KR101395906B1 - Thin film transistor and method for manufacturing thereof - Google Patents
Thin film transistor and method for manufacturing thereof Download PDFInfo
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- KR101395906B1 KR101395906B1 KR1020120153257A KR20120153257A KR101395906B1 KR 101395906 B1 KR101395906 B1 KR 101395906B1 KR 1020120153257 A KR1020120153257 A KR 1020120153257A KR 20120153257 A KR20120153257 A KR 20120153257A KR 101395906 B1 KR101395906 B1 KR 101395906B1
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- semiconductor layer
- oxide semiconductor
- gate electrode
- oxide
- gate
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- 238000000034 method Methods 0.000 title claims description 55
- 239000010409 thin film Substances 0.000 title abstract description 55
- 238000004519 manufacturing process Methods 0.000 title abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000012298 atmosphere Substances 0.000 claims description 23
- 239000011261 inert gas Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000012300 argon atmosphere Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 29
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000002243 precursor Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
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- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- FYWVTSQYJIPZLW-UHFFFAOYSA-K diacetyloxygallanyl acetate Chemical compound [Ga+3].CC([O-])=O.CC([O-])=O.CC([O-])=O FYWVTSQYJIPZLW-UHFFFAOYSA-K 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229940044658 gallium nitrate Drugs 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- -1 (AlNd) Inorganic materials 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
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- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- SQICIVBFTIHIQQ-UHFFFAOYSA-K diacetyloxyindiganyl acetate;hydrate Chemical compound O.CC(=O)O[In](OC(C)=O)OC(C)=O SQICIVBFTIHIQQ-UHFFFAOYSA-K 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
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- 238000002844 melting Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DJWUNCQRNNEAKC-UHFFFAOYSA-L zinc acetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O DJWUNCQRNNEAKC-UHFFFAOYSA-L 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- FOSPKRPCLFRZTR-UHFFFAOYSA-N zinc;dinitrate;hydrate Chemical compound O.[Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O FOSPKRPCLFRZTR-UHFFFAOYSA-N 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
The present invention relates to a thin film transistor and a method of manufacturing the same, and more particularly, to a thin film transistor using a thin oxide film formed through a low temperature process as a channel layer and a method of manufacturing the same.
Generally, oxide thin films are used as electronic devices in various fields such as display field, solar cell field, touch panel field, and the like because they can form a thin film having optical transparency while being optically transparent with a simple composition change .
In order to improve the economical efficiency of device fabrication, zinc oxide (ZnO), indium zinc oxide (IZO) and indium gallium zinc oxide (IGZO) Tin, titanium, and the like have been actively studied.
On the other hand, in the production of the conventional oxide thin film, expensive vacuum deposition equipment and target process have been widely used. Recently, however, a method for forming an oxide thin film through a solution process has been intensively studied for economical process.
In the method of forming an oxide thin film by the above-described solution process, the organic solvent contained in the solution is removed, and the reaction between the metallic material and oxygen is induced to form an oxide material having a specific function (conductor, semiconductor, And a heat treatment at a high temperature of 300 DEG C or more is required in order to remove impurities that bind to the oxidized material and deteriorate the functionality of the thin film.
However, the above-described heat treatment process at a high temperature has a problem of increasing the manufacturing cost of the oxide thin film. Further, when the melting point of the substrate (or substrate) on which the oxide thin film is formed is low, the substrate is deformed (e.g., plastic substrate, fiber substrate, etc.) .
In order to solve the above-mentioned problems, a process for manufacturing an oxide thin film at a low temperature has been studied. Examples of such studies include a thin oxide film formation method using a vacuum deposition method and a method of promoting oxide formation to lower the heat treatment temperature. However, in the case of the former, not only the process cost is increased due to the equipment cost for the deposition process, but also the nonuniformity and the performance degradation of the oxide thin film to be produced have been problematic. In the latter case, there is a limitation in lowering the heat treatment temperature Impurities can not be removed (at a level of 230 degrees), so that the performance of the oxide thin film deteriorates.
In order to solve this problem, there has been an attempt to anneal the oxide thin film by using a laser in manufacturing an oxide thin film using a solution process. US7208401, US2008 / 0057631, and the like. More specifically, all of the above-described conventional techniques disclose a technique of coating an oxide solution on a substrate and irradiating the laser in the atmosphere.
However, oxide thin films reported to have excellent properties when manufacturing thin films using such a method have not been reported yet. The present inventors have also made thin film transistors using oxide thin films as channel layers by the above-described conventional techniques. However, according to the conventional technique, characteristics that can be utilized for actual products can not be secured.
