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KR101476603B1 - Forming method of ceramic coating layer increased plasma resistance and ceramic coating layer thereof - Google Patents

Forming method of ceramic coating layer increased plasma resistance and ceramic coating layer thereof Download PDF

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Publication number
KR101476603B1
KR101476603B1 KR1020140006147A KR20140006147A KR101476603B1 KR 101476603 B1 KR101476603 B1 KR 101476603B1 KR 1020140006147 A KR1020140006147 A KR 1020140006147A KR 20140006147 A KR20140006147 A KR 20140006147A KR 101476603 B1 KR101476603 B1 KR 101476603B1
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South Korea
Prior art keywords
ceramic
particle size
powder
coating
particle
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KR1020140006147A
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Korean (ko)
Inventor
이문기
김병기
박재혁
김대근
이명노
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아이원스 주식회사
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Priority to KR1020140006147A priority Critical patent/KR101476603B1/en
Priority to US15/112,079 priority patent/US10590542B2/en
Priority to CN201480075369.7A priority patent/CN106029949B/en
Priority to PCT/KR2014/011795 priority patent/WO2015108276A1/en
Priority to JP2015557964A priority patent/JP6058822B2/en
Priority to PCT/KR2014/011796 priority patent/WO2015108277A1/en
Priority to JP2015557963A priority patent/JP6058821B2/en
Priority to US15/112,086 priority patent/US10982331B2/en
Priority to CN201480075571.XA priority patent/CN106029948B/en
Application granted granted Critical
Publication of KR101476603B1 publication Critical patent/KR101476603B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

An embodiment of the present invention relates to a method of forming a ceramic coating having improved plasma resistance and a ceramic coating therefrom, and a technical object of the present invention is to provide a method of forming a ceramic coating having improved plasma resistance and a ceramic coating therefor.
To this end, the present invention provides a method of manufacturing a ceramic powder, comprising: supplying a plurality of ceramic powders having a first powder particle size range from a powder supply unit and transferring the ceramic powder using a transfer gas; And colliding and crushing the transferred ceramic powder to a substrate in a process chamber at a rate of 100 to 500 m / s to form a plurality of first ceramic particles having a coating first particle size range, And forming a ceramic coating mixed with a plurality of second ceramic particles having a second particle size range, wherein the first ceramic particle has a coating first particle size range of 1 nm to 900 nm, and the second ceramic particle And a second coating film thickness range of 900 nm to 10 탆, and a ceramic coating therefor.

Description

[0001] The present invention relates to a method of forming a ceramic coating having improved plasma resistance,

One embodiment of the present invention relates to a method of forming a ceramic coating having improved plasma resistance and a ceramic coating therefor.

Cl- or F-based highly corrosive gases are used for very high etching rates and fine line widths in semiconductor and / or display fabrication processes. Manufacturing process equipment used in such harsh environments is deposited with yttrium-based ceramic oxide, which has excellent plasma resistance on the surface of metal workpieces, in order to increase the operation advantage and extend the service life.

The yttrium-based oxide reacts with the corrosive gas to form an insoluble layer of yttrium fluoride (YF) on the surface of the ceramic coating. Due to the high binding force of the YF layer formed on the entire surface, yttrium oxide Is suppressed.

Korean Registered Patent No. 10-1249951 (March 31, 2013)

One embodiment of the present invention provides a method of forming a ceramic coating having improved plasma resistance and a ceramic coating therefor.

An embodiment of the present invention provides a method of forming a ceramic coating having a relatively low porosity (porosity), no surface micro cracking, and easy control of ceramic powder, and a ceramic coating therefor.

An embodiment of the present invention provides a method of forming a ceramic coating film having improved hardness, bonding strength, and withstand voltage characteristics, and a ceramic coating therefor.

A method of forming a ceramic coating having improved plasma resistance according to an embodiment of the present invention includes the steps of: receiving a plurality of ceramic powders having a first powder particle size range from a powder supply unit and transferring the ceramic powder using a transfer gas; And colliding and crushing the transferred ceramic powder to a substrate in a process chamber at a rate of 100 to 500 m / s to form a plurality of first ceramic particles having a coating first particle size range, And forming a ceramic coating mixed with a plurality of second ceramic particles having a second particle size range, wherein the first ceramic particle has a coating first particle size range of 1 nm to 900 nm, and the second ceramic particle The coating second particle size range is 900 nm to 10 탆.

The first powder particle size range of the ceramic powder may be between 0.1 μm and 25 μm.

The ceramic powder may further include a second powder particle size range, and the second powder particle size range of the ceramic powder may be from 15 to 50 탆.

The number of the first ceramic particles may be greater than the number of the second ceramic particles.

The step of forming the ceramic coating may be such that the transport gas or the substrate is maintained at a temperature of 0 ° C to 1000 ° C.

The ceramic powder may be a brittle material.

According to an embodiment of the present invention, there is provided a ceramic coating having improved plasma resistance, comprising: a plurality of first ceramic particles having a first particle size range; And a plurality of second ceramic particles having a second particle size range larger than the first particle size range, wherein the first ceramic particles and the second ceramic particles are mixed with the substrate to form a ceramic coating, The porosity of the coating is 0.01% to 1.0%.

The first ceramic particle has a first particle size range of 1 nm to 900 nm and the second ceramic particle has a second particle size range of 900 nm to 10 탆.

The number of the first ceramic particles may be greater than the number of the second ceramic particles.

The first and second ceramic particles may be a brittle material.

The substrate may be a component exposed to a plasma environment. The part may be an internal part of a process chamber for semiconductor or display manufacture. The component may be an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a focus ring, A liner, a shield, a cold pad, a source head, an outer liner, a deposition shiled, an upper liner, an exhaust plate an exhaust plate, an edge ring, and a mask frame.

