KR101308127B1 - Method of manufacturing light emitting didoes - Google Patents

Abstract

A method of manufacturing a light emitting diode is disclosed. The method forms compound semiconductor layers comprising a first conductive compound semiconductor layer, an active layer and a second conductive compound semiconductor layer on the base substrate, and forms a conductive support substrate on the compound semiconductor layers. After forming a scribing line on the base substrate, the base substrate is separated from the compound semiconductor layers by irradiating a laser between the base substrate and the compound semiconductor layer. Forming an electrode pad on the first conductive compound semiconductor layer exposed by the separation of the base substrate, and cutting the conductive support substrate along the scribing lines to separate the light emitting diode chips.

Description

Manufacturing method of light emitting diode {METHOD OF MANUFACTURING LIGHT EMITTING DIDOES}

1 is a cross-sectional view illustrating a method of manufacturing a light emitting diode using a conventional laser lift-off technique.

2A and 2B are cross-sectional views illustrating a method of manufacturing a light emitting diode using a laser lift off (LLO) method according to an embodiment of the present invention.

3A and 3B are cross-sectional views illustrating a method of manufacturing a light emitting diode using a laser lift-off method according to another exemplary embodiment of the present invention.

4A and 4B are cross-sectional views illustrating a method of manufacturing a light emitting diode using a laser lift-off method according to another exemplary embodiment of the present invention.

5 is a cross-sectional view for describing a method of manufacturing a light emitting diode using the compound semiconductor layer separated by the laser lift-off method of the present invention illustrated in FIGS. 2A, 2B and 3A, 3B.

6 is a cross-sectional view illustrating a method of manufacturing a light emitting diode using the compound semiconductor layer separated by the laser lift-off method of the present invention illustrated in FIGS. 4A and 4B.

<Description of the symbols for the main parts of the drawings>

11, 21, 31, 41: substrate

13: GaN layer

23, 33, 43: compound semiconductor layer

15: trench

25, 35, 45: back scribing line

27, 37, 47: auxiliary support substrate

49 temporary support substrate 51, 61 electrode pad

The present invention relates to a method of manufacturing a light emitting diode, and more particularly, to a method of manufacturing a light emitting diode capable of reducing cracks.

In general, a semiconductor using a group III nitride compound such as gallium nitride (GaN), aluminum nitride (AlN), or the like has excellent thermal stability and has a direct transition energy band structure. Such a group III nitride semiconductor can obtain a band gap of various sizes according to its composition, and can be manufactured to emit light of various wavelength bands from yellow to ultraviolet rays, and recently, materials for light emitting devices in the blue and ultraviolet region. As a lot of attention. In particular, blue and green light emitting devices using gallium nitride (GaN) have been used in various applications such as large-scale color flat panel displays, traffic lights, indoor lighting, high-density light sources, high resolution output systems and optical communication.

Although there are some technical difficulties in mass-producing a nitride semiconductor of the group III element, it is gradually improved. Among them, in particular, many improvements have been made in the process of overcoming the difficulty of finding a high thermal conductivity conductive substrate having the same lattice structure suitable for growing a high quality nitride based semiconductor layer.

Sapphire (Al ₂ O ₃ ) single crystals have very good thermal stability with no change of crystallization from cryogenic to ultra-high temperature, high mechanical stability comparable to diamond with Mohs scale of hardness of 9, acid and alkali Both have strong chemical stability and optical properties with high light transmittance, and have the same hexagonal lattice structure as the nitride semiconductor single crystal of group III element. Therefore, a method of growing a nitride semiconductor single crystal of a group III element by using a sapphire single crystal as a growth substrate and performing a process such as metal organic chemical vapor deposition (MOCVD) or molecular beam deposition (MBE) on the growth substrate is widely used. It is used.

However, since the sapphire single crystal is electrically insulator, the light emitting diode structure is limited, for example, to form a separate electrode layer or electrode surface. The electrode layer should have high transparency for luminous efficiency, and should have low bonding resistance and high thermal conductivity between the metal wire and the electrode layer or between the electrode layer and the semiconductor layer. However, it is difficult to develop materials or structures having high thermal conductivity while having high transparency and low junction resistance. Since the thermal conductivity of the sapphire single crystal itself is low, it is not good for dissipating heat generated in the light emitting diode to the outside. Since sapphire is a non-conductor, it is difficult to discharge static electricity introduced from the outside, so that defects caused by static electricity can easily occur. In addition, sapphire single crystals are difficult to process such as cutting and shaping due to their stable mechanical and chemical properties.

