KR101555881B1 - Heat treatment apparatus using electron-beam - Google Patents

Abstract

The present invention relates to a heat treatment apparatus using an electron beam which includes a first electrode plate, a second electrode plate, a first protrusion, a second protrusion, and an opening part. The second electrode plate is arranged to be separated from the first electrode plate with a preset distance. The first protrusion is formed on the center of the first electrode plate to protrude to the second electrode plate and generates an electron in a space with the second electrode plate. The second protrusion is formed on both sides of the first protrusion to protrude to the second electrode plate and generates the electrons in a space with the second electrode plate. The length of the second protrusion is shorter than the length of the first protrusion. The opening part is formed on the second electrode plate and emits the electron generated between the first electrode plate and the second electrode plate to the outside with an electron beam type. The energy of the electron beam discharged from the first protrusion is larger than the energy of the electron beam discharged from the second protrusion.

Description

[0001] Heat treatment apparatus using electron beam [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heat treatment apparatus using an electron beam, and more particularly, to a heat treatment apparatus using an electron beam to heat a surface of a substrate using an electron beam module for generating an electron beam.

As a flat panel display employing a thin film transistor using polysilicon (poly-Si) has been extensively studied and developed, a flat panel display using polysilicon can form a thin film transistor and a driving circuit on the same substrate. The process of connecting the driving circuit is unnecessary and the process is simplified. In addition, polysilicon has a field effect mobility of about 100 to 200 times larger than that of amorphous silicon, and thus has a high response speed and excellent temperature and light stability.

The polysilicon may be formed by direct deposition or by depositing amorphous silicon (a-Si) by chemical vapor deposition (CVD) and then crystallizing the amorphous silicon (a-Si). Excimer laser annealing (ELA) is a typical method for forming polysilicon after depositing amorphous silicon and crystallizing the amorphous silicon.

The excimer laser annealing method is the most widely used crystallization method and is an annealing method using pulsed ultraviolet (UV) excimer laser. Quality amorphous silicon can be formed by annealing the amorphous silicon thin film using an excimer laser. The amorphous silicon is relatively heat-treated in a short period of time despite the high temperature at which the amorphous silicon is melted by the laser, thereby not damaging the substrate.

However, the excimer laser itself included in the excimer laser annealing apparatus is very expensive, and an optical system for shaping a laser beam output from an excimer laser into a desired shape is also sold at a high price. As a result, there is a problem that the manufacturing cost of the flat panel display device increases due to an increase in manufacturing cost of the excimer laser annealing device capable of annealing the amorphous silicon thin film.

Therefore, an object of the present invention is to solve such conventional problems, and it is an object of the present invention to reduce the manufacturing cost of a heat treatment apparatus for a substrate by generating an electron beam whose energy profile is not uniform, And a heat treatment apparatus using an electron beam capable of coping with heat treatment conditions in an interchangeable manner.

According to an aspect of the present invention, there is provided a heat treatment apparatus using an electron beam, including: a first electrode plate; A second electrode plate spaced apart from the first electrode plate by a predetermined distance; A first protrusion protruding from the center of the first electrode plate toward the second electrode plate and generating electrons with the second electrode plate; A second protrusion formed to protrude from both sides of the first protrusion toward the second electrode plate and generate electrons with the second electrode plate, the second protrusion being shorter than the first protrusion; And an opening formed in the second electrode plate for discharging electrons generated between the first electrode plate and the second electrode plate in the form of an electron beam to the outside, wherein the electron beam emitted from the first protrusion And the energy is larger than the energy of the electron beam emitted from the second protrusion.

In the heat treatment apparatus using an electron beam according to the present invention, a plurality of first protrusions are provided, a plurality of first protrusions are arranged in a line shape, a plurality of second protrusions are provided, and a plurality of second protrusions And may be arranged in a line shape in parallel with the plurality of first protrusions.

In the heat treatment apparatus using an electron beam according to the present invention, the first protrusion is formed to protrude from the opposite side of the first protrusion toward the second electrode plate, and electrons are generated between the second protrusion and the second electrode plate And a third protrusion having a shorter length than the second protrusion, and emits an electron beam having an energy profile at an energy level at a central portion and an energy gradually decreasing toward an edge portion.

The apparatus may further include a power controller capable of selectively supplying or blocking power to the first protrusion or the second protrusion in the heat treatment apparatus using the electron beam according to the present invention.

