KR101293526B1 - Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same - Google Patents
Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same Download PDFInfo
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- KR101293526B1 KR101293526B1 KR1020110008613A KR20110008613A KR101293526B1 KR 101293526 B1 KR101293526 B1 KR 101293526B1 KR 1020110008613 A KR1020110008613 A KR 1020110008613A KR 20110008613 A KR20110008613 A KR 20110008613A KR 101293526 B1 KR101293526 B1 KR 101293526B1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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Abstract
(Problem) The present invention provides a quartz glass crucible for raising a silicon single crystal, which can stably suppress the surface vibration of a silicon melt filled in the inside, and a long life.
(Solution means) A quartz glass crucible for pulling a silicon single crystal having a main wall portion, a curved portion, and a bottom portion, wherein the quartz glass crucible has a plurality of micro recesses in a specific region of the inner wall portion of the main wall portion. And a plurality of bubbles in a position below the micro recessed portion.
Description
TECHNICAL FIELD This invention relates to a quartz glass crucible and its manufacturing method. Specifically, It is related with the quartz glass crucible for pulling a silicon single crystal, and its manufacturing method.
Generally, the Czochralski method (CZ method) is widely used as a method for producing a silicon single crystal for semiconductor production. 1 and 2, this CZ method first immerses the single
In the quartz glass crucible used for pulling up such a silicon single crystal, as shown in FIG. 1, the
When such a water surface vibration occurs, the
Patent Document 1 discloses a technique for adjusting the bubble content of the crucible inner circumferential surface layer near the water surface at the start of pulling up in a certain range in order to suppress the water surface vibration of the silicon melt filled in the quartz glass crucible. This is because the surface vibration of the melt of the silicon melt at the start of the pulling of the silicon is affected by the bubble content of the inner surface layer of the crucible near the surface of the melt.
As an example, when a large amount of bubbles are contained in a quartz glass crucible, as the reaction of SiO 2 (solid) → Si (liquid) + 2O described above proceeds, the quartz glass is dissolved to form an open bubble as shown in FIG. 4. 201 appears. This
An object of the present invention is to provide a quartz glass crucible capable of stably suppressing the surface vibration of the silicon melt filled in the inside thereof, and to provide a long-life silicon single crystal impression and a method of manufacturing the same.
In order to achieve the above object, the present invention has the following structure.
(1) A quartz glass crucible for pulling a silicon single crystal having a circumferential wall portion, a curved portion and a bottom portion, and formed of two layers, an outer layer of a natural quartz glass layer and an inner layer of a synthetic quartz glass layer. A plurality of micro recesses are provided in a specific region of the inner wall of the circumferential wall, and a plurality of bubbles are provided below the micro recesses.
(2) The said specific area | region is a quartz glass crucible for silicon single crystal impressions as described in said (1) which is measured from the said bottom part, when crucible height is set to H, and is in the range of 0.50H-0.99H.
(3) Said specific area | region is said (1) or (2) provided with at least 1 said micro recessed part for every annular inner surface part partitioned by the space | interval of the range of 0.1-5.0 mm in the crucible height direction. Quartz glass crucible for silicon single crystal impression described in
(4) The quartz glass crucible for pulling up the silicon single crystal according to the above (1), (2) or (3), wherein the average diameter of the micro recess is 1 to 500 µm.
(5) The quartz glass crucible for pulling a silicon single crystal according to any one of the above (1) to (4), wherein an average depth of the micro recess is 0.05 to 50% of the crucible thickness in the main wall portion.
(6) The quartz glass crucible for pulling a silicon single crystal according to any one of (1) to (5) above, wherein the average diameter of the bubbles is in the range of 10 to 100 µm, and the density is in the range of 30 to 300 pieces / cc.
(7) The area | region provided with the some bubble in the said synthetic quartz glass layer is the silicon single crystal pulling of any one of said (1)-(6) which is an area | region of 0.5-30% of the crucible thickness in the said main wall part. Quartz glass crucible for
(8) A method for producing a silicon single crystal pulling quartz glass crucible having a main wall portion, a curved portion and a bottom portion and formed of two layers of an outer layer of a natural quartz glass layer and an inner layer of a synthetic quartz glass layer, wherein the method is a natural quartz powder. (I) forming an outer layer, forming an inner layer made of synthetic quartz powder on the inner surface of the outer layer, and causing arc discharge to melt from the inner surface side of the inner layer to form a main wall portion, a curved portion and a bottom portion. And a step of forming a quartz glass crucible having the inner layer forming step, wherein a foamed synthetic quartz powder is placed in an inner layer portion located below a plurality of micro recesses to be formed in a specific region of the inner surface of the main wall portion. It includes using, and after the said quartz glass crucible formation process, the micro recessed part which forms a some micro recessed part in the said specific area | region Method for producing a quartz glass crucible for silicon single crystal pulling, characterized in that it comprises an additional step.
