KR101473345B1 - Evaporation Deposition Apparatus - Google Patents

Abstract

The present invention provides a vapor deposition apparatus. The apparatus includes an inlet provided with a vapor, a baffle disposed around the inlet to divert the vapor, a spherical or elliptical cavity reflecting the vapor, and a plurality of reflected or scattered vapors in the cavity, , A crucible containing an evaporation material therein and supplying the vapor evaporated through the first opening to an inlet of the integrating sphere, and an integrator and a crucible to surround the crucible and the crucible, Wherein the integrating sphere is formed of a conductive material, and the inner surface of the cavity is rough so that the evaporation material is scattered.

Description

[0001] Evaporation Deposition Apparatus [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an evaporation deposition apparatus, and more particularly, to a top-down or side-by-side evaporation deposition apparatus using induction heating and integrating sphere.

In vacuum deposition or vacuum evaporation, a target substance to be deposited is placed in a chamber having a high vacuum, the target substance is heated to evaporate the particles, and the vapor is moved to form a thin film on the substrate.

The evaporation deposition apparatus has a crucible made of a ceramic material and a heating section for heating the crucible. Typically, an evaporation deposition apparatus deposits a thin film on a substrate disposed on an upper surface of a vapor which evaporates upward under gravity against vapor.

However, as the substrate size increases, the bottom-up deposition apparatus has a problem that the substrate is bent. Therefore, a bottom-up deposition apparatus or a lateral-type deposition apparatus is required.

An organic light emitting diode (OLED) constituting an organic light emitting diode display device typically has a positive electrode formed on an upper portion of a transparent substrate, a hole injection layer (HIL) A hole transport layer (HTL), an emissive layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are deposited on the electron transport layer. ) Is formed.

Particularly, when a thin film is deposited by a conventional stuttering method, a cathode or a cathode is damaged by plasma or ultraviolet rays, and the deposition of a conductive material is required by a lateral or top-down evaporation method.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a side-by-side or top-down evaporative deposition apparatus for radial evaporation by a point source using an induction heating and an integrating sphere method overcoming the problems of a conventional bottom- will be.

A vapor deposition apparatus according to an embodiment of the present invention includes an inlet for receiving a vapor, a baffle disposed around the inlet for switching the direction of the vapor, a spherical or elliptical cavity for reflecting the vapor, An outlet for discharging the vapor reflected or scattered a plurality of times in a radial manner by a point source; A crucible containing an evaporation material therein and supplying steam vaporized through the first opening to the inlet of the integrating sphere; And a heating unit arranged to surround the integrating sphere and the crucible to heat the crucible and the integrating sphere, wherein the integrating sphere is formed of a conductive material, and the inner surface of the cavity is rough and the evaporation material is scattered.

In one embodiment of the present invention, the apparatus further includes a dielectric container that surrounds the heating section and has one surface that is opened in the direction of the outlet of the integrating sphere, the heating section including an induction coil for induction heating the crucible and the integrating sphere Lt; / RTI >

In one embodiment of the present invention, the apparatus further comprises a vacuum container including a second opening formed in a side surface, wherein the vapor exiting the outlet of the integrating sphere is capable of depositing a thin film on a substrate disposed opposite the second opening have.

In one embodiment of the present invention, the apparatus further comprises a vacuum container including a second opening formed in the top surface, wherein the vapor exiting the outlet of the integrating sphere deposits a thin film on a substrate disposed opposite the second opening .

In one embodiment of the present invention, the shape of the cavity is an ellipsoid, and the vapor flux discharged from the outlet may increase as the distance from the central axis of the cavity increases.

In one embodiment of the present invention, the integrating sphere and the crucible may be integrated.

In one embodiment of the present invention, the outlet of the integrating sphere has a conical inner space, and the vapor flux of the discharged edge portion is reflected inwardly to the inner surface of the outlet to adjust the discharge angle of the vapor.

