KR101558596B1 - Reduced-pressure drying device and reduced-pressure drying method - Google Patents

Abstract

The object of the present invention is to provide a reduced-pressure drying apparatus for drying a treatment liquid on a substrate to which a treatment liquid has been applied to form a coating film, wherein the drying time of the treatment liquid is shortened and a uniform film thickness is obtained And a reduced-pressure drying method.

A chamber 85 and 86 for accommodating the target substrate G and forming a processing space and a holding portion 88 provided in the chamber 85 and 86 for holding the target substrate G An exhaust port 89 formed in the chambers 85 and 86 and exhausting means 91 for exhausting the atmosphere in the chamber from the exhaust port 89. The exhaust port 91 is provided in the chamber, (93, 94, 95) for forming a flow path of the airflow flowing in one direction on the upper surface of the substrate.

A vacuum drying apparatus, a chamber, a resist film, a cassette stage,

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a pressure-

The present invention relates to a reduced-pressure drying apparatus and a reduced-pressure drying method for performing a drying treatment on a substrate to be treated on which a treatment liquid is applied under a reduced-pressure environment so as to form a coating film in a photolithography process.

For example, in the manufacture of an FPD (flat panel display), a predetermined film is formed on a substrate to be processed such as a glass substrate, and then a photoresist (hereinafter referred to as a resist) A circuit pattern is formed by a so-called photolithography process in which a resist film is exposed in correspondence with a circuit pattern and the resist film is developed.

In the step of forming the resist film, after the resist is applied to the substrate, a reduced pressure drying treatment is performed in which the coated film is dried by decompression.

Conventionally, as a device for performing such a reduced-pressure drying process, for example, there is a reduced-pressure drying unit disclosed in Patent Document 1 shown in the sectional view of FIG.

In the reduced-pressure drying processing unit shown in Fig. 26, the lower chamber 151 and the upper chamber 152 are in close contact with each other, and a processing space is formed therein. In the processing space, a stage 153 for loading a substrate to be processed is provided. On the stage 153, a plurality of fixing pins 156 for mounting the substrate G are provided.

In this reduced-pressure drying processing unit, when a resist-coated substrate G is carried on the surface to be processed, the substrate G is loaded on the stage 153 via the fixing pins 156.

Subsequently, the upper chamber 152 is brought into close contact with the lower chamber 151, so that the substrate G is placed in the airtight processing space.

Subsequently, the atmosphere in the processing space is exhausted from the exhaust port 154, and a predetermined reduced-pressure atmosphere is obtained. By maintaining this depressurized state for a predetermined time, the solvent such as thinner in the resist solution is evaporated to some extent, the solvent in the resist solution is gradually released, and drying of the resist is promoted without adversely affecting the resist.

[Patent Document 1] Japanese Patent Application Laid-Open No. 2000-181079

In recent years, however, the glass substrate used for FPD or the like has become larger, and the chamber accommodating the glass substrate is also becoming larger in the reduced-pressure drying processing unit.

As a result, the volume in the chamber increases, and it takes time to decompress to a predetermined pressure. Further, since the amount of the resist solution applied on the substrate increases, it takes a long time until the resist solution uniformly spreads over the entire surface of the substrate, and the production efficiency is lowered.

SUMMARY OF THE INVENTION The present invention has been made under the circumstances as described above, and it is an object of the present invention to provide a reduced-pressure drying apparatus for drying a treatment liquid on a substrate to which a treatment liquid has been applied to form a coating film, The present invention also provides a reduced-pressure drying apparatus and a reduced-pressure drying method which can obtain a uniform film thickness.

In order to solve the above problems, a reduced pressure drying apparatus according to the present invention is a reduced pressure drying apparatus for forming a coating film by subjecting a substrate to which a process liquid has been applied to a reduced pressure drying process of the process liquid, An exhausting means provided in the chamber for holding the substrate to be processed, an exhaust port formed in the chamber, exhaust means for exhausting an atmosphere in the chamber from the exhaust port, And a rectifying means for forming a flow path of an air flow flowing in one direction on the upper surface of the substrate by an exhausting operation of the exhausting means.

By such a constitution, it is possible to form airflow flowing in one direction in the vicinity of the upper surface of the substrate during the reduced-pressure drying process. As a result, drying of the treatment liquid applied to the substrate is promoted, and uniform drying treatment can be performed on the substrate treatment surface in a shorter time.

In order to solve the above problems, the reduced-pressure drying method according to the present invention is characterized in that in the reduced-pressure drying apparatus, a reduced-pressure drying treatment of the treatment liquid is performed on the substrate to which the treatment liquid is applied, A drying method comprising: a step of holding a substrate to be held in the holding section; and a step of depressurizing a processing space in the chamber by the exhausting means and supplying an inert gas into the chamber by the air supply means .

By performing such a method, airflow can be generated in the processing space in the chamber during the reduced-pressure drying processing, and drying of the processing liquid applied to the substrate can be promoted.

According to the present invention, in the vacuum drying apparatus for forming a coating film by performing the drying treatment of the treatment liquid on the substrate to which the treatment liquid is applied, the drying time of the treatment liquid is shortened, and a uniform film thickness is obtained A reduced-pressure drying apparatus and a reduced-pressure drying method can be obtained.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 1 is a plan view of a coating and developing treatment system including a reduced-pressure drying apparatus according to the present invention.

This coating and developing processing system 10 is installed in a clean room, and for example, a glass substrate for LCD is used as a substrate to be processed. In the LCD manufacturing process, cleaning, resist coating, prebaking, developing and postbaking during photolithography And the like. Exposure processing is performed in an external exposure apparatus 12 installed adjacent to this system.

The coating and developing processing system 10 is provided with a long process station (P / S) 16 at the center and a cassette station (C / S) 14 and an interface station I / F) 18 are disposed.

The cassette station (C / S) 14 is a port for loading and unloading the cassettes C accommodating a plurality of substrates G stacked in multiple stages and arranging up to four cassettes C in one horizontal direction (Y direction) And a transport mechanism 22 for carrying the substrate G in and out with respect to the cassette C on the stage 20. [ The transfer mechanism 22 has a means capable of holding the substrate G, for example, a transfer arm 22a, and is operable in four axes of X, Y, Z, ) 16 and the substrate (G).

