KR101506085B1 - Nano alloy thin film and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a nanocomposite thin film and a method of manufacturing the same, and more particularly, to a nanocomposite thin film which can remarkably improve thermal stability and effectively block infrared rays.

Description

[0001] Nano-alloy thin film and manufacturing method thereof [0002]

The present invention relates to a nanocomposite thin film and a method of manufacturing the same, and more particularly, to a nanocomposite thin film which can remarkably improve thermal stability and effectively block infrared rays.

Silver nanoparticles are used not only as electrode materials for displays and solar cells, but also as low-emissivity materials for shielding solar radiation. The low radiation thin film is a material that uses silver (Ag) thin film to maintain transparency in visible light and reduce emissivity by reflecting light (having heat energy) in a near infrared to infrared wavelength range. The material is applied to glass for construction or automobile, and it is provided for the purpose of transmitting, reflecting, and absorbing solar energy emitted from a building or a vehicle through a window to a specific wavelength or wavelength range. One of the important functions of these glasses is to reflect the thermal radiation lines as a function to prevent the energy loss from buildings or vehicles inside and outside the summer and winter.

Since the characteristics of the low radiation thin film depend on the electrical conductivity (low electric resistance) of the silver (Ag) thin film, the resistance of the thin film should be reduced as much as possible. However, the conventional nano-alloy thin film has an electrical resistance of 40 μΩ-cm or more, which is very high compared to a resistance of about 1.6 μΩ-cm which is a bulk state. In addition, there was a problem that the thermal stability was low enough to cause aging effect even at room temperature with time (deterioration of low radiation property with increase of resistance).

In order to be used as a low-emission thin film material, a low-emission glass based on a nano silver (Ag) thin film formed in a multi-layer form is subjected to a tempering process (tempering heat treatment process) It had to last for several minutes. However, conventional low radiation thin films tend to lose thermal stability and increase resistance in the enhanced heat treatment process.

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a nano alloy thin film having improved thermal stability to withstand temperatures of 600 ° C for several minutes and low transmittance of near infrared rays and infrared rays, There is a purpose.

The present invention relates to a substrate; And an alloy thin film layer formed on at least one side of the substrate; Wherein the alloy thin film layer comprises a silver (Ag) -molybdenum (Mo) alloy.

According to a preferred embodiment of the present invention, the alloy thin film layer may have an average thickness of 1 to 100 nm.

According to another preferred embodiment of the present invention, a thermal stabilization layer is further provided between the substrate and the alloy thin film layer, and the thermal stabilization layer may include titanium nitride (TiN).

According to another preferred embodiment of the present invention, the thermally stabilized layer may have an average thickness of 1 to 20 nm.

According to another preferred embodiment of the present invention, the thermal stabilization layer further comprises an oxidation protection layer on the other side of the deposited alloy thin film layer, wherein the oxidation protection layer is formed of titanium nitride (TiN) and titanium oxide nitride (TiON) Or at least one of the groups.

According to another preferred embodiment of the present invention, the alloy thin film layer further includes a surface protective layer on the other side of the oxidation protective layer, and the surface protective layer may include titanium oxide nitride (TiON).

According to another preferred embodiment of the present invention, the silver-molybdenum alloy may include 0.5 to 5.0 atomic percent of molybdenum.

According to another preferred embodiment of the present invention, the nano-alloy thin film has a resistance measured by a four-point probe method after heat treatment at 350 ° C and an argon (Ar) gas atmosphere of 5 to 40 μΩ-cm Lt; / RTI >

The present invention also provides a method for manufacturing a semiconductor device, comprising: a first step of pretreating a substrate; And a second step of laminating an alloy thin film layer containing a silver (Ag) -molybdenum (Mo) alloy on one surface of the pretreated substrate to form a nanoclay thin film; The present invention also provides a method of manufacturing a nano-alloy thin film.

