KR101398625B1 - Substrate treating apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. According to an aspect of the present invention, there is provided a substrate processing apparatus including: a process chamber for forming an internal space in which a substrate is processed; A substrate support member disposed within the process chamber and supporting the substrate; A showerhead provided to face the substrate support member and having a plasma supply hole for partitioning the inner space into an upper space and a lower space, the upper space and the lower space communicating with each other; An excitation gas supply unit for supplying an excitation gas to the upper space; A process gas supply unit for supplying process gas to the lower space; And a microwave application unit for applying a microwave to the upper space, wherein the process gas supply unit includes: a first process gas supply unit for supplying the process gas from the showerhead to the lower space; And a second process gas supply unit for supplying the process gas from the inner wall of the process chamber to the lower space.

Description

[0001] SUBSTRATE TREATING APPARATUS [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for processing a substrate, and more particularly, to an apparatus using plasma for substrate processing.

In the manufacture of a semiconductor device, it is required to form a single crystal silicon film on a substrate. The formation of the silicon film is performed on the upper surface of the substrate on which the pattern is formed. The substrate may be subjected to fixation to form a silicon film after the oxide film formed on the upper surface thereof is removed. Methods of forming a single crystal silicon film on a substrate include low pressure chemical vapor deposition (LPCVD) and ultra high vacuum chemical vapor deposition (UHVCVD).

Chemical vapor deposition is performed at a temperature of 850 DEG C or higher to grow a silicon film on a substrate into a single crystal. Diffusion of impurities contained in the substrate occurs when the growth of the silicon film is performed at a high temperature. In one example, impurities may be included in the source / drain junction regions provided for the formation of the transistors. When the diffusion of impurities occurs, it is difficult to form a shallow junction region.

In ultra high vacuum chemical vapor deposition, crystal growth is carried out at about 700 ° C. However, in the ultra-high vacuum chemical vapor deposition method, the growth rate of crystals is slow and the efficiency of substrate processing is low.

An object of the present invention is to provide a substrate processing apparatus and method for generating a plasma using a microwave.

The present invention also provides a substrate processing apparatus and method for forming a high-density silicon film on a substrate.

The present invention also provides a substrate processing apparatus and method for forming a silicon film on a substrate at a low temperature.

The present invention also provides a substrate processing apparatus and method in which diffusion of impurities is prevented.

The present invention also provides a substrate processing apparatus and method capable of adjusting the distribution of films formed on a substrate.

According to an aspect of the present invention, there is provided a process chamber comprising: a processing chamber for forming an inner space in which a substrate is processed; A substrate support member disposed within the process chamber and supporting the substrate; A showerhead provided to face the substrate support member and having a plasma supply hole for partitioning the inner space into an upper space and a lower space, the upper space and the lower space communicating with each other; An excitation gas supply unit for supplying an excitation gas to the upper space; A process gas supply unit for supplying process gas to the lower space; And a microwave application unit for applying a microwave to the upper space, wherein the process gas supply unit includes: a first process gas supply unit for supplying the process gas from the showerhead to the lower space; And a second process gas supply unit for supplying the process gas from the inner wall of the process chamber to the lower space.

The first process gas supply unit may include a distribution line formed in the showerhead and through which the excitation gas flows; And spray holes formed on the lower surface of the shoe head to communicate with the dispensing line and into which the process gas is injected into the lower space.

The injection hole may be inclined with respect to a straight line perpendicular to the bottom surface of the shower head.

The injection hole may include a first injection hole formed to be inclined with respect to a straight line perpendicular to a bottom surface of the shower head; And a second ejection hole formed to be inclined with respect to the straight line in a direction different from the first ejection hole.

The showerhead may further include: a fixing part fixed to the process chamber; And rib portions extending inwardly from the fixing portion, wherein the plasma supplying hole may be formed between the rib portions or between the rib portions and the fixing portion.

Further, the distribution line may be formed inside the rib portion, and the injection hole may be formed in the rib portion.

Further, the distribution line may be formed inside the fixing portion and the rib portion, and the injection hole may be formed in the rib portion.