The first and second ceramic particles may be selected from the group consisting of yttrium-based oxide, aluminum nitride, silicon nitride, titanium nitride, Y 2 O 3 -Al 2 O 3 -based compound, B 4 C, ZrO 2, and Al 2 O 3 Or a mixture of the two.

The cross-sectional area ratio of the first ceramic particle and the second ceramic particle may be 9: 1 to 5: 5.

One embodiment of the present invention provides a method of forming a ceramic coating having improved plasma resistance and a ceramic coating therefor.

An embodiment of the present invention provides a method of forming a ceramic coating having a relatively low porosity (porosity), no surface micro cracking, and easy control of ceramic powder, and a ceramic coating therefor.

An embodiment of the present invention provides a method of forming a ceramic coating film having improved hardness, bonding strength, and withstand voltage characteristics, and a ceramic coating therefor.

1 is a schematic view showing an apparatus for forming a ceramic film having improved plasma resistance according to an embodiment of the present invention.
2 is a flowchart illustrating a method of forming a ceramic film having improved plasma resistance according to an embodiment of the present invention.
3 is a graph showing a particle size distribution of a ceramic powder according to an embodiment of the present invention.
4 is a schematic view showing a cross section of a ceramic coating having improved plasma resistance according to an embodiment of the present invention.
FIG. 5 is a graph showing a particle size distribution of first ceramic particles and second ceramic particles forming a ceramic coating according to an embodiment of the present invention.
6A to 6C are electron microscope sectional photographs of a ceramic coating film formed of Y 2 O 3 having improved plasma resistance according to an embodiment of the present invention.
FIGS. 7A to 7C are electron microscope sectional photographs of a ceramic coating having improved plasma resistance formed of Al 2 O 3 according to an embodiment of the present invention.
8A to 8C are electron microscope sectional photographs of a ceramic coating film having improved plasma resistance formed of a hydroxyapatite [Ca 10 (PO 4 ) 6 (OH) 2 ] according to an embodiment of the present invention.
FIG. 9A shows a surface electron micrograph of a ceramic coating according to the prior art, and FIG. 9B shows an electron microscope photograph of a ceramic coating according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, The present invention is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more faithful and complete, and will fully convey the scope of the invention to those skilled in the art.

In addition, the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used in this specification are taken to specify the presence of stated features, steps, numbers, operations, elements, elements and / Steps, numbers, operations, elements, elements, and / or groups. Also, as used herein, the term "and / or" includes any and all combinations of any of the listed items.

Although the terms first, second, etc. are used herein to describe various particles, layers, members, parts, regions and / or portions, these particles, layers, members, parts, regions and / It should not be limited by. These terms are only used to distinguish one particle, layer, member, part, region or section from another particle, layer, member, part, region or section. Thus, the first ceramic particle, layer, component, region or portion described below may also refer to a second ceramic particle, layer, component, region or portion without departing from the teachings of the present invention.

FIG. 1 is a schematic view showing an apparatus for forming a ceramic film having improved plasma resistance according to an embodiment of the present invention. FIG. 2 is a flowchart showing a method of forming a ceramic film having improved plasma resistance according to an embodiment of the present invention. to be.

1, the ceramic film forming apparatus 200 according to the present invention includes a transfer gas supply unit 210, a powder supply unit 220 for storing and supplying ceramic powder, a powder supply unit 220, A transfer tube 222 for transferring the ceramic powder at a high speed using a transfer gas, a nozzle 232 for coating / laminating or spraying the ceramic powder from the transfer tube 222 on the substrate 231, And a process chamber 230 for forming a ceramic coating layer having a predetermined thickness by causing the ceramic powder of the ceramic powder to collide with and break the surface of the substrate 231.

1 and 2 together, a method of forming a ceramic coating film according to the present invention will be described.

The transfer gas stored in the transfer gas supply unit 210 may be one or a mixture of two or more selected from the group consisting of oxygen, helium, nitrogen, argon, carbon dioxide, hydrogen, and equivalents thereof. It is not limited. The transfer gas is directly supplied from the transfer gas supply unit 210 to the powder supply unit 220 through the pipe 211 and the flow rate and pressure thereof can be controlled by the flow rate regulator 250.

The powder supply part 220 stores and supplies a large amount of ceramic powder, and the ceramic powder may have a particle diameter range of approximately 0.1 탆 to 50 탆. In one example, the ceramic powder has a first particle size range and a first mode and may have normal distribution characteristics.

When the particle size of the ceramic powder is less than about 0.1 탆, it is difficult to store and supply the ceramic powder, and when the powder is sprayed, collided, crushed and / or crushed due to coagulation phenomenon during storage and supply of the ceramic powder, There is a disadvantage in that it is easy to form a green compact in the form of a cluster of particles and it is also difficult to form a large ceramic coating.

In addition, when the particle size of the ceramic powder is larger than about 50 占 퐉, not only is it easy to cause a phenomenon of sandblasting that scrapes the substrate during spraying, collision, crushing and / or pulverization of the ceramic powder, The ceramic coating film structure becomes unstable and the porosity of the inside or the surface of the ceramic coating film becomes large, so that the original characteristics of the material may not be exhibited.

When the particle diameter of the ceramic powder is in the range of approximately 0.1 to 50 탆, a ceramic coating film having a relatively small porosity (porosity), no surface micro cracking, and easy control of the ceramic powder can be obtained. When the particle size of the ceramic powder is in the range of about 0.1 탆 to 50 탆, it is possible to obtain a ceramic coating film having a relatively high rate of lamination of the ceramic coating, translucency, and easy particle size distribution.

