KR101317632B1

KR101317632B1 - Nitride light emitting device and method of making the same

Info

Publication number: KR101317632B1
Application number: KR1020070037414A
Authority: KR
Inventors: 김선경; 조현경; 장준호
Original assignee: 엘지이노텍 주식회사; 엘지전자 주식회사
Priority date: 2007-04-17
Filing date: 2007-04-17
Publication date: 2013-10-10
Also published as: KR20080093556A

Abstract

The present invention relates to a nitride-based light emitting device and a method of manufacturing the same, and more particularly to a nitride-based light emitting device and a method for manufacturing the light emitting device that can improve the light extraction efficiency and reliability. The present invention provides a nitride-based light emitting device comprising: a semiconductor layer; Located on the semiconductor layer, preferably comprises a light extraction layer formed of a material having the same refractive index as the semiconductor layer or larger than the semiconductor layer.

Light emitting device, photonic crystal, extraction efficiency, GaN, LED.

Description

Nitride-based light emitting device and method of manufacturing the same {Nitride light emitting device and method of making the same}

1 is a cross-sectional view showing an example of a structure for light extraction efficiency of a light emitting device.

FIG. 2 is a graph showing the extraction efficiency according to the increase of the refractive index of the hemisphere of FIG.

3 is a cross-sectional view illustrating an embodiment of a horizontal light emitting device having a photonic crystal structure.

FIG. 4 is a graph showing light extraction efficiency according to photonic crystal depth in the structure of FIG. 3.

5 is a graph illustrating light extraction efficiency according to an etching depth when the thickness of a semiconductor layer is limited.

6 to 8 are diagrams showing a first embodiment of the present invention.

6 is a sectional view showing a first embodiment of the present invention.

7 is a cross-sectional view showing an example of a horizontal light emitting device according to the first embodiment of the present invention.

8 is a graph showing the light extraction efficiency according to the refractive index of the light extraction layer.

9 to 13 are cross-sectional views showing a second embodiment of the present invention.

9 is a cross-sectional view showing an example of the structure of a horizontal light emitting device according to the second embodiment.

10 is a cross-sectional view illustrating another example of a horizontal light emitting device structure according to the second embodiment.

11 is a graph showing transmittance according to an incident angle of a transparent conductive layer and a transparent metal layer.

12 is a graph showing the light extraction efficiency according to the thickness of the transparent conductive layer.

Fig. 13 is a sectional view showing a light emitting device according to the second embodiment.

14 is a sectional view showing a third embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

100, 200: substrate 110, 210: semiconductor layer

120, 230: light extraction layer 130: transparent conductive oxide

220: transparent conductive layer

The present invention relates to a nitride-based light emitting device and a method of manufacturing the same, and more particularly to a nitride-based light emitting device and a method for manufacturing the light emitting device that can improve the light extraction efficiency and reliability.

Light Emitting Diodes (LEDs) are well-known semiconductor light emitting devices that convert current into light.In 1962, red LEDs using GaAsP compound semiconductors were commercialized, along with GaP: N series green LEDs. It has been used as a light source for display images of electronic devices, including.

The wavelength of the light emitted by these LEDs depends on the semiconductor material used to fabricate the LED. This is because the wavelength of the emitted light depends on the band gap of the semiconductor material, which represents the energy difference between the valence band electrons and the conduction band electrons.

Gallium nitride semiconductors (GaN) have high thermal stability and wide bandgap (0.8 to 6.2 eV), and have attracted much attention in the field of high output electronic component development including LEDs.

One reason for this is that GaN can be combined with other elements (indium (In), aluminum (Al), etc.) to produce semiconductor layers that emit green, blue and white light.

Since the emission wavelength can be controlled in this manner, it can be tailored to the characteristics of the material according to the specific device characteristics. For example, GaN can be used to create a white LED that can replace the blue LEDs and incandescent lamps that are beneficial for optical recording.

Due to the advantages of these GaN-based materials, the GaN-based LED market is growing rapidly. Therefore, since commercial introduction in 1994, GaN-based optoelectronic device technology has rapidly developed.

In general, the total luminous efficiency of a semiconductor light emitting diode (LED) can be divided into internal quantum efficiency and external extraction efficiency.

The internal quantum efficiency is an amount related to the characteristics of the material constituting the LED device, and is determined by defects in the semiconductor material generated during the growth process and the efficiency of current injection.