The process station (P / S) 16 arranges each processing section in the order of process flow or process on a pair of parallel lines A and B extending in a horizontal system longitudinal direction (X direction) have.

That is, the process line A from the cassette station (C / S) 14 side to the interface station (I / F) 18 side is provided with a carry unit (IN PASS) 24, The first thermal processing unit 28, the coating process unit 30 and the second thermal processing unit 32 are arranged in a line in this order from the upstream side along the first parallel transporting route 34. [

More specifically, the loading unit (IN PASS) 24 receives the unprocessed substrate G from the transport mechanism 22 of the cassette station (C / S) 14, (34).

The cleaning process section 26 is provided with an excimer UV irradiation unit (E-UV) 36 and a scrubber cleaning unit (SCR) 38 in this order from the upstream side along the first parallel transporting route 34.

An adhesion unit (AD) 40 and a cooling unit (COL) 42 are provided in this order from the upstream side of the first thermal processing unit 28. A resist coating unit (COT) 44 and a reduced pressure drying unit (VD) 46 as a reduced pressure drying apparatus according to the present invention are provided in this order from the upstream side.

A pre-bake unit (PRE-BAKE) 48 and a cooling unit (COL) 50 are provided in the second thermal processing unit 32 from the upstream side.

A path unit (PASS) 52 is provided at the end of the first rectilinear transport path 34 located on the downstream side of the second thermal processing unit 32.

The substrate G conveyed on the first rectilinear conveying path 34 in a flat state is conveyed from the pass unit PASS 52 at the end point to the interface station I / F 18.

On the other hand, in the downstream process line B from the interface station (I / F) 18 side to the cassette station (C / S) 14 side, a developing unit (DEV) 54, a post- (BAKE) 56, a cooling unit (COL) 58, an inspection unit (AP) 60 and an output unit (OUT PASS) 62 are arranged in this order from the upstream side along the second conveying path 64 Are arranged in a line.

Here, the post-baking unit (POST-BAKE) 56 and the cooling unit (COL) 58 constitute the third thermal processing unit 66. The carry-out unit (OUT PASS) 62 receives the processed substrates G one by one from the second flat conveying path 64 and transfers them to the conveying mechanism 22 of the cassette station (C / S) 14 Consists of.

An auxiliary transfer space 68 is formed between the two process lines A and B. A shuttle 70 capable of horizontally loading the substrate G on a unit basis is supported by a drive mechanism Direction (X direction).

The interface station I / F 18 is provided with a transfer device 72 for exchanging the substrate G with the adjacent first and second transfer paths 34, 64 and the adjacent exposure device 12 And a rotary stage (R / S) 74 and a peripheral device 76 are disposed around the conveying device 72. The rotary stage R / The rotary stage (R / S) 74 is a stage for rotating the substrate G in a horizontal plane, and is used to change the direction of the rectangular substrate G when transmitting with the exposure apparatus 12. The peripheral device 76 connects, for example, a TITLER, an edge exposure device EE, or the like to the second parallel transporting route 64.

Fig. 2 shows the processing procedure of the whole processing for one substrate G in this coating and developing processing system. First, in the cassette station (C / S) 14, the transport mechanism 22 takes out the substrate G from any one of the cassettes C on the stage 20, (Step S 1 in FIG. 2) to the transfer unit (IN PASS) 24 on the process line (A) side of the process station (P / S) The substrate G from the carrying unit (IN PASS) 24 is loaded or put on the first conveying path 34.

The substrate G put in the first flat conveying path 34 is first irradiated with the excimer UV irradiation unit (E-UV) 36 and the scrubber cleaning unit (SCR) 38 in the cleaning process unit 26 Ultraviolet ray cleaning processing and scrubbing cleaning processing are sequentially performed (steps S2 and S3 in Fig. 2).

The scrubber cleaning unit (SCR) 38 removes contamination of the substrate shape from the substrate surface by performing brush cleaning or blow cleaning on the horizontally moving substrate G on the flat conveying path 34, Rinsing is performed, and finally, the substrate G is dried by using an air knife or the like. After completion of the series of cleaning processes in the scrubber cleaning unit (SCR) 38, the substrate G is lowered to the first flat conveying path 34 as it is and reaches the first thermal processing unit 28.

In the first thermal processing unit 28, the substrate G is first subjected to the adhism treatment using steam HMDS in the adhesion unit (AD) 40, and the surface of the substrate G is hydrophobized Step S4). After the completion of the advancing process, the substrate G is cooled from the cooling unit (COL) 42 to a predetermined substrate temperature (step S5 in FIG. 2). Subsequently, the substrate G is conveyed to the coating processing section 30 by lowering the first conveying path 34.

In the coating process section 30, the substrate G is coated with a resist solution on the upper surface (the surface to be treated) of the substrate by the spin-less method using a slit nozzle as it is in a state of being initially in a resist coating unit (COT) And immediately thereafter, is subjected to the drying treatment at room temperature by the reduced pressure in the downstream side vacuum drying unit (VD) 46 (step S6 in FIG. 2).

The substrate G coming out of the coating process section 30 goes down the first flat conveying path 34 and reaches the second thermal processing section 32. In the second thermal processing unit 32, the substrate G is first subjected to pre-baking (pre-baking) by a pre-baking unit (PRE-BAKE) 48 as a heat treatment after resist coating or a heat treatment before exposure (step S7 in FIG.

By this pre-baking, the solvent remaining in the resist film on the substrate G is evaporated and removed, and the adhesion of the resist film to the substrate is enhanced. Next, the substrate G is cooled from the cooling unit (COL) 50 to a predetermined substrate temperature (step S8 in Fig. 2). Subsequently, the substrate G is transferred from the pass unit PASS 52, which is the end point of the first rectilinear transport path 34, to the transport apparatus 72 of the interface station (I / F)

In the interface station (I / F) 18, the substrate G is transferred to the peripheral exposure apparatus EE of the peripheral device 76 after having undergone a directional change, for example, of 90 degrees at the rotary stage 74 Where it is exposed to remove the resist attached to the peripheral portion of the substrate G at the time of development, and then sent to the neighboring exposure apparatus 12 (step S9 in Fig. 2).