Further, the rib portion may include a plurality of distribution rib portions formed to have different radii with respect to the center of the showerhead; And a connection rib portion formed between the distribution rib portions or between the distribution rib portion and the fixing portion.

A process gas tank for supplying the process gas; And a showerhead line connecting the process gas tank and the dispensing line.

In addition, the distribution lines may be formed in plural in each of the distribution rib portions to form separate flow paths, and the shower head lines may be branched and connected to each of the distribution lines forming a separate flow path.

The distribution rib portion may include a first distribution rib portion, a second distribution rib portion, and a third distribution rib portion that are sequentially disposed in the radial direction of the shower head, and the distribution line may include a first distribution rib portion, A first distribution line, a second bonsai line, and a third distribution line formed in the second distribution rib portion and the third distribution rib portion, respectively.

The first distribution line and the second distribution line may be formed so as to communicate with each other, and the third distribution line may form a flow path separate from the first distribution line and the second distribution line.

The first distribution line and the third distribution line may be formed to interlock with each other, and the second distribution line may form a flow path separate from the first distribution line and the third distribution line.

The second process gas supply unit may include: a process gas nozzle positioned on a side wall of the process chamber; And a lower nozzle line connected to the process gas nozzle and supplying the process gas to the process gas nozzle.

In addition, the process gas nozzles may be provided on the side wall of the process chamber in plural along the circumferential direction.

Further, the process gas nozzle may be provided with a discharge port in a ring shape on the side wall of the process chamber.

The microwave application unit may further include: a microwave power source for generating the microwave; A waveguide for transmitting the microwave; A coaxial transducer positioned in the inner space of the waveguide and converting a mode of the transmitted microwave; And an antenna member for transmitting the microwave from the coaxial transducer to the upper space.

According to an embodiment of the present invention, a plasma can be generated using a microwave.

According to an embodiment of the present invention, a high-density silicon film can be formed on a substrate.

Further, according to an embodiment of the present invention, a silicon film can be formed on a substrate at a low temperature.

Further, according to the embodiment of the present invention, diffusion of impurities can be prevented.

According to an embodiment of the present invention, the distribution of the film formed on the substrate can be controlled.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a view showing a bottom surface of the antenna.
3 is a view showing a dispensing line formed in a showerhead.
4 is a view showing the bottom surface of the showerhead.
5 is a cross-sectional view of AA of Fig.
6 is a view showing a substrate on which a pattern is formed.
7 is a cross-sectional view of a rib portion according to another embodiment.
8 is a cross-sectional view of a rib portion according to yet another embodiment.
9 is a view showing a showerhead according to another embodiment.
10 and 11 are views showing a showerhead according to yet another embodiment.
12 is a view showing a second process gas supply unit according to another embodiment.
13 is a view showing a second process gas supply unit according to another embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus includes a process chamber 100, a substrate support member 200, a microwave application unit 300, an excitation gas supply unit 400, and a process gas supply unit 600. The substrate processing apparatus performs a processing process of epitaxially growing silicon on the substrate W.

The process chamber 100 has an internal space formed therein. A showerhead 500 to be described later is located inside the process chamber. The shower head 500 divides the internal space into an upper space 101 and a lower space 102. An opening (not shown) may be formed in one side wall of the process chamber 100. The opening may be formed to be located in the lower space 102. The opening is provided as a passage through which the substrate W can enter and exit the process chamber 100. The opening is opened and closed by a door (not shown). An exhaust hole 103 is formed in the bottom surface of the process chamber 100. The exhaust hole 103 is connected to the exhaust line 121. The process by-products generated in the process and the gas staying in the process chamber 100 may be discharged to the outside through the exhaust line 121.

A substrate support member 200 is positioned within the process chamber 100. The substrate support member 200 is located in the lower space 102. The substrate support member 200 supports the substrate W. [ The substrate support member 200 is provided with a heater 210. The heater 210 may be provided as a coil. The coil may be provided with a spiral formation. Or the coils may be arranged such that the rings having different radii have the same center. The heater 210 is electrically connected to an external power source (not shown). The heater 210 generates heat by resisting a current applied from an external power source. The generated heat is transferred to the substrate W. The substrate W is held at a predetermined temperature by the heat generated in the heater 210.