On the other hand, the external extraction efficiency refers to the efficiency in which the light generated in the semiconductor escapes to the external medium to be observed. If no structural change is introduced, the external extraction efficiency is simply determined as the difference in refractive index between the semiconductor and the external medium.

As a result, the total luminous efficiency of the semiconductor LED can be expressed as the product of the internal quantum efficiency and the external extraction efficiency. Efforts to improve these two efficiencies at the same time are needed to develop a high efficiency semiconductor LED.

The technical problem to be achieved by the present invention is a nitride-based light emitting device that can improve the light extraction efficiency while preserving electrical characteristics in introducing a light extraction structure for improving the light extraction efficiency to gallium nitride (GaN) light emitting device And to provide a method for producing the same.

In order to achieve the above technical problem, the present invention is a nitride-based light emitting device, the semiconductor layer; Located on the semiconductor layer, preferably comprises a light extraction layer formed of a material having the same refractive index as the semiconductor layer or larger than the semiconductor layer.

As another aspect for achieving the above technical problem, the present invention, a method for manufacturing a nitride-based light emitting device, comprising the steps of forming a semiconductor layer; Forming a light extraction layer having the same refractive index as the semiconductor layer or having a larger refractive index than the semiconductor layer on the semiconductor layer; Etching the light extraction layer is preferably configured to include a step of forming a pattern.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

Like reference numerals denote like elements throughout the description of the drawings. In the drawings the dimensions of layers and regions are exaggerated for clarity. In addition, each embodiment described herein includes an embodiment of a complementary conductivity type.

It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between . If a part of a component, such as a surface, is expressed as 'inner', it will be understood that this means that it is farther from the outside of the device than other parts of the element.

Furthermore, relative terms such as "beneath" or "overlies" are used herein to refer to one layer or region relative to one layer or region and another layer or region with respect to the substrate or reference layer, as shown in the figures. Can be used to describe the relationship.

It will be understood that these terms are intended to include other directions of the device in addition to the direction depicted in the figures. Finally, the term 'directly' means that there is no element in between. As used herein, the term 'and / or' includes any and all combinations of one or more of the recorded related items.

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers, and / or regions, such elements, components, regions, layers, and / or regions It will be understood that it should not be limited by these terms.

These terms are only used to distinguish one element, component, region, layer or region from another region, layer or region. Thus, the first region, layer or region discussed below may be referred to as the second region, layer or region.

Embodiments of the present invention will be described with reference to a gallium nitride (GaN) based light emitting device formed on a nonconductive substrate such as, for example, a sapphire (Al ₂ O ₃ ) based substrate. However, the present invention is not limited to this structure.

Embodiments of the invention may use other substrates, including conductive substrates. Thus, combinations of AlGaInP diodes on GaP substrates, GaN diodes on SiC substrates, SiC diodes on SiC substrates, SiC diodes on sapphire substrates, and / or GaN, SiC, AlN, ZnO and / or nitride based diodes on other substrates may be included. have. Moreover, the present invention is not limited to the use of the diode region. Other forms of active area may also be used in accordance with some embodiments of the present invention.

The extraction efficiency of the semiconductor light emitting device (LED) is determined by the difference in refractive index between the semiconductor light emitting layer in which light is generated and the medium (air or epoxy) that finally observes the light. Since the semiconductor medium typically has a high refractive index (n> 2), the light extraction efficiency is usually only a few%.

For example, in the case of a blue light emitting device based on gallium nitride (n = 2.4), light extraction efficiency through the upper layer of the light emitting device is only about 9% when an external substance is assumed to be epoxy (n = 1.4). The rest of the light is trapped by the total reflection process inside the device, and is lost by an absorbing layer such as a quantum well layer.

In order to improve the extraction efficiency of the semiconductor light emitting device, the structure must be modified to extract the light that undergoes total reflection. The simplest of these structural modifications is to overlay a hemisphere made of a material with high refractive index on the upper layer of the light emitting device.

Since the angle of incidence is the angle between the light and the incident surface, the angle of incidence at each point of the hemisphere is always perpendicular. The transmission between two media with different refractive indices is highest when the angle of incidence is perpendicular, and the total reflection angle no longer exists for all directions.

In fact, in the case of a semiconductor light emitting device, hemispheres made of epoxy are covered, which contributes not only to surface protection but also to improving extraction efficiency.

A further advantage of this effect is the introduction of a hemisphere 3 with a similar refractive index to the semiconductor between the epoxy layer 1 and the semiconductor element 2, as in FIG. In this case, as shown in FIG. 2, the extraction efficiency gradually increases as the refractive index of the additionally introduced hemisphere approaches the refractive index of the semiconductor.