Such a ceramic powder may be a brittle material. A brittle material is a material that is well broken and does not stretch.

Brittle material ceramic powder was the yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3 ) And its equivalents, but the present invention is not limited to these materials.

Specifically, the brittle material ceramic powder is selected from oxides of yttria (Y 2 O 3 ), YAG (Y 3 Al 5 O 12 ), rare earths (Y and Sc including Ar and Ar) Al 2 O 3 ), bioglass, silicon (SiO 2 ), hydroxyapatite, titanium dioxide (TiO 2 ), and equivalents thereof. The invention is not limited.

More specifically, the brittle material ceramic powder is hydroxyapatite, calcium phosphate, bio-glass, Pb (Zr, Ti) O 3 (PZT), alumina, titanium dioxide, zirconia (ZrO 2), yttria (Y 2 O 3), Yttria stabilized zirconia, Dy 2 O 3 , Gd 2 O 3 , CeO 2 , Gadolinia doped Ceria (GDC) , magnesia (MgO), barium titanate (BaTiO 3), nickel TKO carbonate (NiMn 2 O 4), potassium sodium niobate (KNaNbO 3), bismuth potassium titanate (BiKTiO 3), bismuth sodium titanate (BiNaTiO 3), CoFe 2 O 4, NiFe 2 O 4, BaFe 2 O 4, NiZnFe 2 O 4, ZnFe 2 O 4, MnxCo 3 -x O 4 ( where, x is a positive real number less than 3), bismuth ferrite (BiFeO 3) , zinc bismuth niobate (Bi 1 .5 Zn 1 Nb 1 .5 O7), lithium aluminum titanium phosphate glass ceramic, Li-La-Zr-O-based oxide Garnet, Li-La-Ti-O based Perovskite oxides, La- Ni-O system Oxide, lithium-cobalt oxide, Li-Mn-O based spinel oxide (lithium manganese oxide), lithium aluminum gallium oxide, tungsten oxide, tin oxide, lanthanum nickel oxide, lanthanum- Wherein the phosphor is at least one selected from the group consisting of strontium-iron-cobalt oxide, silicate-based fluorescent material, SiAlON-based fluorescent material, aluminum nitride, silicon nitride, titanium nitride, AlON, silicon carbide, titanium carbide, tungsten carbide, magnesium boride, titanium boride, Metal carbide mixture, a mixture of ceramic and polymer, a mixture of ceramic and metal, and equivalents thereof. However, the present invention is not limited to these materials.

FIG. 3 is a graph showing the particle size distribution of the ceramic powder according to an embodiment of the present invention, and the characteristics of the ceramic powder will be described in more detail using the graph. 3, the X axis represents the ceramic powder particle diameter (占 퐉) and is represented by a log scale, and the Y axis represents the ratio (%) of the powder particle size (占 퐉) or the powder particle size (占 퐉) .

The particle size analysis of the ceramic powder is performed using laser diffraction technique. An example of the apparatus for measuring the size of the ceramic powder is an analyzer such as Beckman Coulter's LS 13 320.

Specifically, a method of analyzing the particle size (grain size) of a ceramic powder will be described. A ceramic powder is put in a solvent such as water and diluted with a suspension having a concentration of about 10% to prepare a slurry. Then, the ceramic powder is uniformly dispersed in the slurry by using an ultrasonic wave or a rotor. Then, the thus-dispersed ceramic powder in a slurry state is circulated, a laser beam is incident on the ceramic powder in the dispersed slurry state, and the intensity of the laser beam scattered through the ceramic powder is measured to determine the particle size of the ceramic powder . The analytical range of the ceramic powder by this analytical instrument is approximately 0.017 mu m to 2,000 mu m, though slightly different for each model.

As shown in FIG. 3, the ceramic powder may have a first particle size range and a first mode. More specifically, the first particle size range of the ceramic powder may be between approximately 0.1 μm and 25 μm, and the first mode of the ceramic powder may be between approximately 1 μm and 10 μm.

Furthermore, the ceramic powder may further include a second particle size range and a second mode. In this case, the second particle size range of the ceramic powder is approximately 15 탆 to 50 탆, preferably approximately 25 탆 to 50 탆, and the second mode of the ceramic powder is 20 탆 to 40 탆, preferably approximately 30 탆 to 35 Mu m.

Here, for example, the maximum number of the first modes of the ceramic powder may be less than about 5 (or 5%), and the maximum number of the second modes of the ceramic powder may be less than about 0.5 (or 0.5%).

Practically, when the first and second particle size ranges, the first and second modes, and the number (ratio) of the ceramic powder are out of the above range, it is difficult to obtain a ceramic coating having a porosity of 0.01% to 1.0% there is a problem. In addition, when the ceramic powder is out of the above-mentioned range, there is a problem that it is difficult to obtain a ceramic coating having a specific hardness, bonding strength and withstand voltage described below.

For example, when a ceramic coating is formed using only a ceramic powder having a particle size of less than about 0.1 탆, the particle size of the powder itself is small, so that the overall transmittance of the ceramic coating is excellent and the porosity is low. It is relatively slow and there is a problem that the ceramic powder is coagulated and the control of the ceramic powder is difficult.

As another example, when a ceramic coating is formed using a ceramic powder having a particle size larger than about 50 탆, the particle size of the powder itself is large, so that the rate of deposition of the ceramic coating is generally high, but the porosity of the ceramic coating is high. There is a problem that the ceramic coating structure becomes unstable due to micro cracks.

Substantially, in the case of forming a ceramic coating of the intrinsic plasma yttrium oxide to be applied to a semiconductor process by using a ceramic powder having a particle size range larger than about 50 탆, despite the excellent plasma resistance of yttrium oxide, Due to the unstable microstructure generated, the pores between the coarse particles inside the microstructure are large, and the surface area is increased by the pores. Accordingly, the corrosive gas is introduced into the pores to accelerate the plasma corrosion rate, There is a problem that the oxide particles are separated from the ceramic coating and act as contaminant particles.

