KR101491929B1 - Rf rectifying circuit - Google Patents
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- KR101491929B1 KR101491929B1 KR20130106350A KR20130106350A KR101491929B1 KR 101491929 B1 KR101491929 B1 KR 101491929B1 KR 20130106350 A KR20130106350 A KR 20130106350A KR 20130106350 A KR20130106350 A KR 20130106350A KR 101491929 B1 KR101491929 B1 KR 101491929B1
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Abstract
Description
The present invention relates to an RF (radio frequency) rectifier circuit, and more particularly, to an AC-DC converter or a half-wave rectifier used in an RF energy harvesting process.
Recently, low power non-power semiconductor design such as energy harvesting is a big issue, and the efficiency of energy harvesting is greatly increased due to the development of various device technologies that convert energy such as light, vibration and heat into electric energy . Energy harvesting devices are used in various applications.
In an environment where it is not possible to supply electric power by wire, or when battery replacement is difficult, the supply of energy using an RF signal is called RF energy harvesting. Since the RF signal received through the antenna is an AC voltage, a DC-AC converter (rectifier) is required to convert the RF signal to a DC voltage required by most electronic components.
In order to efficiently transfer the harvested energy to the device and to be used in a semiconductor or the like, miniaturization of the rectifier is required.
Also, since the energy hubbed is very low, the rectifier must be designed to be highly efficient. In addition, the additional circuit for controlling the rectifier should be simple in design, and should not require a separate external auxiliary battery.
The RF rectifier includes a coupling capacitor for AC coupling the input signal, a coupling capacitor coupled to the coupling capacitor and the output of the RF rectifier, for rectifying the input signal, A second rectifying unit connected to the first rectifying unit, the coupling capacitor, and the ground terminal, for rectifying the input signal, a load capacitor connected to an output terminal of the RF rectifier, and a second rectifying unit connected between the first rectifying unit and the second rectifying unit, There is provided an RF rectifier comprising at least one off transistor that offsets at least one threshold voltage value.
In one embodiment, the first rectification part or the second rectification part includes a rectification transistor for rectifying an AC input signal in a DC form, an internal capacitor for connecting a gate and a drain of the rectification transistor, and an internal capacitor connected in parallel with the internal capacitor And may include an internal transistor.
In one embodiment, the drain terminal of the rectification transistor of the first rectification section is connected to one end of the internal capacitor of the first rectification section and the source terminal of the internal transistor of the first rectification section, and the gate of the rectification transistor of the first rectification section The stage may be connected to the other end of the internal capacitor of the first rectification section and the gate and drain stages of the internal transistors of the first rectification section.
In one embodiment, the gate end of the rectification transistor of the second rectification part is connected to one end of the internal capacitor of the second rectification part and the gate end and the drain end of the internal transistor of the second rectification part, The source terminal of the transistor may be connected to the other end of the inner capacitor of the second rectification part and the source terminal of the inner transistor of the second rectification part.
In one embodiment, the rectification transistor and the inner transistor of the first rectification section are PMOS (P-channel metal oxide semiconductor), and the rectification transistor and the inner transistor of the second rectification section are NMOS (N-channel metal oxide semiconductor) have.
In one embodiment, the internal transistor may generate a first voltage to cancel the threshold voltage of the rectifying transistor.
In one embodiment, the internal capacitor may cancel the threshold voltage of the rectification transistor by applying the first voltage generated in the internal transistor.
In one embodiment, the apparatus may further include a feedback capacitor that shortens the charging time of the internal capacitor.
In one embodiment, the feedback capacitor is connected in parallel with the first rectifying part, and may connect the second rectifying part and the output terminal.
In one embodiment, the at least one off transistor may be a PMOS.
In one embodiment, the gate terminal of the at least one off transistor may be coupled to the output terminal.
Figure 1 shows a block diagram of an RF rectifier in accordance with one embodiment.
2 shows a block diagram of an RF rectifier including a feedback capacitor according to one embodiment.
3 shows a circuit diagram of a simple form of an RF rectifier according to a comparative example.
4 is a circuit diagram of an RF rectifier to which a threshold voltage cancellation technique according to a comparative example is applied.
5 is a circuit diagram of an RF rectifier to which a threshold voltage cancellation technique is applied except for an external battery according to a comparative example.
6 shows a circuit diagram of an RF rectifier according to one embodiment.
7 shows a circuit diagram of an RF rectifier in which the off-transistor is a PMOS, according to an embodiment.
Hereinafter, some embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. Like reference symbols in the drawings denote like elements.
FIG. 1 illustrates a block diagram 100 of an RF rectifier in accordance with one embodiment.