This is because the critical angle between the semiconductor element and the additional introduced hemisphere is increased. As an example of a transparent material having no absorption in the visible light region, TiO ₂ may be proposed. For example, assuming that a hemisphere made of this material is applied to a red light emitting device, it is theoretically possible to obtain an extraction efficiency improvement of about 3 times or more.

The introduction of hemispheres with high refractive indices is a simple and very effective method. However, in order to apply such a method, a transparent material having high refractive index and no absorption in the emission wavelength range of light must be found.

In addition, the operation of manufacturing a hemisphere having a size sufficient to cover the light emitting element, and attaching the hemisphere may be a challenge.

Another method of improving the external light extraction efficiency is to deform the side of the light emitting structure into an inverted pyramid shape. This is based on the principle that the light propagating sideways while being totally reflected in the light emitting device is reflected from the pyramid plane and comes out to the upper layer.

However, this method has a disadvantage in that the improvement effect decreases as the size of the device increases. This is due to the absorption loss inevitably accompanied by the light traveling sideways. Therefore, in order to obtain a high enhancement effect in the actual structure with absorption, it is important to go to the outside after a short path to light.

To this end, studies have been conducted to introduce a structure into the light emitting device that can alleviate the total reflection condition. Typically, a light emitting device structure is designed in the form of a resonator to drive output in a specific direction from the beginning, and a method of increasing a critical angle by arranging a hemispherical lens of several microns or more in an upper layer.

However, these methods have not been brought to practical use due to manufacturing difficulties. As another method, there is a method of increasing extraction efficiency through a scattering process by introducing a rough surface corresponding to the size of the wavelength of light to the light emitting device output unit.

In the method of forming the rough surface on the upper portion of the light emitting device, various chemical processes have been developed depending on the material of each light emitting device. When light meets a rough surface, some of the light may pass through even the incident angle corresponding to total reflection.

However, the transmission by one scattering is not so large, so the same scattering process must be repeated repeatedly in order to expect a high extraction effect. Therefore, when there is a constituent material having a high absorption in the light emitting device, the extraction efficiency improvement by the rough surface is not very effective.

In comparison, when a photonic crystal having a spatially periodic refractive index arrangement is introduced, the extraction efficiency can be improved relatively large. In addition, when the appropriate photonic crystal period is selected, the directivity of the light emitting device output can be adjusted. Since a meaningful viewing angle varies depending on the application field of the light emitting device, it is important to design a directionality suitable for each application.

Large-area photonic crystals can be used for holographic lithography, ultraviolet photolithography, nano-imprinted lithography, and the like.

Efforts to improve the light extraction efficiency of the light emitting device through the photonic crystal start from the study that the spontaneous emission rate can be controlled by using the photonic crystal.

Thereafter, it has been theoretically proved that the photonic crystal contributes to the extraction efficiency of the light emitting device by using the dispersion characteristic curve, and the process of the photonic crystal to the extraction efficiency can be summarized into two ways.

One is to extract light in the vertical direction by blocking the light movement in the planar direction by using the photonic band-gap effect. The other is a state density mode that is located outside the light cone in the dispersion curve. Combine and extract to the outside.

These two principles can be applied independently depending on the period of the photonic crystal. However, in order to define the optical band gap mirror effect or the state density of the dispersion curve well, it is possible to form a photonic crystal in a situation where a thin film having a thickness of about half wavelength has a high refractive index contrast up and down.

Furthermore, since the air hole of the photonic crystal penetrates the light emitting layer, it inevitably leads to a loss of the gain medium, and further reduction of the internal quantum efficiency due to surface non-emitting coupling is inevitable.

Since the optical bandgap mirror effect or the strong dispersion property is difficult to implement in a general light emitting device structure, it can be said to be applied only in a special case. In order to solve this problem, the photonic crystal should be fabricated only on the surface without including the active medium of the light emitting device.

In this case, strong dispersion characteristics cannot be utilized as in the case of introducing a photonic crystal into a thin film having a high refractive index contrast, but according to general diffraction theory, light corresponding to total reflection can be extracted to the outside in combination with a periodic structure.

At present, efforts have been actively made to improve the extraction efficiency by spatially separating the photonic crystal and the light emitting layer of the semiconductor layer without degrading the characteristics of the light emitting layer.