In the exposure apparatus 12, a predetermined circuit pattern is exposed in the resist on the substrate G. [ When the substrate G having undergone the pattern exposure is returned from the exposure apparatus 12 to the interface station I / F 18, the substrate G is first transferred to the titler TITLER of the peripheral device 76, Predetermined information is recorded in a predetermined area on the substrate (step S10 in Fig. 2). Subsequently, the substrate G is conveyed from the conveying device 72 to the developing unit (DEV) 54 (second conveying path) of the second conveying path 64, which is attached to the process line (B) side of the process station ).

In this manner, the substrate G is transported toward the downstream side of the process line B on the second flat conveying path 64 at this time. In the first developing unit (DEV) 54, a series of development processing such as development, rinsing, and drying is performed while the substrate G is being conveyed in parallel (step S11 in Fig. 2).

The substrate G having completed the series of developing processes in the developing unit (DEV) 54 is transferred to the third thermal processing unit 66 and the inspection unit (AP) 60 while being held in the second parallel transporting route 64 Pass sequentially. In the third thermal processing unit 66, the substrate G is subjected to post-baking as a post-development heat treatment in the POST-BAKE 56 (step S12 in FIG. 2).

By this post-baking, the developing solution and the cleaning liquid remaining in the resist film of the substrate G are evaporated and removed, and the adhesion of the resist pattern to the substrate is enhanced. Next, the substrate G is cooled to a predetermined substrate temperature in the cooling unit (COL) 58 (step S13 in Fig. 2). In the inspection unit (AP) 60, non-contact line width inspection, film quality, film thickness inspection, and the like are performed on the resist pattern on the substrate G (step S14 in FIG. 2).

The carry-out unit (OUT PASS) 62 receives the substrate G that has been subjected to the entire process from the second flat conveying path 64 and transfers it to the conveying mechanism 22 of the cassette station (C / S) . On the side of the cassette station (C / S) 14, the transport mechanism 22 transports the substrate G, which has been processed from the transport unit OUT PASS 62, to any one (usually original) cassette C, (Step S15 in Fig. 2).

In the coating and developing processing system 10, the reduced-pressure drying apparatus of the present invention can be applied to the reduced-pressure drying unit (VD) 46 in the coating process unit 30. [

Next, a first embodiment of the reduced-pressure drying unit (VD) 46 to which the reduced-pressure drying apparatus of the present invention is applied will be described with reference to Figs. 3 to 6. Fig.

3 is a plan view showing the entire configuration of the coating process section 30. As shown in Fig. Fig. 4 is a side view of the coating process section 30. Fig. 5 is a plan view of the vacuum drying unit (VD) 46, and Fig. 6 is a sectional view taken along the line C-C of Fig.

3 and 4, the coating process section 30 includes a resist coating unit (COT) 44 having a nozzle 84 on a support base 80, a vacuum drying unit (VD) 46, Are arranged in a line in the horizontal direction in accordance with the order of the processing steps. A pair of guide rails 81 are laid on both sides of the support table 80 and the substrate G is transferred to a resist coating unit (not shown) by a set of transfer arms 82, which are moved in parallel along the guide rails 81 COT) 44 to the reduced pressure drying unit (VD)

The resist coating unit (COT) 44 has a nozzle 84 as described above, and the nozzle 84 is fixed in a suspended state from a gate 83 fixed on the support table 80. The resist liquid R as a treatment liquid is supplied from the resist liquid supply means (not shown) to the nozzle 84 and is supplied to the nozzle 84 through the lower portion of the gate 83 by the transfer arm 82 And the resist solution R is applied from one end to the other end.

As shown in Figs. 4 and 6, the reduced-pressure drying unit (VD) 46 includes a lower chamber 85 having a shallow bottom shape with its top surface opened and a lower chamber 85 formed on the upper surface of the lower chamber 85 And an upper chamber 86 in the form of a cover which is configured to be hermetically and closely contactable.

3 and 5, the lower chamber 85 is substantially rectangular, and a plate-shaped stage 88 (holding portion) for holding and holding the substrate G horizontally by suction is arranged at the center portion . The upper chamber 86 is moved up and down by the upper chamber moving means 87 so that the upper chamber 86 is lowered to the lower chamber 85 So that the substrate G mounted on the stage 88 is accommodated in the processing space.

An exhaust port 89 is formed at two locations on the bottom surface of the lower chamber 85 below the stage 88 and below the substrate G held by the stage 88, An exhaust pipe 90 connected to the exhaust port 89 is connected to a vacuum pump 91 (exhaust means). The processing chamber in the chamber can be depressurized to a predetermined degree of vacuum by the vacuum pump 91 while the upper chamber 86 is covered with the lower chamber 85.

An inert gas (for example, nitrogen gas) is supplied into the chamber in the vicinity of one side of the bottom surface of the substantially rectangular lower chamber 85 to form a gas supply mechanism 92 for purging the atmosphere in the chamber . As shown in Fig. 6, the air supply tube 96 connected to the air supply mechanism 92 is connected to the inert gas supply portion 97 (air supply means).

The supply of the inert gas from the air supply mechanism 92 is started when the atmospheric pressure in the chamber reaches a predetermined value (for example, 400 Pa or less) or after a predetermined time has elapsed after the chamber is started to be decompressed. This is to maintain the air flow in the chamber in which the flow rate decreases due to the decompression, thereby contributing to the reduction of the time of the reduced pressure drying treatment.

In order to maintain a steady flow of air at all times during the reduced-pressure drying treatment, the initiation of the supply of the inert gas may be performed before or simultaneously with the start of the pressure reduction in the chamber.

5, between the bottom surface of the lower chamber 85 and the stage 88, a U-shaped rectifying plate 93 (the first rectifying plate 93) is formed around the exhaust port 89 in a plan view, Member) is provided. The side openings 93a and the communication paths 93b communicating with the exhaust ports 89 from the side openings 93a are formed. That is, the atmosphere in the chamber flows from the side opening 93a of the flow regulating plate 93 through the communication path 93b to be exhausted from the exhaust port 89 when flowing into the lower portion of the stage 88 (substrate G) .