On the other hand, the ceramic powder may be roughly spherical, which is advantageous for high-speed feeding, but the present invention is not limited to this form, and the ceramic powder may be a layered structure, a needle-shaped structure, or a polygonal structure.

In addition, ceramic powder having one particle size range and one mode, or two particle size ranges and two modes, is exemplified above, but ceramic powder having three or more particle sizes and three or more modes, as required, Can be used in the invention.

Of course, the second and third particle diameters and the second and third modes do not limit the ceramic powder used in the present invention, and the ceramic coating according to the present invention has one mode as described above, And may be formed by a ceramic powder having a size of 0.1 to 50 mu m. At this time, the optimum may be between approximately 1 μm and 10 μm, or more preferably between approximately 4 μm and 10 μm.

Here, the ceramic powder according to the present invention may be formed by the method disclosed in the registered patent No. 10-1075993 (Oct. 17, 2011) by the present applicant, but the present invention is not limited thereto.

The method for forming a ceramic coating film according to the present invention will be described with reference to Figs. 1 and 2 again.

The process chamber 230 maintains a vacuum during the formation of the ceramic coating, to which the vacuum unit 240 can be connected. More specifically, the pressure of the process chamber 230 is approximately 1 pascal to 800 pascal, and the pressure of the ceramic powder conveyed by the rapid delivery pipe 222 may be approximately 500 pascals to 2000 pascals. However, in any case, the pressure of the high-speed transfer pipe 222 must be higher than the pressure of the process chamber 230.

In addition, the internal temperature range of the process chamber 230 is approximately 0 ° C to 30 ° C, so that there is no need for a member to increase or decrease the internal temperature of the process chamber 230 separately. That is, the transport gas and / or the substrate may not be separately heated, but may be maintained at a temperature of 0 ° C to 30 ° C.

However, in some cases, the transport gas and / or the substrate may be heated to a temperature of approximately 300 캜 to 1000 캜, in order to improve the deposition efficiency and denseness of the ceramic coating. That is, the transfer gas in the transfer gas supply unit 210 may be heated by a heater (not shown), or the substrate 231 in the process chamber 230 may be heated by a separate heater (not shown). The stress applied to the ceramic powder at the time of forming the ceramic coating by the heating of the transfer gas and / or the substrate is reduced, so that a ceramic coating having a small porosity and a dense ceramic coating can be obtained. Here, when the transport gas and / or the substrate is higher than the temperature of about 1000 ° C, the ceramic powder is melted to cause a rapid phase transition, thereby increasing the porosity of the ceramic coating and making the internal structure of the ceramic coating unstable. Further, when the transport gas and / or the substrate is lower than the temperature of approximately 300 캜, the stress applied to the ceramic powder may not decrease.

However, this temperature range is not limited in the present invention, and the internal temperature range of the transfer gas, the substrate and / or the process chamber may be adjusted between 0 ° C and 1000 ° C depending on the characteristics of the substrate on which the coating is to be formed.

Meanwhile, as described above, the pressure difference between the process chamber 230 and the high-speed transfer pipe 222 (or the transfer gas supply unit 210 or the powder supply unit 220) may be approximately 1.5 times to 2000 times. If the pressure difference is less than about 1.5 times, high-speed transfer of the ceramic powder may be difficult, and if the pressure difference is greater than about 2000 times, the surface of the substrate may be excessively etched by the ceramic powder.

The ceramic powder from the powder supply unit 220 is injected through the transfer pipe 222 and transferred to the process chamber 230 at a high speed according to the pressure difference between the process chamber 230 and the transfer pipe 222.

In addition, a nozzle 232 connected to the transfer pipe 222 is provided in the process chamber 230 to collide the ceramic powder with the substrate 231 at a speed of approximately 100 to 500 m / s. That is, the ceramic powder through the nozzle 232 is crushed and / or crushed by the kinetic energy obtained during transportation and the collision energy generated at the time of high-speed collision, thereby forming a ceramic coating having a certain thickness on the surface of the base material 231.

Here, the ceramic powder is decomposed into first ceramic grains having a first particle size range and a first mode, and second ceramic particles having a second particle size range and a second mode, These first and second ceramic particles are irregularly mixed with each other on the surface of the substrate to form a ceramic coating having a dense internal structure with a relatively small porosity.

In other words, when the ceramic powder having the first powder particle size range and the first powder particle size and having the normal distribution characteristic is crushed and crushed by colliding with the base material at a rate of about 100 to 500 m / s, the first particle size range of the coating film and the coating film A first coated ceramic particle having a first aspect ratio and a coated second ceramic particle having a coated second particle size range and a coated second aspect ratio, that is, having at least two peaks in the number of particles, Is obtained. At this time, the first ceramic particle has a first particle size range smaller than the second particle size range of the second ceramic particle, and the first mode of the first ceramic particle is smaller than the second mode number of the second ceramic particle, By providing a ceramic coating structure in which sand with small diameters is located between the gravels, a ceramic coating with a very low porosity and a high deposition / coating speed is provided. The structure of such a ceramic coating will be described below.

FIG. 4 is a schematic view showing a cross section of a ceramic coating having improved plasma resistance according to an embodiment of the present invention. FIG. 5 is a cross-sectional view of a first ceramic particle and a second ceramic particle forming a ceramic coating according to an embodiment of the present invention. Fig. 5, the X axis means the particle diameter (nm), and the Y axis means the number (ea) or percentage (%) of the particle diameter (nm). 5, the X-axis is approximately 10,000 nm, but is omitted for convenience of explanation.