According to a preferred embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising the steps of: laminating a thermally stabilized layer containing titanium nitride (TiN) on one surface of a substrate pretreated after the first step, And the alloy thin film layer may be laminated on the other surface of the laminated thermally stabilized layer.

According to another preferred embodiment of the present invention, there is provided a method for manufacturing a semiconductor device, comprising the steps of: (a) stacking an oxidation protection layer on the other surface of an alloy thin film layer on which a substrate is laminated after the second step; And the oxidation protection layer may include at least one of the group consisting of titanium nitride (TiN) and titanium oxide nitride (TiON).

The present invention has the effect of providing a nano-alloy thin film having a much lower resistance than conventional low-emission materials and having improved thermal stability even in a post-tempering process (tempering heat treatment process).

In addition, the nano-alloy thin film of the present invention effectively reduces the near-infrared rays and infrared rays transmitted from the outside to the building and the automobile interior in the summer, thereby reducing the room temperature and thereby reducing the cooling energy. It has an effect of reducing heating energy by blocking the loss of near-infrared rays and infrared rays to the outside.

In addition, when the nano-alloy thin film of the present invention is used as an automobile glass, it also has an additional effect of delaying the deterioration of the internal material of the automobile by lowering the temperature of the plastic surface inside the automobile along with the noise shielding effect.

FIG. 1 is a cross-sectional view of a nanometer-scale alloy thin film according to a preferred embodiment of the present invention.
2 is a cross-sectional view of a nanometer-scale alloy thin film according to another embodiment of the present invention.
3 is a cross-sectional view of a nanometer-scale alloy thin film according to another embodiment of the present invention.
4 is a cross-sectional view of a nanometer-scale alloy thin film according to another embodiment of the present invention.
5 is a cross-sectional view of a nanocrystalline thin film according to another preferred embodiment of the present invention.
6 is a graph showing changes in resistance and surface roughness of a thin film measured in Experimental Example 3. FIG.
7 shows the transmittance results measured in Experimental Example 5. FIG.

Hereinafter, the present invention will be described in more detail.

As described above, the conventional nano silver thin film has an electric resistance of 40 μΩ-cm or more, which is very high compared to a resistance of about 1.6 μΩ-cm, which is a bulk resistance. Further, there was a problem that the thermal stability was low enough to cause aging effect even at room temperature over time (deterioration of low radiation property due to increase of resistance).

Accordingly, And an alloy thin film layer formed on at least one side of the substrate; Wherein the alloy thin film layer provides a nano-alloy thin film including a silver (Ag) -molybdenum (Mo) alloy, thereby providing a silver nano thin film which is lower than the electric resistance of the conventional nano-alloy thin film and is also excellent in thermal stability .

1 is a cross-sectional view of a nano-alloy thin film according to a preferred embodiment of the present invention. The nanocrystalline thin film of the present invention will be described below.

The nanoclay thin film 100 of the present invention comprises a substrate 110; And an alloy thin film layer (120) formed on at least one side of the substrate; And the alloy thin film layer 120 may include a silver (Ag) -molybdenum (Mo) alloy.

The substrate 110 is not particularly limited as long as it is a material capable of forming a nano thin film coating that typically includes silver, but is preferably glass, silicon, stainless steel, polyethylene terephthalate (PET), and polypropylene ; And polypropylene), more preferably glass.

Further, the substrate is not particularly limited as long as it is usually used as a low-radiated material, but preferably an average thickness of 3 to 8 mm can be used.

Molybdenum alloy contained in the alloy thin film layer 120, and preferably 0.5 to 5.0 at% (atomic percent) of molybdenum in total silver-molybdenum may be used, Preferably, molybdenum is contained in an amount of 1.0 to 4.5 at% (atomic percent) of the entire silver-molybdenum.

If molybdenum is contained in an amount of less than 0.5 at% in the entire silver-molybdenum, there may arise a problem that the thermal stability improvement effect and the electric resistance reduction effect of the nano alloy thin film do not occur. If molybdenum oxide is contained in an amount exceeding 5.0 at%, molybdenum forms an independent phase, which may cause a problem that the electrical resistance of the nanosized thin film increases sharply.