5, the side openings 93a of the rectifying plate 93 are provided so as to face the feed mechanism 92 in the opposite direction (with the stage 88 interposed therebetween) have. The inert gas supplied from the air supply mechanism 92 flows in one direction over the substrate G mounted on the stage 88 and is then exhausted from the exhaust port 89. [

A block member 95 (shown in FIG. 1) for filling the space below the substrate G held on the stage 88 is provided on both left and right sides of the communication path 93b in the chamber, adjacent to the rectifying plate 93 Second rectifying member) are provided.

Side bar members 94 of substantially angled rod shape are provided adjacent to the block member 95 on the left and right inner walls of the lower chamber 85. Inside the upper and lower chambers 86, A side bar member 98 is provided corresponding to the side bar member 94 in the lower chamber 85, respectively. By closing the upper chamber 86 and the lower chamber 85 by providing these side bar members 94 and 98 (eighth rectifying member), spaces on the left and right sides of the substrate G are filled, The gas flow path to the exhaust port 89 is limited to pass over the substrate G.

The transfer arm 82 is moved on the rail 81 to move the resist coating unit COT onto the transfer arm 82. When the substrate G is loaded on the transfer arm 82, And passes under the gate 83 of the gate electrode 44. At this time, the resist solution R is discharged from the nozzle 84 fixed to the gate 83 to the substrate G moving therebelow, and the resist solution R is discharged from one side of the substrate G toward the other side R) is applied. The substrate G is positioned below the upper chamber 86 of the reduced-pressure drying unit (VD) 46 at the time when the resist solution is applied over the entire surface of the substrate G (coating end position) (G) is covered by the upper chamber 86 as a whole.

Subsequently, the substrate G is covered by the upper chamber 86 which is loaded on the stage 88 of the vacuum drying unit (VD) 46 and moves downward from above by the upper chamber moving means 87 . The substrate G is accommodated in the processing space formed by the upper chamber 86 and the lower chamber 85 being brought into close contact with each other.

From this state, the vacuum pump 91 is operated to draw air in the processing space through the exhaust pipe 90 from the exhaust port 89, and is depressurized until the atmospheric pressure of the processing space becomes a predetermined vacuum state. Thereby, the resist solution formed on the substrate G is dried under reduced pressure without heating.

Here, when the atmospheric pressure in the chamber reaches a predetermined value (for example, 400 Pa or less), or when a predetermined time has passed since the start of the pressure reduction, An inert gas is supplied into the chamber. Thereby, the airflow in the chamber is maintained even under a reduced pressure environment.

The supply of the inert gas from the air supply mechanism 92 may be controlled to be performed before the start of the pressure reduction or at the same time as the start of the pressure decrease.

6, since the rectifying plate 93, the block member 95, and the side bar members 94, 98 are provided as rectifying means in this vacuum drying step, A flow path of airflow flowing in one direction is formed. The flow of the inert gas supplied from the air supply mechanism 92 passes through the upper surface of the substrate and flows from the side opening 93a of the flow regulating plate 93 through the communication path 93b to the exhaust port 89 do.

Therefore, the gas continues to flow above the substrate at a uniform flow rate over the entire upper surface of the substrate G during the reduced-pressure drying process. As a result, the drying speed of the resist solution R applied to the upper surface of the substrate is improved, and the reduced-pressure drying process is performed in a shorter time.

The upper chamber 86 is moved upward by the upper chamber moving means 87 to move the substrate G from the vacuum drying unit (VD) 46 to the next processing step do.

As described above, according to the first embodiment of the reduced-pressure drying apparatus of the present invention, in the reduced-pressure drying unit (VD) 46, by controlling the air flow in the chamber, It is possible to continuously flow the uniformly flowing gas in one direction with respect to the whole.

Therefore, in the reduced-pressure drying process, evaporation from the resist solution R applied to the substrate G can be efficiently exhausted, and the drying speed of the resist solution R can be improved.

In the first embodiment, an example in which the air supply mechanism 92 and the air supply means 97 are provided has been described. However, the present invention is not limited thereto, and in FIGS. 5 and 6, And the air supply means 97 are not provided, the effect of the present invention can be sufficiently obtained. That is, even if the air supply is not performed, the gas in the chamber does not flow downward (and side) of the substrate G only by the exhaust process from the exhaust port 89, ). Therefore, also in this case, the drying speed of the resist solution R applied to the upper surface of the substrate can be improved, and the reduced-pressure drying process can be performed in a shorter time.

Next, a second embodiment of the reduced-pressure drying unit (VD) 46 to which the reduced-pressure drying apparatus of the present invention is applied will be described with reference to Figs. 7 to 9. Fig. In the second embodiment, the same parts as those in the first embodiment are denoted by the same reference numerals, and a detailed description thereof will be omitted. Further, the embodiment of the exhaust and air supply control is the same as that of the first embodiment, and a description thereof will be omitted.

Fig. 7 is a plan view of the reduced-pressure drying unit (VD) 46 in the second embodiment, Fig. 8 is a sectional view taken along the line C-C in Fig. 7, and Fig. 9 is a sectional view taken along the line D-D in Fig.

In the second embodiment, the decompression drying unit (VD) 46 includes, in the same manner as in the first embodiment, a lower chamber 85 of shallow container shape with its top surface opened, And an upper chamber 86 in the form of a lid which is hermetically closeable to the upper surface.

However, the chambers shown in the first embodiment are chambers in which the side bar members 94 and 98 (eighth rectifying members) shown in Fig. 5 are not required to be used, that is, as shown in Figs. 7 and 8 The inner wall of the chamber G (the inner walls 86a and 86b of the upper chamber 86 in the figure) is close to one end of the substrate G. [ When the space on the side of the substrate G is large, it is preferable to use the side bar members 94 and 98 shown in Fig.

A stage 88 (holding portion) is disposed at the center of the lower chamber 85 as in the first embodiment and a block member 102 (third rectifying member) as a rectifying means is disposed so as to surround the stage 88. [ Respectively. By providing the block member 102, at least the space below the periphery of the substrate G is filled. Although the figure shows an example in which the substrate G is held at a position higher than the lower chamber 85, the block member 102 (the lower chamber 85) is arranged so that the substrate holding position is received in the lower chamber 85, Or may be formed in such a way that it can be digested within it. The block member 102 may be integrally formed with the lower chamber 85, or may be a separate member.

