have a slit between the first inverter corresponding region 110 and the step-up converter corresponding region 114, and between the second inverter corresponding region 112 and the step-up converter corresponding region 114 As shown in Fig. In contrast to the embodiment shown in Figs. 10A and 10B, the anode connection plate may have only the same slit 102 as the slit of the anode connection plate 66 shown in Fig. 6, Only the slit 116 that is the same as the slit of the cathode connection plate 108 may be used. When the slits are provided along a portion of a plurality of boundaries, the slits are preferably provided between the power converter circuits on the anode side and the cathode side, as described above.

Although the slits 100 and 102 are formed linearly in a direction perpendicular to the stacking direction of the semiconductor modules in the above embodiment, the slits 100 and 102 are inclined with respect to the direction perpendicular to the direction in which the semiconductor modules are stacked Or may be formed in a curved or zigzag configuration. For example, two slits 126 and 128 may extend inwardly from edge 82, such as in the anode connection plate 124 shown in FIG. 11, As the distance increases. Among the components of the anode connection plate 124, the same components as those of the anode connection plate 66 shown in FIG. 6 are designated by the same reference numerals and their description is omitted. Preferably, the slits 126 and 128 are inclined toward the capacitor connection points 84.

The two slits may have different lengths.

The arrangement of the power converter circuits (the first converter, the boost converter and the second converter) is not limited to the arrangement of the above embodiment. For example, the semiconductor module group constituting the first converter, the semiconductor module group constituting the second inverter, and the semiconductor module group constituting the voltage step-up converter may be stacked or arranged in this order. In this case, the length of the slit between the area corresponding to the second inverter and the area corresponding to the step-up converter may be smaller than the length of the slit between the area corresponding to the first inverter and the area corresponding to the second inverter, The slit may not be provided between the corresponding regions. In this case, even when the influence of the surge voltage from the step-up converter is large, the influence of the surge voltage can be appropriately suppressed without increasing the length of the current paths because the step-up converter and the first inverter are separated from each other on the bus bar. The semiconductor module group constituting the first inverter and the semiconductor module group constituting the second inverter may be inverted with respect to each other.

Although the power converter 10 has three power converter circuits, namely two inverters and one step-up converter, the present invention is applicable to a power converter having two or more power converter circuits. The means for increasing the lengths of the current paths, such as the slits, is provided between the conversion circuit corresponding areas on the bus bar, corresponding to the power converter circuits that are prone to interference of the surge voltage. Slits, etc. may be provided along all boundaries between adjacent conversion circuit corresponding areas.

In the above embodiment, the semiconductor modules 26, 34 and 46 each have two power transistors and each have positive terminals 28, 36 and 48, negative terminals 30, 38 and 50, Pole terminals 32, 40, and 52, respectively. However, the semiconductor module unit may be configured by combining semiconductor modules each having one power transistor. For example, a configuration may be used in which two semiconductor modules each having one power transistor are used in combination as shown in Fig. Specifically, each of the above-described semiconductor modules 34 may be replaced by two semiconductor modules 34A and 34B each having one power transistor. One semiconductor module 34A includes a positive terminal 36 and an output terminal 40A and the other semiconductor modules 34B includes a negative terminal 38 and an output terminal 40B. The output electrode terminal 40A and the output electrode terminal 40B are electrically connected to each other. Similarly, the semiconductor modules 26 and 46 may be configured by combining two semiconductor modules 26A and 26B, respectively, and two semiconductor modules 46A and 46B. Also, the three semiconductor modules 34 of the first inverter 20, which are provided for each phase, may be integrated. That is, a semiconductor module having power transistors for three phases may be constructed. And the same is applied to the second inverter 22.

The power converter of the present invention may have the following configuration. (1) The power converter has a first inverter having three semiconductor modules, a second inverter having three semiconductor modules, and connection plates connecting the terminals of the semiconductor modules constituting the first and second inverters to the capacitor. The semiconductor modules of the first and second inverters are stacked, each of the connection plates comprises a bus bar portion extending in a direction in which the semiconductor modules are stacked, and a bus bar portion extending from the bus bar portion and connecting the bus bar portion to the terminals of the semiconductor modules ≪ / RTI > The bus bar portion is a portion of the first inverter corresponding to the first inverter corresponding region which has the connecting pieces connected to the terminals of the semiconductor modules of the first inverter and the second inverter which is the portion having the connecting pieces connected to the terminals of the semiconductor modules of the second inverter Corresponding area. The bus bar portion extends beyond the bases of the connecting pieces and has a slit provided between the first inverter corresponding region and the second inverter corresponding region.