In the same way, there is an example in which the extraction efficiency is improved for the light emitting device structure adopting InGaAs quantum well, and the result of increasing the external light extraction efficiency by 1.5 times or more by using the photonic crystal formed on the glass substrate in the organic light emitting device has been reported. .

As mentioned above, a method of extracting light trapped by total reflection by introducing a periodic photonic crystal structure to the surface has been attempted. For example, it has been reported that the extraction efficiency is increased by forming a photonic crystal having a period of about 200 nm on the p-type GaN semiconductor surface.

In addition, there has been a study that reports a high extraction efficiency improvement effect using the optical band gap effect after fabricating the photonic crystal to the active medium region of the GaN series light emitting device, but the extraction efficiency is lowered as the input current increases . This is because, as pointed out above, when the photonic crystal is introduced by etching the light emitting layer, in particular, the current-voltage characteristic is degraded.

In summary, the principle of improving the external light extraction efficiency of the light emitting device is to reduce the total reflection condition by modifying the structure, to introduce a rough surface on the surface, and to form a photonic crystal in a thin film having a large refractive index contrast to the optical band. It can be summarized as a method using a gap effect, a method of separating the photonic crystal and the light emitting layer and extracting the light trapped by total reflection to the outside through a diffraction process.

Among these, considering the reality of the structure of the light emitting device and the increase in efficiency, it can be said that the method of improving the extraction efficiency by introducing a periodic photonic crystal structure on the surface of the light emitting device.

As shown in FIG. 3, the horizontal GaN series light emitting device has a structure grown on a sapphire (n = 1.76) substrate 10 having a relatively lower refractive index than GaN. Since the total thickness of the GaN semiconductor layer 20 reaches about 5 μm, it can be regarded as a waveguide structure in which various higher order modes exist. The upper layer of the GaN semiconductor layer 20 starts from the p-type GaN semiconductor layer 21, and below it, a multi-quantum well layer corresponding to the region of the light emitting layer 22 is positioned.

An n-type GaN semiconductor layer 23 is positioned below the light emitting layer 22, and a buffer layer 24 may be positioned between the n-type GaN semiconductor layer 23 and the substrate 10. In addition, the reflective film 50 may be formed on the opposite side of the substrate 10.

In the horizontal GaN series light emitting device, a transparent electrode layer 30 such as ITO is usually deposited on the p-type GaN semiconductor layer 21 to supply current evenly over the entire area. Therefore, when the photonic crystal 40 is introduced into the horizontal GaN series light emitting device, the maximum range that can be etched is the sum of the thickness of the transparent electrode layer 30 and the thickness of the p-type GaN semiconductor layer 21. In general, the thickness of the transparent electrode layer 30 and the p-type GaN semiconductor layer 21 is between 100 and 300 nm.

First, in order to examine the extraction efficiency changes according to the etching depth of the photonic crystal 40, looking at the results of computer simulation (3D-FDTD) calculation, as shown in FIG. have.

First, the extraction efficiency gradually increases in proportion to the etching depth of the photonic crystal 40, and then greatly increases again from the etching portion of the GaN semiconductor layer 20. Second, the extraction efficiency no longer increases for some depth of etching, but tends to be saturated.

Putting these two points together, in order to obtain the maximum extraction efficiency, it may be necessary to introduce the photonic crystal 40 having an etching depth greater than or equal to a region including the GaN semiconductor layer 20.

At this time, since the etch depth at the time when the extraction efficiency is saturated and the thickness of the general p-type GaN semiconductor layer 21 are almost the same, it is not necessary to etch the region of the light emitting layer 22 to reach the saturation value of the theoretical extraction efficiency. It is possible.

However, in the actual experiment, when the light output is irradiated with respect to the etching depth of the photonic crystal 40, as shown in FIG. 5, when the p-type GaN semiconductor layer 21 is etched more than a certain depth, the light output is rather reduced. This is found.

The reason why the light output is reduced even though the quantum well structure, which is the light emitting layer 22, is not yet exposed is that the resistance is increased due to the volume reduction of the p-type GaN semiconductor layer 21. Increasing resistance may be more problematic for applications requiring high output light emitting devices.

That is, the current structure of the light emitting device having a photonic crystal does not use the etching depth, the maximum extraction efficiency from the optical point of view due to the problem of resistance increase. Therefore, the problem to be solved is to develop a new structure that can apply the etch depth is the maximum extraction efficiency by the photonic crystal without causing the problem of resistance increase.