Here, the particle size (particle size) of the first and second ceramic particles constituting the ceramic coating was analyzed by a scanning electron microscope (for example, SNE-4500M analyzer). More specifically, the method of analyzing the grain size of the ceramic particles will be described. First, the analytical specimen having the coating film (coating layer or film formation) is cut to obtain a section, and this section is polished. Then, the ceramic coating was photographed with a scanning electron microscope, and the photographed images were processed with image processing software to analyze the diameters of the first and second ceramic grains. In the present invention, the cross-sectional area of the ceramic coating film of approximately 110 탆 2 was photographed, and the particle diameters of the first and second ceramic particles were analyzed. Further, in the present invention, the first and second ceramic grains have a maximum diameter in the range of about 50 nm to 2200 nm, and the longest axial length of the first and second ceramic grains is measured to calculate the number. However, Ceramic particles were also observed.

4 and 5, the ceramic coating 120 having improved plasma resistance according to the present invention includes a plurality of first ceramic particles 121 having a first particle size on a surface of a substrate 110, And a plurality of second ceramic particles 122 having a second particle size different from that of the first ceramic particles 121 and interposed between the first ceramic particles 121. That is, in the ceramic coating 120 according to the present invention, the first ceramic particles 121 having relatively small diameters are formed in the gaps, spaces, or gaps of the second ceramic particles 122 having relatively large diameters It forms a tightly packed shape.

More specifically, the first ceramic particles 121 have a first particle size range and a first mode, and the second ceramic particles 122 have a second particle size range larger than the first particle size range and a second particle size range larger than the first mode . In addition, the first ceramic particles 121 and the second ceramic particles 122 are mixed and coated on the substrate to form a dense ceramic coating 120 having a small porosity.

More specifically, the first particle size range of the first ceramic particles 121 is approximately 1 nm to 900 nm, the first mode number of the first ceramic particles 121 is approximately 250 nm to 800 nm, And may be at about 250 nm to 350 nm. However, the scope of the present invention is not limited in this range. For example, the first mode of the first ceramic particles 121 may be slightly smaller or slightly larger than the above-described numerical values.

Here, the first ceramic particles 121 have a characteristic similar to the normal distribution at about 200 nm to 900 nm around the first mode (between 250 nm and 800 nm) of the first ceramic particles 121, There are many first ceramic particles 121 smaller than 200 nm. That is, the smaller the diameter of the first ceramic particles 121, the more the number of the first ceramic particles 121 becomes. However, due to limitations of measurement and analysis equipment, the number or the number of first ceramic particles 121 in a region smaller than 200 nm is ignored in the present invention.

However, the fact that the first ceramic particles 121 have a first particle size of less than about 1 nm to 200 nm means that the particle diameter of the ceramic powder for the first ceramic particles 121 is also small. And that the first particle size of the first ceramic particles 121 is larger than about 900 nm means that the transmittance of the ceramic coating 110 starts to deteriorate.

Also, the second particle size range of the second ceramic particles 122 is approximately 900 nm to 10 μm, preferably approximately 900 nm to 3 μm, and the second mode of the second ceramic particles is approximately 1.0 μm to 5.0 μm , Preferably between about 1.0 [mu] m and 1.2 [mu] m. However, the scope of the present invention is not limited in this range, and for example, the second mode of the second ceramic particles may be slightly smaller or slightly larger than the above-mentioned numerical values.

If the second particle size 122 of the second ceramic particle 122 is smaller than about 900 nm, the lamination speed of the ceramic coating film is slower. If the second particle size 122 is larger than about 10 탆, The porosity is increased, and the internal structure becomes unstable.

The reason why the second particle size of the ceramic second particles 122 is limited to 3 mu m is due to the limitations of the analytical equipment and is not intended to limit the present invention.

In addition, the first ceramic particle may be referred to as a first ceramic grain, the second ceramic particle may be referred to as a second ceramic grain, and the ceramic powder may be referred to as a ceramic powder, but the present invention is not limited thereto .

On the other hand, the maximum number of the first modes may be approximately 2 to 10 times, preferably 2 to 5 times, more than the maximum number of the second modes.

5, the maximum number of the first modes of the first ceramic particles is about 40 at about 300 nm and the maximum number of the second modes of the second ceramic particles is about 10 < RTI ID = 0.0 > As a result, the maximum number of the first modes was about four times larger than the maximum number of the second modes. However, these numerical values do not limit the present invention. In addition, the size of the first ceramic particles and the second ceramic particles was about 900 nm, and the number thereof was about 2 to 3. In other words, the number of diameters (sizes) for distinguishing the first ceramic particles and the second ceramic particles is about 20 to 30% of the maximum number of the second modes.

In addition, when such a ratio (the maximum number of the first modes is approximately 2 to 10 times, preferably 2 to 5 times as large as the maximum number of the second modes) is exceeded, for example, the maximum number of the first modes When the ratio is larger than the above-mentioned ratio, the light transmittance of the ceramic coating is improved, which is advantageous in realizing the material characteristic but the ceramic coating layering rate is relatively slowed. As another example, when the maximum number of the first modes is smaller than the above-mentioned ratio, the deposition rate of the ceramic coating is increased but the porosity is increased, and accordingly, the surface microcrack becomes large and the ceramic coating becomes unstable.

The porosity of the above-described forming method and thus formed ceramic coating 120 may be approximately 0.01% to 1.0%, preferably approximately 0.01% to 0.2%. That is, the porosity is determined by the first particle size range and the first aspect ratio of the first ceramic particles 121 as described above, the second particle size range and the second mode particle size of the second ceramic particles 122, (Ratio) of the first and second modes, which the first and second modes 121 and 122 have, and when the numerical range is out of the above range, the deposition rate of the ceramic coating may be too slow or the porosity may become too large. That is, when the above-described forming method and the ceramic coating 120 thus formed have a porosity of about 0.01% to 1.0%, the surface microcracks are small, and thus the microstructure of the ceramic coating is stabilized.