According to one embodiment, the RF rectifier includes a coupling capacitor Cc for AC coupling an input signal, a first rectifying
According to one embodiment, the
RF rectifiers used for energy harvesting receive low power. When the conversion efficiency due to the rectification transistor is reduced as described above, the size of the substantially available rectified power may be a trace amount. Therefore, it is required to develop an RF rectifier that cancels the threshold voltage effect that reduces the efficiency of the rectifier.
According to an embodiment, the
For example, in the
The gate end of the rectification transistor of the
For example, in the
The source terminal of the rectification transistor of the
Further, the rectification transistor and the inner transistor of the first rectification part may be implemented by a PMOS (P-channel metal oxide semiconductor), and the rectification transistor and the inner transistor of the second rectification part may be implemented by an N-channel metal oxide semiconductor have. The circuit configuration of the first rectifying
The inner transistor may be designed to produce a first voltage that is a reverse voltage of the rectifying transistor threshold voltage when the current flows. The first voltage generated by the internal transistor can be used for the threshold voltage drop of the rectification transistor. For example, a first voltage generated by an internal transistor may be applied to an internal capacitor. The internal capacitor can be connected to the rectification transistor, and the threshold voltage of the rectification transistor can be lowered by the first voltage applied to the internal capacitor.
As described above, the first voltage formed across the internal capacitor connected to the rectification transistor can offset the threshold voltage of the rectification transistor. However, in this case, the internal transistor must receive the current for generating the first voltage.
However, in general, a resistor may be connected for current conduction, a current may be conducted to the resistor, and power loss may occur.
In order to reduce the power loss, the current flowing through the resistor must be reduced, and a resistor having a relatively large resistance value may be employed. However, if the resistance value becomes larger, there arises a problem that the area of the RF rectifier as a whole increases.
Therefore, in order to reduce the magnitude of the current flowing to reduce the power consumption, the off-state transistor may be replaced with a resistor having a relatively large resistance value. Even if the transistor is turned off, a minute leakage current flows. The leakage current may flow to the internal transistor, and the internal transistor may generate the first voltage using the leakage current.
The threshold voltage of the rectifying transistor can be canceled through the transistor turned off in this manner, and the power consumption can be reduced because only a minute leakage current flows in the transistor that is turned off. In addition, the mounting area may be reduced by replacing a resistor having a relatively large resistance value with a transistor.
Since only a small amount of leakage current flows through the first rectifying
As a result, the startup time is increased as the voltage applied across the internal capacitor becomes longer. As the start-up time increases, the time for achieving the desired rectification efficiency becomes longer, so that the efficiency of the RF rectifier as a whole can be reduced.
Therefore, a feedback capacitor may be further included in the RF rectifier to improve the start-up time, and the effect of adding the feedback capacitor will be described later with reference to FIG.
FIG. 2 illustrates a block diagram 200 of a rectifier including a feedback capacitor according to one embodiment.
According to one embodiment, the RF rectifier includes a coupling capacitor Cc for AC coupling an input signal, a
The RF rectifier in FIG. 2 differs from the RF rectifier in FIG. 1 in that it further includes a feedback capacitor C S. The feedback capacitor C S can prevent an increase in start-up time caused by using the transistor turned off as described in Fig.
The capacitor has characteristics that do not permit abrupt changes in the voltage across both ends. Accordingly, the feedback capacitor C S is connected in parallel with the
Specifically, in FIG. 1, a leakage current generated through the off-transistor forms a voltage across both ends of the internal capacitor, so that a time for forming a voltage across both ends of the internal capacitor is increased, resulting in an increase in start-up time do.
2, a feedback capacitor C S is connected to the
As a result, it is possible to reduce the time taken to form the voltage across the internal capacitor by forming both ends of the internal capacitor through the feedback capacitor (C S ) as well as the leakage current caused through the off transistor An effect that the start-up time is reduced may occur.
Hereinafter, the characteristics of the RF rectifier according to the embodiment of the present invention can be clarified by describing the problems of the RF rectifier according to the comparative examples.
3 shows a circuit diagram of a simple form of an RF rectifier according to a comparative example.
According to one comparative example, the RF rectifier of the simple type includes two transistors M1 and M2 for performing rectification, a capacitor Cc for ac-coupling, and a load capacitor C L for holding the DC component of the output voltage ).
However, as shown in FIG. 3, a voltage drop occurs in the two transistors serving as rectification. The voltage drop due to the rectifying transistor is a major factor in reducing the rectifying efficiency of the rectifier. This voltage drop is caused by the threshold voltage of the rectifying transistor.