The microwave application unit 300 applies microwaves into the process chamber 100. The microwave applying unit 300 includes a microwave power source 310, a waveguide 320, a coaxial transducer 330, an antenna member 340, a dielectric block 351, a dielectric plate 370, and a cooling plate 380 do.

The microwave power source 310 generates a microwave. For example, the microwave generated from the microwave power source 310 may be a TE mode (transverse electric mode) having a frequency of 2.3 GHz to 2.6 GHz. The waveguide 320 is located on one side of the microwave power source 310. The waveguide 320 is provided in a tubular shape having a polygonal or circular cross-section. The inner surface of the waveguide 320 is provided as a conductor. In one example, the inner surface of the waveguide 320 may be provided with gold or silver. The waveguide 320 provides a passage through which microwaves generated in the microwave power source 310 are transmitted.

The coaxial transducer 330 is located inside the waveguide 320. The coaxial transducer 330 is located on the opposite side of the microwave power source 310. One end of the coaxial transducer 330 is fixed to the inner surface of the waveguide 320. The coaxial transducer 330 may be provided in a cone shape having a smaller cross-sectional area than the upper end. The microwave transmitted through the inner space 321 of the waveguide 320 is converted in the coaxial converter 330 and propagated downward. In one example, the microwave can be converted to a TEM mode (transverse electromagnetic mode) in a TE MODE (transverse electric mode).

The antenna member 340 transmits the mode-converted microwave from the coaxial converter 330 downward. The antenna member 340 includes an outer conductor 341, an inner conductor 342, and an antenna 343. The outer conductor 341 is located below the waveguide 320. A space 341a connected to the inner space of the waveguide 320 is formed downward in the outer conductor 341.

The inner conductor 342 is located inside the outer conductor 341. The inner conductor 342 is provided as a rod in the shape of a cylinder, and its longitudinal direction is arranged in parallel with the up-and-down direction. The outer circumferential surface of the inner conductor 342 is spaced apart from the inner surface of the outer conductor 341.

The upper end of the inner conductor 342 is inserted and fixed to the lower end of the coaxial transducer 330. The inner conductor 342 extends downward and its lower end is located inside the process chamber 100. The lower end of the inner conductor 342 is fixedly coupled to the center of the antenna 343. The inner conductor 342 is disposed perpendicular to the upper surface of the antenna 343.

2 is a view showing a bottom surface of the antenna.

1 and 2, the antenna 343 is provided in a plate shape. In one example, the antenna 343 may be provided as a thin disc. The antenna 343 is arranged to face the showerhead 500. [ A plurality of slot holes 344 are formed in the antenna 343. The slot holes 344 may be provided in a 'x' shape. A plurality of slot holes 344 are arranged in a plurality of ring shapes in combination with each other. The area of the antenna 343 in which the slot holes 344 are formed is referred to as a first area A1 and the area of the antenna 343 in which the slot holes 344 are not formed is referred to as a second area B1, , B3). The first areas A1, A2, and A3 and the second areas B1, B2, and B3 each have a ring shape. A plurality of first regions A1, A2, and A3 are provided and have different radii from each other. The first areas A1, A2, and A3 have the same center and are disposed apart from each other in the radial direction of the antenna 343. [ A plurality of second regions B1, B2, and B3 are provided and have different radii from each other. The second regions B1, B2, and B3 have the same center and are disposed apart from each other in the radial direction of the antenna 343. [ The first areas A1, A2, and A3 are located between the adjacent second areas B1, B2, and B3, respectively. Unlike the above-described shape, the slot holes 344 may be provided in various shapes such as a '-' character or a '+' character.

The dielectric plate 370 is located on top of the antenna 343. The dielectric plate 370 is provided with a dielectric such as alumina, quartz, or the like. The microwave propagated in the vertical direction in the microwave antenna 343 propagates in the radial direction of the dielectric plate 370. The microwaves propagated to the dielectric plate 370 are compressed and resonated. The resonated microwaves are transmitted through the slot holes 344 of the antenna 343. The microwave passing through the antenna 343 can be converted to a plane wave in a TEM mode (transverse electromagnetic mode).