On the other hand, silicon carbide (SiC) substrates, which are electrically and thermally stable and considerably higher in thermal conductivity than sapphire substrates, have been proposed as the same type of conductive substrate capable of growing GaN into single crystals, but are difficult to manufacture and have high light absorption. Can not do it.

The disadvantages caused by using such a sapphire substrate could be overcome by suggesting a method of growing a semiconductor layer on the sapphire substrate and then removing or lifting off the sapphire substrate.

Techniques for removing sapphire substrates include physical and mechanical cutting and chemical etching. The technique of separating the sapphire substrate is a laser lift off (LLO) technique that separates the sapphire substrate and the GaN layer by illuminating a laser of a specific wavelength between the sapphire substrate and the GaN layer.

1 is a cross-sectional view illustrating a conventional laser lift off technique.

Referring to FIG. 1, a GaN layer 13 is formed on the sapphire substrate 11. The GaN layer 13 includes a first compound semiconductor layer 131, an active layer 132, and a second compound semiconductor layer 133 in detail. The GaN layer 13 is bonded to a secondary supporting substrate (not shown) prior to separating the sapphire substrate 31. In this case, the auxiliary support substrate may be a silicon wafer (Si wafer), a gallium arsenide wafer (GaAs wafer), or a metal plate, which is a conductive substrate having no thermally conductive defects, such as a sapphire substrate.

When a support substrate such as silicon crystal, gallium arsenide crystal or metal plate is simply bonded with the GaN layer 13, because the crystal structure of the two layers is different, non-uniform stress is generated at the bonding surface and the bonding surface is in a stress state. When irradiating a laser in such a state, since the area of the laser is limited, the sapphire substrate 11 of the portion irradiated with the laser is separated from the GaN layer 13, but the sapphire substrate 11 of the portion not irradiated with the laser is It is still bonded with the GaN layer 13. Therefore, a crack occurs in the bonding surface between the GaN layer 13 and the wafer (or the metal plate) in the stress state, and even the GaN layer 13 is destroyed.

To avoid this phenomenon, the trench 15 is formed by etching the GaN layer 13 to a predetermined size (e.g., the device size of the final fabricated LED product) before bonding the auxiliary support substrate. do. In the process of separating the sapphire substrate 11, cracks are inevitable, but since most of the cracks are induced in the trenches 15, cracks may be prevented in the GaN layer 13 portion used in the LED device. .

However, in this prior art, the surface of the GaN layer may be damaged in the process of etching the GaN layer and may cause grooves or bends. As a result, even though the effects of cracks can be reduced, the surface of the GaN layer is not flattened, which may worsen the light emission characteristics of the product.

Other prior art also fills the grooves on the surface of the GaN layer with other materials and bonds the auxiliary support substrates, which still suffers from inefficiencies and additional processes.

It is an object of the present invention to provide a method of manufacturing a light emitting diode using a laser lift-off method that can reduce the effects of cracks that may occur in the compound semiconductor layer while separating the sapphire substrate with a laser without etching the compound semiconductor layer.

In the method of manufacturing a light emitting diode according to an embodiment of the present invention, the method may further include forming compound semiconductor layers including a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer on a base substrate. Forming a conductive support substrate on the substrate, forming a scribing line on the substrate, and separating the substrate from the compound semiconductor layers by irradiating a laser between the substrate and the compound semiconductor layer It includes.

According to an embodiment, the method may further include grinding and thinning the base substrate before forming a scribing line on the base substrate. In addition, the scribing line is formed by at least one of dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, dicing using saw blade, and laser scribing using laser. Can be.

In some embodiments, the conductive support substrate may be formed of silicon (Si), a silicon-based compound, aluminum (Al), an aluminum-based alloy or a solid solution, copper (Cu), a copper-based alloy or a solid solution having excellent electrical and thermal conductivity. , Silver (Ag), may be composed of at least one material of a silver-based alloy or a solid solution.

In another embodiment, a method of manufacturing a light emitting diode includes forming compound semiconductor layers including a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer on a base substrate. Forming a conductive support substrate on the substrate, forming a temporary support substrate on the conductive support substrate, forming a scribing line through the at least a compound semiconductor layer from the base substrate, the base substrate and the compound semiconductor Irradiating a laser between the layers to separate the base substrate from the compound semiconductor layers.