According to another aspect of the present invention, there is provided a heat treatment apparatus using an electron beam, including: a first electrode plate; a second electrode plate spaced apart from the first electrode plate by a predetermined distance; A first protrusion formed to protrude toward the second electrode plate and generate electrons between the second electrode plate and the second electrode plate; and a second protrusion formed on the second electrode plate, between the first electrode plate and the second electrode plate A first electron beam module having an opening for emitting generated electrons outward in the form of an electron beam; And a second electrode plate disposed on both sides of the first electron beam module and having a first electrode plate, a second electrode plate spaced apart from the first electrode plate by a predetermined distance, and a second electrode plate protruding from the first electrode plate toward the second electrode plate, A second protrusion formed on the second electrode plate and having a length shorter than the first protrusion and generating electrons between the first electrode plate and the second electrode plate, And a second electron beam module having an opening for discharging the generated electrons to the outside in the form of an electron beam, wherein the energy of the electron beam emitted from the first electron beam module is larger than the energy of the electron beam emitted from the second electron beam module .

In the heat treatment apparatus using an electron beam according to the present invention, the first electron beam module is formed in a line shape, a plurality of first projections are arranged in a line form in the first electron beam module, And a plurality of second protrusions may be arranged in a line form in the second electron beam module.

In the heat treatment apparatus using the electron beam according to the present invention, the first electrode plate and the second electrode plate are disposed on opposite sides of the first electron beam module on both sides of the second electron beam module, A second protrusion part protruding from the first electrode plate toward the second electrode plate and generating electrons between the second electrode plate and a third protrusion part having a length shorter than the second protrusion part; And a third electron beam module formed on the two-electrode plate and having an opening for discharging electrons generated between the first electrode plate and the second electrode plate in the form of an electron beam to the outside, It is possible to emit an electron beam having an energy profile that becomes larger and the energy gradually decreases toward the edge portion.

The apparatus may further include a power controller capable of selectively supplying or blocking power to the first electron beam module or the second electron beam module in the heat treatment apparatus using the electron beam according to the present invention.

According to the heat treatment apparatus using the electron beam of the present invention, it is possible to reduce the manufacturing cost of the heat treatment apparatus for the substrate and cope with various heat treatment conditions in a compatible manner.

Further, according to the heat treatment apparatus using the electron beam of the present invention, a machining area having a large area can be formed on the substrate, and the machining time can be remarkably shortened.

FIG. 1 is a view schematically showing a heat treatment apparatus using an electron beam according to the present invention,
2 is a cross-sectional view of a heat treatment apparatus using an electron beam according to an embodiment of the present invention,
FIG. 3 is a view showing a state in which the first projecting portion, the second projecting portion and the third projecting portion are arranged on the first electrode plate in the heat treatment apparatus using the electron beam shown in FIG. 2,
4 is a cross-sectional view of a heat treatment apparatus using an electron beam according to another embodiment of the present invention,
Fig. 5 is a view showing a state in which the first protrusion, the second protrusion and the third protrusion are disposed on the first electrode plate in the heat treatment apparatus using the electron beam shown in Fig. 4;

Hereinafter, embodiments of a heat treatment apparatus using an electron beam according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a cross-sectional view of a heat treatment apparatus using an electron beam according to an embodiment of the present invention. FIG. 3 is a cross-sectional view of a heat treatment apparatus using an electron beam The first protruding portion, the second protruding portion, and the third protruding portion are arranged on the first electrode plate in the apparatus.

1 to 3, a heat treatment apparatus 100 using an electron beam according to the present embodiment heat-treats a surface of a substrate using an electron beam module that generates an electron beam. The heat treatment apparatus 100 includes a first electrode plate 110, And includes a second electrode plate 120, a first protrusion 130, a second protrusion 140, a third protrusion 150, an opening 160, a power source control unit 101, and a transfer unit .

The first electrode plate 110 and the second electrode plate 120 are opposed to each other and the second electrode plate 120 is disposed to be spaced apart from the first electrode plate 110 by a predetermined distance. Electrons generated between the first electrode plate 110 and the second electrode plate 120 facing each other are emitted to the outside of the electron beam module 102 in the form of an electron beam E, E may be used to perform the heat treatment of the substrate 1. [

A sealing member 170 is disposed at an edge portion between the first electrode plate 110 and the second electrode plate 120 and a sealing member 170 is disposed between the first electrode plate 110 and the second electrode plate 120, Is sealed in a vacuum state.