It is an object of the present invention to provide a thin film transistor in which an oxide thin film formed through a low temperature process is a channel layer and a method of manufacturing the same.
According to an aspect of the present invention, there is provided a semiconductor device comprising: a gate electrode formed by stacking at least two gate materials on a substrate; A gate insulating layer formed on the gate electrode; An oxide semiconductor layer formed on the gate insulating layer; And a source / drain electrode connected to at least a part of the oxide semiconductor layer, wherein a reflective structure having a higher ultraviolet reflectance than the material of the gate electrode is provided on the gate electrode.
The reflective structure may be a metal, a semiconductor layer, an insulating material or the like having particularly high ultraviolet reflectance. It is also possible that these materials are formed of one layer or two or more layers of the same property, or two or more layers having different properties may be laminated in plural. Preferably, the reflective structure may have a DBR (Distributed Bragg Reflector) structure in which two semiconductor material layers having different refractive indices are alternately stacked.
The oxide semiconductor layer is preferably formed by irradiating ultraviolet rays to the oxide solution coated in an inert gas atmosphere. The reflective structure of the present invention can provide the best conditions for more effectively absorbing ultraviolet light to the oxide semiconductor layer in the course of ultraviolet irradiation of the oxide semiconductor layer.
The inert gas atmosphere may be introduced into the coated oxide solution in an atmospheric state in which a vacuum process is not performed separately. The inert gas atmosphere may be a nitrogen atmosphere, an argon atmosphere, or a helium atmosphere.
A second aspect of the present invention is a semiconductor device comprising: an oxide semiconductor layer formed on a substrate; A gate insulating film and a gate electrode sequentially formed on the oxide semiconductor layer; And a source / drain electrode connected to the oxide semiconductor layer with a protective film interposed therebetween, the gate electrode having a structure including the oxide semiconductor layer, And a reflective structure for reflecting ultraviolet rays is formed on the substrate.
According to a third aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a gate electrode such that at least two gate materials are stacked on a substrate; Forming a gate insulating film on the entire surface of the substrate on which the gate electrode is formed; Forming an oxide semiconductor layer on the gate insulating layer; And forming a source / drain electrode to be connected to at least a part of the oxide semiconductor layer, wherein a reflective structure having a higher ultraviolet reflectance than the material of the gate electrode is formed on the gate electrode .
A fourth aspect of the present invention is a method for manufacturing a semiconductor device, comprising: forming an oxide semiconductor layer on a substrate; Forming a gate insulating layer and a gate electrode sequentially on the oxide semiconductor layer; And forming a source / drain electrode so as to be connected to the oxide semiconductor layer with a protective film interposed therebetween above the gate electrode, wherein, when viewed in plan, the oxide semiconductor layer And forming a reflective structure for reflecting ultraviolet light in a structure including the first electrode and the second electrode.
The inert gas atmosphere may allow the inert gas to flow into the coated oxide solution in a standby state in which a vacuum process is not performed separately.
The inert gas atmosphere may be a nitrogen atmosphere, an argon atmosphere, or a helium atmosphere.
Preferably, the wavelength of the ultraviolet light may be in the range of 150 nm to 260 nm, and the ultraviolet light irradiation retention time may be in the range of 1 minute to 240 minutes.
As described above, according to the thin film transistor of the present invention and the method of manufacturing the same, it is possible to manufacture a thin film transistor having a channel layer formed of an oxide thin film formed through a low-temperature process, in an economical method.
In addition, it is possible to maintain the uniformity of the oxide thin film by stabilizing the coated oxide solution by heat treatment.
Further, by irradiating ultraviolet rays in an inert gas atmosphere to induce oxide formation, it is possible to prevent deterioration of the oxide properties.
In addition, since expensive equipment is not required, a high-quality oxide thin film can be produced by an economical method.
1 is a cross-sectional view illustrating a structure of a thin film transistor according to a first embodiment of the present invention.
2A to 2E are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a first embodiment of the present invention.
3 is a cross-sectional view illustrating a structure of a thin film transistor according to a second embodiment of the present invention.
FIGS. 4A to 4G are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a second embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the following embodiments of the present invention may be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention.
(Embodiment 1)
1 is a cross-sectional view illustrating a structure of a thin film transistor according to a first embodiment of the present invention.