In the first embodiment, a plurality of (three in the drawing) exhaust ports 101 are provided on the substrate G as shown in the second embodiment, although the exhaust ports 89 are formed below the substrate G. However, As shown in Fig. The plurality of exhaust ports 101 and the air supply mechanisms 92 are formed at positions lower than the substrate G with the substrate G therebetween.

With this structure, the block member 102 functions as a dam preventing flow of the airflow to the lower portion of the substrate. 8, the inert gas supplied from the air supply mechanism 92 does not flow downward (and laterally) of the substrate G, but passes all over the substrate in one direction, and is discharged through the air discharge port 101 ).

Therefore, even in the second embodiment, the gas continues to flow at a uniform flow rate over the entire upper surface of the substrate G during the reduced-pressure drying process above the substrate, and as a result, the resist solution R) is improved, and the reduced-pressure drying process can be performed in a shorter time.

In the second embodiment, an example in which the air supply mechanism 92 and the air supply means 97 are provided has been described. In the present invention, however, the present invention is not limited thereto. In FIGS. 7 and 8, And the air supply means 97 are not provided, the effect of the present invention can be sufficiently obtained. That is, the gas in the chamber does not flow downward (and side) of the substrate G only by the exhaust process from the exhaust port 101, Lt; / RTI > Therefore, also in this case, the drying speed of the resist solution R applied to the upper surface of the substrate can be improved, and the reduced-pressure drying process can be performed in a shorter time.

Next, a third embodiment of the reduced-pressure drying unit (VD) 46 to which the reduced-pressure drying apparatus of the present invention is applied will be described with reference to Figs. 10 and 11. Fig. In the third embodiment, the same parts as those in the first and second embodiments are denoted by the same reference numerals, and a detailed description thereof will be omitted.

Fig. 10 is a plan view of the reduced-pressure drying unit (VD) 46 in the third embodiment, and Fig. 11 is a sectional view taken along the line C-C in Fig.

In the structure of the reduced pressure drying unit (VD) 46 shown in the third embodiment, the air supply mechanism 92 and the inert gas supply unit 97 (air supply unit) shown in the second embodiment are not provided , And the shape of the rectifying means installed in the chamber is also different.

That is, as the rectifying means, the block member 104 (the fourth member) in which a plurality of (three in the drawing) exhaust ports 101 are formed is used instead of the block member 102 shown in the second embodiment, And a block member 103 (fourth rectifying member) provided on the opposite side of the block member 104 with the substrate G interposed therebetween.

More specifically, as shown in the drawing, the exhaust port 101 is formed in the block member 104 in the vicinity of the edge of the held substrate G. The lower space of the edge of the substrate on the side where the exhaust port 101 is formed is filled with the block member 104 and the space below the edge of the substrate on the opposite side of the exhaust port 101 with the substrate G therebetween, The block member 103 is in a state of being filled. The block members 103 and 104 may be integrally formed with the lower chamber 85, or may be separate members.

With this structure, as shown in Fig. 11, the gas in the chamber does not flow downward (and laterally) of the substrate G, but flows all over the substrate in one direction and flows to the exhaust port 101. [

Therefore, even in the third embodiment, the gas continues to flow at a uniform flow rate over the entire upper surface of the substrate G during the reduced-pressure drying process above the substrate. As a result, the resist solution R) is improved, and the reduced-pressure drying process can be performed in a shorter time.

In the third embodiment, the fourth rectifying member is divided into the respective block members 103 and 104, and a space is formed below the stage 88. However, the block members 103 and 104 May be formed as a single block member (not shown) so as to fill the space below the stage 88.

In the third embodiment, in the examples shown in Figs. 10 and 11, the air supply mechanism 92 and the inert gas supply unit 97 (air supply means) as shown in the second embodiment are not provided The supply mechanism 92 may be formed on the side of the substrate opposite to the exhaust port 101 with the substrate G interposed therebetween (near the outer side of the block member 103 in Fig. 11).

12, when the air supply mechanism 92 and the inert gas supply unit 97 (air supply means) are provided, the air supply port 101 and the air supply port (second air supply port) 92 may be formed so that they are arranged on the side of the substrate (in the vicinity of the edge of the substrate) with the substrate G interposed therebetween. 12 shows an example in which the fifth rectifying member is one block member 105 and the space below the stage 88 is filled. However, the space below the edge of the substrate on the exhaust port 101 side, At least the space below the edge of the substrate on the side of the substrate 92 may be filled. That is, for example, the exhaust port 101 and the air supply mechanism 92 may be formed in different block members (fifth rectifying members), respectively, and a space may be formed below the stage 88.

Next, a fourth embodiment of the reduced-pressure drying unit (VD) 46 to which the reduced-pressure drying apparatus of the present invention is applied will be described with reference to Figs. 13 and 14. Fig. In the fourth embodiment, the same parts as those in the first to third embodiments are denoted by the same reference numerals, and a detailed description thereof will be omitted.

Fig. 13 is a plan view of the reduced-pressure drying unit (VD) 46 in the fourth embodiment, and Fig. 14 is a sectional view taken along the line C-C in Fig.

In the fourth embodiment, the decompression drying unit (VD) 46 is different from the second embodiment only in the rectifying means installed in the chamber.

13 and 14, instead of the block member 102 shown in the second embodiment, the exhaust port 101 is spaced apart from the bottom space of the edge of the substrate on the opposite side with the substrate G interposed therebetween, A block member 106 (a sixth rectifying member) is provided as a rectifying means for at least filling up the exhaust gas.

The block member 106 may be integrally formed with the lower chamber 85, or may be a separate member.

14, the inert gas supplied from the air supply mechanism 92 does not flow downward (and laterally) of the substrate G, but passes all over the substrate in one direction and flows through the air discharge port 101 ).

Therefore, even in the fourth embodiment, the gas continues to flow at a uniform flow rate over the entire upper surface of the substrate G during the reduced-pressure drying process above the substrate. As a result, the resist solution R) is improved, and the reduced-pressure drying process can be performed in a shorter time.