Looking at the graph containing the extraction efficiency change with respect to the etching depth derived through the computer simulation described above, one step for the new structure can be obtained. One of the peculiarities found in the graph is that when the etch depth of the photonic crystal 40 passes from the ITO transparent electrode layer 30 to the GaN semiconductor layer 20, the extraction efficiency is significantly increased.

This is because the refractive index (n = 1.8) of ITO is basically smaller than that of the GaN semiconductor layer 20. In other words, the introduction of the photonic crystal 40 in the region having a small refractive index does not greatly improve the extraction efficiency. This can be understood by recalling that the photonic crystal 40 serves to extract light causing the total reflection process.

The degree of extraction efficiency depends on how light can feel the photonic crystal 40 region. In general, when total reflection occurs, surface attenuation waves occur between two surfaces having different refractive indices. Surface attenuation waves exist along the surfaces of two interfaces, and their magnitude decreases exponentially with respect to the vertical direction of the interfaces.

For example, when only the ITO layer is etched, light corresponding to total reflection can recognize the photonic crystal 40 formed in the ITO transparent electrode layer 30 only by the size of the surface attenuation wave. Therefore, a great improvement in extraction efficiency cannot be expected.

In conclusion, in order to extract a greater amount of light through the photonic crystal 40, a strong interaction between the photonic crystal 40 and light is required, and physically, between the total reflection mode formed in the GaN-based light emitting device and the photonic crystal 40 structure The spatial overlap of is the main factor. That is, in order to disturb the surface attenuation wave generated during the total reflection process, it may be necessary to etch the GaN semiconductor layer 20 to form the photonic crystal 40.

In other words, the etching of the GaN semiconductor layer may be interpreted to mean that a material having a refractive index similar to or greater than that of the GaN semiconductor layer is etched. That is, when the photonic crystal 40 is formed after depositing a material having a similar refractive index on the p-type GaN semiconductor layer, a similar effect may be expected in terms of extraction efficiency without etching the p-type GaN semiconductor layer.

In addition, if the newly deposited material has a larger refractive index than GaN, it may exhibit better properties than the above-described photonic crystal effect. This is because the effect of the photonic crystal is basically dependent on the refractive index difference between the two materials constituting the structure.

Therefore, in introducing a light extraction structure for improving light extraction efficiency to the gallium nitride (GaN) light emitting device, instead of etching the gallium nitride semiconductor layer (usually p-GaN) of the uppermost layer, it is additionally introduced above the gallium nitride semiconductor layer By forming a light extraction structure such as a photonic-crystal in a material, it is possible to improve the light extraction efficiency while preserving the electrical properties.

Thus, an embodiment of forming the light extraction structure on the gallium nitride semiconductor layer is as follows.

&Lt; Embodiment 1 >

First, as shown in FIG. 6, in the state in which a gallium nitride (GaN) -based semiconductor layer 110 is formed on the substrate 100, the refractive index of the semiconductor layer 110 is similar to that of the semiconductor layer 110, or The light extraction layer 120 is formed using a larger material.

The light extraction layer 120 may form a specific pattern, and the specific pattern may form a photonic crystal having a periodic structure. Formation of such photonic crystals may be accomplished through etching or other patterning methods.

For the formation of the photonic crystal structure, both positive lithography forming the hole 121 and negative lithography forming the columnar structure can be applied.

That is, after the light extraction layer 120 is formed by depositing, the photonic crystal pattern may be formed by lithography and etching processes. On the contrary, the light extraction layer 120 is deposited after lithography on the semiconductor layer 110. Thereafter, a pattern may be formed through a lift off process.

When the periodic photonic crystal structure is located on the surface of the light emitting device, light trapped by total reflection can be extracted through a diffraction process, thereby improving light extraction efficiency. However, even if the light extraction layer 120 does not have a specific pattern, light extraction efficiency may be improved by forming a surface roughness.

In this case, the transparent electrode material may be formed in the hole 121 for forming the photonic crystal in the light extraction layer 120, and the transparent electrode material may be a transparent conductive oxide (TCO) 130. .

ITO (Indium-Tin-Oxide) may be used as the transparent conductive oxide 130, and other Indium-Zinc-Oxide (IZO), Aluminum-Zinc-Oxide (AZO), Magnesium-Zinc-Oxide (MZO), Alternatively, a material such as gallium-zinc-oxide (GZO) may be used.

When the semiconductor layer 110 is a gallium nitride layer, since the refractive index of gallium nitride is 2.4, the refractive index of the light extraction layer 120 may be approximately 2.4 or greater. The refractive index of the light extraction layer 120 may be slightly smaller than 2.4.