In one embodiment of the present invention, the induction coil includes a first induction coil which surrounds the crucible and a second induction coil which surrounds the integrating sphere, and the first AC power source connected to the first induction coil and the second induction coil connected to the first induction coil, And a second AC power source connected to the induction coil.

In one embodiment of the present invention, the integrating sphere is disposed below the crucible, and the crucible has a cylindrical inner wall having a first height; An outer wall having a second height higher than the first height and surrounding the inner wall; A lid covering an upper surface of the outer wall; And a bottom plate in the form of a washer which connects the lower surface between the inner wall and the outer wall. The vapor moving inward of the inner wall may be provided at the inlet formed on the upper surface of the integrating sphere through the first opening formed in the lower surface of the inner wall.

In one embodiment of the present invention, a heat reflecting portion disposed to surround the heating portion; A dielectric container disposed to surround the heat reflecting portion; A washer-shaped pedestal disposed on a lower surface of the exit of the integrating sphere; And a case disposed to surround the dielectric container.

A vapor deposition apparatus according to an embodiment of the present invention includes a crucible and / or an evaporation material, which is heated by induction heating to generate vapor, induction-heating an integral sphere provided with the vapor, A thin film can be formed. By replacing the shape of the integral sphere with the integral ellipsoid, the distribution of the steam can be changed to form a thin film of uniform thickness. Accordingly, lateral or top-down evaporation deposition can be performed on the large-area OLED and the solar cell substrate, substrate damage due to radiant heat can be suppressed, clumping due to uneven vapor distribution in the conventional top down evaporation source can be eliminated, It is possible to prevent the outlet (nozzle) from being clogged.

1 is a cross-sectional view illustrating an evaporation deposition apparatus according to an embodiment of the present invention.
2 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.
3 to 7 are sectional views illustrating a vapor deposition apparatus according to another embodiment of the present invention.
8 and 9 are perspective views illustrating a vapor deposition apparatus according to another embodiment of the present invention.

A typical evaporation deposition apparatus has a crucible made of a ceramic material and a heating section for heating the crucible. The evaporation deposition apparatus deposits a thin film on a substrate disposed on the upper surface of the vapor evaporated upward against gravity. The heating unit heats the crucible through heat conduction using a heating wire.

In order to solve the problem of the bottom-up evaporative deposition apparatus, a top-down evaporative deposition apparatus including a reflector for switching the direction of vapor particles on the upper-side evaporation source has been developed. However, the reflector of the top-down evaporative deposition apparatus generates heat loss, and the crucible and the reflector transfer the radiant heat to the substrate, so that the thin film characteristics are changed. In addition, conventional top-down evaporation source technology has a non-uniform vapor distribution as it only creates a passageway that directs the evaporation vapor downward. Therefore, there is a need for a top-down or side-by-side evaporation deposition apparatus capable of minimizing radiant heat and depositing on a large area substrate with a uniform vapor distribution.

In the evaporation deposition method according to an embodiment of the present invention, the crucible and / or the evaporation material are heated by induction heating, the vapor is introduced into the integrating sphere, and the integral sphere is induction heated to form a radial Vapor may be provided to the substrate to form a thin film. Specifically, an induction heating deposition source may be disposed on the upper surface or side surface of the vacuum container, and the substrate may be positioned on the lower surface or the side surface to perform top-down or side-surface deposition.

When the deposition material is a conductive material, only the deposition material can be directly inductively heated without heating the crucible. The deposition material is vaporized and provided to an integrating sphere, the integral sphere is induction heated, the vapor is reflected or scattered several times in the integrating sphere to provide uniform radial steam to the substrate as an integral sphere outlet, The phenomenon can be suppressed. The temperature of the deposition material and the temperature of the integrating sphere may be controlled differently. Accordingly, the properties of the thin film deposited on the substrate can be changed.