A cooling plate 380 is provided on the top of the dielectric plate 370. The cooling plate 380 cools the dielectric plate 370. The cooling plate 380 may be made of an aluminum material. The cooling plate 380 can cool the dielectric plate 370 by flowing a cooling fluid to a cooling channel (not shown) formed therein. The cooling system may be water-cooled or air-cooled.

A dielectric block 351 is provided below the antenna 343. The upper surface of the dielectric block 351 may be spaced apart from the bottom surface of the antenna 343 by a predetermined distance. Alternatively, the top surface of the dielectric block 351 may be in contact with the bottom surface of the antenna 343. The dielectric block 351 is provided as a dielectric such as alumina or quartz. The microwaves passing through the slot holes 344 of the antenna 343 are radiated to the upper space 101 via the dielectric block 351. [ The microwave has a frequency of gigahertz. Therefore, the microwave is low in permeability and does not reach the lower space 102.

The excitation gas supply unit 400 includes an excitation gas tank 401 and an excitation gas nozzle 411. The excitation gas supply unit (400) supplies excitation gas to the upper space.

The excitation gas tank 401 stores the excitation gas. The excitation gas may be hydrogen, helium, argon or nitrogen. The discharge nozzle of the excitation gas nozzle 411 is located in the upper space 101. The excitation gas nozzle 411 is connected to the excitation gas tank 401 by an excitation gas line 420. The gas line 420 may be provided with a valve (not shown). The valve controls the opening and closing of the excitation gas line 420 and the flow rate of the excitation gas. The excitation gas is injected into the upper space and excited into the plasma state by microwaves.

3 is a view showing a dispensing line formed in a showerhead.

Referring to FIGS. 1 and 3, the showerhead 500 is positioned to face the substrate support member 200. The inner space is partitioned into an upper space 101 and a lower space 102 by a shower head 500. The showerhead 500 is grounded by the lead wire 501. The fixed portion 510 of the showerhead 500 is fixed to the side wall of the process chamber 100. The fixing portion 510 may be provided in an annular shape corresponding to the shape of the side wall of the process chamber 100. When the side wall of the process chamber 100 is circular, the fixing portion 510 may be provided in a circular ring shape. The rib portion 520 is formed on the inner side of the fixing portion 510. The rib portions 520 may be arranged in a lattice pattern. Accordingly, a plasma supply hole 530 is formed between the rib portions 520. The plasma supply holes 530 are formed so as to be uniformly arranged inside the fixing portion 510. The plasma excited in the upper space 101 is uniformly supplied to the lower space 102 through the plasma supply hole 530. The excited plasma includes positive ions, negative ions, and neutral particles. The positive ions and the negative ions can be moved out of the process chamber 100 through the conductive line 501. Therefore, the introduction of the positive ions and the negative ions into the lower space 102 is blocked, so that the positive charging layer or the negative charging layer is not formed on the substrate W. The plasma supplied to the lower space dissociates the process gas supplied from the process gas supply unit.

The process gas supply unit 600 includes a first process gas supply unit 610 and a second process gas supply unit 620.

The first process gas supply unit 610 includes a distribution line 611 and an injection hole 614. The first process gas supply unit 610 supplies the process gas from the showerhead 500 to the lower space 102. The distribution line 611 is provided as a tube formed inside the fixing portion 510 and the rib portion 520. The first distribution line 612 is formed in the fixing portion 510. The dispensing line 611 formed in the anchoring portion 510 is connected to the process gas tank 601 through the showerhead line 602. The process gas is provided as a compound containing silicon. For example, the process gas may be provided as silane (SiH4). The process gas stored in the process gas tank 601 is supplied to the distribution line 611 through the shower head line 602. The shower head line 602 may be provided with a valve 603. The valve 603 can open and close the shower head line 602 and adjust the flow rate of the process gas flowing through the shower head line 602. The second distribution line 613 is formed in the rib portion 520. The second distribution line 613 is in communication with the first distribution line 612. In addition, the second distribution lines 613 formed in the rib portion 520 communicate with each other. The process gases supplied through the shower head line 602 are distributed along the first distribution line 612. The process gas flowing in the first distribution line 612 flows into the second distribution line 613. Thus, the process gas can be uniformly supplied to the second distribution line 613.