In some embodiments, the forming of the scribing line may include forming the scribing line to pass through the compound semiconductor layer and the conductive support substrate to the temporary support substrate. The method may further include grinding the base substrate to make it thin before forming a scribing line on the base substrate. In addition, the scribing line is formed by at least one of dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, dicing using saw blade, and laser scribing using laser. Can be. According to an embodiment, the conductive support substrate may be formed of silicon (Si), silicon-based compound, aluminum (Al), aluminum-based alloy or solid solution, copper (Cu), copper-based alloy or the like having excellent electrical and thermal conductivity. It may be composed of at least one of a solid solution, silver (Ag), a silver-based alloy or a solid solution. The temporary support substrate may be made of at least one material of silicon, a silicon-based compound, or a polymer film.

Another light emitting diode manufacturing method according to an embodiment of the present invention, forming a compound semiconductor layer comprising a first conductive compound semiconductor layer, an active layer and a second conductive compound semiconductor layer on the base substrate, the compound Forming a conductive support substrate on the semiconductor layers, forming a scribing line on the base substrate, irradiating a laser between the base substrate and the compound semiconductor layer to remove the base substrate from the compound semiconductor layers. Separating, forming an electrode pad on the first conductive compound semiconductor layer exposed by the separation of the base substrate, and cutting the conductive support substrate along the scribing lines to separate the individual light emitting diode chips. It includes a step.

According to an embodiment, the method may further include grinding and thinning the base substrate before forming a scribing line on the base substrate. In addition, the scribing line is formed by at least one of dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, dicing using saw blade, and laser scribing using laser. Can be.

According to an embodiment, the conductive support substrate may be formed of silicon (Si), silicon-based compound, aluminum (Al), aluminum-based alloy or solid solution, copper (Cu), copper-based alloy or the like having excellent electrical and thermal conductivity. It may be composed of at least one of a solid solution, silver (Ag), a silver-based alloy or a solid solution.

According to another aspect of the present invention, there is provided a light emitting diode manufacturing method, comprising: forming compound semiconductor layers including a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer on a base substrate; Forming a conductive support substrate on the substrate, forming a temporary support substrate on the conductive support substrate, forming a scribing line through at least the compound semiconductor layer from the base substrate, the base substrate and the compound Irradiating a laser between the semiconductor layers to separate the base substrate from the compound semiconductor layers, forming electrode pads on the first conductive compound semiconductor layer exposed due to separation of the base substrate, and The conductive support substrate is cut along the scribe lines and divided into individual LED chips. And a step of.

In some embodiments, the forming of the scribing line may include forming the scribing line to pass through the compound semiconductor layer and the conductive support substrate to the temporary support substrate. The method may further include grinding the base substrate to make it thin before forming a scribing line on the base substrate. The scribing line may be formed by at least one of dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, dicing using saw blade, and laser scribing using laser. have.

The conductive support substrate may be silicon (Si), silicon-based compound, aluminum (Al), aluminum-based alloy or solid solution, copper (Cu), copper-based alloy or solid solution, silver (Ag) having excellent electrical and thermal conductivity. It may be made of at least one material of a silver-based alloy or a solid solution, and the temporary support substrate may be made of at least one material of silicon, a silicon-based compound, or a polymer film.

With respect to the embodiments of the present invention disclosed in the text, specific structural to functional descriptions are merely illustrated for the purpose of describing embodiments of the present invention, embodiments of the present invention may be implemented in various forms and It should not be construed as limited to the embodiments described in.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Similar reference numerals have been used for the components in describing each drawing.

The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings and redundant explanations for the same constituent elements are omitted.

2A and 2B are cross-sectional views illustrating a method of manufacturing a light emitting diode using a laser lift off (LLO) method according to an embodiment of the present invention.

Referring to FIG. 2A, GaN-based compound semiconductor layers 23 are sequentially formed on the sapphire substrate 21. The compound semiconductor layer 23 may be composed of a first conductivity type semiconductor layer (eg n-type) 231, an active layer 232, a second conductivity type semiconductor layer (eg p-type) 233, or the like. have. A buffer layer may be further interposed between the first conductive semiconductor layer 231 and the sapphire substrate 21.