(9) The method for producing a quartz glass crucible for pulling a silicon single crystal according to the above (8), wherein the minute recess is formed by physical grinding using a carbon dioxide laser, a diamond tool, or the like.
According to the present invention, by providing a plurality of micro recesses in a specific region of the inner wall of the circumferential wall portion, and by providing a plurality of bubbles below the micro recesses, the surface of the melt of the silicon melt filled therein can be stably suppressed. In addition, it is possible to provide a quartz glass crucible for raising a silicon single crystal of a long life and a manufacturing method thereof.
1 is a schematic cross-sectional view for explaining a method for producing a silicon single crystal.
2 is a plan view of a typical silicon ingot produced by the pulling method.
Fig. 3 (a) is a schematic cross-sectional view for explaining the melt surface vibration of the silicon melt, and Fig. 3 (b) is a schematic plan view showing the melt surface vibration of the silicon melt.
It is typical sectional drawing of the crucible main wall part which shows the bubble contained in the conventional quartz glass crucible.
It is a perspective view of the cross section which shows the quartz glass crucible for pulling a silicon single crystal which concerns on this invention.
It is typical sectional drawing which shows the manufacturing method of a quartz glass crucible.
7 is a schematic cross-sectional view partially enlarged of an interface between a quartz glass crucible and a silicon melt.
It is a perspective view of the cross section which shows the formation pattern of a micro recess.
(Mode for carrying out the invention)
Next, embodiment of the quartz glass crucible for pulling a silicon single crystal of this invention, and its manufacturing method is demonstrated, referring drawings. As shown in FIG. 5 as an example, the quartz glass crucible 1 for pulling a silicon single crystal according to the present invention has a
Since the bubble 7 is exposed under a high temperature temperature condition for a long time until it opens, the bubble is saturated and there is no fear of bursting immediately below the inner wall portion of the circumferential wall just before the bubble is opened. Since there is no possibility that the quartz pieces may be mixed in the silicon melt, the yield of the silicon single crystal can be improved.
In general, the quartz glass crucible 1 for pulling up the silicon single crystal is, for example, as shown in FIG. 6 by using a centrifugal force so that the outer part is a
Here, the
On the other hand, the
These
In addition, in this invention, although quartz powder is used as a raw material of the
The manufacturing method of the quartz glass crucible for pulling a silicon single crystal according to the present invention has a
Here, a foamable synthetic quartz powder means quartz powder containing water, air, etc., for example. By containing these water, air, etc. in the step of raw material, after the said quartz glass crucible formation process, below the several
The amount of the silicon melt in the quartz glass crucible changes with the pulling up of the silicon single crystal. Therefore, the
Thus, the reason why the vibration of the water surface is likely to occur in the area where the water surface is located will be described below. FIG. 7 is a schematic cross-sectional view of an enlarged part of the hot water surface position of a quartz glass crucible having a silicon melt therein. As described above, the wet liquid of the crucible causes the silicon melt of the liquid to interface with a solid quartz glass crucible. The cross-sectional shape as shown to area | region I of 7 is shown. In this region I, since the distance from the liquid surface in which the oxygen concentration is lower in the silicon melt is closer than that in the range outside the region I, the concentration gradient of oxygen is increased, so that SiO 2 (solid) → Si (liquid) described above is increased. The diffusion of O generated by the reaction of + 2O is fast. Therefore, this reaction tends to proceed and the melting of the crucible is promoted. In general, in the zone (I), the crucible in that it occurs in the range of 0.1~5.0㎜ in the height direction, in the specified area (6) is divided into intervals of the crucible 0.1~5.0㎜ range (Fig. 8 in the direction of height h 3 It is preferable to provide at least 1 micro recessed
It is preferable that the average diameter of the
It is preferable that the average depth of the micro recessed
Moreover, it is preferable to make ratio with respect to the average depth of the average diameter of the micro recessed
It is preferable to make the average diameter of the bubble 7 into the range of 10-100 micrometers, and to make a density into the range of 30-300 piece / cc. If the average diameter of the bubble 7 is less than 10 μm, the effect of suppressing the surface vibration is not sufficiently obtained. If the average diameter of the bubble 7 exceeds 100 μm, the inside of the crucible is expanded by the expansion of the bubble 7. This is because the surface may be deformed and quartz fragments or the like may be mixed into the silicon melt. If the density is less than 30 / cc, the effect of suppressing the surface vibration is not sufficiently obtained. On the other hand, if the density of the foam 7 exceeds 300 / cc, the inner surface of the crucible is caused by expansion of the foam 7. This is because there is a risk of deforming and incorporating quartz fragments or the like into the silicon melt.
It is preferable that the area | region provided with the some bubble 7 in the synthetic
The minute
The above-mentioned part is shown as an example and the present invention is not limited to this embodiment.