Fig. 4 is a bottom view of the showerhead, and Fig. 5 is a sectional view taken along line A-A of Fig.

Referring to FIGS. 1, 3 and 5, spray holes 614 are formed on the bottom surface of the showerhead 500. The injection hole 614 is uniformly formed on the bottom surface of the rib portion 520. Adjacent spray holes 614 are spaced apart from each other by a certain distance. The injection hole 614 communicates with the second distribution line 613. The process gas flowing through the second distribution line 613 is supplied to the lower space 102 through the injection hole 614. The process gas is dissociated by the plasma supplied through the plasma supply hole in the lower space 102.

According to one embodiment of the present invention, the process gas is supplied to the lower space 102 through the injection holes 614 uniformly formed in the showerhead 500 and then dissociated by the plasma. Thus, the process gas can be uniformly supplied to the top of the substrate after dissociation.

The second process gas supply 620 includes a process gas nozzle 621 and a lower nozzle line 622. The second process gas supply unit 620 supplies the process gas to the lower space 102. Process gas nozzles 621 are located on the side walls of process chamber 100. The process gas nozzle 621 may be positioned adjacent the lower surface of the showerhead 500. The process gas nozzle 621 is connected to the process gas tank 601 through a lower nozzle line 622. The lower nozzle line 622 may be provided with a valve (not shown). The valve can regulate the flow rate of the process gas flowing through the lower nozzle line 622 and the lower nozzle line 622. The process gas nozzle 621 is formed so that its longitudinal direction is different from the flow direction of the plasma supplied to the plasma supply hole 530. Therefore, the process gas discharged to the process gas nozzle 621 has high reactivity with the plasma. The second process gas supply 620 supplies process gas adjacent the sidewalls of the process chamber 100. The center of the lower space 102 and the outer side of the lower space 102 are uniformly supplied with the process gas by the first process gas supply unit 610 and the second process gas supply unit 620.

The process gas supplied to the lower space 102 is dissociated by the plasma. For example, silanes dissociate into hydrogen ions and silicon ions. When the process gas is dissociated by using a high-frequency microwave, a high-density plasma is formed. Silicon ions are supplied to the upper portion of the substrate W placed on the substrate supporting member 200. Further, the microwave does not reach the lower space 102. Thus, the process gas is not susceptible to microwaves.

6 is a view showing a substrate on which a pattern is formed.

Referring to Figs. 1 to 6, the process of selective epitaxial growth of silicon on the substrate W will be described.

The substrate W is carried into the process chamber 100 and placed in the substrate support member 200. The substrate W is provided as a silicon wafer. A pattern is formed on the substrate W by the insulating film P. For example, the insulating film P may be formed of silicon dioxide. On the substrate W, an exposed portion E is formed between the pattern and the pattern. In the exposed portion (E), silicon is exposed on the upper surface.

The substrate W is pre-cleaned, and the oxide film formed on the upper surface is removed. The excitation gas supply unit 400 supplies excitation gas to the upper space 101 and the microwave application unit 300 applies microwaves to the upper space 101. The excitation gas is excited by the plasma by the microwave and then supplied to the lower space 102. The oxide film formed on the upper surface of the substrate W is removed by the plasma formed by the excitation gas.

Further, the substrate W can be brought into the process chamber 100 with the oxide film removed. In this case, the pre-clean process may be omitted.