Therefore, a threshold voltage cancellation technique is required to minimize or eliminate the effect of the threshold voltage. Hereinafter, comparative examples of RF rectifiers to which the threshold voltage cancellation technique is applied will be described.
4 is a circuit diagram of a half-wave rectifier to which a threshold voltage cancellation technique according to a comparative example is applied.
According to one comparative example, two capacitors (C b ) and an external battery (V bth ) are connected to each rectifying transistor to cancel the threshold voltage drop of the two rectifying transistors (M 1, M 2) that perform the rectification of the RF rectifier .
However, if the external battery (V bth ) is connected, the area of the circuit becomes larger, and an additional switch is required to sequentially transfer the voltage of the external battery (V bth ) to each capacitor (C b ). Further, a complicated additional circuit for controlling this switch is required, which may cause a problem of increased complexity in terms of overall circuit layout.
In addition, additional parasitic capacitor components are generated in this process, which adversely affects the rectification efficiency improvement. The parasitic capacitor component occurs between the node between the capacitor (Cc) for the AC-coupling and the transistor (M1) and the ground. In addition, additional switches wasted power to charge or discharge parasitic capacitors on the node.
Therefore, in order to solve such a problem, an RF rectifier applied with a threshold voltage canceling method except an external battery will be described below.
FIG. 5 is a circuit diagram of a half-wave rectifier to which a threshold voltage canceling technique is applied except for an external battery according to a comparative example.
According to one comparative example, each rectifying transistor and internal capacitors C bp and C bn and internal transistors MP B and C bn are connected in series to cancel the threshold voltage drop of the two rectifying transistors M 1 and M 2 performing the rectification of the RF rectifier, MN B ) in parallel. And connects the resistor R b to each of the internal transistors MP B and MN B , the internal capacitors C bp and C bn and the rectification transistors M 1 and M 2.
Unlike the RF rectifier in FIG. 4, the RF rectifier according to the comparative example in FIG. 5 does not cancel the threshold voltage using an external battery. The internal capacitors C bp and C bn and the internal transistors MP B and MN B are used to cancel the threshold voltage without using an external battery.
The internal transistors MP B and MN B may be intentionally designed to produce a first voltage that is the reverse voltage of the rectifying transistor threshold voltage. In addition, the generated first voltage may be applied to the rectifying transistor so that the threshold voltage may be canceled. If the current is caused to flow through the inner transistor (MP B, MN B), and that in a voltage drop occurs also inside the transistor (MP B, MN B), the voltage drop can be designed such that the reverse voltage of the rectifier transistors.
Reverse voltage of the first voltage of the internal transistor (MP B, MN B) is to be formed at both ends of the inner transistor (MP B, MN B) in parallel with the internal capacitor (C bp, C bn) connected, Because of this, the threshold voltage A canceling effect is generated.
Such an RF rectifier can be a simple configuration that does not require an external battery and requires no additional switch-like configuration because only one capacitor is needed to offset the threshold voltage effect of each rectifying transistor.
However, the since the inner transistor (MP B, MN B) is the resistance being connected to the (R b), the inner transistor current to the ground terminal at the output terminal via (MP B, MN B) to flow, the resistance (R b) May result in power loss. The power loss caused by the current passing through the resistor R b may adversely affect the rectifying efficiency of the rectifier. The current flowing through the resistor R b and the internal transistors MP B and MN B is a current to be transferred to the load through the output terminal originally, thereby causing a reduction in the rectification efficiency of the rectifier.
Therefore, it is necessary to minimize the power loss due to the resistor R b . In order to minimize power loss caused by the resistance (R b) and to reduce the current flowing through the resistor (R b). In order is constant a resistance (R b) the voltage across both ends is obtained by subtracting the voltage drop due to the internal transistor (MP B, MN B) from the output voltage value, reducing the current flowing through the resistor (R b) resistance (R b ) Should be increased.
However, increasing the size of the resistor R b leads to an increase in the area of the RF rectifier, resulting in cost loss in the manufacturing process of the RF rectifier and the like, have.
Also, if the current is reduced by increasing the size of the resistor R b , the current flowing through the internal capacitors C bp and C bn also decreases. When the current flowing through the internal capacitors C bp and C bn decreases , the time required to form the voltage across the internal capacitors C bp and C bn becomes longer, which results in an increase in the start-up time do.
Hereinafter, a circuit diagram according to an embodiment of the present invention for improving the disadvantages of the RF rectifier as described above will be described.
6 shows a circuit diagram of a rectifier according to one embodiment.