Here, the porosity of the coating 120 is measured by the above-described image processing software, which is well known to those skilled in the art, and thus a detailed description thereof will be omitted.

Further, the thickness of the ceramic coating 120 may be approximately 1 [mu] m to 100 [mu] m. If the thickness of the ceramic coating 120 is less than about 1 탆, the substrate 110 is difficult to be used industrially. If the thickness of the ceramic coating 120 is more than about 100 탆, the light transmittance can be significantly reduced.

In addition, the light transmittance of the ceramic coating 120 can be adjusted to approximately 1% to 99%, and the light transmittance of the ceramic coating 120 is determined by the total thickness of the ceramic coating 120, The first and second particle size ranges of the ceramic particles 121 and 122, and the first and second modes. For example, assuming that the thickness of the ceramic coating 120 is the same and the maximum number of second modes is fixed, the light transmittance is set to be the maximum of the first mode of the first ceramic particles of the first and second ceramic particles 121, And the smaller the maximum number of the first modes of the first ceramic particles becomes, the smaller the number becomes. In addition, assuming that the maximum number of the second modes is fixed, regardless of the thickness of the ceramic coating 120, the maximum number of the first modes of the first ceramic particles of the first and second ceramic particles 121, And the smaller the maximum number of the first modes of the first ceramic particles becomes, the larger becomes.

The cross-sectional area ratio of the first ceramic particles 121 to the second ceramic particles 122 may be approximately 9: 1 to 5: 5, preferably 7.7: 2.3. Here, as described above, the analysis sectional area may be 110 탆 2 . When the cross-sectional area ratios of the first ceramic particles 121 and the second ceramic particles 122 are within the above-mentioned range, the porosity (porosity) is relatively small, the surface micro crack phenomenon does not occur, It is easy. For example, when the ratio of the first ceramic particles 121 is relatively large outside the above-described range, there is a problem that the formation / laminating time of the ceramic coating takes a long time. In the case where the ratio of the first ceramic particles 121 is relatively There is a problem that the porosity is increased. On the contrary, when the ratio of the second ceramic particles 122 is relatively large outside the above-described range, there is a problem that the formation / laminating time of the ceramic coating is fast but the porosity is high. In addition, the ratio of the second ceramic particles 122 When it is relatively small, the formation / laminating time of the ceramic coating takes a long time.

On the other hand, the first ceramic particles 121 and the second ceramic particles 122 may be brittle materials similar to those described above. The brittle material of the first and second ceramic particles of yttrium-based oxide, a fluoride, a nitride, Y 2 O 3 -Al 2 O 3 based compounds (YAG, YAP, YAM), B 4 C, ZrO 2, alumina (Al 2 O 3 ) And its equivalents, but the present invention is not limited to these materials.

Specifically, the first and second ceramic particles as the brittle material are selected from the group consisting of yttria (Y 2 O 3 ), YAG (Y 3 Al 5 O 12 ), rare earth series (Y and Sc, ) oxide, alumina (Al 2 O 3), bio-glass, silicon (SiO 2), HA (hydroxyapatite), titanium dioxide (TiO 2), and may be one or a mixture of two selected from the group consisting of an equivalent thereof, but , But the present invention is not limited to these materials.

More specifically, the first and second ceramic particles as the brittle material are selected from the group consisting of hydroxyapatite, calcium phosphate, bioglass, Pb (Zr, Ti) O 3 (PZT), alumina, titanium dioxide, zirconia (ZrO 2 ) 2 O 3 , yttria stabilized zirconia, Dy 2 O 3 , gd 2 O 3 , ceria 2 , gadolinium ceria (GDC) , Gadolinia doped Ceria), Magnesia (MgO), BaTiO 3 , NiMn 2 O 4 , potassium sodium niobate (KNaNbO 3 ), bismuth potassium titanate (BiKTiO 3 ), bismuth sodium titanate (BiNaTiO 3), CoFe 2 O 4, NiFe 2 O 4, BaFe 2 O 4, NiZnFe 2 O 4, ZnFe 2 O 4, MnxCo 3-x O 4 ( where, x is a real number in an amount of not more than 3), bismuth ferrite (BiFeO 3), bismuth zinc niobate (Bi 1.5 Zn 1 Nb 1.5O7) , lithium aluminum titanium phosphate glass ceramic, Li-La-Zr-O-based oxide Garnet, Li-La-Ti-O based Perovskite oxides, La -Ni -O based oxide, lithium iron phosphate, lithium-cobalt oxide, Li-Mn-O based spinel oxide (lithium manganese oxide), lithium aluminum gallium oxide, tungsten oxide, tin oxide, lanthanum nickel oxide, Aluminum nitride, silicon nitride, titanium nitride, AlON, silicon carbide, titanium carbide, tungsten carbide, magnesium boride, titanium boride, a mixture of metal oxides and metal nitrides, A mixture of metal oxide and metal carbide, a mixture of ceramic and polymer, a mixture of ceramic and metal, and an equivalent thereof.

Here, the substrate 110 may be any one selected from glass, metal, plastic, polymer resin, ceramic, and the like, but the present invention is not limited thereto.