The conductive support substrate 27 is bonded on the compound semiconductor layer 23. A bonding layer may be further interposed to assist bonding between the conductive support substrate 27 and the compound semiconductor layer 23. A reflective layer may be further interposed between the conductive support substrate 27 and the compound semiconductor layer 23. The conductive support substrate 27 is silicon (Si), a silicon-based compound having excellent electrical and thermal conductivity, but aluminum (Al), aluminum-based alloy or solid solution, copper (Cu), copper-based alloy or solid solution, It may be composed of a metal material such as silver (Ag), silver-based alloy or solid solution.

Like other semiconductor devices, light emitting diodes are not manufactured individually, but are cut into device sizes after growing compound semiconductor layers on a wide sapphire substrate. In general, a scribing line is formed in advance in the boundary of the device for this cutting process.

A bottom scribing line 25 is formed on the bottom surface of the sapphire substrate 21 to cut the compound semiconductor layer 23 to the size of an element. The back scribing line 25 is dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, and dicing using metal saw blade ( dicing), laser scribing using a laser, or the like.

Although the conductive support substrate 27 may be bonded after the back scribing line 25 is formed, in some embodiments, the back scribing line 25 may be bonded after the conductive support substrate 27 is bonded. ) May be formed. In any case, after the bonding of the conductive support substrate 27 and the formation of the back side scribing line 25, the laser is irradiated to separate the sapphire substrate 21.

Referring to FIG. 2B, a laser is irradiated between the sapphire substrate 21 and the compound semiconductor layer 23, and the sapphire substrate 21 at the portion irradiated with the laser is separated from the compound semiconductor layer 23. In this case, when there is a buffer layer, the sapphire substrate 21 may be separated while the buffer layer is heated and decomposed by a laser.

In this case, the laser is preferably irradiated around the part to be made of the element so that the edge of the laser beam can be placed on the back scribing line 25. Cracks may occur due to the stress and thermal expansion coefficient difference between the sapphire substrate 21 and the region of the compound semiconductor layer 23 already separated and the region of the compound semiconductor layer 23 not yet separated. However, since cracks are induced into the grooves of the back scribing line 25, most of the cracks occur in the portion where the back scribing line 25 is formed. On the other hand, crack generation is suppressed in the region to be manufactured by the device.

In addition, when the laser lift-off is performed in such a process, it is not necessary to etch the trench in the compound semiconductor layer, thereby avoiding damage to the surface of the compound semiconductor layer.

3A and 3B are cross-sectional views illustrating a method of manufacturing a light emitting diode using a laser lift-off method according to another exemplary embodiment of the present invention.

Referring to FIG. 3A, the compound semiconductor layer 33 may include a first conductive semiconductor layer (for example, n-type) 331, an active layer 332, and a second conductive semiconductor layer (for example, p-type) 333. ) And the like. A buffer layer may be further interposed between the first conductive semiconductor layer 331 and the sapphire substrate 31.

The conductive support substrate 37 is bonded on the compound semiconductor layer 33. A bonding layer may be further interposed to assist bonding between the conductive support substrate 37 and the compound semiconductor layer 33. A reflective layer may be further interposed between the conductive support substrate 31 and the compound semiconductor layer 33. The conductive support substrate 37 may be made of silicon, a silicon-based compound having excellent electrical and thermal conductivity, or a metal such as aluminum, aluminum alloy or solid solution, copper, copper alloy or solid solution, silver, silver alloy or solid solution. have.

Instead of just deeply forming the scribing line 35 on the sapphire substrate 31 that is relatively thicker than the compound semiconductor layer 33, first, the back surface of the sapphire substrate 31 is polished by mechanical and chemical means to make it thin. .

After the sapphire substrate 31 is sufficiently polished, a back scribing line 35 is formed on the lower surface of the polished sapphire substrate 31 to cut the compound semiconductor layer 33 to the size of an element. Since the thickness of the sapphire substrate 31 is thinner than that of FIG. 2A, the back scribing line 35 may be formed deep enough to be close to the compound semiconductor layer 33.

The back scribing line 35 may be formed using dry etching, wet etching, diamond tip scribing, dicing, laser scribing, or the like as in FIG. 2A.

After the sapphire substrate 31 is polished and the back side scribing line 35 is formed, the conductive support substrate 37 may be bonded. In some embodiments, the conductive support substrate 37 may be bonded. Afterwards, the sapphire substrate 31 may be polished to form the back scribing line 35. In either case, the separation of the sapphire substrate 31 takes place after the bonding of the conductive support substrate 37 and the formation of the back side scribing line 35.