The first electrode plate 110 and the second electrode plate 120 may be formed in various shapes. For example, it may be formed into a circular plate shape or a rectangular plate shape. The shape of the irradiation region formed by the electron beams E emitted from one electron beam module can be changed according to the fabrication shapes of the first electrode plate 110 and the second electrode plate 120. When the first electrode plate 110 and the second electrode plate 120 are formed into a circular plate shape, the irradiation region becomes a circular shape, and when the rectangular plate shape is formed, the irradiation region becomes a rectangular shape. Thus, the shape of the irradiation region of the electron beams E can be changed by changing the shapes of the first electrode plate 110 and the second electrode plate 120, and thereby various shapes suitable for various heat treatment processes can be adjusted in a compatible manner .

The first protrusions 130 protrude from the center of the first electrode plate 110 toward the second electrode plate 120 and generate electrons with the second electrode plate 120. As shown in FIG. 3, a plurality of first protrusions 130 are provided, and a plurality of first protrusions 130 are arranged in a line form on the first electrode plate 110.

The second protrusions 140 protrude from both sides of the first protrusion 110 toward the second electrode plate 120 and generate electrons with the second electrode plate 120. 3, a plurality of second protrusions 140 are formed, and a plurality of second protrusions 140 are formed on the first electrode plate 110 in parallel with the plurality of first protrusions 130, As shown in FIG.

The length L2 of the second protrusion 140 is shorter than the length L1 of the first protrusion 130. The distance D1 between the end of the first protrusion 130 and the second electrode plate 120 is shorter than the distance D2 between the end of the second protrusion 140 and the second electrode plate 120. [ Since the energy of the generated electron beam is proportional to the voltage applied to the two members for generating electrons and is inversely proportional to the distance between the two members for generating electrons, the energy of the electron beam E1 emitted from the first projection 130 Becomes larger than the energy of the electron beam (E2) emitted from the protrusion (140).

The third protrusion 150 protrudes from the opposite side of the first protrusion 130 of the second protrusion 140 toward the second electrode plate 120 and protrudes from the second electrode plate 120 Lt; / RTI > A first protrusion 130, a second protrusion 140, and a third protrusion 150 are sequentially formed along the direction from the center to the edge of the first electrode plate 110.

3, a plurality of third protrusions 150 are formed and a plurality of third protrusions 150 are formed on the first electrode plate 110 in parallel with the plurality of second protrusions 140, As shown in FIG.

Since the length L3 of the third protrusion 150 is shorter than the length L2 of the second protrusion 140, the distance D2 between the end of the second protrusion 140 and the second electrode plate 120 Is shorter than the distance (D3) between the end of the third projection (150) and the second electrode plate (120). The energy of the electron beam E2 emitted from the second protrusion 140 is greater than the energy of the electron beam E3 emitted from the third protrusion 150. [

The first protrusions 130, the second protrusions 140, and the third protrusions 150 may have various shapes such as polygonal pyramids, cones, and cylinders. In this embodiment, the shape of the cones is shown as an example.

The opening 160 is formed in the second electrode plate 120, and electrons generated between the first electrode plate 110 and the second electrode plate 120 are emitted to the outside in the form of an electron beam.

The first electrode plate 110, the second electrode plate 120, the first protrusion 130, the second protrusion 140, the third protrusion 150, and the opening 160, (102).

The power control unit 101 may selectively supply or cut off power to the electron beam module 102. That is, the first protrusion 130, the second protrusion 140, and the third protrusion 150 can be selectively supplied with power or shut off.

The transfer unit (not shown) transfers the electron beam module 102 along the left-right direction A1 or the up-down direction A2.

When the processing area formed by the electron beams E emitted from the electron beam module 102 is smaller than the entire area of the substrate 1, the electron beam module 102 is transferred to the entire substrate 1 while being transferred in the left- Heat treatment is carried out. When the thickness of the substrate 1 is changed, the distance between the electron beam module 102 and the substrate 1 is appropriately adjusted while the electron beam module 102 is transferred in the up and down direction A2, The heat treatment is performed.

A linear drive unit (not shown) for transferring the electron beam module 102 along the left-right direction A1 or the up-and-down direction A2 may be used as the transfer unit. The linear drive unit may be a combination of a rotary motor and a ball screw, Motor or the like. It is also possible to carry out the heat treatment process while transferring the substrate 1 along the left-right direction A1 or the up-and-down direction A2 by providing a transfer unit on a substrate support (not shown) for supporting the substrate 1. [

When the heat treatment apparatus 100 using the electron beam configured as described above is used, the electron beam having the energy at the center portion and the energy profile at which the energy decreases gradually toward the edge portion can be emitted. The energy of the electron beam E1 emitted from the first protrusion 130 positioned at the center is highest and the energy of the electron beam emitted from the second protrusion 140 and the third protrusion 150 disposed along the direction from the center toward the edge E2, and E3 are gradually reduced, so that an electron beam having the above-described energy profile can be emitted.