(2) In the power converter according to (1), at least one semiconductor module included in the step-up converter is positioned between the semiconductor modules of the first inverter and the semiconductor modules of the second inverter in the direction in which the semiconductor modules are stacked . Each of the connection plates may have a connecting piece for connecting the terminal of the semiconductor module of the voltage step-up converter and the bus bar part, and the bus bar part may be a part corresponding to the step-up converter part having the connecting piece connected to the terminal of the semiconductor module of the step- . Each of the connection plates may have at least one slit between the first inverter corresponding region and the step-up converter corresponding region or between the second inverter corresponding region and the step-up converter corresponding region.

Alternatively, the power converter of the present invention may have the following configuration. (3) The power converter has a first inverter having three semiconductor modules, a second inverter having three semiconductor modules, and connection plates connecting the terminals of the semiconductor modules constituting the first and second inverters to the capacitor. The semiconductor modules are laminated to each other and each of the connection plates is divided by first slits formed along the edge thereof extending in the direction in which the semiconductor modules are stacked and connected to the corresponding terminals of the terminals of the semiconductor modules And the second slit extends beyond at least one of the first slits, which is located between the connecting pieces associated with the first inverter and the connecting pieces associated with the second inverter.

Alternatively, the power converter of the present invention may have the following configuration. (4) The power converter includes a first inverter having three semiconductor modules, a second inverter having three semiconductor modules, a step-up converter having at least one semiconductor module, and a semiconductor module of the first and second inverters and step- And connection plates connecting the terminals of the capacitors and the capacitors. The semiconductor modules are stacked such that the semiconductor modules of the step-up converter are located between the semiconductor modules of the first inverter and the semiconductor modules of the second inverter. Each of the connection plates has connection pieces which are divided by first slits formed along the edge thereof, extending in a direction in which the semiconductor modules are stacked, and connected to corresponding terminals of the terminals of the semiconductor modules, At least one of the first slits dividing the connecting pieces related to the one-inverter and the connecting pieces related to the voltage-rising converter and the first slits dividing the connecting pieces related to the second inverter and the connecting pieces related to the voltage- It extends beyond.

Claims (11)