When the oxide film is removed, silicon is selectively epitaxially grown on the substrate (W). The excitation gas supply unit 400 supplies excitation gas to the upper space 101 and the microwave application unit 300 applies microwaves to the upper space 101. The excitation gas is excited by the plasma and then supplied to the lower space 102. The first excitation gas excited by the microwaves can form a high-density plasma. The process gas supply unit 600 supplies the process gas to the lower space 102. In the lower space 102, the process gas is dissociated by a plasma to supply silicon ions to the top of the substrate W. Silicon ions adhere to the exposed portion (E), and silicon is selectively epitaxially grown. Since the high-density plasma is supplied to the lower space 102, most of the supplied process gas is dissociated. High-density silicon ions can be supplied to the upper portion of the substrate W. Therefore, a high-density silicon film is formed on the substrate W. On the upper surface of the insulating film P, growth of silicon is suppressed. On the upper surface of the insulating film P, silicon may be grown as a polycrystal.

After selective epitaxial growth of silicon for a period of time, a selective etching process is performed. The selective etching process is performed in the same manner as the pre-clean process. The plasma formed by the excitation gas etches the upper surface of the insulating film P and the upper surface of the exposed portion E. The polycrystalline silicon formed on the upper surface of the insulating film P is etched at a higher rate than the monocrystalline silicon formed on the upper surface of the exposed portion E. [ Accordingly, plasma is supplied to the upper portion of the substrate W for a predetermined period of time to remove silicon crystals formed on the upper surface of the insulating film P.

Selective epitaxial growth and selective etching can be repeated several times. Therefore, the thickness of the silicon single crystal formed on the exposed portion E can be adjusted.

According to the embodiment of the present invention, only the process gas dissociated by plasma or plasma is supplied to the upper portion of the substrate W. Even if the microwave does not reach or reaches the lower space 102, the influence by the microwave is extremely small. Thus, the plasma or dissociated process gas supplied to the top of the substrate W becomes colder than the gas used for conventional selective epitaxial fixation. When the temperature at which the silicon crystal is grown is low, the diffusion of impurities contained in the substrate W is reduced.

7 is a cross-sectional view of a rib portion according to another embodiment.

Referring to FIG. 7, the injection hole 616 may be formed to be inclined with respect to a straight line perpendicular to the bottom surface of the shower head 500. The configurations of the rib portion 521 and the second distribution line 615 are the same as in Figs. 3 and 4. Fig. The process gas flowing in the injection hole 616 is injected obliquely. The flow direction of the plasma supplied to the upper space is provided differently from the process gas. For example, the plasma flows in a direction perpendicular to the lower surface of the process chamber 100 by gravity. The flow direction of the plasma and the process gas are different, so that the number of collisions and the degree of energy transfer at the time of collision increase.

The process gas injected in the injection hole 616 according to another embodiment of the present invention is increased in reactivity with the plasma.

8 is a cross-sectional view of a rib portion according to yet another embodiment.

Referring to FIG. 8, adjacent injection holes 618 may be provided in pairs. The configurations of the rib portion 523 and the second distribution line 617 are the same as in Figs. 3 and 4. The first injection hole 618a and the second injection hole 618b may be inclined with respect to a straight line perpendicular to the bottom surface of the shower head 500. The first injection hole 618a and the second injection hole 618b are formed to have different inclination directions. Accordingly, the process gas injected from the first injection hole 618a and the process gas injected from the second injection hole 618b are directed to the lower part of the different plasma supply holes 530. [ The flow direction of the process gas is formed to be opposite to the flow direction of the plasma, so that the reactivity of the process gas and the plasma is increased. Further, a large amount of process gas can be uniformly supplied to the lower portion of the plasma supply hole 530. Thus, a high-density dissociated process gas can be supplied to the top of the substrate.

9 is a view showing a showerhead according to another embodiment.

9, rib portion 542 includes dispense rib portions 543 and connecting rib portions 544.

The distribution rib portions 543 are provided in several annular shapes having different radii from each other with respect to the center of the shower head 540. For example, the second distribution rib portion 543b and the third distribution rib portion 543c can be sequentially positioned outside the first distribution rib portion 543a having the smallest radius. The distance between the distribution rib portions 543 may be the same. The third distribution rib portion 543c and the fixing portion 541 are connected to each other by the connecting rib portion 544.