When the deposition material is non-conductive, the conductive crucible is heated, and the deposition material stored in the crucible can be indirectly heated. Accordingly, the evaporation material is vaporized and supplied to the integrating sphere, and the integrating sphere is induction-heated, and the integrating sphere can provide the high-energy steam to the substrate while suppressing the accumulation of the steam. Accordingly, the substrate can form a good thin film at a low process temperature without being heated to a high temperature. In addition, the integrating sphere can be replaced by an integral ellipsoid, and the outlet can be used as a point source to form a more uniform vapor distribution in a wide area by forming more vapor distribution from the center to both edges. In addition, the outlet of the integrating sphere may be a conical shape, and the discharge angle of the vapor may be adjusted by reflecting the vapor of the discharged edge portion inward. A lateral or top-down device can deposit a uniform thin film on a large area substrate without distortion.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are being provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. In the drawings, the components have been exaggerated for clarity. Like numbers refer to like elements throughout the specification.

1 is a cross-sectional view illustrating an evaporation deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the evaporation deposition apparatus 110 includes an integrating sphere 116, a crucible 112, and a dielectric vessel 118, and induction coils 117a and 117b.

The integrating sphere 116 includes an inlet 116a for receiving steam, a baffle 116d disposed around the inlet 116a for switching the direction of the steam, a spherical or elliptical keitty 116c, and an outlet 116b for discharging the vapor reflected from the cavity 116c. The integrating sphere 116 is formed of a conductive material. The integrating sphere 116 is heated by an induction coil. The integrating sphere 116 includes a spherical or elliptical cavity 116c therein and an induced electric field or an induced current is formed in a direction rotating along the central axis (z axis) of the integrating sphere 116. [ The frequency of the induced electric field may be from several tens of kilohertz (kHz) to several megahertz (Mhz). Accordingly, an induction electric field may be formed in the integrating sphere 116. The induction field can be induction heated. The induction heating can reduce unnecessary heat loss by the direct heating method as compared with the conventional heating by the hot wire. Thus, the integrating sphere can be heated to a uniform first temperature.

The outer shape of the integrating sphere 116 may be a cylindrical shape or a spherical shape formed to have a constant thickness. The integrating sphere 116 may be symmetrically cut to provide the baffle 116d therein. The cut plane is preferably an x-y plane, but may be an x-z plane. An elliptical or spherical cavity 116c is disposed in the integrating sphere 116 and an inlet 116a is disposed on the upper surface of the cavity 116c. The outlet 116b may be disposed.

The baffle 116d may be disposed so as to block the inlet 116a of the integrating sphere 116 with a predetermined gap. The baffle 116d can prevent the steam provided at the inlet 116a from escaping directly to the outlet 116b. The baffle 116d may be formed of a conductive material and may be in the form of a disc, and the center of the baffle 116d may coincide with the center of the inlet. Accordingly, the induction electric field can induction-heat the baffle 116d. The steam may enter the baffle 116d, be reflected or scattered, and be provided on the inner surface of the cavity 116c. The vapor may exit the outlet with a constant velocity and radial distribution through reflection and scattering within the cavity 116c. This ensures process stability and reproducibility. The angular distribution of the vapor flux exiting the outlet 116b may depend on the structure of the cavity 116c. The surface of the cavity 116c can be roughened.

Meanwhile, the first temperature of the integrating sphere 116 may be different from the second temperature of the crucible 112. Specifically, the first temperature of the integrating sphere 116 may be higher than the second temperature of the crucible 112. Accordingly, the temperature of the steam in the integrating sphere 116 may be higher than the temperature of the steam in the crucible 112. Accordingly, a vapor having a high energy can be supplied to the substrate (not shown) through the outlet 116b. Thus, the substrate can form a thin film of good quality without being heated to a high temperature.

The steam may be effused from the outlet 116b of the integrating sphere 116. [ The vapor passing through the outlet of the integrating sphere 116 can form a uniform thin film on the substrate.