According to an embodiment, the back scribing line 35 may completely pass through the sapphire substrate 31. In this case, it may be preferable to form the back scribing line 35 after the conductive support substrate 37 is bonded.

Referring to FIG. 3B, a laser is irradiated between the sapphire substrate 31 and the compound semiconductor layer 33, and the sapphire substrate 31 at the portion irradiated with the laser is separated from the compound semiconductor layer 33. In this case, the buffer layer may be decomposed by heating to a high temperature by a laser, and may be separated together with the sapphire substrate 31.

In this case, the laser is preferably irradiated around the part to be made of the element so that the edge of the laser beam can be placed on the back scribing line 35. Cracks may occur due to a difference in stress and thermal expansion coefficient between the sapphire substrate 31 and the region of the compound semiconductor layer 33 already separated and the region of the compound semiconductor layer 33 not yet separated. Similarly, cracks are directed to the grooves of the back scribing line 35, so most of the cracks occur at the portion where the back scribing line 35 is formed. On the other hand, crack generation is suppressed in the inner region to be manufactured by the device.

In addition, when laser lift-off is performed in this process, it is not necessary to etch the trench in the compound semiconductor layer, thereby avoiding damage to the surface of the compound semiconductor layers.

4A and 4B are cross-sectional views illustrating a laser lift-off method according to another exemplary embodiment of the present invention.

Referring to FIG. 4A, the compound semiconductor layer 43 includes a first conductive semiconductor layer (for example, n-type) 431, an active layer 432, and a second conductive semiconductor layer (for example, p-type) 433. ) And the like. A buffer layer may be further interposed between the first conductive semiconductor layer 431 and the sapphire substrate 41.

The conductive support substrate 47 is bonded on the compound semiconductor layer 43. A bonding layer may be interposed to assist bonding between the conductive support substrate 47 and the compound semiconductor layer 43. In addition, a reflective layer may be further interposed between the conductive support substrate 47 and the compound semiconductor layer 43.

Since the sapphire substrate 41 is relatively thick as compared with the compound semiconductor layer 43, first, the rear surface of the sapphire substrate 41 is polished by mechanical and chemical means to make it thin.

After the sapphire substrate 41 is polished, the conductive support substrate 47 may be bonded. However, in some embodiments, the sapphire substrate 41 may be polished after the conductive support substrate 47 is bonded. It may be.

Next, a temporary support substrate 49 is bonded or formed on the conductive support substrate 47. The temporary support substrate 49 may be a semiconductor material film or a polymer film made of silicon or a silicon compound, and it is sufficient to be able to support the device during the subsequent manufacturing process, and after the sapphire substrate 41 is separated, It is a material that can be removed.

After the polishing of the sapphire substrate 41 and the bonding of the conductive support substrate 47 and the temporary support substrate 49 are completed, the compound semiconductor layer 43 is placed on the bottom surface of the polished sapphire substrate 41. A back scribing line 45 is formed for cutting with a chip. In this case, the back scribing line 45 may penetrate not only the sapphire substrate but also the compound semiconductor layer 43, and in some embodiments, may penetrate the conductive support substrate 47.

The back scribing line 45 may be formed using dry etching, wet etching, diamond tip scribing, dicing, laser scribing, or the like as in FIG. 2A.

Referring to FIG. 4B, a laser is irradiated between the sapphire substrate 41 and the compound semiconductor layer 43, and the sapphire substrate 41 at the portion irradiated with the laser is separated from the compound semiconductor layer 43. In this case, the buffer layer is heated by a laser to be decomposed at a high temperature, and the sapphire substrate 41 may be separated.

In this case, the laser is preferably irradiated around the part to be made of the element so that the edge of the laser beam can be placed on the back scribing line 45. In the region of the compound semiconductor layer 43 that is already separated from the sapphire substrate 41 and the region of the compound semiconductor layer 43 that is not yet separated, cracks may occur because of stress and thermal expansion coefficients. However, since the groove of the rear scribing line 45 penetrates the sapphire substrate 41, no crack is generated, or even if the crack occurs, it is generated near the rear scribing line 45. On the other hand, crack generation is greatly suppressed in the inner region to be manufactured by the device.

5 is a cross-sectional view for describing a method of manufacturing a light emitting diode using the compound semiconductor layer separated by the laser lift-off method of the present invention illustrated in FIGS. 2A, 2B and 3A, 3B.