In addition, the alloy thin film layer is not particularly limited as long as it is a thickness of a nano thin film coating containing silver which is usually manufactured or sold, but it may preferably have an average thickness of 1 to 100 nm, 50 nm.

On the other hand, when the alloy thin film layer is directly laminated on one surface of the substrate, there is a problem that the improvement in thermal stability of the nanoclay thin film is limited.

2 that is a preferred embodiment of the present invention provides a nanocrystalline thin film 200 further comprising a thermal stabilization layer 220 between the substrate 210 and the alloy thin film layer 230 to further improve thermal stability Can be provided.

The thickness of the thermally stabilized layer 220 is not particularly limited as long as it does not lower the visible light transmittance of the nanoclay thin film, but preferably the average thickness is 1 to 20 nm.

If the average thickness of the thermally stabilized layer is more than 20 nm, the visible light transmittance of the nano-alloy thin film is remarkably low, which may cause a problem that it can not be used as a low-emission material, an electrode film of a solar cell, or a transparent electrode of a display .

However, when the nano-alloy thin film fabricated without the layer for protecting one side of the alloy thin film layer is exposed to the post-process strengthening heat treatment process or the high temperature, the silver (Ag) crystal of the alloy thin film layer grows And / or agglomeration may occur.

3, which is another preferred embodiment of the present invention, includes a substrate 310; A thermal stabilization layer 320; Alloy thin film layer 330; And an oxidation protection layer 340 are sequentially stacked to provide a nano alloy thin film 300 that prevents the oxidation of the alloy thin film layer during the tempering heat treatment process.

4, which is another preferred embodiment of the present invention, includes a substrate 410; A thermal stabilization layer 420; Alloy thin film layer 430; And an oxidation protection layer 440 are sequentially stacked to provide a nano alloy thin film 300 that prevents the oxidation of the alloy thin film layer in the course of the tempering heat treatment process.

The oxidation protection layers 340 and 440 serve to prevent oxidation of the alloy thin film layer and are not particularly limited as long as they are used for preventing oxidation of the nano-alloy thin film, but titanium nitride (TiN) or titanium nitride (TiN) and titanium oxide nitride (TiON).

The thickness of the oxidation protection layers 340 and 440 is not particularly limited as long as it does not lower the visible light transmittance of the nano-alloy thin film, but preferably the average thickness is 1 to 20 nm.

If the average thickness of the oxidation protection layers 340 and 440 is more than 20 nm, the visible light transmittance of the nano-alloy thin film is remarkably low, which can not be used as a low-emission material, an electrode film of a solar cell, Problems can arise.

5, which is another preferred embodiment of the present invention, includes a substrate 510; A thermal stabilization layer 520; Alloy thin film layer 530; An oxidation protection layer 540; And a surface protective layer 550 are sequentially laminated on the surface of the nano alloy thin film 500 to prevent the oxidation of the alloy thin film layer during the tempering heat treatment process.

The oxidation protection layer 540 serves to prevent the oxidation of the alloy thin film layer and is not particularly limited as long as it is used for preventing oxidation of the nano-alloy thin film, but it may preferably include titanium nitride (TiN) .

Furthermore, the nanocrystalline thin film of the present invention can exhibit a resistance of 5 to 40 μΩ-cm measured by a four point probe method after heat treatment at 350 ° C. and argon (Ar) atmosphere.

In addition, the present invention provides a method for manufacturing a semiconductor device, comprising: a first step of pretreating a substrate; And a second step of laminating an alloy thin film layer containing a silver (Ag) -molybdenum (Mo) alloy on one surface of the pretreated substrate to form a nanoclay thin film; The present invention also provides a method of manufacturing a nano-alloy thin film.

First, the substrate is pretreated in one step.

The pretreatment is not particularly limited as long as it is carried out in the course of manufacturing the nano-alloy thin film. For example, the pretreatment can be carried out by one method.