1, a thin film transistor (TFT) according to a first embodiment of the present invention includes a
Here, the
The
The
On the other hand, the
The
The
At this time, the inert gas is introduced into the coated oxide solution in the inert gas atmosphere (for example, a nitrogen atmosphere, an argon atmosphere, a helium atmosphere, or the like) in a standby state in which a vacuum process is not performed separately.
In addition, the ultraviolet ray irradiation may be performed to remove impurities of the formed oxide after metal-oxygen-metal (M-O-M) bonds are partially formed in the oxide solution.
Ultraviolet rays are more uniformly irradiated to the oxide coated on the channel region by the ultraviolet rays reflected by the oxide solution coated on the channel region by the reflective structure provided on the upper side of the
The source and drain
Hereinafter, a method of manufacturing a thin film transistor according to a first embodiment of the present invention will be described in detail.
2A to 2E are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a first embodiment of the present invention.
Referring to FIG. 2A, first, a gate material is stacked on a
At this time, the
Referring to Figure 2b, the
Referring to FIGS. 2C and 2D, an
Specifically, the
The oxide solution may include zinc chloride, zinc acetate, zinc acetate hydrate, zinc nitrate, zinc nitrate hydrate, or derivatives thereof. Zinc precursor; A gallium precursor including Gallium nitrate, Gallium nitrate hydrate, Gallium acetate, Gallium acetate hydrate or derivatives thereof; An indium precursor including indium chloride, indium acetate, indium acetate hydrate, indium nitrate or derivatives thereof; Tin precursors including tin chloride, tin acetate, tin nitrate, or derivatives thereof, and mixtures thereof. ≪ RTI ID = 0.0 > It goes without saying that other metal precursors such as aluminum precursors may be utilized.
The solvent for dissolving the precursors of the oxide solution may be used correspondingly to the precursors. For example, acetonitrile, 2-methoxyethanol, methanol ), DI water, or isopropylalcohol (IPA).
Mono-ethanolamine, acetic acid or acetylacetone may be used as an additive, but the present invention is not limited thereto.
On the other hand, the thickness of the
Particularly, one of the features of the present invention is a process for irradiating ultraviolet rays to the
In the case of irradiating ultraviolet rays under the condition of oxygen, ozone (O 3 ) is generated, thereby deteriorating the properties of the oxide. Therefore, in the method of manufacturing a thin film transistor according to the first embodiment of the present invention, irradiation with ultraviolet rays in an inert gas atmosphere has an effect of preventing degradation of the properties of the oxide.
Meanwhile, it is preferable that the inert gas atmosphere is a state in which an inert gas is introduced into the coated oxide solution in a standby state in which a vacuum process is not performed separately. In general, a vacuum process is a costly process, and it is effective not to introduce a vacuum process because the vacuum process is removed as much as possible in the production of the solution process oxide of the present invention.
The ultraviolet ray irradiation may be performed through an ultraviolet light source such as a high-pressure mercury lamp, but is not limited thereto.
The holding time of the ultraviolet ray irradiation may be about 1 minute to 240 minutes. If the duration of ultraviolet ray irradiation is too short, the above two steps can not proceed sufficiently and a thin film having excellent characteristics can not be formed. If the ultraviolet ray irradiation time exceeds 240 minutes, the oxide may be denatured or the substrate may be deformed Because. On the other hand, when the oxide thin film is used as the channel layer of the thin film transistor, that is, the
In addition, the temperature of the
Alternatively, before the ultraviolet ray irradiation, the oxide solution coated on the
On the other hand, the ultraviolet ray to be irradiated has a wavelength in an ultraviolet ray region and / or an ultraviolet ray region, specifically, about 150 nm to 260 nm. When the wavelength is shorter than 150 nm, there is a problem that the oxide is destroyed by ultraviolet rays. When the wavelength is longer than 260 nm, there is a problem that sufficient energy for oxide formation can not be supplied.
Referring to FIG. 2E, the source /
(Second Embodiment)
FIG. 3 is a cross-sectional view illustrating a structure of a thin film transistor according to a second embodiment of the present invention, which shows a thin film transistor having a top gate structure.
Referring to FIG. 3, a thin film transistor (TFT) according to a second embodiment of the present invention includes a
Here, the
The
The
The
The
Since the
The
The
The
The
The source and drain
Hereinafter, a method of manufacturing a thin film transistor according to a second embodiment of the present invention will be described in detail.
4A to 4F are cross-sectional views illustrating a method of manufacturing a thin film transistor according to a second embodiment of the present invention.