According to one embodiment, the RF rectifier includes a rectifier transistor and internal capacitors C bp, C bn and internal transistors MP B , C bn to cancel the threshold voltage drop of the two rectifying transistors M 1 , MN B may be connected in parallel, and an off transistor may be connected to each of the internal transistors MP B and MN B. A feedback capacitor can also be connected in parallel with the internal transistor MP B to connect the internal transistor MN B and the output of the RF rectifier to reduce start-up time.
In comparison with the RF rectifier according to the comparative example described in FIG. 5, instead of adopting a method of increasing the size of the resistor in order to reduce the current flowing through the resistor, an off transistor can be used. All devices use a point where the leakage current flows, so that the transistor that is turned off can be placed instead of the resistor so that only minute leakage current flows.
Designed such that by using the off-transistor inside the transistor a first voltage a voltage drop of the reverse voltage of the rectifier transistors (MP B, MN B) interior transistors (MP B, MN B) by flowing only a leakage current in as described above, can do.
As a result, the first voltage is formed at both ends of the internal capacitors C bp and C bn connected in parallel with the internal transistors MP B and MN B , as shown in FIG. 5, thereby generating a threshold voltage canceling effect .
The connection state of the concrete circuit may be such that the drain end of the rectification transistor MP is connected to one end of the internal capacitor C bp, and the source end of the internal transistor MP B.
The gate terminal of the rectification transistor M1 may be connected to the other terminal of the internal capacitor C bp and the gate terminal and the drain terminal of the internal transistor MP B.
Further, the gate terminal and the drain may be connected to one end of and inside the transistor (MN B) of the gate terminal an internal capacitor (C bn) of the rectification transistor (M2). The other end and an inner transistor of the rectification transistor (M2) is an internal capacitor (C bn) the source terminal of the source may be connected to the end (MN B).
Further rectification transistor (M1) and the inner transistor (MP B) may be a PMOS (P-channel metal oxide semiconductor ), other rectification transistor (M2) and the inner transistor (MN B) is a NMOS (N-channel metal oxide semiconductor ) Lt; / RTI >
In order to solve the problem that the rectification efficiency is reduced due to the current flowing through the resistor, which is one of the problems raised in FIG. 5, an off-transistor which replaces the role of a large resistor can be used instead of using a large resistor. If the OFF transistor is used instead of the resistor, the current flowing in the internal transistors MP B and MN B can be reduced. Therefore, the power consumption due to the resistance is not generated, so that the rectifying efficiency can also be improved.
However, even in the case of using the transistor turned off as described above, only a minute leakage current flows, so that the time for forming the voltage across both ends of the internal capacitors C bp and C bn becomes long. The time for forming the voltage across both ends of the internal capacitors C bp and C bn becomes longer, which results in an increase in start-up time.
Therefore, according to an embodiment of the present invention, in order to solve the disadvantage that the startup time as described above is increased, the feedback capacitor is connected in parallel with the internal transistor MP B , and the internal transistor MN B and the RF rectifier You can connect to the output.
Since the capacitor does not allow a rapid change of the voltage across both ends, the voltage at one end (V X ) of the internal capacitor C bn also tends to rise together when the output voltage rises due to this characteristic . This feedback action may cause the threshold voltage cancellation effect to more quickly engage the operation of the rectifier, and the start-up speed of the output voltage may be improved.
As a result, not only the internal capacitors C bp and C bn are charged due to the leakage current but also the feedback operation of the feedback capacitor Cs is added so that the voltage at the both ends of the internal capacitors C bp and C bn is formed Can be accelerated. This increases the speed of the threshold voltage cancellation effect, which can result in faster start-up times.
Thus, to improve the disadvantages of the RF rectifier shown in FIG. 5, an embodiment of the present invention can provide a more improved RF rectifier by using off transistors instead of resistors and adding feedback capacitors. Hereinafter, a method of implementing a transistor that is turned off will be described in detail.
Figure 7 shows a circuit diagram of a rectifier in which the off-transistor is a PMOS, according to one embodiment.
According to one embodiment, the off transistors (MP B2, MP B3 ) may be a PMOS and the gate end of the PMOS may be connected to the output of the RF rectifier. The PMOS does not operate when a relatively large voltage is applied to the gate terminal. Therefore, if the gate terminal of the PMOS is connected to the output terminal of the RF rectifier, the output terminal of the RF rectifier does not operate because the input AC voltage is rectified and the relatively large voltage is continuously output. Therefore, when the gate terminal of the PMOS is connected to the output terminal of the RF rectifier, it can serve as the off-state transistors MP B2 and MP B3 .
In other embodiments, the transistors MP B2 and MP B3 turned off may be NMOS transistors. If the off transistors MP B2 and MP B3 are implemented as NMOS, the RF rectifier may additionally include a boot-strapping circuit.