The substrate is not particularly limited as long as it is a material in which a nano thin film coating containing silver is typically formed. The substrate is preferably made of glass, silicon, stainless steel, polyethylene terephthalate (PET), polypropylene (PP) , And more preferably one or more kinds of glass.

Further, the substrate is not particularly limited as long as it is usually used as a low-radiated material, but preferably an average thickness of 3 to 8 mm can be used.

Next, in step 2, an alloy thin film layer containing silver (Ag) -molybdenum (Mo) alloy is laminated on one surface of the pretreated substrate to prepare a nanoclay thin film.

The silver-molybdenum alloy contained in the alloy thin-film layer is not particularly limited as long as it contains a silver-molybdenum alloy conventionally manufactured or sold, but molybdenum is preferably used in an amount of 0.5 - 5.0 at% (atomic percent) may be used, and more preferably 1.0 to 4.5 at% (atomic percent) of molybdenum in the entire silver-molybdenum can be used.

If molybdenum is contained in an amount of less than 0.5 at% in the entire silver-molybdenum, there may arise a problem that the thermal stability improvement effect and the electric resistance reduction effect of the nano alloy thin film do not occur. If molybdenum oxide is contained in an amount exceeding 5.0 at%, molybdenum forms an independent phase, which may cause a problem that the electrical resistance of the nanosized thin film increases sharply.

In addition, the alloy thin film layer is not particularly limited as long as it is a thickness of a nano thin film coating containing silver which is usually manufactured or sold, but it may preferably have an average thickness of 1 to 100 nm, 50 nm.

The layer of the alloy thin film layer is not particularly limited as long as it is a method commonly used in the manufacture of nanostructured thin films, but it is preferable to use a sputtering method, more preferably 1 × 10 ^-6 to 5 × 10 ^-7 torr ) And an applied electric power of 50 to 100 W (W) by sputtering.

On the other hand, when the alloy thin film layer is directly laminated on one surface of the substrate, there is a problem that the improvement in thermal stability of the nanoclay thin film is limited.

Accordingly, in a preferred embodiment of the present invention, the method may further include a step (1-1) of laminating a thermally stabilized layer containing titanium nitride (TiN) on one surface of the substrate pretreated after the first step. In addition, after step 1-1, step 2 may be to laminate the alloy thin layer on the other side of the thermally stabilized layer on which the substrate is laminated.

However, when the nano-alloy thin film formed without the layer for protecting one side of the alloy thin film layer is subjected to the post-process strengthening heat treatment process or the high temperature exposure, the silver (Ag) crystal of the alloy thin film layer grows (coarsely) and / May cause agglomeration.

Accordingly, in another preferred embodiment of the present invention, there is provided a method for manufacturing a semiconductor device, comprising the steps of: (3) stacking an oxidation protection layer on the other side of an alloy thin film layer on which a substrate is laminated after the above two steps; As shown in FIG.

The oxidation protection layer may include at least one selected from the group consisting of titanium nitride (TiN) and titanium oxide nitride (TiON).

Hereinafter, the structure and effect of the present invention will be described in more detail with reference to examples and comparative examples. However, this embodiment is only an example for explaining the present invention in more detail, and the scope of the present invention is not limited to these embodiments.

[ Example ]

Example  One.

The glass substrate (soda lime glass) was cut into 2 × 2 cm 2, washed with distilled water, and then washed with acetone and trichlorethylene for 30 minutes. Thereafter, the glass substrate was dried in a glove box of argon (Ar) atmosphere to prepare a pre-treated glass substrate.

Then, the pretreated glass substrate was deposited with a silver-molybdenum alloy thin film by a sputtering method to prepare a nanor alloy thin film.

The silver (Ag) was a disc having an average diameter of 2 inches, and a rectangular molybdenum plate was mechanically compressed and bonded to the silver disc surface. The size of the molybdenum plate used was one having a surface area corresponding to 0.5% of the silver (Ag) disk surface area based on the surface area ratio.