In the fourth embodiment, an example in which the air supply mechanism 92 and the air supply means 97 are provided has been described. In the present invention, however, the present invention is not limited thereto. In FIGS. 13 and 14, And the air supply means 97 are not provided, the effect of the present invention can be sufficiently obtained. That is, the gas in the chamber does not flow downward (and side) of the substrate G only by the exhaust process from the exhaust port 101, Lt; / RTI > Therefore, even in this case, the drying speed of the resist solution R applied to the upper surface of the substrate can be improved, and the reduced-pressure drying process can be performed in a shorter time.

In the fourth embodiment, the air supply mechanism 92 is formed at the bottom of the lower chamber 85. However, the present invention is not limited to this configuration. For example, as shown in Fig. 15, the air supply mechanism 92 may be formed in the block member 106 (the seventh rectifying member) And the feed mechanism 92 may be disposed in the vicinity of the substrate G.

Next, a fifth embodiment of the reduced-pressure drying unit (VD) 46 to which the reduced-pressure drying apparatus of the present invention is applied will be described based on Figs. 16 to 19. Fig.

In the fifth embodiment, unlike the first to fourth embodiments described above, the stage for holding the substrate G is characterized in that it can be moved up and down. However, in the common portion with the above embodiment Are denoted by the same reference numerals, and a detailed description thereof will be omitted.

16 is a plan view of the reduced-pressure drying unit (VD) 46 in the fifth embodiment. 17 to 19 are sectional views taken along arrows C-C in Fig. 16, respectively, showing a state in which the stage holding the substrate G moves up and down, and the heights thereof are different from each other.

As shown in the drawing, a plurality of exhaust ports 101 and one feed mechanism 92 are provided in the lower chamber 85 of the reduced-pressure drying unit (VD) 46 in such a manner that the substrate G As shown in Fig.

19, in order to flow a large amount of inert gas to the upper surface of the substrate G when the inert gas is supplied from the air supply mechanism 92, the stage 88 is disposed below the chamber. In this state, the space below the edge of the substrate at the opposite side with respect to the exhaust port 101 across the substrate G is filled with block members 107 and 108 (sixth rectifying member) as rectifying means .

16, walls are formed on the left and right sides of the board G on both left and right sides of the block members 107 and 108, and a side bar member for restricting the flow of the inert gas toward the side of the substrate (An eighth rectifying member) is provided.

The side bar member 109 may be formed in a rod shape (or a plate shape) as shown in the drawing so as to block the left and right side spaces of the substrate G, As shown in FIG.

The side bar member 109 is formed to be at least longer than the left and right side lengths of the substrate G in order to facilitate formation of airflow on the substrate G. [

Here, as shown in the drawing, the end of the side bar member 109 (particularly the side of the exhaust port 101) may be provided without touching the inner wall of the chamber. In this case, a part of the space on the right and left sides of the substrate G is blocked, but the flow of the inert gas to the side of the substrate can be sufficiently suppressed.

16, the side bar member 109 may be formed to have a length in contact with the inner wall of the chamber whose both ends are opposed to each other, so as to completely block the spaces on the left and right sides of the substrate G ).

17, the stage 88 holding the substrate G is moved up and down by an elevating device 99 (elevating means) configured by a ball screw mechanism using, for example, a motor as a driving source It is possible.

The upper chamber 86 rises and the chamber is opened and the stage 88 is moved up and down to the vicinity of the height of the upper surface of the lower chamber 85 by the lifting device 99, do. In this state, the substrate G is carried in and out from the stage 88 by, for example, the carrying arm 82. [

18, the stage 88 is moved up to the upper position in the chamber by the driving of the elevating device 99, and is stopped do.

Subsequently, the vacuum pump 91 is operated to suck the air in the processing space from the exhaust port 101, and the pressure in the processing space is reduced until the atmospheric pressure of the processing space becomes a predetermined vacuum state. Here, the upper surface of the substrate G is close to the lower surface of the upper chamber 86, and almost no flow of the atmosphere occurs on the upper surface of the substrate G. As a result, the resist solution R formed on the substrate G is naturally dried by decompression for the first time, and the occurrence of transfer marks or the like is suppressed.

Here, when the atmospheric pressure in the chamber reaches a predetermined value (for example, 400 Pa or less) or a predetermined time has passed since the start of the pressure reduction, the stage 88 is driven by the elevation device 99, And moves down to the lower position in the chamber and stops.

Subsequently, an inert gas of a predetermined flow rate is supplied into the chamber from the air supply mechanism 92 by driving the inert gas supply unit 97. Thereby, the airflow in the chamber is maintained even under a reduced pressure environment.

Since the block members 107 and 108 and the side bar member 109 as the rectifying means are provided, the inert gas supplied from the air supply mechanism 92 does not flow downward and to the side of the substrate G, And flows into the exhaust port 101 through one direction. As a result, the drying speed of the resist solution R applied to the upper surface of the substrate is improved, the reduced-pressure drying process is performed for a short time, and the dry state is more uniform.

As described above, according to the fifth embodiment, after the resist liquid R on the substrate G is naturally dried for the first time, the inert gas can flow at a uniform flow rate over the entire upper surface of the substrate G, The occurrence of transfer marks or the like in the resist film can be suppressed and the dry state of the resist film can be made uniform.

In the fifth embodiment, an example in which the air supply mechanism 92 and the air supply means 97 are provided has been described. In the present invention, however, the present invention is not limited thereto. In Figs. 16 to 19, 92 and the air supply means 97 are not provided, the effect of the present invention can be sufficiently obtained. That is, the gas in the chamber does not flow downward (to the side) of the substrate G by only the exhaust process from the exhaust port 101, and flows to the exhaust port 101 through the one direction to the upper side of the substrate . Therefore, even in this case, the drying speed of the resist solution R applied to the upper surface of the substrate can be improved, and the reduced-pressure drying process can be performed in a shorter time.

In the first to fifth embodiments described above, two exhaust ports 89 (first embodiment) or three exhaust ports 101 (second and third exhaust ports) are provided as exhaust ports below the substrate G , Fourth and fifth embodiments), but the number and arrangement (layout) are not limited.

The exhaust port 101 is formed on the bottom surface of the processing space. However, the present invention is not limited to this. The substrate 101 may be formed on the inner wall of the chamber, or on the side of the substrate G, It may be formed somewhat above the substrate G. In this case,

The shapes of the exhaust ports 89 and 101 are of a garden type, but the present invention is not limited thereto, and other shapes such as a long hole, a square, or the like may be used.