Referring to FIG. 4A, a
The
4B and 4C, a
That is, an
Since the process of forming the
Referring to Figure 4d, the entire upper surface of the
Referring to FIG. 4E, a
Referring to Figure 4f, the silicon oxide inorganic material on the entire top surface of the
Thereafter, the
Referring to FIG. 4G, the source /
Although the preferred embodiments of the thin film transistor and the method of manufacturing the same according to the present invention have been described above, the present invention is not limited thereto, and various modifications may be made within the scope of the claims, the description of the invention, And this also belongs to the present invention.
100: substrate, 110, 220: reflective structure
200: gate electrode, 300: gate insulating film,
400: an oxide semiconductor layer, 500 and 600: a source / drain electrode
Claims (14)
A gate insulating layer formed on the gate electrode;
An oxide semiconductor layer formed on the gate insulating layer; And
A source / drain electrode connected to at least a part of the oxide semiconductor layer,
Wherein a reflection structure having a higher ultraviolet reflectance than the material of the gate electrode is provided on the gate electrode.
Wherein the reflective structure is a metal, a semiconductor layer, or an insulating layer.
Wherein the reflective structure has a distributed Bragg reflector (DBR) structure in which two semiconductor material layers having different refractive indices are alternately stacked.
Wherein the oxide semiconductor layer is formed by irradiating ultraviolet rays to an oxide solution coated in an inert gas atmosphere.
A gate insulating film and a gate electrode sequentially formed on the oxide semiconductor layer; And
A source / drain electrode connected to the oxide semiconductor layer with a protective film interposed therebetween,
Wherein a reflective structure for reflecting ultraviolet rays is formed on a lower portion of the oxide semiconductor layer in a structure including the oxide semiconductor layer when viewed in a plan view.
Wherein the reflective structure is a metal, a semiconductor layer, or an insulating layer.
Wherein the reflective structure comprises a DBR (Distributed Bragg Reflector) structure in which two semiconductor material layers having different refractive indices are alternately stacked.
Forming a gate insulating film on the entire surface of the substrate on which the gate electrode is formed;
Forming an oxide semiconductor layer on the gate insulating layer; And
And forming a source / drain electrode to be connected to at least a part of the oxide semiconductor layer,
Wherein a reflection structure having a higher ultraviolet reflectance than the material of the gate electrode is formed on the gate electrode.
Forming a gate insulating layer and a gate electrode sequentially on the oxide semiconductor layer; And
Forming a source / drain electrode on the gate electrode so as to be connected to the oxide semiconductor layer with a protective film interposed therebetween,
Further comprising the step of forming a reflective structure for reflecting ultraviolet light in a structure including the oxide semiconductor layer when viewed in a plan view below the oxide semiconductor layer.
Wherein the reflective structure is a metal, a semiconductor layer, or an insulating layer.
Wherein the oxide semiconductor layer is formed by irradiating ultraviolet rays to the oxide solution coated in an inert gas atmosphere.
Wherein the reflective structure is formed of a distributed Bragg reflector (DBR) structure in which two semiconductor material layers having different refractive indices are alternately stacked.
Wherein the inert gas atmosphere causes the inert gas to flow into the coated oxide solution in an atmospheric state in which a vacuum process is not performed.
Wherein the inert gas atmosphere is a nitrogen atmosphere, an argon atmosphere, or a helium atmosphere.
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| JP2004087583A (en) * | 2002-08-23 | 2004-03-18 | Seiko Epson Corp | Semiconductor device, its manufacturing method and heat treatment method of thin film |
| JP2007123861A (en) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
| JP2010191107A (en) * | 2009-02-17 | 2010-09-02 | Videocon Global Ltd | Liquid crystal display device and method for manufacturing the same |
| KR20100120939A (en) * | 2009-05-07 | 2010-11-17 | 국민대학교산학협력단 | Method for fabricating thin film transistor using uv light |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004087583A (en) * | 2002-08-23 | 2004-03-18 | Seiko Epson Corp | Semiconductor device, its manufacturing method and heat treatment method of thin film |
| JP2007123861A (en) * | 2005-09-29 | 2007-05-17 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
| JP2010191107A (en) * | 2009-02-17 | 2010-09-02 | Videocon Global Ltd | Liquid crystal display device and method for manufacturing the same |
| KR20100120939A (en) * | 2009-05-07 | 2010-11-17 | 국민대학교산학협력단 | Method for fabricating thin film transistor using uv light |
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