Referring to FIG. 5, after the sapphire substrate 21 is separated by laser lift-off, the first conductive compound semiconductor layer 231 of the compound semiconductor layer 23 is exposed, and the exposed first conductive layer is exposed. The electrode pad 51 is formed on the type compound semiconductor layer 231.

The light emitting diode chip is then manufactured by cutting the conductive support substrate 27 into element sizes.

6 is a cross-sectional view illustrating a method of manufacturing a light emitting diode using the compound semiconductor layer separated by the laser lift-off method of the present invention illustrated in FIGS. 4A and 4B.

Referring to FIG. 6, unlike FIG. 5, both the compound semiconductor layer 43 and the conductive support substrate 47 are already separated by the back scribing line 45, and are supported by the temporary support substrate 49. It is in a state. Since the sapphire substrate 41 is separated through the laser lift-off, the first conductive compound semiconductor layer 431 of the compound semiconductor layer 43 is exposed, and the exposed first conductive compound semiconductor layer 431 is exposed. The electrode pad 61 is formed in the same. Subsequently, the light emitting diode chip is manufactured by removing the temporary support substrate by means of dry etching, wet etching, and chemical-mechanical polishing (CMP).

Up to now, the case where the material constituting the semiconductor layer of the light emitting diode has been described based on the GaN series, but the present invention is not limited to the case where the semiconductor layer is GaN series. The present invention can be easily applied by those skilled in the art when the semiconductor layer uses a semiconductor material having a large band gap, such as a group III nitride series or a III-V nitride series.

In addition, although the case where the semiconductor layer is grown using the sapphire substrate has been described so far, the present invention is not limited to the case where the base substrate is sapphire. The present invention can be easily applied by those skilled in the art, regardless of the type of the base substrate, if the base substrate is separated after the semiconductor layer is grown on the base substrate.

The laser lift-off method and the light emitting diode manufacturing method according to an embodiment of the present invention do not damage the surface of the compound semiconductor layer and can greatly reduce cracks in the region of the device, thereby greatly improving the yield and quality of the light emitting diode.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims. It will be possible.

Claims (10)

Forming compound semiconductor layers including a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer on the base substrate; Forming a conductive support substrate on the compound semiconductor layers; Forming a scribing line on the base substrate; And Irradiating a laser between the base substrate and the compound semiconductor layer to separate the base substrate from the compound semiconductor layers. The method according to claim 1, And grinding the base substrate to make it thin before forming a scribing line on the base substrate. The method according to claim 1, The scribing line is formed by at least one of dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, dicing using saw blade, and laser scribing using laser. A light emitting diode manufacturing method characterized by the above-mentioned. The method according to claim 1, The conductive support substrate may be formed of silicon (Si), silicon-based compound, aluminum (Al), aluminum-based alloy or solid solution, copper (Cu), copper-based alloy or solid solution, silver (Ag), silver-based alloy or solid solution. Method for manufacturing a light emitting diode, characterized in that composed of at least one material. Forming compound semiconductor layers including a first conductive compound semiconductor layer, an active layer, and a second conductive compound semiconductor layer on the base substrate; Forming a conductive support substrate on the compound semiconductor layers; Forming a temporary support substrate on the conductive support substrate; Forming a scribing line through at least the compound semiconductor layer from the base substrate; And Irradiating a laser between the base substrate and the compound semiconductor layer to separate the base substrate from the compound semiconductor layers. The method of claim 5, The forming of the scribing line may include forming the scribing line to pass through the compound semiconductor layer and the conductive support substrate to the temporary support substrate. . The method of claim 5, And grinding the base substrate to make it thin before forming a scribing line on the base substrate. The method of claim 5, The scribing line is formed by at least one of dry etching using plasma, wet etching using chemical solution, tip scribing using diamond, dicing using saw blade, and laser scribing using laser. A light emitting diode manufacturing method characterized by the above-mentioned. The method of claim 5, The conductive support substrate may be formed of silicon (Si), silicon-based compound, aluminum (Al), aluminum-based alloy or solid solution, copper (Cu), copper-based alloy or solid solution, silver (Ag), silver-based alloy or solid solution. Method for manufacturing a light emitting diode, characterized in that composed of at least one material. The method of claim 5, The temporary supporting substrate is a light emitting diode manufacturing method, characterized in that made of at least one material of silicon, a silicon-based compound or a polymer film.

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