Each distribution rib portion 543 is formed with a distribution line 631 along the circumferential direction inside. Each distribution line 631 is not connected to each other and forms a separate flow path. Each dispensing line 631 is connected to the process gas tank 601 by a showerhead line 634. For example, the first distribution line 631a, the second distribution line 631b, and the third distribution line 631c are connected to a first branch line 632a, a second branch line 632b, 632c. The first branch line 632a to the third branch line 632c are arranged in parallel with each other. The first branch line 632a to the third branch line 632c are provided with a valve 635, respectively. The first valve 635a, the second valve 635b and the third valve 635c control the flow rate of the process gas which opens and closes the first branch line 632a to the third branch line 632c, respectively. The first branch line 632a to the third branch line 632c may be connected to the main line 633 connected to the process gas tank 636. [ Or the first branch line 632a to the third branch line 632c may be directly connected to the process gas tank 601. [ Discharge ribs 543 are formed with injection holes (not shown) connected to the distribution lines 631.

According to an embodiment of the present invention, the amount of process gas flowing through each branch line can be adjusted. Therefore, the amount of the process gas can be adjusted according to the position of the lower space.

10 and 11 are views showing a showerhead according to yet another embodiment.

10, the rib portion 552 includes a distribution rib portion 553 and a connection rib portion 554. The configuration of the first distribution rib portion 553a, the second distribution rib portion 553b, the third distribution rib portion 553c and the connection rib portion 554 formed in the shower head 550 is the same as that of the shower head 540). A dispense line 641 is connected to the process gas tank 646 by a showerhead line 644. Non-adjacent distribution lines 641 may be formed to communicate with each other. For example, the first distribution line 641a and the third distribution line 641c may be formed to communicate with each other. The first distribution line 641a and the third distribution line 641c are connected to the first branch line 642a. The second distribution line 641b is connected to the second secretion line. The first branch line 642a and the second branch line 642b are arranged in parallel with each other. The first branch line 642a and the second branch line 642b are provided with a valve 645, respectively. The first valve 645a and the second valve 645b control the flow rate of the process gas that opens and closes the first branch line 642a and the second branch line 642b, respectively. The first branch line 642a and the second branch line 642b may be connected to a main line 643 connected to the process gas tank 636. [

11, rib portion 562 includes dispense rib portions 563 and connecting rib portions 564. The configuration of the first distribution rib portion 563a, the second distribution rib portion 563b, the third distribution rib portion 563c and the connection rib portion 564 formed in the shower head 560 is the same as that of the shower head 540). The distribution lines 651 adjacent to each other can be formed to communicate with each other. The dispensing line 651 is connected to the process gas tank 656 by a showerhead line 654. For example, the second distribution line 651b and the third distribution line 651c may be formed to communicate with each other. The first distribution line 651a is connected to the first branch line 652a. The second distribution line 651b and the third distribution line 651c are connected to the second branch line 652b. The first branch line 652a and the second branch line 652b are provided with a valve 655, respectively. The first valve 655a and the second valve 655b control the flow rate of the process gas that opens and closes the first branch line 652a and the second branch line 652b, respectively. The first branch line 652a and the second branch line 652b may be connected to a main line 653 connected to the process gas tank 656. [

12 is a view showing a second process gas supply unit according to another embodiment.

Referring to FIG. 12, a plurality of process gas nozzles 661 may be provided. Process gas nozzles 661 are arranged in the circumferential direction on the side walls of the process chamber 110. The process gas nozzles 661 may be arranged at equal intervals. Process gas nozzles 621 are connected to process gas tank 663 via lower nozzle lines 662, respectively.

According to the embodiment of the present invention, it is possible to uniformly supply the process gas to the lower space adjacent to the side wall of the chamber.

13 is a view showing a second process gas supply unit according to another embodiment.