As a power converter,
A plurality of power converter circuits, each power converter circuit comprising at least one semiconductor module (34, 46, 26), wherein the plurality of power converter circuits,
Bus bars (78, 86) common to the semiconductor modules connecting the stacked semiconductor modules and a capacitor (54), and
(80, 88) arranged along edges (82, 90) of each of said bus bars and connecting the edges of said bus bars to the terminals (36, 48, 28, 38, 50, 30) ),
Each of said bus bars comprising conversion circuit corresponding areas (94, 96, 98; 110, 112, 114) defined for each of said power converter circuits comprising said semiconductor modules connected to said bus bar by said connecting members, / RTI >
At least one of the bus bars includes slits (100, 102; 116, 118; 100, 118; 126, 128) extending from the edges of the bus bars along at least one of the boundaries between the conversion circuit- and,
Wherein the plurality of power converter circuits comprises a first power converter circuit comprising a first inverter (20) provided corresponding to a first rotating electrical machine (12) and a second power converter circuit comprising a second power converter circuit And a second power converter circuit including an inverter (22)
The conversion circuit corresponding regions (94, 96, 98; 110, 112, 114) of each of the bus bars include a first inverter corresponding region (94; 110) corresponding to the first inverter (96; 112) corresponding to the first inverter corresponding area (96) and the second inverter corresponding area (96) corresponding to the second inverter corresponding area (96), and the slit is provided between the first inverter corresponding area And a power converter. The method according to claim 1,
Wherein a bus bar (78) having the slits (100, 102) of the bus bars is connected to the positive terminals (36, 28, 48) of the semiconductor modules. The method according to claim 1,
Wherein a bus bar (86) having the slits (116, 118) of the bus bars is connected to negative terminal (38, 50, 30) of the semiconductor modules. delete The method according to claim 1,
Wherein the plurality of power converter circuits comprises a step-up converter (18) including a semiconductor module (26) positioned between a semiconductor module (34) of the first inverter (20) Further comprising a third power converter circuit,
Wherein the conversion circuit corresponding regions (94, 96, 98; 110, 112, 114) of each of the bus bars include a boost converter corresponding region (98; 114), the slits (100, 102; 100 and 118 are connected between the first inverter corresponding region 94 and the step-up converter corresponding region 98 and the second inverter corresponding region 96 and the step-up converter corresponding region 98; ). ≪ / RTI > 6. The method of claim 5,
The slits 100 provided between the first inverter corresponding region 94 and the step-up converter corresponding region 98 and the slit 100 between the first inverter corresponding region and the voltage step- And a length determined based on an upper limit of a calorific value from the bus bar,
The slits 102 and 118 provided between the second inverter corresponding region 96 and the step-up converter corresponding region 98 and 114 are arranged between the second inverter corresponding region and the step-up converter corresponding region, And a length determined based on an upper limit of a calorific value from the bus bar. The method according to claim 1,
Wherein each of the bus bars connected to the positive terminals of the semiconductor modules and each of the bus bars connected to the negative terminals of the semiconductor modules has one of the slits. As a power converter,
A plurality of power converter circuits, each power converter circuit comprising at least one semiconductor module (34, 46, 26), wherein the plurality of power converter circuits,
Bus bars (78, 86) connecting the terminals of the stacked semiconductor modules, and
And a plurality of power converter circuits arranged along edges (82, 90) of each of the bus bars and connecting the corresponding one of the terminals of the plurality of power converter circuits (36, 48, 28, 38, 50, 30) Includes connecting members (80, 88)
Each of said bus bars comprising conversion circuit corresponding areas (94, 96, 98; 110, 112, 114) defined for each of said power converter circuits comprising said semiconductor modules connected to said bus bar by said connecting members, / RTI >
At least one of the bus bars includes slits (100, 102; 116, 118; 100, 118; 126, 128) extending from the edges of the bus bars along at least one of the boundaries between the conversion circuit- and,
Wherein the plurality of power converter circuits comprises a first power converter circuit comprising a first inverter (20) provided corresponding to a first rotating electrical machine (12) and a second power converter circuit comprising a second power converter circuit And a second power converter circuit including an inverter (22)
The conversion circuit corresponding regions (94, 96, 98; 110, 112, 114) of each of the bus bars include a first inverter corresponding region (94; 110) corresponding to the first inverter (96; 112) corresponding to the first inverter corresponding area (96) and the second inverter corresponding area (96) corresponding to the second inverter corresponding area (96), and the slit is provided between the first inverter corresponding area And a power converter. As a power converter,
A plurality of power converter circuits, each power converter circuit comprising at least one semiconductor module (34, 46, 26), wherein the plurality of power converter circuits,
Bus bars (78, 86) connecting the terminals of the stacked semiconductor modules, and
And a plurality of power converter circuits arranged at regular intervals along the edges of the bus bars and each having a corresponding one of the terminals of the bus bar and the terminals of the plurality of power converter circuits (36, 48, 28, 38, 50, 30) And connecting members (80, 88) for connecting the connecting members
Each of said bus bars comprising conversion circuit corresponding areas (94, 96, 98; 110, 112, 114) defined for each of said power converter circuits comprising said semiconductor modules connected to said bus bar by said connecting members, / RTI >
Wherein at least one of the bus bars comprises at least one of the boundaries between the adjacent conversion circuit corresponding regions (94, 96, 98; 110, 112, 114) configured to increase the length of current paths between adjacent conversion circuit- A curved portion 104, 106 provided along one,
Wherein the plurality of power converter circuits comprises a first power converter circuit comprising a first inverter (20) provided corresponding to a first rotating electrical machine (12) and a second power converter circuit comprising a second power converter circuit And a second power converter circuit including an inverter (22)
The conversion circuit corresponding regions (94, 96, 98; 110, 112, 114) of each of the bus bars include a first inverter corresponding region (94; 110) corresponding to the first inverter And a second inverter corresponding area 96 (112) corresponding to the second inverter corresponding area (96) 112, wherein a slit is provided between the first inverter corresponding area (94; 110) and the second inverter corresponding area Features a power converter. 10. The method of claim 9,
Wherein the curvature is formed by inflating a portion of the flat surface of the bus bar at an edge of the bus bar. As a power converter,
A plurality of power converter circuits, each of the power converter circuits comprising at least one semiconductor module (34, 46, 26), the semiconductor modules being stacked;
And connection plates (66, 70) connecting the terminals of the stacked semiconductor modules,
Wherein each of the connection plates comprises:
Bus bar portions 78, 86 extending in the direction in which the semiconductor modules are stacked, and
(80, 88) extending from the bus bar portion and connecting the bus bar portion and the terminals of the semiconductor modules,
The bus bar portion includes conversion circuit corresponding areas (94, 96, 98; 110, 112, 114) defined for each of the power converter circuits including the semiconductor modules connected via the connection pieces ,
Wherein at least one of the bus bar portions is formed along at least one of the boundaries between the conversion circuit corresponding regions and comprises a slit extending beyond the bases of the connection pieces, 118, 126, 128)
Wherein the plurality of power converter circuits comprises a first power converter circuit comprising a first inverter (20) provided corresponding to a first rotating electrical machine (12) and a second power converter circuit comprising a second power converter circuit And a second power converter circuit including an inverter (22)
The conversion circuit corresponding regions (94, 96, 98; 110, 112, 114) of each of the bus bars include a first inverter corresponding region (94; 110) corresponding to the first inverter (96; 112) corresponding to the first inverter corresponding area (96) and the second inverter corresponding area (96) corresponding to the second inverter corresponding area (96), and the slit is provided between the first inverter corresponding area And a power converter.

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