Although the air supply mechanism 92 is formed on the bottom surface of the processing space, the present invention is not limited thereto and may be a height position lower than the substrate G (for example, an inner wall portion of the lower chamber 85, ].

Alternatively, the exhaust ports 89 and 101 and the air supply mechanism 92 may not be the holes formed in the chambers, but may be nozzle-shaped openings.

In the first to fifth embodiments described above, the example of the substrate G being carried in and out by the transport arm 82 with respect to the reduced-pressure drying unit (VD) 46 is shown, but the present invention is not limited thereto The reduced-pressure drying apparatus of the present invention can also be applied to a structure for carrying in and out the substrate by roller conveyance.

(Example)

Next, a vacuum drying apparatus according to the present invention will be further described on the basis of examples. In the present embodiment, the effect is verified by actually performing experiments using the reduced-pressure drying apparatus having the structure shown in the above-mentioned embodiment (first embodiment).

In this experiment, it was found from the results of the reduced pressure drying process using the reduced pressure drying unit (reduced pressure drying apparatus) shown in Fig. 20 and the development process (90 sec) that the flow rate of the gas formed on the substrate, The relationship between the drying time and the residual film ratio was verified (Example 1). Here, the remaining film ratio is the ratio (%) of the resist film thickness after development relative to the resist film thickness before development.

20 shows a chamber structure of a C-shaped rectifying plate in a plan view and a vacuum drying unit in which a block member and a side bar member are provided, similar to the above embodiment, and shows a chamber structure corresponding to a member shown in the above embodiment Are denoted by the same reference numerals. 20 (a) is a plan view of the lower chamber, and FIG. 20 (b) is a sectional view taken along line D-D thereof. 20 (b) also shows the chamber ceiling portion by the upper chamber.

As a first comparative example, a C-shaped rectifying plate is provided as shown in a plan view of FIG. 21 (a) and a cross section of a DD arrow of FIG. 21 (b) A reduced pressure drying process and a development process were carried out in the same manner as in the first embodiment by using a reduced pressure drying unit having a structure in which a gap was formed between the substrate G and the stage by a pin 120 supported thereon. In this case, by supporting the substrate with the fin 120, the distance dimension between the substrate and the chamber ceiling portion becomes 5 mm, which is smaller than the case of the first embodiment (15 mm).

As a second comparative example, a C-shaped rectifying plate is provided as shown in a plan view of FIG. 22 (a) and a cross section of a DD arrow of FIG. 22 (b), and, similarly to the first embodiment, A reduced-pressure drying process and a developing process were carried out in the same manner as in the first embodiment, using a reduced-pressure drying unit having a structure in which a substrate G was placed on the substrate. Unlike the structure of the reduced-pressure drying unit of the first embodiment, the second comparative example does not include the block member 95 and the side bar members 94 and 98. [

As a result of the first embodiment, the wired mark of the gas on the substrate at a pressure of 100 Pa and a flow rate of 11 L / min during reduced-pressure drying is shown in a perspective sectional view of Fig. 23 (a) The distribution of the remaining film ratios is shown in Fig. 23 (b).

As a result of the first comparative example, the wired mark of gas on the substrate at a pressure of 100 Pa and a flow rate of 11 L / min during reduced pressure drying is shown in a perspective sectional view of Fig. 24 (a) Fig. 24 (b) shows the distribution of the remaining film ratios.

As a result of the second comparative example, the wired mark of the gas on the substrate at a pressure of 100 Pa and a flow rate of 11 L / min during reduced-pressure drying is shown in a perspective sectional view of Fig. 25 (a) Fig. 25 (b) shows the distribution of the remaining film ratios.

As shown in Fig. 23 (a), it was confirmed that a large amount of gas flows on the upper surface of the substrate in the first embodiment. Further, as shown in Fig. 23 (b), the residual film ratio after development was substantially uniformly high on the upper surface of the substrate. In addition, the time required for the decompression drying treatment was about 16 sec for a short time.

On the other hand, as shown in Fig. 24A, it was confirmed that the flow rate of the gas flowing on the upper surface of the substrate was small in the first comparative example. This is because the gap between the substrate G and the upper chamber 86 is small because the substrate G is supported by the fin 120 and a space is generated below the substrate G, And the flow rate of the gas is high. Further, a large amount of airflow was formed in the spaces on the left and right sides of the substrate G. Further, as shown in Fig. 24 (b), the residual film ratio after development was low on the overall upper surface of the substrate and became non-uniform. The time required for the reduced-pressure drying treatment was about 28 seconds.

Further, as shown in Fig. 25 (a), in the second comparative example, it was confirmed that the flow rate of the gas flowing on the upper surface of the substrate was increased as compared with the first comparative example. This is because there is no clearance between the substrate G and the stage 88, and the space above the substrate G is widened. Further, a large amount of airflow was formed in the spaces on the left and right sides of the substrate G. Therefore, it was thought that the flow rate of the gas flowing on the substrate was decreased as compared with the first embodiment. Further, as shown in Fig. 25 (b), the uniformity of the remaining film thickness distribution after development was remarkably improved over the entire upper surface of the substrate compared with the first comparative example, but not about the first embodiment. Further, the time required for the reduced pressure drying treatment was about 21 sec, which was shorter by about 7 sec than the first comparative example.

As a result of the above examples, it has been confirmed that the drying time of the treatment liquid such as a resist is shortened and a uniform film thickness can be obtained by the vacuum drying apparatus of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a coating and developing system including a reduced-pressure drying apparatus according to the present invention. Fig.

2 is a flowchart showing the flow of substrate processing in the coating and developing processing system of FIG.

Fig. 3 is a plan view showing the entire configuration of a coating process section. Fig.

4 is a side view of the coating process section;

5 is a plan view of a reduced-pressure drying unit applied as a first embodiment of the reduced-pressure drying apparatus according to the present invention.

6 is a sectional view taken along the line C-C in Fig. 5;

7 is a plan view of a reduced pressure drying unit applied as a second embodiment of the reduced pressure drying apparatus according to the present invention.

8 is a sectional view taken along the line C-C in Fig.

9 is a sectional view taken along the line D-D in Fig.

10 is a plan view of a reduced-pressure drying unit applied as a third embodiment of the reduced-pressure drying apparatus according to the present invention.