6A to 6C are electron micrographs of a ceramic coating having improved plasma resistance formed of Y 2 O 3 according to an embodiment of the present invention. FIGS. 7A to 7C are electron micrographs of a ceramic coating having improved plasma resistance formed of Al 2 O 3 according to an embodiment of the present invention. FIGS. 8A to 8C are electron micrographs of a ceramic coating film having improved plasma resistance formed of a hydroxyapatite [Ca 10 (PO 4 ) 6 (OH) 2 ] according to an embodiment of the present invention.

In the photograph, "nano grain" refers to the first ceramic particle described so far, and "micro grain" refers to the second ceramic particle described so far.

As can be seen from a number of photographs, the first ceramic particles and the second ceramic particles constituting the ceramic coating according to the present invention are formed in a layered structure having a long length in a substantially horizontal direction or left and right direction, It is laid down in a horizontal direction. The porosity of the ceramic coating according to the present invention is remarkably reduced by the horizontally or transversely laid layer structure or the needle-like structure, and the surface micro-cracking phenomenon is reduced, thereby providing a stable microstructure. Thus, for example, in a semiconductor process of a product to which the present invention is applied, the plasma properties are improved and the corrosion rate is lowered, thereby lowering the particle scattering rate in the semiconductor processing chamber.

In addition, it should be understood by those skilled in the art that although the second grain size of the second ceramic grains is described as about 3 탆 due to the limitations of the analytical equipment, the second grain size of the second ceramic grains may be substantially within 10 탆 .

FIG. 9A shows a surface electron micrograph of a ceramic coating according to the prior art, and FIG. 9B shows an electron microscope photograph of a ceramic coating according to the present invention.

More specifically, FIG. 9A is a surface electron micrograph of a ceramic coating formed on a substrate surface by an atmosphere plasma spray (APS) method. In the APS system, an inert gas environment is created at a high energy of DC discharge generated by applying a high voltage in the atmosphere to generate a plasma. The temperature of the plasma has an extremely high thermal energy of about 10,000 ° C to 20,000 ° C. Further, ceramic powder having a particle size range of about 30 to 50 mu m is exposed to such ultra-high-temperature plasma, and is melted and sprayed on a substrate to form a coating having a particle size range of about 5 mu m to 10 mu m. However, since the ceramic powder exposed to the ultra-high temperature region undergoes a very rapid phase transformation and the melting time is uneven, the coating formed by the APS method has a high porosity (for example, 2 to 5%) as shown in FIG. 9A , And thus a large number of micro cracks are generated due to the high thermal shock of the coating. Thus, the APS-based coating has a high specific surface area and a large number of microcracks, so that the particles of the coating are etched during the application of the semiconductor / display manufacturing process to contaminate the process components and ultimately damage the semiconductor / give.

On the other hand, as shown in FIG. 9B, the ceramic coating according to the present invention is dense and has a small specific surface area. As described above, the coating film according to the present invention has a porosity of about 0.01% to 1.0%, which is much smaller than the conventional porosity. Therefore, it can be seen that the ceramic coating according to the present invention has much higher plasma resistance.

Table 1 below is a table comparing various physical properties of the ceramic coating formed by the conventional APS method and the ceramic coating formed by the method according to the present invention.

Prior Art (APS) Invention Hardness 1 to 2 GPa 9-13 GPa Bond strength 5 to 6 MPa 70 to 90 MPa Porosity 2 to 4% 0.01 to 1.0% Withstand voltage 10 to 20 V / m 80 to 120 V / m

As shown in Table 1, in the prior art, the hardness of the ceramic coating was 1 to 2 GPa, but in the present invention, it was 9 to 13 Gpa. In the prior art, the bonding strength of the ceramic coating was 5 to 6 MPa, but in the present invention, it was 70 to 90 MPa. In the prior art, the porosity of the ceramic coating was 2 to 4%, but in the present invention, it was 0.01 to 1.0%. Finally, in the prior art, the withstand voltage of the ceramic coating was 10 to 20 V / μm, but in the present invention, it was 80 to 120 V / μm.

As described above, the present invention has excellent hardness, bonding strength, porosity and withstand voltage of the ceramic coating film, and thus the resistance of the ceramic coating film in the plasma environment is improved.

Here, the hardness is measured by a trace generated by pressing a ceramic coating with a diamond quadrangular pyramid. The bonding strength is measured by pulling a ceramic coating formed on a substrate by a load cell, and withstanding voltage is measured by providing two electrodes on the ceramic coating. In addition, the porosity is measured by cutting a ceramic film and photographing it with an electron microscope to obtain an image, and analyzing the image with a computer equipped with image processing software. These various measuring methods are well known to those skilled in the art, and a detailed description thereof will be omitted.

On the other hand, the substrate on which the ceramic coating according to the present invention is formed may be a part exposed to a plasma environment. That is, the part may be an internal part of a semiconductor or process chamber for producing a display. More specifically, the components may include an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for chemical vapor deposition (CVD), a focus ring A wall liner, a shield, a cold pad, a source head, an outer liner, a deposition shiled, an upper liner, An exhaust plate, an edge ring, a mask frame, and the like. However, the present invention does not limit the substrate or parts on which such a coating is formed.

Thus, in the present invention, the first ceramic particles having the first particle size range and the first frequency and the second ceramic particles having the second particle size range relatively larger than the first particle size and the second mode larger than the first mode (Or a material) having a high light transmittance (or semitransparent) as well as a relatively high deposition rate in forming a ceramic coating film by forming a ceramic coating film by mixing and coexisting.

Furthermore, the first ceramic particle having the first particle size range and the first mode, and the second ceramic particle having the second particle size range and the second mode are mixed appropriately to form a ceramic coating, whereby a stable ceramic material having a porosity of less than 1.0% (A highly dense ceramic coating film structure) is provided, and surface micro cracking phenomenon does not occur.