The crucible 112 contains the evaporation material 114 therein and provides the vapor evaporated through the opening 111 to the inlet 116a of the integrating sphere 116. [ The crucible 112 includes a cylindrical inner wall 112b having a first height, an outer wall 112a having a second height higher than the first height and surrounding the inner wall, a lid 112c covering the upper surface of the outer wall 112a, And a bottom plate 112c in the form of a washer which connects the lower surface between the inner wall 112b and the outer wall 112a. The inside of the inner wall 112b is connected to the opening 111 formed in the lower surface. The evaporation material 114 and / or the crucible 112 are induction-heated by the induction coils 117a and 117b, and the evaporation material 114 is heated by the induction coils 117a and 117b, The material 114 is evaporated. The steam moves to the inside of the inner wall 112b and moves to the inlet 116a of the integrating sphere 116 through the opening 111. [ When the lid 112d is removed, the evaporation material 114 can be replenished.

When the evaporation material 114 is a conductive material, for example, when the evaporation material 114 is aluminum, the aluminum powder may be contained in the crucible 112. The crucible 112 may be a conductive material having a high melting point. For example, the crucible 112 may be graphite, stainless steel, nickel, molybdenum, titanium, or tungsten.

The induction coils 117a and 117b may be separated into a first induction coil 117a and a second induction coil 117b. The first induction coil 117a may induction-heat the crucible 112 and / or the evaporation material 114 to melt and vaporize the evaporation material 114. [ The vaporized vapor may be provided to the integrating sphere 116 through the opening 111. [

When the evaporation material 114 is non-conductive, for example, when the evaporation material is an organic material, the organic material may be contained in the crucible 112. The crucible 112 is formed of a conductive material, and the first induction coil 117a may induction-heat the crucible to vaporize or sublimate the evaporation material. Vapor may be provided to the integrating sphere 116 through the opening 111.

The dielectric container 118 has one surface that surrounds the crucible 112 and the integrating sphere 116 and opens toward the outlet 116 b of the integrating sphere 116. The material of the dielectric container 118 may be quartz, alumina, or ceramic. The dielectric vessel 118 may be in the form of a cylinder having an open side. The dielectric vessel 118 has a lid 118a which can be coupled to the dielectric vessel 118 while maintaining a vacuum. A ring-shaped latching protrusion 113 may be disposed on the inner side of the opened surface of the dielectric container 118. And the integrating sill 116 may be disposed on the latching jaw 113. [ The dielectric container 118 may be coupled through an opening 104 formed in the upper surface of the vacuum container 102. The dielectric container 118 is disposed to protrude to the outside of the vacuum container 102 so that the heat emitted from the crucible 112 and the integrating sphere 116 can be prevented from being transferred to the substrate.

The induction coils 117a and 117b may be disposed outside the dielectric container 118 to induction-heat the crucible 112 and the integrating sphere 116. [ The induction coils 117a and 117b may include a first induction coil 117a surrounding the crucible 112 and a second induction coil 117b surrounding the integrating sphere 116. [ The first induction coil 117a and the second induction coil 117b may be in the form of a solenoid coil.

The first induction coil 117a may be connected to the first AC power source 119a and the second induction coil 117b may be connected to the second AC power source 119b. The induction coils 117a and 117b are formed of copper pipes, and the refrigerant can flow into the induction coils 117a and 117b. Since the crucible 112 and the integrating sphere 116 are protruded from the vacuum container 102, the radiation heat radiated by the crucible 112 and the integrating sphere 116 is transmitted to the substrate at a minimum do. In addition, since the crucible 112 and the integrator 116 are heated by induction, damage to the substrate due to radiant heat is minimized. Further, the temperature of the integrating sphere 116 and the temperature of the crucible 112 may be maintained different from each other, so that the deposition rate and the thin film characteristics of the substrate can be controlled.

2 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 2, the evaporation deposition apparatus 110a includes an integrating sphere 116, a crucible 112, and a dielectric vessel 118, and induction coils 117a and 117b.

The cavity 116c of the integrating sphere 116 may be elliptical and the radius of the major axis (x axis) may be 1.5 to 3 times larger than the radius of the minor axis (z axis). Thus, the angular distribution of the steam exiting the outlet can be adjusted. Thus, the process uniformity of the substrate can be improved.