The deposition was performed at an initial vacuum of 10 ^-7 torr., An applied electric power of 80 Watt, a target of Ag-Mo alloy, a substrate size of 2 x 2 cm 2, and the substrate was not heated. The alloy thin film layer had an average thickness of 5 nm.

Example  2.

A nano alloy thin film was prepared in the same manner as in Example 1, except that a silver-molybdenum alloy containing molybdenum 2.0 at% was used and an alloy thin film layer was deposited at 10 nm.

Example  3.

Alloy thin film layer was deposited at a thickness of 20 nm, a nano-alloy thin film was prepared in the same manner as in Example 2. [

Example  4.

A nano-alloy thin film was prepared in the same manner as in Example 2 except that a silver-molybdenum alloy containing molybdenum 3.0 at% was used.

Example  5.

Alloy thin film layer was deposited at a thickness of 20 nm, a nano-alloy thin film was prepared in the same manner as in Example 4.

Example  6.

Except that the alloy thin film layer was deposited at a thickness of 30 nm.

Example  7.

A nano-alloy thin film was prepared in the same manner as in Example 2, except that a silver-molybdenum alloy containing 4.5 at% of molybdenum was used.

Example  8.

A nano-alloy thin film was prepared in the same manner as in Example 2 except that a silver-molybdenum alloy containing 5.0 at% of molybdenum was used.

Example  9.

Except that the alloy thin film layer was deposited at a thickness of 20 nm.

Example  10.

Under the atmosphere of an initial vacuum of 10 ^-7 torr., An applied electric power of 150 Watt and a nitrogen gas ratio of 30% (nitrogen / (argon + nitrogen) = 0.3) on the same glass substrate as in Example 1, A 10 nm thick titanium nitride (TiN) thin film (thermal stabilization layer) was deposited by sputtering on the target, and then a silver-molybdenum alloy was deposited by the same method as in Example 5 (see FIG. 2) .

Example  11.

Except that a 10 nm thick titanium nitride (TiN) thin film (oxidation protection layer) was further deposited on the upper alloy thin film layer of the nano-alloy thin film prepared in the same manner as in Example 10 by the same deposition conditions and method as in Example 10. [ 10 (see Fig. 3).

Example  12.

A nano alloy thin film was prepared in the same manner as in Example 11, except that a thermal stabilization layer and a titanium nitride thin film as an oxidation protective layer were deposited at 20 nm, respectively.

Comparative Example  One.

A nanosilver thin film was prepared in the same manner as in Example 2, except that 10 nm of silver thin film was deposited on the same glass substrate as that of Example 1.

Experimental Example  1. Electrical resistance measurement

The electrical resistances of the nanoclay thin films prepared in Examples 1 to 12 and Comparative Example 1 were measured.

The electrical resistance measurement was carried out at 25 DEG C in a four-point probe method. The measured electrical resistances are listed in Table 1 below.

division Electrical resistance (μΩ-cm) Example 1 30 Example 2 10 Example 3 8 Example 4 7 Example 5 10 Example 6 20 Example 7 12 Example 8 21 Example 9 30 Example 10 7 Example 11 7 Example 12 8 Comparative Example 1 22

As can be seen in the above Table 1, the nano-alloy thin films of Example 4 and Example 10 using the silver-molybdenum alloy containing 3.0 at% molybdenum in the nano-alloy thin film having the same alloy thin film thickness, The cell resistance was about three times lower than that of the nano-alloy thin film.

Further, in the nano-alloy thin film having the same thickness of the alloy thin film, the nano-alloy thin films of Examples 8 to 9 using the silver-molybdenum alloy containing 5.0 at% of molybdenum contained 2.0 to 4.5 at% of molybdenum -Molybdenum alloy as compared with those of Examples 2 to 5 and Example 7,

Further, in the nano-alloy thin film having the same alloy thin film thickness, the nano-alloy thin film of Example 10, which further includes a thermally stabilizing layer containing titanium nitride between the glass substrate and the alloy thin film, It was confirmed that the electrical resistance was lower than that of the alloy thin film.