When the electron beam having the above-described energy profile is used in the heat treatment process of the substrate, it can be compatible with various heat treatment conditions. For example, when an electron beam having a Gaussian energy profile is required, power is supplied to both the first protrusion 130, the second protrusion 140, and the third protrusion 150 through the power control unit 101, Can be utilized in the process.

When the temperature condition of the heat treatment process is high, power is supplied to the first protrusion 130 through the power control unit 101 and power is cut off to the second protrusion 140 and the third protrusion 150, The electron beam E1 having a relatively large energy emitted from the electron beam 130 can be utilized in the heat treatment process of the substrate. On the other hand, when the temperature condition of the heat treatment process is low, the power is turned off to the first protrusion 130 through the power control unit 101 and power is supplied to the second protrusion 140 or the third protrusion 150, The electron beams E2 and E3 having relatively small energy emitted from the first protrusion 140 or the third protrusion 150 can be utilized in the heat treatment process of the substrate.

The heat treatment apparatus using the electron beam according to the present embodiment configured as described above generates an electron beam having an uneven energy profile and uses the electron beam in the heat treatment process of the substrate to reduce the manufacturing cost of the heat treatment apparatus for the substrate, It is possible to obtain an effect that compatibility can be achieved.

Further, the heat treatment apparatus using the electron beam of this embodiment is capable of drastically shortening the machining time by forming a machining area having a large area on the substrate by performing heat treatment using electron beams emitted from a plurality of projections arranged in a line form Effect can be obtained.

4 is a cross-sectional view of a heat treatment apparatus using an electron beam according to another embodiment of the present invention. FIG. 5 is a cross-sectional view of a heat treatment apparatus using an electron beam shown in FIG. 4, in which a first protrusion, a second protrusion, And the protrusions are respectively disposed. In Figs. 4 and 5, the members denoted by the same reference numerals as those shown in Figs. 1 to 3 have the same configuration and function, and a detailed description thereof will be omitted.

4 and 5, the heat treatment apparatus using an electron beam according to the present embodiment includes a first electron beam module 210, a second electron beam module 220, a third electron beam module 230, (101), and a transfer unit.

The first electron beam module 210 includes a first electrode plate 211, a second electrode plate 212 spaced a predetermined distance from the first electrode plate 211, A first protrusion 213 protruding toward the two-electrode plate 212 and generating electrons between the first electrode plate 212 and the second electrode plate 212 and a second protrusion 213 formed on the second electrode plate 212, 211 and the second electrode plate 212 in the form of an electron beam to the outside.

As shown in FIG. 5, the first electron beam module 210 is formed in a line shape, and a plurality of first projections 213 are arranged in a line shape in the first electron beam module 210.

The second electron beam module 220 is disposed on both sides of the first electron beam module 210 and includes a first electrode plate 211, a second electrode plate 212, a second electrode plate 211, A second protrusion 223 protruding toward the electrode plate 212 and having a length shorter than that of the first protrusion 213, and an opening 214. 5, the second electron beam module 220 is formed in a line shape, and the plurality of second projections 223 are arranged in a line shape in the second electron beam module 220. [

The third electron beam module 230 is disposed on the opposite side of the first electron beam module 210 on both sides of the second electron beam module 220 and includes a first electrode plate 211, a second electrode plate 212, A third protrusion 233 protruding from the first electrode plate 211 toward the second electrode plate 212 and having a length shorter than that of the second protrusion 223 and an opening 214. 5, the third electron beam module 230 is formed in a line shape, and the plurality of third projections 233 are arranged in a line shape in the third electron beam module 230.

The functions of the first electrode plate 211, the second electrode plate 212, the first protrusion 213, the second protrusion 223, the third protrusion 233 and the opening 214 are the same as those of the embodiment The first electrode plate 110, the second electrode plate 120, the first protrusion 130, the second protrusion 140, the third protrusion 150, and the opening 160 are substantially the same as those of the first electrode plate 110, the second electrode plate 120, Duplicate description is omitted.

The power control unit 101 may selectively supply or cut off power to the first electron beam module 210, the second electron beam module 220, and the third electron beam module 230.

In this embodiment, the first projecting portion 213, the second projecting portion 223 and the third projecting portion 233 are provided on the first electron beam module 210, the second electron beam module 220 and the third electron beam module 230, respectively And is formed separately.