3 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 3, the evaporation deposition apparatus 110b includes an integrating sphere 116, a crucible 112, a dielectric vessel 118, and induction coils 117a and 117b. The evaporation deposition apparatus 110b provides a submerged device.

The outlet 116c of the integrating sphere may have a conical shape. Accordingly, the edge steam escaping from the outlet may be reflected from the conical side wall to change the angular distribution. Accordingly, the discharge angle of the steam can be adjusted.

4 is a cross-sectional view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 4, the evaporation deposition apparatus 210 includes an integrating sphere 116, a crucible 212, a dielectric vessel 118, and induction coils 117a and 117b. The evaporation deposition apparatus 210 provides a side-by-side or side-by-side apparatus.

The top-down device allows vapor to be deposited on the top surface of the vacuum vessel such that the deposited material falls on the substrate and acts as a contaminant. On the contrary, the lateral device is resistant to contamination.

On the side surface of the vacuum container 102, an opening 104 is formed. A dielectric container 118 is mounted in the opening 104. The dielectric container 118 may be in the form of a cylinder having an open side. The dielectric container 118 may include a lid 118a and a ring-shaped latching jaw 113 around an open side. When the lid 118a is removed, the crucible 212 and the integrating sphere 116 can be removed.

The integrating sphere 116 includes an inlet 116a for receiving steam, a baffle 116d disposed around the inlet 116a for switching the direction of the steam, a spherical cavity 116c for reflecting the steam, And an outlet 116b for discharging the vapor reflected from the cavity 116c. The integrating sphere 116 is formed of a conductive material. The integrating sphere 116 may have a cylindrical structure.

The crucible 212 contains evaporation material therein and provides vapor, which is evaporated through the discharge port, to the inlet of the integrating sphere 116. The crucible 212 may have a lid 212d. When the lid 212d is removed, the deposition material 114 can be received. The lid 212d may be disposed in the z-axis direction or in the opposite direction of gravity.

The crucible 212 may have a cylindrical structure with both sides closed. One side of the crucible may include an opening 211 and the opening 211 may be connected to an inlet 116a of the integrating sphere 116. [

The dielectric container 118 has one surface that surrounds the crucible 212 and the integrating sphere 116 and opens toward the outlet 116 b of the integrating sphere 116. The dielectric container 118 may be cylindrical with a lid 118a. The opened one side of the dielectric container 118 is mounted in the opening 104 formed in the side surface of the vacuum container 102.

The induction coils 117a and 117b are disposed outside the dielectric container 118 to induction-heat the crucible 212 and the integrating sphere 116. [ The induction coils 117a and 117b may include a first induction coil 117a surrounding the crucible 212 and a second induction coil 117b surrounding the integrating sphere 216. [ The induction coils 117a and 117b may be in the form of solenoid coils. The first induction coil 117a may be connected to the first AC power source 119a and the second induction coil 117b may be connected to the second AC power source 119b.

5 is a cross-sectional view illustrating a vapor deposition apparatus according to another embodiment of the present invention.

3 and 5, the evaporation deposition apparatus 110c includes an integrating sphere 116, a crucible 112, and a dielectric vessel 118, and an induction coil 117. [ The integrating sphere 116 and the crucible 112 may be integrally formed. In addition, the induction coil 117 may be integrally formed so as to simultaneously heat the integrating sphere 116 and the crucible 112. Accordingly, the AC power source 119 for supplying power to the induction coil may be one.

According to a modified embodiment of the present invention, the evaporation deposition apparatus 110c may be installed inside a vacuum container.

6 is a cross-sectional view illustrating a vapor deposition apparatus according to another embodiment of the present invention.

4 and 6, the evaporation deposition apparatus 210a includes an integrating sphere 116, a crucible 212, and a dielectric vessel 118, and an induction coil 117. The integrating sphere 116 and the crucible 212 may be integrally formed. In addition, the induction coil 117 may be integrally formed so as to simultaneously heat the integrating sphere 116 and the crucible 212. Accordingly, the AC power source 119 for supplying power to the induction coil 117 can be one.