In addition, the nano-alloy thin film of Example 12 including the thermally stabilized layer and the oxidation protective layer which were 10 nm thicker than those of Example 11 and Example 11 in the same nano-alloy thin film deposited using the same silver-molybdenum alloy, Showed similar electrical resistances, indicating that the increase in the thermal stabilization layer and / or the oxidation protection layer did not significantly affect the electrical resistance.

As can be seen from the above results, the nano-alloy thin film containing the silver-molybdenum alloy reduces electric resistance compared with the nano-alloy thin film including the silver thin film. As a result, the nano- Thin films were more suitable as low - emission materials.

Experimental Example  2. Transmittance measurement

Visible light, near infrared rays and infrared transmittance of the nanoclay thin films prepared in Examples 1 to 12 and Comparative Example 1 were measured.

The visible, near-infrared, and infrared transmittance measurements were performed with a UV-Visible-IR spectrometer and the wavelength ranged from 200 to 2,400 nm. The optical properties of the glass substrate during the measurement were excluded from the measured values. The visible light, the near-infrared ray and the infrared ray transmittance are shown in Table 2 below.

division Transmittance (%) Visible light (550 nm) Near infrared (1100 nm) Infrared (2000 nm) Example 1 67 60 55 Example 2 50 38 28 Example 3 28 17 6 Example 4 60 28 12 Example 5 26 11 4 Example 6 20 5 3 Example 7 57 32 15 Example 8 55 30 14 Example 9 25 8 5 Example 10 33 13 7 Example 11 65 40 15 Example 12 35 13 6 Comparative Example 1 45 38 28

As can be seen from the above Table 2, in the nano-alloy thin film having the same alloy thin film thickness, the nano-alloy thin film of Example 4 using the silver-molybdenum alloy containing 3.0 at% The visible light transmittance was 15% higher, the near infrared transmittance was 10% lower, and the infrared transmittance was 16% lower.

In addition, in the nano-alloy thin films having the same alloy thin film thickness, the nano-alloy thin films of Examples 2, 4, and 7 to 8 using the silver-molybdenum alloy thin film were compared with the nano- It was confirmed that the visible light transmittance was higher than that of the thin film, and the transmittance of near infrared rays and infrared rays was low.

Furthermore, in the case of the nano-alloy thin film using the silver-molybdenum alloy thin film containing the same amount of molybdenum, the transmittance of the near infrared and infrared light was reduced when the alloy thin film was increased from 10 nm to 20 nm Example 3, Example 4 and Example 5, Example 8 and Example 9).

In addition, in the nano-alloy thin film having the same alloy thin film thickness, the nano-alloy thin film of Example 10, which further includes a thermally stabilizing layer containing titanium nitride between the glass substrate and the alloy thin film, Increased the visible light transmittance than the alloy thin film.

In addition, in the nano-alloy thin film having the same alloy and the same alloy thin film thickness, the nano alloy thin film of Example 12 having the thermal stabilization layer and the oxidation protection layer, which are 10 nm thicker than Example 11 and higher than the Example 11, has near infrared and infrared ray transmittance 50% or more.

As can be seen from the above results, the nano-alloy thin film containing the silver-molybdenum alloy increases the visible light transmittance and the transmittance of the near infrared light and the infrared light, as compared with the nano alloy thin film including the silver thin film, It is found that the nanor alloy thin film containing molybdenum alloy is more suitable as a low - emission material.

Experimental Example  3.

The resistivity and the surface roughness of the thin film of Example 10 after annealing in the atmosphere of argon (Ar) at 150 ° C., 200 ° C., 300 ° C., 350 ° C., 400 ° C. or 500 ° C. for 3 minutes RMS) were evaluated.

The resistance change was performed in the same manner as in Experimental Example 1, and the surface roughness was performed with an atomic force microscope (manufactured by Park System Co., Ltd., Korea). The evaluated resistance change and the surface roughness of the thin film are shown in Fig.