(Example)
(Example 1)
As shown in FIG. 6, these powders were hardened into a crucible shape using centrifugal force so that the
(Example 2)
A quartz glass crucible for pulling a silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that a plurality of minute recesses were measured from the bottom of the inner surface of the circumferential wall and formed in a region of 0.3H to 0.4H. did.
(Example 3)
The quartz glass crucible for pulling the silicon single crystal according to the present invention by the same method as in Example 1, except that at least one of the annular inner surface portions partitioned at intervals of 6 mm in the crucible height direction does not have any one micro recess. Prepared.
(Example 4)
A quartz glass crucible for pulling a silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that the average diameter of the micro recesses was 550 µm.
(Example 5)
A quartz glass crucible for pulling a silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that the average depth of the micro recesses was 0.004 mm.
(Example 6)
A quartz glass crucible for pulling a silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that the average diameter of the bubbles was 120 µm.
(Example 7)
A quartz glass crucible for pulling a silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that the bubble had a density of 25 particles / cc.
(Example 8)
A quartz glass crucible for pulling the silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that the region having a plurality of bubbles was a region of 32 to 50% of the crucible thickness in the main wall portion.
(Example 9)
A quartz glass crucible for pulling a silicon single crystal according to the present invention was produced in the same manner as in Example 1 except that a diamond tool was used for the formation of the micro recesses.
(Comparative Example 1)
A quartz glass crucible for pulling up a silicon single crystal was produced in the same manner as in Example 1 except that the micro recesses were not provided.
(Comparative Example 2)
A quartz glass crucible for pulling up a silicon single crystal was produced in the same manner as in Example 1 except that no bubbles were provided in the inner layer portion located below the formed micro-concave portion.
(Comparative Example 3)
A quartz glass crucible for pulling up a silicon single crystal was produced in the same manner as in Example 1, except that the micro recesses and the bubbles of the inner layer portions were not provided.
(Evaluation 1)
Thus, the surface vibration was evaluated about the quartz glass crucible for silicon single crystal pulling. Sample pieces (30 mm x 30 mm) are cut out from the specific area | region of the crucible of these Examples 1-9 and Comparative Examples 1-3, these sample pieces are installed in a vacuum furnace, and high purity silicon | silicone is placed on these sample pieces. 10g was put up, the argon pressure was adjusted to 20 Torr, and the temperature was 1560 degreeC, and high purity silicon was melted. The surface tension is measured by a device equipped with a high-speed camera capable of capturing 500 or more sheets of silicon melted in a drop shape by a surface tension between a high-magnification lens and one second, thereby measuring the oscillation period of the silicon melt. Measured.
(Evaluation 2)
Further, using the crucibles of Examples 1 to 9 and Comparative Examples 1 to 3, a plurality of silicon single crystal ingots were produced by the CZ method, respectively, and the melt surface of the silicon melt at the time of producing the first and third silicon single crystal ingots. The state of vibration was observed. This observation is based on a high-speed camera that can shoot more than 500 sheets of quartz glass and the silicon melt wetted by the surface tension (the outermost surface of the silicon melt and the contact portion of the quartz glass) between the high magnification lens and one second. It observed by the equipped apparatus and measured the vibration period of a silicon melt. (Circle) and the thing of 1/6 second or more and less than 1 second (circle) and the thing of less than 1/6 second were evaluated as what made the vibration period into x.
In Table 1, as a result of the evaluation 1 and the
Vibration cycle
(second)
Bath surface vibration
Suppression (the first)
Bath surface vibration
Suppression (the third)
Possible number
(dog)
time
(h)
1/4 (~ 300h)
○ (-300 h)
1/15 (to 300 h)
× (-300 h)
In addition, the pulling time in a table | surface shows the elapsed time after a crucible reaches 1400 degreeC or more once.
In addition, the quartz glass crucible has a longest usable time of 300 hours. It is the inner surface of the crucible is covered with circular crystals (the inside is christobalite) made by the reaction of the silicon melt and the quartz glass, the outer characteristic is brown border, the inside is milky white, but the crystal When it exceeds this 300 hours, it peels and it mixes in a silicon melt and polycrystallizes a silicon single crystal, Therefore, use beyond that time is difficult. In Comparative Example 1, since there are no micro recesses on the inner surface, the surface vibration is large until bubbles are exposed on the surface. After the exposure (after about 180 hours), since the surface vibration is suppressed, the silicon single crystal can be pulled up, but the number that can be pulled up in the remaining 120 hours is limited.
In Comparative Example 2, the surface vibration is suppressed until the micro depressions disappear (about 180 hours), but since the surface vibration is not suppressed, the silicon single crystal can be pulled up within the remaining time.
In Comparative Example 3, since the vibrations of the surface and the water surface are generated at all times, the silicon single crystal cannot be pulled up.