Referring to FIG. 13, the process gas nozzle 671 may be provided in a ring shape. Thus, the discharge port of the process gas nozzle 671 is placed in a ring shape on the side wall of the process chamber 120.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: process chamber 101: upper space
102: lower space 200: substrate support member
300: microwave applying unit 310: microwave power source
320: waveguide 330: coaxial converter
340: Antenna member 400: Excitation gas supply unit
500: showerhead 600: process gas supply unit
610: first process gas supply unit 620: second process gas supply unit

Claims (17)

A process chamber for forming an internal space in which the substrate is processed;
A substrate support member disposed within the process chamber and supporting the substrate;
The plasma processing apparatus according to any one of claims 1 to 3, wherein the plasma processing apparatus further comprises: a plasma generating device for generating plasma, ;
An excitation gas supply unit for supplying an excitation gas to the upper space;
A process gas supply unit for supplying the process gas to the lower space; And
And a microwave applying unit for applying a microwave to the upper space,
Wherein the process gas supply unit includes:
A first process gas supply unit for supplying the process gas from the showerhead to the lower space; And
And a second process gas supply unit for supplying the process gas from the inner wall of the process chamber to the lower space. The method according to claim 1,
Wherein the first process gas supply unit includes:
A distribution line formed inside the showerhead and through which the excitation gas flows; And
Wherein the spray holes are formed on a bottom surface of the shawe head so as to communicate with the distribution line, and the process gas is injected into the lower space. 3. The method of claim 2,
Wherein the injection hole is formed to be inclined with respect to a straight line perpendicular to the bottom surface of the showerhead. 3. The method of claim 2,
The injection hole
A first injection hole formed to be inclined with respect to a straight line perpendicular to a bottom surface of the showerhead; And
And a second ejection hole formed to be inclined with respect to the straight line in a direction different from the first ejection hole. 5. The method according to any one of claims 1 to 4,
The shower head includes:
A fixing part fixed to the process chamber; And
And rib portions extending inwardly from the fixing portion,
Wherein the plasma supply hole is formed between the rib portions or between the rib portions and the fixing portion. 6. The method of claim 5,
The distribution line is formed inside the rib portion,
And the injection hole is formed in the rib portion. 6. The method of claim 5,
The distribution line is formed inside the fixed portion and the rib portion,
And the injection hole is formed in the rib portion. 6. The method of claim 5,
The rib portion
A plurality of distribution ribs formed to have different radii with respect to the center of the showerhead; And
And a connection rib portion formed between the distribution rib portions or between the distribution rib portion and the fixing portion. 9. The method of claim 8,
A process gas tank for supplying the process gas; And
And a showerhead line connecting the process gas tank and the dispensing line. 10. The method of claim 9,
Wherein the distribution lines are formed in each of the distribution rib portions to form a separate flow path,
Wherein the showerhead is branched and connected to each of the distribution lines forming a separate flow path. 10. The method of claim 9,
The distribution rib portion
A first distribution rib portion, a second distribution rib portion, and a third distribution rib portion that are sequentially disposed in the radial direction of the shower head,
Wherein the distribution line comprises:
A first dispense line, a second dispense line, and a third dispense line formed in the first dispense rib portion, the second dispense rib portion, and the third dispense rib portion, respectively. 12. The method of claim 11,
Wherein the first distribution line and the second distribution line are formed so as to communicate with each other,
Wherein the third distribution line forms a flow path separate from the first distribution line and the second distribution line. 12. The method of claim 11,
The first distribution line and the third distribution line are formed to be interlocked with each other,
Wherein the second distribution line forms a flow path separate from the first distribution line and the third distribution line. 5. The method according to any one of claims 1 to 4,
Wherein the second process gas supply unit includes:
A process gas nozzle located on a side wall of the process chamber; And
And a lower nozzle line connected to the process gas nozzle for supplying the process gas to the process gas nozzle. 15. The method of claim 14,
Wherein the plurality of process gas nozzles are provided along the circumferential direction on the side wall of the process chamber. 15. The method of claim 14,
Wherein the process gas nozzle has a discharge port provided in a ring shape on a side wall of the process chamber. 5. The method according to any one of claims 1 to 4,
The microwave applying unit includes:
A microwave power source for generating the microwave;
A waveguide for transmitting the microwave;
A coaxial transducer positioned in the inner space of the waveguide and converting a mode of the transmitted microwave; And
And an antenna member for transmitting the microwave from the coaxial transducer to the upper space.

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