As shown in FIG. 6, the nanocrystalline thin film of Example 10 showed a stable tendency without remarkable change of resistance up to 350 ° C.

In addition, the surface roughness of the thin film was not greatly changed in the nano-alloy thin film of Example 10, and it was confirmed that the structure of the nano-alloy thin film of the present invention was in a very stable state.

As can be seen from the above results, it was confirmed that the nanocrystalline thin film of the present invention is more suitable as a low spinel material because the thermal stability of the thin film of the present invention is improved more than that of the nanolayer thin film containing the thin film.

Example  5.

The nanocrystalline thin film prepared in Example 12 was heat-treated at 100 ° C, 200 ° C, 300 ° C, 400 ° C, 500 ° C or 600 ° C for 3 minutes, and the transmittance of visible light, near infrared ray and infrared ray was measured in the same manner as in Experimental Example 2 Respectively. The measured transmittance is shown in FIG.

As can be seen from Fig. 7, the nano-alloy thin film of Example 12 exhibited no remarkable change in visible light (wavelength, 550 nm) and infrared (wavelength, 2000 nm) at 100 to 600 ° C, Respectively.

Also, considering that the heat treatment conditions at 600 ° C for 3 minutes are the curing heat treatment temperature (post-treatment temperature, tempering temperature) of the low-emission glass, it can be confirmed that the nano-alloy thin film of the present invention has a thermally stable structure.

As can be seen from the above Examples, Comparative Examples and Experimental Examples, the nanocrystalline thin film of the present invention has lower thermal stability, higher transmittance of visible light, lower transmittance of near infrared rays and infrared rays, Which is more suitable as a material for a transparent electrode of an electric electrode film or a display.

Claims (11)

Board;
An alloy thin film layer formed on at least one side of the substrate; And
And a thermal stabilization layer formed between the substrate and the alloy thin film layer,
Wherein the alloy thin film layer comprises a silver (Ag) -molybdenum (Mo) alloy, and the thermally stabilizing layer comprises titanium nitride (TiN). The nanoclay thin film according to claim 1, wherein the alloy thin film layer has an average thickness of 1 to 100 nm. delete The nanostructured thin film according to claim 1, wherein the thermally stabilized layer has an average thickness of 1 to 20 nm. The method according to claim 1, further comprising an oxidation protection layer on the other side of the alloy thin film layer stacked with the thermal stabilization layer, wherein the oxidation protection layer is made of titanium nitride (TiN); Or titanium nitride (TiN) and titanium oxide nitride (TiON). The nanoclay thin film according to claim 5, further comprising a surface protection layer on the other surface of the oxidation protection layer in which the alloy thin film layer is laminated, and the surface protection layer includes titanium oxide nitride (TiON). The method according to any one of claims 1, 2, and 4 to 6, wherein the silver-molybdenum alloy comprises 0.5 to 5.0 atomic percent molybdenum Alloy thin film. The method according to any one of claims 1, 2, and 4 to 6, wherein the nanocrystalline thin film is annealed in an argon (Ar) gas atmosphere at 350 ° C. and then subjected to a four-point probe method Wherein the measured resistance is 5 to 40 占 占-m. A first step of pretreating the substrate;
A second step of laminating a thermally stabilized layer containing titanium nitride (TiN) on one surface of the pretreated substrate; And
A third step of laminating an alloy thin film layer including a silver (Ag) -molybdenum (Mo) alloy on the other surface of the thermally stabilized layer stacked on the substrate to produce a nanoclay thin film;
Wherein the nanocrystalline thin film is formed on the surface of the substrate. delete The method of claim 9, further comprising the steps of: (4) stacking an oxidation protection layer on the other surface of the alloy thin film layer on which the substrate and the thermal stabilization layer are laminated after the third step; Further comprising:
Wherein the oxidation protection layer comprises at least one selected from the group consisting of titanium nitride (TiN) and titanium oxide nitride (TiON).

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