In addition, the light extraction layer 120 may use an oxide or nitride, in particular, SiN or TiO ₂ may be used.

7 illustrates a structure of a horizontal light emitting device having the light extraction layer 120, and the semiconductor layer 110 is sequentially formed on the sapphire substrate 100 having a refractive index of 1.78. ), The active layer 112, and the p-type semiconductor layer 113. In some cases, the n-type semiconductor layer 111 may be formed on the buffer layer 114.

At this time, the p-type semiconductor layer 113 adjacent to the light extraction layer 120 is not etched when the pattern of the light extraction layer 120 is formed, and the p-type semiconductor layer 113 is entirely stacked. The thickness can be maintained. The thickness of the p-type semiconductor layer 113 may be 30 to 500 nm. In addition, the thickness of the light extraction layer 120 may be 150 nm or more.

In FIG. 7, the pattern of the light extraction layer 120 is enlarged and represented. The pattern of the light extraction layer 120 is composed of a plurality of holes 121 to form a photonic crystal in the GaN semiconductor, the radius, depth, and period of the hole 121 is optimized for the semiconductor layer 110 Can be.

That is, when a period that is an interval between the holes 121 and 121 is a, the radius of the holes 121 may be 0.10a to 0.45a, and the depth of the holes 121 is 0.25λ / n. To 10λ / n. Where? Is the wavelength of light emitted and n is the refractive index of the medium on which the photonic crystal is formed, that is, the p-type semiconductor layer 113. In addition, the period a may be 200 nm to 5000 nm.

On the other hand, as described above, instead of forming the holes 121 in this manner, a photonic crystal structure can be formed even if a regular columnar structure is formed.

At this time, one side may be etched to expose the n-type semiconductor layer 111 so that the n-type electrode 140 is formed on the n-type semiconductor layer 111, and the light extraction layer 120 is formed. The p-type electrode 150 may be formed above the portion.

The thickness of the material forming the light extraction layer 120 can be freely determined. As such, the structure of forming the photonic crystal by depositing a material having a high refractive index may be applied to all light emitting device structures that emit red, green, and other colors. Application is possible.

In order to examine the effects of the present invention, as shown in FIG. 8, the variation of extraction efficiency according to the refractive index of the light extraction layer 120 was investigated with respect to the structure of the first embodiment.

In the graph of FIG. 8, the vertical axis represents a ratio of increasing light extraction efficiency relative to a general planar structure without introducing a light extraction structure.

Looking at the results, it can be seen that the light extraction efficiency increase ratio increases as the difference between the refractive index of the transparent conductive oxide 130 and the refractive index of the light extraction layer 120 increases. Here, the dotted line shows the light extraction efficiency when the uppermost layer of the semiconductor layer (in this case, the p-type semiconductor layer) is etched to form a photonic crystal.

In addition, when the refractive index of the light extraction layer 120 is about 2.6, the light extraction efficiency increases similar to that of etching the p-type GaN semiconductor layer. At this time, when the light extracting layer 120 or the photonic crystal is formed by introducing a material having a larger refractive index, the light extraction efficiency improvement effect starts to appear better than the above-described photonic crystal structure in which the p-type semiconductor layer is etched to form the photonic crystal.

Therefore, as described above, the light extraction layer 120 has a condition that the refractive index must be greater than or equal to the refractive index 2.4 of the semiconductor layer 20, and the thickness thereof may be at least 150 nm (λ / n) or more. have. In some cases, the thickness may be at least λ / 4n.

In addition, the material constituting the light extraction layer 120 should not have an absorption loss in the wavelength region of the light emitting layer of the light emitting device, and should have excellent physical bonding strength with the transparent conductive oxide 130.

As the material satisfying such a condition, as described above, silicon nitride (Si ₃ N ₄ ) having a refractive index of about 2.4 or titanium oxide (TiO ₂ ) having a refractive index of 3.0 is preferable.

&Lt; Embodiment 2 >

As shown in FIG. 9, a gallium nitride (GaN) based semiconductor layer 210 is formed on a sapphire substrate 200 having a refractive index of 1.78, and a transparent conductive layer 220 is formed on the semiconductor layer 210. . The transparent conductive layer 220 may be used as an electrode.

ITO (Indium-Tin-Oxide) may be used as the transparent conductive layer 220, and other indium-zinc-oxide (IZO), aluminum-incinc-xide (AZO), magnesium-zinc-oxide (MZO) Or a substance such as gallium-zinc-oxide (GZO) may be used.