The energy of the electron beam E1 emitted from the first electron beam module 210 is largest due to the difference in the distance D1, D2 and D3 between the end of the protrusion and the second electrode plate 212, The energy of the electron beam E2 emitted from the second electron beam module 220 and the energy of the electron beam E3 emitted from the third electron beam module 230 are gradually decreased. Therefore, it is possible to emit an electron beam having an energy profile in which the energy is the largest at the center portion and the energy gradually decreases toward the edge portion.

In the embodiments of the present invention, the heat treatment apparatus using the electron beam according to the present invention is described as an example of the process of crystallizing the amorphous silicon thin film. However, the heat treatment apparatus using the electron beam of the present invention can be applied to various technical fields.

For example, the heat treatment apparatus using an electron beam of the present invention can be used in a process of forming a thin film for a transparent electrode by depositing a transparent electrode material on a substrate surface in the process of forming a transparent electrode of a flat panel display device, and then performing a heat treatment. Through such a heat treatment process, the electric conductivity of the transparent electrode thin film can be improved, the thin film can be made denser, the surface roughness can be improved, and the light transmittance can be increased.

The scope of the present invention is not limited to the above-described embodiments and modifications, but can be implemented in various forms of embodiments within the scope of the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

1: substrate
100: Heat treatment apparatus using electron beam
110: first electrode plate
120: second electrode plate
130: first protrusion
140: second protrusion
160: opening

Claims (8)

A first electrode plate;
A second electrode plate spaced apart from the first electrode plate by a predetermined distance;
A first protrusion protruding from the center of the first electrode plate toward the second electrode plate and generating electrons with the second electrode plate;
A second protrusion formed to protrude from both sides of the first protrusion toward the second electrode plate and generate electrons with the second electrode plate, the second protrusion being shorter than the first protrusion; And
And an opening formed in the second electrode plate for discharging electrons generated between the first electrode plate and the second electrode plate in the form of an electron beam to the outside,
Wherein the energy of the electron beam emitted from the first protrusion is greater than the energy of the electron beam emitted from the second protrusion. The method according to claim 1,
A plurality of first protrusions are provided, a plurality of first protrusions are arranged in a line form,
Wherein a plurality of the second protrusions are provided and a plurality of second protrusions are arranged in a line form parallel to the plurality of first protrusions. The method according to claim 1,
And a second electrode plate that is formed to protrude toward the second electrode plate on the opposite side of the first protrusion from both sides of the second protrusion and generates electrons between the second electrode plate and the third electrode plate, Further comprising:
And emits an electron beam having an energy profile in which the energy is the largest at the central portion and the energy gradually decreases toward the edge portion. The method according to claim 1,
Further comprising: a power control unit capable of selectively supplying or blocking power to the first protrusion or the second protrusion. A plasma display apparatus comprising: a plasma display panel comprising a first electrode plate, a second electrode plate spaced apart from the first electrode plate by a predetermined distance, and a second electrode plate protruding from the first electrode plate toward the second electrode plate, A first electrode plate having a first protrusion for generating electrons and an opening for discharging electrons generated in the second electrode plate between the first electrode plate and the second electrode plate in the form of an electron beam to the outside, ; And
A first electrode plate disposed on both sides of the first electron beam module, a second electrode plate disposed to be spaced apart from the first electrode plate by a predetermined distance, and a second electrode plate protruding from the first electrode plate toward the second electrode plate A second protrusion formed on the second electrode plate and generating electrons between the first electrode plate and the second electrode plate and having a length shorter than the first protrusion; And a second electron beam module having an opening for emitting electrons in the form of an electron beam to the outside,
Wherein the energy of the electron beam emitted from the first electron beam module is greater than the energy of the electron beam emitted from the second electron beam module. 6. The method of claim 5,
Wherein the first electron beam module is formed in a line shape, a plurality of first projections are arranged in a line form in the first electron beam module,
Wherein the second electron beam module is formed in a line shape and a plurality of second projections are arranged in a line form in the second electron beam module. 6. The method of claim 5,
A second electrode plate disposed on an opposite side of the first electron beam module from both sides of the second electron beam module and including a first electrode plate, a second electrode plate spaced apart from the first electrode plate by a predetermined distance, A third protrusion formed on the second electrode plate and protruding toward the second electrode plate and generating electrons between the second electrode plate and the second protrusion and having a shorter length than the second protrusion; And a third electron beam module having an opening for emitting electrons generated between the second electrode plates in the form of an electron beam to the outside,
And emits an electron beam having an energy profile in which the energy is the largest at the central portion and the energy gradually decreases toward the edge portion. 6. The method of claim 5,
Further comprising a power controller configured to selectively supply or cut off power to the first electron beam module or the second electron beam module.

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