According to a modified embodiment of the present invention, the evaporation deposition apparatus 210a may be installed inside the vacuum container.

7 is a cross-sectional view illustrating a vapor deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 7, the evaporation deposition apparatus 310 includes an integrating sphere 116, a crucible 112, and a heating section 317.

The integrating sphere 116 includes an inlet 116a for receiving steam, a baffle 116d disposed around the inlet 116a for switching the direction of the steam, a spherical or elliptical keitty And an outlet 116b for radially discharging the vapor reflected or scattered plural times in the cavity 116c by a point source. The integrating sphere 116 is formed of a conductive material, and the inner surface of the cavity 116 is rough so that the evaporation material is scattered.

The crucible 112 contains the evaporation material 114 therein and provides the vapor evaporated through the first opening 111 to the inlet 116a of the integrating sphere 116. [

The heating unit 317 includes a heating unit disposed to surround the integrating sphere 116 and the crucible 112 to heat the crucible 112 and the integrating sphere 116. The heating unit 317 may include a heating wire. The power supply 319 may be connected to the heating unit 317 to supply power. The heating unit 317 can operate by DC or AC.

The heat reflecting portion 321 is arranged to surround the heating portion 317. The heat reflecting portion 321 may reflect the radiant heat of the heating portion 317 in the direction of the integrating sphere and the crucible. The heat reflecting portion may be formed of a conductor. The heat reflecting portion may have a lid.

The dielectric container 318 is disposed to surround the heat reflecting portion 321. The dielectric container 318 may perform an insulating function. Thus, heat can be prevented from escaping from the dielectric container. The dielectric container may have a lid.

The case 323 is disposed so as to surround the dielectric container 318. The case 323 may be disposed on the vacuum container 102 to maintain a vacuum. The case 323 may be formed of a conductor. The case may be in the form of a cylinder having a lid.

The receiving portion 313 has a washer shape disposed on the lower surface of the outlet 116c of the integrating sphere 116. [ The receiving portion 313 may be disposed on the second opening portion 103 of the vacuum container 102. The support portion 313 is formed of a dielectric material having excellent heat insulation property and can prevent direct contact between the integrating sphere 116 and the vacuum container 102. The heating part 317 is disposed on the receiving part 313 so that thermal contact between the heating part 317 and the vacuum container 102 can be suppressed.

8 is a perspective view illustrating an evaporation deposition apparatus according to another embodiment of the present invention.

Referring to FIG. 8, the substrate 142 is vertically disposed in the vacuum container 102, and the evaporation source 210 is disposed at a position facing the substrate 142. A mask 143 is positioned between the substrate 142 and the evaporation source 142 and the substrate 142 and the mask 143 are aligned and fixed in close contact with each other in the substrate holder 141. The mask 143 includes a pattern portion in which a pattern corresponding to a thin film to be formed on the substrate 142 is formed.

The evaporation source 210 can move up and down (z axis). The moving units 191 and 192 may include a fixing unit 192 for fixing the evaporation source 210 and a rotating shaft 191 for moving the fixing unit 192 up and down. The rotary shaft 191 can be rotated by a motor. Accordingly, as the rotation shaft 191 rotates, the fixing portion 192 can change the rotational motion to a linear motion.

1 to 6, the evaporation source 210 may include an integrating sphere 116, a crucible 212, and a dielectric vessel 118, and an induction coil 117.

9 is a perspective view illustrating a vapor deposition apparatus according to another embodiment of the present invention.

9, the substrate 142 is horizontally disposed in the vacuum container 102, and the evaporation source 110 is disposed on the upper surface facing the substrate 142. A mask 143 is positioned between the substrate 142 and the evaporation source 110 and the substrate 142 and the mask 143 are aligned and fixed in a state of being closely contacted with each other in the substrate holder 141. The mask 143 includes a pattern portion in which a pattern corresponding to a thin film to be formed on the substrate 142 is formed.