The light extraction layer 230 is formed on the transparent conductive layer 220 by using a material having a refractive index similar to or greater than that of the semiconductor layer 210.

The light extraction layer 230 described above may form a specific pattern, and the specific pattern may form a photonic crystal having a periodic hole structure. Formation of such photonic crystals may be accomplished through etching or other patterning methods.

When the semiconductor layer 210 is a gallium nitride layer, since the refractive index of gallium nitride is 2.4, the refractive index of the light extraction layer 230 may be approximately 2.4 or greater. The refractive index of the light extraction layer 230 may be slightly smaller than 2.4. In addition, the light extraction layer 230 may be an oxide or nitride, in particular, SiN or TiO ₂ may be used, this may be the same as the first embodiment.

On the other hand, as shown in FIG. 10, instead of the transparent conductive layer 220, it is also possible to use a thin-metal transparent metal 240 such as the Ni layer 241 and the Au layer 242. . The transparent metal layer 240 is formed to be thin enough to allow light to pass through.

In addition, the transparent metal layer 240 may be formed using the alloy including Ni or Au.

The transparent metal layer 240 may be formed to a thickness of several nanometers (nm) of 10 nm or less. For example, the Ni layer 241 may be 2 nm or less, and the Au layer 242 may be 4 nm or less. It can be formed in thickness.

As described above, the transparent conductive layer 220 or the transparent metal layer 240 may be formed on the semiconductor layer 210. At this time, when forming the transparent conductive layer 220 which is an oxide metal, it is preferable to make the thickness sufficiently thin.

11 illustrates a case where ITO is used as an example of the transparent conductive layer 220 and a transmittance according to the incident angle of light of the transparent metal layer 240. As shown, in the case of using ITO, the transmittance decreases significantly when the incident angle is larger than approximately 45 degrees.

In addition, as shown in FIG. 12, it can be seen that as the thickness of ITO increases, the increase in light extraction efficiency by the light extraction layer 230 decreases gradually. Therefore, as described above, when the refractive index is smaller than the refractive index of the semiconductor layer 210, the thickness of the transparent conductive layer 220 is smaller than λ / 2n (λ is the wavelength of light, n is the refractive index of the transparent conductive layer) It is preferable.

Since the transparent conductive layer 220 may serve as an electrode, considering the voltage characteristic, it is more advantageous to have a thickness of λ / 16n to λ / 4n.

However, in the case of the transparent metal layer 240, as shown in Figure 10, the transmittance can be maintained at most angles, the thickness can be determined in consideration of the transmittance of the light emitted.

Fig. 13 shows a light emitting element having the above structure. In this case, the light emitting layer 212 is positioned on the n-type semiconductor layer 211, and the p-type semiconductor layer 213 is positioned on the light emitting layer 212. In this case, the n-type semiconductor layer 211 may be formed on the undoped low temperature buffer layer 214.

In addition, a current diffusion layer 215 having a thickness of several nanometers (nm) may be formed on the p-type semiconductor layer 213. The current spreading layer 215 may be formed of an undoped semiconductor layer.

In particular, the current diffusion layer 215 may be an In _x Ga ₁ _- _x N layer or an In _x Ga ₁ _- _x N / GaN superlattice layer. The current spreading layer 215 may play a role of smoothing current flow by improving carrier movement, and is also referred to as a current transport enhanced layer (CTEL) layer.

In this case, the thickness of the p-type semiconductor layer 213 may be 30 to 500 nm. In addition, the thickness of the light extraction layer 230 may be λ / 4n or more. N is the refractive index of the material of the light extraction layer 230.

Other parts that are not described may be the same as the first embodiment.

Third Embodiment

FIG. 14 illustrates an embodiment in which a light extraction layer 320 having a high refractive index is applied to a vertical light emitting device structure.

That is, such a semiconductor layer is formed on a semiconductor layer 310 including an n-type semiconductor layer 311 and a light emitting layer 312 and a p-type semiconductor layer 313 positioned on the n-type semiconductor layer 311. The light extraction layer 320 is formed using a material having a refractive index that is similar to or greater than that of 310.

The light extraction layer 320 may form a specific pattern, and the specific pattern may form a photonic crystal having a periodic structure. Formation of such photonic crystals may be accomplished through etching or other patterning methods.

For the formation of the photonic crystal structure, both positive lithography for forming a hole and negative lithography for forming a column can be applied, which is the same as in the first embodiment. Can be.