11 is a sectional view taken along the line C-C in Fig. 10; Fig.

12 is a cross-sectional view showing another embodiment of a reduced-pressure drying unit applied as a third embodiment of the reduced-pressure drying apparatus according to the present invention.

13 is a plan view of a vacuum drying unit applied as a fourth embodiment of the vacuum drying apparatus according to the present invention.

14 is a sectional view taken along the line C-C in Fig.

15 is a cross-sectional view showing another embodiment of a reduced-pressure drying unit applied as a fourth embodiment of the reduced-pressure drying apparatus according to the present invention.

16 is a plan view of a reduced-pressure drying unit applied as a fifth embodiment of the reduced-pressure drying apparatus according to the present invention.

FIG. 17 is a cross-sectional view taken along the line C-C in FIG. 16, showing a state in which a stage for holding a substrate moves up and down;

FIG. 18 is a cross-sectional view taken along line C-C of FIG. 16, showing a state in which a stage for holding a substrate is positioned above the chamber;

Fig. 19 is a cross-sectional view taken along the line C-C in Fig. 16, showing a state in which a stage for holding a substrate is positioned below the chamber.

20 is a view showing the chamber structure of the reduced-pressure drying unit used in the first embodiment;

21 is a view showing the chamber structure of the reduced-pressure drying unit used in the first comparative example;

22 is a diagram showing the chamber structure of the reduced-pressure drying unit used in the second comparative example;

23 is a diagram showing the results of the first embodiment;

24 is a diagram showing the results of the first comparative example;

25 is a diagram showing the result of the second comparative example;

26 is a sectional view showing a schematic configuration of a conventional vacuum drying unit;

Description of the Related Art

85: Lower chamber

88: stage

92:

93: rectification means

94: Sidebar member

95: Block member

G: substrate

Claims (14)

A vacuum drying apparatus for forming a coating film by performing a reduced pressure drying treatment of a treatment liquid on a substrate to which a treatment liquid has been applied, A chamber for accommodating a substrate to be processed and forming a processing space; A holding portion provided in the chamber and holding the substrate to be processed, An exhaust port formed in the chamber, Exhaust means for exhausting the atmosphere in the chamber from the exhaust port, Rectifying means provided in the chamber for forming a flow path of an air flow flowing in one direction on the upper surface of the substrate by an exhausting operation of the exhausting means, A supply mechanism provided on a side of the substrate on an upstream side of an air flow formed by the operation of the exhaust means, An air supply means for supplying inert gas from the air supply mechanism to the processing space in the chamber, Wherein the rectifying means includes a first rectifying portion provided around the exhaust port between the holding portion and the bottom surface of the chamber so as to form one opening portion on the side portion and forming a communication path communicating the opening portion with the exhaust port, absence And drying the dried product. delete delete 2. The apparatus according to claim 1, wherein as the rectifying means, a second rectifying member adjacent to the first rectifying member and covering the lower space of the target substrate held by the holding portion is further provided at both right and left sides of the communication path Wherein the pressure-reducing drying apparatus is a vacuum drying apparatus. The apparatus according to claim 1, wherein the exhaust port is formed on a side of the substrate to be processed, Wherein the rectifying means includes a third rectifying member that fills at least a space below the periphery of the target substrate held by the holding portion. The apparatus according to claim 1, wherein the rectifying means includes a fourth rectifying member having the exhaust port formed therein, The exhaust port is formed in the vicinity of a rim portion of the target substrate held by the holding portion, Wherein at least the lower space of the edge of the substrate on the side of the exhaust port and the space below the edge of the substrate on the opposite side of the exhaust port are filled with the substrate by the fourth rectifying member. 2. The apparatus according to claim 1, wherein the rectifying means includes a fifth rectifying member having the exhaust port and the feed mechanism, Wherein the exhaust port and the air supply mechanism are respectively formed in the vicinity of the periphery of the substrate with the substrate to be processed held therebetween, Wherein at least a space below the edge of the substrate on the side of the exhaust port and a space below the edge of the substrate on the opposite side of the exhaust port are filled with the substrate by the fifth rectifying member. The apparatus according to claim 1, wherein the exhaust port is formed on a side of the substrate to be processed, Wherein the rectifying means includes a sixth rectifying member which at least covers the lower space of the edge of the substrate on the opposite side with respect to the exhaust port via the substrate held by the holding portion. The apparatus according to claim 1, wherein the exhaust port is formed on a side of the substrate to be processed, And as the rectifying means, a seventh rectifying member having the feed mechanism, In the seventh rectifying member, the feeding mechanism is formed on the opposite side of the exhaust port with the target substrate held by the holding portion interposed therebetween, Wherein at least a space below the edge of the substrate on the side of the feeding mechanism is filled by the seventh rectifying member. The apparatus according to claim 1, wherein as the rectifying means, an eighth rectifying member is provided at both right and left sides of the flow path formed on the upper surface of the target substrate to fill or block at least a part of the spaces on the left and right sides of the substrate And a drying unit for drying the reduced-pressure drying apparatus. 2. The reduced-pressure drying apparatus according to claim 1, further comprising an elevating means for elevating and lowering the holding section in the chamber. A reduced-pressure drying method for forming a coating film by subjecting a substrate to which a treatment liquid is applied to a reduced-pressure drying treatment of the treatment liquid using the reduced-pressure drying apparatus according to claim 1, Holding the substrate to be processed in the holding section; Wherein the step of evacuating the processing space in the chamber by the evacuation means and supplying the inert gas into the chamber by the supply means is executed. 13. The method according to claim 12, wherein in the step of reducing the pressure of the processing space in the chamber by the exhaust means and supplying the inert gas into the chamber by the air supply means, Wherein the supply of the air is started in the chamber before or simultaneously with the start of the pressure reduction in the chamber. 13. The method according to claim 12, wherein in the step of reducing the pressure of the processing space in the chamber by the exhaust means and supplying the inert gas into the chamber by the air supply means, Starting decompressing the processing space in the chamber; Wherein the step of supplying the inert gas into the chamber is performed when the atmospheric pressure in the chamber reaches the predetermined value after the pressure is reduced or when a predetermined time has elapsed from the start of the pressure reduction in the chamber.

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