The evaporation source 110 can move in the left and right (x-axis) directions. The moving units 191 and 192 may include a fixing unit 192 for fixing the evaporation source 110 and a rotating shaft 191 for moving the fixing unit 192 to the left and right. The rotary shaft 191 can be rotated by a motor. Accordingly, as the rotation shaft 191 rotates, the fixing portion 192 can change the rotational motion to a linear motion.

1 to 6, the evaporation source 110 may include an integrating sphere 116, a crucible 112, and a dielectric vessel 118, and an induction coil 117. [

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, And all of the various forms of embodiments that can be practiced without departing from the technical spirit.

110: Evaporative evaporation apparatus 116: Integral sphere
112: Crucible 118: Dielectric container
117a, 117b: induction coil 114: evaporation material

Claims (10)

A baffle disposed around the inlet to divert the direction of the vapor, a spherical or elliptical cavity to reflect the vapor, and a plurality of reflections or scattered vapors from the cavity to the clerk An integrating sphere including an outlet for radially discharging by an electric motor;
A crucible containing an evaporation material therein and supplying steam vaporized through the first opening to the inlet of the integrating sphere; And
And a heating unit arranged to surround the integrating sphere and the crucible to heat the crucible and the integrating sphere,
The integrating sphere is formed of a conductive material,
The shape of the cavity is an ellipsoid,
Wherein the vapor flux discharged from the outlet increases as the distance from the center axis of the cavity increases. A baffle disposed around the inlet to divert the direction of the vapor, a spherical or elliptical cavity to reflect the vapor, and a plurality of reflections or scattered vapors from the cavity to the clerk An integrating sphere including an outlet for radially discharging by an electric motor;
A crucible containing an evaporation material therein and supplying steam vaporized through the first opening to the inlet of the integrating sphere; And
And a heating unit arranged to surround the integrating sphere and the crucible to heat the crucible and the integrating sphere,
The integrating sphere is formed of a conductive material,
Wherein the integrating sphere is disposed below the crucible,
The crucible includes:
A cylindrical inner wall having a first height;
An outer wall having a second height higher than the first height and surrounding the inner wall;
A lid covering an upper surface of the outer wall; And
And a bottom plate in the form of a washer which connects the lower surface between the inner wall and the outer wall,
Wherein the vapor moving inwardly of the inner wall is provided at the inlet formed on the upper surface of the integrating sphere through the first opening formed in the lower surface of the inner wall. 3. The method according to claim 1 or 2,
Further comprising a dielectric container that surrounds the heating part and has one surface that is opened in an outlet direction of the integrating sphere,
Wherein the heating unit is an induction coil for induction heating the crucible and the integrating sphere. 3. The method according to claim 1 or 2,
Further comprising a vacuum container including a second opening formed in a side surface thereof,
Wherein the vapor exiting the outlet of the integrating sphere deposits a thin film on a substrate disposed opposite the second opening. 3. The method according to claim 1 or 2,
And a second opening formed in the upper surface,
Wherein the vapor exiting the outlet of the integrating sphere deposits a thin film on a substrate disposed opposite the second opening. 3. The method according to claim 1 or 2,
Wherein the integrating sphere and the crucible are integrated. 3. The method according to claim 1 or 2,
The outlet of the integrating sphere has a conical internal space,
And the vapor flux at the discharged edge portion is reflected inwardly to the inner surface of the outlet to adjust the discharge angle of the vapor. The method of claim 3,
Wherein the induction coil includes a first induction coil surrounding the crucible and a second induction coil surrounding the integrating sphere,
Further comprising a first AC power source connected to the first induction coil and a second AC power source connected to the second induction coil. 3. The method according to claim 1 or 2,
A heat reflecting portion disposed to surround the heating portion;
A dielectric container disposed to surround the heat reflecting portion;
A washer-shaped pedestal disposed on a lower surface of the exit of the integrating sphere; And
And a case disposed to surround the dielectric container. delete

Images