In this case, as illustrated, the semiconductor layer 310 may be positioned on the transparent electrode 330 and the reflective electrode 340 having ohmic characteristics. The transparent electrode 330 may be formed using a conductive oxide such as ITO, and the reflective electrode 340 may be formed of a metal such as Al or Ag.

In addition, the transparent electrode 330 and the reflective electrode 340 may be formed of a single layer reflective ohmic electrode (not shown).

On the other hand, the above-described structure may be located on a support layer 350 made of a metal or a semiconductor layer, the support layer 350 is light emitting in the process of removing the substrate on which the semiconductor layer 310 is grown to achieve a vertical structure The device structure can be supported.

In the structure of the vertical light emitting device, an n-type electrode electrically connected to the n-type semiconductor layer 313 is formed on the light extracting layer 320, so that current flows in the vertical direction when the light emitting device is driven. .

The above embodiment is an example for explaining the technical idea of the present invention in detail, and the present invention is not limited to the above embodiment, various modifications are possible, and various embodiments of the technical idea are all protected by the present invention. It belongs to the scope.

The present invention as described above has the following effects.

First, the present invention preserves the electrical characteristics of the light emitting device while introducing a photonic crystal for improving the light extraction efficiency to the light emitting device.

Second, the present invention can exhibit the same light extraction effect even for high current.

Third, the present invention can realize the same or better light extraction effect to form a photonic crystal by etching the GaN semiconductor layer.

Fourth, the present invention can extend the etching depth until the light extraction efficiency is saturated when forming the photonic crystal.

Claims

In the nitride-based light emitting device,

A semiconductor layer;

Located on the semiconductor layer, and includes a light extraction layer formed of a material having the same refractive index as the semiconductor layer or greater than the semiconductor layer,

The semiconductor layer and the light extraction layer is made of a different material, the light extraction layer comprises a plurality of holes, the plurality of holes nitride-based light emitting device in which a transparent conductive oxide is disposed.

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The nitride-based light emitting device according to claim 1, wherein the holes are formed regularly.

The nitride-based light emitting device of claim 1, further comprising a transparent conductive layer between the light extraction layer and the semiconductor layer.

The nitride-based light emitting device of claim 5, wherein the transparent conductive layer has a thickness of λ / 16n to λ / 2n (n is a refractive index of the transparent conductive layer, and λ is a wavelength of light emitted from the semiconductor layer).

The nitride-based light emitting device of claim 1, further comprising a transparent metal layer between the light extraction layer and the semiconductor layer.

The nitride-based light emitting device of claim 7, wherein the transparent metal layer is formed of at least one of Ni and Au, or an alloy containing Ni and Au.

The nitride-based light emitting device of claim 1, wherein the light extraction layer comprises an oxide or a nitride.

The nitride light emitting device of claim 1, wherein the light extraction layer has a refractive index of 2.4 or more.

The nitride-based light emitting device of claim 1, wherein the light extraction layer comprises TiO ₂ .

The semiconductor device according to claim 1,

an n-type semiconductor layer;

An active layer positioned on the n-type semiconductor layer;

A nitride-based light emitting device comprising a p- type semiconductor layer located on the active layer.

The nitride-based light emitting device according to claim 12, wherein the p-type semiconductor layer has a thickness of 30 nm to 500 nm.

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The nitride-based light emitting device according to claim 1, wherein the light extraction layer has a thickness of 150 nm or more.

The semiconductor device according to claim 1,

a p-type semiconductor layer;

An active layer on the p-type semiconductor layer;

A nitride-based light emitting device comprising an n-type semiconductor layer located on the active layer.

The nitride-based light emitting device of claim 1, wherein the semiconductor layer is disposed on a first electrode.

The method of claim 17, wherein the first electrode,

A reflective electrode;

A nitride-based light emitting device comprising an ohmic electrode disposed on the reflective electrode.

The nitride-based light emitting device according to claim 17, wherein the first electrode is disposed on a support layer made of a metal or a semiconductor.

In the method of manufacturing a nitride-based light emitting device,

Forming a semiconductor layer;

Forming a light extraction layer on the semiconductor layer, the light extraction layer comprising a material different from the semiconductor layer and having the same refractive index as that of the semiconductor layer or a larger refractive index than the semiconductor layer;

Etching the light extraction layer to form a hole;

Method of manufacturing a nitride-based light emitting device comprising the step of filling the hole with a transparent conductive oxide.

The method of claim 20, further comprising forming a transparent conductive layer after forming the semiconductor layer.

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