As shown in Table 1, it was found that the quartz glass crucibles of Examples 1 to 9 according to the present invention were able to stably suppress the surface vibration of the silicon melt, and to have a long life as compared with Comparative Examples 1 to 3.
According to the present invention, a plurality of micro recesses are provided in a specific region of the inner wall of the circumferential wall portion, and a plurality of bubbles are provided in the synthetic quartz glass layer located below these micro recesses, whereby The surface vibration can be stably suppressed, and a long life silicon single crystal pulling quartz glass crucible can be provided.
1: quartz glass crucible
2: main wall
3: bend
4: bottom
5: micro recess
6: specific area
7: bubble
8: natural quartz glass (layer)
8a: natural quartz powder
9: synthetic quartz glass (layer)
9a: synthetic quartz powder
H: crucible height
100: quartz glass crucible
101: Silicone Melt
102: seed crystal
103: neck
104: shoulder
105: Straight East
106: tail
107 ingot of silicon single crystal
108: natural quartz glass
109: synthetic quartz glass
201: opening bubble
202: bubble
Claims (9)
In the specific region of the inner surface of the circumferential wall portion in the inner layer, a plurality of micro recesses are provided,
A quartz glass crucible for pulling a silicon single crystal, comprising a plurality of bubbles formed by using a foamable synthetic quartz powder in an inner layer portion located below the micro concave portion.
The said specific area | region is a quartz glass crucible for pulling a silicon single crystal in the area | region of 0.50H-0.99H measured from the said bottom part, when crucible height is set to H.
The said specific area | region is a quartz glass crucible for pulling a silicon single crystal with at least 1 said micro recessed part for every annular inner surface part partitioned at intervals of the range of 0.1-5.0 mm in the crucible height direction.
The average diameter of the said micro recess is a quartz glass crucible for pulling a silicon single crystal in the range of 1 to 500 µm.
The average depth of the said micro recess is a quartz glass crucible for pulling a silicon single crystal in the range of 0.05-50% of the crucible thickness in the said main wall part.
The quartz glass crucible for pulling a silicon single crystal in which the average diameter of the said bubble is the range of 10-100 micrometers, and the density is the range of 30-300 piece / cc.
The area | region provided with the some bubble in the said synthetic quartz glass layer is the quartz glass crucible for silicon single crystal pulling which is an area | region of 0.5-30% of the crucible thickness in the said main wall part.
Forming an outer layer made of natural quartz powder,
Forming an inner layer made of synthetic quartz powder on the inner surface of the outer layer;
An arc discharge is generated from the inner surface side of the inner layer and melted to form a quartz glass crucible having a circumferential wall portion, a curved portion and a bottom portion;
After the process of forming the said quartz glass crucible, the micro recessed part process process of providing a some micro recessed part is provided in the specific area | region of the inner surface of the said main wall part in the said inner layer,
The step of forming the inner layer includes a step of forming a plurality of bubbles in the inner layer portion located below the plurality of micro-concave portions by using a foamable synthetic quartz powder. Method of manufacturing crucibles.
The said micro recess is a manufacturing method of the quartz glass crucible for silicon single crystal pulling formed by physical grinding using a carbon dioxide laser or a diamond tool.
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000327478A (en) * | 1999-04-16 | 2000-11-28 | Shinetsu Quartz Prod Co Ltd | Quartz glass crucible and production of the crucible |
JP2005272178A (en) | 2004-03-23 | 2005-10-06 | Toshiba Ceramics Co Ltd | Silica glass crucible |
KR20090064303A (en) * | 2007-12-14 | 2009-06-18 | 쟈판 스파 쿼츠 가부시키가이샤 | High-purity vitreous silica crucible used for pulling large-diameter single-crystal silicon ingot which enables reduction of pinhole defect among large-diameter single-crystal silicon ingot |
KR20100112173A (en) * | 2008-02-29 | 2010-10-18 | 쟈판 스파 쿼츠 가부시키가이샤 | Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible |
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- 2011-01-28 KR KR1020110008613A patent/KR101293526B1/en active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000327478A (en) * | 1999-04-16 | 2000-11-28 | Shinetsu Quartz Prod Co Ltd | Quartz glass crucible and production of the crucible |
JP2005272178A (en) | 2004-03-23 | 2005-10-06 | Toshiba Ceramics Co Ltd | Silica glass crucible |
KR20090064303A (en) * | 2007-12-14 | 2009-06-18 | 쟈판 스파 쿼츠 가부시키가이샤 | High-purity vitreous silica crucible used for pulling large-diameter single-crystal silicon ingot which enables reduction of pinhole defect among large-diameter single-crystal silicon ingot |
KR20100112173A (en) * | 2008-02-29 | 2010-10-18 | 쟈판 스파 쿼츠 가부시키가이샤 | Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible |
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