In addition, in the present invention, the stress of the ceramic coating formed on the surface of the substrate can be easily adjusted to a desired value by controlling the particle diameter range and pressure difference of the ceramic powder.

In addition, in the present invention, the ceramic coating has improved hardness, bonding strength, porosity, and withstand voltage characteristics compared with the prior art, thereby improving the plasma resistance.

The present invention is not limited to the above-described embodiment, but may be applied to a method of forming a ceramic coating having improved plasma resistance according to the present invention, It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

110; A substrate 120; Ceramic coating
121; First ceramic particles 122; The second ceramic particle

Claims (16)

Receiving a plurality of ceramic powders having a first powder particle size range from a powder supply unit and transferring the ceramic powder using a transfer gas; And
A plurality of first ceramic particles having a first coating particle size range and a second coating particle having a first coating particle diameter larger than the first particle diameter range by colliding and crushing the transferred ceramic powder with a substrate in a process chamber at a speed of 100 to 500 m / Forming a ceramic coating mixed with a plurality of second ceramic particles having a particle diameter of 2,
The first ceramic particle has a first particle size range of 1 nm to 900 nm,
Wherein the second ceramic particle has a second particle size range of 900 nm to 10 占 퐉. The method according to claim 1,
Wherein the first powder particle diameter range of the ceramic powder is 0.1 to 25 占 퐉. 3. The method of claim 2,
Wherein the ceramic powder further comprises a powder second particle size range,
Wherein the ceramic powder has a second particle diameter range of 15 to 50 占 퐉. The method according to claim 1,
Wherein the number of the first ceramic particles is greater than the number of the second ceramic particles. The method according to claim 1,
Wherein the forming of the ceramic coating comprises maintaining the transfer gas or the substrate at a temperature of 0 ° C to 1000 ° C. The method according to claim 1,
Wherein the ceramic powder is a brittle material. A plurality of first ceramic particles having a first particle size range; And
And a plurality of second ceramic particles having a second particle size range larger than the first particle size range,
The first ceramic particles and the second ceramic particles are mixed and coated on the base material to form a ceramic coating,
Wherein the ceramic coating has a porosity of 0.01% to 1.0%. 8. The method of claim 7,
Wherein the first ceramic particle has a first particle size range of 1 nm to 900 nm,
And a second particle size range of the second ceramic particles is 900 nm to 10 占 퐉. 8. The method of claim 7,
Wherein the number of the first ceramic particles is greater than the number of the second ceramic particles. delete 8. The method of claim 7,
Wherein the first and second ceramic particles are a brittle material. 8. The method of claim 7,
Wherein the substrate is a part exposed to a plasma environment. 13. The method of claim 12,
Wherein said component is an internal component of a semiconductor or process chamber for producing a display. 14. The method of claim 13,
The component may be an electrostatic chuck, a heater, a chamber liner, a shower head, a boat for CVD (Chemical Vapor Deposition), a focus ring, A liner, a shield, a cold pad, a source head, an outer liner, a deposition shiled, an upper liner, an exhaust plate an exhaust ring, an exhaust ring, an edge ring, and a mask frame. 8. The method of claim 7,
The first and second ceramic particles may be selected from the group consisting of yttrium-based oxide, aluminum nitride, silicon nitride, titanium nitride, Y 2 O 3 -Al 2 O 3 -based compound, B 4 C, ZrO 2, and Al 2 O 3 Or a mixture of two kinds of ceramic coatings. 8. The method of claim 7,
Wherein the first ceramic particle and the second ceramic particle have a cross sectional area ratio of 9: 1 to 5: 5.
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US15/112,079 US10590542B2 (en) 2014-01-17 2014-12-04 Method for forming coating having composite coating particle size and coating formed thereby
CN201480075369.7A CN106029949B (en) 2014-01-17 2014-12-04 Method for forming a coating having a composite coating particle size and coating formed thereby
PCT/KR2014/011795 WO2015108276A1 (en) 2014-01-17 2014-12-04 Method for forming coating having composite coating particle size and coating formed thereby
JP2015557964A JP6058822B2 (en) 2014-01-17 2014-12-04 Method for forming ceramic coating with improved plasma resistance and ceramic coating thereby
PCT/KR2014/011796 WO2015108277A1 (en) 2014-01-17 2014-12-04 Method for forming ceramic coating having improved plasma resistance and ceramic coating formed thereby
JP2015557963A JP6058821B2 (en) 2014-01-17 2014-12-04 Method for forming a coating having composite coating particle size and coating by the same
US15/112,086 US10982331B2 (en) 2014-01-17 2014-12-04 Method for forming ceramic coating having improved plasma resistance and ceramic coating formed thereby
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WO2018147702A1 (en) * 2017-02-10 2018-08-16 아이원스 주식회사 Glass coating structure and method for forming same
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KR102124766B1 (en) * 2019-12-31 2020-06-19 (주)삼양컴텍 Plasma processing apparatus and manufacturing method of the same
KR102234171B1 (en) * 2019-12-31 2021-03-31 (주)삼양컴텍 Manufacturing method of low-resistance silicon carbide composite
CN114507837A (en) * 2022-01-17 2022-05-17 北京富创精密半导体有限公司 Preparation method of high-compactness voltage-resistant plasma spraying yttrium oxide coating

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KR101828862B1 (en) * 2015-07-10 2018-02-13 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus and shower head
WO2018147702A1 (en) * 2017-02-10 2018-08-16 아이원스 주식회사 Glass coating structure and method for forming same
CN108709427A (en) * 2018-05-24 2018-10-26 浙江中硅新材料有限公司 A kind of furnace body of dustless heating furnace
KR102124766B1 (en) * 2019-12-31 2020-06-19 (주)삼양컴텍 Plasma processing apparatus and manufacturing method of the same
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