The method according to an embodiment of the present invention can be implemented in the form of a program command which can be executed through various computer means and recorded in a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, and the like, alone or in combination. The program instructions recorded on the medium may be those specially designed and constructed for the present invention or may be available to those skilled in the art of computer software. Examples of computer-readable media include magnetic media such as hard disks, floppy disks and magnetic tape; optical media such as CD-ROMs and DVDs; magnetic media such as floppy disks; Magneto-optical media, and hardware devices specifically configured to store and execute program instructions such as ROM, RAM, flash memory, and the like. Examples of program instructions include machine language code such as those produced by a compiler, as well as high-level language code that can be executed by a computer using an interpreter or the like. The hardware devices described above may be configured to operate as one or more software modules to perform the operations of the present invention, and vice versa.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible.
Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.
Claims (11)
A coupling capacitor for AC coupling an input signal;
A first rectifier connected to an output terminal of the coupling capacitor and the RF rectifier, for rectifying the input signal;
A second rectifier connected to the coupling capacitor and the ground terminal, for rectifying the input signal;
A load capacitor connected to an output terminal of the RF rectifier; And
And at least one off transistor for conducting a leakage current to cancel a threshold voltage value of at least one of the first rectifying part and the second rectifying part,
Wherein the first rectifying part or the second rectifying part comprises:
A rectifying transistor for rectifying an AC input signal into a DC form;
An internal capacitor connecting a gate and a drain of the rectifying transistor; And
And an internal transistor connected in parallel with the internal capacitor.
The drain terminal of the rectification transistor of the first rectification section is connected to one end of the internal capacitor of the first rectification section and the source terminal of the internal transistor of the first rectification section,
And the gate end of the rectification transistor of the first rectification part is connected to the other end of the internal capacitor of the first rectification part and the gate end and the drain end of the internal transistor of the first rectification part.
The gate end of the rectification transistor of the second rectification part is connected to one end of the internal capacitor of the second rectification part and the gate end and the drain end of the internal transistor of the second rectification part,
And the source terminal of the rectification transistor of the second rectification part is connected to the other terminal of the internal capacitor of the second rectification part and the source terminal of the internal transistor of the second rectification part.
The rectification transistor and the internal transistor of the first rectification part are PMOS (P-channel metal oxide semiconductor)
Wherein the rectification transistor and the internal transistor of the second rectification section are NMOS (N-channel metal oxide semiconductor).
Wherein the internal transistor generates a first voltage to cancel a threshold voltage of the rectifying transistor.
Wherein the internal capacitor applies the first voltage generated in the internal transistor to cancel the threshold voltage of the rectifying transistor.
Further comprising a feedback capacitor to shorten the charging time of the internal capacitor.
Wherein the feedback capacitor is connected in parallel with the first rectification section and connects the second rectification section and the output terminal.
Wherein the at least one off-transistor is a PMOS.
And the gate end of the at least one off transistor is connected to the output end.
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| KR20130106350A KR101491929B1 (en) | 2013-09-04 | 2013-09-04 | Rf rectifying circuit |
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| KR20130106350A KR101491929B1 (en) | 2013-09-04 | 2013-09-04 | Rf rectifying circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101768385B1 (en) | 2016-08-02 | 2017-08-30 | 전자부품연구원 | Energy Harvesting System applying the Maximum Power Point Tracking Technique with a Charging Time |
| US11210493B2 (en) | 2019-08-23 | 2021-12-28 | Sisoul Co., Ltd. | Fingerprint recognition card |
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| JP2001197749A (en) | 2000-01-13 | 2001-07-19 | Daihen Corp | High-frequency power supply |
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2013
- 2013-09-04 KR KR20130106350A patent/KR101491929B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4755923A (en) | 1986-03-31 | 1988-07-05 | Fukami Patent Office | Regulated high-voltage power supply |
| US6009001A (en) | 1998-03-27 | 1999-12-28 | Toko, Inc. | Self-oscillation-resonance type power supply circuit |
| JP2001197749A (en) | 2000-01-13 | 2001-07-19 | Daihen Corp | High-frequency power supply |
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| IEEE 논문(제목: A Semi-Passive UHD RFID Tag with On-Chip Temperature Sensor), 논문발표 2002년 * |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101768385B1 (en) | 2016-08-02 | 2017-08-30 | 전자부품연구원 | Energy Harvesting System applying the Maximum Power Point Tracking Technique with a Charging Time |
| US11210493B2 (en) | 2019-08-23 | 2021-12-28 | Sisoul Co., Ltd. | Fingerprint recognition card |
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